CN1714467A - 应用于毫米频率的封装电子器件 - Google Patents
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Abstract
本发明涉及一种在大于45GHz的高频应用的毫米封装电子器件。根据本发明，为有助于设计包括在这些频率下工作的MMIC芯片的***，提出了使用包含一个或多个芯片(22)的封装，这些封装使得可以在这些频率下工作并包括两个类型的端口：通过经由波导提供与在高工作频率F的天线的连接的无接触电磁耦合进行转换的端口(30)；进行微带或同轴型转换的端口(40)，所述转换能实现在工作频率的分谐波频率F/N(优选N＝6或4，或者，如果需要的话，N＝3)的连接。
Description
背景技术
本发明涉及一种在非常高的频率、大于45GHz、所谓的“毫米频率”下工作的电子电路。
这些电子电路用于雷达型应用，其中在毫米频率下发送电磁波并且在天线上接收被障碍物反射的波，从而从这个波一方面提取这个障碍物和发送波的源之间的距离信息，另一方面提取它们之间的相对速度信息。
毫米频率电路也可以用于短距离和非常高的比特率通信应用。
无论在何种应用中，毫米频率信号的电子处理包括可由安装在印制电路上的硅集成电路执行的低频处理部件。这个部件可以通过常用的和便宜的技术来制造，并且一个和同一个集成电路芯片上的电路元件之间或者不同集成电路芯片之间进行简单的连接。该处理还包括非常高的高频部件(大于45GHz)，这只可以通过由硅以外的半导体材料(特别是，砷化镓GaAs和其衍生物，或者甚至是SiGe)制成器件和集成电路来实现。这些集成电路被称为“微波单片集成电路”或MMIC。这种高频部件引起的问题是制造困难和通常证实了是非常昂贵的。
实际上，对于相对复杂的功能，必须使用大量MMIC集成电路芯片，这是因为可以放在一个和相同芯片上的电路元件的数量对于MMIC电路来说比由硅制成的低频电路更加受到限制。而且，这些芯片利用互连安装在衬底上，在非常高的工作频率下难以制造所述互连。互连的设计是很难的，并且由于为保证毫米频率信号的传输而需要非常高的尺寸精度，因此制造成本高。随着***中MMIC数量的增加，这个问题变得更加严重。而且，将要产生的功能的复杂性的增加使芯片数量增加。
当芯片数量很多时，将芯片安装在混合衬底(通常这种安装采用布线将芯片连接到混合衬底上)上本身也是非常昂贵的。
发明内容
本发明的目的是降低在大于45GHz(和优选大于60GHz)的毫米频率下工作并包括MMIC芯片的电子***的成本。
为了实现这种成本的降低，本发明提出了使用一种新型器件来制造***。这种电子器件是安装在独立封装中并打算利用大量器件连接到例如印制电路板上的电子***的其它器件上的器件；这个器件包括至少一个在大于45GHz的主毫米频率F左右工作的集成电路芯片MMIC。封装具有用于在封装的内部和外部之间对电信号进行通信的至少两个端口，第一端口是的具有通过电磁耦合(即没有物理电接触)进行的转换(transition)以传输大于45GHz的主工作频率的端口，第二端口是具有微带或同轴型转换以传输作为主频率F的分谐波的工作频率F/N的端口。
分谐波频率优选是下列四个频率之一：F/6或F/4或F/3(或者，在极端情况下，可以是F/2)。
对于在77GHz的工作频率，因此分谐波频率是77GHz的1/6或1/4或1/3。
该封装优选设有位于距离第一端口为一定距离的位置上的导电罩(conductive cover)，从而在这个端口附近，产生在主工作频率下的电磁短路，这个端口短路形成波反射器，有助于通过第一端口进行这个频率的无接触传输。
第一端口上方的导电罩的高度优选等于主工作频率的波长的四分之一，从而提供这个短路和反射器作用。这个高度还可以是波长的四分之一的奇数倍。
位于该封装中的该MMIC或每个MMIC将优选包括乘以比率N以便从分谐波频率变为主工作频率的装置。在某种情况下，它也可以包括以比率N除以频率的装置。
因此该器件具有特殊的特征，它包括没有物理接触并专用于在主频率下的信号通路的端口，以及具有专用于在分谐波频率下的信号通路的接触的端口。
附图简述
通过阅读参考下面的附图进行的详细说明使本发明的其它特征和优点将更加显而易见，其中：
图1表示根据本发明的毫米封装器件；
图2表示根据本发明的涉及雷达天线的器件。
实施方式
可以使用根据本发明的器件的典型应用是雷达应用，其中，一方面，通过第一天线可以发送大于45GHz、本例中为77GHz的毫米频率，另一方面，可以通过几个不同天线接收被障碍物反射的电磁波。因此涉及多束雷达。几个接收天线的存在可以在较宽的角度范围内观察障碍物的存在并且还能更加准确地定位被检测到的障碍物。
根据本发明，建议将MMIC芯片单独地放置在密封的封装中，即所谓的毫米封装，能够在大于45GHz的频率下工作，并具有允许通过在工作频率下的无接触电磁耦合进行连接的外部端口，在这种频率为77GHz的情况下，具有发送或接收天线或具有引导到这些天线的波导。
通过在这些非常高频率下的电磁耦合进行的传输是通过使用在封装内部、重要的是在内部和外部之间的电磁信号的自由传播性能来提供的。这个封装特别包括导电罩(金属或金属化罩)，其封闭来自芯片或到达芯片的信号传播线。该导电罩位于无接触外部端口之上，并与其相隔一定距离，从而它形成(在为其设计该器件的主工作频率下，)电磁短路，有助于经过这个端口以自由传播方式进行信号传输。
在大于45GHz的工作频率F下的这些端口是通过空气中(或在气体中或在真空中)的电磁耦合进行的转换，特别是能够朝波导进行辐射的导电元件，其中所述波导与这些元件放在一条直线上，或者能够在波导的输出上接收电磁辐射的导电元件，其中导电元件放在波导的前面。封闭MMIC芯片的该封装包括与这些导电元件成一条直线的非导电部件，以便允许电磁能量在波导和导电元件之间通过。
除了能在大于45GHz的频率下进行有效耦合的一个或多个外部无接触端口之外，该封装优选还具有不能在大于45GHz的频率下有效地工作但是被设计成可以在该工作频率的分谐波频率下工作的端口。而且，包含在这些器件中的芯片优选包括必须的频率乘法装置，从而从分谐波频率改变为主频率。
不能在77GHz工作但是能在10GHz以上、甚至高达25GHz或稍微更高一些的频率下工作的端口是使用微带线或同轴线制造的。该器件与位于同一衬底上的其它器件的连接将是很容易的，这是因为承载的频率远低于毫米工作频率。
图1是表示根据本发明的器件的剖面图。这个例子只示出了该器件的封装中的一个MMIC芯片，但是可以是两个，或者甚至在异常情况下，可以是三个。
该封装是导电的，例如金属或部分金属化的；它优选包括：用做衬底的金属基底，其上直接安装MMIC芯片22的背面；在封装内部并朝向封装的外部提供互连的双面陶瓷衬底24；以及覆盖基底的金属或金属化罩25，从而在基底和罩之间密封一个或多个芯片和陶瓷衬底。由于MMIC芯片22直接焊接到基底上，因此陶瓷衬底24包括其中***芯片的开口。陶瓷衬底24优选是在两面被金属化的衬底：在正面上的金属化26从而形成传输线，和在背面上的金属化28，从而形成接地平面。各种介质和导电部分的尺寸使得该器件正确地在所述工作频率(77GHz)下工作。使用金属化26和28，一方面，用于在芯片之间建立互连，另一方面，用于产生封装的外部端口、都能在77GHz下工作的两个端口以及设计成传输作为77GHz的分谐波的频率的端口。
在图1的例子中，能传输77GHz频率的端口30包括通过无接触电磁耦合进行的转换，所述无接触电磁耦合使得77GHz的频率下的信号在没有接触的情况下，从波导传到芯片或从芯片传到波导。
这个通过电磁耦合进行的转换优选经过封装中的、更具体地说是金属基底20中的开口32。这个开口32与图1中未示出的波导连通。这个开口物理地但不是电磁地被陶瓷衬底24封闭。它与设置在陶瓷衬底的背面的金属化28中的去金属化区34成一条直线。在前部金属化26上，形成从MMIC芯片22到端口30的微带线，微带线的端部36精确地与基底20的开口32的中心对正而地终止。这个端部36与由形成接地平面的金属化28包围的去金属化区34一起形成辐射元件，因此形成例如与放在开口32前面的波导通信的天线，通过电磁装置将波导与微带线直接耦合。在微带线的端部36上方，罩的导电表面位于与由这条线传输的信号的主工作频率的波长适合的距离上，这个距离使得罩形成电磁短路，因此形成由微带线的端部36辐射的天线的反射器。例如，陶瓷衬底24的金属化上方的罩的高度H等于对应与这个频率的波长的四分之一或非常接近于这个值。其还可以是该波长的四分之一的奇数倍。
在微带线的另一端，布线链接38设置在芯片和微带线之间。最终的耦合在77GHz工作，只要正确选择金属化和非金属化区的尺寸、陶瓷衬底的厚度以及陶瓷衬底中的开口的宽度使其与对应于77GHz主频率的波长适合即可。
在想象的主要应用中，波导连接到接收(或发送)反射的雷达波的天线，并且微带线的端部36用做用于接收进入封装的电磁波的元件。
图1所示的另一端口是通过微带线的直接端口40，不允许在77GHz通信而允许在分谐波频率下通信，所述分谐波频率优选是F/6，但也可以是F/4或F/3，或者在某些情况下甚至为F/2。对应于这个端口的微带线形成在金属化的陶瓷衬底24的顶部金属化26中。底部金属化28用做接地平面。该线从封装的内部经过导电罩25的局部中断或者经过罩中的凹口到达封装的外部，其中所述导电罩25的局部中断是通过使微带线与罩绝缘，例如通过置于微带线和罩边缘之间的绝缘垫圈42来实现的。
在这个分谐波频率端口40的一侧上，MMIC芯片也通过布线链接44连接到微带线。
该器件可以通过端口40外部地与安装在同一混合衬底上的其它类似器件连接或与安装在相同混合衬底上或安装在常规印制电路上的不同器件连接。这种连接可以从在封装外部延伸的顶部金属化表面26直接进行；例如，可以将导线焊接到这个顶表面上；或者甚至可以经过焊接到金属化26的这个外部部分上然后形成该器件的内部部分的引线46来进行。
因此，应该理解的是在使用这个器件的电子***中，公共衬底将具有安装其上的不是独立芯片而是上述类型的器件，因此大大简化了该***的设计和制造。
图2表示在雷达电子***中使用图1的器件。其中可以看到图1的器件的组件(基底20、芯片22、罩25)。直接安装后者使其与作为波导板的金属板50接触：在这个板中，形成波导52，其输出端恰好与基底20的开口32对正，因此与导电端部36对正，所述导电端部在波导和封装之间提供电磁耦合。
波导的另一端，在本应用中为输入端，与抛物面雷达接收天线62的发送中心对正，其中所述天线62被加工在相对于波导板50设置的金属板60中。波导板50可以包括大量波导，例如引导到被加工在相同天线板60中的第二天线64的第二波导54；这个波导将从第二天线接收来的电磁波引导到类似于图1的器件的第二毫米封装器件(未示出)，该第二毫米封装器件与图1的器件一样安装在形成根据本发明的大量器件共用的衬底的板50上。
在图1和2的实施例中，假设陶瓷衬底24固定在金属基底上。可以想象没有金属基底，该封装由在两面被金属化的陶瓷衬底和金属罩形成。在这种情况下，利用完全相同的方式制造通过电磁耦合进行转换的端口30；设置在背面金属化28中的去金属化区34代替了开口32，由于不存在基底，因此所述开口32也不存在。波导完全与这个去金属化区成一条直线。在不同实施例中，可以提供微带线，其自由端用做无接触电磁转换，由MMIC芯片(与芯片22相同或除了芯片22以外)承载，代替由陶瓷衬底承载，如图1和2中的情况。在这种情况下，如此用做电磁转换的MMIC芯片被固定在该封装的金属基底上，芯片的一部分与设置在基底中的开口成一条直线地延伸，该开口本身与波导成一条直线。由MMIC芯片承载的微带线的自由端则与基底中的开口对正，从而通过这个开口形成无接触电磁转换。
上面的说明提出了通过电磁耦合进行的转换，其使用了封装的罩用做反射器来产生转换。然而，还可以想象通过耦合进行的其它类型的转换，例如非反射器转换，使用封装的不同元件的几何形状以有助于电磁耦合。例如，使用衬底24(或芯片22的)的顶面上的微带线和底面上的槽线(槽形式的去金属化区34)之间的电磁耦合的转换。则不需要反射器，并且本实施例特别适合于其中封装的罩是塑料材料的情况。
根据本发明的器件可以用来在便宜的印制电路衬底(树脂基衬底)上结合低频器件(集成电路芯片或在低频工作的其它器件)和在高达大约25GHz工作的器件来制造完全的电子***。这些器件通过微带连接而连接到根据本发明的毫米封装器件，并且毫米封装器件通过利用无接触电磁耦合的转换和通过波导连接到天线。
Claims (8)
1、一种电子器件，其安装在独立封装中并打算连接到电子***的其它器件上，这个器件的特征在于它包括至少一个在大于45GHz的主毫米频率F附近工作的集成电路芯片(22)，并且该封装具有用于在该封装的内部和外部之间对电信号进行通信的至少两个端口(30和40)，第一端口(30)是具有通过无接触电磁耦合进行的转换，以传输大于45GHz的所述主工作频率下的信号的端口，第二端口(40)是具有微带或同轴型转换，以传输作为所述主频率F的分谐波的工作频率F/N的端口。
2、根据权利要求1所述的器件，其特征在于该封装设有位于距离第一端口为一定距离的位置上的导电罩(25)，从而在这个端口上方，产生在所述主工作频率下的电磁短路，由此形成波反射器，有助于通过所述第一端口进行这个频率的传输。
3、根据权利要求2所述的器件，其特征在于导电罩在端口上方的高度等于所述工作频率的波长的四分之一，或者所述工作频率的波长的四分之一的奇数倍。
4、根据权利要求1至3中任一项所述的器件，其特征在于包含在封装中的芯片之一包括使频率乘以比率N的装置，从而将频率从所述分谐波频率变为所述主工作频率。
5、根据权利要求1至4中任一项所述的器件，其特征在于它包括陶瓷衬底(24)，其第一金属化面被刻蚀从而形成具有自由端(36)的微带线(26)，其另一面也被金属化从而形成接地平面，所述接地平面面向所述自由端被中断，从而在该封装的外部和内部之间经由线端部提供无接触电磁耦合。
6、根据权利要求5所述的器件，其特征在于导电罩在所述微带线的自由端上方的高度等于所述工作频率的波长的四分之一，或所述工作频率的波长的四分之一的奇数倍。
7、根据权利要求5或6所述的器件，其特征在于它包括面向微带线端部(36)开口的金属基底(20)。
8、根据权利要求1至4中任一项所述的器件，其特征在于它包括固定在基底上的一个或多个MMIC芯片，所述芯片之一包括微带线，其一个自由端用做无接触电磁转换，这个芯片在基底中的开口上方延伸，从而所述微带线的自由端设置成与该开口对正，以便通过这个开口形成无接触电磁转换。
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| FR0214684 | 2002-11-22 |
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2002
- 2002-11-22 FR FR0214684A patent/FR2847723B1/fr not_active Expired - Lifetime
-
2003
- 2003-11-18 EP EP03799522A patent/EP1563567A1/fr not_active Withdrawn
- 2003-11-18 US US10/534,251 patent/US7388450B2/en not_active Expired - Lifetime
- 2003-11-18 WO PCT/EP2003/050846 patent/WO2004049496A1/fr active Application Filing
- 2003-11-18 CN CNB2003801038504A patent/CN100517861C/zh not_active Expired - Lifetime
- 2003-11-18 JP JP2004554538A patent/JP2006507740A/ja active Pending
- 2003-11-18 KR KR1020057009111A patent/KR20050059339A/ko not_active Application Discontinuation
- 2003-11-18 AU AU2003300245A patent/AU2003300245A1/en not_active Abandoned
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2006
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103151340A (zh) * | 2013-02-08 | 2013-06-12 | 日月光半导体制造股份有限公司 | 天线封装模块及其制造方法 |
| CN103151340B (zh) * | 2013-02-08 | 2016-04-20 | 日月光半导体制造股份有限公司 | 天线封装模块及其制造方法 |
| CN104835807A (zh) * | 2014-02-07 | 2015-08-12 | 株式会社东芝 | 毫米波段用半导体封装件以及毫米波段用半导体装置 |
| CN105374802A (zh) * | 2014-08-07 | 2016-03-02 | 英飞凌科技股份有限公司 | 微波芯片封装器件 |
| CN105374802B (zh) * | 2014-08-07 | 2018-08-03 | 英飞凌科技股份有限公司 | 微波芯片封装器件 |
| CN114497948A (zh) * | 2022-01-26 | 2022-05-13 | 中国电子科技集团公司第十三研究所 | 一种毫米波转换结构 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20050059339A (ko) | 2005-06-17 |
| EP1563567A1 (fr) | 2005-08-17 |
| HK1086950A1 (en) | 2006-09-29 |
| FR2847723A1 (fr) | 2004-05-28 |
| CN100517861C (zh) | 2009-07-22 |
| AU2003300245A1 (en) | 2004-06-18 |
| JP2006507740A (ja) | 2006-03-02 |
| FR2847723B1 (fr) | 2006-02-03 |
| WO2004049496A1 (fr) | 2004-06-10 |
| US7388450B2 (en) | 2008-06-17 |
| US20060097818A1 (en) | 2006-05-11 |
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