CN1677618A - 半导体薄膜制造方法及装置、光束成形掩模及薄膜晶体管 - Google Patents
半导体薄膜制造方法及装置、光束成形掩模及薄膜晶体管 Download PDFInfo
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- CN1677618A CN1677618A CNA200510056200XA CN200510056200A CN1677618A CN 1677618 A CN1677618 A CN 1677618A CN A200510056200X A CNA200510056200X A CN A200510056200XA CN 200510056200 A CN200510056200 A CN 200510056200A CN 1677618 A CN1677618 A CN 1677618A
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- 239000010409 thin film Substances 0.000 title claims abstract description 110
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 41
- 239000004065 semiconductor Substances 0.000 title claims abstract description 12
- 238000007493 shaping process Methods 0.000 title claims description 26
- 239000013078 crystal Substances 0.000 claims abstract description 257
- 230000005855 radiation Effects 0.000 claims description 109
- 239000010408 film Substances 0.000 claims description 89
- 239000000758 substrate Substances 0.000 claims description 85
- 230000005540 biological transmission Effects 0.000 claims description 41
- 239000002800 charge carrier Substances 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 20
- 239000002243 precursor Substances 0.000 claims description 14
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 20
- 238000009751 slip forming Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 61
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 14
- 229920005591 polysilicon Polymers 0.000 description 13
- 238000005224 laser annealing Methods 0.000 description 12
- 239000011521 glass Substances 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 9
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- 238000001878 scanning electron micrograph Methods 0.000 description 6
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- 238000005530 etching Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 235000005121 Sorbus torminalis Nutrition 0.000 description 4
- 244000152100 Sorbus torminalis Species 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
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- 238000004904 shortening Methods 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910017502 Nd:YVO4 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910002090 carbon oxide Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 210000004276 hyalin Anatomy 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
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- 239000010453 quartz Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- WZFUQSJFWNHZHM-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)CC(=O)N1CC2=C(CC1)NN=N2 WZFUQSJFWNHZHM-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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- 238000003825 pressing Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 229910001256 stainless steel alloy Inorganic materials 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
- H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/903—Dendrite or web or cage technique
- Y10S117/904—Laser beam
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Recrystallisation Techniques (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (35)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004104250 | 2004-03-31 | ||
JP2004104250 | 2004-03-31 | ||
JP2005027938 | 2005-02-03 | ||
JP2005027938 | 2005-02-03 |
Related Child Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN 200810175139 Division CN101419913B (zh) | 2004-03-31 | 2005-03-31 | 半导体薄膜制造方法 |
CN 200710142475 Division CN101123183B (zh) | 2004-03-31 | 2005-03-31 | 光束成形掩模 |
CN 200710142476 Division CN101123184A (zh) | 2004-03-31 | 2005-03-31 | 半导体薄膜制造方法及装置、光束成形掩模及薄膜晶体管 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1677618A true CN1677618A (zh) | 2005-10-05 |
CN100485868C CN100485868C (zh) | 2009-05-06 |
Family
ID=35050038
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB200510056200XA Active CN100485868C (zh) | 2004-03-31 | 2005-03-31 | 半导体薄膜制造方法及装置、光束成形掩模及薄膜晶体管 |
Country Status (2)
Country | Link |
---|---|
US (2) | US7611577B2 (zh) |
CN (1) | CN100485868C (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102714149A (zh) * | 2009-11-05 | 2012-10-03 | 株式会社V技术 | 用于形成低温多晶硅膜的装置和方法 |
CN103262213A (zh) * | 2010-12-09 | 2013-08-21 | 株式会社V技术 | 激光退火装置及激光退火方法 |
CN105097453A (zh) * | 2015-08-14 | 2015-11-25 | 京东方科技集团股份有限公司 | 低温多晶硅薄膜、薄膜晶体管及各自制备方法、显示装置 |
Families Citing this family (12)
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US20050237895A1 (en) * | 2004-04-23 | 2005-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus and method for manufacturing semiconductor device |
TWI299431B (en) * | 2005-08-23 | 2008-08-01 | Au Optronics Corp | A mask for sequential lateral solidification (sls) process and a method thereof |
EP1974077A2 (en) * | 2006-01-20 | 2008-10-01 | BP Corporation North America Inc. | Methods and apparatuses for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics |
JP2008244374A (ja) * | 2007-03-29 | 2008-10-09 | Nec Lcd Technologies Ltd | 半導体薄膜の製造方法、半導体薄膜及び薄膜トランジスタ |
US8440157B2 (en) * | 2007-07-20 | 2013-05-14 | Amg Idealcast Solar Corporation | Methods and apparatuses for manufacturing cast silicon from seed crystals |
CN101796226A (zh) * | 2007-07-20 | 2010-08-04 | Bp北美公司 | 由籽晶制造铸造硅的方法 |
WO2009015168A1 (en) | 2007-07-25 | 2009-01-29 | Bp Corporation North America Inc. | Methods for manufacturing geometric multi-crystalline cast materials |
US8709154B2 (en) | 2007-07-25 | 2014-04-29 | Amg Idealcast Solar Corporation | Methods for manufacturing monocrystalline or near-monocrystalline cast materials |
TW201012978A (en) * | 2008-08-27 | 2010-04-01 | Bp Corp North America Inc | Apparatus and method of use for a casting system with independent melting and solidification |
KR101073551B1 (ko) * | 2009-11-16 | 2011-10-17 | 삼성모바일디스플레이주식회사 | 레이저 마스크 및 이를 이용한 순차적 측면 고상 결정화 방법 |
JP6536634B2 (ja) * | 2017-07-28 | 2019-07-03 | セイコーエプソン株式会社 | 電気光学装置および電子機器 |
CN113310968B (zh) * | 2021-04-22 | 2022-07-08 | 清华大学 | 一种基于光束整形改善激光诱导击穿光谱可重复性的方法 |
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-
2005
- 2005-03-31 CN CNB200510056200XA patent/CN100485868C/zh active Active
- 2005-03-31 US US11/094,570 patent/US7611577B2/en active Active
-
2009
- 2009-09-17 US US12/561,749 patent/US20100019175A1/en not_active Abandoned
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102714149A (zh) * | 2009-11-05 | 2012-10-03 | 株式会社V技术 | 用于形成低温多晶硅膜的装置和方法 |
CN102714149B (zh) * | 2009-11-05 | 2015-07-29 | 株式会社V技术 | 用于形成低温多晶硅膜的装置和方法 |
TWI512833B (zh) * | 2009-11-05 | 2015-12-11 | V Technology Co Ltd | 低溫多晶矽膜之形成裝置及方法 |
CN103262213A (zh) * | 2010-12-09 | 2013-08-21 | 株式会社V技术 | 激光退火装置及激光退火方法 |
CN103262213B (zh) * | 2010-12-09 | 2015-12-02 | 株式会社V技术 | 激光退火装置及激光退火方法 |
TWI555600B (zh) * | 2010-12-09 | 2016-11-01 | V科技股份有限公司 | 雷射退火裝置及雷射退火方法 |
CN105097453A (zh) * | 2015-08-14 | 2015-11-25 | 京东方科技集团股份有限公司 | 低温多晶硅薄膜、薄膜晶体管及各自制备方法、显示装置 |
CN105097453B (zh) * | 2015-08-14 | 2018-10-19 | 京东方科技集团股份有限公司 | 低温多晶硅薄膜、薄膜晶体管及各自制备方法、显示装置 |
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US20050221569A1 (en) | 2005-10-06 |
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