CN1674265A - 树脂密封型半导体装置及其制造方法 - Google Patents
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Abstract
一种树脂密封型半导体装置及其制造方法,半导体片(30)及片状部件(40)设置在绝缘基础部件(20)上,且被利用注入模制法成形的模制树脂密封。片状部件(40)包围半导体片(30)的四边配置。包围半导体片(30)的片状部件(40)的纵向朝向一定的方向。在进行树脂注入时,使片状部件(40)的纵向实质上垂直于注入树脂的流向地将绝缘基础部件(20)置于模型成型器内。
Description
技术领域
本发明涉及半导体装置,更具体地说,本发明涉及利用树脂密封半导体片和片状部件的树脂密封型半导体装置及其制造方法。
背景技术
目前可知有半导体片和电阻等片状部件利用模制树脂密封的半导体装置。注入模制树脂的方法可知有传递膜模制法(例如参照专利文献1及专利文献2)。
在利用模制树脂法进行的树脂密封过程中,在密封部分施加高的压力。特别是在谋求装置的超薄型化时,由于垂直于注入树脂流动方向的断积减少,会在密封部分施加更高的压力。由于注入的模制树脂的压力,而使连接半导体片的电极和导线电极等的接合引线在模制树脂的流动方向受力。由此,引起引线被剥离或相邻的引线相互接触,可能产生次品,而构成了半导体装置的制造成品率低下的主要原因。
专利文献1:特开平9-17912号公报
专利文献2:特开平11-251344号公报
发明内容
本发明是鉴于所述问题点而开发的,其目的在于,提供一种树脂密封型半导体装置及树脂密封型半导体装置的制造方法,其可抑制接合引线断线或接合引线相互接触等造成的接触不良。
本发明的树脂密封型半导体装置包括:绝缘基础部件,其设有导体电路,半导体片,其设于所述绝缘基础部件上,且与所述导体电路引线接合;多个片状部件,其安装在所述绝缘基础部件上;密封树脂,其密封所述半导体片和所述多个片状部件,在注入所述树脂时,至少在一个方向遮蔽相对所述半导体片的所述树脂的流动的位置配置有所述多个片状部件。
根据所述结构,由于利用片状部件遮蔽树脂注入时流向半导体片的注入树脂的流动,故可缓和施加在半导体片周边的注入树脂的压力,抑制引线接合的连接不良。
本发明的树脂密封型半导体装置的另一形态包括:绝缘基础部件,其设置有导体电路;半导体片,其设于所述绝缘基础部件上,且与所述导体电路引线接合;多个片状部件,其安装在所述绝缘基础部件上;密封树脂,其密封所述半导体片和所述多个片状部件,所述多个片状部件包围半导体片的四边,所述多个片状部件的纵向朝向一定的方向。
根据所述结构,通过使注入树脂的流向与各片状部件的纵向垂直,可缓和施加在半导体片周边的注入树脂的压力,抑制引线流动,降低引线接合的连接不良。由纵向和半导体片的边同向设置的片状部件构成的片状部件列和半导体片的距离越接近,越可以有效地缓和施加在半导体片周边的注入树脂的压力。
本发明的树脂密封型半导体装置的再一形态包括:绝缘基础部件,其设有导体电路;半导体片,其设于所述绝缘基础部件上,且与所述导体电路引线接合;多个片状部件,其安装在所述绝缘基础部件上;密封树脂,其密封所述半导体片和所述多个片状部件,所述多个片状部件包围半导体片的四边,对应所述各半导体片的各边设置的片状部件列中包括的片状部件的纵向朝向沿所述半导体片各边的方向。
根据所述结构,即使注入树脂的流向朝向半导体片的任一边方向,也可以缓和施加在半导体片周边的注入树脂的压力,抑制引线流动,可降低引线接合的连接不良。多个片状部件和半导体片的距离越接近,越可以有效地缓和施加在半导体片周边的注入树脂的压力。
本发明的树脂密封型半导体装置的又一形态包括:绝缘基础部件,其设有导体电路;半导体片,其设于所述绝缘基础部件上,且与所述导体电路引线接合;多个片状部件,其安装在所述绝缘基础部件上;密封树脂,其密封所述半导体片和所述多个片状部件,所述多个片状部件沿所述绝缘基础部件的周边设置,所述多个片状部件的纵向朝向一定的方向。
根据所述结构,通过使注入树脂的流向与各片状部件的纵向垂直,可缓和施加在半导体片周边的注入树脂的压力,抑制引线流动,可降低引线接合的接触不良。
本发明的树脂密封型半导体装置的另外的形态包括:绝缘基础部件,其设有导体电路;半导体片,其设于所述绝缘基础部件上,且与所述导体电路引线接合;多个片状部件,其安装在所述绝缘基础部件上;密封树脂,其密封所述半导体片和所述多个片状部件,所述多个片状部件沿所述绝缘基础部件的周边部设置,对应所述绝缘基础部件的各边设置的片状部件列中包括的片状部件的纵向朝向沿所述绝缘基础部件的各边的方向。
根据所述结构,即使注入树脂的流向朝向绝缘基础部件的任一边的方向,也可以缓和施加在半导体片周边的注入树脂的压力,抑制引线流动,可降低引线接合的接触不良。
本发明的树脂密封型半导体装置的另外的形态包括:绝缘基础部件,其设有导体电路;半导体片,其设于所述绝缘基础部件上,且与所述导体电路引线接合;多个片状部件,其安装在所述绝缘基础部件上;密封树脂,其密封所述半导体片和所述多个片状部件,由所述多个片状部件构成的两列以上的片状部件列配置在所述半导体片的某一边附近,所述多个片状部件的纵向朝向所述半导体片的某一边的方向,各片状部件列中包括的各片状部件的片状部件列方向的位置与邻接的的片状部件列中包括的各片状部件错开而相互不同。
根据所述结构,通过使注入树脂的流向与各片状部件列的片状部件的纵向垂直,可更有效地缓和注入树脂的压力,更有效地抑制引线流动。
本发明的树脂密封型半导体装置的另外的形态包括:绝缘基础部件,其设有导体电路;半导体片,其设于所述绝缘基础部件上,且与所述导体电路引线接合;多个片状部件,其安装在所述绝缘基础部件上;密封树脂,其密封所述半导体片和所述多个片状部件,由所述多个片状部件构成的片状部件列配置在所述半导体片的某一边附近,所述多个片状部件的纵向朝向所述半导体片的某一边的方向,在所述片状部件列上设置仿真片状部件。
根据所述结构,在树脂密封型半导体装置的结构上,即使不能在所希望的位置设置片状部件,也可以通过在不能设置片状部件的位置使用仿真片状部件,可靠地遮蔽朝向半导体片侧的注入树脂的流动的前进方向。
本发明的半导体装置制造方法,是利用树脂密封设置在设有导体电路的绝缘基础部件上、且与所述导体电路引线接合的半导体片和表面安装型的多个片状部件的半导体装置制造方法,包括:沿所述半导体片的至少一个边配置所述多个片状部件,使片状部件的纵向朝向所述一边的方向的工序;将所述绝缘基础部件载置在模型成型器的模腔内,使所述多个片状部件的纵向实质上与所述树脂的注入方向垂直的工序;对所述半导体片和所述片状部件注入所述树脂的工序。
根据所述半导体装置的制造方法,由于利用多个片状部件遮蔽注入树脂的流动,故可抑制连接于半导体片上的引线接合的引线流动,因此,可抑制树脂密封时引线接合的接触不良。
另外,将所述的各要素适当组合的内容也包含于本专利申请要求专利保护的发明范围内。
附图说明
图1是实施例1的半导体装置的平面图;
图2是图1的A-A线的剖面图;
图3是实施例2的半导体装置的平面图;
图4是实施例3的半导体装置的平面图;
图5是实施例4的半导体装置的平面图;
图6是实施例5的半导体装置的平面图;
图7是实施例5的半导体装置的树脂密封时的树脂流的图示;
图8是实施例6的半导体装置的平面图;
图9A、图9B、图9C是说明半导体装置的密封方法的步骤的图示;
图10是在模型成型器的模腔内设置了安装有实施例1的半导体片及片状部件的绝缘基础部件时的平面图。
具体实施方式
实施例1
图1是实施例1的半导体装置10的平面图,图2是图1的A-A线的剖面图。半导体装置10具有绝缘基础部件20、半导体片30、多个片状部件40、模制树脂50。半导体片30及多个片状部件40设于绝缘基础部件20上,通过利用传递膜模制法成型的模制树脂50密封。另外,图1的平面图中省略了模制树脂50。
构成绝缘基础部件20的材料例如有BT树脂等密胺电介质、液晶聚合物、环氧树脂、PPE树脂、聚酰亚胺树脂、氟树脂、苯酚树脂、聚酰胺双马来酰亚胺等热硬性树脂。绝缘基础部件20既可以是单层也可以是多层。
半导体片30的电极焊盘32通过引线接合与形成绝缘基础部件20上的导体电路(未图示)的导线电极22电连接,金属接合引线34连接电极焊盘32和绝缘基础部件20侧的导线电极22。
片状部件40包围半导体片30的四边而配置,与在绝缘基础部件20上设置的导体电路连接。片状部件40具体地说是电容器、电感器、电阻器等。片状部件40的尺寸被标准化为一定的形状,最好使用所谓“1005尺寸”、“0603尺寸”及“0402尺寸”。在此,“1005尺寸是指片状部件40的尺寸为1.0mm×0.5mm×0.5mm,“0603尺寸”是指片状部件40的尺寸为0.6mm×0.3mm×0.3mm,“0402尺寸”是指片状部件40的尺寸为0.4mm×0.2mm×0.2mm。这样,片状部件40的与纵向垂直的方向的投影面积比与宽度方向垂直的方向的投影面积大。模制树脂50的厚度至少比片状部件40的高度厚
构成模制树脂50的材料可列举环氧树脂等热硬性树脂。模制树脂50可以含有玻璃等填充物。
在实施例1中,包围各半导体片30的多个片状部件40的纵向朝向一定的方向。在通过传递膜模制法注入模制树脂50时,配置模制前的半导体装置10,使片状部件40的纵向垂直于模制树脂50的流动。这样,朝向半导体片30的模制树脂50的流动被片状部件40有效地遮蔽,故与半导体片30连接的金属接合引线34从注入的模制树脂50受到的压力降低。因此,在注入模制树脂50时,因引线流动导致金属接合引线34从电极焊盘32或导线电极22错开,或邻接的金属接合引线34相互接触的现象被抑制,半导体装置10的金属接合引线34的连接不良被降低。金属接合引线34的连接不良的降低可使半导体装置10的制造成品率提高。
下面说明的实施例2以后的半导体装置10的基本结构除片状部件40的配置不同之外,与实施例1相同,因此,和实施例1相同的结构,适当的省略说明,说明本实施例中的特征性结构。
实施例2
图3是实施例2的半导体装置10的平面图。在图3中也省略了模制树脂50。在实施例2的半导体装置10中,对应各半导体片30的各边设置的多个片状部件40的纵向朝向沿半导体片30各边的方向。因此,在利用传递膜模制法注入模制树脂50时,即使相对于模制树脂50的流动朝向模制前的半导体装置10的任一边配置,也可以利用片状部件40有效地遮蔽流入半导体片30的模制树脂50的流动,因此,可抑制半导体装置10的金属接合引线30的引线流动,可降低金属接合引线34的连接不良。
实施例3
图4是实施例3的半导体装置10的平面图。在图4中也省略了模制树脂50。在实施例3的半导体装置10中,多个片状部件40沿绝缘基础部件20的周边部配置。各片状部件40的纵向朝向一定的方向。即使通过这样的结构,在利用传递膜模制法注入模制树脂50时,也可以配置模制前的半导体装置10,以使朝向一定方向的片状部件40的纵向垂直于模制树脂50的流动,这样,利用片状部件40有效地遮蔽朝模制树脂50向半导体片30的流动,因此,可抑制半导体装置10的金属接合引线30的引线流动,可降低金属接合引线34的连接不良。
实施例4
图5是实施例4的半导体装置10的平面图。在图5中也省略了模制树脂50。在实施例4的半导体装置10中,与实施例3相同,多个片状部件40沿绝缘基础部件20的周边部配置,但各片状部件40的纵向朝向沿半导体片30的各边的方向。因此,在利用传递膜模制法注入模制树脂50时,即使相对于模制树脂50的流动朝向模制前的半导体装置10的任一边配置,也可以利用片状部件40遮蔽流入半导体片30的模制树脂50的流动,可抑制引线流动。
实施例5
图6是实施例5的半导体装置10的平面图。在图6中也省略了模制树脂50。在实施例5的半导体装置10中,多个片状部件40在半导体片30的一侧的边附近配置,形成与该边并行的片状部件列42及片状部件列44。配置于片状部件列42及片状部件列44的片状部件40纵向朝向与各列方向相同的方向。另外,片状部件列42的片状部件40相对于片状部件44的片状部件40,从与列方向垂直的方向看,相互错开配置。即,片状部件列42的片状部件40间的间隙的位置相对于片状部件44的片状部件40间的间隙的位置在列方向一一错开片状部件40的纵向的长度的一半。通过这样的结构,在利用传递膜模制法注入模制树脂50时,相对于模制树脂50的流动片状部件列42及片状部件列44的列方向垂直地配置模制前的半导体装置10,这样,可利用片状部件40有效地遮蔽朝向半导体片30的模制树脂50的流动,即,如图7所示,朝向半导体片30的模制树脂50的流动首先通过片状部件列42遮蔽前进的方向,将压力减弱。然后,模制树脂50的流动通过片状部件列42的片状部件40间的间隙,利用片状部件列44再次遮蔽前进的方向,将压力减弱。
另外,在实施例5中,将片状部件列配置3列以上,通过将各片状部件列的片状部件40相对于邻接的片状部件列的片状部件40,从和列方向垂直的方向看,相互错开配置,可进一步有效地遮蔽朝向半导体片30的模制树脂50的流动。
实施例6
图8是实施例6的半导体装置10的平面图。在图8中也省略了模制树脂50。在实施例6的半导体装置10中,在半导体片30一侧的边的附近与该边并行配置多个片状部件40及至少一个仿真片状部件46。在此,仿真片状部件46是在半导体装置10动作时不需要的部件。仿真片状部件46可使用不与绝缘基础部件20上的配线连接的片状部件40或与片状部件40相同类型的假部件等。片状部件40及仿真片状部件46的纵向朝向与列方向相同的方向。通过该结构,即使在半导体装置10的电路结构上或在半导体装置10的动作上,不能将片状部件40配置在所希望的位置的情况或不必在所希望的位置配置片状部件40的情况下,也可以通过在所希望的位置使用仿真片状部件46可靠地遮蔽朝向半导体片30的模制树脂50的流动的前进方向。
半导体装置的制造方法
准备绝缘基础部件,在绝缘基础部件上设置导体电路。从晶片上切下半导体片,将切下的半导体片安装在绝缘基础部件上,通过引线接合将半导体片的电极焊盘和设于导体电路上的导线电极连接。在安装于绝缘基础部件上的半导体片的周边设置上述实施例1~6所示的任一配置的多个片状部件或仿真片状部件。
其次,利用树脂密封半导体片及多个片状部件。图9表示半导体装置10的密封方法的步骤。
(1)将固状的模制树脂片106置于模型成型器100的筒104内。将安装了半导体片30及片状部件40的绝缘基础部件20设置在模型成型器100的模腔102内。图10是在模型成型器100的模腔102内设置了安装有实施例1的半导体片30及片状部件40的绝缘基础部件20时的平面图。使片状部件40的纵向垂直于流动化后的模制树脂的流动方向在模腔102内载置绝缘基础部件20。
返回图9,(2)在模型温度170~180℃的条件下将模制树脂片106熔融,施加压力,使其流入模型成型器100内的流道108内。
(3)利用模型成型器100将注入的模制树脂加压45~90秒,在模制树脂热硬化后,打开模型成型器100,取出模制树脂成形了的绝缘基础部件20。
这样,在利用传递膜模制法进行树脂注入时,通过使配置于半导体片30周边附近的片状部件40的纵向垂直于树脂的流动方向,利用片状部件40有效地遮蔽树脂的流动。因此,可降低树脂的压力造成的金属接合引线34的损伤,可良好地保持金属接合引线34的连接状态。另外,树脂的流动方向和配置于半导体片30周边附近的片状部件40的纵向所构成的角度最好垂直,但该角度不必严密地垂直,只要该角度至少在垂直±10度以内的角度范围,就可利用片状部件40的纵向的侧壁遮蔽树脂的流动,就属于本发明的垂直的概念。
使用上述的制造方法制造了所述实施例1~6的各形态的半导体装置,确认了可抑制引线流动,降低金属接合引线的连接不良。
另外,确认了引线流动的抑制效果在“1005尺寸”、“0603尺寸”及“0402尺寸”的情况下均是在模制树脂50的厚度为片状部件40的高度的2.0倍以下时显著。
在片状部件40的尺寸不是一种,例如“1005尺寸”和“0603尺寸”混在的情况下那样,在配置多种尺寸的片状部件40的情况下,确认了模制树脂50的厚度为最大尺寸的片状部件40的高度的2.0倍以下时,引线流动的抑制效果显著。
本发明不限于所述各实施例,根据本领域人员的知识也可以增加各种设计变更等变形,增加了这样的变形的实施例也属于本发明的范围。
另外,在所述实施例中,在绝缘基础部件上安装有半导体片及片状部件,但即使是作为具有铜等构成的配线图案且不使用用于支承半导体片等的芯件的无芯SIP(System in Package)所公知的ISB(Integrated System in Board:注册商标),也可适用本发明。
Claims (20)
1、一种树脂密封型半导体装置,其特征在于,其包括:绝缘基础部件,其设有导体电路;半导体片,其设于所述绝缘基础部件上,且与所述导体电路引线接合;多个片状部件,其安装在所述绝缘基础部件上;密封树脂,其密封所述半导体片和所述多个片状部件,在注入所述树脂时,至少在一个方向遮蔽所述树脂相对所述半导体片的流动的位置配置有所述多个片状部件。
2、如权利要求1所述的树脂密封型半导体装置,其特征在于,所述多个片状部件包围所述半导体片的四边,所述多个片状部件的纵向朝向一定的方向。
3、如权利要求1所述的树脂密封型半导体装置,其特征在于,所述多个片状部件包围所述半导体片的四边,对应所述各半导体片的各边设置的片状部件列中包括的片状部件的纵向朝向沿所述半导体片的各边的方向。
4、如权利要求1所述的树脂密封型半导体装置,其特征在于,所述多个片状部件沿所述绝缘基础部件的周边部配置,且所述多个片状部件的纵向朝向一定的方向。
5、如权利要求1所述的树脂密封型半导体装置,其特征在于,所述多个片状部件沿所述绝缘基础部件的周边部配置,对应所述绝缘基础部件各边设置的片状部件列中包括的片状部件的纵向朝向沿所述绝缘基础部件各边的方向。
6、如权利要求1所述的树脂密封型半导体装置,其特征在于,由所述多个片状部件构成的两列以上的片状部件列配置于所述半导体片的某一边的附近,且所述多个片状部件的纵向朝向所述半导体片的某一边的方向,各片状部件列中包括的各片状部件的片状部件列方向的位置和邻接的片状部件列中包括的各片状部件相互错开。
7、如权利要求1所述的树脂密封型半导体装置,其特征在于,所述密封树脂的厚度是所述多个片状部件的高度的2倍以下。
8、如权利要求2所述的树脂密封型半导体装置,其特征在于,所述密封树脂的厚度是所述多个片状部件的高度的2倍以下。
9、如权利要求3所述的树脂密封型半导体装置,其特征在于,所述密封树脂的厚度是所述多个片状部件的高度的2倍以下。
10、如权利要求4所述的树脂密封型半导体装置,其特征在于,所述密封树脂的厚度是所述多个片状部件的高度的2倍以下。
11、如权利要求5所述的树脂密封型半导体装置,其特征在于,所述密封树脂的厚度是所述多个片状部件的高度的2倍以下。
12、如权利要求6所述的树脂密封型半导体装置,其特征在于,所述密封树脂的厚度是所述多个片状部件的高度的2倍以下。
13、如权利要求1所述的树脂密封型半导体装置,其特征在于,所述密封树脂的厚度是所述多个片状部件中尺寸最大的片状部件的高度的2倍以下。
14、如权利要求2所述的树脂密封型半导体装置,其特征在于,所述密封树脂的厚度是所述多个片状部件中尺寸最大的片状部件的高度的2倍以下。
15、如权利要求3所述的树脂密封型半导体装置,其特征在于,所述密封树脂的厚度是所述多个片状部件中尺寸最大的片状部件的高度的2倍以下。
16、如权利要求4所述的树脂密封型半导体装置,其特征在于,所述密封树脂的厚度是所述多个片状部件中尺寸最大的片状部件的高度的2倍以下。
17、如权利要求5所述的树脂密封型半导体装置,其特征在于,所述密封树脂的厚度是所述多个片状部件中尺寸最大的片状部件的高度的2倍以下。
18、如权利要求6所述的树脂密封型半导体装置,其特征在于,所述密封树脂的厚度是所述多个片状部件中尺寸最大的片状部件的高度的2倍以下。
19、一种树脂密封型半导体装置,其特征在于,其包括:绝缘基础部件,其设有导体电路;半导体片,其设于所述绝缘基础部件上,且与所述导体电路引线接合;多个片状部件,其安装在所述绝缘基础部件上;密封树脂,其密封所述半导体片和所述多个片状部件,由所述多个片状部件构成的片状部件列配置在所述半导体片的某一边的附近,且所述多个片状部件的纵向朝向所述半导体片的某一边的方向,在所述片状部件列上设有仿真片状部件。
20、一种树脂密封型半导体装置的制造方法,利用树脂密封设于设有导体电路的绝缘基础部件上,且和所述导体电路引线接合的半导体片和表面安装型的多个片状部件,其特征在于,包括:沿所述半导体片的至少一个边使片状部件的纵向朝向所述一边方向配置所述多个片状部件的工序;使所述多个片状部件的纵向实质上与所述树脂的注入方向垂直,将所述绝缘基础部件载置在模型成型器的模腔内的工序;对所述半导体片和所述片状部件注入所述树脂的工序。
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CN105914188A (zh) * | 2015-02-24 | 2016-08-31 | 丰田自动车株式会社 | 半导体模块 |
CN106252302A (zh) * | 2015-06-09 | 2016-12-21 | 英飞凌科技股份有限公司 | 包括用于控制底部填充材料流动的结构的半导体装置 |
CN110600432A (zh) * | 2019-05-27 | 2019-12-20 | 华为技术有限公司 | 一种封装结构及移动终端 |
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JP2007294664A (ja) * | 2006-04-25 | 2007-11-08 | Pioneer Electronic Corp | 電子基板及びその製造方法 |
US8737085B2 (en) * | 2006-05-24 | 2014-05-27 | Dai Nippon Printing Co., Ltd. | Wiring board with a built-in component and method for manufacturing the same |
JP5067399B2 (ja) * | 2009-06-23 | 2012-11-07 | 株式会社デンソー | 電子装置の製造方法 |
DE102010063048A1 (de) * | 2010-12-14 | 2012-06-21 | Robert Bosch Gmbh | Verfahren zur Herstellung einer elektronischen Baugruppe mit Formkörper |
CN103843470B (zh) * | 2011-10-14 | 2017-03-15 | 株式会社村田制作所 | 元器件内置树脂基板 |
US9257412B2 (en) | 2012-09-12 | 2016-02-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Stress reduction apparatus |
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JPH04164352A (ja) * | 1990-10-29 | 1992-06-10 | Nec Corp | 混成集積回路装置 |
JPH0917912A (ja) | 1995-06-27 | 1997-01-17 | Rohm Co Ltd | 樹脂封止型半導体装置 |
JPH1131704A (ja) | 1997-07-10 | 1999-02-02 | Denso Corp | 半導体装置の製造方法 |
JPH11251344A (ja) | 1998-03-02 | 1999-09-17 | Hitachi Cable Ltd | ホールセンサの製造方法 |
US6172567B1 (en) * | 1998-08-31 | 2001-01-09 | Hitachi, Ltd. | Radio communication apparatus and radio frequency power amplifier |
JP2001326238A (ja) * | 2000-05-17 | 2001-11-22 | Toshiba Corp | 半導体装置、半導体装置の製造方法、樹脂封止金型及び半導体製造システム |
JP3558595B2 (ja) * | 2000-12-22 | 2004-08-25 | 松下電器産業株式会社 | 半導体チップ,半導体チップ群及びマルチチップモジュール |
JP2003078077A (ja) | 2001-09-05 | 2003-03-14 | Sanyo Electric Co Ltd | カメラモジュール |
JP2003234364A (ja) | 2002-02-06 | 2003-08-22 | Hitachi Ltd | ワイヤ変形予測装置およびワイヤ変形予測方法 |
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CN105914188A (zh) * | 2015-02-24 | 2016-08-31 | 丰田自动车株式会社 | 半导体模块 |
CN105914188B (zh) * | 2015-02-24 | 2018-07-10 | 丰田自动车株式会社 | 半导体模块 |
CN106252302A (zh) * | 2015-06-09 | 2016-12-21 | 英飞凌科技股份有限公司 | 包括用于控制底部填充材料流动的结构的半导体装置 |
CN110600432A (zh) * | 2019-05-27 | 2019-12-20 | 华为技术有限公司 | 一种封装结构及移动终端 |
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CN100411156C (zh) | 2008-08-13 |
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