CN1674102A - Magnetic recording medium, method for manufacturing recording medium and magnetic recording apparatus - Google Patents
Magnetic recording medium, method for manufacturing recording medium and magnetic recording apparatus Download PDFInfo
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- CN1674102A CN1674102A CNA2005100592999A CN200510059299A CN1674102A CN 1674102 A CN1674102 A CN 1674102A CN A2005100592999 A CNA2005100592999 A CN A2005100592999A CN 200510059299 A CN200510059299 A CN 200510059299A CN 1674102 A CN1674102 A CN 1674102A
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Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
- G11B5/736—Non-magnetic layer under a soft magnetic layer, e.g. between a substrate and a soft magnetic underlayer [SUL] or a keeper layer
- G11B5/7367—Physical structure of underlayer, e.g. texture
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/65—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition
- G11B5/657—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition containing inorganic, non-oxide compound of Si, N, P, B, H or C, e.g. in metal alloy or compound
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/65—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition
- G11B5/658—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition containing oxygen, e.g. molecular oxygen or magnetic oxide
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
- G11B5/7368—Non-polymeric layer under the lowermost magnetic recording layer
- G11B5/7369—Two or more non-magnetic underlayers, e.g. seed layers or barrier layers
- G11B5/737—Physical structure of underlayer, e.g. texture
Abstract
A magnetic recording layer is formed on an under-layer comprising a Cu crystalline grain layer and a deposited nitrogen atom layer on the Cu crystalline grain layer surface. Then the magnetic recording layer comprising very small average grain diameter and sharp grain diameter distribution is obtained. The magnetic recording medium comprising the magnetic recording layer shows excellent signal to noise ratio at high density recording.
Description
Cross reference to related application
The application is based on the Japanese patent application No.2004-090669 formerly that submits on March 25th, 2004, and requires its right of priority, quotes its full content as a reference at this.
Technical field
The present invention relates to the manufacture method and the magnetic recording system of magnetic recording medium, recording medium, more specifically, relate to the manufacture method of the magnetic recording medium with high record density, this recording medium and such as the magnetic recording systems such as hard disk drive that wherein are equipped with high-density recording medium.
Background technology
As the magnetic recording system that is used to write down with information reproduction, the application of hard disk drive (HDD) expands to various other applications such as home video machine and onboard navigation system from the initial application relevant with computing machine.Except having higher recording capacity and lower cost, the application of hard disk drive is expanded also because it has advantages such as higher data access speed, higher data memory reliability.Along with the expansion of HDD application, constantly increase for the demand of the HDD with bigger recording capacity.In order to satisfy this demand, developed the huge storage capacity recording technology by the recording density that increases magnetic recording medium.
Along with the increase of the recording density of the magnetic recording medium of HDD, the diameter of recorded bit size and reversal of magnetism unit becomes very little.As a result, the tracer signal magnetization and the record that are produced of the heat fluctuation effect that is caused by small size reversal of magnetism unit and the heat drop phenomenon of reproducing performance become fairly obvious.In addition, along with the size of recorded bit narrows down to very little size, it is big that the noise signal that the borderline region between the recorded bit occurs becomes, and noise becomes signal to noise ratio (S/N ratio) is produced bigger influence.Therefore,, need the magnetized thermal stability of stable recording signal on the one hand, under higher recording density condition, obtain lower noisiness on the other hand in order to obtain higher recording density.
In order to reduce the magnetic recording medium noise, the size that constitutes the magnetic crystal grain of recording layer has become littler so far.For example, by adding a spot of Ta or B (referring to flat 11-154321 of Japanese Patent Application No. and 2003-338029), thereby and separate out nonmagnetic Cr (referring to the flat 3-235218 of Japanese Patent Application No. peace 6-259764) by under suitable temperature, heat-treating, the magnetospheric magnetic crystal grain of the Co-Cr of widely used magnetic recording medium is made very little size.Recently, be used for obtaining having the method for the magnetic recording layer of the so-called granular structure that obtains by the oxide that adds at magnetosphere such as SiOx.In the magnetosphere of this granular structure, non magnetic grain circle material surrounds magnetic crystal grain (referring to flat 10-92637 of Japanese Patent Application No. and 2001-56922).
But the nucleation stage of the crystal grain that these methods can not be by turning back to bed course and magnetic recording layer is controlled the crystal grain of magnetosphere and bed course.These methods are only by selecting raw-material combination, composition of raw material or by selecting deposition conditions to control average magnetic crystal grain diameter and grain battery limit (BL).When managing that the crystal grain diameter in the bed course is reduced to littler size, will reduce the crystalline quality and the degree of grain alignment of the crystal grain in the bed course, and the crystalline quality decline meeting of bed course crystal grain exerts an influence to the formation of magnetic crystal grain.
In fact, have been found that the magnetospheric crystallite dimension of preparation in this way and the distribution range broad of grain circle width.The magnetic recording medium that the average grain size of magnetic crystal grain is reduced to 5nm shows very poor heat fluctuation durability.Ratio for the crystal grain of the unsettled very small size of heat fluctuation diameter is very high.Therefore be difficult to obtain in this way higher recording density.
Summary of the invention
In order to obtain the magnetic recording medium of high record density, the record of the influence of fluctuations of need not being heated magnetization stability also obtains low-noise performance under the high record density condition.So, obtain higher recording density, need solve two problems.A problem that solves is by reducing the mean diameter of the magnetic crystal grain in the magnetosphere, to obtain low-noise performance.Another problem that solves is, the less grain size distribution of the magnetic crystal grain of the too little crystal grain by not comprised the influence of fluctuations of being heated easily obtains thermal stability.
As the result of the long-term exploration work of carrying out for the solution that obtains these problems, the present inventor has important discovery.This discovery is, when bed course is that the size of made magnetospheric magnetic crystal grain can be very little, and grain size distribution is very narrow when having the Cu metal film of thin illuvium of nitrogen-atoms.After further studying, the inventor has solved the problems referred to above and has finished the present invention.
Magnetic recording medium of the present invention comprises: substrate, the magnetic recording layer on the bed course that forms on the substrate, bed course and the protective seam that forms on magnetic recording layer.Bed course comprises the illuvium of crystal grain diameter control bed course that contains Cu crystal grain and the nitrogen-atoms that forms on crystal grain diameter control bed course.
The manufacture method of magnetic recording medium of the present invention may further comprise the steps: form the crystal grain diameter control bed course that contains Cu crystal grain on substrate, at the illuvium of the nitrogen-atoms that forms deposit nitrogen on the crystal grain diameter control mat surface with have on the substrate of the nitrogen layer of deposit on the crystal grain diameter control bed course and form magnetic recording layer.
And magnetic recording of the present invention and transcriber comprise: above-mentioned magnetic recording medium, be used to drive magnetic recording medium the recording medium driving mechanism, be used to record information on the magnetic recording medium and from the magnetic recording medium information reproduction record and reproducing head mechanism, be used for the magnetic head driving mechanism of activation record and reproducing head and be used to handle the record and the reproducing signal disposal system of tracer signal and reproducing signal.
In the present invention, the crystallite dimension of bed course crystal grain Cu does not need very little.Therefore can avoid using little crystallite dimension bed course to obtain the problem that is run in the existing method of little magnetic crystal grain, like this, can obtain having the recording medium of improved record and reproducing characteristic according to the present invention.The crystal grain diameter control bed course of the Cu of comprising crystal grain of the present invention can comprise other element that can bring into play advantage of the present invention.
At present, not clear by using nitrogen deposit Cu metal film bed course to obtain the detailed mechanism of small-size grains.Here, will introduce two pieces of articles, and the present invention and these two pieces of articles will simply be compared.
In the one piece of article that in Surface Science (Surface Science) the 523rd volume 189-198 page or leaf (2003), occurs, reported by surface structure with alternate configurations that zone that nitrogen adsorbs and the zone that does not have absorption constitute.10
-9Under the ultravacuum of Pa after the purified treatment, attached nitrogen atom on bulky single crystal Cu surface.
Roll up in another piece article that occurs in the 169-177 page or leaf (2002) at Materials Science and Engineering (Material Science and Engineering) B96, the orderly arrangement of the lip-deep nitrogen-atoms of monocrystalline Cu is explained.Be interpreted as because the self-organizing structures that the stress interaction that occurs on the clean surface of bulk Cu monocrystalline produces arranging in order.
These two pieces of articles are compared with the present invention, and as can be seen, the crystal grain diameter control bed course that contains Cu crystal grain among the present invention is not bulky single crystal but film.Therefore, the surface of the bulk Cu monocrystalline in the stress state that has of the film among the present invention and these articles is very different.Therefore, for film of the present invention, can not expect to occur the orderly surface structure of the reorientation in these articles.At present, the present invention is used to obtain the machine-processed not clear of little crystallite dimension.Find that mechanism of the present invention is the major issue that needs solution.According to the present invention, made magnetospheric magnetic crystal grain can be very little, and can obtain having the signal to noise ratio (S/N ratio) of raising, the magnetic recording medium of high density recording.
Description of drawings
Fig. 1 is the schematic cross-sectional view of magnetic recording medium according to an embodiment of the invention.
Fig. 2 is according to embodiments of the invention, comprises the schematic cross-sectional view of magnetic recording medium of the orientation control bed course of the orientation that is used to control the Cu crystal grain between substrate and the crystal grain diameter control bed course.
Fig. 3 is used to represent scheme in the schematic face of magnetic recording medium with magnetic recording layer of the magnetic crystal grain arranged according to embodiments of the invention, with the form of tetragonal lattice structure.
Fig. 4 is the illustrative example of circular pattern of the reciprocal lattice of tetragonal lattice structure.
Fig. 5 is according to embodiments of the invention, has the schematic cross-sectional view of the magnetic recording medium of middle bed course.
Fig. 6 is according to embodiments of the invention, has the schematic cross-sectional view of the magnetic recording medium of soft magnetism bed course.
Fig. 7 is according to embodiments of the invention, has a sectional drawing of the magnetic recording medium of the bias layer that the soft magnetism bed course uses.
Fig. 8 is the schematic oblique view of magnetic recording system according to an embodiment of the invention, is used for by partly removing lid its structure being described.
Fig. 9 represents the relation between the average crystal grain diameter of the quantity of deposit nitrogen-atoms of unit area of example 1 and magnetic recording layer.
Figure 10 represents the relation between the mean diameter of the mean diameter of Cu crystal grain and the magnetic crystal grain in the magnetic recording layer.
Figure 11 represents the signal to noise ratio (S/N ratio) (SNR of the differentiated waveform of the quantity of magnetic crystal grain of unit area of magnetic recording layer of example 1 and magnetic recording layer
m) relation.
Embodiment
Below, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
Fig. 1 is the schematic cross-sectional view of magnetic recording medium according to an embodiment of the invention.In Fig. 1, crystal grain diameter control Cu film bed course 12a is set on substrate 11.On diameter control bed course 12a, form the illuvium 12b of nitrogen-atoms.On the illuvium 12b of nitrogen-atoms, form magnetic recording layer 14, and on magnetic recording layer 14, form protection and lubricating layer 15.
If the average atom numerical table with unit area shows, then the deposit number of nitrogen atoms of the required unit area of the illuvium 12b of the lip-deep nitrogen-atoms of crystal grain diameter control bed course 12a is 1 * 10
13～1 * 10
15Atom/cm
2When this quantity less than 1 * 10
13Atom/cm
2The time, on magnetic recording layer, can not produce tangible average crystal grain diameter and reduce effect.And experimental result shows, when this quantity greater than 1 * 10
15Atom/cm
2The time, the magnetic crystal grain degree of orientation of magnetic recording layer reduces.The quantity of the nitrogen-atoms of deposit is preferably 5 * 10
13～5 * 10
14Atom/cm
2
Can use the quantity of the nitrogen-atoms on the illuvium 12b of secondary ion mass spectrum (SIMS) method estimated nitrogen atom.Want the quantity of estimated nitrogen atom, also can adopt and use H
+Or
12The nuclear reaction analysis method (NRA) of C, Rutherford backscattering method, x-ray photoelectron optical spectroscopy (XPS), Auger electron optical spectroscopy (AES) wait other method.And, carry out this estimation, also can use the atom-probe method described in applied physics wall bulletin (Applied Physics Letters) the 69th volume 3095-3097 page or leaf.
As the method that is used for deposit nitrogen-atoms on the surface of crystal grain diameter control bed course 12a, can use the method that after deposit nitrogen-atoms or nitrogen radicals, exposes crystal grain diameter control bed course 12a.Also can use radiation nitrogen ion so that its arrive crystal grain diameter control bed course 12a or in blanket of nitrogen sputter Cu wait other method in the surface.And, can use the surface is exposed to NH
4Also remove the method for H in the atmosphere then.
The required Cu crystal grain of crystal grain diameter control bed course 12a has the flat surface of the broad of the magnetic recording layer 14 that is used to obtain to have well-crystallized.Therefore, require Cu crystal grain to have bigger average crystal grain diameter.The required average crystal grain diameter of Cu crystal grain is 50nm or bigger, and preferred diameter is 100nm or bigger.The single crystal film that does not more preferably have a boundary.When the Cu film is unsmooth to a certain extent,, can obtain this film if this film has the stepped surfaces on the formation film surface of major part.
Owing in magnetic recording layer 14, can obtain the higher magnetic crystal grain degree of orientation, need the wherein orientation crystal grain diameter control bed course 12a parallel of the identical crystal face of each Cu crystal grain with same level.To in magnetic recording layer 14, obtain very little magnetic crystal grain, just need the wherein orientation crystal grain diameter control bed course parallel of each (100) face of each Cu crystal grain especially with substrate surface.
As shown in Figure 2, can between substrate 11 and crystal grain diameter control bed course 12a, be provided for increasing the orientation control bed course 12c that crystal grain diameter is controlled (100) planar orientation degree of the Cu crystal grain among the bed course 12a.As orientation control bed course 12c, can use at least a material that is selected from NiAl, MnAl, MgO, NiO, TiN, Si and Ge.Needn't directly be adjacent to crystal grain diameter control bed course 12a orientation control bed course 12c is set, and can be provided with by the middle layer.
Each Cu crystal grain of crystal grain diameter key-course 12a on average forms the magnetic crystal grain in a plurality of magnetic recording layers 14.Obtain the bigger reproduction output of tracer signal, the required centre plane density of the magnetic crystal grain in the magnetic recording layer 14 is 1 * 10
12～8 * 10
12Crystal grain/cm
2When the centre plane density of magnetic crystal grain less than 1 * 10
12Crystal grain/cm
2The time, SNR reduces.When centre plane density is higher than 8 * 10
12Crystal grain/cm
2The time SNR also reduce.
From the present inventor's experimental result as can be seen, when magnetic crystal grain is arranged in the ordered structure of tetragonal lattice in fact, can significantly reduces the noise level of record and reproducing characteristic and make it to meet the requirements.
Fig. 3 is the schematic face inner structure of magnetic recording medium according to an embodiment of the invention.White object is represented magnetic crystal grain 1.The existence that transmission electron microscope (TEM) image of face that can be by Flame Image Process and analysis of magnetic recording layer 14 is arranged the tetragonal lattice structure of magnetic crystal grain 1 is confirmed.
Use Flame Image Process and analysis software, the result as the fast fourier transform of the binary picture that obtains by the picture contrast that increases magnetic crystal grain and grain battery limit (BL) can obtain spectrum.In the time can in spectrum, finding pattern shown in Figure 4 basically, just magnetic crystal grain can be regarded as arrangement with tetragonal lattice structure.In fact, two types periodic point or the ratio that encircles the distance at center are 1: 1/
(among Fig. 4 R
1With
).Can similarly estimate by magnetic recording layer being used low-energy electron diffraction and diffraction pattern being analyzed.
For magnetic recording medium of the present invention, need have the magnetic recording layer 14 of granular structure.The granular structure with non magnetic grain battery limit (BL) in the magnetic recording layer 14 causes the exchange interaction between the magnetic crystal grain to reduce, and the transformation noise that causes writing down with reproducing characteristic obviously reduces.
The multilayer film that needs the ordered alloy such as disordered alloy, Fe-Pt, Co-Pt and Fe-Pd of Co-Cr and Co-Pt etc. and Co/Pt and Co/Pd etc. is as the material as magnetic recording layer 14.Need these alloys and multilayer film to be because they have higher crystalline anisotropy's energy and thereby have a higher heat fluctuation durability.If desired, can add element, improve the magnetic behavior of these alloys and multilayer by adding Cu, B and Cr etc.Also can use CoCrPt, CoCrPtB, CoCrPtTa, CoCrPtNd, CoCrPtCu and FePtCu alloy material as magnetic recording layer 14.
Material as the grain battery limit (BL) that is used to form granular structure needs compounds such as oxide and carbonide, because these compounds do not form solid solution with the material of above-mentioned formation magnetic crystal grain, and is easy to separated.For the compound that forms the grain battery limit (BL), can enumerate SiO
x, TiO
x, CrO
x, AlO
x, MgO
x, TaO
x, SiC
x, TiC
xAnd TaC
xDeng compound.
As shown in Figure 5, except crystal grain diameter control bed course 12a and deposit nitrogen layer 12b and orientation control bed course 12c, can also be provided for controlling the middle bed course 12d of the characteristic of magnetic recording layer 14.
By the granular structure layer is used as middle bed course 12d, can improve the crystal orientation degree.Except less average grain size and less crystal grain diameter distributed, the improvement of crystal orientation degree also can improve record and reproducing characteristic.
As the non magnetic crystalline material of the middle bed course 12d with granular structure, can enumerate Pt, Pd, Ir, Ag, Cu, Ru and Rh.Need these metal materials to be and also can improve the crystal orientation degree because these metal materials have the excellent lattice compatibility with above-mentioned magnetic crystal grain.
Material as the grain battery limit (BL) that is used to form middle bed course 12d needs compounds such as oxide and carbonide.The material that these compounds are used to form a battery limit (BL) is because these compounds do not form common solution with the non magnetic crystalline material of above-mentioned formation magnetic crystal grain, and separates easily.For the compound that forms the grain battery limit (BL), can enumerate SiO
x, TiO
x, CrO
x, AlO
x, MgO
x, TaO
x, SiC
x, TiC
xAnd TaC
xDeng compound.When bed course did not have magnetic on the whole, the material that constitutes bed course can comprise magnetic metal.
When between each bed course and substrate 11, soft magnetism bed course 16 being set as shown in Figure 6, magnetic recording medium of the present invention is used as perpendicular magnetic recording medium.
In the above-mentioned magnetic recording medium of the so-called vertical double-layer medium of the magnetic recording layer 14 that can on being included in soft ferromagnetic layer 16, be provided with soft magnetism bed course 16 is set.Soft magnetism bed course 16 is shared the partial function of magnetic head by returning by passing magnetic recording medium from single-pole-piece magnetic head, level and returning the magnetic flux that the recording magnetic field of magnetic head produces.Therefore, the soft magnetism bed course 16 that is provided with in magnetic recording medium has the effect that the precipitous vertical magnetic field with enough amplitudes is provided for magnetic recording layer 14.
As soft magnetism bed course 16, for example, can enumerate CoZrNb, FeSiAl, FeTaC, CoTaC, NiFe, Fe, FeCoB, FeCoN and FeTaN.
As shown in Figure 7, can between soft magnetism bed course 16 and substrate 11, be provided with and for example comprise the hard face inner magnet layer and the bias layer 17 of antiferromagnetic material layer basically.In soft magnetism bed course 16, be easy to form magnetic domain, and magnetic domain can cause the noise of peak value shape.By along radially the applying magnetic field and the soft magnetism bed course 16 that is arranged on the bias layer 17 is applied bias field of bias layer 17, can avoid the formation of magnetic domain.Avoid forming bigger magnetic domain, bias layer can be the sandwich construction of anisotropy field with disperse.
As the material that constitutes bias layer 17, can enumerate CoCrPt, CoCrPtB, CoCrPtTa, CoCrPtTaNd, CoSm, CoPt, FePt, CoPtO, CoPtCrO, CoPt-SiO
2, CoCrPt-SiO
2And CoCrPtO-SiO
2
As shown in Figure 6 and Figure 7, (100) the faceted crystal degree of orientation for the Cu crystal grain that improves crystal grain can be provided with above-mentioned orientation key-course 12c.
Can be with glass substrate, Al alloy substrate or Si single crystalline substrate, ceramic substrate and plastic as substrate 11 with oxide surface.And, can use the inorganics substrate of for example using NiP coating.
Can on magnetic recording layer 14, form protective seam 15.As protective seam 15, can use graphite or diamond-like carbon.As protective layer material, can enumerate SiN
x, SiO
xAnd CN
xWait other material.
As the method for above-mentioned each layer of deposit, can use vacuum and steam method, various sputtering method, molecular beam epitaxy, ion beam steaming process, laser ablation method and chemical vapor deposition method.
Fig. 8 is the schematic oblique view of magnetic recording system according to an embodiment of the invention, is used for by partly removing lid its structure being described.
In Fig. 8, fixing according to disk 81 of the present invention on main shaft 82, and by not shown Spindle Motor with this disk of constant speed drive.On the top of the overarm 84 that constitutes by two laminal leaf springs, be fixed for the slide block 83 that carries the write head that is used for recorded information on the surface that contacts disk 81 and be used to reproduce the MR magnetic head of recorded information.Overarm 84 is connected with one side of overarm arm 85, and this overarm arm has the bobbin (bobbin) that holds not shown drive coil.
Another side at overarm arm 85 is provided with voice coil motor 86, and this voice coil motor 86 is a kind of linear motors.Constitute voice coil motor 86 by comprising drive coil, permanent magnet on the bobbin that is wound into overarm arm 85 and the magnetic circuit of opposite yoke.
Overarm arm 85 is supported by not shown ball bearing, and is driven to produce the circulation wobbling action by voice coil motor 86.Position by the slide block 83 on the voice coil motor 86 control disks 81.In Fig. 8, the part of lid 88 is shown.
Below, will further describe and be used to explain example of the present invention.
(example 1)
Non magnetic 2.5 inches glass substrate are put into the vacuum chamber of the c-3010 type sputter equipment of ANELVA company.
The vacuum chamber of sputter equipment is evacuated down to 1 * 10
-6Pa or lower.Use infrared heater that substrate is heated to about 300 ℃ then.Substrate temperature is maintained at about 300 ℃, and the thick CoZrNb film of deposit 200nm is as the soft magnetism bed course, and the thick Cu film of the about 30nm of deposit then.Then substrate temperature is elevated to about 500 ℃, and the nitrogen atmosphere of nitrogen ion with 0.1Pa is radiated on the Cu film surface with the ion gun of 200eV.After the nitrogen ionizing radiation, deposit becomes the thick Fe of 5nm
50Pt
50Film.
The thick carbon film of deposit 5nm then.Want deposit CoZrNb film, Cu film, Fe
50Pt
50Film and C film, ar pressure are respectively 0.7 handkerchief, 0.7 handkerchief, 5 handkerchiefs and 0.7 handkerchief, and target is respectively CoZrNb, Cu, Fe
50Pt
50And C.Use d.c. sputtering to carry out sputter.
For CoZrNb, Fe
50Pt
50With the C deposit, will be fixed as 1000W to the power of target input, and for the Cu deposit, this power changes in the scope of 100～1000W.
Use with the essentially identical method manufacturing of said procedure and have Co
50Pt
50, Fe
50Pd
50, Co
70Cr
10Pt
10But not Fe
50Pt
50Magnetic recording medium.By selecting the ionizing radiation time, control is deposited to the amount of the lip-deep nitrogen deposit of Cu film.By changing power, change the crystal grain diameter of Cu film to the target input.
After finishing deposit, by dip coating thick each protective seam of PFPE (PFPE) lubricant applying of about 1.3nm.Then, obtain each magnetic recording medium sample.
As a comparative example, by the conventional perpendicular magnetic recording medium of following steps preparation.Non magnetic 2.5 inches glass substrate are put into the vacuum chamber of sputter equipment, and vacuum chamber is evacuated down to 1 * 10
-6Pa or lower.After using infrared heater that substrate is heated to about 300 ℃, deposit is as the thick CoZrNb film of the 200nm of soft magnetism bed course, as the thick Ta film of the 10nm that plants layer (seed-layer), as the thick Ru film of the 20nm of bed course, as the thick Co of the 15nm of magnetic recording layer on each substrate
65-Cr
20-Pt
14-Ta
1Layer and the thick protective seam of 5nm, and use step coating lubricant same as the previously described embodiments.Want deposit CoZrNb film, Ta film, Ru film and CoCrPtTa film, ar pressure is respectively 0.7 handkerchief, 0.7 handkerchief, 0.7 handkerchief, 5 handkerchiefs and 0.7 handkerchief, and target is respectively CoZrNb, Ta, Ru, Co
65Cr
20Pt
14Ta
1Layer.Use d.c. sputtering to carry out sputter.To be fixed as 1000W to the power of target input.
By accelerating potential is that the transmission electron microscope (TEM) of 400kV confirms that each makes micromechanism, crystal grain diameter and the grain size distribution of sample.Adopt with reported method in Surface Science (Surface Science) the 490th volume 336-350 page or leaf and similarly use H
+NRA and use Cs
+The SIMS method, obtain and confirm the quantity of the nitrogen-atoms of deposit on each Cu film.
Use universal stage to estimate the record and the reproducing characteristic (read write attribute, R/W characteristic) of each magnetic recording medium.Applied magnetic head is the combination of 0.3 μ m track width single-pole-piece magnetic head and 0.2 μ m track width MR magnetic head.
Measuring condition is identical, that is, magnetic head is constant to the position at center to be 20mm, and rotating speed is 4200rpm.
Measurement is as the signal to noise ratio (S/N ratio) (SNR of the differentiated waveform of the output of differentiating circuit
m), with its SNR as each magnetic recording medium.Measured signal S is the output of the linear recording density of 119kfci, and measured noise is the root-mean-square value of 716kfci.In addition, the half width (dPW of estimation differentiated waveform
50), to obtain index with the resolution of noting down.
Table 1 illustrates the magnetospheric average crystal grain diameter d of each magnetic recording medium
MagAnd standard deviation.
Table 1
| Magnetic recording layer | Mean diameter d Mag(nm) | Standard deviation (nm) | |
| Example 1-1 | ????FePt | ????4.5 | ????1.0 |
| Example 1-2 | ????CoCrPt | ????4.3 | ????1.0 |
| Example 1-3 | ????CoPt | ????4.8 | ????1.1 |
| Example 1-4 | ????FePd | ????4.8 | ????1.3 |
| Comparative example 1 | (conventional medium) | ????7.1 | ????2.5 |
The magnetospheric average crystal grain diameter d of the magnetic recording medium of each magnetic recording medium of example 1 and comparative example 1 in the comparison sheet 1
MagAnd standard deviation, each magnetic recording medium of example 1 shows the less average crystal grain diameter with less mean deviation as can be seen.
Fig. 9 represents the Fe that obtains for by nuclear reaction analysis NRA
50Pt
50Magnetosphere, deposit nitrogen quantity θ and average magnetic crystal grain diameter d
MagBetween relation.As can be seen from this figure, when the θ value be 1 * 10
13～1 * 10
15Atom/cm
2The time, crystal grain is very little and be desired.For Co
50Pt
50, Fe
50Pd
50And Co
70Cr
10Pt
20Magnetospheric situation obtains similar result.For each magnetic recording medium,, detect at the nitrogen-atoms that comprises deposit on the crystal grain diameter control bed course of Cu crystal grain by using SIMS to carry out the chemical element distribution measuring along depth direction.
Figure 10 represents for having 2 * 10
14Atom/cm
2The Fe of deposit nitrogen
50Pd
50Magnetosphere, the relation between the mean diameter of the Cu crystal grain on the Cu layer and the mean diameter of magnetic crystal grain.As can be seen from Figure 10, when the average crystal grain diameter of Cu layer be 50nm or when bigger, magnetospheric mean diameter becomes very little.
Figure 11 represents the mean diameter d for Cu
CuBe the situation of 100nm, the SNR of each magnetic recording medium
mAnd the relation between quantity (surface density of the crystal grain) n of the unit area magnetic crystal grain that obtains by TEM observation.As shown in figure 11, when the n value be 1 * 10
12～8 * 10
12Crystal grain/cm
2The time, SNR
mIncrease and be desired.When the n value is 1 * 10
12～8 * 10
12Crystal grain/cm
2The time, a plurality of magnetic crystal grains of magnetic recording medium are on average arranged on each Cu crystal grain.
Use Flame Image Process and analysis software " Image-Pro Plus " (U.S. MediaCybernetics company) orderly arranging situation to TEM image studies magnetic crystal grain in each face.Revise for each TEM image, the contrast with the zone by increasing magnetic crystal grain and other between regional obtains the pattern of being expressed by binary variable.Then with the image of FFT conversion by the binary picture expression.As a result, do not observe the orderly arrangement of the magnetic crystal grain in the magnetosphere for conventional medium.On the other hand, be 1 * 10 for the n value
12～8 * 10
12Crystal grain/cm
2Each magnetic recording medium, observe the orderly arrangement of the magnetic crystal grain of tetragonal lattice structure.
(example 2)
Non magnetic 2.5 inches glass substrate are put into vacuum chamber, and vacuum chamber is evacuated down to 1 * 10
-6Pa or lower.Use the method described in the example 1 to implement CoZrNb soft magnetism bed course, Cu deposit and nitrogen depositing technics then.Use (Fe then
50-Pt
50)-10mol%SiO
2Composite target material forms the thick (Fe of 5nm
50-Pt
50)-SiO
2Magnetosphere.And, use various target manufacturings to replace the Fe of disk in the example 1
50Pt
50Layer, has a Co respectively
50Pt
50, Fe
50Pd
50And Co
70Cr
10Pt
20Disk.Similarly, the SiO in the replacement example 1
2Layer, manufacturing have TiO, Al respectively
2O
3, TiC and TaC disk.Then for the magnetic recording medium deposit carbon protective layer of every kind of manufacturing and apply lubricating layer.
Table 2 illustrates the SNRm value and the dPW of each magnetic recording medium
50Value.Magnetic recording medium with the magnetic recording layer that contains compound shows the SNRm of increase and is desired.For every kind of membrane complex that contains compound, be granular structure and roughly be the four directions arrangement to magnetospheric magnetic crystal grain by tem observation.
Table 2
| Magnetic recording layer | Signal to noise ratio snr m (dB) | Half width dPW 50???nm) | |
| Example 2-1 | ????FePt | ????17.1 | ???98 |
| Example 2-2 | ????CoCrPt | ????17.3 | ???93 |
| Example 2-3 | ????CoPt | ????17.0 | ???99 |
| Example 2-4 | ????FePd | ????16.8 | ???97 |
| Example 2-5 | ????FePt-SiO 2 | ????18.3 | ???90 |
| Example 2-6 | ????CoCrPt-SiO 2 | ????18.6 | ???89 |
| Example 2-7 | ????CoPt-SiO 2 | ????18.0 | ???90 |
| Example 2-8 | ????FePd-SiO 2 | ????18.0 | ???89 |
| Example 2-9 | ????FePt-MgO | ????18.2 | ???91 |
| Example 2-10 | ????CoCrPt-MgO | ????18.2 | ???90 |
| Example 2-11 | ????CoPt-MgO | ????18.0 | ???87 |
| Example 2-12 | ????FePd-MgO | ????17.8 | ???86 |
| Example 2-13 | ????FePt-Al 2O 3 | ????17.9 | ???89 |
| Example 2-14 | ????CoCrPt-Al 2O 3 | ????17.9 | ???86 |
| Example 2-15 | ????CoPt-Al 2O 3 | ????17.7 | ???87 |
| Example 2-16 | ????FePd-Al 2O 3 | ????17.7 | ???89 |
| Example 2-17 | ????FePt-TiO | ????18.1 | ???87 |
| Example 2-18 | ????CoCrPt-TiO | ????18.2 | ???90 |
| Example 2-19 | ????CoPt-TiO | ????17.9 | ???87 |
| Example 2-20 | ????FePd-TiO | ????17.9 | ???88 |
| Example 2-21 | ????FePt-TiC | ????17.8 | ???90 |
| Example 2-22 | ????CoCrPt-TiC | ????17.8 | ???92 |
| Example 2-23 | ????CoPt-TiC | ????17.7 | ???90 |
| Example 2-24 | ????FePd-TiC | ????17.8 | ???88 |
| Example 2-25 | ????FePt-TaC | ????17.9 | ???87 |
| Example 2-26 | ????CoCrPt-TaC | ????17.8 | ???90 |
| Example 2-27 | ????CoPt-TaC | ????17.8 | ???87 |
| Example 2-28 | ????FePd-TaC | ????17.8 | ???88 |
| Comparative example 2 | (conventional medium) | ????15.4 | ???109 |
(example 3)
Use technology 2.5 inches non magnetic glass substrate of hard disk shape of preparation of example 1 and carry out the film deposit, up to finishing the nitrogen deposition process.Then, use Pt-10mol%SiO
2The Pt-SiO that composite target material deposit 10nm is thick
2Layer.At Pt-SiO
2The various magnetic recording layers of deposit on the layer, and after using the program deposit carbon protective layer described in the example 2 and applying lubricating layer, obtain various magnetic recording mediums.In addition, use respectively various composite target materials obtain replacing the Pt bed course, respectively have Pd, Ir, Ag, Cu, Ru and Rh bed course magnetic recording medium, replace SiO
2Bed course, have TiO, an Al respectively
2O
3, MgO, TiC and TaC bed course magnetic recording medium.
Table 3 illustrates has CoCrPt-SiO
2The SNR of the various magnetic recording mediums of magnetic recording layer and various bed courses
mAnd dPW
50
Table 3
| Bed course | Signal to noise ratio snr m (dB) | Half width dPW 50???(nm) | |
| Example 3-1 | ????Pt-SiO 2 | ????19.6 | ???80 |
| Example 3-2 | ????Pd-SiO 2 | ????19.6 | ???81 |
| Example 3-3 | ????Ir-SiO 2 | ????19.3 | ???79 |
| Example 3-4 | ????Ag-SiO 2 | ????19.0 | ???78 |
| Example 3-5 | ????Cu-SiO 2 | ????18.9 | ???79 |
| Example 3-6 | ????Ru-SiO 2 | ????19.8 | ???77 |
| Example 3-7 | ????Rh-SiO 2 | ????19.7 | ???77 |
| Example 3-8 | ????Pt-MgO | ????19.4 | ???81 |
| Example 3-9 | ????Pd-MgO | ????19.4 | ???80 |
| Example 3-10 | ????Ir-MgO | ????19.0 | ???77 |
| Example 3-11 | ????Ag-MgO | ????19.0 | ???81 |
| Example 3-12 | ????Cu-MgO | ????19.3 | ???81 |
| Example 3-13 | ????Ru-MgO | ????19.5 | ???79 |
| Example 3-14 | ????Rh-MgO | ????19.5 | ???77 |
| Example 3-15 | ????Pt-Al 2O 3 | ????19.4 | ???77 |
| Example 3-16 | ????Pd-Al 2O 3 | ????19.6 | ???82 |
| Example 3-17 | ????Ir-Al 2O 3 | ????19.2 | ???80 |
| Example 3-18 | ????Ag-Al 2O 3 | ????19.4 | ???79 |
| Example 3-19 | ????Cu-Al 2O 3 | ????19.5 | ???82 |
| Example 3-20 | ????Ru-Al 2O 3 | ????19.7 | ???75 |
| Example 3-21 | ????Rh-Al 2O 3 | ????19.4 | ???78 |
| Example 3-22 | ????Pt-TiO | ????19.6 | ???73 |
| Example 3-23 | ????Pd-TiO | ????19.9 | ???80 |
| Example 3-24 | ????Ir-TiO | ????19.3 | ???78 |
| Example 3-25 | ????Ag-TiO | ????19.5 | ???74 |
| Example 3-26 | ????Cu-TiO | ????19.0 | ???79 |
| Example 3-27 | ????Ru-TiO | ????20.0 | ???76 |
| Example 3-28 | ????Rh-TiO | ????19.8 | ???78 |
| Example 3-29 | ????Pt-TiC | ????19.3 | ???79 |
| Example 3-30 | ????Pd-TiC | ????19.3 | ???75 |
| Example 3-31 | ????Ir-TiC | ????19.5 | ???77 |
| Example 3-32 | ????Ag-TiC | ????19.0 | ???78 |
| Example 3-33 | ????Cu-TiC | ????18.9 | ???74 |
| Example 3-34 | ????Ru-TiC | ????18.9 | ???74 |
| Example 3-35 | ????Rh-TiC | ????18.9 | ???80 |
| Example 3-36 | ????Pt-TaC | ????19.0 | ???79 |
| Example 3-37 | ????Pd-TaC | ????19.0 | ???77 |
| Example 3-38 | ????Ir-TaC | ????19.3 | ???73 |
| Example 3-39 | ????Ag-TaC | ????19.2 | ???74 |
| Example 3-40 | ????Cu-TaC | ????19.2 | ???78 |
| Example 3-41 | ????Ru-TaC | ????19.1 | ???75 |
| Example 3-42 | ????Rh-TaC | ????19.1 | ???79 |
As can be seen, at CoCrPt-SiO
2Magnetic recording layer is provided with the SNR of the magnetic recording medium of the bed course compound that contains compound down
mIncrease.Can see similar result for magnetic recording medium with other magnetic recording layer.Each magnetic recording layer and bed course are granular structure, and magnetic crystal grain roughly is the four directions arrangement.
(example 4)
Prepare 2.5 inches non magnetic glass substrate of hard disk shape, and except one deck orientation key-course was set, other program was identical with example 3 between soft magnetism bed course and crystal grain diameter key-course.Obtain various magnetic recording mediums then.As the orientation key-course, the thick NiAl layer of deposit 5nm in the Ar of 0.7Pa atmosphere by preparation and use NiAl target.In addition, make the magnetic recording medium of the orientation key-course that has MgO, NiO, MnAl, Ge, Si and TiN respectively.
Table 4 illustrates has CoCrPt-SiO
2Magnetic recording layer and Pt-SiO
2The record of each magnetic recording medium of bed course and reproducing characteristic.
Table 4
| Orientation control bed course | Signal to noise ratio snr m (dB) | Half width DPW 50????(nm) | |
| Example 4-1 | Do not have | ????19.8 | ????77 |
| Example 4-2 | ????NiAl | ????20.5 | ????76 |
| Example 4-3 | ????MgO | ????20.3 | ????75 |
| Example 4-4 | ????NiO | ????20.0 | ????76 |
| Example 4-5 | ????MnAl | ????20.3 | ????77 |
| Example 4-6 | ????Si | ????20.0 | ????73 |
| Example 4-7 | ????Ge | ????20.1 | ????76 |
| Example 4-8 | ????TiN | ????20.4 | ????76 |
As shown in table 4, by orientation key-course, SNR are set
mFurther increase.For the magnetic recording medium of other combination, can see similar result with bed course and magnetic recording layer.
Though the present invention has been described by its preferred embodiment, it will be appreciated by those skilled in the art that under the conditions without departing from the spirit and scope of the present invention, can make various modifications to it.
Claims (21)
1. magnetic recording medium comprises:
Substrate;
The bed course that on above-mentioned substrate, forms;
Magnetic recording layer on the above-mentioned bed course; With
The protective seam that on above-mentioned magnetic recording layer, forms,
It is characterized in that the above-mentioned bed course that comprises the crystal grain diameter key-course comprises Cu crystal grain and the illuvium of the nitrogen-atoms that forms on above-mentioned crystal grain diameter control mat surface.
2. according to the magnetic recording medium of claim 1,
It is characterized in that it is 1 * 10 that the illuvium of above-mentioned nitrogen-atoms comprises centre plane density
13～1 * 10
15Atom/cm
2Nitrogen-atoms.
3. according to the magnetic recording medium of claim 1,
It is characterized in that it is 50nm or bigger Cu crystal grain that above-mentioned crystal grain diameter control bed course comprises mean diameter.
4. according to the magnetic recording medium of claim 1,
It is characterized in that above-mentioned crystal grain diameter control bed course comprises the orientation Cu crystal grain parallel with above-mentioned substrate surface of each (100) face.
5. according to the magnetic recording medium of claim 1,
It is characterized in that it is 1 * 10 that above-mentioned magnetic recording layer comprises centre plane density
12～8 * 10
12Crystal grain/cm
2Magnetic crystal grain, and a Cu crystal grain of above-mentioned diameter control bed course on average keeps a plurality of magnetic crystal grains.
6. according to the magnetic recording medium of claim 1,
It is characterized in that above-mentioned magnetic recording layer comprises the magnetic crystal grain of arranging with the form of tetragonal lattice structure.
7. according to the magnetic recording medium of claim 1,
It is characterized in that above-mentioned magnetic recording layer comprises the magnetic crystal grain of granular structure and surrounds the grain battery limit (BL) of each magnetic crystal grain.
8. according to the magnetic recording medium of claim 1,
It is characterized in that above-mentioned magnetic recording layer comprises the magnetic crystal grain that is selected from the alloy among Co-Cr, Co-Pt, Fe-Pt and the Fe-Pd basically and by at least a grain battery limit (BL) that constitutes that is selected from basically in oxide and the carbonide.
9. according to the magnetic recording medium of claim 1,
It is characterized in that above-mentioned magnetic recording medium is included at least one the middle bed course that is provided with between the illuvium of above-mentioned magnetic recording layer and above-mentioned nitrogen-atoms.
10. according to the magnetic recording medium of claim 9,
It is characterized in that above-mentioned middle bed course comprises at least one granular structure layer that comprises non magnetic crystal grain and surround the grain battery limit (BL) of each non magnetic crystal grain.
11. according to the magnetic recording medium of claim 10,
It is characterized in that bed course comprises the non magnetic crystal grain of at least a metal that is selected from basically among Pt, Pd, Ir, Ag, Cu, Ru and the Rh and comprises at least a grain battery limit (BL) that is selected from oxide and the nitride in the middle of the above-mentioned granular structure.
12. according to the magnetic recording medium of claim 1,
It is characterized in that above-mentioned magnetic recording medium is included in the soft magnetism bed course with soft magnetism characteristic that is provided with between above-mentioned crystal grain diameter control bed course and the above-mentioned substrate.
13. according to the magnetic recording medium of claim 1,
It is characterized in that, above-mentioned magnetic recording medium comprise between above-mentioned crystal grain diameter control bed course and above-mentioned soft magnetism bed course, have a grain orientation control bed course that is selected from least a basic chemical constitution among NiAl, MnAl, MgO, NiO, TiN, Si and the Ge basically.
14. a magnetic recording medium manufacture method may further comprise the steps:
On substrate, form the crystal grain diameter key-course that comprises Cu crystal grain;
On above-mentioned crystal grain diameter control mat surface, form the illuvium of the nitrogen-atoms of deposit nitrogen; With
On the substrate of crystal grain diameter control bed course, form magnetic recording layer with above-mentioned deposit nitrogen layer.
15. according to the magnetic recording medium manufacture method of claim 14,
It is characterized in that in the step of the illuvium of above-mentioned formation nitrogen-atoms, deposit centre plane density is 1 * 10 on above-mentioned crystal grain diameter control mat surface
13～1 * 10
15Atom/cm
2Nitrogen-atoms.
16. according to the magnetic recording medium manufacture method of claim 14,
It is characterized in that, in the step of above-mentioned formation crystal grain diameter control bed course, form the above-mentioned crystal grain diameter control bed course that comprises 50nm or bigger Cu crystal grain, and, in the step of the illuvium of above-mentioned formation nitrogen-atoms, the above-mentioned nitrogen-atoms of deposit on above-mentioned crystal grain diameter control mat surface.
17. according to the magnetic recording medium manufacture method of claim 14,
It is characterized in that in the step of above-mentioned formation crystal grain diameter key-course, the orientation above-mentioned crystal grain diameter parallel with above-mentioned substrate surface that forms (100) face of crystal grain controlled the above-mentioned Cu crystal grain of bed course.
18. according to the magnetic recording medium manufacture method of claim 17,
It is characterized in that, in the step of above-mentioned formation magnetic recording layer, in above-mentioned magnetic recording aspect, arrange above-mentioned magnetic crystal grain with the form of tetragonal lattice structure basically.
19. according to the magnetic recording medium manufacture method of claim 14,
It is characterized in that in the step of above-mentioned formation magnetic recording layer, forming centre plane density is 1 * 10
12～8 * 10
12Crystal grain/cm
2Above-mentioned magnetic recording layer in above-mentioned magnetic crystal grain.
20. magnetic recording and transcriber comprise:
The magnetic recording medium of the protective seam that comprises substrate, the magnetic recording layer on the bed course that forms on the above-mentioned substrate, above-mentioned bed course and on above-mentioned magnetic recording layer, form; wherein; described bed course comprises the illuvium of crystal grain diameter control bed course that contains Cu crystal grain and the nitrogen-atoms that forms on above-mentioned crystal grain diameter control bed course
Be used to drive the recording medium driving mechanism of above-mentioned magnetic recording medium;
Be used to record information on the above-mentioned magnetic recording medium and the record and the reproducing head mechanism of information reproduction from the above-mentioned magnetic recording medium;
Be used to drive the magnetic head driving mechanism of above-mentioned record and reproducing head; With
Be used to handle the record and the reproducing signal disposal system of tracer signal and reproducing signal.
21. according to the magnetic recording and the transcriber of claim 20,
It is characterized in that above-mentioned record and reproducing head mechanism comprise single-pole-piece magnetic head.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004090669A JP4874526B2 (en) | 2004-03-25 | 2004-03-25 | Magnetic recording medium, method of manufacturing magnetic recording medium, and magnetic recording / reproducing apparatus |
| JP2004090669 | 2004-03-25 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1674102A true CN1674102A (en) | 2005-09-28 |
| CN1333387C CN1333387C (en) | 2007-08-22 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005100592999A Expired - Fee Related CN1333387C (en) | 2004-03-25 | 2005-03-25 | Magnetic recording medium, method for manufacturing recording medium and magnetic recording apparatus |
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| Country | Link |
|---|---|
| US (2) | US7416794B2 (en) |
| JP (1) | JP4874526B2 (en) |
| CN (1) | CN1333387C (en) |
| SG (1) | SG115788A1 (en) |
Cited By (1)
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|---|---|---|---|---|
| CN104364846A (en) * | 2012-12-06 | 2015-02-18 | 富士电机株式会社 | Perpendicular magnetic recording medium |
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| JP4585214B2 (en) | 2004-03-25 | 2010-11-24 | 株式会社東芝 | Magnetic recording medium and magnetic recording / reproducing apparatus using the same |
| JP2005276364A (en) * | 2004-03-25 | 2005-10-06 | Toshiba Corp | Magnetic recording medium, method for manufacturing the same, and magnetic recording/reproducing device using the same |
| US20070099032A1 (en) * | 2005-11-02 | 2007-05-03 | Heraeus, Inc., A Corporation Of The State Of Arizona | Deposition of enhanced seed layer using tantalum alloy based sputter target |
| JP4557880B2 (en) | 2005-12-20 | 2010-10-06 | 株式会社東芝 | Magnetic recording medium and magnetic recording / reproducing apparatus |
| US9034153B2 (en) | 2006-01-13 | 2015-05-19 | Jx Nippon Mining & Metals Corporation | Nonmagnetic material particle dispersed ferromagnetic material sputtering target |
| US20070190364A1 (en) * | 2006-02-14 | 2007-08-16 | Heraeus, Inc. | Ruthenium alloy magnetic media and sputter targets |
| JP2008027505A (en) * | 2006-07-20 | 2008-02-07 | Fuji Electric Device Technology Co Ltd | Perpendicular magnetic recording medium and its manufacturing method |
| WO2008038664A1 (en) * | 2006-09-29 | 2008-04-03 | Hoya Corporation | Magnetic recording medium |
| JP2008146693A (en) * | 2006-12-06 | 2008-06-26 | Fuji Electric Device Technology Co Ltd | Manufacturing method of perpendicular magnetic recording medium |
| JP5058642B2 (en) * | 2007-03-26 | 2012-10-24 | 財団法人神奈川科学技術アカデミー | Manufacturing method of semiconductor substrate |
| US8648589B2 (en) * | 2009-10-16 | 2014-02-11 | HGST Netherlands B.V. | Magnetoresistive sensor employing nitrogenated Cu/Ag under-layers with (100) textured growth as templates for CoFe, CoFeX, and Co2(MnFe)X alloys |
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| US9412404B2 (en) | 2009-12-15 | 2016-08-09 | HGST Netherlands B.V. | Onset layer for perpendicular magnetic recording media |
| JP5127957B2 (en) | 2010-11-26 | 2013-01-23 | 株式会社東芝 | Magnetic recording medium, manufacturing method thereof, and magnetic recording / reproducing apparatus |
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-
2004
- 2004-03-25 JP JP2004090669A patent/JP4874526B2/en not_active Expired - Fee Related
-
2005
- 2005-03-16 US US11/080,487 patent/US7416794B2/en active Active
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- 2005-03-25 CN CNB2005100592999A patent/CN1333387C/en not_active Expired - Fee Related
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104364846A (en) * | 2012-12-06 | 2015-02-18 | 富士电机株式会社 | Perpendicular magnetic recording medium |
| CN104364846B (en) * | 2012-12-06 | 2019-11-05 | 富士电机株式会社 | Perpendicular magnetic recording medium |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4874526B2 (en) | 2012-02-15 |
| US20080090002A1 (en) | 2008-04-17 |
| US7416794B2 (en) | 2008-08-26 |
| CN1333387C (en) | 2007-08-22 |
| US20050214591A1 (en) | 2005-09-29 |
| JP2005276363A (en) | 2005-10-06 |
| SG115788A1 (en) | 2005-10-28 |
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