CN1670912A - 等离子体处理设备和等离子体处理方法 - Google Patents
等离子体处理设备和等离子体处理方法 Download PDFInfo
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- CN1670912A CN1670912A CNA2005100591479A CN200510059147A CN1670912A CN 1670912 A CN1670912 A CN 1670912A CN A2005100591479 A CNA2005100591479 A CN A2005100591479A CN 200510059147 A CN200510059147 A CN 200510059147A CN 1670912 A CN1670912 A CN 1670912A
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (33)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP081309/2004 | 2004-03-19 | ||
JP081308/2004 | 2004-03-19 | ||
JP2004081309A JP4390604B2 (ja) | 2004-03-19 | 2004-03-19 | プラズマ処理装置 |
JP2004081308A JP4469199B2 (ja) | 2004-03-19 | 2004-03-19 | プラズマ処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1670912A true CN1670912A (zh) | 2005-09-21 |
CN100552871C CN100552871C (zh) | 2009-10-21 |
Family
ID=34984850
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005100591479A Expired - Fee Related CN100552871C (zh) | 2004-03-19 | 2005-03-21 | 等离子体处理设备和等离子体处理方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8136479B2 (zh) |
KR (2) | KR101096950B1 (zh) |
CN (1) | CN100552871C (zh) |
TW (1) | TW200532060A (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101632329B (zh) * | 2007-06-11 | 2012-10-31 | 东京毅力科创株式会社 | 等离子体处理装置及处理方法 |
CN101847574B (zh) * | 2006-01-31 | 2012-11-07 | 东京毅力科创株式会社 | 基板处理装置和暴露于等离子体的部件 |
CN102782817A (zh) * | 2010-05-13 | 2012-11-14 | 松下电器产业株式会社 | 等离子体处理装置及方法 |
CN106892078A (zh) * | 2017-02-14 | 2017-06-27 | 中国航天空气动力技术研究院 | 一种用于临近空间飞艇减阻的等离子体流动控制装置 |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8136479B2 (en) * | 2004-03-19 | 2012-03-20 | Sharp Kabushiki Kaisha | Plasma treatment apparatus and plasma treatment method |
JP4878782B2 (ja) * | 2005-07-05 | 2012-02-15 | シャープ株式会社 | プラズマ処理装置及びプラズマ処理方法 |
KR101088876B1 (ko) * | 2007-06-11 | 2011-12-07 | 고쿠리츠다이가쿠호진 도호쿠다이가쿠 | 플라즈마 처리 장치, 급전 장치 및 플라즈마 처리 장치의 사용 방법 |
JP5213530B2 (ja) * | 2008-06-11 | 2013-06-19 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP5478058B2 (ja) * | 2008-12-09 | 2014-04-23 | 国立大学法人東北大学 | プラズマ処理装置 |
US9728416B2 (en) | 2011-09-30 | 2017-08-08 | Tokyo Electron Limited | Plasma tuning rods in microwave resonator plasma sources |
US9396955B2 (en) | 2011-09-30 | 2016-07-19 | Tokyo Electron Limited | Plasma tuning rods in microwave resonator processing systems |
JP5947138B2 (ja) * | 2012-07-25 | 2016-07-06 | 東京エレクトロン株式会社 | 成膜装置 |
KR101450592B1 (ko) * | 2013-01-17 | 2014-10-15 | 한국기초과학지원연구원 | 고밀도 플라즈마 발생장치 |
US9947515B2 (en) | 2013-03-14 | 2018-04-17 | Tokyo Electron Limited | Microwave surface-wave plasma device |
TWI568317B (zh) * | 2013-03-15 | 2017-01-21 | 東京威力科創股份有限公司 | 微波共振器處理系統中之電漿調整桿 |
KR101614028B1 (ko) * | 2013-05-27 | 2016-04-20 | 가부시키가이샤 아도테쿠 프라즈마 테쿠노로지 | 마이크로파 플라즈마 발생장치의 공동 공진기 |
US9941126B2 (en) | 2013-06-19 | 2018-04-10 | Tokyo Electron Limited | Microwave plasma device |
KR101475499B1 (ko) * | 2013-08-19 | 2014-12-23 | 한국기초과학지원연구원 | 고밀도 플라즈마 발생장치 |
US10424462B2 (en) | 2013-11-06 | 2019-09-24 | Tokyo Electron Limited | Multi-cell resonator microwave surface-wave plasma apparatus |
KR101681182B1 (ko) * | 2014-06-30 | 2016-12-02 | 세메스 주식회사 | 기판 처리 장치 |
KR102523730B1 (ko) * | 2016-11-14 | 2023-04-19 | 도쿄엘렉트론가부시키가이샤 | 이중 주파수 표면파 플라즈마 소스 |
CN111492720B (zh) * | 2017-12-18 | 2022-07-15 | 国立大学法人东海国立大学机构 | 等离子体产生装置 |
JP2019192606A (ja) * | 2018-04-27 | 2019-10-31 | 東京エレクトロン株式会社 | アンテナ装置、および、プラズマ処理装置 |
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US268274A (en) * | 1882-11-28 | Door-hanger | ||
US320248A (en) * | 1885-06-16 | Gael h | ||
JP2722070B2 (ja) | 1988-01-20 | 1998-03-04 | キヤノン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
US5359177A (en) * | 1990-11-14 | 1994-10-25 | Mitsubishi Denki Kabushiki Kaisha | Microwave plasma apparatus for generating a uniform plasma |
JP2765255B2 (ja) * | 1991-03-28 | 1998-06-11 | 三菱電機株式会社 | ホーンアンテナ |
US5234526A (en) * | 1991-05-24 | 1993-08-10 | Lam Research Corporation | Window for microwave plasma processing device |
KR0156011B1 (ko) | 1991-08-12 | 1998-12-01 | 이노우에 아키라 | 플라즈마 처리장치 및 방법 |
DE69306007T2 (de) * | 1992-01-30 | 1997-05-22 | Hitachi Ltd | Verfahren und Vorrichtung zur Plasmaerzeugung und Verfahren zur Halbleiter-Bearbeitung |
JP2570090B2 (ja) * | 1992-10-08 | 1997-01-08 | 日本電気株式会社 | ドライエッチング装置 |
DE69524671T2 (de) * | 1994-06-14 | 2002-08-14 | Sumitomo Metal Ind | Mikrowellenplasma-Bearbeitungssystem |
JP2701775B2 (ja) * | 1995-03-17 | 1998-01-21 | 日本電気株式会社 | プラズマ処理装置 |
US5698036A (en) * | 1995-05-26 | 1997-12-16 | Tokyo Electron Limited | Plasma processing apparatus |
JP2857090B2 (ja) | 1995-10-30 | 1999-02-10 | 株式会社東芝 | マイクロ波励起プラズマ処理装置 |
US5955382A (en) * | 1995-10-30 | 1999-09-21 | Kabushiki Kaisha Toshiba | Microwave excitation plasma processing apparatus and microwave excitation plasma processing method |
DE19600223A1 (de) * | 1996-01-05 | 1997-07-17 | Ralf Dr Dipl Phys Spitzl | Vorrichtung zur Erzeugung von Plasmen mittels Mikrowellen |
JP2921499B2 (ja) * | 1996-07-30 | 1999-07-19 | 日本電気株式会社 | プラズマ処理装置 |
US5874706A (en) * | 1996-09-26 | 1999-02-23 | Tokyo Electron Limited | Microwave plasma processing apparatus using a hybrid microwave having two different modes of oscillation or branched microwaves forming a concentric electric field |
JP2925535B2 (ja) | 1997-05-22 | 1999-07-28 | キヤノン株式会社 | 環状導波路を有するマイクロ波供給器及びそれを備えたプラズマ処理装置及び処理方法 |
TW385623B (en) * | 1997-10-20 | 2000-03-21 | Sumitomo Metal Ind | Apparatus and method for microwave plasma process |
JP2000312045A (ja) * | 1999-02-26 | 2000-11-07 | Tadahiro Omi | レーザ発振装置、露光装置及びデバイスの製造方法 |
JP3668079B2 (ja) | 1999-05-31 | 2005-07-06 | 忠弘 大見 | プラズマプロセス装置 |
US6222170B1 (en) * | 1999-08-24 | 2001-04-24 | Ut-Battelle, Llc | Apparatus and method for microwave processing of materials using field-perturbing tool |
US6652709B1 (en) * | 1999-11-02 | 2003-11-25 | Canon Kabushiki Kaisha | Plasma processing apparatus having circular waveguide, and plasma processing method |
JP2001203097A (ja) * | 2000-01-17 | 2001-07-27 | Canon Inc | プラズマ密度計測装置および方法並びにこれを利用したプラズマ処理装置および方法 |
TW497367B (en) * | 2000-03-30 | 2002-08-01 | Tokyo Electron Ltd | Plasma processing apparatus |
US6527909B2 (en) * | 2000-04-27 | 2003-03-04 | Tokyo Electron Limited | Plasma processing apparatus |
JP3872650B2 (ja) * | 2000-09-06 | 2007-01-24 | 東京エレクトロン株式会社 | プラズマ処理装置及び方法 |
JP2002280196A (ja) | 2001-03-15 | 2002-09-27 | Micro Denshi Kk | マイクロ波を利用したプラズマ発生装置 |
JP3689354B2 (ja) * | 2001-08-06 | 2005-08-31 | シャープ株式会社 | プラズマプロセス装置 |
KR100626192B1 (ko) * | 2001-09-27 | 2006-09-21 | 동경 엘렉트론 주식회사 | 전자계 공급 장치 및 플라즈마 처리 장치 |
JP2004153240A (ja) * | 2002-10-09 | 2004-05-27 | Advanced Lcd Technologies Development Center Co Ltd | プラズマ処理装置 |
JP2004200390A (ja) | 2002-12-18 | 2004-07-15 | Advanced Lcd Technologies Development Center Co Ltd | プラズマ処理装置 |
TW200415726A (en) * | 2002-12-05 | 2004-08-16 | Adv Lcd Tech Dev Ct Co Ltd | Plasma processing apparatus and plasma processing method |
US6998565B2 (en) * | 2003-01-30 | 2006-02-14 | Rohm Co., Ltd. | Plasma processing apparatus |
US7582569B2 (en) * | 2004-03-10 | 2009-09-01 | Tokyo Electron Limited | Distributor and distributing method, plasma processing system and method, and process for fabricating LCD |
US8136479B2 (en) * | 2004-03-19 | 2012-03-20 | Sharp Kabushiki Kaisha | Plasma treatment apparatus and plasma treatment method |
US20080099447A1 (en) * | 2006-10-06 | 2008-05-01 | Makoto Ando | Plasma processing apparatus and plasma processing method |
-
2005
- 2005-03-17 US US11/081,528 patent/US8136479B2/en not_active Expired - Fee Related
- 2005-03-17 TW TW094108265A patent/TW200532060A/zh unknown
- 2005-03-17 KR KR1020050022285A patent/KR101096950B1/ko not_active IP Right Cessation
- 2005-03-21 CN CNB2005100591479A patent/CN100552871C/zh not_active Expired - Fee Related
-
2011
- 2011-07-01 KR KR1020110065522A patent/KR101115996B1/ko not_active IP Right Cessation
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101847574B (zh) * | 2006-01-31 | 2012-11-07 | 东京毅力科创株式会社 | 基板处理装置和暴露于等离子体的部件 |
CN101632329B (zh) * | 2007-06-11 | 2012-10-31 | 东京毅力科创株式会社 | 等离子体处理装置及处理方法 |
CN102782817A (zh) * | 2010-05-13 | 2012-11-14 | 松下电器产业株式会社 | 等离子体处理装置及方法 |
CN102782817B (zh) * | 2010-05-13 | 2015-04-22 | 松下电器产业株式会社 | 等离子体处理装置及方法 |
CN106892078A (zh) * | 2017-02-14 | 2017-06-27 | 中国航天空气动力技术研究院 | 一种用于临近空间飞艇减阻的等离子体流动控制装置 |
CN106892078B (zh) * | 2017-02-14 | 2019-11-29 | 中国航天空气动力技术研究院 | 一种用于临近空间飞艇减阻的等离子体流动控制装置 |
Also Published As
Publication number | Publication date |
---|---|
US8136479B2 (en) | 2012-03-20 |
KR101096950B1 (ko) | 2011-12-20 |
CN100552871C (zh) | 2009-10-21 |
KR20110093964A (ko) | 2011-08-19 |
KR20060043769A (ko) | 2006-05-15 |
KR101115996B1 (ko) | 2012-02-21 |
TW200532060A (en) | 2005-10-01 |
US20050205016A1 (en) | 2005-09-22 |
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