CN1612312A - 一种离子布植制程的监控方法 - Google Patents
一种离子布植制程的监控方法 Download PDFInfo
- Publication number
- CN1612312A CN1612312A CN 200310108324 CN200310108324A CN1612312A CN 1612312 A CN1612312 A CN 1612312A CN 200310108324 CN200310108324 CN 200310108324 CN 200310108324 A CN200310108324 A CN 200310108324A CN 1612312 A CN1612312 A CN 1612312A
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- CN
- China
- Prior art keywords
- impurity
- energy
- low
- implantation
- ion implantation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 88
- 238000012544 monitoring process Methods 0.000 title claims abstract description 28
- 239000012535 impurity Substances 0.000 claims abstract description 37
- 238000005468 ion implantation Methods 0.000 claims abstract description 35
- 238000002513 implantation Methods 0.000 claims abstract description 22
- 238000005496 tempering Methods 0.000 claims abstract description 13
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims abstract description 6
- 230000000873 masking effect Effects 0.000 claims abstract description 6
- 150000002500 ions Chemical class 0.000 claims description 28
- 238000005259 measurement Methods 0.000 claims description 25
- 238000012360 testing method Methods 0.000 claims description 17
- 239000000523 sample Substances 0.000 claims description 6
- 230000003287 optical effect Effects 0.000 claims description 5
- 238000002310 reflectometry Methods 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims description 2
- 239000007943 implant Substances 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 239000011574 phosphorus Substances 0.000 claims description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical group [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 abstract 1
- 238000000137 annealing Methods 0.000 description 10
- 239000002019 doping agent Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000012861 aquazol Substances 0.000 description 3
- 229920006187 aquazol Polymers 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 238000001994 activation Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- -1 junction depth Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Images
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Abstract
Description
Dose | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 | 16 | 17 | 18 | 19 | 20 | 21 | 22 | 23 | 24 | |
PEOX(350) | 90% | D | D | D | D | ||||||||||||||||||||
100% | D | D | D | D | |||||||||||||||||||||
110% | D | D | D | D | |||||||||||||||||||||
PETEOS(1000) | 90% | D | D | D | D | ||||||||||||||||||||
100% | D | D | D | D | |||||||||||||||||||||
110% | D | D | D | D | |||||||||||||||||||||
1100RTA30S | D | D | D | D | D | D | D | D | D | D | D | D | |||||||||||||
1050RTA30S | D | D | D | D | D | D | D | D | D | D | D | D |
Dose | Mean | Std. | Sens. | Mean | Std. | Sens. |
PEOX(350A) | 1100RTA30S | 1050RTA30S | ||||
9.00E+14 | 163.34 | 0.375 | 1.2362 | 207.65 | 0.647 | 1.3118 |
1.00E+15 | 145.37 | 0.344 | 183.57 | 0.530 | ||
1.10E+15 | 131.71 | 0.350 | 0.9397 | 167.84 | 0.416 | 0.8569 |
PETEOS(1000A) | 1100RTA30S | 1050RTA30S | ||||
9.00E+14 | 167.99 | 0.689 | 1.2270 | 213.97 | 0.457 | 1.3416 |
1.00E+15 | 149.63 | 0.427 | 188.66 | 0.447 | ||
1.10E+15 | 136.07 | 0.464 | 0.9062 | 170.48 | 0.389 | 0.9636 |
Claims (23)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2003101083249A CN100392839C (zh) | 2003-10-31 | 2003-10-31 | 一种离子布植制程的监控方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2003101083249A CN100392839C (zh) | 2003-10-31 | 2003-10-31 | 一种离子布植制程的监控方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1612312A true CN1612312A (zh) | 2005-05-04 |
CN100392839C CN100392839C (zh) | 2008-06-04 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CNB2003101083249A Expired - Lifetime CN100392839C (zh) | 2003-10-31 | 2003-10-31 | 一种离子布植制程的监控方法 |
Country Status (1)
Country | Link |
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CN (1) | CN100392839C (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103050360A (zh) * | 2012-12-28 | 2013-04-17 | 昆山工研院新型平板显示技术中心有限公司 | 监测离子注入机均匀性与稳定性的方法及其使用的治具 |
CN103441069A (zh) * | 2013-08-02 | 2013-12-11 | 上海华力微电子有限公司 | 改善有源区损伤的方法 |
CN103839858A (zh) * | 2014-03-17 | 2014-06-04 | 上海华虹宏力半导体制造有限公司 | 离子注入机的工艺能力的监控方法和离子注入方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH087824A (ja) * | 1994-06-16 | 1996-01-12 | Fujitsu Ltd | イオン注入装置及び半導体装置の製造方法及びイオンビーム制御方法 |
KR0172275B1 (ko) * | 1995-06-02 | 1999-02-01 | 김주용 | 플래쉬 이이피롬 셀의 접합부 형성방법 |
US5861632A (en) * | 1997-08-05 | 1999-01-19 | Advanced Micro Devices, Inc. | Method for monitoring the performance of an ion implanter using reusable wafers |
KR100253099B1 (ko) * | 1997-12-26 | 2000-04-15 | 윤종용 | 광열 기술을 이용한 이온 주입 샘플의 평가 방법 및 그를 위한프로그램을 저장한 기록매체 |
CN1206725C (zh) * | 2002-12-27 | 2005-06-15 | 中国科学院上海微***与信息技术研究所 | 剂量-能量优化注氧隔离技术制备图形化绝缘体上的硅材料 |
-
2003
- 2003-10-31 CN CNB2003101083249A patent/CN100392839C/zh not_active Expired - Lifetime
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103050360A (zh) * | 2012-12-28 | 2013-04-17 | 昆山工研院新型平板显示技术中心有限公司 | 监测离子注入机均匀性与稳定性的方法及其使用的治具 |
CN103441069A (zh) * | 2013-08-02 | 2013-12-11 | 上海华力微电子有限公司 | 改善有源区损伤的方法 |
CN103441069B (zh) * | 2013-08-02 | 2016-01-27 | 上海华力微电子有限公司 | 改善有源区损伤的方法 |
CN103839858A (zh) * | 2014-03-17 | 2014-06-04 | 上海华虹宏力半导体制造有限公司 | 离子注入机的工艺能力的监控方法和离子注入方法 |
CN103839858B (zh) * | 2014-03-17 | 2017-06-16 | 上海华虹宏力半导体制造有限公司 | 离子注入机的工艺能力的监控方法和离子注入方法 |
Also Published As
Publication number | Publication date |
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CN100392839C (zh) | 2008-06-04 |
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Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Effective date: 20111205 |
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Effective date of registration: 20111205 Address after: 201203 Shanghai Zhangjiang Road, Zhangjiang High Tech Park of Pudong New Area No. 18 Co-patentee after: Semiconductor Manufacturing International (Beijing) Corp. Patentee after: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) Corp. Address before: 201203 Shanghai Zhangjiang Road, Zhangjiang High Tech Park of Pudong New Area No. 18 Patentee before: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) Corp. |
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Granted publication date: 20080604 |
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