CN1591884A - 固态象传感装置的制造方法 - Google Patents
固态象传感装置的制造方法 Download PDFInfo
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- CN1591884A CN1591884A CNA2004100593179A CN200410059317A CN1591884A CN 1591884 A CN1591884 A CN 1591884A CN A2004100593179 A CNA2004100593179 A CN A2004100593179A CN 200410059317 A CN200410059317 A CN 200410059317A CN 1591884 A CN1591884 A CN 1591884A
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- 238000004519 manufacturing process Methods 0.000 title claims description 64
- 239000000758 substrate Substances 0.000 claims abstract description 312
- 239000000463 material Substances 0.000 claims abstract description 96
- 229920005989 resin Polymers 0.000 claims abstract description 39
- 239000011347 resin Substances 0.000 claims abstract description 39
- 238000009826 distribution Methods 0.000 claims description 241
- 238000005520 cutting process Methods 0.000 claims description 61
- 238000007789 sealing Methods 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 28
- 238000003836 solid-state method Methods 0.000 claims description 14
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 235000008495 Chrysanthemum leucanthemum Nutrition 0.000 claims description 2
- 244000217433 Melampodium divaricatum Species 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims 2
- 241000218202 Coptis Species 0.000 claims 1
- 235000002991 Coptis groenlandica Nutrition 0.000 claims 1
- 238000007772 electroless plating Methods 0.000 claims 1
- 238000007639 printing Methods 0.000 description 28
- 238000009434 installation Methods 0.000 description 20
- 239000010931 gold Substances 0.000 description 16
- 239000004065 semiconductor Substances 0.000 description 14
- 238000005452 bending Methods 0.000 description 13
- 239000007769 metal material Substances 0.000 description 12
- 230000003287 optical effect Effects 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 239000004020 conductor Substances 0.000 description 7
- 230000002950 deficient Effects 0.000 description 7
- 230000008878 coupling Effects 0.000 description 6
- 238000010168 coupling process Methods 0.000 description 6
- 238000005859 coupling reaction Methods 0.000 description 6
- 238000005868 electrolysis reaction Methods 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 238000011109 contamination Methods 0.000 description 5
- 238000001723 curing Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 238000005266 casting Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 241000406668 Loxodonta cyclotis Species 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 239000012634 fragment Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002118 epoxides Chemical class 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 238000011068 loading method Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- 206010027146 Melanoderma Diseases 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 210000002469 basement membrane Anatomy 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000011002 quantification Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000010079 rubber tapping Methods 0.000 description 1
- 230000001953 sensory effect Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000008400 supply water Substances 0.000 description 1
- KKEYFWRCBNTPAC-UHFFFAOYSA-L terephthalate(2-) Chemical compound [O-]C(=O)C1=CC=C(C([O-])=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-L 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
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- H01L24/02—Bonding areas ; Manufacturing methods related thereto
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/03—Manufacturing methods
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01—ELECTRIC ELEMENTS
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/50—Constructional details
- H04N23/54—Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/50—Constructional details
- H04N23/55—Optical parts specially adapted for electronic image sensors; Mounting thereof
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/57—Mechanical or electrical details of cameras or camera modules specially adapted for being embedded in other devices
-
- H—ELECTRICITY
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- H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
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- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
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- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
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- H01L2224/13001—Core members of the bump connector
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- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13144—Gold [Au] as principal constituent
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- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/4809—Loop shape
- H01L2224/48095—Kinked
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2224/48477—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding)
- H01L2224/48478—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) the connecting portion being a wedge bond, i.e. wedge on pre-ball
- H01L2224/4848—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) the connecting portion being a wedge bond, i.e. wedge on pre-ball outside the semiconductor or solid-state body
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Abstract
传感器芯片和其内容纳传感器芯片的透镜架被安装在布线基片的一个表面,而其内容纳透镜的透镜握持器与透镜架耦合。在布线基片的后表面上,安装一个逻辑芯片,一个存贮器芯片和一无源部件,它们用一种密封树脂加以密封。传感器芯片的电极焊盘通过连线被电连接到布线基片表面的电极上,但在布线基片表面的电极上还形成一个钮状凸块,而此钮状凸块与接合线接合。在布线基片的表面上,用一种各向异性导电膜和一种粘结剂,粘结一柔性基片。当要制造一个相机组件时,布线基片的表面侧是在布线基片的后表面侧被装配好以后再装配的。
Description
技术领域
本发明涉及固态象传感装置的制造方法,具体地讲,涉及用于如移动电话这类移动通信装置的固态象传感装置以及能够有效地用于该制造方法的技术。
背景技术
固态象传感装置是一种光电转换装置,它利用象素的排列将从象上发出的光信号转变为电信号,在固态象传感装置的基片的主表面上,装有象传感元件,其光传感表面向上。在这些象传感元件的上方,由下至上顺序地安装一个滤波器和一个透镜,它们用一个框体来支持。
日本公布的未审查专利申请No.2000-78122叙述这样的技术,即将CCD安装在第一半导体组件的后表面,该组件包括一个数字信号处理器DSP之类的器件以处理CCD的电信号,以及一个第二半导体组件被安装在第一半导体组件的后表面,该组件包括对应CCD部位内的一个腔体,在腔体的上部装有一个透镜。
另外,日本公布的未审查专利申请No.2003-78077叙述这样的技术,即将CCD安装在第一半导体组件的后表面,该组件包括一个DSP之类的器件以处理CCD的电信号,一个在其上部包括一透镜的座架被安装并覆盖在CCD上,以及一个第二半导体组件和后表面芯片部件被安装在第一半导体组件的后表面。
另外,日本公布的未审查专利申请No.2003-32557叙述这样的技术,即在电子学部件和DSP被安装在布线基片的后表面以后,进行模制防护并形成平的模制防护层,之后,在布线基片的前表面上安装固态象传感元件,并用导线连接的方法将这些固态象传感元件和接合焊盘连接起来。
发明内容
本发明的发明人通过研究已经证实如下结果。
一固态象传感装置用了如象滤波器和透镜这样的光学部件。如果外来物掉到这些部件上,则通过该固态象传感装置显示的象中可以发生某个缺陷。因而,固态象传感装置对外来物的进入是非常敏感的,并且其制造成品率很容易因此而下降。
另外在近年来,对固态象传感装置,减小包括厚度在内尺寸的要求愈来愈高。然而,当尺寸被减小时,电子学部件安装区域也随之减小,从而象接合线的连接缺陷这样的毛病是容易产生的。这种毛病将减小固态象传感装置的制造成品率。
因而本发明的一个目的是提供一种固态象传感装置,它能够改进其制造成品率以及提供制造该固态象传感装置的一种方法。
本发明上述和其他的目标及其创新的特点将从本说明书及其附图的叙述变得清晰可见。
在本说明书中公布的本发明的主要创新将归结如下:
本发明的固态象传感装置是用一种各向异性的导电膜和一种粘结材料将一个柔性基片连接到一个安装象传感元件的布线基片来形成的。
另外,本发明的固态象传感装置也是用将电连接安装象传感元件的布线基片主表面极和象传感元件电极的接合线连接到布线基片主表面电极上形成的凸块来形成的。
另外,本发明的固态象传感装置也是用在象传感元件和透镜之间,离开透镜比离开传感元件较近的位置放置一个滤波器来形成的。
另外,本发明的固态象传感装置也是用首先装配布线基片的***部件安装表面,然后装配反面的光学部件安装表面来形成的。
在本发明的固态象传感装置的制造方法中,在布线基片安装象传感元件表面反面的主表面上安装了电子学部件之后,形成密封树脂区,接着对密封树脂区形成一槽。
另外,在本发明的固态象传感装置的制造方法中,安装象传感元件的布线基片用干性切割的方法加以切割。
另外,在本发明的固态象传感装置的制造方法中,一种粘结材料通过一个掩膜被选择性地涂在一个框体的连接表面上,而这个框体被连接到布线基片上,并覆盖安装在布线基片上的象传感元件。
本说明书中公布的本发明主要创新的效果将简述如下:
固态象传感装置的制造成品率能够通过用一种各向异性导电膜和一种粘结材料将一柔性基片连结到安装象传感元件的布线基片而得到改善。
另外,固态象传感装置的制造成品率能够通过将电连接安装象传感元件的布线基片主表面电极和象传感元件电极的接合线连接到在布线基片主表面电极上形成的凸块而得到改善。
另外,固态象传感装置的制造成品率能够通过在象传感元件和透镜之间,离开透镜比离开传感元件较近的位置放置一个滤波器而得到改善。
另外,固态象传感装置的制造成品率能够用首先装配布线基片的***部件安装表面,然后,在反面装配光学部件安装表面而得到改善。
另外,固态象传感装置的制造成品率能够用在布线基片安装象传感元件表面的反面的主表面上安装了电子学部件之后,形成密封树脂区,接着对密封树脂区形成一槽而得到改善。
另外,固态象传感装置的制造成品率能够用干性切割的方法切割安装象传感元件的布线基片来得到改善。
另外,固态象传感装置的制造成品率能够用一种粘结材料,通过一个掩膜,选择性地涂在框体的连接表面上,然后将这框体连接到布线基片并覆盖安装在布线基片上的象传感元件来得到改善。
附图说明
图1是说明作为本发明的一个实施方案的相机组件结构的一张截面图。
图2是作为本发明实施方案的相机组件在制造步骤下的一张总平面图。
图3是在图2的制造步骤下,基本部分的一张侧视图。
图4是在图3步骤之后接着的制造步骤下,相机组件基本部分的一张侧视图。
图5是在图4的制造步骤下的一张总平面图。
图6是说明被应力所弯曲的布线基片状况的一张示意图。
图7是在图4步骤之后接着的制造步骤下,相机组件基本部分的一张侧视图。
图8是在图7的制造步骤下的一张总平面图。
图9是在图7步骤之后接着的制造步骤下,相机组件基本部分的一张侧视图。
图10是在图9步骤之后接着的制造步骤下,照相机组件基本部分的一张侧视图。
图11是作为一个比较的例子,说明在传感器芯片和布线基片之间连线步骤的一张简图。
图12是说明接合线(bonding wire)被部分地剥离情况的一张示意图。
图13是说明在作为本发明实施方案的相机组件中,在传感器芯片和布线基片之间导线连接步骤的一张简图。
图14是说明在作为本发明实施方案的照相机组件中,在传感器芯片和布线基片之间导线连接步骤的一张简图。
图15是透镜架的一张顶视图。
图16是透镜架的一张底视图。
图17是透镜架的一张侧视图。
图18是说明将透镜架安装在布线基片上情况的一张总平面图。
图19是说明将透镜架安装在布线基片上的情况的一张基本部分的平面图。
图20是说明将透镜架安装在布线基片上的情况的一张局部剖开的侧视图。
图21是说明透镜架涂以粘结材料以与布线基片粘结这一步骤的简图。
图22是说明将一掩膜置于透镜架夹具(jig)上的情况的一张基本部分的平面图。
图23是图22的基本部分的一张截面图。
图24是一张示意截面图以描述将粘结材料涂在透镜架上的步骤。
图25是一张示意截面图以描述将粘结材料涂在透镜架上的步骤。
图26是描述将涂以粘结材料的透镜架粘结到布线基片上这一步骤的简图。
图27是描述将涂以粘结材料的透镜架粘结到布线基片上这一步骤的简图。
图28是在图27步骤之后接着的制造步骤下,相机组件基本部分的一张侧视图。
图29是在图28步骤之后接着的制造步骤下,相机组件基本部分的一张侧视图。
图30是在图29步骤之后接着的制造步骤下,相机组件的一张侧视图。
图31是描述将柔性基片粘结到布线基片上这一步骤的一张简图。
图32是描述将柔性基片粘结到布线基片上这一步骤的一张简图。
图33是在图30步骤之后接着的制造步骤下,相机组件的一张侧视图。
图34是描述本发明另一个实施方案的相机组件的一张简图。
具体实施方式
下面将参照附图详述本发明的优选实施方案。在所有的图中具有相同功能的相同的部件用相同的数字表示,以避免冗长的描述。在以下的叙述中,相同的或相似的部分除非特殊需要而不重复叙述。
另外,用于描述优选实施方案的图可能包括影线区,即使它们是平面图,以使其阅读更加容易。
下面将参照附图叙述本发明的固态象传感装置以及制造该装置的方法。本发明的固态象传感装置涉及用于,例如,移动电话,电视电话,PC相机,PDA(个人数字助手:移动信息终端),光学鼠标,门电话,监视相机,指纹识别装置,玩具之类的象输入部件的相机组件。
在本实施方案中,叙述一个将本发明应用于对应于CIF(CommonImmediate Format)的具有1.1×105象素CMOS(互补金属氧化物半导体)传感器型相机组件的例子。
图1是一张截面图,给出作为本发明一个实施方案的固态象传感装置的一种结构,例如,一种相机组件(固态象传感组件)1。
如图1所示,本实施方案的相机组件1包括一个布线基片(电路基片,安装基片,多层布线基片)2,一个传感器芯片(象传感元件,固态象传感元件,半导体象传感元件)3,它作为一个用作光学传感器的半导体芯片安装在布线基片的一个表面29上(光学部件安装表面)。一个透镜架(框体)4连接(粘结)到布线基片2以在其内容纳传感器芯片3,与透镜架4配合的透镜握持器(透镜握持部分,lens Assy)5,在透镜握持器5内握持的或安置的透镜(光学透镜)6,安装在布线基片2的后表面2b(***部件安装表面)上的,作为进行逻辑运算的半导体芯片的逻辑芯片7,作为存储用半导体芯片的存储芯片8,无源部件(无源元件)9,以及在布线基片2后表面2b上形成的,覆盖在逻辑芯片7,存储器芯片8和无源部件9上的密封树脂(密封部分,密封树脂部分)10。
布线基片2有一个将例如一个由树脂材料层(例如玻璃环氧***树脂材料层组成的绝缘层和一个布线层(传导层)迭合而形成的多层布线结构。安装在布线基片2表面2a上的传感器芯片3的电极焊盘接合焊盘通过连线11被电连接到布线基片2表面2a上形成的电极12,而安装在布线基片2后表面2b,而它是在表面2a另一侧的主表面,上的逻辑芯片7的电极焊盘(接合焊盘)以及存储器芯片8的电极焊盘(接合焊盘)8a通过连线13被电连接到在布线基片2后表面2b上形成的电极14。接合线11,13是用例如金(Au)形成的。无源部件9通过如象焊剂那样的导电连接材料15被电连接到布线基片2后表面2b上形成的电极14。在这个实施方案中,如以后将叙述的那样,在布线基片2表面2a的电极12上形成金钮状凸块(在图1中未示出),而接合线是与钮状凸块相连接的。
按照需要,传感器芯片3,逻辑芯片7,存贮器芯片8和无源部件9通过接合线11,13,在布线基片2表面2a和后表面2b上或其内形成的导电层(导电图样),或者在布线基片2上形成的穿透孔(没有示出)内的导体而被电连接。
传感器芯片3被安装在布线基片2的表面2a上,并使形成(MOS象传感器电路的表面(光传感表面,光传感元件形成表面)面向上。在传感器芯片3上形成的CMOS象传感器电路是用CMOS工艺过程形成的,而该工艺过程在半导体器件制造步骤中是被普遍使用的。该CMOS象传感电路包括一个传感器阵列(光传感元件区)以及一个模拟电路以处理从传感器阵列得到的电信号。被位于传感器芯片3上方的透镜6所会聚的光入射到在传感器芯片3表面上的传感器阵列。在这个传感器阵列中,沿着传感器芯片3的主表面的纵向和横向,规则地安置许多光传感元件。每一个光传感元件是一个形成CMOS象传感电路象素的区域并且有光-电转换功能以将入射光信号转换为电信号,作为这种光传感元件,可以用,例如,光电二极管或光电晶体管。在传感器芯片3的主表面的外周边,沿着外周边形成许多电极焊盘3a。该电极焊盘3a是传感器芯片3的CMOS象传感器电路的引出电极并通过连线11被电连接到布线基片2的电极12和布线上。
安装在布线基片2后表面上的逻辑芯片7,存储器芯片8和无源部件9主要是形成***的电子学部件以控制从传感器芯片3获得电信号的过程以及控制传感器芯片3的CMOS象传感电路的操作。例如,逻辑芯片7包括一个运算电路以处理数字信号,如象DSP(数字信号处理器),它具有对从传感器芯片3送出的电信号进行高速处理的功能。例如一个在存储器芯片上形成非-易失性存储器电路,如象EEPROM(电可擦除可编程序只读存储器)。该无源部件9是一个无源元件,如象一个电阻元件或一个电容元件。作为一个无源部件,可以用一个象芯片电阻和芯片电容这样的芯片部件。
在布线基片2后表面2b上形成的密封树脂10用例如一种热固化(thermosetting)的树脂材料来形成,并且它可以包括一种填料。逻辑芯片7,存储器芯片8,无源部件9和接合线13被密封树脂10的密封所保护。
透镜架4和透镜握持器5是用树脂材料或塑料(绝缘材料)所组成,如象PBT(聚乙烯对苯二酸酯,PolyButhylene Terephthalate)。镜架4被连接在布线基片2的前表面2a上以覆盖传感器芯片3,而作为透镜架4腿部底表面的粘结表面4b用粘结材料被粘结(放置)在布线基片2的表面2a上。在透镜架4的头部,透镜握持器5被紧靠透镜架4头部的孔径安装。透镜握持器5下部的外壁和透镜架4头部的内壁有螺纹,通过旋转透镜握持器5能使透镜握持器与这些螺纹啮合,将一部分透镜握持器5***透镜架4头部的孔径中以使透镜握持器5与透镜架4耦合,并且用涂在耦合部外周边上的粘结材料使透镜握持器5固定。
在透镜架4内,有一分隔板4c以分隔出一个上室和下室,而一个IR滤波器(IR玻璃滤波器)16被置于或被握持在该分隔板4c的一个孔径上,该红外滤波器16可以给以只通过可见光而不能通过大于某一个光确定波长的不需要的红外幅射的功能。该红外滤波器16被置于传感器芯片3和透镜6之间,因而相机组件的外来光线先被透镜6所会聚再通过IR滤波器16幅射至传感器芯片3。透镜6用一个例如,用铜材料组成的背压装置(夹部件)17来固定或握持在透镜握持器5内部。
一个柔性基片(柔性布线基片)21被粘结在透镜架4外侧布线基片2的表面2a上。该柔性基片21是在由,例如,聚酰亚胺或聚酯之类材料组成的高度柔性基膜(很容易弯曲)(绝缘层)上形成一布线图样(导体图样)所组成。该柔性基片通过一种各向异性导电膜(ACF)22被连接(粘结,bond)到布线基片2的表面2a,并用一种粘结材料(bondingmaterial)23与布线基片2连接(粘结)。该粘结材料23由,例如,紫外线固化型(ultraviolet-setting)粘结材料(UV粘结剂)组成。形成柔性基片21,将各向异性导电膜22从布线基片2侧壁(侧表面)2b延伸到被粘结到布线基片2一侧上的主表面。在各向异性导电膜22上形成的布线图样(未示出)通过在向向异性导电膜22中导电颗粒被电连接到布线基片2的表面4b的终端部分(金属终端部分,连接终端,连接器)24。按照需要,此终端部分24通过在表面2a,后表面2b上,或在布线基片2内部的导电层(导体图样),或在布线基片上形成的在穿透孔中的导体被电连接到布线基片2表面2a的电极12上和其后表面2b的电极14上。也即,该终端部分24通过布线基片2的布线被电连接到在相机组件1内的电路并作为布线基片2的一个外部终端。因而在柔性作为布线基片2的一个外部终端。因而在柔性基片21的端部形成的连接器25通过柔性基片21的布线图样(未示出)被电连接到布线基片2的终端部分24,从而作为相机组件1的外部终端(外部连接终端)。
接着,将叙述本实施方案的固态象传感装置的制造步骤。图2是本实施方案的固态象传感装置,也即一个相机组件1,在制造步骤下的一张总平面图。图3是同一固态象传感装置的基本部分的一张侧视图。图4是在图3的步骤后接着的制造步骤下,相机组件1基本部分的一张侧视图。图5是在对应于图4的制造步骤下一张总平面图。沿着图2中箭头记号XA表示的方向平视得到的布线基片2c基本部分的侧视图对应于图3,而沿着图5中箭头记号XA表示的方向平视得到的布线基片2c基本部分的侧视图对应于图4。
首先,如图2和图3中所示,准备好布线基片(布线基片母板)2c。布线基片2c是布线基片2的母板。该布线基片2c在以后将叙述的切割步骤中被切割,而每一个被切割下来作为一个产品区30(基片区)的布线基片对应于相机组件1的布线基片2。布线基片2c有这样的结构,即许多形成一个相机组件1的产品区(基片区)被安置成阵列的形式上。该布线基片2c有一种多层布线结构,它将一个由例如树脂材料层(例如,玻璃环氧***树脂材料层组成的绝缘层和一布线层(导电层)迭合起来形成的。这个布线基片2c可以用,例如,一种减方法(subtractive method)形成。另外,终端部分24是在布线基片2c的表面2a和后表面2b上形成导电部分一起形成的,而为了简化图形没有示出终端12,14。另外,在布线基片2c向前表面2a(光学***部件安装表面)和后表面2b(***部件安装表面)靠近四个边的区域形成许多平的矩形导体图形32。
在每一个产品区30中,无源部件9通过一种导电连接材料15,如象焊剂(图3中未示出)被安装(装载)在布线基片2c的后表面(***部件安装表面)2b上。安装在每一个产品区30的无源部件9的种类和数目可以根据不同的设计而不同。之后,在每一个产品区30中,逻辑芯片7和存储器芯片8通过一种单元片(die)粘结材料(未示出)被安装(装载)至布线基片2c的后表面2b。逻辑芯片7和存储器芯片8被安装在每一个产品区30内,但在图2和图3的每一个产品区30中,逻辑芯片7和存储器芯片8被集成为一个半导体芯片,以简化图形。
接着每一个产品区30的逻辑芯片7和存储器芯片8(的电极焊盘7a,8a),在导线连接步骤中,通过接合线13,被电连接到布线基片2c的后表面2b(的电极14)上。
接着,如图4和图5的所示,进行浇铸步骤(mold step)(例如,同时浇铸步骤)以在布线基片2c的后表面2b上形成密封树脂10以覆盖逻辑芯片7,存储器芯片8,无源部件9和接合线13。该密封树脂10由,例如,热固化树脂材料形成的,也可以包括一种填充料。在本实施方案的要点中,该密封树脂被形成以同时密封许多产品区30上的电子学部件(这里是逻辑芯片7,存储器芯片8和无源部件9)。
当在布线基片2c的后表面2b上形成密封树脂10时,布线基片2c很容易被弯曲。尤其当密封树脂10以同时浇铸的方法在布线基片2c的后表面2b的整个部分(包括许多个产品区30的区域)上形成时,布线基片2c的弯曲很容易增加。图6是描述当在布线基片2c上形成密封树脂10时由于产生应力而引起布线基片2c弯曲的示意侧视图。如图6所示,布线基片大概会由于密封树脂在固化时的收缩所产生的应力而弯曲。
在本实施方案的要点中,布线基片2c的弯曲用以下步骤使之变平而缓解,图7和图8是在图4和图5步骤之后接着的制造步骤下,相机组件1的基本部分的侧视图(图7)和总平面图(图8)。
在密封树脂10如图4和图5所示被形成以后,用一切割刀(未示出)从上表面10a使密封树脂10受到半-切割,如图7和图8所示,以形成槽或切割槽31。从图7和图8可以明显地看到,这些切割槽31是在各个产品区之间形成的。也即,这些切割槽31是在后表面2b上(也即在密封树脂10的上表面10a上)沿着垂直和横向两个方向,以几乎是网格的形状形成的。在这种情况,为了防止该布线基片2c被完全切割成各个小块,进行半-切割,而不是对布线基片2c作完全切割,从而使切割槽31的底部还至少留下一部分布线基片没有被切割。当在切割槽的底部留下的布线基片厚度被设置在某一个值(例如约0.2mm),从而并不减小布线基片2c的强度,这就足够了。另外,在这个半-切割的步骤中,也可以引进湿切割的方法,其中进行切割时对切刀供以水。另外,基片2c上的导体图形32可以用于半-切割的对准(目视记号)。
当密封树脂10在布线基片2c的后表面2b上形成时,布线基片2c很容易弯曲,特别当密封树脂10以同时浇铸方法在布线基片2c后表面包括产品区30的整个部分上形成时,该布线基片2c很容易弯曲得很严重。在本实施方案的要点中,布线基片2c的弯曲用密封树脂10上形成切割槽31来减小(缓解),从而布线基片2c能进一步变平。如果切割槽31的底部没有达到布线基片2c(也即切割槽31的深度小于密封树脂的厚度),则布线基片2c能够由于减小布线基片的弯曲而更加平坦。然而,当切割槽31的底部达到布线基片2c(也即,切割槽31的深度大于密封树脂的厚度),因为布线基片2c的弯曲能够被减小(缓解)以及布线基片2c能够更加平坦,因而是更可取的。另外,让切割槽形成如图8所示的几乎是网格的形状是更加可取的,因为这时布线基片2c的弯曲可以在布线基片2c的几乎整个部分是均匀的。
在本实施方案的要点中,布线基片2c的弯曲或扭曲能用形成切割槽31来减小和变平。如果布线基片2c是弯曲和扭曲的,在后面将叙述的将传感器芯片3安装在布线基片2的表面2a上以后,在连接连线11的步骤中,在某些情况下,接合线11就不能成功地连接。而在本实施方案的要点中,因为用形成切割槽31,通过弯曲和扭曲的减小,布线基片能够变平,接合线11的结合性能够被改善。因而,相机组件1的制造成品率就能被改善。另外,因为布线基片2c被进一步变平,就能防止当将透镜架粘结到布线基片2c时,在透镜架4和布线基片2c之间隙缝的产生,这将在后面叙述。相应地,外来物通过在布线基片2c(布线基片2)和透镜架4之间的隙缝进入透镜架就能被防止,以及外来物对传感器芯片3和IR滤波器16的附着也能够被防止。因而相机组件1的成品率也能够被改善。
图9和图10是在图7的步骤后接着的制造步骤下,相机组件1基本部分的侧正视图。
在如上述的半-切割步骤以后,将布线基片2c如图9所示反过来放置以使在后表面2b反面的布线基片2c的前表面(光学***部件安装表面)2a作为主表面向上。之后,通过单元片粘结材料(未示出)将传感器芯片3在每一个产品区30内安装在布线基片2c的表面2a上。
接着,如图10所示,执行导线连结步骤,以通过接合线11电连接每一个产品区30的传感器芯片3(的电极焊盘3a)。
图11是一张简图(基本部分的截面图),以说明在传感器芯片3和布线基片2c之间,作为提供比较的例子的线接合步骤。而图12是一张示意图,说明当接合线脱开的情况。图13和图14是两张简图(基本部分的截面图)示出在本实施方案的要点中,在传感器3和布线基片2c之间的连线步骤。
如图11所示,让连接到连线线11的电极12在更靠近布线基片2c表面2a上传感器芯片3的区域内形成更为可取,这样就能通过减小从透镜架4的内壁4a到传感器芯片3的距离来减小在平面上透镜架4的尺寸。相应地,就能实现相机组件1尺寸的减小。然而,当电极在靠近布线基片2c表面2a上传感器芯片3的区域内形成时,连线11和电极12之间形成的夹角就尖锐(例如,变得更接近于垂直),因而对于接合线11的弯曲应力就变大。因而在接合线11和电极12之间的连接强度将可能减小。当传感器芯片3的厚度(在垂直于表面2a方向上布线基片2c的厚度)大时,这个现象就变得更加显著。另外,电板12是,例如,通过在铜膜上镀金(Au)来形成的。当用非-电解镀方法时,例如,当电极12的表面层是用非-电解Au镀膜形成时,在连线11和电极12之间的连结强度,由于电极12变得比较薄以及镀膜的强度比较低,可能会进一步降低。因而很可能发生连线11从电极12上剥落,如图12所示,从而使相机组件1的可靠性下降,导致其制造成品率的下降。这里,可以想到用电解电镀方法来形成电极12。然而在此情况下,为了要在布线基片2c上形成一电镀膜,需复杂地连上电镀连线,而且制造成本将要增加。
在本实施方案的要点中,如图13所示,在布线基片表面2a上形成的电极12上,形成一个用金(Au)组成的钮状凸块(凸块电极)12a。该钮状凸块12a能够在使用超声波时,将由金(Au)组成的接合线的端点压向电极12,然后再拉接合线使之断开来形成,例如,用一个形成接合线11的线接合装置。即使电极12的表面层是用非-电解镀膜,例如,非-电解Au镀膜形成的,因为比非-电解Au镀膜更厚的钮状凸块12a在非-电解Au镀膜上形成,而用超声波功率就可以促进Au-Au耦合,在钮状凸块12a和电极12之间的连结(耦合)强度可以被改善。另外,钮状凸块12a可以形成得比电极12更厚,以及它也可以用更高强度的金属来形成(例如高纯金(Au)。在形成钮状凸块12a以后用如图14中所示的形成钮状凸块12a相同的线接合装置,将传感器芯片3的电极焊盘3a通过接合线11连接到布线基片2c的电极12上形成的钮状凸块12a。在此情况下,首先将接合线11的一端连接到传感器芯片3的电极焊盘3a,再将接合线11的另一端连接到电极12上形成的钮状凸块12a。
在本实施方案的要点中,因为在电极12上形成钮状凸块12a,以及连线11被连接到该钮状凸块12a,连线11能够被连接到用高纯金属(金)组成的,比非-电解Au镀膜更厚的钮状凸块12a,在连线11和电极12(也即,钮状凸块12a)之间的连接强度能够增强。因而,接合线11从电极12(钮状凸块)上剥离,如图12所示,能够被抑止或防止。相应地,相机组件1的可靠性能够被改善,而其制造成品率也能被改善。另外,即使由接合线11和电极12之间形成的角度小(例如变得接近垂直),以及由于电极12在离传感器芯片3比较近的区域内形成或者用比较厚的传感器芯片3而使接合线11上弯曲应力变大,在接合线11和电极12(钮状凸块12a)之间的连接强度能够用将接合线11连接到在电极12上的钮状凸块12a而得到改善,而连结线11从电极12(钮状凸块12a)上剥离能够被抑止或防止。因而从透镜架4的内壁4a到传感器芯片3的距离能够被缩短。相应地,透镜架4在平面上的尺寸能够减小,从而相机组件1的尺寸能够减小。另外,比较厚的传感器芯片可以用来扩大传感器芯片3的选择可能性。
另外,如果电极12的表面层,钮状凸块12a和接合线11用相同材料,如象金,来形成,则是更可取的。这样,在电极12和钮状凸块12a之间,以及在钮状凸块12a和接合线11之间的连接强度能够进一步改善。
在传感器芯片3和布线基片2c之间的连线步骤之后,透镜架4在每一个产品区30内被安装和粘结在布线基片2c的表面2a上。图15是透镜架4的一张俯视图。图16是透镜架4的一张底视图。图17是透镜架4的一张侧视图。图18是一张总平面图,给出透镜架4被安装(粘结)在布线基片2c上时的状况。图19和图20是基本部分的一张平面图(图19)和一张透镜架4被安装在布线基片2c情况下局部剖开的侧视图(图20)。图20是沿着图18的箭头记号XA所指的方向平视,布线基片2c的基本部分的一张侧视图,也是沿着图19的箭头记号35所指的方向的一张侧视图,它对应于透镜架4已被安装(粘结)至图10结构的情况。图18中箭头记号XA的方向和图19箭头记号35的方向对应于对于基片2c的同一方向。
从图20可以清楚地看到,透镜架4被安装在布线基片2c的表面上,以在每一产品区30中的透镜架4内,包容传感器芯片3和接合线11。例如,透镜架4能够用一种热固化粘结材料粘结到布线基片上。在透镜架4内,装有IR滤波器,以使当透镜架粘结到布线基片上时,透镜架4位于传感器芯片上方。
图21是描述在透镜架4上涂以粘结材料以将它粘结到布线基片2c上这一步骤的简图。
如图21所示,透镜架4被置于透镜架夹具41的各个凹口41a中,该透镜架夹具41包括对应于透镜架4外部形状的许多凹口41a。在此情况下,透镜架4被装入凹口41a并让透镜架4的要和布线基片2c粘结的粘结表面4b向上放置,接着用真空吸附的方法让它暂时固定。之后,将一个掩膜42置于将透镜架4保持在凹口41a中的透镜架夹具41的表面上。
图22是在掩膜42被置于透镜架夹具41上的情况下,基本单元的一张平面图。图23是该基本单元的一张截面图。沿着图22线B-B的截面几乎对应于图23。
例如,掩膜42是用一种金属材料形成的,如图22和图23中所示,它包括作为平的金属区的一个掩膜区42a和一个印刷区(涂敷区)42b,其中形成掩膜区42a的平金属板,用例如腐蚀方法,来产生网孔状的图形,印刷区42b具有和透镜架4的粘结表面4b几乎对应的形状。
掩膜42的掩膜区42a是不包括孔的区域,掩膜42的印刷区42b包括一剩下的网状金属材料区42c。粘结材料通过印刷区42b的大量的小孔,也即在金属材料区42e之间的大量细小的间隙孔)42d,被涂到位于印刷区42b下方的透镜架4的粘结表面4b上。掩膜42是以约130μm的厚度形成的,而保持在印刷区42b中的网孔型金属材料区42c,以较掩膜更薄的厚度形成,例如约70μm的厚度。掩膜42的上表面43a(对着透镜架4一侧相反一侧的主表面)被设置成与保持在印刷区42b中的网状金属材料区42c的上表面44a在同一平面上,而掩膜42的下表面43b(对着透镜架一侧的主表面与保持在印刷区42b中的网状金属材料区42c的下表面44b不在同一平面上。在掩膜42的印刷区42b中,在下表面43b(44b)的一侧中形成一个凹区45(例如,约60μm)。
例如,能够从下表面43b的一侧,对于用以形成掩膜的金属板的印刷区42b,将该区域作为一个整体进行半-腐蚀以形成凹区45(例如,约60μm),并通过印刷区42b的选择性腐蚀,在印刷区42b中保留网状金属材料区42c并同时除去在印刷区42b中的其他部分(除了金属材料区42c以外的部分)。来形成掩膜42。
当将掩膜置于透镜架夹具41上时,该掩膜被这样的放置以实现透镜架4的粘结表面4b和掩膜42的印刷区42b的对准。在这以后,如图21中所示,予先确定数量的粘结材料46被安放在掩膜42上表面43a上,借助于挤压器47的移动,该粘结材料46被延展(挤压)并通过掩膜42选择性地涂到透镜架4的粘结表面4b上。
图24和和图25是描述透镜架4涂以粘结材料46的涂敷步骤的示意截面图。
如图24中所示,当用挤压器47来延展粘结材料46时,在掩膜42的上表面43a上放置的粘结材料借助挤压器被挤压以通过印刷区42b。在网状图样的印刷区42b中,粘结材料46被推以向下通过在金属材料区42c之间的精细孔隙(孔径)42d。也即,借助于挤压器47,被控制在掩膜42上移动的粘结材料46通过印刷区域42b的网孔状图样被附着到透镜架4的粘结表面4b上。
在透镜架4的粘结表面4b和印刷区42b的金属材料区42c之间存在一个对应于凹区45(例如,约60μm)的空间45a,而这个空间被填以粘结材料46。如图25所示,填充在该空间45a的粘结材料46,在将掩膜42从透镜架夹具41(透镜架4)拿走后,作为粘结材料层保持在透镜架4的粘结表面4b上。这样,在透镜架4的粘结表面4b上就涂上或印刷上了粘结材料46。而填充在印刷区42b的金属材料区42c之间的隙缝42d中的粘结材料46和掩膜42一起移去,并不附着于透镜架4的粘结表面4b。
涂在透镜架4的粘结表面4b上粘结材料层(粘结材料46)的厚度对应于空间45的厚度(沿着与掩膜42的上表面43a或下表面43b相垂直方向的厚度。也即,对应于掩膜42凹区45的厚度(在与掩膜42上表面43a或下表面43b相垂直方向的厚度)。因而涂在透镜架4的粘结表面4b上的粘结材料层(粘结材料46)的厚度可以通过调节掩膜42的凹区45的厚度来加以控制。因而粘结材料层(粘结材料46)可以以均匀的厚度在每一个透镜架4的粘结表面上形成。当在透镜架4的粘结表面4b上涂以太少量的粘结材料46时,在透镜架4和布线基片2c之间就可能发生粘结失败。另外,如果涂以太多的粘结材料时,粘结材料46在透镜架被粘结到布线基片2c时会附着到布线基片2c的终端部分24,从而在柔性基片21和终端部分24之间可能会产生电连接故障。然而,在本实施方案中,因为粘结材料层(粘结材料46)能够在透镜架4的粘结表面4b上以极高的可控制性以均匀厚度形成,因而在粘结和电连接中故障的发生可以被抑制和控制。因而相机组件的可靠性就能被改进而其制造成品率也能被改善。
如果在印刷区42b中没有网状金属材料区42c,而是在整个印刷区42b内形成一个开口,那么,与本发明的要点不同,就需要在印刷区42b外面的掩膜区42a和在印刷区42b内的掩膜区42a之间的一个耦合区,而粘结材料46不能涂到耦合区的下部。因而,在透镜架4的粘结表面4b中就出现没有涂上粘结材料46的区域。因而,当透镜架4被粘结到布线基片2c时,在透镜架4和布线基片2c之间就可能出现隙缝。如果在透镜架4和布线基片2c之间存在隙缝,外来物将进入透镜架4内部,导致外来物附着在传感器芯片3和IR滤波器16的可能性。在传感器芯片3上附着一个外来物,将在用相机组件拍摄和显示的象中产生一个黑点(黑点缺陷),而外来物附着在IR滤波器16上将在用相机组件拍摄和显示的象中产生一个沾污(模糊沾污缺陷)。因而,外来物进入透镜架4(外来物附着在传感器芯片3和IR滤波器16上)将降低相机组件的制造成品率。
在本实施方案的要点中,因为采用包括具有网状图形印刷区42b的掩膜42,并用挤压器47将粘结材料层印刷至透镜架4的粘结表面4b,就能够在透镜架4的粘结表面4b上均匀地形成粘结材料46的粘结材料层。因而,当透镜架4被粘结到布线基片2c上时,在透镜架4和布线基片2c之间的隙缝的产生就能被防止。相应地,外来物进入到透镜架4就能被防止,而外来物附着于传感器芯片3和IR滤波器16也能被抑制和防止。因而相机组件的可靠性能够被改善,其制造成品率也能被改善。另外用一种价格低的夹具能够将粘结材料46可靠地供给到透镜架4的粘结表面4b,因而制造成本也能被降低。
另外,如图23中所示,掩膜42的印刷区42b的宽度最好比透镜架4的粘结表面4b的宽度稍小一点。例如,透镜架4的粘结表面4b的宽度是约0.6到0.8mm,而掩膜42的印刷区42b的宽度小于透镜架4的粘结表面4b的宽度约100μm。因而,粘结材料46在透镜架4的粘结表面4b以外附着在透镜架4内壁或外壁的情况就能被防止。另外,粘结材料46最好用一种热固化粘结材料来形成。因而在掩膜42上的粘结材料46的固化就能被防止,从而改善可操作性。另外,由于掩膜42能够被重复地使用,制造成本也能被降低。
图26和图27是描述将涂以粘结材料46的透镜架4粘结到布线基片2c的粘结步骤的简图。
如前所述,在粘结材料46被涂(印刷)到透镜架4的粘结表面4b以后,透镜架4和布线基片2c的表面2a被粘在一起而该表面,如上所述,安装了传感器芯片3,并已经形成连线11。例如,将布线基片2c的表面2a压到被透镜架夹件41握持着并涂以粘结材料46的透镜架,如图26所示。当布线基片2c的表面2a被压向透镜架4的粘结表面时,进行热处理。因而,粘结材料46被固化而透镜架4被粘结(固定)到布线基片2c的表面2a上。在粘结材料46被固化后,和布线基片2c粘结在一起的透镜架被从透镜架夹具41移去并随后将布线基片2c倒过来放置。这样就得到如图27所示的结构。
图28和图29是在图27之后的制造步骤下,相机组件1的基本部分的侧视图。
在将透镜架4如前向所述那样粘结到布线基片2c以后,将一层保护膜(胶带)51贴在透镜架4的用来安装透镜握持器5的上部,以封住透镜架4上方的孔,如在图28中所示。保护膜51起着防止在后面的步骤中外来物从透镜架4的上部开口进入透镜架4具体讲,进入IR滤波器16的表面)的作用。
接着,将布线基片2c切割成各个产品区30,如图29所示。在这情况下,与图7和图8的半切割(半切)不同,该布线基片被完全切割(全切)。这样就能得到作为单个部件的相机组件1a(在制造步骤下的相机组件)。另外布线基片2c也被分进各个产品区30作为布线基片2。切割线位于相邻产品区30之间并且它和图7和图8的半切割步骤中的切割槽31(切割线)的位置几乎相同。另外,该切割最好从布线基片2c的表面2a的那一侧执行。另外,基片2c的导体图样32可以用于完全切割的对准(视觉标记)。
在布线基片22的切割(完全切割)步骤中,适宜用干性-切割,其中在切割步骤中,不向切割刀片提供水来进行切割。例如,可以用一种碳切割片(由碳构成的切割片)作为切割刀片。干性切割中热的影响可以用具有极小热阻的碳切割片进行干性切割来减小。当采用湿性切割时,也即进行切割时向切割刀片供应水,水容易通过透镜架4上方开孔处进入透镜架4内部,从而可能在IR滤波器16的表面产生水迹。在IR滤波器16的表面产生的水迹将在用相机组件1所拍摄和显示的象中引起沾污(模糊沾污缺陷)。因而,水进入透镜架4以及由于IR滤波器16的水迹而产生的沾污性缺陷能够用以干性切割方法进行完全切割来防止。因而,相机组件的可靠性可以被改进,以及其制造成品率也能被改善。另外,当对布线基片进行切割时所产生的切割碎片进入透镜架4,可以在保护膜51贴在透镜架4上部这样的条件下进行干性切割而得到防止。附着在布线基片2c透镜架4和密封树脂10周围的切割碎片能够用吹气的方法除去。
图30是在图29的步骤后接着的制造步骤下,相机组件的一张侧视图。
如图30中所示,在相机组件1a中的透镜架4的外侧,该柔性基片21被粘结到(连接到)布线基片2。在此情况下,该柔性基片21被粘结(连接)到布线基片2的表面2a的终端区24和接近该终端区的区域。
图31和图32是描述将柔性基片21粘结到布线基片2的粘结步骤的简图(侧视图)。
首先,将柔性基片21通过一各向异性导电膜22附着到布线基片2的表面2a。在此情况下,柔性基片21通过各向异性导电膜22被附着到布线基片2的表面2a,并且它们是以这样的方式被粘结或热粘结的,即在各向异性导电膜22的一个主表面被附着于柔性基片21后,使各向异性导电膜22的另一个主表面和包括布线基片2的表面2a的终端区24的区域相接触。例如,当柔性基片被压向布线基片2的同时,加热各向异性导电膜以使之固化。因而,该柔性基片21被粘结到布线基片2。该柔性基片21藉助固化的各向异性导电膜22就被粘结到布线基片2,而柔性基片21的布线图样(未示出)通过在各向异性导电膜22中的导电粒子,被电连接到布线基片2的表面2a上的终端区24。
当柔性基片21和布线基片2只用各向异性导电膜22来粘结,那么柔性基片21的抗张强度是比较小的。因而当柔性基片21被弯曲时,柔性基片21很可能从布线基片2或各向异性导电膜22剥离,如图31所示。这种情况将减小相机组件的可靠性,从而也减小制造成品率。
在本发明的要点中,在柔性基片21和布线基片2之间通过各向异性导电膜22粘结在一起以后,在布线基片2和柔性基片21之间的粘结被用涂上附加的粘结材料23而得到加强,如图32中所示。在此情况下,涂以或形成粘结材料23的范围从布线基片2的侧壁2d(包括密封树脂10的侧壁),越过各向异性导电膜22,一直延展到柔性基片21的主表面。也即,涂以或形成粘结材料的范围从柔性基片21没有和各向异性导电膜22相接触的部分(这里,没有和各向异性导电膜22相接触的部分21a在柔性基片21的正对布线基片2的一侧的主表面上)延伸到布线基片2的没有和各向异性导电膜22相接触的部分(这里,布线基片2的侧壁2d)。该粘结材料23被固化,以使布线基片2和柔性基片21通过粘结材料23沉积在一起。
在本发明的要点中,柔性基片21和布线基片2是通过各向异性导电膜22粘结在一起的,以及这些柔性基片21和布线基片2还用粘结材料23粘结在一起。也即,柔性基片21用各向异性导电膜22和粘结材料23粘结(连接)到布线基片2的。因而,柔性基片21的抗张强度能被相对提高,而当柔性基片21被弯曲时,从布线基片2的剥离就可以被抑制或防止。相应地,相机组件的可靠性可以被改善,而其制造成品率也能被改善。另外,当该相机组件1被用于一移动电话,因为柔性基片21经常地和反复地被弯曲,以本发明所述的粘结材料23来加强在柔性基片21和布线基片2之间的粘结是特别有效的。
另外也可以在用各向异性导电膜22在柔性基片21和布线基片2之间粘结以后,将透镜握器5安装到透镜架4,接着再以粘结材料23将柔性基片21和布线基片2粘结。在这种情况下,最好粘结材料23是用一种紫外-固化型粘结材料。在涂以粘结材料23后,粘结材料能够通过紫外线的照射来固化。因而就不再需要固化粘结材料23的加热步骤,因而由于热处理而引起的透镜握持器5内透镜6的形变就能被防止。
图33是在图30步骤后随后的制造步骤下相机组件1的一张侧视图。
如图33所示,在去掉保护膜以后透镜握持器被安装到透镜架4。如图1中所描述的那样,透镜6是装在透镜握持器5内。另外,因为透镜握持器5的下侧表面(外壁)和透镜架4上部的内壁具有螺纹,能够通过将透镜握持器的一部分***透镜架4上方的孔并使之转动来将透镜握持器5安装到透镜架4。之后,透镜6对于传感器芯片3的高度位置用聚焦方法加以调整。这种调整能够用旋转透镜握持器5来实现。在聚焦过程以后,透镜握持器5和透镜架4被涂以连接材料(未示出)。
如上所述,如本发明的要点那样的相机组件就能被制造出来(完成)。
在本发明的要点中,在先装配布线基片2的后表面2b侧之后,装配布线基片2的前表面2a侧。也即在布线基片2的后表面侧2b的***部分装配步骤(如图3所示的安装无源部件9,存储器芯片8和传感器芯片3和线连线步骤和图4中所示的形成密封树脂的步骤以及图7中所示的半-切割步骤)被首先执行之后,进行在布线基片2的表面2a侧的光学***装配步骤(如图9和图10中所示的安装传感器芯片3和连线步骤,如图20中所示的透镜架4的粘结步骤,如图28中所示的保护膜51的附着步骤,图29中所示的完全切割步骤,图30中所示的柔性基片21的粘结步骤,以及图33中所示的透镜握持器的安装步骤)。如果一个外来物质(灰尘之类的东西)被附着到布线基片2后表面2a侧的部件,例如附着到传感器芯片3,IR滤波器16和透镜6,将在同相机组件1所取得并显示的象中产生某个缺陷,从而可能减小相机组件1的成品率。在本发明的要点中,在布线基片的后表面2b侧***部分装配步骤中一个外来物引起的对布成基片2表面2a侧中的部件的影响能够被防止。而外来物对传感器芯片3,IR滤波器16和透镜6的附着可以通过光进行布线基片2的后表面2b侧***部分装配步骤,再进行布线基片2的表面2a侧对外来物的进入很敏感的光学***部件装配步骤,来减小。相应地,相机组件1的可靠性能被改善,而其成品率也能被改进。
另外,在本发明的要点中,在密封树脂10形成以后,进行半-切割以对密封树脂形成切割槽31,因而,布线基片2c的弯曲能够被缓解以及可以变平坦。作为其结果,连线11的连结性能够被改善。另外,当透镜架4被粘结到布线基片2c时,在透镜架4和布线基片2c之间隙缝的产生就能被防止,外来物进入透镜架4也能被防止。相应地,相机1的可靠性能被改善,其制造成品率也能被改进。
另外,在本发明的要点中,引入干切割来将布线基片2c用完全切割分成各个产品区30。因而水进入透镜架4就能被防止,因而在IR滤波器1b中水迹的产生也能被防止。因而,相机组件1的可靠性能够被改善,而其制造成品率也能被改善。
另外,在本发明的要点中,在布线基片表面2a上安装的传感器芯片3的电极焊盘3a通过接合线11被电连接到布线基片2的表面2a上形成的电极12。另外,布线基片2的表面2a的电极12上形成钮状凸块12a,而该钮状凸块12a与接合线11相连接。因而在接合线11和电极12之间的连接强度就能被提高,接合线11从电极12剥落就能被抑制或防止。相应地,相机组件1的可靠性能够被改善,其制造成品率也能被改善。另外,因为在接合线11和电极12之间的连接强度被提高,从透镜架4的内壁4a到传感器芯片3的距离就能被缩短,因而相机组件1的尺寸就能被减小。
另外,在本发明的要点中,将柔性基片21通过各内异性导电膜22粘结到布线基片2,并且柔性基片21和布线基片2还以粘结材料23粘结在一起。相应地,柔性基片21的切变强度能够被提高,而柔性基片21当它被弯曲时的剥离能够被抑制或防止。因而,相机组件1的可靠性能被改善,其制造成品率也能被改善。
另外,在本发明的要点中,当透镜架被涂以粘结材料46时,该粘结材料层是用含有网孔图样印刷区42b的掩膜42,以挤压器47印刷到透镜架4的粘结表面4b的。因为在透镜架4的粘结表面4b上可以均匀地形成粘结材料层,当透镜架4被粘结到布线基片2c时,在透镜架4和布线基片2c之间隙缝的产生能够被防止。因而,外来物进入透镜架4就能被防止,而外来物对传感器芯片3,IR滤波器16之类的附着也能被抑制或防止。相应地,相机组件1的可靠性能够被改善,其制造成品率也能被改善。
另外,当外来物进入透镜架4并附着在IR滤波器16的表面上时,就会在用相机组件1所得到和显示的象中产生一个缺陷。为了减小附着在IR滤波器16的外来物对象的影响,在IR滤波器16和传感器之间的距离(间隔)能够被设置得大于IR滤波器16和透镜6之间的距离。图34是描述本发明另一个实施方案的相机组件的一张简图。该相机组件在其他方面均和图1的相机组件1相同,只是在IR滤波器16,传感器3和透镜6之间的位置关系不同。为了简化该图,除了IR滤波器16,传感器3和透镜6以外的部分没有在此处示出。
在图34中,IR滤波器16被置于离开透镜6比离开传感器芯片3更近的位置。外来物(例如,由于布线基片2c的干性切割产生的切割碎片),即使这种外来物附着于IR滤波器16的表面,对于用相机组件1得到和显示的象的影响,能够通过将在IR滤波器16和传感器芯片3之间的距离(间隔)L1设置得大于在IR滤波器16和透镜6之间的距离(间隔)L2(L1>L2)而减小。相应地,半导体装置的制作成品率能够被改善。
本发明已基于其优选实施方案加以叙述,但本发明决不限于这些实施方案,它能在不偏离本发明的权利要求的范围内,作各种改变和修正。
在以上叙述中,本发明已经用于用一个CMOS象传感器的相机组件作为一个典型应用领域。但本发明决不限于这样一种应用并也能广泛应用于其他用,例如,-CCD(电荷耦合器件)象传感器的相机组件。
Claims (20)
1.一种制造固态象传感装置的方法,包括:
一布线基片;
在所述布线基片的主表面上安装的象传感元件;
一连接在所述布线基片的所述主表面上的框体,该框体覆盖所述象传感元件;以及
一柔性基片,它被用一种各向异性导电膜和一种粘结材料,在所述框体的外侧连接到所述布线基片。
2.按照权利要求1的固态象传感装置,其中所述粘结材料是一种紫外光固化型粘结材料。
3.按照权利要求1的固态象传感装置,其中所述柔性基片和所述布线基片通过所述各向异性导电膜连结,而所述粘结材料从所述柔性基片没有和所述各向异性导电膜接触的一个部分延伸到所述布线基片没有和所述各向异性导电膜接触的一个部分。
4.一种制造固态象传感装置的方法,包括:
一布线基片;
在所述布线基片的主表面上安装的象传感元件;
电连接所述象传感元件的电极和所述布线基片所述主表面的电极的接合线;以及
一连接在所述布线基片的所述主表面上的框体,该框体覆盖所述象传感元件和所述接合线,
其中所述接合线连接到在所述布线基片所述主表面的所述电极上形成的凸块上。
5.按照权利要求4的固态象传感装置,其中所述的凸块是一个钮状凸块。
6.按照权利要求4的固态象传感装置,其中所述布线基片所述主表面的所述电极的表面部分是用一种非电解镀膜形成的。
7.按照权利要求4的固态象传感装置,其中所述布线基片所述主表面的所述电极的表面部分是用一种金镀膜形成的,所述凸块是用金钮状凸块形成的,以及所述接合线是用金线形成的。
8.一种制造固体象传感装置的方法,包括:
一布线基片;
在所述布线基片的主表面上安装的象传感元件;
一连接在所述布线基片所述主表面上的框体,该框体覆盖所述象传感元件;
一安装至所述框体的透镜握持部分,以包含一个透镜;以及
安置在所述象传感元件和在所述框架中的所述透镜之间的一滤波器,
其中在所述滤波器和所述象传感元件之间的距离被设置成大于所述滤波器和所述透镜之间的距离。
9.一种制造固态象传感装置的方法,包括以下步骤:
(a)将电子学部件安装在布线基片的第一主表面上;
(b)形成一密封部分以密封所述布线基片的所述第一主表面上的所述电子学部件;
(c)在步骤(b)以后,在所述布线基片的所述第一主表面相反侧的第二主表面上,安装象传感元件;
(d)在步骤(b)以后,将一个框体连接在所述布线基片的所述第二主表面上,覆盖所述象传感元件;
(e)在步骤(d)以后,切割所述布线基片;以及
(f)在步骤(e)以后,将包含一个透镜的透镜握持部分安装到所述框体中。
10.按照权利要求9的制造固态像传感装置的方法,还包含以下步骤:
在所述步骤(d)之后但在所述步骤(e)之前,将一保护膜粘附到所述框体;以及
在所述步骤(e)之后但在所述步骤(f)之前,从所述框体除去所述保护膜。
11.一种制造固态象传感装置的方法,包括以下步骤:
(a)将电子学部件安装在一布线基片的第一主表面上;
(b)形成一个密封树脂部分以密封所述布线基片的所述第一主表面上的所述电子学部件;
(c)在所述步骤(b)以后,对所述密封树脂部分形成一个槽;以及
(d)在所述步骤(c)以后,将象传感元件安装在所述布线基片的所述第一主表面相反侧的第二主表面上。
12.按照权利要求11的制造固态象传感装置的方法,其中所述槽在所述步骤(c)中是从所述布线基片的所述第一主表面上以半-切割形成的。
13.按照权利要求11的制造固态象传感装置的方法,其中所述布线基片包括多个产品区,在所述步骤(b)中形成所述密封树脂部分以同时密封所述多个产品区中的所述电子学部件,而所述槽在所述步骤(c)中是在所述多个产品区之间形成的。
14.一种制造固态象传感装置的方法,包括以下步骤:
(a)将象传感元件安装在布线基片的一个主表面上;
(b)将一框体连接在所述布线基片的所述主表面上,覆盖所述象传感元件;以及
(c)用干性切割方法以切割所述布线基片。
15.按照权利要求14的制造固态象传感装置的方法,包含以下步骤:
在所述步骤(b)以后但在所述步骤(c)以前,将一保护膜附着到所述框体;以及
在所述步骤(c)中,在所述保护膜被附着到所述框体的条件下,切割所述布线基片。
16.按照权利要求14制造固态象传感装置的方法,
其中所述布线基片包括多个产品区,
其中所述象传感元件在所述步骤(a)中被安装在所述布线基片的每一个所述产品区,
其中在所述步骤(b)中,所述框体被连接到所述布线基片的每一个所述产品区,以及
其中所述布线基片在所述步骤(c)中被切割并被隔离进每一个产品区。
17.按照权利要求14制造固态象传感装置的方法,其中所述布线基片在步骤(c)中是用碳切刀来切割的。
18.一种制造固态象传感装置的方法,包括如下步骤:
(a)将象传感元件安装在布线基片的一个主表面上;
(b)用一种粘结材料通过掩膜选择性地涂覆框体的一个连接表面;
(c)通过所述粘结材料,将所述框体的所述连接表面连接到所述布线基片的所述主表面上,覆盖所述象传感元件。
19.按照权利要求18的制造固态象传感装置的方法,其中在所述掩膜上形成一个网孔图样区,而在所述步骤(b)中已经通过所述网孔图样区的所述粘结材料被粘附于所述框体的所述连接表面。
20.按照权利要求19的制造固态象传感装置的方法,其中在步骤(b)中,在所述掩膜上移动的粘结材料借助于挤压器,通过所述网孔图样区被粘附到所述框体的所述连接表面。
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