CN1554125A - 相变材料存储器装置 - Google Patents
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Abstract
一种可使用单一的、杯状相变材料(18)形成的相变材料存储器单元(10)。该杯状相变材料(18)的内部可使用热绝缘材料(22)填充。结果是,可通过该杯状相变材料(18)减少在一些实施例中的向上的热损失以及相变材料(18)和装置(10)的剩余部分之间的粘附问题。此外,阻挡层(20)可被设置在上部电极(28)和装置(10)的剩余部分之间,以减少一些实施例中从上部电极向相变材料(18)中的物质引入。可使用化学机械抛光以限定相变材料(18),减少一些实施例中的相变材料干法蚀刻的影响。
Description
技术领域
本发明主要涉及电子存储器,特别涉及使用相变材料的电子存储器。
背景技术
相变材料可显示出至少两种不同的状态。这些状态可被叫做非晶态和晶态。在这些状态之间的转变可被有选择地引发。由于非晶态一般显示出比晶态更高的电阻率,因此这些状态可进行区分。非晶态包括无序的原子结构。通常可使用任一种相变材料。然而在一些实施例中,薄膜硫族化物合金(chalcogenide alloy)可能是最适合的。
相变可被逆向诱发。因此,存储器可随温度变化由非晶态转变成晶态,此后又回复到非晶态,或反之亦然。实际上,每一存储器单元可被想成程序控制的电阻器,在高电阻状态和低电阻状态之间进行可逆转变。可通过电阻加热诱发相变。
在一些实施例中,存储器单元可具有多个状态。即由于可通过其电阻值区分每一状态,就有可能实现由电阻确定的多个状态,使得可以在单个单元中存储数据位。
已知有多种相变合金。通常,硫族化物合金含有一种或多种元素周期表第VI族的元素。最适合的一类合金是GeSbTe合金。
相变材料可通过绝缘体在通道或孔隙中成形。相变材料可与在孔隙各端部上的上部电极和下部电极相连接。
一个存在的问题是:绝缘体和相变材料之间的粘附性较差。这一问题的一个解决方案是:提供促进绝缘体和相变材料之间粘附性的界面层。通常,合适的界面层为导体如钛。
特别是,由于使用拉长的相变材料,因此增大了分离的可能性。不管后续工艺步骤中的热膨胀和收缩,使用柱状条带的相变材料对沿长条带的粘附性有要求。沿相变材料叠层自身的柱列,且在集成电路工艺流程中要求作为的集成的一部分的随后的薄膜沉积物中还存在累积应力。
另一种选择是,胶体层可位于绝缘体和相变材料之间。然而,胶体层可减削相变材料或增加处理成本。
现有相变存储器的另一个问题是通过存储器单元的向上的热损失。热损失越大,由于热量被用于诱发程序设计相变,因此要求的程序设计电流越大。
另一个问题是从上部电极向相变材料中这些物质的加入。物质加入可对相变材料的程序设计性质产生不利效果。
现有相变材料存储器的另一个问题是需要对相变材料进行干法蚀刻。相变材料叠层的干法蚀刻是一个复杂的过程。由此会遇到基蚀和凹腔外形的问题。
因此,需要改进可使用更多有利技术进行生产的相变存储器的设计。
附图说明
图1是根据本发明的一个实施例的放大横断面视图;
图2是图1中所示装置的横向放大横断面视图;
图3是图1和图2中所示实施例的顶部平面图;
图4是根据本发明的一个实施例的图1中所示构件的初始加工的放大横断面视图;
图5示出了根据本发明的一个实施例在图4中所示构件上的后续加工;
图6示出了根据本发明的一个实施例对图5中所示构件的后续加工;以及
图7示出了根据本发明的一个实施例对图6中所示实施例的后续加工。
具体实施方式
参见图1,相变型存储器单元10可在基底12上形成,在一个实施例中可为硅基底。一对下部电极14可在基底12上形成。该电极14可被绝缘体16分隔开。在下部电极14之上、下部电极14和顶部电极28之间可形成孔隙。该孔隙可包括覆盖有相似形状阻挡层20的渐尖的杯状相变材料18。可在阻挡层20和相变材料18的中央部分填入填充绝缘体22。蚀刻终止层24(etch stop layer)位于阻挡层26之下,而阻挡层26位于顶部电极28之下。
参见图2,顶部电极28沿两个邻近的孔隙延伸。这些孔隙可被绝缘体16分隔开。由孔隙限定的存储器单元在一些实施例中可大量分布在基底12上。如图3所示,每一电极28覆盖包括被绝缘体16分隔开的覆盖有蚀刻终止层24的元件14、18、20和22的多个孔隙。
根据本发明一个实施例的存储器单元10的成形技术可包括使用传统布线图案制作和沉积技术在基底12上初始形成下部电极14,如图4所示。任何传统技术可被用于形成电极14。该电极14可由多种导体包括钴的硅化物形成。
然后绝缘体16可被沉积在已形成图案的下部电极14上。在一个实施例中,绝缘体16可以是电绝缘体和热绝缘体。二氧化硅是一种适合的材料,在一个实施例中其厚度可为约50-1500埃。紧接着进行平面化处理,例如:化学机械抛光(CMP)以得到总体上和局部的平面度。若需要,随后可沉积CMP蚀刻终止层24。该终止层24可以是氮化硅或多晶硅,在一个实施例中其厚度为10-1000埃。
以下参见图5,由蚀刻终止层24限定的孔洞32容纳衬垫30。可使用传统技术形成该衬垫30,即沉积绝缘层并有选择地对下部电极14和蚀刻终止层24之间的一层进行各向异性干法蚀刻。衬垫30可由二氧化硅或氮化硅如Si3N4制成。在一个实施例中该衬垫30的厚度可在50-2000埃的范围内。
下面看图6,在一个实施例中相变层18、阻挡层20和填充绝缘体22可以连续的方式沉积在如图5所示的构件上。在一个实施例中,该相变材料18可以是以硫族化物为基的材料例如:Ge2Sb2Te5,厚度为50-1000埃。阻挡层20可由例如厚度在10-500埃范围内的例如钛、氮化钛或钛-钨合金制成。填充绝缘体22可以是任何具有低热导率和电导率的绝缘体。适当的填充绝缘体22材料的例子包括二氧化硅或氮化硅,例如该Si3N4的厚度为约500-10000埃。
最后看图7,化学机械抛光(CMP)除去了在蚀刻终止层24上的全部填充绝缘体22、阻挡层20和相变材料18。由此CMP限定了相变材料18的构件,而免去了在一个实施例中的干法蚀刻。如前面所述,使用干法蚀刻会使工艺流程复杂化且产生基蚀和凹腔外形的问题。此外,由于相变材料18被限定在封装的单一区域内,因此可大大减少或甚至消除,即使是暴露于随后的热应力之后,相变材料18和周围材料之间的粘附问题。
在相变材料18上安放绝缘体22减少了向上的热损失。热损失可导致需要更大的设计电流以获得相同的设计效果。
如图1所示,图7的构件可被覆盖有阻挡层26和顶部电极28。在一个实施例中,阻挡层26可以是厚度在10-500埃范围内的钛、氮化钛或钛-钨合金。在一个实施例中,顶部电极28可以是厚度在200-20000埃范围内的铜铝合金。在一些实施例中,阻挡层26的使用可减少从顶部电极28向相变材料18中引入物质。顶部电极28和阻挡层26可使用标准光刻和干法蚀刻技术形成图案,以得到如图1、2、和3所示的构件。
尽管通过有限数量的实施例对本发明进行了描述,本领域的技术人员意识到可对其中进行许多修改和变化。意图是在本发明的实质精神和范围内附加权利要求覆盖了所有这些修改和变化。
Claims (39)
1、一种方法包括:
限定一个单一开口;
在所述开口中形成杯状相变材料;以及
在该杯状相变材料中形成热绝缘材料。
2、根据权利要求1所述的方法包括形成电极和阻挡层,所述电极通过所述阻挡层与所述相变材料相连接。
3、根据权利要求1所述的方法包括形成与所述相变材料电连接的电极并使用阻挡层将所述电极中的物质与所述相变材料相隔离。
4、根据权利要求1所述的方法包括绝缘所述相变材料以减少向上的热损失。
5、根据权利要求1所述的方法包括使用平面化处理限定所述相变材料。
6、根据权利要求5所述的方法包括使用化学机械抛光技术限定所述相变材料。
7、根据权利要求1所述的方法包括在所述单一开口中限定侧壁衬垫。
8、根据权利要求7所述的方法包括在所述开口中限定电极。
9、根据权利要求8所述的方法包括使用所述侧壁衬垫限定所述相变材料的杯形形状。
10、一种存储器包括:
支承构件;
在所述支承构件上的绝缘体,所述绝缘体具有在所述绝缘体中限定的开口;
在所述开口中的杯状相变材料;以及
在所述杯状相变材料中的热绝缘材料。
11、根据权利要求10所述的存储器,其特征在于,所述热绝缘材料充满所述杯状相变材料。
12、根据权利要求10所述的存储器包括电极和在所述电极和所述相变材料之间的阻挡层,所述电极通过所述阻挡层与所述相变材料相连接。
13、根据权利要求10所述的存储器包括与该相变材料电连接的电极以将该电极中的物质与该相变材料相隔离。
14、根据权利要求10所述的存储器包括在该相变材料上的绝缘体以减少向上的热损失。
15、根据权利要求10所述的存储器,其特征在于,所述相变材料是单一的。
16、根据权利要求15所述的存储器包括在所述单一开口中的侧壁衬垫。
17、根据权利要求16所述的存储器包括在所述开口中的电极。
18、根据权利要求17所述的存储器,其特征在于,所述杯状相变材料在所述侧壁衬垫上形成。
19、根据权利要求10所述的存储器,其特征在于,该相变材料一般与该侧壁衬垫相平行。
20、一种方法包括:
限定相变材料;
在所述相变材料上形成电极;以及
将所述电极与所述相变材料相隔离。
21、根据权利要求20所述的方法包括在所述相变材料和所述电极之间加入阻挡层。
22、根据权利要求21所述的方法包括加入导体阻挡层。
23、根据权利要求22所述的方法包括形成所述氮化钛阻挡层。
24、一种存储器包括:
相变材料;
在所述相变材料上的电极;以及
在所述相变材料和所述电极之间的阻挡层。
25、根据权利要求24所述的存储器,其特征在于,所述阻挡层为导体层。
26、根据权利要求25所述的存储器,其特征在于,所述阻挡层包括钛。
27、根据权利要求24所述的存储器,其特征在于,所述阻挡层阻止了在所述电极中的物质进入所述相变材料。
28、一种方法包括:
限定在构件中的开口;
在所述开口内和在所述构件之上形成一层相变材料;以及
平面化处理所述相变材料。
29、根据权利要求28所述的方法包括化学机械抛光所述相变材料。
30、根据权利要求28所述的方法包括在所述开口中形成侧壁衬垫并然后沉积所述相变材料。
31、根据权利要求28所述的方法包括形成杯状相变材料。
32、根据权利要求31所述的方法包括使用绝缘体填满所述杯状相变材料。
33、一种存储器包括:
支承构件;
在所述支承构件中的开口;以及
在所述开口中的平面化的相变材料。
34、根据权利要求33所述的存储器,其特征在于,所述相变材料是杯状的。
35、根据权利要求34所述的存储器包括在所述杯状相变材料中的绝缘体。
36、根据权利要求33所述的存储器,其特征在于,所述相变材料被封装。
37、根据权利要求33所述的存储器,其特征在于,所述相变材料是单一的。
38、根据权利要求33所述的存储器包括与所述相变材料相连接的电极。
39、根据权利要求38所述的存储器包括在所述电极和所述材料之间的阻挡层。
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WO2015007108A1 (zh) * | 2013-07-19 | 2015-01-22 | 中国科学院上海微***与信息技术研究所 | 相变存储单元及其制备方法 |
CN105098071A (zh) * | 2015-07-08 | 2015-11-25 | 宁波时代全芯科技有限公司 | 制造相变化记忆体的方法 |
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KR100595450B1 (ko) | 2006-06-30 |
DE10297191B4 (de) | 2009-07-23 |
KR20040033017A (ko) | 2004-04-17 |
WO2003023875A3 (en) | 2004-03-18 |
DE10297191T5 (de) | 2004-10-07 |
US6586761B2 (en) | 2003-07-01 |
TW559915B (en) | 2003-11-01 |
US6908812B2 (en) | 2005-06-21 |
US20030201469A1 (en) | 2003-10-30 |
WO2003023875A2 (en) | 2003-03-20 |
US20030047762A1 (en) | 2003-03-13 |
CN100379046C (zh) | 2008-04-02 |
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