CN1525541A - Grid layer having no small embossment and making method thereof - Google Patents
Grid layer having no small embossment and making method thereof Download PDFInfo
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- CN1525541A CN1525541A CNA031064094A CN03106409A CN1525541A CN 1525541 A CN1525541 A CN 1525541A CN A031064094 A CNA031064094 A CN A031064094A CN 03106409 A CN03106409 A CN 03106409A CN 1525541 A CN1525541 A CN 1525541A
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Abstract
The invention is a kind of grid layer without small bulges and the manufacturing method. It forms single layer or several layers of pure aluminum layer in condition of high pressure and low power, and uses an aluminum with nitrogen to cover on it, in order to prevent the generation of small bulges, and it decreases the cost greatly.
Description
Technical field
The present invention relates to a kind of aluminum conductor layer, relate in particular to a kind of grid layer (hillock-free gate) and manufacture method thereof that does not have small embossment.
Background technology
In semiconductor technology, (molybdenum, Mo) or the material of chromium (Cr) during as grid layer process (gate process), yet expensive molybdenum or chromium metal can make whole technology cost high generally to select molybdenum for use.The abundantest metallic ore-the aluminium of content is not only obtained easily on the earth, and low price, generally is applied in the smithcraft more, if desire is used fine aluminium in the grid layer process, has the problem of surperficial small embossment (Hillock).
Select for use the advantage of fine aluminium to be: aluminium has low-resistance coefficient, and and substrate (substrate) between good tack (adhesion) is arranged, in etch process, also show preferable etching characteristic (etchingcharacteristics).Yet, use fusing point (melting point) than the low fine aluminium of common metal as the grid layer, still have its shortcoming.Please refer to Figure 1A, it illustrates the schematic diagram of metal deposition in glass substrate.Deposit metal on the glass substrate 102 at (about 150 ℃) under the lower temperature earlier, so crystal grain (crystal particle) 104 is arranged on the glass substrate 102, then have crystal boundary (grainboundary) 106 to form between crystal grain 104 and the crystal grain 104.Certainly, actual crystal grain can't be upright as Figure 1A, represents with neat square crystal grain for convenience of description at this.Then, carry out tempering (anneal), increase the vibration of crystal grain by heat energy that heat provided, the arrangement of crystal grain atom is reformed, crystal grain is able to be undertaken by the disappearance of defective crystallization again (recrystalline).Through the crystal grain of crystallization again, its internal stress (inner stress) will sharply descend because of the reduction of mistake row and defect concentration.If the temperature of tempering continues to raise again, when the crystal grain that crystallization stage is formed has enough energy to overcome intercrystalline surface energy (surface energy), crystal grain will begin to grow up in the process that consumes little crystal grain, form bigger crystal grain, and the crystal boundary of little crystal grain is eliminated, at this moment, the internal stress of crystal grain will further reduce.
When using fine aluminium as the metal of grid layer, the problem that has small embossment produces.Please refer to Figure 1B, it illustrates aluminium after the tempering in the schematic diagram of glass substrate.The high temperature of drawing process, make aluminium grain 104 and glass substrate 102 all produce thermal expansion (thermal expansion), but the thermal coefficient of expansion of aluminium is greater than the thermal coefficient of expansion of glass, make aluminium grain 104 produce great compression (compressive stress), because aluminium is attached on the glass substrate 102, so the aluminium atom can and form small embossment (hillock) 110 above it along crystal boundary 106 growth.This small embossment that forms on metal level 110, this small embossment can seriously cause the element short circuit and damage.
According to above-mentioned, how in general semiconductor technology or grid layer process, use aluminium reducing cost, but the generation that can prevent making small embossment (hillock) is dealer's one important research target in LCD.
Summary of the invention
In view of this, purpose of the present invention is exactly to be to provide a kind of grid layer and manufacture method thereof that does not have small embossment, under high pressure, lower powered film forming (Film Formation) condition, form the single or multiple lift aluminum layer, and cover thereon with a nitrogenous aluminium lamination, avoiding producing uneven small embossment (hillock), and significantly reduce manufacturing cost.
According to purpose of the present invention, a kind of grid layer (Hillock-free gate) that does not have small embossment is proposed, it forms two-layer at least aluminium lamination on a substrate, the grid layer comprises: be formed at the aluminum layer on the substrate, an and nitrogenous aluminium lamination that is formed at this aluminum layer top, wherein, the nitrogenous aluminium lamination that is positioned at the top can suppress the aluminum layer of below, and the generation of effectively anti-system small embossment.
According to purpose of the present invention, the another kind of manufacture method of the grid layer of small embossment that do not have is proposed, in order to avoid producing uneven projection on the aluminum metal layer surface, wherein, the grid layer is positioned on the substrate, at least comprise two-layer aluminium lamination, manufacture method comprises step: (a) under one first pressure and one first film forming power, form an aluminum layer on substrate, wherein, the scope of first pressure is between 0.5Pa～4Pa, and the scope of the first film forming power is about 0.1～10w/cm
2Between; And, form a nitrogenous aluminium lamination in the aluminum layer top (b) under one second pressure and under the one second film forming power, wherein, the thickness scope of nitrogenous aluminium lamination is between 100～1000 .
For above-mentioned purpose of the present invention, feature and advantage can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.
Description of drawings
Figure 1A shows the schematic diagram of metal deposition in glass substrate;
Figure 1B shows that aluminium after the tempering is in the schematic diagram of glass substrate;
Fig. 2 shows the schematic diagram according to two layers of aluminium lamination of first embodiment of the invention; And
Fig. 3 shows the schematic diagram according to three layers of aluminium lamination of second embodiment of the invention.
Description of reference numerals in the accompanying drawing is as follows:
102,202,302: substrate
104: crystal grain (crystal particle)
106: crystal boundary (grain boundary)
110: small embossment (hillock)
204,304a, 304b: aluminum layer
206,306: nitrogenous aluminium lamination
Embodiment
Technical characterstic of the present invention is, forms a nitrogenous aluminium lamination above aluminum layer, to suppress the generation of small embossment (hillock).Wherein, aluminum layer can be a single or multiple lift, and forms under high pressure, lower powered film forming (Film Formation) condition.
Please refer to Fig. 2, it illustrates the schematic diagram according to two layers of aluminium lamination of first embodiment of the invention.On substrate 202, form aluminum layer 204 with high pressure, lower powered membrance casting condition, wherein, pressure limit and preferably is 1Pa between 0.5Pa～4Pa; And the scope of film forming power is about 0.1～10w/cm
2Between.Then, forming a nitrogenous aluminium lamination 206 above aluminum layer 204, for example is aluminium nitride (aluminum nitride, AlN) or aluminum oxynitride (aluminum oxide nitride, AlON), its thickness scope is between 100～1000 , and preferably between 300～800 .Then do not have particular restriction as for the membrance casting condition that forms nitrogenous aluminium lamination 206, can adopt general one-tenth film pressure such as 0.3Pa.Be positioned at the nitrogenous aluminium lamination 206 of aluminum layer 204 tops, can effectively suppress the formation of small embossment.
Please refer to Fig. 3, it illustrates the schematic diagram according to three layers of aluminium lamination of second embodiment of the invention.On substrate 302, form the first aluminum layer 304a with high pressure, lower powered membrance casting condition, wherein, pressure limit and preferably is 1Pa between 0.5Pa～4Pa; And the scope of film forming power is about 0.1～10w/cm
2Between.Then, above the first aluminum layer 304a, form the second aluminum layer 304b.Then, forming a nitrogenous aluminium lamination 306 again in second aluminum layer 304b top, for example is aluminium nitride (AlN) or aluminum oxynitride (AlON), and its thickness scope is between 100～1000 , and preferably between 300～800 .Then do not have particular restriction as for the membrance casting condition that forms nitrogenous aluminium lamination 306, can adopt general one-tenth film pressure such as 0.3Pa.Be positioned at the nitrogenous aluminium lamination 306 of the top, can effectively suppress the formation of small embossment.
Though, be that example is done explanation with two-layer aluminum layer among second embodiment, but the present invention also can be three, four, five layers or more multi-layered aluminum layer not as limit, as long as the aluminium lamination below the top covers with nitrogenous aluminium lamination can reach the effect that suppresses small embossment.Even when practical application, aluminum layer of the present invention place also can add other element according to need, but on cost, there is not aluminum layer low.
In addition, for the multilayer aluminum layer, if the aluminum layer particle near substrate 402 is more little more, and arrangement is thin more, and the aluminum layer particle on upper strata is big more more, and arrangement is close more, then to suppressing small embossment good addition effect is arranged also.Yet the present invention is not restricted to this, as long as nitrogenous aluminium lamination is arranged above multilayer aluminium, and cooperates the lower powered condition of high pressure to get final product.
Whether do a series of experiments with next at aluminium lamination structure of the present invention, and through 350 ℃ of temperatures, tempering time is after 1 hour, observing the aluminium lamination top with scanning electron microscopy (Scanning electron microscope) has small embossment to form.Part of test results as shown in Table 1.
Table one
| Become film pressure (Pa) | Thickness () | Film forming power (w/cm 2) | Whether produce small embossment after the tempering |
| ????0.3 | ????2000 | ????6.5 | Have |
| ????4 | ????2000 | ????6.5 | A little |
| ????4 | ????2000 | ????2 | Do not have |
| ????4 | ????1000+1000 | ????2+6.5 | Do not have |
| ????4 | ????1000+1000 | ????4+6.5 | Do not have |
Experiment one (control group)
On substrate, to become film pressure 0.3Pa, film forming sputtering power (Sputtering power) (hereinafter to be referred as film forming power) 6.5w/cm
2The deposited monolayers fine aluminium; Then, deposit nitrogenous aluminium lamination more thereon.Through 350 ℃ of temperatures, tempering time is after 1 hour, and whether observe the aluminium lamination top with sweep electron microscope (Scanningelectron microscope) has small embossment to form.
Observed result shows: under the situation of low filming pressure, high film forming power, can produce small embossment.
Experiment two (control groups)
On substrate, to become film pressure 4Pa, film forming power 6.5w/cm
2The deposited monolayers fine aluminium; Then, deposit nitrogenous aluminium lamination more thereon.Through 350 ℃ of temperatures, whether tempering time had small embossment to form with sem observation aluminium lamination top after 1 hour.
Observed result shows: though become film pressure to be increased to 4Pa, film forming power does not reduce, and therefore still has the small embossment of a little to produce.
Experiment three
On substrate, to become film pressure 4Pa, film forming power 2.0w/cm
2The deposited monolayers fine aluminium; Then, deposit nitrogenous aluminium lamination more thereon.Through 350 ℃ of temperatures, whether tempering time had small embossment to form with sem observation aluminium lamination top after 1 hour.
Observed result shows: become film pressure to improve, under the situation that film forming power also reduces, small embossment can be suppressed fully and can't produce.
Experiment four
On substrate, to become film pressure 4Pa, film forming power 2.0w/cm
2Deposition ground floor fine aluminium is again to become film pressure 4Pa, film forming power 6.5w/cm
2Deposition second layer fine aluminium; The last nitrogenous aluminium lamination side thereon that deposits again.Through 350 ℃ of temperatures, whether tempering time had small embossment to form with sem observation aluminium lamination top after 1 hour.
Observed result shows: under height became film pressure, under deposit multilayer fine aluminium and the cumulative situation of film forming power, small embossment also can be suppressed fully and can't produce.
Experiment five
On substrate, to become film pressure 4Pa, film forming power 4.0w/cm
2Deposition ground floor fine aluminium is again to become film pressure 4Pa, film forming power 6.5w/cm
2Deposition second layer fine aluminium; The last nitrogenous aluminium lamination side thereon that deposits again.Through 350 ℃ of temperatures, whether tempering time had small embossment to form with sem observation aluminium lamination top after 1 hour.
Observed result shows: become film pressure deposit multilayer fine aluminium at height, and the film forming power of ground floor fine aluminium is tested the film forming power (2.0w/cm in four
2) want high, small embossment still can be suppressed fully and can't be produced.
By The above results as can be known, single or multiple lift fine aluminium of the present invention covers with a nitrogenous aluminium lamination again, can effectively prevent the generation of kick really.
Disclosed grid layer and the manufacture method thereof that does not have small embossment of the above embodiment of the present invention, its advantage is: cost tradition uses materials such as molybdenum or chromium significantly to reduce, and technology is simple and easy, and can effectively prevent the generation of kick, therefore, can not cause the unevenness of his layer of subsequent deposition.
In sum; though the present invention with preferred embodiment openly as above; but it is not in order to limit the present invention; without departing from the spirit and scope of the present invention; those skilled in the art can do various changes and retouching, so protection scope of the present invention should be as the criterion so that claims are determined.
Claims (17)
1. grid layer that does not have small embossment, it forms two-layer at least aluminium lamination on a substrate, and this grid layer comprises:
One aluminum layer is formed on this substrate, and this aluminum layer is made up of a plurality of fine aluminium crystal grain; And
One nitrogenous aluminium lamination is formed at the top of this aluminum layer, and this nitrogenous aluminium lamination is made up of a plurality of aluminium grain;
Wherein, this nitrogenous aluminium lamination that is positioned at the top can suppress this aluminum layer of below, and prevents the generation of small embossment.
2. grid layer as claimed in claim 1, wherein this nitrogenous aluminium lamination is aln layer (AlN).
3. grid layer as claimed in claim 1, wherein this nitrogenous aluminium lamination is an oxygen containing aln layer (AlON).
4. manufacture method that does not have the grid layer of small embossment, in order to avoid producing uneven projection, wherein, this grid layer is positioned on the substrate, comprises two-layer aluminium lamination at least, and this manufacture method comprises the following steps:
(a) under one first pressure and one first film forming power, on this substrate, form an aluminum layer, wherein, the scope of this first pressure is between 0.5Pa～4Pa, and the scope of this first film forming power is about 0.1～10w/cm
2Between; And
(b) under one second pressure and under the one second film forming power, form a nitrogenous aluminium lamination in this aluminum layer top, wherein, the thickness scope of the aluminium lamination that this is nitrogenous is between 100～1000 .
5. manufacture method as claimed in claim 4, wherein this first pressure is preferably about 1Pa.
6. manufacture method as claimed in claim 4, wherein this second pressure is about 0.3Pa.
7. manufacture method as claimed in claim 4, wherein the thickness scope of this nitrogenous aluminium lamination is preferably between 300～800 .
8. manufacture method that does not have the grid layer of small embossment, in order to avoid producing uneven projection, wherein, this grid layer is positioned on the substrate, comprises a N layer aluminum layer and a nitrogenous aluminium lamination, and N is the positive integer greater than 1, and this manufacture method comprises the following steps:
(a) under one first pressure and one first film forming power, on this substrate, form one first aluminum layer, and setting i value is 1;
(b) the i value is added 1;
(c) under i pressure and an i film forming power, on this i-1 aluminum layer, form an i aluminum layer;
(d) the i value during less than N repeating step (b) to (c), till the i value equals N; And
(e) on this N aluminum layer, form this nitrogenous aluminium lamination,
Wherein, the scope of this first pressure and this i pressure is between 0.5Pa～4Pa, and the scope of this first film forming power and this i film forming power is about 0.1～10w/cm
2Between, and the thickness scope of this nitrogenous aluminium lamination is between 100～1000 .
9. manufacture method as claimed in claim 8, wherein this first pressure is preferably about 1Pa.
10. manufacture method as claimed in claim 8, the pressure that wherein forms this nitrogenous aluminium lamination is about 0.3Pa.
11. manufacture method as claimed in claim 8, wherein the thickness scope of this nitrogenous aluminium lamination is preferably between 300～800 .
12. manufacture method as claimed in claim 8, wherein this nitrogenous aluminium lamination is aln layer (AlN).
13. a grid layer that does not have small embossment, it forms the aluminium lamination of N+1 layer on a substrate, and N is the positive integer greater than 1, and this grid layer comprises:
N layer aluminum layer is formed on this substrate, and those aluminum layers are made up of a plurality of fine aluminium crystal grain; And
One nitrogenous aluminium lamination is formed at the top of those aluminum layers, and this nitrogenous aluminium lamination is made up of a plurality of aluminium grain;
Wherein, this nitrogenous aluminium lamination that is positioned at the top can suppress those aluminum layers of below, and prevents the generation of small embossment.
14. grid layer as claimed in claim 13, wherein this nitrogenous aluminium lamination is aln layer (AlN).
15. grid layer as claimed in claim 13, wherein this nitrogenous aluminium lamination is an oxygen containing aln layer (AlON).
16. manufacture method that does not have the grid layer of small embossment, in order to avoid producing uneven projection, wherein, this grid layer is an aluminum layer, and under one first pressure and one first film forming power, form this aluminum layer on a substrate, the scope of this first pressure is between 0.5Pa～4Pa, and the scope of this first film forming power is about 0.1～10w/cm
2Between.
17. manufacture method as claimed in claim 16, wherein this first pressure preferably is about 1Pa.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031064094A CN100369218C (en) | 2003-02-25 | 2003-02-25 | Grid layer having no small embossment and making method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031064094A CN100369218C (en) | 2003-02-25 | 2003-02-25 | Grid layer having no small embossment and making method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN1525541A true CN1525541A (en) | 2004-09-01 |
| CN100369218C CN100369218C (en) | 2008-02-13 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103646849A (en) * | 2013-11-18 | 2014-03-19 | 武汉新芯集成电路制造有限公司 | Novel process for reducing hillock-shaped defects produced on aluminum film |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100208024B1 (en) * | 1996-10-04 | 1999-07-15 | 윤종용 | An alluminium gate structure of tft for protecting the hillock and a method of fabricating the same |
| US6537427B1 (en) * | 1999-02-04 | 2003-03-25 | Micron Technology, Inc. | Deposition of smooth aluminum films |
| US6140701A (en) * | 1999-08-31 | 2000-10-31 | Micron Technology, Inc. | Suppression of hillock formation in thin aluminum films |
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2003
- 2003-02-25 CN CNB031064094A patent/CN100369218C/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103646849A (en) * | 2013-11-18 | 2014-03-19 | 武汉新芯集成电路制造有限公司 | Novel process for reducing hillock-shaped defects produced on aluminum film |
| CN103646849B (en) * | 2013-11-18 | 2016-08-17 | 武汉新芯集成电路制造有限公司 | A kind of technique reducing aluminum thin film generation hillock shape defect |
| CN105957804A (en) * | 2013-11-18 | 2016-09-21 | 武汉新芯集成电路制造有限公司 | Technology for reducing hillock defect generated by aluminum thin film |
| CN105957804B (en) * | 2013-11-18 | 2018-09-11 | 武汉新芯集成电路制造有限公司 | A kind of technique for reducing aluminium film and generating hillock shape defect |
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| CN100369218C (en) | 2008-02-13 |
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Granted publication date: 20080213 Termination date: 20180225 |