CN103646849B - A kind of technique reducing aluminum thin film generation hillock shape defect - Google Patents
A kind of technique reducing aluminum thin film generation hillock shape defect Download PDFInfo
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- CN103646849B CN103646849B CN201310578991.7A CN201310578991A CN103646849B CN 103646849 B CN103646849 B CN 103646849B CN 201310578991 A CN201310578991 A CN 201310578991A CN 103646849 B CN103646849 B CN 103646849B
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- thin film
- titanium nitride
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- nitride membrane
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02697—Forming conducting materials on a substrate
Abstract
The present invention relates to a kind of aluminum thin film that reduces and produce the new technology of hillock shape defect.Comprising the following steps: in silicon dioxide substrates, use physical gas-phase deposite method low temperature depositing adhesion layer titanium thin film, adhesion layer titanium thin film covers surface on silica；Deposition barrier layer titanium nitride membrane, barrier layer titanium nitride membrane covers at adhesion layer titanium thin film upper surface；High temperature deposition aluminum thin film, aluminum thin film covers at barrier layer titanium nitride membrane upper surface；Deposit one layer of anti-reflection layer titanium nitride membrane at aluminum oxide film upper surface again after aluminum thin film upper surface one layer of aluminum oxide film of deposition, or then pass to nitrogen until the nitrogen content in anti-reflection layer titanium nitride membrane reaches saturated at aluminum one layer of anti-reflection layer titanium nitride membrane of thin film upper surface Direct precipitation.The invention has the beneficial effects as follows: use simple technological process to overcome the unordered increase of aluminium grain in production process of aluminum thin film and make aluminum thin film produce the defect of hillock shape.
Description
Technical field
The present invention relates to a kind of aluminum thin film that reduces and produce the new technology of hillock shape defect, particularly relate to a kind of answering
The technique that aluminum thin film produces hillock shape defect is reduced in CIS product manufacturing.
Background technology
At present, camera-sensor technology (CIS:CMOS image is manufactured with metal oxide semiconductor techniques
Sensor) prevailing technology of emerging imaging field is had become as.It is anti-that metallic film has good visible ray
Penetrate conductive performance, grid can be completely cut off as each pixel cell lattice, be also everybody commonly used doing current
Method.Aluminum thin film is excellent simple with manufacturing process because of its visible reflectance performance, and by most of main flows CIS
Manufacturer is used.But, aluminum thin film, easily in subsequent high temperature annealing process, produces hillock shape defect,
Easily make aluminum film surface form light diffuse-reflectance effect, and then the quantity of visible ray conduction can be had a strong impact on
And quality, finally affect image quality.
Summary of the invention
The technical problem to be solved is to provide a kind of aluminum thin film that reduces and produces hillock shape defect
Technique, overcomes aluminum thin film aluminum thin film in process of production and produces the defect of hillock shape.
The technical scheme is that a kind of aluminum thin film that reduces produces hillock shape
The new technology of defect, comprises the following steps:
In silicon dioxide substrates, use physical gas-phase deposite method deposition of adhesion titanium thin film, described viscous
Attached layer titanium thin film covers at described silicon dioxide upper surface；
After deposition of adhesion titanium thin film, use physical gas-phase deposite method deposition barrier layer titanium nitride thin
Film, described barrier layer titanium nitride membrane covers and does not connects with described silicon dioxide at described adhesion layer titanium thin film
On that surface touched；
After the titanium nitride membrane of deposition barrier layer, use physical gas-phase deposite method deposition of aluminum thin film, described
Aluminum thin film covers that do not contact at described barrier layer titanium nitride membrane with described adhesion layer titanium thin film
On surface；
One layer of aluminium oxide is deposited with barrier layer titanium nitride membrane in the side that described aluminum thin film does not contacts
In the side that aluminum oxide film does not contacts with aluminum thin film, one layer of anti-reflection layer is deposited again after thin film
Titanium nitride membrane, or straight in the side that described aluminum thin film does not contacts with barrier layer titanium nitride membrane
Connect one layer of anti-reflection layer titanium nitride membrane of deposition and then pass to nitrogen until described anti-reflection layer titanium nitride thin
Nitrogen content in film reaches saturated.
Further, the side that described aluminum thin film does not contacts with barrier layer titanium nitride membrane deposits one layer
In the side that aluminum oxide film does not contacts with aluminum thin film, deposit one layer again after aluminum oxide film to prevent
Reflecting layer titanium nitride membrane, or do not contact with barrier layer titanium nitride membrane at described aluminum thin film that
On face, one layer of anti-reflection layer titanium nitride membrane of Direct precipitation then passes to nitrogen until described anti-reflection layer nitrogen
The nitrogen content changed in titanium thin film reaches in saturation process, the aluminium element in described aluminium oxide and the matter of oxygen element
Amount ratio is 0.9～1.5:0.5～1, and described aluminum oxide film film thickness is 20～70 angstroms, described antireflection
In layer titanium nitride membrane, the mass ratio of titanium and nitrogen is 70～80:20～30, described anti-reflection layer titanium nitride thin
Film thickness is 400～600 angstroms, and the reaction temperature of described anti-reflection layer titanium nitride membrane depositing operation is
20～40 DEG C.
Further, described in silicon dioxide substrates, use physical gas-phase deposite method deposition of adhesion titanium
Thin film, described adhesion layer titanium thin film covers in described silicon dioxide upper surface step, described adhesion layer titanium
Film thickness is 200～300 angstroms, the reaction temperature of described adhesion layer titanium thin film deposition processes be 20～
40℃。
Further, after described deposition of adhesion titanium thin film, physical gas-phase deposite method deposition is used to stop
Layer titanium nitride membrane, described barrier layer titanium nitride membrane covers at described adhesion layer titanium thin film not with described two
On that surface that silicon oxide contacts in step, described barrier layer titanium nitride thin film thickness is 200～300
Angstrom, the reaction temperature of described barrier layer titanium nitride membrane depositing operation is 20～40 DEG C.
Further, after the titanium nitride membrane of described deposition barrier layer, use physical gas-phase deposite method deposition
Aluminum thin film, described aluminum thin film cover described barrier layer titanium nitride membrane not with described adhesion layer titanium thin film phase
On that surface of contact in step, described aluminum film thickness is 1500～2500 angstroms, described aluminum thin film
The reaction temperature of depositing operation is 200～350 DEG C.
The invention has the beneficial effects as follows: use simple technological process to overcome aluminum thin film in production technology mistake
In journey, the unordered increase of aluminium grain makes aluminum thin film produce the defect of hillock shape.
Accompanying drawing explanation
Fig. 1 is the structural representation of the technique reducing aluminum thin film generation hillock shape defect of the present invention.
In accompanying drawing, the list of parts representated by each label is as follows:
1, anti-reflection layer titanium nitride membrane, 2, additive thin layer, 3, aluminum thin film, 4, barrier layer nitrogen
Change titanium thin film, 5, adhesion layer titanium thin film, 6, silicon dioxide.
Detailed description of the invention
Being described principle and the feature of the present invention below in conjunction with accompanying drawing, example is served only for explaining this
Invention, is not intended to limit the scope of the present invention.
As it is shown in figure 1, the present invention is a kind of reduces the row that aluminum thin film produces each tunic of technique of hillock shape defect
Cloth position is the bottom silicon dioxide 6 as carrier substrates, and silicon dioxide 6 upper surface covers adhesion layer
Titanium thin film 5, adhesion layer titanium thin film 5 upper surface covering barrier layer titanium nitride membrane 4, barrier layer titanium nitride
Thin film 4 upper surface aluminium coating thin film 3, the upper surface of aluminum thin film 3 covers additive thin layer 2, adds
Thing thin layer 2 upper surface covers anti-reflection layer titanium nitride membrane 1.
A kind of key step reducing the technique that aluminum thin film produces hillock shape defect of the present invention includes: at dioxy
On the substrate of SiClx 6, (so-called physical gas-phase deposite method is also known as magnetic to use physical gas-phase deposite method
Control sputtering method, refers under vacuum, uses physical method, by material source solid or liquid
Surface is gasificated into gaseous atom, molecule or partial ionization and becomes ion, and by low-pressure gas or plasma
Process, the method in matrix surface deposition with the thin film of certain specific function.) low temperature depositing adhesion layer
Titanium thin film 5, adhesion layer titanium thin film 5 covers at silicon dioxide 6 upper surface；Deposition of adhesion titanium thin film 5
Afterwards, physical gas-phase deposite method deposition barrier layer titanium nitride membrane 4, barrier layer titanium nitride membrane are used
4 cover at adhesion layer titanium thin film 5 upper surface；After deposition barrier layer titanium nitride membrane 4, use physics
CVD method high temperature deposition aluminum thin film 3, aluminum thin film 3 covers table on barrier layer titanium nitride membrane 4
Face；At aluminum thin film 3 upper surface one layer of additive thin layer 2 of deposition again at additive thin layer 2 upper surface
Deposit one layer of anti-reflection layer titanium nitride membrane 1, or one layer of anti-reflection layer of Direct precipitation on aluminum thin film 3
Titanium nitride membrane 1 then passes to nitrogen until the nitrogen content in described anti-reflection layer titanium nitride membrane 1 reaches
Saturated.The oxide film layer added in additive thin layer 2 is aluminum oxide film, and anti-reflection layer nitrogenizes
Titanium thin film 1 uses physical gas-phase deposite method to obtain, and uses plasma-based to go to bombard Titanium target, at titanium target
Material is passed through nitrogen and the nitridation of Titanium atom is generated anti-reflection layer titanium nitride thin while being bombarded whereabouts
Film 1.
Adding again after the upper surface of aluminum thin film 3 deposits one layer of additive thin layer 2 when using
When the upper surface of thing thin layer 2 deposits one layer of anti-reflection layer titanium nitride membrane 1 technique, additive thin layer
Additive in 2 is aluminium oxide, and aluminium element and the mass ratio of oxygen element in described additive aluminium oxide are
0.9～1.5:0.5～1, alumina mass ratio is preferably 1:0.89, and alumina Concentraton gradient is with aluminum thin film 3
For starting, becoming larger, in additive thin layer 2, the thickness of aluminum oxide film is 20～70 angstroms, excellent
Selecting thickness is 40 angstroms, and adding aluminum oxide film is that additive thin layer 2 adds according to introducing principle in situ
Being with aluminum thin film 3 as matrix when adding aluminium oxide, the aluminum oxide film of introducing has with both base aluminum thin film 3
There is natural good combination, be possible to prevent double-layer films to cause the most greatly poor high temperature stability because of nature difference
And make double-layer films separate cracking, one layer of heavily stressed aluminum oxide film is deposited on the surface of aluminum thin film 3,
Can be grown up by unordered in high-temperature annealing process of this layer of heavily stressed thin film suppression aluminium grain；When adopting
Be that directly upper surface at aluminum thin film 3 deposits one layer of anti-reflection layer titanium nitride membrane 1 and is passed through
When nitrogen is until nitrogen content in anti-reflection layer titanium nitride membrane 1 reaches saturation technique, it is with counnter attack
Penetrating layer titanium nitride membrane 1 is the mass ratio that matrix changes titanium nitride in situ, reflecting layer, place where troops were originally stationed titanium nitride membrane
Titanium nitrogen mass ratio in 1 is 70～80:20～30, and preferably titanium nitrogen mass ratio is 77.3:22.7, counnter attack
The thickness penetrating layer titanium nitride membrane 1 is 400～600 angstroms, and preferred thickness is 500 angstroms, the temperature of reaction
Being 20～40 DEG C, the content manufacture nitrogen content increasing nitrogen by being passed through nitrogen in situ reaches saturation, anti-
The thickness of reflecting layer titanium nitride membrane is constant is still 400～600 angstroms, and preferred thickness is 500 angstroms, reaction
Temperature be 20～40 DEG C, nitrogen content can improve the stress of titanium nitride membrane 1 after reaching saturation,
The nitrogen titanium mass ratio optimized in anti-reflection layer titanium nitride membrane 1 can improve anti-reflection layer titanium nitride membrane 1
Stress, suppress the aluminium grain unordered length in high-temperature annealing process by this layer of heavily stressed thin film
Greatly.The effect using both the above process to be reached is all in high annealing mistake by suppression aluminium grain
Unordered in journey is grown up, thus reduces the generation of aluminum thin film hillock shape defect.
As it is shown in figure 1, technical process is covered as the upper surface of the silicon dioxide 6 of carrier substrates at bottom
Being stamped adhesion layer titanium thin film 5, the thickness of adhesion layer titanium thin film 5 is 200～300 angstroms, preferably 250 angstroms,
The reaction temperature of adhesion layer titanium thin film deposition processes is 20～40 DEG C, the energy of reaction be 8000～
10800W.The upper surface of adhesion layer titanium thin film 5 is coated with barrier layer titanium nitride membrane 4, and barrier layer nitrogenizes
The thickness of titanium thin film 4 is 200～300 angstroms, preferably 250 angstroms, barrier layer titanium nitride membrane depositing operation
Reaction temperature be 20～40 DEG C, the energy of reaction is 8000～10800W.Barrier layer titanium nitride membrane 4
Upper surface be covered with need produce aluminum thin film 3, the thickness of aluminum thin film 3 is 1500～2500 angstroms, excellent
Selecting thickness is 2000 angstroms, and the reaction temperature of aluminum thin film deposition processes is 200～350 DEG C, and preferable temperature is
270 DEG C, the energy of reaction is 10000～22000W.
Process above have employed the principle introduced in situ, achieves higher economic effect with relatively low cost
Benefit, has saved resource, improves economic benefit.
The foregoing is only presently preferred embodiments of the present invention, not in order to limit the present invention, all in the present invention
Spirit and principle within, any modification, equivalent substitution and improvement etc. made, should be included in this
Within bright protection domain.
Claims (5)
1. one kind is reduced the technique that aluminum thin film produces hillock shape defect, it is characterised in that include following step
Rapid:
In silicon dioxide substrates, use physical gas-phase deposite method deposition of adhesion titanium thin film, described viscous
Attached layer titanium thin film covers at described silicon dioxide upper surface；
After deposition of adhesion titanium thin film, use physical gas-phase deposite method deposition barrier layer titanium nitride thin
Film, described barrier layer titanium nitride membrane covers and does not connects with described silicon dioxide at described adhesion layer titanium thin film
On that surface touched；
After the titanium nitride membrane of deposition barrier layer, use physical gas-phase deposite method deposition of aluminum thin film, described
Aluminum thin film covers that do not contact at described barrier layer titanium nitride membrane with described adhesion layer titanium thin film
On surface；
One layer of aluminium oxide is deposited with barrier layer titanium nitride membrane in the side that described aluminum thin film does not contacts
In the side that aluminum oxide film does not contacts with aluminum thin film, one layer of anti-reflection layer is deposited again after thin film
Titanium nitride membrane.
A kind of aluminum thin film that reduces the most according to claim 1 produces the technique of hillock shape defect, its
It is characterised by, the side that described aluminum thin film does not contacts with barrier layer titanium nitride membrane deposits one layer of oxygen
In the side that aluminum oxide film does not contacts with aluminum thin film, one layer of counnter attack is deposited again after changing aluminum thin film
Penetrate in layer titanium nitride membrane step, the mass ratio of the aluminium element in described aluminium oxide and oxygen element be 0.9～
1.5:0.5～1, described aluminum oxide film film thickness is 20～70 angstroms.
A kind of aluminum thin film that reduces the most according to claim 1 produces the technique of hillock shape defect, its
It is characterised by, described in silicon dioxide substrates, use physical gas-phase deposite method deposition of adhesion titanium thin
Film, described adhesion layer titanium thin film covers in described silicon dioxide upper surface step, and described adhesion layer titanium is thin
Film thickness is 200～300 angstroms, and the reaction temperature of described adhesion layer titanium thin film deposition processes is 20～40 DEG C.
A kind of aluminum thin film that reduces the most according to claim 1 produces the technique of hillock shape defect, its
It is characterised by, after described deposition of adhesion titanium thin film, uses physical gas-phase deposite method deposition barrier layer
Titanium nitride membrane, described barrier layer titanium nitride membrane cover described adhesion layer titanium thin film not with described dioxy
On that surface that SiClx contacts in step, described barrier layer titanium nitride thin film thickness is 200～300
Angstrom, the reaction temperature of described barrier layer titanium nitride membrane depositing operation is 20～40 DEG C.
5. produce the work of hillock shape defect according to the arbitrary described a kind of aluminum thin film that reduces of Claims 1 to 4
Skill, it is characterised in that after the titanium nitride membrane of described deposition barrier layer, uses physical gas-phase deposite method
Deposition of aluminum thin film, described aluminum thin film covers not thin with described adhesion layer titanium at described barrier layer titanium nitride membrane
On that surface that film contacts in step, described aluminum film thickness is 1500～2500 angstroms, described aluminum
The reaction temperature of thin film deposition processes is 200～350 DEG C.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
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| CN201310578991.7A CN103646849B (en) | 2013-11-18 | 2013-11-18 | A kind of technique reducing aluminum thin film generation hillock shape defect |
| CN201610440482.1A CN105957804B (en) | 2013-11-18 | 2013-11-18 | A kind of technique for reducing aluminium film and generating hillock shape defect |
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| CN201310578991.7A CN103646849B (en) | 2013-11-18 | 2013-11-18 | A kind of technique reducing aluminum thin film generation hillock shape defect |
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| CN201610440482.1A Division CN105957804B (en) | 2013-11-18 | 2013-11-18 | A kind of technique for reducing aluminium film and generating hillock shape defect |
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| CN103646849B true CN103646849B (en) | 2016-08-17 |
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| CN107946235A (en) * | 2017-11-21 | 2018-04-20 | 上海华虹宏力半导体制造有限公司 | Improve the method for ultra-thin aluminum bronze roughness of film |
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| Publication number | Publication date |
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| CN103646849A (en) | 2014-03-19 |
| CN105957804B (en) | 2018-09-11 |
| CN105957804A (en) | 2016-09-21 |
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