CN103646849A - Novel process for reducing hillock-shaped defects produced on aluminum film - Google Patents
Novel process for reducing hillock-shaped defects produced on aluminum film Download PDFInfo
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- CN103646849A CN103646849A CN201310578991.7A CN201310578991A CN103646849A CN 103646849 A CN103646849 A CN 103646849A CN 201310578991 A CN201310578991 A CN 201310578991A CN 103646849 A CN103646849 A CN 103646849A
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Abstract
The invention relates to a novel process for reducing hillock-shaped defects produced on an aluminum film. The process comprises the steps of: depositing an adhesion layer titanium film on a silica substrate with a low temperature by use of physical vapor deposition, wherein the adhesion layer titanium film covers an upper surface of the silica; depositing a barrier layer titanium nitride film covering an upper surface of the adhesion layer titanium film; depositing an aluminum film with a high temperature, wherein the aluminum film covers an upper surface of the barrier layer titanium nitride film; and depositing a layer of anti-reflection layer titanium nitride film on an upper surface of an aluminum oxide film after the layer of aluminum oxide film is deposited on an upper surface of the aluminum film, or depositing directly a layer of anti-reflection layer titanium nitride film on the upper surface of the aluminum film and then filling nitrogen until the nitrogen content in the anti-reflection layer titanium nitride film is saturated. The beneficial effect of the invention lies in that the use of a simple process flow overcomes the problem that aluminum grain disorder and growth in the production process of an aluminum film result in hillock-shaped defects produced on the aluminum film.
Description
Technical field
The present invention relates to a kind of new technology that aluminium film produces hillock shape defect that reduces, relate in particular to the new technology that reduces aluminium film generation hillock shape defect in the manufacture of a kind of CIS of being applied to product.
Background technology
At present, with metal oxide semiconductor techniques, manufacture the main flow technique that camera-sensor technology (CIS:CMOS image sensor) has become emerging imaging field.Metallic film has good visible ray reflection conductive performance, can be used as the isolated grid of each pixel cell lattice, is also the current way that everybody generally adopts.Aluminium film is because its visible ray reflecting properties is excellent and manufacturing process is simple, and adopted by most of main flow CIS manufacturer.But aluminium film easily, in follow-up high-temperature annealing process, produces hillock shape defect, easily make aluminium film surface form light diffuse reflection effect, and then can have a strong impact on the quality and quantity of visible ray conduction, finally affect image quality.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of new technology that aluminium film produces hillock shape defect that reduces, and has overcome the aluminium film defect of aluminium film generation hillock shape in process of production.
The technical scheme that the present invention solves the problems of the technologies described above is as follows: a kind of new technology that reduces aluminium film generation hillock shape defect, comprises the following steps:
In silicon dioxide substrates, adopt physical gas-phase deposite method deposition of adhesion titanium film, described adhesion layer titanium film covers described silicon dioxide upper surface;
After deposition of adhesion titanium film, adopt physical gas-phase deposite method deposited barrier layer titanium nitride membrane, described barrier layer titanium nitride membrane covers on that surface that described adhesion layer titanium film do not contact with described silicon dioxide;
After deposited barrier layer titanium nitride membrane, adopt physical gas-phase deposite method deposition of aluminum film, described aluminium film covers on that surface that described barrier layer titanium nitride membrane do not contact with described adhesion layer titanium film;
In the side that described aluminium film does not contact with barrier layer titanium nitride membrane, deposit in the side not contacting with aluminium film at aluminum oxide film again after one deck aluminum oxide film and deposit one deck anti-reflection layer titanium nitride membrane, or in the side not contacting with barrier layer titanium nitride membrane at described aluminium film, then Direct precipitation one deck anti-reflection layer titanium nitride membrane passes into nitrogen until the nitrogen content in described anti-reflection layer titanium nitride membrane reaches capacity.
Further, in the side that described aluminium film does not contact with barrier layer titanium nitride membrane, deposit in the side not contacting with aluminium film at aluminum oxide film again after one deck aluminum oxide film and deposit one deck anti-reflection layer titanium nitride membrane, or in the side not contacting with barrier layer titanium nitride membrane at described aluminium film, then Direct precipitation one deck anti-reflection layer titanium nitride membrane passes into nitrogen until the nitrogen content in described anti-reflection layer titanium nitride membrane reaches capacity in step, aluminium element in described aluminium oxide and the mass ratio of oxygen element are 0.9～1.5:0.5～1, described aluminum oxide film film thickness is 20～70 dusts, in described anti-reflection layer titanium nitride membrane, the mass ratio of titanium and nitrogen is 70～80:20～30, described anti-reflection layer titanium nitride thin film thickness is 400～600 dusts, the reaction temperature of described anti-reflection layer titanium nitride membrane depositing operation is 20～40 ℃.
Further, described in silicon dioxide substrates, adopt physical gas-phase deposite method deposition of adhesion titanium film, described adhesion layer titanium film covers in described silicon dioxide upper surface step, described adhesion layer titanium film thickness is 200～300 dusts, and the reaction temperature of described adhesion layer titanium thin film deposition processes is 20～40 ℃.
Further, after described deposition of adhesion titanium film, adopt physical gas-phase deposite method deposited barrier layer titanium nitride membrane, described barrier layer titanium nitride membrane covers that surperficial going up in step that described adhesion layer titanium film does not contact with described silicon dioxide, described barrier layer titanium nitride thin film thickness is 200～300 dusts, and the reaction temperature of described barrier layer titanium nitride membrane depositing operation is 20～40 ℃.
Further, after described deposited barrier layer titanium nitride membrane, adopt physical gas-phase deposite method deposition of aluminum film, described aluminium film covers that surperficial going up in step that described barrier layer titanium nitride membrane does not contact with described adhesion layer titanium film, described aluminium film thickness is 1500～2500 dusts, and the reaction temperature of described aluminium thin film deposition processes is 200～350 ℃.
The invention has the beneficial effects as follows: adopt simple technological process to overcome the unordered increase of aluminium film aluminium grain in production process and make aluminium film produce the defect of hillock shape.
Accompanying drawing explanation
Fig. 1 is the structural representation that minimizing aluminium film of the present invention produces the new technology of hillock shape defect.
In accompanying drawing, the list of parts of each label representative is as follows:
1, anti-reflection layer titanium nitride membrane, 2, additive thin layer, 3, aluminium film, 4, barrier layer titanium nitride membrane, 5, adhesion layer titanium film, 6, silicon dioxide.
Embodiment
Below in conjunction with accompanying drawing, principle of the present invention and feature are described, example, only for explaining the present invention, is not intended to limit scope of the present invention.
As shown in Figure 1, a kind of position of arranging of reducing each tunic of new technology of aluminium film generation hillock shape defect of the present invention is that the bottom is as the silicon dioxide 6 of carrier substrates, silicon dioxide 6 upper surfaces cover adhesion layer titanium film 5, adhesion layer titanium film 5 upper surface covering barrier layer titanium nitride membranes 4, barrier layer titanium nitride membrane 4 upper surface aluminium coating films 3, the upper surface of aluminium film 3 covers additive thin layer 2, and additive thin layer 2 upper surfaces cover anti-reflection layer titanium nitride membrane 1.
A kind of key step that reduces the new technology of aluminium film generation hillock shape defect of the present invention comprises: on the substrate of silicon dioxide 6, (so-called physical gas-phase deposite method claims again magnetically controlled sputter method to adopt physical gas-phase deposite method, refer under vacuum condition, adopt physical method, by material source---solid or liquid surface are gasificated into gaseous atom, molecule or partial ionization and become ion, and by low-pressure gas or plasma process, in matrix surface deposition, there is the method for the film of certain specific function.) low temperature depositing adhesion layer titanium film 5, adhesion layer titanium film 5 covers silicon dioxide 6 upper surfaces; After deposition of adhesion titanium film 5, adopt physical gas-phase deposite method deposited barrier layer titanium nitride membrane 4, barrier layer titanium nitride membrane 4 covers adhesion layer titanium film 5 upper surfaces; After deposited barrier layer titanium nitride membrane 4, adopt physical gas-phase deposite method high temperature deposition aluminium film 3, aluminium film 3 covers barrier layer titanium nitride membrane 4 upper surfaces; At aluminium film 3 upper surface deposition one deck additive thin layers 2, at additive thin layer 2 upper surfaces, deposit one deck anti-reflection layer titanium nitride membranes 1 again, or then Direct precipitation one deck anti-reflection layer titanium nitride membrane 1 passes into nitrogen until the nitrogen content in described anti-reflection layer titanium nitride membrane 1 reaches capacity on aluminium film 3.The oxide film layer adding in additive thin layer 2 is aluminum oxide film, anti-reflection layer titanium nitride membrane 1 adopts physical gas-phase deposite method to obtain, adopt electricity slurry to remove to bombard Titanium target, when titanium target is bombarded whereabouts, pass into nitrogen the nitrogenize of Titanium atom is generated to anti-reflection layer titanium nitride membrane 1.
When adopt be after the upper surface deposition one deck additive thin layer 2 at aluminium film 3 again when the upper surface of additive thin layer 2 deposits one deck anti-reflection layer titanium nitride membrane 1 technique, additive in additive thin layer 2 is aluminium oxide, aluminium element in described additive aluminium oxide and the mass ratio of oxygen element are 0.9～1.5:0.5～1, alumina mass ratio is preferably 1:0.89, alumina concentration gradient be take aluminium film 3 as starting, become gradually large, in additive thin layer 2, the thickness of aluminum oxide film is 20～70 dusts, preferred thickness is 40 dusts, adding aluminum oxide film is to introduce principle according to original position, additive thin layer 2 is to take aluminium film 3 as matrix while adding aluminium oxide, both have natural good combination the aluminum oxide film of introducing and base aluminum film 3, can prevent that double-layer films from making the separated cracking of double-layer films because nature difference causes too greatly poor high temperature stability, the heavily stressed aluminum oxide film of surface deposition one deck at aluminium film 3, can suppress unordered grow up of aluminium grain in high-temperature annealing process by this layer of heavily stressed film, when what adopt, be during directly in upper surface deposition one deck anti-reflection layer titanium nitride membrane 1 of aluminium film 3 and then the state technique that passes into nitrogen until the nitrogen content in anti-reflection layer titanium nitride membrane 1 reaches capacity, to take anti-reflection layer titanium nitride membrane 1 to change the mass ratio of titanium nitride as matrix original position, titanium nitrogen mass ratio in former anti-reflection layer titanium nitride membrane 1 is 70～80:20～30, preferably titanium nitrogen mass ratio is 77.3:22.7, the thickness of anti-reflection layer titanium nitride membrane 1 is 400～600 dusts, preferred thickness is 500 dusts, the temperature of reaction is 20～40 ℃, the content that increases nitrogen by passing into nitrogen original position is manufactured the nitrogen content state that reaches capacity, the thickness of anti-reflection layer titanium nitride membrane is constant is still 400～600 dusts, preferred thickness is 500 dusts, the temperature of reaction is 20～40 ℃, nitrogen content reaches capacity can improve the stress of titanium nitride membrane 1 after state, nitrogen titanium mass ratio in optimization anti-reflection layer titanium nitride membrane 1 can improve the stress of anti-reflection layer titanium nitride membrane 1, by this layer of heavily stressed film, suppress unordered grow up of aluminium grain in high-temperature annealing process.The effect that adopts above two kinds of processes to reach is all by suppressing unordered grow up of aluminium grain in high-temperature annealing process, thereby reduces the generation of aluminium film hillock shape defect.
As shown in Figure 1, in technical process, at bottom, as the upper surface of the silicon dioxide 6 of carrier substrates, be coated with adhesion layer titanium film 5, the thickness of adhesion layer titanium film 5 is 200～300 dusts, preferred 250 dusts, the reaction temperature of adhesion layer titanium thin film deposition processes is 20～40 ℃, and the energy of reaction is 8000～10800W.The upper surface of adhesion layer titanium film 5 is coated with barrier layer titanium nitride membrane 4, the thickness of barrier layer titanium nitride membrane 4 is 200～300 dusts, preferred 250 dusts, the reaction temperature of barrier layer titanium nitride membrane depositing operation is 20～40 ℃, the energy of reaction is 8000～10800W.The upper surface of barrier layer titanium nitride membrane 4 is covered with the aluminium film 3 that needs production, the thickness of aluminium film 3 is 1500～2500 dusts, and preferred thickness is 2000 dusts, and the reaction temperature of aluminium thin film deposition processes is 200～350 ℃, preferably temperature is 270 ℃, and the energy of reaction is 10000～22000W.
Above process using the principle introduced of original position, with lower cost, realized higher economic benefit, saved resource, improved economic benefit.
The foregoing is only preferred embodiment of the present invention, in order to limit the present invention, within the spirit and principles in the present invention not all, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (5)
1. reduce the new technology that aluminium film produces hillock shape defect, it is characterized in that, comprise the following steps:
In silicon dioxide substrates, adopt physical gas-phase deposite method deposition of adhesion titanium film, described adhesion layer titanium film covers described silicon dioxide upper surface;
After deposition of adhesion titanium film, adopt physical gas-phase deposite method deposited barrier layer titanium nitride membrane, described barrier layer titanium nitride membrane covers on that surface that described adhesion layer titanium film do not contact with described silicon dioxide;
After deposited barrier layer titanium nitride membrane, adopt physical gas-phase deposite method deposition of aluminum film, described aluminium film covers on that surface that described barrier layer titanium nitride membrane do not contact with described adhesion layer titanium film;
In the side that described aluminium film does not contact with barrier layer titanium nitride membrane, deposit in the side not contacting with aluminium film at aluminum oxide film again after one deck aluminum oxide film and deposit one deck anti-reflection layer titanium nitride membrane, or in the side not contacting with barrier layer titanium nitride membrane at described aluminium film, then Direct precipitation one deck anti-reflection layer titanium nitride membrane passes into nitrogen until the nitrogen content in described anti-reflection layer titanium nitride membrane reaches capacity.
2. a kind of new technology that aluminium film produces hillock shape defect that reduces according to claim 1, it is characterized in that, in the side that described aluminium film does not contact with barrier layer titanium nitride membrane, deposit in the side not contacting with aluminium film at aluminum oxide film again after one deck aluminum oxide film and deposit one deck anti-reflection layer titanium nitride membrane, or in the side not contacting with barrier layer titanium nitride membrane at described aluminium film, then Direct precipitation one deck anti-reflection layer titanium nitride membrane passes into nitrogen until the nitrogen content in described anti-reflection layer titanium nitride membrane reaches capacity in step, aluminium element in described aluminium oxide and the mass ratio of oxygen element are 0.9～1.5:0.5～1, described aluminum oxide film film thickness is 20～70 dusts, in described anti-reflection layer titanium nitride membrane, the mass ratio of titanium and nitrogen is 70～80:20～30, described anti-reflection layer titanium nitride thin film thickness is 400～600 dusts, the reaction temperature of described anti-reflection layer titanium nitride membrane depositing operation is 20～40 ℃.
3. a kind of new technology that aluminium film produces hillock shape defect that reduces according to claim 1, it is characterized in that, described in silicon dioxide substrates, adopt physical gas-phase deposite method deposition of adhesion titanium film, described adhesion layer titanium film covers in described silicon dioxide upper surface step, described adhesion layer titanium film thickness is 200～300 dusts, and the reaction temperature of described adhesion layer titanium thin film deposition processes is 20～40 ℃.
4. a kind of new technology that aluminium film produces hillock shape defect that reduces according to claim 1, it is characterized in that, after described deposition of adhesion titanium film, adopt physical gas-phase deposite method deposited barrier layer titanium nitride membrane, described barrier layer titanium nitride membrane covers that surperficial going up in step that described adhesion layer titanium film does not contact with described silicon dioxide, described barrier layer titanium nitride thin film thickness is 200～300 dusts, and the reaction temperature of described barrier layer titanium nitride membrane depositing operation is 20～40 ℃.
5. according to the arbitrary described a kind of new technology that reduces aluminium film generation hillock shape defect of claim 1～4, it is characterized in that, after described deposited barrier layer titanium nitride membrane, adopt physical gas-phase deposite method deposition of aluminum film, described aluminium film covers that surperficial going up in step that described barrier layer titanium nitride membrane does not contact with described adhesion layer titanium film, described aluminium film thickness is 1500～2500 dusts, and the reaction temperature of described aluminium thin film deposition processes is 200～350 ℃.
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| CN201610440482.1A CN105957804B (en) | 2013-11-18 | 2013-11-18 | A kind of technique for reducing aluminium film and generating hillock shape defect |
| CN201310578991.7A CN103646849B (en) | 2013-11-18 | 2013-11-18 | A kind of technique reducing aluminum thin film generation hillock shape defect |
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| CN201310578991.7A CN103646849B (en) | 2013-11-18 | 2013-11-18 | A kind of technique reducing aluminum thin film generation hillock shape defect |
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| CN105957804A (en) | 2016-09-21 |
| CN103646849B (en) | 2016-08-17 |
| CN105957804B (en) | 2018-09-11 |
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