CN1501153A - 薄膜晶体管阵列面板及其制造方法 - Google Patents
薄膜晶体管阵列面板及其制造方法 Download PDFInfo
- Publication number
- CN1501153A CN1501153A CNA031649815A CN03164981A CN1501153A CN 1501153 A CN1501153 A CN 1501153A CN A031649815 A CNA031649815 A CN A031649815A CN 03164981 A CN03164981 A CN 03164981A CN 1501153 A CN1501153 A CN 1501153A
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- Prior art keywords
- film
- thin
- display panel
- film transistor
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
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- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136204—Arrangements to prevent high voltage or static electricity failures
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
- H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/13629—Multilayer wirings
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Nonlinear Science (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (17)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020020050778A KR100870013B1 (ko) | 2002-08-27 | 2002-08-27 | 박막 트랜지스터 어레이 기판 및 그 제조 방법 |
KR0050778/2002 | 2002-08-27 | ||
KR0050778/02 | 2002-08-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1501153A true CN1501153A (zh) | 2004-06-02 |
CN100346218C CN100346218C (zh) | 2007-10-31 |
Family
ID=32064872
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB031649815A Expired - Fee Related CN100346218C (zh) | 2002-08-27 | 2003-08-27 | 薄膜晶体管阵列面板及其制造方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US6927420B2 (zh) |
JP (1) | JP4662700B2 (zh) |
KR (1) | KR100870013B1 (zh) |
CN (1) | CN100346218C (zh) |
TW (1) | TWI289718B (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1897285B (zh) * | 2005-07-12 | 2010-05-12 | 三星电子株式会社 | 薄膜晶体管阵列面板及制造方法 |
US7745342B2 (en) | 2006-01-02 | 2010-06-29 | Samsung Electronics Co., Ltd. | Display substrate and method of manufacturing the same |
CN103809318A (zh) * | 2014-02-14 | 2014-05-21 | 京东方科技集团股份有限公司 | 一种阵列基板制造方法、阵列基板及显示设备 |
CN104078469A (zh) * | 2014-06-17 | 2014-10-01 | 京东方科技集团股份有限公司 | 一种阵列基板及其制备方法,显示面板、显示装置 |
Families Citing this family (25)
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JP4640690B2 (ja) * | 2002-07-24 | 2011-03-02 | 日本電気株式会社 | アクティブマトリクス有機el表示装置の製造方法 |
JP4574158B2 (ja) * | 2003-10-28 | 2010-11-04 | 株式会社半導体エネルギー研究所 | 半導体表示装置及びその作製方法 |
KR100575233B1 (ko) * | 2003-11-04 | 2006-05-02 | 엘지.필립스 엘시디 주식회사 | 액정표시장치 제조 방법 |
KR101090246B1 (ko) * | 2003-12-10 | 2011-12-06 | 삼성전자주식회사 | 박막 트랜지스터 표시판 |
US7372513B2 (en) * | 2003-12-30 | 2008-05-13 | Lg.Philips Lcd Co., Ltd. | Liquid crystal display device and method for fabricating the same |
KR100983586B1 (ko) * | 2003-12-30 | 2010-09-28 | 엘지디스플레이 주식회사 | 액정표시장치 및 이의 제조방법 |
US7217591B2 (en) * | 2004-06-02 | 2007-05-15 | Perkinelmer, Inc. | Method and process intermediate for electrostatic discharge protection in flat panel imaging detectors |
KR101046927B1 (ko) * | 2004-09-03 | 2011-07-06 | 삼성전자주식회사 | 박막 트랜지스터 표시판 |
US7859606B2 (en) | 2004-09-15 | 2010-12-28 | Semiconductor Energy Laboratory Co. Ltd. | Semiconductor device |
US7265003B2 (en) * | 2004-10-22 | 2007-09-04 | Hewlett-Packard Development Company, L.P. | Method of forming a transistor having a dual layer dielectric |
KR101112549B1 (ko) * | 2005-01-31 | 2012-06-12 | 삼성전자주식회사 | 박막 트랜지스터 표시판 |
KR20060114757A (ko) * | 2005-05-02 | 2006-11-08 | 삼성전자주식회사 | 박막 트랜지스터 기판 |
KR20070014715A (ko) * | 2005-07-29 | 2007-02-01 | 삼성전자주식회사 | 개구율이 향상된 어레이 기판 및 이의 제조방법 |
KR101230305B1 (ko) * | 2005-12-08 | 2013-02-06 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
KR101411660B1 (ko) * | 2006-12-28 | 2014-06-27 | 엘지디스플레이 주식회사 | 정전기 방지 소자 및 이를 갖는 유기전계발광소자 |
JP5127234B2 (ja) * | 2007-01-10 | 2013-01-23 | 株式会社ジャパンディスプレイウェスト | 半導体装置、電気光学装置並びに電子機器 |
CN101256297B (zh) * | 2008-03-28 | 2010-06-23 | 昆山龙腾光电有限公司 | 液晶显示装置及其阵列基板和母基板 |
KR101253497B1 (ko) * | 2008-06-02 | 2013-04-11 | 엘지디스플레이 주식회사 | 액정표시장치용 어레이 기판의 제조방법 |
JP5587591B2 (ja) * | 2008-11-07 | 2014-09-10 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP5587592B2 (ja) * | 2008-11-07 | 2014-09-10 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US8716605B2 (en) * | 2010-10-22 | 2014-05-06 | Lg Display Co., Ltd. | Structure for shorting line connecting signal lines of flat panel display device |
KR101210474B1 (ko) * | 2011-10-21 | 2012-12-11 | 실리콘 디스플레이 (주) | 정전기에 강한 센서어레이 |
PE20150181A1 (es) | 2012-06-04 | 2015-02-28 | Opko Biolog Ltd | Variantes de oxm pegilada |
KR102235248B1 (ko) * | 2014-10-20 | 2021-04-05 | 삼성디스플레이 주식회사 | 표시 장치 |
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KR100242437B1 (ko) * | 1996-08-07 | 2000-02-01 | 윤종용 | 액정 모듈 및 그 제조 방법 |
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KR100656900B1 (ko) * | 1999-12-13 | 2006-12-15 | 삼성전자주식회사 | 정전기 방전 구조를 가지는 액정 표시 장치용 박막트랜지스터 기판 및 그 제조 방법 |
KR100709704B1 (ko) * | 2000-05-12 | 2007-04-19 | 삼성전자주식회사 | 액정 표시 장치용 박막 트랜지스터 기판 및 그 제조 방법 |
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KR100695303B1 (ko) * | 2000-10-31 | 2007-03-14 | 삼성전자주식회사 | 제어 신호부 및 그 제조 방법과 이를 포함하는 액정 표시장치 및 그 제조 방법 |
JP4718677B2 (ja) * | 2000-12-06 | 2011-07-06 | 株式会社半導体エネルギー研究所 | 半導体装置及びその作製方法 |
-
2002
- 2002-08-27 KR KR1020020050778A patent/KR100870013B1/ko not_active IP Right Cessation
-
2003
- 2003-08-26 US US10/648,544 patent/US6927420B2/en not_active Expired - Fee Related
- 2003-08-27 TW TW092123613A patent/TWI289718B/zh not_active IP Right Cessation
- 2003-08-27 CN CNB031649815A patent/CN100346218C/zh not_active Expired - Fee Related
- 2003-08-27 JP JP2003302809A patent/JP4662700B2/ja not_active Expired - Fee Related
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2005
- 2005-06-27 US US11/167,497 patent/US7355206B2/en not_active Expired - Fee Related
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1897285B (zh) * | 2005-07-12 | 2010-05-12 | 三星电子株式会社 | 薄膜晶体管阵列面板及制造方法 |
US7888675B2 (en) | 2005-07-12 | 2011-02-15 | Samsung Electronics Co., Ltd. | Thin film transistor array panel and fabrication |
US8173493B2 (en) | 2005-07-12 | 2012-05-08 | Samsung Electronics Co., Ltd. | Thin film transistor array panel and fabrication |
US7745342B2 (en) | 2006-01-02 | 2010-06-29 | Samsung Electronics Co., Ltd. | Display substrate and method of manufacturing the same |
US8008662B2 (en) | 2006-01-02 | 2011-08-30 | Samsung Electronics Co., Ltd. | Display substrate and method of manufacturing the same |
CN103809318A (zh) * | 2014-02-14 | 2014-05-21 | 京东方科技集团股份有限公司 | 一种阵列基板制造方法、阵列基板及显示设备 |
CN104078469A (zh) * | 2014-06-17 | 2014-10-01 | 京东方科技集团股份有限公司 | 一种阵列基板及其制备方法,显示面板、显示装置 |
CN104078469B (zh) * | 2014-06-17 | 2017-01-25 | 京东方科技集团股份有限公司 | 一种阵列基板及其制备方法,显示面板、显示装置 |
US10490573B2 (en) | 2014-06-17 | 2019-11-26 | Boe Technology Group Co., Ltd. | Array substrate, manufacturing method thereof, display panel and display device |
Also Published As
Publication number | Publication date |
---|---|
US20060011920A1 (en) | 2006-01-19 |
JP4662700B2 (ja) | 2011-03-30 |
TW200500763A (en) | 2005-01-01 |
US7355206B2 (en) | 2008-04-08 |
TWI289718B (en) | 2007-11-11 |
CN100346218C (zh) | 2007-10-31 |
KR100870013B1 (ko) | 2008-11-21 |
JP2004088113A (ja) | 2004-03-18 |
US20040113149A1 (en) | 2004-06-17 |
US6927420B2 (en) | 2005-08-09 |
KR20040018784A (ko) | 2004-03-04 |
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