CN1462451A - 具有用于嵌入式非易失性存储器的自测试器件的集成电路及相关测试方法 - Google Patents
具有用于嵌入式非易失性存储器的自测试器件的集成电路及相关测试方法 Download PDFInfo
- Publication number
- CN1462451A CN1462451A CN02801369A CN02801369A CN1462451A CN 1462451 A CN1462451 A CN 1462451A CN 02801369 A CN02801369 A CN 02801369A CN 02801369 A CN02801369 A CN 02801369A CN 1462451 A CN1462451 A CN 1462451A
- Authority
- CN
- China
- Prior art keywords
- test
- storer
- integrated circuit
- type
- data
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
- G11C29/30—Accessing single arrays
- G11C29/32—Serial access; Scan testing
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
- G11C29/20—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits using counters or linear-feedback shift registers [LFSR]
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/38—Response verification devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
- G11C2207/10—Aspects relating to interfaces of memory device to external buses
- G11C2207/104—Embedded memory devices, e.g. memories with a processing device on the same die or ASIC memory designs
Landscapes
- Tests Of Electronic Circuits (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Microcomputers (AREA)
- Read Only Memory (AREA)
- Non-Volatile Memory (AREA)
Abstract
Description
Claims (11)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP01110213 | 2001-04-25 | ||
EP01110213.4 | 2001-04-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1462451A true CN1462451A (zh) | 2003-12-17 |
CN100442395C CN100442395C (zh) | 2008-12-10 |
Family
ID=8177247
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB028013697A Expired - Fee Related CN100442395C (zh) | 2001-04-25 | 2002-04-22 | 具有自测试器件的集成电路及相关测试方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US6876591B2 (zh) |
EP (1) | EP1388150B1 (zh) |
JP (1) | JP2004520673A (zh) |
CN (1) | CN100442395C (zh) |
AT (1) | ATE421149T1 (zh) |
DE (1) | DE60230865D1 (zh) |
WO (1) | WO2002086907A1 (zh) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100334558C (zh) * | 2004-03-23 | 2007-08-29 | 上海华虹集成电路有限责任公司 | 监控仿真芯片内部eeprom的方法 |
CN100356481C (zh) * | 2004-01-30 | 2007-12-19 | 北京中星微电子有限公司 | 一种嵌入式存储器的测试装置 |
CN100369159C (zh) * | 2004-07-20 | 2008-02-13 | 中兴通讯股份有限公司 | 一种闪存存储器的检测方法 |
CN102237145A (zh) * | 2010-04-22 | 2011-11-09 | 联咏科技股份有限公司 | 箝入式存储装置以及其测试方法 |
CN103093834A (zh) * | 2013-01-28 | 2013-05-08 | 上海宏力半导体制造有限公司 | 闪存的可靠性测试方法 |
CN103325421A (zh) * | 2012-03-23 | 2013-09-25 | 上海华虹Nec电子有限公司 | 非挥发性存储器棋盘格测试电路及其检测方法 |
CN103700408A (zh) * | 2014-01-07 | 2014-04-02 | 上海华虹宏力半导体制造有限公司 | 存储器的检测方法 |
CN105373345A (zh) * | 2014-08-19 | 2016-03-02 | 三星电子株式会社 | 存储器设备和模块 |
CN105572565A (zh) * | 2015-12-23 | 2016-05-11 | 中国电子科技集团公司第五十八研究所 | 适用于1553总线协议的内建自测试电路 |
CN106556793A (zh) * | 2016-11-09 | 2017-04-05 | 上海东软载波微电子有限公司 | 芯片测试***及测试方法 |
CN110751978A (zh) * | 2019-10-16 | 2020-02-04 | 上海华虹宏力半导体制造有限公司 | 用于非挥发性存储器的测试校调方法及测试校调电路 |
US10824499B2 (en) | 2014-08-19 | 2020-11-03 | Samsung Electronics Co., Ltd. | Memory system architectures using a separate system control path or channel for processing error information |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030225567A1 (en) * | 2002-03-09 | 2003-12-04 | Koch Stefan Marco | System and method for emulating an embedded non-volatile memory |
KR100442878B1 (ko) * | 2002-07-08 | 2004-08-02 | 삼성전자주식회사 | 온 칩 롬 테스트 장치 및 방법 |
US20060090105A1 (en) * | 2004-10-27 | 2006-04-27 | Woods Paul R | Built-in self test for read-only memory including a diagnostic mode |
TWI260641B (en) * | 2005-01-06 | 2006-08-21 | Prolific Technology Inc | Method for storing compare data in a read-only memory built-in self-test circuit |
US7617425B2 (en) * | 2005-06-27 | 2009-11-10 | Logicvision, Inc. | Method for at-speed testing of memory interface using scan |
US7610528B2 (en) * | 2006-02-14 | 2009-10-27 | Atmel Corporation | Configuring flash memory |
EP2016494A4 (en) * | 2006-02-14 | 2010-02-03 | Atmel Corp | DESCRIPTING AND SETTING FLASH SAVINGS |
KR101028901B1 (ko) * | 2009-02-05 | 2011-04-12 | (주)인디링스 | 메모리 장치, 메모리 관리 장치 및 메모리 관리 방법 |
US9773570B2 (en) | 2013-03-06 | 2017-09-26 | International Business Machines Corporation | Built-in-self-test (BIST) test time reduction |
KR20160071769A (ko) * | 2014-12-12 | 2016-06-22 | 삼성전자주식회사 | 반도체 메모리 장치 및 이를 포함하는 메모리 시스템 |
US11347585B2 (en) * | 2020-07-10 | 2022-05-31 | Micron Technology, Inc. | Compression method for defect visibility in a memory device |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5173906A (en) * | 1990-08-31 | 1992-12-22 | Dreibelbis Jeffrey H | Built-in self test for integrated circuits |
US5883843A (en) * | 1996-04-30 | 1999-03-16 | Texas Instruments Incorporated | Built-in self-test arrangement for integrated circuit memory devices |
US5677913A (en) * | 1996-07-01 | 1997-10-14 | Sun Microsystems, Inc. | Method and apparatus for efficient self testing of on-chip memory |
US5946245A (en) * | 1996-11-27 | 1999-08-31 | Texas Instruments Incorporated | Memory array test circuit and method |
JP2000030483A (ja) * | 1998-07-15 | 2000-01-28 | Mitsubishi Electric Corp | 大規模メモリ用bist回路 |
KR100308621B1 (ko) * | 1998-11-19 | 2001-12-17 | 윤종용 | 반도체 메모리 장치를 위한 프로그램 가능한 내장 자기 테스트 시스템 |
US6651202B1 (en) * | 1999-01-26 | 2003-11-18 | Lsi Logic Corporation | Built-in self repair circuitry utilizing permanent record of defects |
-
2002
- 2002-04-22 CN CNB028013697A patent/CN100442395C/zh not_active Expired - Fee Related
- 2002-04-22 DE DE60230865T patent/DE60230865D1/de not_active Expired - Lifetime
- 2002-04-22 AT AT02724563T patent/ATE421149T1/de not_active IP Right Cessation
- 2002-04-22 JP JP2002584335A patent/JP2004520673A/ja active Pending
- 2002-04-22 EP EP02724563A patent/EP1388150B1/en not_active Expired - Lifetime
- 2002-04-22 US US10/475,371 patent/US6876591B2/en not_active Expired - Fee Related
- 2002-04-22 WO PCT/IB2002/001515 patent/WO2002086907A1/en active Application Filing
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100356481C (zh) * | 2004-01-30 | 2007-12-19 | 北京中星微电子有限公司 | 一种嵌入式存储器的测试装置 |
CN100334558C (zh) * | 2004-03-23 | 2007-08-29 | 上海华虹集成电路有限责任公司 | 监控仿真芯片内部eeprom的方法 |
CN100369159C (zh) * | 2004-07-20 | 2008-02-13 | 中兴通讯股份有限公司 | 一种闪存存储器的检测方法 |
CN102237145A (zh) * | 2010-04-22 | 2011-11-09 | 联咏科技股份有限公司 | 箝入式存储装置以及其测试方法 |
CN103325421A (zh) * | 2012-03-23 | 2013-09-25 | 上海华虹Nec电子有限公司 | 非挥发性存储器棋盘格测试电路及其检测方法 |
CN103093834A (zh) * | 2013-01-28 | 2013-05-08 | 上海宏力半导体制造有限公司 | 闪存的可靠性测试方法 |
CN103700408A (zh) * | 2014-01-07 | 2014-04-02 | 上海华虹宏力半导体制造有限公司 | 存储器的检测方法 |
CN105373345A (zh) * | 2014-08-19 | 2016-03-02 | 三星电子株式会社 | 存储器设备和模块 |
US10824499B2 (en) | 2014-08-19 | 2020-11-03 | Samsung Electronics Co., Ltd. | Memory system architectures using a separate system control path or channel for processing error information |
CN105373345B (zh) * | 2014-08-19 | 2020-11-10 | 三星电子株式会社 | 存储器设备和模块 |
CN105572565A (zh) * | 2015-12-23 | 2016-05-11 | 中国电子科技集团公司第五十八研究所 | 适用于1553总线协议的内建自测试电路 |
CN105572565B (zh) * | 2015-12-23 | 2018-08-24 | 中国电子科技集团公司第五十八研究所 | 适用于1553总线协议的内建自测试电路 |
CN106556793A (zh) * | 2016-11-09 | 2017-04-05 | 上海东软载波微电子有限公司 | 芯片测试***及测试方法 |
CN106556793B (zh) * | 2016-11-09 | 2019-05-31 | 上海东软载波微电子有限公司 | 芯片测试***及测试方法 |
CN110751978A (zh) * | 2019-10-16 | 2020-02-04 | 上海华虹宏力半导体制造有限公司 | 用于非挥发性存储器的测试校调方法及测试校调电路 |
Also Published As
Publication number | Publication date |
---|---|
US20040109370A1 (en) | 2004-06-10 |
US6876591B2 (en) | 2005-04-05 |
DE60230865D1 (de) | 2009-03-05 |
JP2004520673A (ja) | 2004-07-08 |
CN100442395C (zh) | 2008-12-10 |
EP1388150B1 (en) | 2009-01-14 |
EP1388150A1 (en) | 2004-02-11 |
WO2002086907A1 (en) | 2002-10-31 |
ATE421149T1 (de) | 2009-01-15 |
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Legal Events
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: NXP CO., LTD. Free format text: FORMER OWNER: ROYAL PHILIPS ELECTRONICS CO., LTD. Effective date: 20070921 |
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C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20070921 Address after: Holland Ian Deho Finn Applicant after: Koninkl Philips Electronics NV Address before: Holland Ian Deho Finn Applicant before: Koninklike Philips Electronics N. V. |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20081210 Termination date: 20180422 |
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CF01 | Termination of patent right due to non-payment of annual fee |