CN1401116A - 光学信息介质及其应用 - Google Patents
光学信息介质及其应用 Download PDFInfo
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- CN1401116A CN1401116A CN01804997A CN01804997A CN1401116A CN 1401116 A CN1401116 A CN 1401116A CN 01804997 A CN01804997 A CN 01804997A CN 01804997 A CN01804997 A CN 01804997A CN 1401116 A CN1401116 A CN 1401116A
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- Optical Recording Or Reproduction (AREA)
Abstract
本发明提供了一光学信息介质(20),它可借助激光光束(10)用于可擦除记录上。基片(1)撑托着投一些层组成的层叠(2),相变记录层(5)是在第一介电层(4)和第二介电层(6)之间。光吸收层(7)存在于该记录层(5)的近邻,而且是由化学式为QRx的化合物制成,其中Q是元素Si,Ge,Ti,Zr,Hf,Nb或Ta,而R是元素O或N,而且0<x=2.5,以便实现0.8<Ac/Aa<1.50,其中Ac和Aa分别是在从350-450nm选出的激光波长上在处于结晶态和非晶态的记录层(5)中吸收的相应激光量。这样,就可在该光学信息介质制造过程中通过将x调节到一最佳值的方法,在这种短波长范围上实现高数据速率和低数据抖动。
Description
本发明涉及光学信息介质,它可借助具有激光波长的激光光束进行可擦除记录,所述介质具有一基片,而且在该基片上提供有很多层构成的层叠,该叠层包括
记录层,它能在非晶和结晶之间变化,所述记录层被置于第一介电层和第二介电层之间,
光的吸收层,近邻该记录层。
本发明还涉及这种光学信息介质在高速记录方面的应用。
在开头段落中所介绍的那种类型的光学介质可从美国专利US-A-5,652,036中得知。该已知的介质具有一携带着由很多层构成的叠层的基片,包括在开头的段落中所介绍的那些层和另外的一些层。
基于相变原理的光学数据存储介质是有诱惑力的,因为它将直接覆写(DOW)的可能性和高存储密度结合起来,还易于与只读光学数据存储***兼容。相变光学记录涉及利用一聚焦的相当高功率的激光光束在一结晶记录层中形成一些亚微米尺寸的非晶记录标记。在记录信息的过程中,该介质相对于按要记录的信息调制的该聚焦激光光束运动。当该高功率激光光束将该结晶记录层熔融时就会形成记录标记。当该激光光束关闭和/或紧接着相对于该记录层运动时,在该记录层中就发生该熔融标记的淬火,从而在该记录层的曝光区域中就留下一非晶的信息标记,在该记录介质的非曝光区仍然保持结晶。将写上的非晶标记擦除是通过重新结晶的方法来实现的,重新结晶可通过用处于较低功率水平的同一激光器加热而又不使该记录层熔融的方法来完成。该非晶标记代表数据位,它们可,例如,经由基片用一相当低功率的聚焦激光光束来读取。该非晶标记相对于该结晶记录层的反射率的差异就产生一被调制的激光光束,随后就被一检测器按该记录的信息转变成一调制的光电电流。
在相变光学记录方面的最重要的要求之一是高数据速率,高数据速率指的是至少可以用30Mbit/s的速率在该介质中写和重写数据。这样高的数据速率要求该记录介质具有一高的结晶速度,也就是,短的结晶时间。为了确保先前记录的非晶标记在直接覆写的过程中能重新结晶,该记录层必须具有一适当的结晶速度来与该介质相对于该激光光束的速度匹配。如果该结晶速度不是足够的高,则由先前记录产生的代表旧数据的非晶标记就不能在DOW过程中,在重新结晶的意义上被完全擦掉。这就是引起高噪音水平的原因。在高密度记录和高数据速率的光学记录介质中,如在盘形的DVD+RW,红和蓝DVR中,特别要求高结晶速度,这些字母是新一代高密度的
Digital
VersatileDisc+RW和
Digital
Video
Recording光学存储盘的缩写,这里RW是指这种盘的可重写性,而红和蓝是指所用激光的波长。对于这些盘来说,完全的擦除时间(CET)应该最多为60ns。CET被定义为在一结晶环境中对写好的非晶标记的完全结晶所用的擦除脉冲的最小持续时间,这是静态测量的。对于每个120mm的盘具有4.7GB的记录密度的DVD+RW来说,需要33Mbit/s的数据位速率,而对于红-DVR来说,所述的速率为35Mbit/s。对于可重写的相变光学记录***,如蓝-DVR,则要求高于50Mbit/s的用户数据速率。
在相变光学记录介质方面的另一重要要求是获得一高的存储容量,以便这样的介质适于用在高密度记录上,例如,在120mm直径的盘上存储容量要超过3Gbyte。相变光信息介质的存储密度由该标记的径向密度和切向密度决定。该轨迹间距决定该径向密度,也就是,相邻轨迹中心线之间的距离。这意味着,记录在一轨迹上的数据质量受相邻轨迹的影响。该记录标记的形状那时也许会发生畸变,这会导致信号的严重抖动。该切向密度由该通道位长决定,这将由于在使用标准的IPIM层叠时非晶的光吸收大于结晶的光吸收而受到限制。在这种层叠中,I代表一介电层,P代表一相变记录层,而M则代表一反射或镜面层。由此,当用激光照射该记录层时,非晶部分就被加热到一比结晶部分高的温度上。因而,在结晶区域写的标记就小于在非晶区域重写的标记。这样的现象就使信号的抖动增大,这与该通道位长的倒数成比例。为了克服该问题,在该记录层的一专有结晶区域吸收的激光量最好应基本上等于或大于在该记录层中的专有非晶区域吸收的激光量。这些吸收的量分别被缩写成Ac和Aa。
从所述的美国专利US-A-5,652,036中可得知很多可能的层叠排列,如IAIPIM,其中,I,P和M具有上面提及的含义,而A则是代表光的吸收层。该光的吸收层是由介电材料和金属或半导体材料的混合物构成。加入光的吸收层A的结果是使得Ac和Aa之间的差异变得更小,这样就减小了标记的畸变。
已知记录介质的缺点在于,它只适于在大约680nm的相当长的激光波长上进行记录,对于高密度的记录来说最好使用较短的波长,例如小于450nm,因为激光记录斑点的直径与所用的激光波长成正比。较小的激光斑点导致较小的非晶标记,因而导致较高的可能记录密度。由于金属或半导体材料的光色散特性,在波长为400nm时,所述的已知的包括介电材料和金属或半导体材料的光吸收层,一般都具有比680nm波长时高得多的吸收。这使得设计和制造该光学记录介质的裕度变得不希望的小。在该吸收层中对于短波长激光的吸收对该层的成分和厚度上的稍稍变化都是很敏感的,从制造的观点来看,这是不希望的。
本发明的目的在于提供一种在开头段落中描述的那种进行可擦除记录用的光学信息介质,这种介质适于在350-450nm的激光波长上进行高数据速率和高密度记录,而且它还易于制造。
这目的可按下述方法来实现,该光吸收层包括一化学式为QRx的化合物,其中,Q是从由Si,Ge,Ti,Zr,Hf,Nb和Ta组成的组中选出的一元素,而R则是从由O和N组成的组中选出的一元素,而且0<x≤2.5以达到0.8<Ac/Aa<1.50,其中Ac和Aa分别是在从350-450nm范围选出的激光波长上,在处于结晶态和非晶态的记录层中吸收的相应激光量。
上面提及的术语高数据速率记录应理解为,在这里是指该介质相对于该激光光束的线速度至少为7.2m/s,它是按照光盘标准的速度的6倍。重要的参数是上面已被定义的CET。该CET与结晶速率成反比,而它还决定该最大的数据速率。最好,该CET的值应在45ns以下,这对于与该CD速度的8倍相应的线速度9.6m/s来说是必需的,或甚至在35ns以下,这对于与该CD速度的12倍相应的线速度14.4m/s来说是必需的。该介质的抖动应在一低的恒定水平上。因而利用按本发明的光学记录介质是有利的,因为该结晶速率足够快的,足以使得至少在这种速度上不会由于非晶标记直径的变化而使该抖动增大。
该化合物QRx光吸收层的存在确保了在从350-450nm范围选择的波长上Ac基本上等于或大于Aa。这可由改变x来精确调节。例如,在波长400nm上化合物SiOx的复折射率n的虚数部分kλ-400nm就基本上是变量x的光滑函数。当x=0时,则kλ-400nm=2.66,而当x=1时,则kλ-400nm=0.17。该变量k是在该化合物中激光吸收的直接测度。因而该化合物可很好地用作一可调节的光吸收层。为了满足条件0.8<Ac/Aa<1.50,该光吸收层的适当吸收是易于通过改变,例如,Si中的O百分比来实现的。特别是,kλ-400nm对于x的可预言而且连续的依赖性,从制造的观点来看是有利的。因此,可选择一最佳的光吸收层,而且正在结晶区书写的标记基本上具有与正在非晶区覆写的标记相同的大小。这种效果减小了抖动,而且还显著地提高了这种记录介质的存储密度。当波长不是400nm但仍在350-450nm范围内时,作为x的函数的k的依赖关系都是类似的。即使在Ac和Aa基本相等时,用来从该光学信息介质中读出的光学衬比C应当保持在高值上。该光学衬比C被定义为100(Rc-Ra)/Rc,其中Rc和Ra分别是处于结晶和非晶状态的介质的反射率。高的光学衬比是通过该层叠的光学设计来实现的。
当Ac>Aa时就可获得较高的数据速率。在这种情形,当利用具有一给定脉冲持续时间或停留时间的激光照射该记录层时,该记录层的结晶部分就可被加热到一比非晶标记高的温度上。为了擦除非晶标记,该温度必须在结晶温度Tx以上保持一段时间,至少为CET值。因为该结晶衬底获得一比要擦除的非晶标记高的温度,所以热将扩散到该标记,其结果是该标记以一较低的速率冷却,因而将在Tx以上保持一较长时间。因为缓慢的冷却速率,因此在利用相同的停留时间时,该非晶标记可在高于Tx的温度上保持一段时间,这时间等于或大于CET。利用按本发明的具有光吸收层的介质结构,在不降低该CET的条件下,就可实现较高的数据速率。与这相反,Ac基本较Aa低的层叠总导致一快速冷却的结构,也就是,结晶衬底总具有一比非晶标记低的温度。那时热量将从标记扩散到该结晶衬底。用相同的停留时间和功率,标记高于Tx的时间总比CET短,在这种情形,该非晶标记就不能被完全擦除。
在一实施例中,Q为Si或Ge,而R为O。Si是较为可取的,因为它在半导体工业中经常使用而很容易获得。
第三介电层可以存在于光吸收层的近邻远离该记录层一侧。该第三介电层可防止该光吸收层和存在于第三介电层的与该光吸收层侧相反一侧的材料之间的迁移,若有的话。此外,它还可调节该层叠的冷却速率,因而调节书写灵敏度。另外,该第三介电层起着保护屏障的作用,以免受环境的影响,尤其是在该第三介电层存在于远离基片一侧时更是如此。该激光光束可通过第一介电层或第三介电层进入该层叠。
第三介电层的厚度最好在2和200nm之间,更具体地说是在10和100nm之间,以便在保护能力和可制造性之间有一适当的平衡。当该厚度小于2nm时,它的热绝缘可能变差。例如,金属反射层或基片可以存在于近邻第三介电层。因此,该层叠的冷却速率被增大,因而书写能力被增大。若利用的厚度大于200nm,则该层叠的冷却速率就可能变得很低。
该记录层包括一Ge和Te的化合物,例如GeTe。这种相变材料具有一优点,该优点就是具有相当高的光学衬比C。
适于用作记录材料的其它已知材料有,例如,合金:Ge-Sb-Te,In-Se,In-Se-Sb,In-Sb-Te,Te-Ge,Te-Se-Sb,Te-Ge-Se,或Ag-In-Sb-Te。特别有用的是那些由申请者们提交的美国专利US5,876,822所描述的化合物。这些化合物显示出一短的完全擦除时间(CET),它们具有由下述化学式用原子百分数规定的成分:
Ge50xSb40-40xTe60-10x,其中0.166≤x≤0.444。在Ge-Sb-Te的三元相图中,这些化合物位于化合物GeTe和Sb2Te3的连线上,包括化学计量比化合物Ge2Sb2Te5(x=0.445),GeSb2Te4(x=0.286),和GeSb4Te7(x=0.166)。
其它的有用化合物被描述于由申请者们提交的专利US6,127,049中。这些化合物具有由该三元相图Ge-Sb-Te内的一区域所规定的成分,所述的区域是具有下述顶点:P,Q,R,S和T的五边形:
Ge14.2Sb25.8Te60.0 (P)
Ge12.7Sb27.3Te60.0 (Q)
Ge13.4Sb29.2Te57.4 (R)
Ge15.1Sb27.8Te57.1 (S)
Ge13.2Sb26.4Te63.4 (T);
使用这些化合物,就能得到低于50ns的CET值。
其它有用的化合物具有成分:
(GeSb2Te4)1-xTex其中x满足:0.01≤x≤0.37。这些化合物是处于该三元相图中连接GeSb2Te4和Te的结线上,而且是在五边形区域PQRST内。使用这些化合物可获得小于45ns的CET值。
当在上述Ge-Sb-Te化合物中添加直到3.5at.%的氧时,可获得更低的CET值。
上述Ge-Sb-Te化合物的结晶速度或CET值与该记录层的厚度有关。当该层厚度增大时则CET就迅速减小。在该记录层的层厚度大于25nm时,该CET基本上就与其厚度无关了。在35nm以上时,该介质的循环能力(cyclabi1ity)就受到不利的影响。该介质的循环能力是由在大量,例如105次的DOW循环后,光学衬比C的相对变化来度量的。在每一次循环过程中,通过使用激光光束加热,重新结晶就将旧的非晶标记擦除,同时将新的非晶标记写上。在理想情形,该光学衬比C在循环之后仍保持不变。该记录层厚度直到35nm,该循环使用能力实际上都是恒定不变的。由于对CET和循环使用能力的综合要求,该记录层的厚度最好在5与35nm之间,在10与30nm之间将更为可取。具有厚度为10-30nm的记录层的介质在最初的105次DOW循环期间具有一恒定的低抖动。
反射层可存在于该层叠中,该反射层包括至少一种从由Al,Ti,Au,Ag,Cu,Rh,Pt,Pd,Ni,Co,Mn,Cr,Mo,W,Hf和Ta组成的组中选出的金属,并包括其合金。一般来说,这个反射层,如果有的话,是在该层叠的与该层叠的激光进入侧相反的一侧上。首先当激光光束通过该记录层时,该吸收层就可用作反射层,在这种情形,就不需要反射金属层。但是根据光学信息介质的种类可要求一反射金属层来获得充分的绝对反射,以满足它的技术要求。
第一,第二和第三介电层可有ZnS和SiO2的混合物,例如(ZnS)80(SiO2)20,构成。该层也可由SiO2,TiO2,ZnS,Si3N4,AlN和Ta2O5构成。最好利用碳的化合物,如象SiC,WC,TaC,ZrC或TiC。这些材料给出一较高的结晶速度和一比混合物ZnS-SiO2更好的循环能力。
如早先已提及的那样,该第二介电层防止光吸收层和记录层之间的迁移,或由扩散形成合金。此外,由于干涉效应,它的厚度可精细调整Ac和Aa的比例。该厚度总计最好在2和75nm之间,在15和60nm之间则更为可取。比2nm更小的厚度可引起裂缝的形成,因而减小循环使用能力。大于75nm的厚度可减小该记录层的冷却速率和减小该光吸收层的效果。
该相变记录层可通过真空淀积技术,如电子束蒸发,化学汽相淀积,离子涂敷技术或溅射,涂敷在基片上。如此淀积的层是非晶的,因而显示出低的反射率。为了构成一具有高反射率的合适的记录层,首先必须使该层完全结晶,通常称此为初始化。为此目的,可将该记录层在炉中加热到化合物Ge-Te,Ge-Te-O或Ge-Te-N的结晶温度以上,如190℃。另一方面合成树脂基片,如聚碳酸酯(polycarbonate),可用足够功率的激光光束加热。这可在例如记录器中实现,在这情形,该激光光束扫描该运动的记录层。那时该非晶层就被局部加热到使该层结晶所需要的温度上,而该基片却并不经受不利的热负荷。
该光吸收层可通过溅射技术涂敷在基片上。可应用具有所需氧或氮含量的Si,Ge,Ti,Zr,Hf,Nb或Ta的溅射靶,或使用所述元素的纯靶,由此控制在溅射气体中的氧或氮的含量。实际上,溅射气体中的氧或氮的体积浓度典型地将在近乎0和近似30%之间。
例如,该信息介质基片由聚碳酸脂(PC),聚甲基丙烯酸甲酯(polymethyl methacrylate)(PMMA),非晶聚烯烃(polyolefin)或玻璃构成。在一典型例子中,该基片被做成盘形并具有120nm的直径和0.1、0.6或1.2mm的厚度。当使用0.6或1.2mm的基片时,这些层可从第一介电层开始涂敷在这基片上。如果该激光经由基片进入该层叠,则所述基片应当至少对该激光波长是透明的。在该基片上的层叠层也可用相反的顺序涂敷,也就是从第三介电层开始,在此情形该激光光束将不通过该基片进入该层叠。可选择性地将最外面的透明层置于该层叠上作为保护层,将下面的层与环境隔开。这种层可由上述基片材料之一或透明树脂构成,例如由UV光固化的厚度为例如0.1mm的聚甲基丙烯酸酯构成。如果该激光光束经由这种透明层的入射面进入该层叠,则该基片可以是不透明的。
该光学信息介质的基片在该记录层侧的表面最好设有可用激光光束进行光学扫描的伺服轨道。这种伺服轨道通常是由螺旋形沟槽构成,它是在注塑或模压过程中借助模具形成在基片上的。另一方面,这种沟槽也可在复制过程中形成在一合成树脂层上,例如UV光固化的丙烯酸脂(acrylate)层上,它是单独地提供在基片上的。在高密度的记录过程中,这样的沟槽具有例如0.5-0.8μm的间距和大约半个间距的宽度。
按照本发明的该光学信息介质将通过一示范实施例和借助下述附图作更详细的说明,
图1表示具有MIPIAI结构层叠的光学信息介质的横截面视图。
实施例
在图1中可通过激光光束(10)进行可擦除记录的光学信息介质(20)具有一基片(1)和在基片上的一些层的层叠(2)。该层叠(2)具有一能在非晶和结晶之间变化的记录层(5)。该记录层(5)***在第一介电层(4)和第二介电层(6)之间。
该第一和第二介电层(4,6)是由(ZnS)80(SiO2)20制成,并分别具有20nm和49nm的厚度。
光吸收层(7)存在近邻于该记录层(5),并具有20nm的厚度。该光吸收层(7)包括一化合物,其化学式为SiO0.7。它在405nm的激光波长上实现了Ac/Aa=0.85。在不存在这种光吸收层(7)时,Ac/Aa=0.71,导致了相当多的记录标记的畸变。
第三介电层(8)存在近邻于该光的吸收层(7)远离记录层(5)的一侧。该第三介电层(8)的厚度为55nm。该记录层是由GeTe构成。
该层叠中存在一由Al制作的反射层(3),该反射层具有100nm的厚度。在这样的层叠中,在405nm的激光波长上,该非晶的反射率Ra=4%,而结晶的反射率Rc=14%。
基片1为一聚碳酸酯的盘形基片,它具有120nm的直径和0.6nm的厚度。
任选的保护层(9),由UV固化树脂Daicure SD415制成,其厚度为100μm,该层置于该第三介电层的近邻。
按照本发明,提供有一用于高密度可擦除记录的光学信息介质,如DVR-蓝,它在相变材料制作的记录层近邻设有一光吸收层。该光吸收层的激光吸收易于在制作过程中通过改变其氧或氮的含量来调节。这为了实现0.8<Ac/Aa<1.50,其中Ac和Aa为在从范围350-450nm中选出的激光波长上,在结晶态和非晶态的记录层中吸收的相应激光量。这样,在所述的波长范围上就可获得高数据速率和高记录速度。
Claims (10)
1.一种光学信息介质(20),它可借助具有激光波长的一激光束(10)进行可擦除记录,所述介质(20)具有一基片(1),而且在该基片上提供有很多层的层叠(2),该层叠(2)包括
记录层(5),它能在非晶态和结晶态之间变化,所述记录层被置于第一介电层(4)和第二介电层(6)之间,及
光的吸收层(7),近邻在该记录层(5),
其特征在于,该光吸收层(7)包括一化学式为QRx的化合物,其中,Q是从由Si,Ge,Ti,Zr,Hf,Nb和Ta组成的组中选出的一元素,而R是从由O和N组成的组中选出的一元素,而且0<x≤2.5,以达到0.8<Ac/Aa<1.50,其中Ac和Aa分别是在从350-450nm选出的激光波长上在处于结晶态和非晶态的记录层(5)中吸收的相应激光量。
2.权利要求1所述的光信息介质(20),其特征在于:Q是从由Si和Ge构成的组中选择的一元素。
3.权利要求1或2所述的光信息介质(20),其特征在于:R是元素O。
4.权利要求1,2或3所述的光信息介质(20),其特征在于:激光波长是从范围375-425nm中选择的。
5.1-4的任一权利要求所述的光信息介质(20),其特征在于:第三介电层(8)置于近邻光吸收层(7)远离记录层(5)的一侧。
6.权利要求5所述的光信息介质(20),其特征在于:该第三介电层(7)的厚度是在2和200nm之间。
7.权利要求1或5所述的光信息介质(20),其特征在于:该记录层(5)包括Ge和Te的化合物。
8.权利要求1或5所述的光信息介质(20),其特征在于:该记录层(5)包括Ge,Sb和Te的化合物。
9.权利要求1或5所述的光信息介质(20),其特征在于:在该层叠中存在一反射层(3),该反射层包括至少一种从由Al,Ti,Au,Ag,Cu,Rh,Pt,Pd,Ni,Co,Mn,Cr,Mo,W,Hf和Ta组成的组中选出的金属,包括其合金。
10.光学信息介质(20)在高速记录方面的应用,其中激光光束和该介质之间的相对速度至少为7.2m/s,其特征在于:可使用1-9中任一权利要求所述的光学信息介质(20)。
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CN100403405C (zh) * | 2004-10-21 | 2008-07-16 | 株式会社日立制作所 | 相变存储器 |
CN100411036C (zh) * | 2004-10-01 | 2008-08-13 | 株式会社东芝 | 相变光学记录介质 |
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CN1319054C (zh) * | 2002-10-28 | 2007-05-30 | 松下电器产业株式会社 | 光学信息记录介质及其制造方法 |
WO2004057593A1 (en) * | 2002-12-19 | 2004-07-08 | Koninklijke Philips Electronics N.V. | Writable optical record carrier |
KR100587322B1 (ko) * | 2003-01-14 | 2006-06-08 | 엘지전자 주식회사 | 고강성 광 디스크의 제조 방법 |
JP2005071450A (ja) * | 2003-08-22 | 2005-03-17 | Tdk Corp | 光記録媒体及びその製造方法、並びに、光記録媒体に対するデータ記録方法及びデータ再生方法 |
KR101105765B1 (ko) * | 2005-05-21 | 2012-01-17 | 엘지전자 주식회사 | 공기조화기 |
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CN100411036C (zh) * | 2004-10-01 | 2008-08-13 | 株式会社东芝 | 相变光学记录介质 |
CN100403405C (zh) * | 2004-10-21 | 2008-07-16 | 株式会社日立制作所 | 相变存储器 |
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ZA200206471B (en) | 2003-11-13 |
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BR0108370A (pt) | 2003-03-11 |
US6901044B2 (en) | 2005-05-31 |
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