CN1400636A - 研磨半导体晶片的复合研磨垫及其制作方法 - Google Patents
研磨半导体晶片的复合研磨垫及其制作方法 Download PDFInfo
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B—PERFORMING OPERATIONS; TRANSPORTING
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Abstract
一种研磨半导体晶片的复合研磨垫及其制作方法;先提供一表面包含一粘着层以及复数个硬质,研磨材质的第一研磨垫,然后将部分的第一研磨垫打孔,以去除部分设于该第一研磨垫表面的硬质研磨材质,并形成复数个穿透该第一研磨垫的孔洞;接着提供一表面包含一粘着层以及复数个软质研磨材质的第二研磨垫,将部分设于该第二研磨垫表面的软质研磨材质去除,但保留该粘着层,并且该第二研磨垫表面未被去除的软质研磨材质完全对应于第一研磨垫中孔洞形成的位置;最后将第一研磨垫粘贴于第二研磨垫的表面,以形成一表面包含有硬质及软质研磨材质交错分布形成的图案的复合研磨垫;本发明同时具有较佳的研磨速率以及较好的研磨效果,可以仅以一次研磨程序完成平坦化制程,节省化学机械研磨制程所需的时间与耗材成本。
Description
技术领域
本发明涉及半导体的制作,尤其是一种用于化学机械研磨(chemicalmechanical polishing)制程的研磨半导体晶片的复合(composite)研磨垫及其制作方法。
背景技术
目前,多层金属化制程(multilevel metallization process),这种利用复数层的金属内连线层以及介电常数较低的介电材料(dielectrics),来将半导体晶片上的各个半导体元件彼此串接起来而完成整个堆叠化的回路架构,已被广泛地应用在超大型集成电路(very large scale integration,VLSI)的制程上。然而在一般制程中,这些金属线及半导体元件会使集成电路的表面呈现高低起伏的陡峭形貌(severe topography),增加后续在进行沉积或图案转移(pattern transfer)制程时,产生有突悬(overhang)、孔洞(void)或者聚焦不易以及蚀刻困难等缺点。所以在进入深次微米的半导体制程之后,半导体业者大多会使用平坦化效果较佳的化学机械研磨法来达到半导体晶片表面的全面平坦化。
请参考图1,图1为一半导体晶片10的结构示意图。半导体晶片10包含有一基底12,一金属层14设于基底12之上以及一介电层16设于基底12的表面并覆盖金属层14。请考图2,图2为一***铺于研磨台22之上,一半导体晶片研磨头28,用以将半导体晶片10按压于研磨垫24之上,一研磨液供应装置30,用以供给研磨半导体晶片10的研磨液,以及一打磨器32(conditioner),用来调节研磨垫24表面的研磨液的分布状况,同时清除残留于研磨垫24表面的研磨碎屑。请参考图3与图4,图3为习知的研磨垫24的俯视图,而图4则为图3沿4-4切线方向的研磨垫24的剖视图。研磨垫24的表面设有复数条同心圆式的沟槽26,研磨液则由研磨液供应装置30自研磨台22上方往下滴到研磨垫24的表面,并通过沟槽26以及调节器32的导引而使研磨液能均匀分布于研磨垫24表面。
***方向移动,使半导体晶片10的正面得到较佳的研磨效果。如图5所示,在完成化学机械研磨制程之后,半导体晶片10具有一全面平坦化的表面。
一般来说,使用于金属导线CMP的研磨垫包括硬质(例如:IC-1000)以及软质(例如:POLITEX)两种不同硬度的研磨垫,前者可以提供较快的研磨速率以及较好的平坦化效果,但是不能避免刮伤(Scratch)问题的发生;后者虽然可以避免刮伤问题并提供较细致的研磨效果以及良好的洗净表现(cleaning performance),却会导致导线中间低陷(Dishing)的问题。因此在***坦化制程,所以必须分别进行两次研磨程序,因而需要付出较高的时间成本以及研磨垫的消耗成本,严重降低化学机械研磨程的效率。
发明内容
因此本发明的主要目的在提供一种用于化学机械研磨制程的研磨半导体晶片的复合(composite)研磨垫及其制作方法。,以解决上述的问题。
本发明提供一种研磨半导体晶片的复合(composite)研磨垫及其制作方法。该方法是先提供一表面包含一粘着层以及复数个硬质(hard)研磨材质的第一研磨垫,然后将部分的第一研磨垫打孔(punch off),以去除部分设于该第一研磨垫表面的硬质研磨材质,并形成复数个穿透该第一研磨垫的孔洞。接着提供一表面包含一粘着层以及复数个软质(soft)研磨材质的第二研磨垫,将部分设于该第二研磨垫表面的软质研磨材质去除,但保留该粘着层,并且该第二研磨垫表面未被去除的软质研磨材质完全对应于第一研磨垫中孔洞形成的位置。最后将第一研磨垫粘贴(stick)于第二研磨垫的表面,以形成一表面包含有硬质及软质研磨材质交错分布形成的图案(pattern)的复合研磨垫。
由于本发明的研磨垫表面包含有硬质及软质研磨材质交错分布形成的图案(pattern),因此该复合研磨垫同时具有较佳的研磨速率以及较好的研磨效果,可以仅以一次研磨程序完成平坦化制程,节省化学机械研磨制程所需的时间与耗材成本。
附图说明
图1为习知的半导体晶片的剖面图;
图2为习知化学机械研磨装置的结构示意图;
图3为习知研磨垫的俯视图;
图4则为图3沿4-4切线方向的研磨垫的剖视图;
图5为图1的半导体晶经平坦化制程之后的剖视图;
图6至图10为本发明制作复合研磨垫的方法示意图;
图11至图13本发明的复合研磨垫的第二、第三以及第四实施例的俯视图。
图示的符号说明
10半导体晶片 12基底
14金属层 16介电层
20化学机械研磨装置 22研磨台
24研磨垫 26沟槽
28研磨头 30研磨液供应装置
32打磨器
40第一研磨垫 42粘着层
44、56、62、68硬质研磨材质
46孔洞 48第二研磨垫
50、58、64、70软质研磨材质
52、54、60、66复合研磨垫
具体实施方式
请参考图6至图10,图6至图10为本发明制作一种复合(composite)研磨垫的方法示意图。如图6所示,本发明是先提供一第一研磨垫40,且第一研磨垫40表面包含一粘着层42,以及复数个硬质(hard)研磨材质44设于粘着层42上。然后如图7所示,将部分的第一研磨垫40打孔(punchoff),以去除部分设于第一研磨垫40表面的硬质研磨材质44,并形成复数个穿透第一研磨垫40的孔洞46。
如图8所示,接着提供一第二研磨垫48,且第研磨垫48表面包含一粘着层42,复数个软质(soft)研磨材质50附着于粘着层42上。然后如图9所示,将部分设于第二研磨垫48表面的软质研磨材质50去除,但保留粘着层42,并且第二研磨垫48表面未被去除的软质研磨材质50完全对应于第一研磨垫40中孔洞46形成的位置。
最后如图10所示,将第一研磨垫40粘贴(stick)于第二研磨垫48的表面,以形成一复合(composite)研磨垫52。另外,本发明还可以先将复数个软质研磨材质50设于粘着层42上,再将复数个硬质研磨材质44设于粘着层42上。
在依据本发明的方法并完成上述的步骤后,复合研磨垫52表面将包含有沿着复合研磨垫52表面的横轴(X)与纵轴(Y)交错分布的硬质44及软质研磨材质50,因此复合研磨垫52同时具有较佳的研磨速率以及较好的研磨效果。
请参考图11至图13,图11至图13是本发明的复合研磨垫的第二、第三以及第四实施例的俯视图。如图11所示,复合研磨垫54表面包含有硬质56及软质研磨材质58沿着复合研磨垫54表面不同半径的同心圆交错分布而形成的图案。如图12所示,复合研磨垫60表面包含有硬质62及软质研磨材质64沿着复合研磨垫60表面不同半径的同心圆交错分布而形成的图案,且各硬质62与软质研磨材质64分别形成一环状物。如图13所示,复合研磨垫66表面包含有硬质68及软质研磨材质70沿着复合研磨垫66表面的径向方向交错分布而形成的图案。
由于利用本发明的制作所完成的复合研磨垫,如图10至图13所示,其表面将同时包含有硬质与软质研磨材质,因此可通过硬质与软质研磨材质的分布面积比例(area ratio)以及分布方式来调整研磨速率(removal rate),来增进被研磨的半导体晶片表面的均匀化(uniformity),并提高产能(throughput)。复合研磨垫完成后,安置于一化学机械研磨机台中,该研磨机台另包含一打磨器(conditioner),用来调节于复合研磨垫表面的研磨液的分布状况,同时清除残留于复合研磨垫表面的研磨碎屑。
相较于***坦化制程,本发明制作的复合式研磨垫表面包含有硬质及软质研磨材质交错分布形成的图案(pattern),因此该复合研磨垫同时具有较佳的研磨速率以及较好的研磨效果,可以仅以一次研磨程序完成平坦化制程,节省化学机械研磨制程所需的时间与耗材成本。
以上所述仅为本发明的较佳实施例,凡依本发明申请专利范围所做的均等变化与修饰,皆应属本发明专利的涵盖范围。
Claims (20)
1.一种研磨半导体晶片的复合研磨垫的制作方法,其特征是:该方法包含:
提供一第一研磨垫,且该第一研磨垫表面包含一粘着层,复数个硬质研磨材质设于该粘着层上;
将部分的第一研磨垫打孔,以去除部分设于该第一研磨垫表面的硬质研磨材质,并形成复数个穿透该第一研磨垫的孔洞;
提供一第二研磨垫,且该第二研磨垫表面包含一粘着层,复数个软质研磨材质附着于该粘着层上;
将部分设于该第二研磨垫表面的软质研磨材质去除,但保留该粘着层,并且该第二研磨垫表面未被去除的软质研磨材质完全对应于第一研磨垫中孔洞形成的位置;以及
将第一研磨垫粘贴于第二研磨垫的表面,以形成一复合研磨垫;
其中该复合研磨垫表面包含有硬质及软质研磨材质交错分布形成的图案,使该复合研磨垫同时具有较佳的研磨速率以及较好的研磨效果。
2.如权利要求1所述的方法,其特征是:该图案为硬质与软质研磨物沿着该复合研磨垫表面的横轴(X)与纵轴(Y)交错分布而形成。
3.如权利要求1所述的方法,其特征是:该图案为硬质与软质研磨材质分别形成一环状物,并沿着该复合研磨垫表面不同半径的同心圆交错分布而形成。
4.如权利要求1所述的方法,其特征是:该图案为硬质与软质研磨材质沿着该复合研磨垫表面的径向方向交错分布而形成。
5.如权利要求1所述的方法,其特征是:该复合研磨垫表面的硬质与软质研磨材质分布面积比例用来调整研磨速率,增进被研磨的半导体晶片表面的均匀化。
6.如权利要求1所述的方法,其特征是:该复合研磨垫安置于一化学机械研磨机台中,该研磨机台另包含一打磨器,用来调节于复合研磨垫表面的研磨液的分布状况,同时清除残留于该复合研磨垫表面的研磨碎屑。
7.一种改善半导体晶片的复合研磨垫研磨效率的方法,其特征是:该方法包含:
提供一第一研磨垫,且该第一研磨垫表面包含一粘着层,复数个第一研磨材质设于该粘着层上;
将部分的第一研磨垫打孔,以去除部分设于该第一研磨垫表面的第一研磨材质,并形成复数个穿透该第一研磨垫的孔洞;
提供一第二研磨垫,且该第二研磨垫表面包含一粘着层,复数个第二研磨材质附着于该粘着层上;
将部分设于该第二研磨垫表面的第二研磨材质去除,但保留该粘着层,并且该第二研磨垫表面未被去除的第二研磨材质完全对应于第一研磨垫中孔洞形成的位置;以及
将第一研磨垫粘贴于第二研磨垫的表面,以形成一复合研磨垫;
其中该复合研磨垫表面包含有第一及第二研磨材质交错分布形成的图案,使该复合研磨垫同时具有较佳的研磨速率以及较好的研磨效果。
8.如权利要求7所述的方法,其特征是:第一研磨材质的硬度大于第二研磨材质。
9.如权利要求7所述的方法,其特征是:第二研磨材质的硬度大于第一研磨材质。
10.如权利要求7所述的方法,其特征是:该图案为第一与第二研磨材质沿着该复合研磨垫表面的横轴(X)与纵轴(Y)交错分布而形成。
11.如权利要求7所述的方法,其特征是:该图案为第一与第二研磨材质分别形成一环状物,并沿着该复合研磨垫表面不同半径的同心圆交错分布而形成。
12.如权利要求7所述的方法,其特征是:该图案为第一与第二研磨材质沿着该复合研磨垫表面的径向方向交错分布而形成。
13.如权利要求7所述的方法,其特征是:该复合研磨垫表面的第一与第二研磨材质分布面积比例用来调整研磨速率,增进被研磨的半导体晶片表面的均匀化。
14.如权利要求7所述的方法,其特征是:该复合研磨垫安置于一化学机械研磨机台的中,该研磨机台另包含一打磨器,用来调节于复合研磨垫表面的研磨液的分布状况,同时清除残留于该复合研磨垫表面的研磨碎屑。
15.一种研磨半导体晶片的复合研磨垫,其特征是:该复合研磨垫包括一第一研磨垫及一第二研磨垫,该第一研磨垫粘贴设于该第二研磨垫的表面,其中:
该第一研磨垫,其表面包含一粘着层以及复数个第一研磨材质设于该粘着层上,该第一研磨垫上还包括复数个穿透该第一研磨垫的孔洞;
该第二研磨垫,其表面包含一粘着层以及复数个第二研磨材质设于该粘着层上,并且该第二研磨材质完全对应于第一研磨垫中孔洞形成的位置;
其中该复合研磨垫表面包含有第一及第二研磨材质交错分布形成的图案。
16.如权利要求15所述的复合研磨垫,其特征是:第一研磨材质的硬度大于第二研磨材质。
17.如权利要求15所述的复合研磨垫,其特征是:第二研磨材质的硬度大于第一研磨材质。
18.如权利要求15所述的复合研磨垫,其特征是:该图案为第一与第二研磨材质沿着该复合研磨垫表面的横轴(X)与纵轴(Y)交错分布。
19.如权利要求15所述的复合研磨垫,其特征是:该图案为第一与第二研磨材质分别形成一环状物,并沿着该复合研磨垫表面不同半径的同心圆交错分布。
20.如权利要求15所述的复合研磨垫,其特征是:该图案为第一与第二研磨材质沿着该复合研磨垫表面的径向方向交错分布。
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US09/682,137 | 2001-07-26 | ||
US09/682,137 US6544373B2 (en) | 2001-07-26 | 2001-07-26 | Polishing pad for a chemical mechanical polishing process |
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