CN1389415A - Formula and prepn process of glass ceramics for HF chip inductor - Google Patents
Formula and prepn process of glass ceramics for HF chip inductor Download PDFInfo
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- CN1389415A CN1389415A CN 02124131 CN02124131A CN1389415A CN 1389415 A CN1389415 A CN 1389415A CN 02124131 CN02124131 CN 02124131 CN 02124131 A CN02124131 A CN 02124131A CN 1389415 A CN1389415 A CN 1389415A
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- cao
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- 239000002241 glass-ceramic Substances 0.000 title claims abstract description 18
- 238000002360 preparation method Methods 0.000 claims abstract description 6
- 239000011521 glass Substances 0.000 claims description 39
- 239000000843 powder Substances 0.000 claims description 13
- 239000006063 cullet Substances 0.000 claims description 12
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 10
- 229910010293 ceramic material Inorganic materials 0.000 claims description 10
- 238000000498 ball milling Methods 0.000 claims description 6
- 239000012153 distilled water Substances 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 6
- 230000004927 fusion Effects 0.000 claims description 6
- 238000000227 grinding Methods 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 239000000155 melt Substances 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 238000000465 moulding Methods 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims 1
- 238000005245 sintering Methods 0.000 abstract description 6
- 238000002156 mixing Methods 0.000 abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 239000000919 ceramic Substances 0.000 abstract 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- 238000003825 pressing Methods 0.000 description 8
- 239000006112 glass ceramic composition Substances 0.000 description 7
- 239000003989 dielectric material Substances 0.000 description 5
- 239000011230 binding agent Substances 0.000 description 4
- 238000005469 granulation Methods 0.000 description 4
- 230000003179 granulation Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000012856 packing Methods 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 4
- 238000005303 weighing Methods 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- GEIAQOFPUVMAGM-UHFFFAOYSA-N Oxozirconium Chemical compound [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- 239000012752 auxiliary agent Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000009766 low-temperature sintering Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
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-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C4/00—Compositions for glass with special properties
- C03C4/14—Compositions for glass with special properties for electro-conductive glass
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C10/00—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
- C03C10/0054—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing PbO, SnO2, B2O3
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Dispersion Chemistry (AREA)
- Glass Compositions (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
The formula of nucleated glass ceramics for high-frequency chip inductor comprises five components of CaO, B2O3, SiO2, ZnO and P2O5, and their mixing ratio is: CaO 25-60 wt%, B2O3 10-50 wt%, SiO2 10-60 wt%, ZnO 1-10 wt% and P2O5 1-5 wt%. Said invented nucleated galss ceramics product possesses low dielectric constant (epsilon=4.9-5.5,1MHz), and its sintering temp. is lower (750-850 deg.C). The present invention also provides its preparation method.
Description
Technical field
The present invention relates to prescription of a kind of glass ceramics for HF chip inductor and preparation method thereof, belong to the stupalith field.
Background technology
Miniaturization, mobile, digitizing and high frequencyization have become current electronic product main development tendency.Along with the continuous development of microelectronics, mobile phone, hand-held computer, products such as large color screen movement are constantly to the high frequency development, and it is extremely urgent to produce the electronic devices and components that are suitable for high frequency, ultra-high frequency application.Chip inductor is exactly one of three major types passive element wherein, and it mainly is divided into two classes: multi-layer type chip inductor and wire-wound chip inductor device.In market that the expert did was estimated, both portions were respectively 60% and 40%, and along with the development of technology, the former will increase by shared proportion gradually.For many years, owing to aspect reasons such as inductor structure and materials, its development seriously lags behind the development of other two classes passive elements, has influenced the overall development of electronic product.
The major advantage of lamellar inductor (MLCI) has: volume is little; The reliability height; Magnetic shielding is good; Be suitable for surface mounting (SMT) and automatic assembling etc.Many electronic products all be unable to do without lamellar inductor, as notebook, cell-phone, beeper, large-screen color TV movement etc.The application of lamellar inductor comprises: (1) and the synthetic LC wave filter of electric capacity; (2) conduct exchanges obstructing instrument in active device (as transistor); (3) be used for matching circuit; (4) as anti-electromagnetic interference (EMI) wave filter.Make chip inductor and mainly contain two kinds of materials: electrode materials and dielectric material.Electrode materials generally adopts argent (Ag) or silver-palladium alloy (Ag-Pd), if adopt argent, dielectric material requires sintering below 900 ℃; If dielectric material then adopts silver-colored palladium electrode at 1000 ℃ of following sintering.From present industrialized present situation, the chip inductor dielectric material can only be used for lower frequency, mainly comprises being applied to 300MHz with the ferrite dielectric material of lower frequency and stupalith and the ferritic matrix material that is applied to the low-k in the high-frequency range (500MHz-2GHz).
Summary of the invention
The purpose of this invention is to provide the devitrified glass ceramics that a kind of low-temperature sintering can be used for high-frequency chip inductor.
Ceramic material of microcrystalline glass of the present invention is by CaO, B
2O
3, SiO
2, ZnO, P
2O
5Five kinds of one-tenth are grouped into, and the proportioning of each composition is:
CaO 25-60wt％ B
2O
3 10-50wt％ SiO
2 10-60wt％
ZnO 1-10wt％ P
2O
5 1-5wt％
Its preparation process is:
1. get chemical pure CaO, B by the prescription scale
2O
3, SiO
2, ZnO, P
2O
5Ball milling 2-6 hour, mixed the back, drying;
2. in alumina crucible, be incubated 2-4 hour down, make its complete fusion and homogenizing in 1300-1400 ℃;
3. the melts in the crucible is quenched and obtained transparent glass cullet body into distilled water;
4. gained glass cullet body obtains the glass powder that median size is 0.5-2.0 μ m through wet ball grinding (with oxygen zirconium abrading-ball), is ceramic material of microcrystalline glass of the present invention;
5. use the ceramic material of microcrystalline glass powder that makes through under 750-850 ℃ of temperature, being incubated 1-4 hour after the moulding, promptly get devitrified glass ceramics.
The characteristics of ceramic material of microcrystalline glass of the present invention:
(1) this glass ceramic material is at (750 ℃-850 ℃) dense sintering, and the microtexture of sintered compact is made up of the fine-grain of a large amount of 50-100nm, a small amount of glassy phase and pore, is a kind of typical devitrified glass ceramics, as Fig. 1.
(2) utilize the prepared devitrified glass ceramics of glass ceramic material of the present invention have low specific inductivity (ε=4.9-5.5,1MHz) and dielectric loss (tan δ=0.001-0.0025,1MHz).
(3) the present invention is by adding ZnO and P in prescription
2O
5Deng auxiliary agent, can reduce the sintering temperature of devitrified glass ceramics, promote the growth of crystalline forming core.
(4) B by one of main component in the control prescription
2O
3Content can reduce the high temperature viscosity of glass, help to reduce the sintering temperature of material.
(5) ceramic material of microcrystalline glass of the present invention's preparation can burn with the silver electrode of low-resistivity well altogether, as shown in Figure 2.
Description of drawings
Fig. 1 is for removing the devitrified glass ceramics section of glass through excessive erosion.
Fig. 2 is ceramic material of microcrystalline glass and the silver-colored optical microstructure at interface that burns altogether.
Embodiment
Embodiment 1
Weighing CaO (40wt%) by weight percentage, B
2O
3(18wt%), SiO
2(38wt%), ZnO (2.5wt%) and P
2O
5(1.5wt%).Through 3 hours batch mixings of ball milling evenly after, 70 ℃ of oven dry, the platinum crucible of packing into, fusion cast glass (1350 ℃ are incubated 2 hours) is quenched fused glass in the distilled water, obtains transparent glass cullet body.The glass cullet body is made that through wet ball grinding (glass and proportion of ethanol are 1: 1,24 hours time) powder is that median size is the glass powder NO1 of 1.0 μ m, promptly obtains glass ceramic material of the present invention.After granulation (ratio of glass ceramic material powder and 5% polyvinyl butyral is 60/40) drying, dry-pressing formed at 1.5 tons pressure.The dry-pressing sheet is earlier 550 ℃ of binder removals (being incubated 4 hours), and (10 ℃ of rate of heating/min) also are incubated 2 hours, promptly obtain the good devitrified glass ceramics of dielectric properties, and are as shown in table 1 to be heated to 850 ℃ then rapidly.
Embodiment 2:
Weighing CaO (42wt%) by weight percentage, B
2O
3(31wt%), SiO
2(24wt%), ZnO (0.5wt%) and P
2O
5(2.5wt%).Through 3 hours batch mixings of ball milling evenly after, 70 ℃ of oven dry, the platinum crucible of packing into, fusion cast glass (1400 ℃ are incubated 2 hours) is quenched fused glass in the distilled water, obtains transparent glass cullet body.The glass cullet body through wet ball grinding (glass and proportion of ethanol are 1: 1,24 hours time), is promptly obtained glass ceramic powder NO2 of the present invention.After granulation (ratio of glass ceramic material powder and 5% polyvinyl butyral is 60/40) drying, dry-pressing formed at 1.5 tons pressure.The dry-pressing sheet is earlier 550 ℃ of binder removals (being incubated 4 hours), and (10 ℃ of rate of heating/min) also are incubated 1.5 hours, can obtain the good devitrified glass ceramics of dielectric properties, and are as shown in table 1 to be heated to 780 ℃ then rapidly.
Embodiment 3:
Weighing CaO (46wt%) by weight percentage, B
2O
3(26wt%), SiO
2(23wt%), ZnO (3.5wt%) and P
2O
5(1.5wt%).Through 3 hours batch mixings of ball milling evenly after, 70 ℃ of oven dry, the platinum crucible of packing into, fusion cast glass (1380 ℃ are incubated 2 hours) is quenched fused glass in the distilled water, obtains transparent glass cullet body.The glass cullet body through wet ball grinding (glass and proportion of ethanol are 1: 1,24 hours time), is promptly obtained glass ceramic powder NO3 of the present invention.After granulation (ratio of glass ceramic material powder and 5% polyvinyl butyral is 60/40) drying, dry-pressing formed at 1.5 tons pressure.The dry-pressing sheet is earlier 550 ℃ of binder removals (being incubated 4 hours), and (10 ℃ of rate of heating/min) also are incubated 2 hours, can obtain the good devitrified glass ceramics of dielectric properties, and are as shown in table 1 to be heated to 800 ℃ then rapidly.
Embodiment 4:
Weighing CaO (50wt%) by weight percentage, B
2O
3(10wt%), SiO
2(40wt%), ZnO (2.5wt%) and P
2O
5(1.5wt%).Through 3 hours batch mixings of ball milling evenly after, 70 ℃ of oven dry, the platinum crucible of packing into, fusion cast glass (1400 ℃ are incubated 2 hours) is quenched fused glass in the distilled water, obtains transparent glass cullet body.The glass cullet body through wet ball grinding (glass and proportion of ethanol are 1: 1,24 hours time), is promptly obtained glass ceramic powder NO4 of the present invention.After granulation (ratio of glass ceramic material powder and 5% polyvinyl butyral is 60/40) drying, dry-pressing formed at 1.5 tons pressure.The dry-pressing sheet is earlier 550 ℃ of binder removals (being incubated 4 hours), and (10 ℃ of rate of heating/min) also are incubated 2 hours, can obtain the good ceramic material of microcrystalline glass of dielectric properties, and are as shown in table 1 to be heated to 850 ℃ then rapidly.
The performance of sintered sample in each example of table 1
The sample shrinking percentage relative density K dielectric loss coefficient of expansion
(％) (％) (1MHz) (×10
-3，1MHz) (×10
-6，200℃)
NO1 18.5 97.3 4.97 1.15 4.7
NO2 18.3 98.2 5.12 1.78 4.45
NO3 18.5 97.6 5.46 2.01 6.88
NO4 18.6 97.1 5.33 2.32 6.33
Claims (2)
1, a kind of glass ceramics for HF chip inductor is characterized in that by CaO, B
2O
3, SiO
2, ZnO, P
2O
5Five kinds of one-tenth are grouped into, and the proportioning of each composition is:
CaO 25-60wt％ B
2O
3 10-50wt％ SiO
2?10-60wt％
ZnO 1-10wt％ P
2O
5 1-5wt％
2, a kind of preparation method of ceramic material of microcrystalline glass is characterized in that being made up of the following step:
(1) gets chemical pure CaO, B by the prescription scale
2O
3, SiO
2, ZnO, P
2O
5Ball milling 2-6 hour, mixed the back, drying;
(2) in alumina crucible, be incubated 2-4 hour down, make its complete fusion and homogenizing in 1300-1400 ℃;
(3) melts in the crucible is quenched obtained transparent glass cullet body into distilled water;
(4) gained glass cullet body obtains the glass powder that median size is 0.5-2.0 μ m through wet ball grinding, is ceramic material of microcrystalline glass of the present invention;
(5) with the ceramic material of microcrystalline glass powder that makes through insulation 1-4 hour under 750-850 ℃ of temperature after the moulding, promptly get devitrified glass ceramics.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021241317A CN1189410C (en) | 2002-07-12 | 2002-07-12 | Formula and prepn process of glass ceramics for HF chip inductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021241317A CN1189410C (en) | 2002-07-12 | 2002-07-12 | Formula and prepn process of glass ceramics for HF chip inductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1389415A true CN1389415A (en) | 2003-01-08 |
| CN1189410C CN1189410C (en) | 2005-02-16 |
Family
ID=4745341
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB021241317A Expired - Fee Related CN1189410C (en) | 2002-07-12 | 2002-07-12 | Formula and prepn process of glass ceramics for HF chip inductor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1189410C (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101200348B (en) * | 2007-12-21 | 2010-08-11 | 天津大学 | CaO-B2O3-SiO2 glass powder and preparation method |
| CN101033132B (en) * | 2007-02-13 | 2010-10-13 | 电子科技大学 | Middle-temperature sintering high temperature stabilization type ceramic capacitor dielectric material |
| CN102173586A (en) * | 2011-03-03 | 2011-09-07 | 电子科技大学 | Microcrystalline glass ceramic material, preparation method thereof and preparation method of high-temperature molten glass |
| CN102276151A (en) * | 2011-05-16 | 2011-12-14 | 周涛 | Technological method for preparing LTCC (low temperature co-fired ceramic) amorphous glass ceramic powder with microwave plasma torch |
| CN103395994A (en) * | 2013-07-29 | 2013-11-20 | 云南云天化股份有限公司 | Low-temperature co-fired ceramic material and preparation method thereof |
| CN104496442A (en) * | 2014-11-27 | 2015-04-08 | 中国计量学院 | Microwave dielectric ceramic powder with low dielectric constant, and preparation method thereof |
| CN105551712A (en) * | 2016-03-11 | 2016-05-04 | 深圳市固电电子有限公司 | Chip ceramic inductor and manufacturing method thereof |
| WO2018010633A1 (en) * | 2016-07-12 | 2018-01-18 | 深圳顺络电子股份有限公司 | Cbs-class ltcc material and manufacturing method thereof |
| US10160689B2 (en) | 2016-07-12 | 2018-12-25 | Shenzhen Sunlord Electronics Co., Ltd. | CBS-based LTCC material and preparation method thereof |
-
2002
- 2002-07-12 CN CNB021241317A patent/CN1189410C/en not_active Expired - Fee Related
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101033132B (en) * | 2007-02-13 | 2010-10-13 | 电子科技大学 | Middle-temperature sintering high temperature stabilization type ceramic capacitor dielectric material |
| CN101200348B (en) * | 2007-12-21 | 2010-08-11 | 天津大学 | CaO-B2O3-SiO2 glass powder and preparation method |
| CN102173586A (en) * | 2011-03-03 | 2011-09-07 | 电子科技大学 | Microcrystalline glass ceramic material, preparation method thereof and preparation method of high-temperature molten glass |
| CN102276151A (en) * | 2011-05-16 | 2011-12-14 | 周涛 | Technological method for preparing LTCC (low temperature co-fired ceramic) amorphous glass ceramic powder with microwave plasma torch |
| CN103395994A (en) * | 2013-07-29 | 2013-11-20 | 云南云天化股份有限公司 | Low-temperature co-fired ceramic material and preparation method thereof |
| CN103395994B (en) * | 2013-07-29 | 2015-11-25 | 云南云天化股份有限公司 | A kind of low-temperature co-burning ceramic material and preparation method thereof |
| CN104496442A (en) * | 2014-11-27 | 2015-04-08 | 中国计量学院 | Microwave dielectric ceramic powder with low dielectric constant, and preparation method thereof |
| CN105551712A (en) * | 2016-03-11 | 2016-05-04 | 深圳市固电电子有限公司 | Chip ceramic inductor and manufacturing method thereof |
| WO2018010633A1 (en) * | 2016-07-12 | 2018-01-18 | 深圳顺络电子股份有限公司 | Cbs-class ltcc material and manufacturing method thereof |
| US10160689B2 (en) | 2016-07-12 | 2018-12-25 | Shenzhen Sunlord Electronics Co., Ltd. | CBS-based LTCC material and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1189410C (en) | 2005-02-16 |
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