CN1379518A - Doping agent diffusion blocking of optoelectronic device realized by using InALAs or InGaALAS - Google Patents
Doping agent diffusion blocking of optoelectronic device realized by using InALAs or InGaALAS Download PDFInfo
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- CN1379518A CN1379518A CN 01117803 CN01117803A CN1379518A CN 1379518 A CN1379518 A CN 1379518A CN 01117803 CN01117803 CN 01117803 CN 01117803 A CN01117803 A CN 01117803A CN 1379518 A CN1379518 A CN 1379518A
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Abstract
This invention discloses a method used in diffusion of dopant atoms in active area and inter-diffusions of different types of dopant atoms among adjacent doped areas. This invented method uses multiple InAlAs or InGaAlAs layers to avoid the direct contact between dopant atoms and active area and the direct contact of dopant atoms in adjacent blocking structures of photo electronic device. This invention also discloses a semi-insulation embedded redge structure and a ridge structure in which the inter-diffusion of different kinds of dopant atoms are inhibited.
Description
The present invention relates to the method for opto-electronic devices such as a kind of manufacturing such as laser, modulator, image intensifer and wave detector, particularly relate to the dopant atom diffusion between a kind of different doped regions that are used to reduce this opto-electronic device and/or the method and the device of phase counterdiffusion.
The barrier layer is more and more important for opto-electronic device.For example, in the buried heterostructure of semiconductor laser diode, excellent characteristic has been brought on the barrier layer, such as low oscillation threshold and stable vibration transverse mode and high-quantum efficiency and high characteristic temperature.This be because, in the buried heterostructure laser diode, a current barrier layer can be formed on active layer both sides, active layer is to form between two coating with big energy gap and little refractive index.Like this, if can not prevent, the leakage current during work also can reduce widely.
The conventional method that a kind of manufacturing has a semiconductor laser diode of semi-insulating buried ridge is presented among Fig. 1-7 exemplaryly and is as described below.
With reference to Fig. 1, the processing step of making the laser diode that has buried ridge starts from forming a sandwich construction 100 on a n-InP (N type InP) substrate 10.Sandwich construction 100 is made up of one the one n-InP coating 12, active layer 14, the 2nd n-InP coating 16 and a quaternary material (Q) layer 18. Layer 12,14,16 and 18 is order formation and epitaxially grown continuously, thereby has finished first (inferior) crystal growth.Active layer 14 can be a Multiple Quantum Well (MQW) structure for example, it by unadulterated InGaAs/InGaAsP to constituting and forming by metallo-organic compound chemical vapor deposition (MOCVD) or metallo-organic compound vapor phase epitaxy (MOVPE) method.In addition, second coating 16 can be mixed with a kind of P type dopant, and prevailing is zinc (Zn).
Next step, as shown in Figure 2, a SiO
2Or Si
3N
4Mask 20 is formed in the upper surface of layer 18 with strip-like-shaped.Subsequently, sandwich construction 100 optionally is etched down to n-InP substrate 10, thereby produces a banded table top 50, as shown in Figure 3.The banded table top 50 that has mask 20 above is introduced in a growing system subsequently, such as a rheotaxial growth system, a MOCVD growing system, molecular beam epitaxy (MBE) growing system or a vapor phase epitaxy (VPE) growing system, so that form an InP current barrier layer 32 and a n-InP current barrier layer 34 in succession, as shown in Figure 4. Current barrier layer 32 and 34 is round banded table top 50 and form second (inferior) crystal growth.
First current barrier layer 32 can be mixed with foreign ion, such as iron (Fe), ruthenium (Ru) or titanium (Ti), to form semi-insulating (si) InP (Fe) barrier layer 32.Add the iron tramp ion and increased the resistivity of first current barrier layer 32 and reduced leakage current, leakage current usually occurs on the interface between the substrate 10 and first current barrier layer 32.Similarly, second current barrier layer 34 can be mixed with foreign ion, such as silicon (Si), sulphur (S) or tin (Sn), and the barrier layer 34 of mixing with the InP that forms a N type.
Referring now to Fig. 5, after removing mask 20, on the upper surface of second current barrier layer 34 and Q layer 18, carry out the 3rd (inferior) crystal growth.Thus, p-InP of further growth (P type InP) coating 42 (being also referred to as buried regions) and a p-InGaAsP or a p-InGaAs ohmic contact layer 44, thus formed a buried heterostructure.Coating 42 can also be mixed with the p type impurity ion, such as zinc (Zn), magnesium (Mg) or beryllium (Be), and the coating 42 that mixes with the InP that forms a P type.Because zinc is the most frequently used P type dopant, coating 42 just will be known as InP (Zn) doped layer.
The method of making said structure has three major defects, these shortcomings are all relevant with the phase counterdiffusion with the diffusion of dopant atom, particularly relevant with the phase counterdiffusion with the diffusion of zinc, because zinc is prevailing and widely used P type dopant in optoelectronics industry.
The first, the zinc diffusion occurs in the active area of semi-insulating buried ridge.Fig. 5 demonstrate zinc on the arrow A direction from of the diffusion of doped p-InP (Zn) second coating 16, because two layers directly contact to active layer 14.The high diffusivity of zinc has caused undesirable skew of emission wavelength, and this skew reaches several microns of zero points.The distortion of whole zinc distribution has further had influence on the electrical characteristics of opto-electronic device.Excessive zinc has also caused the change of various device properties bad in the active layer 14 of this device architecture, the extinction ratio and the junction capacitance of these characteristics such as electroabsorption modulator structure.
The second, the counterdiffusion of iron-zinc (Fe-Zn) phase occurs on the interface between doped p-InP (Zn) second coating 16 and semi-insulating InP (Fe) first current barrier layer 32.Fig. 5 demonstrate zinc on arrow B 1 direction from of the diffusion of p-InP (Zn) second coating 16 to InP (Fe) first current barrier layer 32.Similarly, arrow B 2 demonstrations of Fig. 5 are tapped a blast furnace from the diffusion of InP (Fe) first current barrier layer 32 to p-InP (Zn) second coating 16.
The 3rd, the counterdiffusion of iron-zinc (Fe-Zn) phase occurs in the barrier structure of Laser Devices, more particularly is on the interface that occurs between semi-insulating InP (Fe) first current barrier layer 32 and p-InP (Zn) coating 42.The reason that problem produces is: the InP current barrier layer 32 of the doping iron that is covered by mask 20 at first, taken place to contact with the InP coating 42 of doping zinc after mask 20 is removed.Contact area is expressed as region D for example in Fig. 5, it is positioned at the transverse sides of banded table top 50.Counterdiffusion mutually at region D place iron and zinc atom can increase leakage current significantly and reduce device performance, thereby causes low productivity ratio.In addition, if active layer 14 has a Multiple Quantum Well (MQW) structure, the zinc impurity in the InP of doping zinc coating 42 just can enter active layer 14, thereby has formed mixed crystal and in fact made quantum effect reduce to zero.
For the diffusion and counterdiffusion mutually that suppresses the zinc doping atom, in the IC manufacturing process, introduced multiple different technology.For example, a kind of prior art has as shown in Figure 6 been considered to introduce the zinc doping braking measure in device architecture, such as a unadulterated InP layer 52.Unadulterated InP layer 52 after active layer 14 growth but before 16 growths of p-InP second coating, grow, thereby prevented direct contact between zinc and the active area.Substitute unadulterated InP layer 52, n-InP (Si) layer that also can adopt a doped silicon is as the dopant braking measure.
Although above-mentioned technology is preventing aspect the zinc diffusion good result is arranged, its procedure of processing needs extremely sensitive parameter, such as the coating of doping zinc and the doped level and the thickness of contact layer.In addition, also must very critically design, so that be best for every kind of device architecture and every kind of reactor braking measure such as growth conditionss such as growth rate and temperature.In addition, this method does not allow to control final zinc distribution.At last, selected during as the dopant braking measure when the n-InP of doped silicon (Si) layer, the N type dopant silicon of being introduced has just formed an extra unwanted p-n junction in the p-of device side.
The prior art that another kind is used for reducing zinc-iron phase counterdiffusion is presented at Fig. 7 for example.This technology is desirably between the InP coating 42 of InP (Fe) current barrier layer 32 of doping iron and doping zinc and inserts an intrinsic or unadulterated InP layer 70, prevents contact between InP (Fe) layer and InP (Zn) layer and elimination iron-zinc counterdiffusion and the leakage current that causes mutually.Yet a major defect of this technology is that it has influenced p-n junction between n-InP second current barrier layer 34 and the p-InP coating (buried regions) 42.More particularly, the adding of eigen I nP layer has changed should be at the p-n junction in the active area of Laser Devices, and replaces it and produced a p-i-n knot that changes device property fully.In addition, this method is not enough to prevent fully the iron-zinc phase counterdiffusion in the device active region near zone.
Correspondingly, need a kind of method that is formed for the banded table top of opto-electronic device, this method implementation cost is not high and can reduce the counterdiffusion mutually of leakage current and dopant atom.Also need a kind of opto-electronic semiconductor module, it has the good operation characteristic, comprises having reduced the foreign atom diffusion, reduced leakage current and having improved accuracy and functional reliability.
The invention provides a kind of method, be used to reduce the diffusion and/or the phase counterdiffusion of the dopant atom between the different doped regions of semi-insulating buried ridge structure of positive bias device (such as laser and image intensifer) and reverse bias device (such as electroabsorption modulator and wave detector).
In the first embodiment of the present invention, an InAlAs (arsenic aluminium indium) or an InGaAlAs (arsenic gallium aluminium indium) layer growth and are growths before the growth of the coating of doping zinc and contact layer subsequently on active area.Stop that by inserting a thin InAlAs or InGaAlAs layer zinc is diffused into active layer, allow accurately to arrange that the p-i knot (less than 100 dusts) and the dopant of minimum enter active area.
In the second embodiment of the present invention, an InAlAs or an InGaAlAs layer at first optionally are grown in above the active area also around mesa structure, be only conventional InP and n-InP current barrier layer subsequently and be grown on InAlAs or the InGaAlAs layer, they form second crystal growth around table top.Like this, the phase counterdiffusion between the zinc atom in iron atom in InP (Fe) current barrier layer and p-InP (Zn) second coating just has been suppressed, because do not have contact between these two doped regions.
In the third embodiment of the present invention, a plurality of InAlAs and/or InGaAlAs layer growth are on active area and around mesa structure, and routine second current barrier layer of alternative second crystal growth.
The similar of fourth embodiment of the invention and the 3rd embodiment.Yet in the 4th embodiment, InP (Fe) current barrier layer is to grow between two adjacent InAlAs and/or InGaAlAs layer, and InP (Fe) layer just has contacting of minimum with mask above being positioned at banded table top like this.
According to the of the present invention the 5th and the 6th embodiment, a plurality of InAlAs and/or InGaAlAs layer growth are on active area and center on mesa structure, and are between the barrier layer that forms second crystal growth.In the 5th embodiment, InAlAs and/or InGaAlAs layer be after two current barrier layers form, grow and as the part of second crystal growth.On the contrary, in the 6th embodiment, InAlAs and/or InGaAlAs layer are to grow as the part of the 3rd crystal growth and before the top coating forms.In any situation, these a plurality of InAlAs and/or InGaAlAs layer all suppress the phase counterdiffusion between the zinc atom in p-InP (Zn) coating of iron atom in InP (Fe) current barrier layer and the 3rd crystal growth.A plurality of InAlAs and/or InGaAlAs layer can be introduced the performance of optimizing opto-electronic device in barrier structure and/or the coat structure.
From the DETAILED DESCRIPTION OF THE PREFERRED of being done in conjunction with the accompanying drawings, can understand above-mentioned and other advantage of the present invention better.
Fig. 1 is the profile of a buried heterostructure laser diode, and this laser diode is to make according to a kind of method of prior art, and shown in this figure is a middle process step.
Fig. 2 is the profile of the buried heterostructure laser diode of Fig. 1, and this laser diode is to make according to a kind of method of prior art, and shown in this figure is a processing step after Fig. 1.
Fig. 3 is the profile of the buried heterostructure laser diode of Fig. 1, and shown is Fig. 2 processing step afterwards.
Fig. 4 is the profile of the buried heterostructure laser diode of Fig. 1, and shown is Fig. 3 processing step afterwards.
Fig. 5 is the profile of the buried heterostructure laser diode of Fig. 1, and shown is Fig. 4 processing step afterwards.
Fig. 6 is a kind of profile of improved form of the buried heterostructure laser diode of Fig. 1, and demonstrates a not doping InP layer on the active area that is grown in this laser diode.
Fig. 7 is the profile of the buried heterostructure laser diode of Fig. 1, and shown is Fig. 5 processing step afterwards, and demonstrates an eigen I nP layer.
Fig. 8 is the profile of a buried heterostructure laser diode, and this laser diode is made according to the first embodiment of the present invention, and shown in this figure is a middle process step.
Fig. 9 is the profile of the buried heterostructure laser diode of Fig. 8, and shown is Fig. 8 processing step afterwards.
Figure 10 is the profile of the buried heterostructure laser diode of Fig. 8, and shown is Fig. 9 processing step afterwards.
Figure 11 is the profile of the buried heterostructure laser diode of Fig. 8, and shown is Figure 10 processing step afterwards.
Figure 12 is the profile of the buried heterostructure laser diode of Fig. 8, and shown is Figure 11 processing step afterwards.
Figure 13 is the profile of the buried heterostructure laser diode of Fig. 8, and shown is Figure 12 processing step afterwards.
Figure 14 is the profile of a buried heterostructure laser diode, and this laser diode is made according to a second embodiment of the present invention, and shown in this figure is a middle process step.
Figure 15 is the profile of the buried heterostructure laser diode of Figure 14, and shown is Figure 14 processing step afterwards.
Figure 16 is the profile of the buried heterostructure laser diode of Figure 14, and shown is Figure 15 processing step afterwards.
Figure 17 is the profile of the buried heterostructure laser diode of Figure 14, and shown is Figure 16 processing step afterwards.
Figure 18 is the profile of the buried heterostructure laser diode of Figure 17, but comprises an InAlAs or InGaAlAs layer on the active area of this buried heterostructure laser diode.
Figure 19 is the profile of a buried heterostructure laser diode, and this laser diode is an a third embodiment in accordance with the invention manufacturing, and shown in this figure is a middle process step.
Figure 20 is the profile of a buried heterostructure laser diode, and this laser diode is an a fourth embodiment in accordance with the invention manufacturing, and shown in this figure is a middle process step.
Figure 21 is the profile of the buried heterostructure laser diode of Figure 20, and shown in this figure is Figure 20 processing step afterwards.
Figure 22 is the profile of a buried heterostructure laser diode, and this laser diode is made according to a fifth embodiment of the invention, and shown in this figure is a middle process step.
Figure 23 is the profile of the buried heterostructure laser diode of Figure 22, and shown in this figure is Figure 22 processing step afterwards.
Figure 24 is the profile of a buried heterostructure laser diode, and this laser diode is made according to a sixth embodiment of the invention, and shown in this figure is a middle process step.
Figure 25 is the profile of an alternative embodiment of the invention, and it demonstrates the ridge structure of an opto-electronic device, and shown in this figure is a middle process step.
In the detailed description below, with reference to implementing various specific embodiment of the present invention.These embodiment are described with sufficient details, make those of ordinary skill in the art can implement the present invention, and be appreciated that also and can use other embodiment, and can carry out without departing from the invention structure and electric aspect change.Therefore, following detailed description should not be considered to be restrictive, and scope of the present invention is limited by claims.
The invention provides a kind of method, be used for reducing the diffusion of dopant atom, and be used to reduce the phase counterdiffusion of dissimilar dopant atoms between the adjacent doped region of the ridge structure of the semi-insulating buried ridge structure of Laser Devices or image intensifer and electroabsorption modulator or wave detector at active area.Method of the present invention has used a plurality of InAlAs and/or InGaAlAs layer to avoid direct contact between the dopant atom in the adjacent barrier structure of direct contact between dopant atom and the active area and opto-electronic device.
Term " P type dopant " used in the following description can comprise any p type impurity ion, such as zinc (Zn), magnesium (Mg) or beryllium (Be) are wherein arranged.Because zinc is the most frequently used P type dopant, so related P type dopant is the zinc doping agent among the application.Although the present invention illustrates with reference to the zinc doping agent, can expect that a plurality of InAlAs of the present invention and/or InGaAlAs layer will play the effect that stops other P type dopant equally.
Similarly, below the term " N type dopant " that uses in the explanation can comprise any N type foreign ion, such as silicon (Si), sulphur (S) or tin (Sn) are wherein arranged.Although N type dopant related among the application is a silicon dopant, although and the present invention illustrate with reference to silicon dopant, can expect that a plurality of InAlAs of the present invention and/or InGaAlAs layer will play the effect that stops other N type dopant equally.
Used in the following description term " semi-insulating type impurity " can comprise the foreign ion on the semi-insulating barrier layer of any formation, such as iron (Fe), ruthenium (Ru) or titanium (Ti).Because iron is the most frequently used semi-insulating type impurity, so related semi-insulating type impurity is the iron dopant among the application.Equally, although the present invention describes with reference to iron, can expect that a plurality of InAlAs of the present invention and/or InGaAlAs layer will play the effect that stops other semi-insulating type dopant equally.Therefore, following detailed description must not be used as restrictive, and scope of the present invention will be limited by claims.
Referring now to accompanying drawing, wherein components identical is represented with identical reference number, Fig. 8-13 demonstrates the manufacture method of first embodiment of buried semi-insulating ridge heterostructure of the present invention (buried semi-insulating ridge heterostructure) 201 (Figure 13), and wherein zinc has been suppressed to being diffused into of active area of opto-electronic device.
At first, as shown in Figure 8, preferably have as primary flat＜a n-InP substrate 110 of 100〉plane on, preferably first coating 112 of epitaxial growth n-InP and an active layer 114 continuously, active layer 114 has the quantum well structure of InGaAsP.It must be noted that although metallo-organic compound vapor phase epitaxy (MOVPE) method is preferred, method also can be used liquid phase epitaxy (LPE) method, vapor phase epitaxy (VPE) method or molecular beam epitaxy (MBE) method as an alternative.As known in the prior art, active layer 114 should be able to absorb, launch, amplify or modulate light, and this depends on the particular type of opto-electronic device.In addition, although the present invention should be mentioned that an exemplary N type substrate, working lining (operative layers) forms a NP knot around an active area thereon, but be to be understood that, the present invention has also considered (use) P type substrate, forms a corresponding PN junction around an active area thereon.
In addition, although describe embodiments of the invention with reference to the InAlAs layer below, this InAlAs layer is used to stop the diffusion and/or the phase counterdiffusion of dissimilar dopant impurities, but it must be understood that, same process conditions and process also are applicable to the InGaAlAs layer as diffusion impervious layer.Therefore, the present invention is not limited to use the InAlAs layer as the doping agent diffusion blocking layer, and the present invention is suitable for using the InGaAlAs layer as the doping agent diffusion blocking layer equally, perhaps uses the combination of InAlAs layer and InGaAlAs layer.
As following shown in Fig. 9, InAlAs layer 115 be formed on active layer 114 above.For example, InAlAs layer 115 can be epitaxially grown by MOVPE or LPE method, and its thickness arrives between about 800 dusts at about 300 dusts.Although these embodiment of the present invention describe with reference to InAlAs that forms and/or InGaAlAs layer 115, it must be understood that active area also can be at least one side and dopant blocking layer adjacency on active area (layer) 114.Term in the present specification " adjacency " (bounded) is meant that the dopant blocking floor contacts with active area or separates by another district or floor and active area.Under any circumstance, InAlAs layer 115 all serves as a zinc diffusion impervious layer, stops that zinc atom each layer above growth subsequently is diffused into the active layer 114.
Introduce a thin InAlAs layer extra advantage is provided.That is, the InAlAs layer bring excessive potential barrier can not for majority carrier or hole, because the InAlAs layer has formed II type heterojunction with adjacent layer, adjacent layer is exactly active layer (for example active layer 114 of Figure 10) and coating (for example coating 116 of Figure 10).The InAlAs layer has a band gap (E=1.44eV), and the band gap that it is higher than the band gap (E=0.8eV) of active area and is higher than adjacent coatings is (for example, for InP coating 116, E=1.35eV).Because these difference are between coating and active area, because this arrangement mode of band gap does not just have charge carrier to produce.
Next step after InAlAs layer 115 forms, according to the step of reference Fig. 1-5 description and according to prior art, is used to form the processing step of the semi-insulating buried ridge of a laser diode.Therefore, preferred one second coating 116 of epitaxial growth and a Q layer 118, as shown in figure 10, preferably the mix p-InP of zinc of second coating 116.Use one deck silica or silicon nitride mask 200 (Figure 10), the sandwich construction of Figure 10 is etched down into n-InP substrate 110, thereby has formed a shaped like narrow ridge structure or a banded table top 150 (Figure 11) on substrate 110.Etching can be by using for example conventional bromo-methanol solvate or comprising oxygenated water and the solvent of the mixture of hydrochloric acid is carried out.
With structural similarity shown in Figure 3, the banded ridge structure 150 of Figure 11 comprises the part of second coating 116 of part, p-InP (Zn) on part, the InAlAs zinc barrier layer 115 of part, the active layer 114 of first coating 112 of n-InP and the part of Q layer 118.As shown in figure 11, banded ridge structure 150 is on the upper surface of n-InP substrate 110.
After this, there is the banded ridge structure 150 of mask 200 to be introduced in a rheotaxial growth system or the MOCVD growing system, above to form one the one InP current barrier layer 132 and a n-InP current barrier layer 134 preferablyly, as shown in figure 12.Preferably, current barrier layer 132 and 134 is optionally grown around banded ridge structure 150 by metallo-organic compound vapor phase epitaxy (MOVPE) method.Current barrier layer 132 preferred a kind of semi-insulating type dopants that mix, such as iron (Fe), ruthenium (Ru) or titanium (Ti), doping content is 1 * 10
18Cm
-3To 3 * 10
18Cm
-3In the scope, the current barrier layer that semi-insulating to obtain (si) InP mixes here is the first semi-insulating current barrier layer InP (Fe) 132 (Figure 12).Similarly, second current barrier layer 134 can be mixed with foreign ion, such as silicon (Si), sulphur (S) or tin (Sn), and the barrier layer 134 of mixing with the InP that forms a N type.
Referring now to Figure 13, after removing mask 200 and selectively removing Q layer 118, on the upper surface of second current barrier layer 134 and Q layer 118, carry out the 3rd (inferior) crystal growth.Comprise Q layer 118 in the mesa structure although embodiments of the invention are described as, it must be understood that the present invention has considered the opto-electronic device that does not comprise Q layer (such as Q layer 118 (Figure 10-24)) equally.In addition,, embodiments of the invention have first and second current barrier layers, such as current barrier layer 132 and 134 (Figure 12-13 although being described as; Figure 16-18; Figure 22-24), but it must be understood that the present invention has considered to have the opto-electronic device of more than two current barrier layer as the part of second crystal growth equally, for example have the opto-electronic device of four current barrier layers of doping (agent) conductivity alternately.
As the part of the 3rd crystal growth, a preferred p-InP coating 142 of further growth (Figure 13) and p-InGaAsP or a p-NGaAs ohmic contact layer 144 (Figure 13), thus form a buried heterostructure.Coating 142 (Figure 13) preferred liquid phase epitaxial growth or MOCVD grow into 1.5 to 3 microns thickness, and preferably 2.5 microns, and a kind of p type impurity atom that mixes, such as zinc (Zn), magnesium (Mg) or beryllium (Be).For example, can pass through diethyl zinc (DEZ), with H2 as carrier gas and from approximately-15 ℃ under the temperature of 40 ℃ of variations, mixing.Similarly, ohmic contact layer 144 can be the InGaAs epitaxially grown layer of a for example zinc doping, and thickness is about 3000 dusts.
A N type electrode 162 (Figure 13) is formed on the lower surface of substrate 110, a P type electrode 164 (Figure 13) is formed on the upper surface of ohmic contact layer 144, to provide a voltage to buried semi-insulating ridge heterostructure 201, heterostructure 201 has an InAlAs layer 115, is used for stopping that zinc is diffused into the active area 114 of heterostructure.
In the second embodiment of the present invention (Figure 14-18), before the current barrier layer that constitutes second crystal growth forms, the InAlAs layer of optionally growing.For describing second embodiment, referring now to Figure 14, this figure demonstrates a banded ridge structure (banded table top) 151, and the banded ridge structure 150 of it and Figure 11 is similar, but does not have InAlAs layer 115.Therefore, banded ridge structure 151 comprises the part of a n-InP coating 112, the part of active layer 114, the part of the 2nd p-InP (Zn) coating 116 and the part of Q layer 118.As shown in figure 14, banded ridge structure 151 is on the upper surface of n-InP substrate 110.
Referring now to Figure 15, the banded table top 151 of Figure 14 is introduced in a rheotaxial growth system or the MOCVD growing system subsequently, to form an InAlAs layer 131.Preferably, InAlAs layer 131 is optionally to grow around the part of banded ridge structure 151 and n-InP substrate 110 by metallo-organic compound vapor phase epitaxy (MOVPE) method.InAlAs layer 131 can be epitaxially grown to about 300 dusts to the thickness between about 3000 dusts, and this thickness is enough to make InAlAs layer 131 to suppress the horizontal phase counterdiffusion of zinc-iron between the current barrier layer of growth subsequently.
Subsequently around banded ridge structure 151 and on InAlAs layer 131 first current barrier layer 132 (Figure 16) of epitaxial growth InP.Described as top reference first embodiment, first current barrier layer 132 (Figure 12-13; Figure 16) be doped with a kind of semi-insulating type dopant, such as iron (Fe), doping content is 1 * 10
18CM
-3To 3 * 10
18CM
-3In the scope, to form semi-insulating InP (Fe) first current barrier layer 132.
Between first current barrier layer 132 of banded table top 151 and InP (Fe), insert InAlAs layer 131, the direct contact between second coating 116 that has prevented the p-InP (Zn) on active area 114 and semi-insulating InP (Fe) first current barrier layer 132.Like this, the horizontal phase counterdiffusion of iron-zinc that typically occurs in the opto-electronic device just has been suppressed, because not contact between two doped regions of device.
In this moment of manufacturing process, carry out step subsequently according to the technology described in first embodiment and with reference to Figure 12-13.Therefore, in case second current barrier layer 134 (Figure 16) of grown InP (Si) and removed mask 200, just a p-InP coating 142 of epitaxial growth (Figure 17) on second current barrier layer 134 and above the Q layer 118.Class is with ground, further p-InGaAsP of growth or p-InGaAs ohmic contact layer 144 on p-InP coating 142.At last, form the electrode 162 of a N type and the electrode 164 (Figure 17) of a P type respectively at the lower surface of substrate 110 and the upper surface of ohmic contact layer 144, thereby form a complete buried semi-insulating ridge heterostructure 202 (Figure 17).
Although second embodiment is illustrated with reference to banded table top 151 (Figure 14-17), this band shape table top 151 do not comprise an InAlAs layer (such as, be positioned at InAlAs layer 115 above the active area 114 among Fig. 9-13) or an InGaAlAs layer, but it must be understood that the banded table top of opto-electronic device also can comprise this additional InAlAs or the InGaAlAs layer that is positioned at above the active area.Such example is presented among Figure 18, wherein active area 114 and two InAlAs layer 131,115 adjacency.Like this, phase counterdiffusion that iron-zinc is horizontal and zinc drop to minimum level to the diffusion of active area, and the characteristic of opto-electronic device reaches best.
In the third embodiment of the present invention, a plurality of InAlAs layers of growing around mesa structure and between the different blocking layer that forms second crystal growth, and the InAlAs layer of optionally on the active area of mesa structure, growing.This embodiment is presented among Figure 19.A buried heterostructure laser diode 203 according to the third embodiment of the invention manufacturing comprises at least three InAlAs layers 115,131 and 133.InAlAs layer 115,131 be formed on the front with reference to the present invention first and second embodiment (Fig. 8-13; Figure 14-18) discusses, just no longer illustrated at this.This embodiment is characterised in that InAlAs layer 133, and it optionally is grown in above semi-insulating InP (Fe) first current barrier layer 132 (Figure 19) and substitutes second current barrier layer 134 (Figure 17-18) of conventional n-InP (Si).Insert any leakage current that an extra InAlAs layer has further reduced horizontal iron-zinc phase counterdiffusion and reduced to exist in the device as current barrier layer.
Figure 20-21 demonstrates the fourth embodiment of the present invention, and wherein zinc-iron phase the counterdiffusion between InP (Fe) first current barrier layer 132 (Figure 19) and p-InP (Zn) coating 142 (Figure 19) has been eliminated fully.In this embodiment and as shown in figure 20, after epitaxial growth InAlAs layer 131, on InAlAs layer 131, form a selective growth layer 136 of InP (Fe) first current barrier layer.The growth of this InP (Fe) first current barrier layer 136 is for it is minimized with contacting of mask 200, for example, as shown in figure 20, is a some C of the every side of banded table top.Certainly, some C is the part by InP (Fe) first current barrier layer 136 and mask 200 formed contact wire (not shown)s.Next step, growth InAlAs layer 133 (Figure 20), it replaces conventional n-InP (Si) second current barrier layer 134 (Figure 17-18).
After having removed mask 200, carry out subsequently step according to the technology described in first embodiment and with reference to Figure 13.Therefore, further growth a p-InP (Zn) coating 142 and a p-InGaAsP or a p-InGaAs ohmic contact layer 144.Because grown InP (Fe) first current barrier layer 136 optionally, the contact zone D (Fig. 5) that is positioned at banded table top transverse sides has just been eliminated fully.Correspondingly, between InP (Fe) first current barrier layer 136 and p-InP (Zn) coating 142, the counterdiffusion mutually of iron and zinc atom just has been eliminated.In addition, the insertion of three InAlAs layers 115,131 and 133 (wherein two is the every side that is arranged in banded table top 151) has suppressed any iron-zinc counterdiffusion mutually that device may exist, thereby has guaranteed normal function.
Along with on the upper surface of the lower surface of substrate 110 and ohmic contact layer 144, forming a N type electrode 162 and a P type electrode 164 (Figure 21), the structure of Figure 21 has just further been finished, so just formed a buried semi-insulating ridge heterostructure 204, as shown in figure 21.
Figure 22-23 demonstrates the fifth embodiment of the present invention.In this embodiment, after InP (Fe) first current barrier layer 132 and n-InP (Si) second current barrier layer 134, the additional InAlAs layer 133 of optionally growing, but it is still the part of second crystal growth.Therefore, InAlAs layer 133 (Figure 22) growth before mask 200 is removed.Removing mask 200 (Figure 23) afterwards, growth p-InP (Zn) coating 142 and ohmic contact layer 144 form N type electrode 162 and P type electrode 164 subsequently, thereby have finished a buried semi-insulating ridge heterostructure 205 (Figure 23).
In the sixth embodiment of the present invention, as shown in figure 24, the growth of additional InAlAs layer 133 is the parts as the 3rd crystal growth, rather than resembling among the 5th embodiment as the part of second crystal growth.That is, in the buried semi-insulating ridge heterostructure 206 of Figure 24, InAlAs layer 133 is grown after mask 200 is removed and before 142 growths of p-InP (Zn) coating.As shown in figure 24, InAlAs layer 133 is grown on banded table top 151 and Q layer 118.InAlAs layer 115 and 133 all suppresses zinc atom and is diffused into active area 114 and zinc diffuses laterally into InP (Fe) first current barrier layer 132 from banded table top from p-InP (Zn) second coating 116.Similarly, InAlAs layer 133 has further suppressed zinc and iron in current barrier layer, i.e. phase counterdiffusion between the InP of buried semi-insulating ridge heterostructure 206 (Fe) first current barrier layer 132 and p-InP (Zn) coating 142.
Arrive this, the present invention has described buried semi-insulating ridge heterostructure, such as, the buried semi-insulating ridge heterostructure 204 of Figure 21.Yet the present invention has wider applicability, and for example can be used to the manufacturing of the ridge structure of the opto-electronic device such as electroabsorption modulator and wave detector.In this case, as shown in figure 25, a ridge structure 209 that is positioned on the upper surface of a n-InP substrate 110 comprises a vertical banded table top 210, and it is insulated 211 encirclement of layer.Vertical banded table top 210 also comprises part, the part of p-InP (Zn) second coating 116, the part of p-InP coating 142 and the part of p-InGaAsP or p-InGaAs ohmic contact layer 144 of part, InAlAs or InGaAlAs layer 115 of part, the active layer 114 of first coating 112.Preferably, all above-mentioned layers all pass through metallo-organic compound vapor phase epitaxy (MOVPE) method and optionally grow.But, method also can adopt liquid phase epitaxy (LPE), vapor phase epitaxy (VPE) or molecular beam epitaxy (MBE) method as an alternative.Insulating barrier 211 is preferably formed by polyimides by deposition process.
The invention provides a kind of method, be used to reduce the diffusion and the zinc-iron phase counterdiffusion of the zinc between the doped region of Laser Devices, image intensifer, modulator or wave detector.Direct contact between zinc doping layer and the iron doped layer is prevented from, and the phase counterdiffusion of dopant atom is suppressed.
Although the present invention has described on N type substrate and made opto-electronic device, the present invention is suitable for making (opto-electronic device) on P type or semi-insulating type substrate equally as known in the prior art.Certainly, this can change the doping or the electrical conductance of the working lining in the manufacturing device.In addition, although the present invention is described with reference to InAlAs dopant blocking layer in an exemplary embodiment, the present invention is equally applicable to use the opto-electronic device of the combination of InGaAlAs dopant blocking layer or InAlAs and InGaAlAs layer, as mentioned above.
More than explanation has described to realize the preferred embodiment of feature and advantage of the present invention.The present invention does not really want to be confined to the embodiment that described.Under the premise without departing from the spirit and scope of the present invention, can change and replace concrete process conditions and structure.
For example, although all embodiment of the present invention comprise InAlAs or the InGaAlAs layer 115 (Fig. 9-13 that is positioned at above the opto-electronic device active area; Figure 18-25), but it must be understood that the existence of this layer is optionally in second to the 6th embodiment, this depends on Devices Characteristics and requirement.Similarly, as mentioned above, embodiments of the invention can comprise the additional InAlAs and/or the InGaAlAs layer of any amount between coating that is mixed with foreign atom and barrier layer.For example, InAlAs and/or InGaAlAs layer can form between the coating of the 3rd crystal growth and ohmic contact layer.Therefore, the present invention should not be regarded as being limited by above-mentioned explanation and accompanying drawing, but is only limited by the scope of claims.
Claims (104)
1. an opto-electronic device comprises: the substrate of one first conduction type; With
A mesa structure, it is located on the described substrate, described mesa structure has at least both sides and comprises an active area, described active area is also at least in a side and a dopant blocking layer adjacency, and described dopant blocking layer comprises a kind of material of selecting from the material group of InAlAs and InGaAlAs composition.
2. according to the opto-electronic device of claim 1, also comprise: first current barrier layer, it is positioned at the both sides of described mesa structure; Second current barrier layer of first conduction type, it is formed on described first current barrier layer; And the coating of one second conduction type, it is formed on described mesa structure and described second current barrier layer.
3. according to the opto-electronic device of claim 1, also be included in a plurality of current barrier layers that form on described second current barrier layer.
4. according to the opto-electronic device of claim 1, wherein, described dopant blocking layer is positioned at above the described active area.
5. according to the opto-electronic device of claim 1, also comprise second coating of the doping of one second conduction type, it contacts with described dopant blocking layer.
6. according to the opto-electronic device of claim 1, wherein, described dopant blocking layer is between each side and described first current barrier layer of the described both sides of described mesa structure.
7. according to the opto-electronic device of claim 1, wherein, second coating of described doping is mixed with a kind of P type dopant.
8. according to the opto-electronic device of claim 1, wherein, described dopant blocking layer is an epitaxially grown layer.
9. according to the opto-electronic device of claim 1, wherein, the thickness of described dopant blocking layer at about 300 dusts in 800 dust scopes.
10. according to the opto-electronic device of claim 1, wherein, described active area comprises a layer that energy is luminous.
11. according to the opto-electronic device of claim 1, wherein, described active area comprises a light absorbing layer of energy.
12. according to the opto-electronic device of claim 1, wherein, described active area comprises the layer of an energy light modulated.
13. according to the opto-electronic device of claim 1, wherein, described active area comprises a layer that can amplify light.
14. according to the opto-electronic device of claim 1, wherein, described dopant blocking layer comprises at least one InAlAs layer.
15. according to the opto-electronic device of claim 1, wherein, described dopant blocking layer comprises at least one InGaAlAs layer.
16. according to the opto-electronic device of claim 1, wherein, described dopant blocking layer comprises at least one InAlAs layer and at least one InGaAlAs layer.
17. a semiconductor optical device comprises:
The substrate of one first conduction type; With
Be located at a mesa structure on the described substrate, described mesa structure has at least both sides and comprises a dopant blocking layer, described dopant blocking layer comprises a kind of material of selecting from the material group that InAlAs and InGaAlAs form, described dopant blocking layer also is formed between second coating of doping of an active area and one second conduction type.
18. the semiconductor optical device according to claim 17 also comprises: first current barrier layer, it is positioned at the both sides of described mesa structure; Second current barrier layer of first conduction type, it is formed on described first current barrier layer; And the coating of one second conduction type, it is formed on described mesa structure and described second current barrier layer.
19., also be included in a plurality of current barrier layers that form on described second current barrier layer according to the semiconductor optical device of claim 18.
20. according to the semiconductor optical device of claim 17, wherein, second coating of described doping is mixed with a kind of dopant of selecting from the material group that zinc, beryllium and magnesium are formed.
21. according to the semiconductor optical device of claim 17, wherein, described dopant blocking layer is an epitaxially grown layer.
22. according to the semiconductor optical device of claim 17, wherein, the thickness of described dopant blocking layer at about 300 dusts in 800 dust scopes.
23. according to the semiconductor optical device of claim 17, wherein, described active area comprises a layer that energy is luminous.
24. according to the semiconductor optical device of claim 17, wherein, described active area comprises a light absorbing layer of energy.
25. according to the semiconductor optical device of claim 17, wherein, described active area comprises the layer of an energy light modulated.
26. according to the semiconductor optical device of claim 17, wherein, described active area comprises a layer that can amplify light.
27. according to the semiconductor optical device of claim 17, wherein, described dopant blocking layer comprises at least one InAlAs layer.
28. according to the semiconductor optical device of claim 17, wherein, described dopant blocking layer comprises at least one InGaAlAs layer.
29. according to the semiconductor optical device of claim 17, wherein, described dopant blocking layer comprises at least one InAlAs layer and at least one InGaAlAs layer.
30. a method that forms semiconductor laser may further comprise the steps:
On the substrate of first conduction type, form a plurality of laminations, in the described layer at least one is active area, in the described layer another is the dopant blocking layer at least, described dopant blocking layer comprises a kind of material of selecting from the material group that InAlAs and InGaAlAs form; With
Described a plurality of laminations of etching and described substrate are to form a mesa structure on described substrate.
31. method according to claim 30, further comprising the steps of: as to form first current barrier layer in the both sides of described mesa structure, on described first current barrier layer, form second current barrier layer of first conduction type, and the coating that on described mesa structure and described second current barrier layer, forms one second conduction type.
32. according to the method for claim 30, wherein, described first conduction type is the N type, described second conduction type is the P type.
33. according to the method for claim 30, wherein, described first conduction type is the P type, described second conduction type is the N type.
34. according to the method for claim 30, further comprising the steps of: the described both sides at described mesa structure form a plurality of current barrier layers.
35. according to the method for claim 30, wherein, described dopant blocking layer suppresses dopant from the diffusion of one second coating to described active area, described second coating forms on described dopant blocking layer and is in contact with it.
36. according to the method for claim 35, wherein, described second coating is optionally grown by metallo-organic compound vapor phase epitaxy method.
37. according to the method for claim 35, wherein, described second coating is second conduction type.
38. it is, further comprising the steps of: that described second coating is mixed according to the method for claim 35.
39. according to the method for claim 30, wherein, described dopant blocking layer is epitaxially grown.
40. according to the method for claim 30, wherein, described dopant blocking layer is optionally grown by metallo-organic compound vapor phase epitaxy method.
41. according to the method for claim 30, wherein, the thickness of described dopant blocking layer growth to about 300 dusts to 800 dusts.
42. according to the method for claim 30, wherein, described active area comprise one can be luminous when being excited layer.
43. according to the method for claim 30, wherein, described active area comprises a light absorbing layer of energy.
44. according to the method for claim 30, wherein, described active area comprises the layer of an energy light modulated.
45. according to the method for claim 30, wherein, described active area comprises a layer that can amplify light.
46. according to the opto-electronic device of claim 30, wherein, described dopant blocking layer comprises at least one InAlAs layer.
47. according to the opto-electronic device of claim 30, wherein, described dopant blocking layer comprises at least one InGaAlAs layer.
48. according to the opto-electronic device of claim 30, wherein, described dopant blocking layer comprises at least one InAlAs layer and at least one InGaAlAs layer.
49. a semiconductor optical device comprises:
The substrate of one first conduction type;
Be located at a mesa structure on the described substrate, described mesa structure has both sides and comprises an active area; With
One first dopant blocking layer, it is positioned at the both sides of described mesa structure, and described dopant blocking layer comprises a kind of material of selecting from the material group of InAlAs and InGaAlAs composition.
50., also be included in a plurality of current barrier layers that form on described second current barrier layer according to the semiconductor optical device of claim 49.
51. according to the semiconductor optical device of claim 49, wherein, the described first dopant blocking layer comprises at least one InAlAs layer.
52. according to the semiconductor optical device of claim 49, wherein, the described first dopant blocking layer comprises at least one InGaAlAs layer.
53. according to the semiconductor optical device of claim 49, wherein, the described first dopant blocking layer is an epitaxially grown layer.
54. according to the semiconductor optical device of claim 49, wherein, the thickness of the described first dopant blocking layer at about 300 dusts in 800 dust scopes.
55. the semiconductor optical device according to claim 49 also comprises: first current barrier layer, it is formed on the described first dopant blocking layer; Second current barrier layer of first conduction type, it is formed on described first current barrier layer; And the coating of one second conduction type, it is formed on described mesa structure and described second current barrier layer.
56. according to the semiconductor optical device of claim 55, wherein, described first current barrier layer mixes.
57. according to the semiconductor optical device of claim 56, wherein, described dopant is a kind of semi-insulating type dopant.
58. according to the semiconductor optical device of claim 57, wherein, described first current barrier layer is an InP (Fe) layer.
59. according to the semiconductor optical device of claim 55, wherein, described second current barrier layer is doped with a kind of dopant, this dopant is to select from the material group that silicon, sulphur and tin are formed.
60. according to the semiconductor optical device of claim 55, wherein, described mesa structure also is included in one second coating that forms on the described active area.
61. according to the semiconductor optical device of claim 55, wherein, described mesa structure also is included in one the second dopant blocking layer that forms between described second coating and the described active area.
62. according to the semiconductor optical device of claim 61, wherein, the described second dopant blocking layer comprises a kind of material of selecting from the material group of InAlAs and InGaAlAs composition.
63. according to the semiconductor optical device of claim 61, wherein, the described second dopant blocking layer comprises at least one InAlAs layer.
64. according to the semiconductor optical device of claim 61, wherein, the described second dopant blocking layer comprises at least one InGaAlAs layer.
65. according to the semiconductor optical device of claim 61, wherein, the described second dopant blocking layer comprises at least one InAlAs layer and at least one InGaAlAs layer.
66. according to the semiconductor optical device of claim 49, wherein, described active area comprises a layer that energy is luminous.
67. according to the semiconductor optical device of claim 49, wherein, described active area comprises a light absorbing layer of energy.
68. according to the semiconductor optical device of claim 49, wherein, described active area comprises the layer of an energy light modulated.
69. according to the semiconductor optical device of claim 49, wherein, described active area comprises a layer that can amplify light.
70. a semiconductor optical device comprises:
The substrate of one first conduction type;
Be located at a mesa structure on the described substrate, described mesa structure has both sides and comprises an active area; Described mesa structure also comprises first a dopant blocking layer that contacts with described active area, and the described first dopant blocking layer comprises a kind of material of selecting from the material group of InAlAs and InGaAlAs composition; With
One second dopant blocking layer, it is positioned at the both sides of described mesa structure.
71. the semiconductor optical device according to claim 70 also comprises: one first current barrier layer, it is formed on the described second dopant blocking layer; One the 3rd dopant blocking layer, it is formed on described first current barrier layer; And the coating of one second conduction type, it is formed on described mesa structure and described the 3rd dopant blocking layer.
72., also be included in a plurality of current barrier layers that form between described first current barrier layer and described the 3rd dopant blocking layer according to the semiconductor optical device of claim 71.
73. according to the semiconductor optical device of claim 71, wherein, the described second dopant blocking layer comprises a kind of material of selecting from the material group of InAlAs and InGaAlAs composition.
74. according to the semiconductor optical device of claim 71, wherein, described the 3rd dopant blocking layer comprises a kind of material of selecting from the material group of InAlAs and InGaAlAs composition.
75. according to the semiconductor optical device of claim 71, wherein, the described first dopant blocking layer is positioned at above the described active area.
76. according to the semiconductor optical device of claim 71, also comprise second coating of the doping of one second conduction type, it contacts with the described first and second dopant blocking layers.
77. according to the semiconductor optical device of claim 76, wherein, second coating of described doping is mixed with a kind of dopant of P type.
78. according to the semiconductor optical device of claim 71, wherein, the thickness of the described second dopant blocking layer at about 300 dusts in 3000 dust scopes.
79. according to the semiconductor optical device of claim 71, wherein, the thickness of described the 3rd dopant blocking layer at about 300 dusts in 3000 dust scopes.
80. according to the semiconductor optical device of claim 70, wherein, the thickness of the described first dopant blocking layer at about 300 dusts in 800 dust scopes.
81. according to the semiconductor optical device of claim 70, wherein, described active area comprise one can be luminous when being excited layer.
82. according to the semiconductor optical device of claim 70, wherein, described active area comprises a light absorbing layer of energy.
83. according to the semiconductor optical device of claim 70, wherein, described active area comprises the layer of an energy light modulated.
84. according to the semiconductor optical device of claim 70, wherein, described active area comprises a layer that can amplify light.
85. a semiconductor optical device comprises:
The substrate of one first conduction type;
Be located at a mesa structure on the described substrate, described mesa structure has both sides and comprises an active area;
One first current barrier layer, it is located at the both sides of described mesa structure;
Second current barrier layer of one first conduction type, it is formed on described first current barrier layer;
One first dopant blocking layer, it is formed on described second current barrier layer, and the described first dopant blocking layer comprises a kind of material of selecting from the material group of the composition of InAlAs and InGaAlAs; And
The coating of one second conduction type, it is formed on described mesa structure and the described first dopant blocking layer.
86. 5 semiconductor optical device also comprises one second dopant blocking layer according to Claim 8, it is positioned at above the described active area.
87. 6 semiconductor optical device according to Claim 8, wherein, the described second dopant blocking layer comprises a kind of material of selecting from the material group that InAlAs and InGaAlAs form.
88. 6 semiconductor optical device according to Claim 8, wherein, the thickness of the described second dopant blocking layer at about 300 dusts in 800 dust scopes.
89. 5 semiconductor optical device also comprises one the 3rd dopant blocking layer according to Claim 8, it is between the both sides and described first current barrier layer of described banded table top.
90. 9 semiconductor optical device according to Claim 8, wherein, described the 3rd dopant blocking layer comprises a kind of material of selecting from the material group that InAlAs and InGaAlAs form.
91. 9 semiconductor optical device according to Claim 8, wherein, the thickness of described the 3rd dopant blocking layer at about 300 dusts in 3000 dust scopes.
92. 6 semiconductor optical device according to Claim 8 also comprises first coating of the doping of one second conduction type, it contacts with the described second dopant blocking layer.
93. according to the semiconductor optical device of claim 92, wherein, second coating of described doping is mixed with a kind of dopant of P type.
94. 5 semiconductor optical device according to Claim 8, wherein, the thickness of the described first dopant blocking layer at about 300 dusts in 3000 dust scopes.
95. an opto-electronic device comprises:
The substrate of one first conduction type;
Be located at a mesa structure on the described substrate, described mesa structure has both sides and comprises an active area, described active area is also at least one side and a dopant blocking layer adjacency, and described dopant blocking layer comprises a kind of material of selecting from the material group of InAlAs and InGaAlAs composition; And
An insulating barrier, it is positioned at the both sides of described mesa structure.
96. according to the opto-electronic device of claim 95, wherein, described mesa structure also comprises: the coating of one second conduction type, it is formed on the described mesa structure; And an ohmic contact layer, it is formed on the described coating.
97. according to the opto-electronic device of claim 95, wherein, described dopant blocking layer is positioned at above the described active area.
98. according to the opto-electronic device of claim 95, also comprise second coating of the doping of one second conduction type, it contacts with described dopant blocking layer.
99. according to the opto-electronic device of claim 98, wherein, second coating of described doping is mixed with a kind of dopant of P type.
100. according to the opto-electronic device of claim 95, wherein, described dopant blocking layer is an epitaxially grown layer.
101. according to the opto-electronic device of claim 95, wherein, the thickness of described dopant blocking layer at about 300 dusts in 800 dust scopes.
102. according to the opto-electronic device of claim 95, wherein, described active area comprises a light absorbing layer of energy.
103. according to the opto-electronic device of claim 95, wherein, described active area comprises the layer of an energy light modulated.
104. according to the opto-electronic device of claim 95, wherein, described insulating barrier is formed by polyimides.
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| CN1309127C (en) * | 2003-09-30 | 2007-04-04 | 夏普株式会社 | Monolithic multi-wavelength laser device including a plurality of lasing parts and method of fabricating the same |
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| JPH0918079A (en) * | 1995-06-27 | 1997-01-17 | Mitsubishi Electric Corp | Semiconductor device and manufacture thereof |
| JP2812273B2 (en) * | 1995-10-27 | 1998-10-22 | 日本電気株式会社 | Semiconductor laser |
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