CN1378093A - 基板装置、电光学装置及其制造方法和电子仪器 - Google Patents
基板装置、电光学装置及其制造方法和电子仪器 Download PDFInfo
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- CN1378093A CN1378093A CN02108003A CN02108003A CN1378093A CN 1378093 A CN1378093 A CN 1378093A CN 02108003 A CN02108003 A CN 02108003A CN 02108003 A CN02108003 A CN 02108003A CN 1378093 A CN1378093 A CN 1378093A
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
- H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
- H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Nonlinear Science (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Thin Film Transistor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
Claims (27)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP85751/01 | 2001-03-23 | ||
JP85751/2001 | 2001-03-23 | ||
JP2001085751 | 2001-03-23 | ||
JP2002014608A JP2002353424A (ja) | 2001-03-23 | 2002-01-23 | 基板装置の製造方法及び基板装置、電気光学装置の製造方法及び電気光学装置、並びに電子機器 |
JP14608/2002 | 2002-01-23 | ||
JP14608/02 | 2002-01-23 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1378093A true CN1378093A (zh) | 2002-11-06 |
CN1205503C CN1205503C (zh) | 2005-06-08 |
Family
ID=26611953
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB021080038A Expired - Lifetime CN1205503C (zh) | 2001-03-23 | 2002-03-22 | 基板装置、电光学装置及其制造方法和电子仪器 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6750476B2 (zh) |
JP (1) | JP2002353424A (zh) |
KR (1) | KR100449795B1 (zh) |
CN (1) | CN1205503C (zh) |
TW (1) | TW560071B (zh) |
Cited By (3)
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CN103681695A (zh) * | 2013-12-13 | 2014-03-26 | 深圳市华星光电技术有限公司 | 薄膜晶体管阵列基板、制造方法及液晶显示装置 |
CN104143562A (zh) * | 2013-05-09 | 2014-11-12 | 三星显示有限公司 | 有机发光二极管显示器 |
CN104752436A (zh) * | 2013-12-26 | 2015-07-01 | 乐金显示有限公司 | 阵列基板 |
Families Citing this family (26)
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DE10105725B4 (de) * | 2001-02-08 | 2008-11-13 | Infineon Technologies Ag | Halbleiterchip mit einem Substrat, einer integrierten Schaltung und einer Abschirmvorrichtung |
JP4376522B2 (ja) * | 2003-01-24 | 2009-12-02 | シャープ株式会社 | 電磁波検出器 |
US6759277B1 (en) * | 2003-02-27 | 2004-07-06 | Sharp Laboratories Of America, Inc. | Crystalline silicon die array and method for assembling crystalline silicon sheets onto substrates |
JP4794810B2 (ja) * | 2003-03-20 | 2011-10-19 | シャープ株式会社 | 半導体装置の製造方法 |
US6988688B2 (en) * | 2003-08-08 | 2006-01-24 | Eastman Kodak Company | Web winding apparatus having traveling, gimbaled cinch roller and winding method |
JP4677713B2 (ja) * | 2003-11-25 | 2011-04-27 | セイコーエプソン株式会社 | 電気光学装置用基板、電気光学装置用基板の製造方法、電気光学装置および電子機器 |
JP4666277B2 (ja) * | 2004-01-16 | 2011-04-06 | セイコーエプソン株式会社 | 電気光学装置の製造方法 |
US7736964B2 (en) * | 2004-11-22 | 2010-06-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and method for manufacturing the same |
US20060118869A1 (en) * | 2004-12-03 | 2006-06-08 | Je-Hsiung Lan | Thin-film transistors and processes for forming the same |
JP4942341B2 (ja) * | 2004-12-24 | 2012-05-30 | 三洋電機株式会社 | 表示装置 |
JP4111195B2 (ja) * | 2005-01-26 | 2008-07-02 | セイコーエプソン株式会社 | デバイスとその製造方法及び電気光学装置とその製造方法並びに電子機器 |
US7768014B2 (en) * | 2005-01-31 | 2010-08-03 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and manufacturing method thereof |
US7387946B2 (en) * | 2005-06-07 | 2008-06-17 | Freescale Semiconductor, Inc. | Method of fabricating a substrate for a planar, double-gated, transistor process |
TWI270928B (en) * | 2005-07-22 | 2007-01-11 | Sino American Silicon Products | Method of manufacturing composite wafer sructure |
JP4586732B2 (ja) * | 2006-01-06 | 2010-11-24 | セイコーエプソン株式会社 | 電気光学装置及びその製造方法並びに電子機器 |
JP5247008B2 (ja) * | 2006-06-07 | 2013-07-24 | キヤノン株式会社 | 透過型の表示装置 |
GB2459647A (en) * | 2008-04-28 | 2009-11-04 | Sharp Kk | Photosensitive structure with a light shading layer |
US20100072579A1 (en) * | 2008-09-23 | 2010-03-25 | Andreas Thies | Through Substrate Conductors |
JP5476878B2 (ja) * | 2009-09-14 | 2014-04-23 | カシオ計算機株式会社 | 発光パネルの製造方法 |
JP2012208294A (ja) * | 2011-03-29 | 2012-10-25 | Seiko Epson Corp | 電気光学装置の製造方法、電気光学装置、投射型表示装置および電子機器 |
US20150168773A1 (en) * | 2013-12-13 | 2015-06-18 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Thin film transistor array substrate, manufacturing method thereof, and liquid crystal display device |
US20150257278A1 (en) * | 2014-03-06 | 2015-09-10 | Tactotek Oy | Method for manufacturing electronic products, related arrangement and product |
JP2016213508A (ja) * | 2016-09-07 | 2016-12-15 | 株式会社ジャパンディスプレイ | 薄膜トランジスタ回路基板 |
KR102662278B1 (ko) * | 2016-11-30 | 2024-05-02 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
CN109920795A (zh) | 2017-12-12 | 2019-06-21 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法、显示装置 |
KR20220061335A (ko) * | 2020-11-05 | 2022-05-13 | 삼성디스플레이 주식회사 | 디스플레이 장치 |
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DE19543540C1 (de) * | 1995-11-22 | 1996-11-21 | Siemens Ag | Vertikal integriertes Halbleiterbauelement mit zwei miteinander verbundenen Substraten und Herstellungsverfahren dafür |
FR2765398B1 (fr) * | 1997-06-25 | 1999-07-30 | Commissariat Energie Atomique | Structure a composant microelectronique en materiau semi-conducteur difficile a graver et a trous metallises |
CN1267781C (zh) * | 1998-03-19 | 2006-08-02 | 精工爱普生株式会社 | 采用开关元件的衬底、液晶和投影型显示装置及电子仪器 |
DE19813239C1 (de) * | 1998-03-26 | 1999-12-23 | Fraunhofer Ges Forschung | Verdrahtungsverfahren zur Herstellung einer vertikalen integrierten Schaltungsstruktur und vertikale integrierte Schaltungsstruktur |
KR100268419B1 (ko) | 1998-08-14 | 2000-10-16 | 윤종용 | 고집적 반도체 메모리 장치 및 그의 제조 방법 |
KR100309213B1 (ko) | 1998-12-08 | 2002-11-23 | 엘지.필립스 엘시디 주식회사 | 회절노광기술을이용한액정표시장치제조방법 |
TW490756B (en) * | 1999-08-31 | 2002-06-11 | Hitachi Ltd | Method for mass production of semiconductor integrated circuit device and manufacturing method of electronic components |
JP3440057B2 (ja) * | 2000-07-05 | 2003-08-25 | 唯知 須賀 | 半導体装置およびその製造方法 |
-
2002
- 2002-01-23 JP JP2002014608A patent/JP2002353424A/ja not_active Withdrawn
- 2002-03-19 TW TW091105204A patent/TW560071B/zh not_active IP Right Cessation
- 2002-03-20 US US10/101,382 patent/US6750476B2/en not_active Expired - Lifetime
- 2002-03-22 CN CNB021080038A patent/CN1205503C/zh not_active Expired - Lifetime
- 2002-03-22 KR KR10-2002-0015563A patent/KR100449795B1/ko active IP Right Grant
Cited By (6)
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CN104143562A (zh) * | 2013-05-09 | 2014-11-12 | 三星显示有限公司 | 有机发光二极管显示器 |
CN104143562B (zh) * | 2013-05-09 | 2019-07-26 | 三星显示有限公司 | 有机发光二极管显示器 |
CN103681695A (zh) * | 2013-12-13 | 2014-03-26 | 深圳市华星光电技术有限公司 | 薄膜晶体管阵列基板、制造方法及液晶显示装置 |
CN103681695B (zh) * | 2013-12-13 | 2016-09-28 | 深圳市华星光电技术有限公司 | 薄膜晶体管阵列基板、制造方法及液晶显示装置 |
CN104752436A (zh) * | 2013-12-26 | 2015-07-01 | 乐金显示有限公司 | 阵列基板 |
CN104752436B (zh) * | 2013-12-26 | 2018-04-10 | 乐金显示有限公司 | 阵列基板 |
Also Published As
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US20020145140A1 (en) | 2002-10-10 |
KR100449795B1 (ko) | 2004-09-22 |
KR20020075287A (ko) | 2002-10-04 |
JP2002353424A (ja) | 2002-12-06 |
CN1205503C (zh) | 2005-06-08 |
TW560071B (en) | 2003-11-01 |
US6750476B2 (en) | 2004-06-15 |
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