CN1299964A - Auto-alignment etching method of producing micro structure and infrared detector produced by the method - Google Patents
Auto-alignment etching method of producing micro structure and infrared detector produced by the method Download PDFInfo
- Publication number
- CN1299964A CN1299964A CN 00125862 CN00125862A CN1299964A CN 1299964 A CN1299964 A CN 1299964A CN 00125862 CN00125862 CN 00125862 CN 00125862 A CN00125862 A CN 00125862A CN 1299964 A CN1299964 A CN 1299964A
- Authority
- CN
- China
- Prior art keywords
- silicon
- layer
- thermocouple
- deposition
- strip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The present invention relates to a method for making microstructure by using self-aligning etching process and its made micromachinery thermopile infrared detector, belonging to the field of infrared detection. Its key process is adoption of self-aligning etching technology to prepare grating thermocouple cantilever structure whose periphery uses air layer to reduce thermal run-away and increase thermal resistance, so that it not only simplifies manufacture process of micromachinery thermopile infrared detector, but also raises its thermoelectric conversion efficiency, and the detector possesses high sensitivity.
Description
The present invention relates to be a kind of be the manufacturing of the gordian technique micromachined thermopile infrared detector, particularly device size made with the autoregistration corrosion technology at the micromachined thermopile infrared detector of submillimeter magnitude, belong to the infrared eye field.
At present, in industry-by-industry and departments such as industry, agricultural, medical science, traffic, infrared imaging, infrared measurement of temperature, infrared hygrometric, infrared treatment, infrared detection, infrared alarm, infrared remote sensing, infrared anti-false, Infrared Heating are the advanced technologies that every profession and trade falls over each other to select for use.In Military Application, in modern war and future war, all be absolutely necessary tactics and strategic means such as infrared imaging, infrared reconnaissance, infrared tracking, infrared guidance, infrared early warning, infrared counteraction.Infrared eye is a critical component the most basic in the infrared gear, is the heart of infrared facility.Thermopile IR detector then is a kind of of numerous infrared eyes, belongs to thermal infrared detector.Thermopile IR detector is based on Seebeck effect, and just thermoelectric effect is made, it basic composition is thermopair.Thermopair is by two kinds of different materials or material is identical and object that work function is different is formed, when they constitute the closed-loop path,, just produced electromotive force in the loop if having temperature difference between two nodes, this electromotive force is monitored, just can be reached a series of purposes such as monitoring.In the past, the making of thermopile IR detector is to use the method for mask vacuum coating that the thermocouple material is deposited on plastics or the ceramic substrate, and the device size that produces is bigger, and not can manufacture.
Along with the development of large scale integrated circuit, urgent day by day for the requirement of detector miniaturization, wish simultaneously and detector chip and post processing circuitry can be integrated.Under the prerequisite of this desirability, micromachined thermopile infrared detector arises at the historic moment.Compare with general infrared eye, its advantage is: one, have high sensitivity, the loose working environment and the spectral response of non-constant width; Two, with the standard ic process compatibility, with low cost and suitable batch process.At present, the manufacture method of more popular thermal reactor infrared eye is to corrode from the back side of silicon substrate with the silicon anisotropic etching agent on silicon substrate, erodes the silicon in centre, only stays the silicon-nitride and silicon oxide one silicon nitride (Si of about 1 micron thickness at the top
3N
4-SiO
2-Si
3N
4) sandwich layer (composite membrane), two kinds of different pyroelecthc properties materials (thermocouple) deposition and formation thermocouple are right.As shown in Figure 7,19 is thermocouple, and 27 is silicon nitride, and 29 is monox, and 28 is monocrystalline silicon.The cold junction that comprises the cold junction district is made of the same thick frame with silicon substrate around film, and it also is the supporter that erodes away structure that frame is not only radiating block.The hot-zone is that thermal reactor thermojunction radius is with interior diaphragm area.Because it is right that thermal reactor is that the composite membrane with whole layer supports thermocouple, do not have adiabatic environment between hot junction and the cold junction, make virtually heat can by thermocouple to by face to propagation everywhere, so conversion efficiency of thermoelectric is not high.In addition, also have employing to corrode overleaf after, carry out the way that etching forms suspension beam structure from the front, but required step is more in the technological process, has increased technology difficulty, makes that the yield rate of device is not high, and then has increased device cost.In the thermocouple material that adopts, bismuth-antimony (Bi-Sb) is arranged, polysilicon-Jin (Poly-Si-Au), tellurium-indium antimonide (Te-InSb), tellurium-Yin (Te-Ag) or the like, present trend is to adopt the system of polysilicon and gold or aluminium.This mainly is because silicon materials and CMOS standard integrated circuit technology have good compatibility.At present, the manufacturing process of these devices all requires to aim at photoetching on the silicon chip two sides, and technology difficulty is higher, has increased size of devices and cost.In addition, in the process of making thermopile IR detector, the structural design of device exists not enough, causes conversion efficiency of thermoelectric lower, also suddenly waits to improve.
It is the method for the manufacturing micromachined thermopile infrared detector of gordian technique with the autoregistration corrosion technology that one of purpose of the present invention is to provide a kind of, abandons tow sides alignment light lithography.So-called autoregistration corrosion technology promptly is meant and uses existing structural sheet, as silicon oxide layer or silicon nitride layer, utilizes its corrosion resistivity to some corrosive liquid, as the mask of one deck structure under the further corrosion, and replaces original photoresist mask.Way not only can be saved original photoetching process like this, simplifies manufacture process, and can make produced micromachined thermopile infrared detector show higher sensitivity.
Another object of the present invention is to provide a kind of usefulness micromachined thermopile infrared detector with special construction that above-mentioned new manufacture method is made, it is characterized in that adopting the surrounding air layer to reduce heat dissipation, the palisade thermocouple that increases thermal resistance is to cantilever design.
The present invention implements by following process:
(1) at first, on monocrystalline silicon piece, method deposition one deck silicon nitride layer with low-pressure chemical vapor deposition (LPCVD), and then deposition cryogenic oxidation silicon (LTO) layer, then use low pressure chemical gas phase process deposit spathic silicon layer again, the method of injecting with ion is carried out the boron annealing of mixing, and polysilicon layer is become have the P type silicon of certain face resistance;
(2) on silicon layer, make the shape that is used to form the thermocouple silicon strip then by lithography, obtain required thermocouple silicon strip with plasma etching method;
(3) make the zone that is used to form uptake zone and supporter by lithography, with photoresist this zone is protected, erode the monox of remainder with hydrofluorite; Then polysilicon strip is carried out oxidation, constitute the mixed oxidization silicon layer with the low-temperature oxidation silicon layer;
(4) be that mask carries out the autoregistration corrosion with the mixed oxidization silicon layer, fall silicon nitride layer, form grating structure with phosphoric acid corrosion; Then the lithography fair lead figure forms fairlead with hydrofluorite corrosion oxidation silicon, at whole surface deposition metal level; Make the bonding jumper shape that is used to form thermocouple by lithography, the polysilicon strip of bonding jumper and doping is realized ohm basis by fairlead, and it is right to form thermocouple, becomes the main composition of thermal reactor;
(5) form the infrared radiation uptake zone, improve absorption efficiency by the deposition black matrix; Then adopt the autoregistration caustic solution, utilize the monox on the parcel polysilicon strip to make mask, directly, form palisade cantilever design and support frame, constitute the micromechanical heat stack detector of forming by frame, hole and thermal reactor three parts with tetramethyl aqua ammonia corrosion silicon.
Below in conjunction with accompanying drawing, sets forth in detail the present invention.
Fig. 1 is the synoptic diagram that forms silicon strip on silicon substrate.
Fig. 2 is the synoptic diagram that forms the autoregistration etching mask.
Fig. 3 is the synoptic diagram that utilizes the autoregistration corrosion technology to remove silicon nitride and form fairlead.
Fig. 4 forms the right synoptic diagram of thermocouple.
Fig. 5 is the structure and the local enlarged diagram of the thermopile IR detector of making according to the present invention.
Fig. 6 is the structural representation of thermopile IR detector.
Fig. 7 is the synoptic diagram of the thermopile IR detector of back side corrosion technology making
Among the figure:
The 13-pin, 17-frame, 18-hole, 19-thermal reactor, 20-thermojunction district, 21-cold junction district, 22-absorption layer, 23-support membrane, 24-polysilicon strip, 25-bonding jumper, 26-fairlead, 27-silicon nitride layer, 28-monocrystalline substrate, 29-silicon oxide layer.
The technical process of concrete making thermopile IR detector is as follows:
At first, on monocrystalline substrate 28, as shown in Figure 1, use earlier low-pressure chemical vapor deposition (LPCVD) Method deposition one deck silicon nitride layer 27, wherein the LPCVD depositing temperature is 750～850 ℃, silicon nitride layer Thickness be 0.1～0.2 micron; And then deposition cryogenic oxidation silicon (LTO) layer 29, thickness is 0.3～0.7 micron; The thermal conductivity factor of this two layer medium layer is littler, consists of the right basic support structure of thermocouple. Connect With the method for low-pressure chemical vapor deposition deposition one deck polysilicon (Poly-Si) layer, thickness is 0.4～0.8 micron, by the method for Implantation, doped with boron ion in polysilicon, boron-doping concentration is 1018
-10
19Centimetre-3The order of magnitude in 900～1000 ℃ of lower insulations of temperature annealing in 30 minutes, makes polycrystalline then Silicon layer becomes the p-type silicon with certain surface resistance. Photoetching thermocouple silicon strip shape is used plasma etching then Method forms thermocouple silicon strip 24.
On this basis, carry out earlier photoetching, protect with photoresist the oxidation on uptake zone 22 and the frame 17 Silicon layer 29 erodes the silica of remainder then with hydrofluoric acid, because polysilicon strip 24 and nitrogenize Silicon layer 27 is strong for the corrosion resistance of hydrofluoric acid, thereby after photoetching, forms grating structure, such as figure 2-1, the B direction among the corresponding diagram 5-1. And in the uptake zone 22 with frame 17, shown in Fig. 2-2, A direction among the corresponding diagram 5-1, the silicon oxide layer 29 on the silicon nitride layer 27 still exists. Then, advance The row thermal oxide forms the thermal oxide layer that one deck wraps up polysilicon layer 24, and is common with low-temperature oxidation silicon layer 29 Consist of the silicon oxide layer 29 that mixes. This layer mixed oxide layer be the autoregistration mask of corroding silicon nitride just.
Then use the phosphoric acid corrosion silicon nitride, because silica is for the corrosion resistance of phosphoric acid, silicon oxide layer 29 Just become the mask of corroding silicon nitride layer 27, carry out the autoregistration corruption with the silicon oxide layer that wraps up polysilicon strip Erosion just need not to have reduced technology difficulty by the photoetching process alignment. After excessive erosion, just removed Between the polysilicon strip 24 and the silicon nitride of thermocouple pair and frame 17, expose the monocrystalline silicon of substrate 28, Shown in Fig. 3-1, corresponding to the B direction among Fig. 5-1, thereby the thermal resistance from the hot junction to the cold junction is increased Add, can improve conversion efficiency of thermoelectric, and then improve performance. And on uptake zone 22 and frame 17, Because the protection of silicon oxide layer, silicon nitride layer still exists, such as Fig. 3-2, the A side among the corresponding diagram 5-1 To. To the thermal oxidation silicon above the beam part polysilicon strip, first lithography fair lead figure is used hydrofluoric acid then Erode silica, form fairlead 26, expose polysilicon strip 24, such as Fig. 3-1.
Form the right process of thermocouple, as shown in Figure 4, earlier at the surface deposition metal level, make then heat by lithography The shape of idol bonding jumper is through excessive erosion with peel off and obtain bonding jumper 25. Bonding jumper 25 is by fairlead 26 Realize Ohmic contact with the polysilicon strip 24 that mixes, obtain good electricity and connect. As shown in Figure 4, The link position of bonding jumper 25 and polysilicon strip 24 is in the cantilever beam part, namely corresponding to the B among Fig. 5-1 Direction.
Fig. 5-the 1st, the top view of thermal reactor Infrared Detectors. Detector is by frame 17, hole 18 and thermal reactor 19 Consist of. Frame 17 comprises silicon nitride layer 27 and the silicon oxide layer 29 of silicon substrate and deposition, is not only heat The support of pile structure is again the medium of heat radiation. The hole 18 that is corroded out is thermal reactor 19 and frame 17 Separately, play a part heat insulationly, also intercepted by the air layer 18 in the hole 18 between the thermocouple simultaneously, so that The infra-red radiation that is absorbed by thermojunction district 20 can only conduct along thermocouple subtend cold junction direction, and has reduced By the conduction of the horizontal heat of support membrane, so just thermal resistance can be increased between the thermocouple, device can be improved Sensitivity. Cold junction district 21 is parts of frame 17, and the absorbed layer 22 that is positioned at thermojunction district 20 is by black Body formation-black matrix can be various metal black, such as Bi, and Au, Ag is black etc. The support membrane 23 of thermocouple is Formed by silica and silicon nitride, play a part corrosion protective layers and support thermal reactor 19. Thermal reactor 19 by A large amount of thermocouples is to forming, and Fig. 5-2 has shown its situation about linking to each other with executive circuit by pin 13. A typical thermal reactor of the present invention is to be made of 15 pairs of thermocouples, wherein the area of uptake zone be 230 μ m * 290 μ m, every couple of long 800 μ m of thermocouple, wide 10 μ m.
Fig. 5-the 2nd, the part enlarged drawing of thermal reactor 19. As shown in the figure: it is by the thermocouple that is arranged in parallel pair Consist of, thermocouple is to adopting overlapping stacked form. Every pair of thermocouple is by the polysilicon strip 24 and the bonding jumper that mix 25 consist of, bonding jumper gold commonly used (Au), chromium (Cr), tantalum (Ta), silver (Ag) etc. Bonding jumper 25 Be deposited on the silicon strip 24, so just reduced dutycycle, increased the thermocouple logarithm of unit are, can To improve device performance. Bonding jumper 25 realizes that by fairlead 26 electricity links to each other to form with silicon strip 24 Thermocouple pair. Separate by hole 18 between the silicon strip, reduced in the past the transverse heat transfer by support membrane, So that heat can only be propagated along the silicon strip direction, reduced significantly hot dissipation, the thermoelectric conversion effect of Effective Raise Rate.
Fig. 6 is the structural representation of the final thermal reactor Infrared Detectors that forms. Fig. 6-1 corresponding diagram 5-1 wherein The B direction, the A direction of Fig. 6-2 corresponding diagram 5-1. As shown in the figure, utilize parcel polysilicon strip 24 Silicon oxide layer 29 and bonding jumper 25 as mask, with tetramethyl aqua ammonia (TMAH) directly etching, Obtain the suspension beam structure of palisade, shown in Fig. 6-1, thermocouple is separated by hole 18. In the uptake zone part, Deposition black matrix 22 consists of the hot junction of thermoelectric pile in order to infrared absorption, and black matrix is generally carbon black and each Plant metal black, deceive such as platinum black, silver etc.; Framework 17 is by monocrystalline silicon 28, silicon nitride layer 27 and silica Layer 29 forms, and is consistent with the temperature of surrounding environment, consists of the cold junction of thermoelectric pile. Arrive cold junction via the hot junction Heat conduction because the good thermal insulation of ambient air can only be propagated along the thermocouple of palisade, for heat The raising of photoelectric transformation efficiency is very favorable. Like this, just obtained an infrared spy of complete thermoelectric pile Survey device.
Further specify substantive distinguishing features of the present invention and obvious improvement below by embodiment, but the present invention only limits to described embodiment absolutely not.
Embodiment 1
On a monocrystalline silicon piece, earlier under 800 ℃, with method deposition one deck silicon nitride (Si of low-pressure chemical vapor deposition (LPCVD)
3N
4) layer 27, thickness is 0.1 micron.Deposit cryogenic oxidation silicon (LTO) layer 29 then, thickness is 0.5 micron.Then depositing a layer thickness with the method for low-pressure chemical vapor deposition again is 0.6 micron polysilicon layer, carries out the boron doping with the method that ion injects, and makes the concentration of boron be approximately 10
18-10
19Centimetre
-3The order of magnitude is incubated 30 minutes down at 950 ℃ then, ion is injected anneal.Then, on the silicon layer after the doping, make the shape that is used to form the thermocouple silicon strip by lithography, obtain required polysilicon strip 24 with the method for dry etching.Then, make the zone that is used to form uptake zone and support frame by lithography, purpose is to protect the silica medium film in these zones, erodes the monox of remainder then with hydrofluorite.Under 1100 ℃, polysilicon strip 24 is carried out oxidation, form a layer thickness and be 0.4 micron silicon oxide layer, constitute the oxide layer 29 of mixing with cryogenic oxidation silicon (LTO) layer is common.Because between the polysilicon strip and and framework between be silicon nitride layer 27, so 29 of silicon oxide layers exist on polysilicon strip, uptake zone and the support frame.Then, carry out autoregistration corrosion as mask with above-mentioned silicon oxide layer 29, with phosphoric acid corrosion fall between the polysilicon strip, silicon nitride layer between thermocouple district and the framework, expose substrate monocrystal silicon, form grating structure.Then the lithography fair lead figure forms fairlead 26 with hydrofluorite corrosion oxidation silicon, exposes polysilicon strip 24.At whole surface deposition metal level, can select chromium (Cr)-Jin (Au) in the present embodiment for use is metal level etc. again.Make the bonding jumper shape that is used to form thermocouple then by lithography, obtain bonding jumper 25 with the method for wet etching, bonding jumper 25 is realized Ohmic contact with doped polycrystalline silicon strip 24 by fairlead 26, forms thermocouple.Below technology form the infrared radiation uptake zone exactly, earlier carve the uptake zone shape in surface light, deposit carbon black matrix 22 in the above then is then by the lift-off technology district that is absorbed.Corrode the technology of body silicon then, in order to obtain the suspension beam structure of palisade.Here also adopt the autoregistration caustic solution, saved the technology of photoetching corrosion structure, as mask, directly used tetramethyl aqua ammonia (TMAH) to corrode with the silicon oxide layer on the parcel polysilicon strip 24, form palisade cantilever design and support frame, substrate can all be removed except that framework.Utilize the black matrix 22 of uptake zone to absorb infrared radiation, the hot junction of thermoelectric pile, and,, constitute the cold junction of thermoelectric pile because its temperature with environment is consistent in framework 17 1 sides, just obtain a complete thermopile IR detector.
Embodiment 2
Deposit one deck silicon nitride layer 27 with the LPCVD method on the monocrystalline silicon piece, thickness is 0.2 micron, depositing temperature is 820 ℃, deposit LTO layer 29 then, thickness is 0.4 micron, and polysilicon layer thickness is 0.8 micron, boron-doping after annealing temperature is 900 ℃, the metal level that deposits on the polysilicon strip is an aluminium, and the deposition black matrix is the metal platinum black, and all the other are with embodiment 1.
Embodiment 3
Plated metal is a silver (Ag) on the polysilicon strip, and the deposition black matrix is that metallic copper is black, and all the other are with embodiment 1.
Claims (9)
1, a kind of autoregistration corrosion technology is gordian technique it makes the method for micromachined thermopile infrared detector, comprises silicon substrate, silicon nitride layer, silicon oxide layer, it is characterized in that:
(1) at first, on monocrystalline silicon piece, method deposition one deck silicon nitride layer with low-pressure chemical vapor deposition (LPCVD), and then deposition cryogenic oxidation silicon (LTO) layer, then use low pressure chemical gas phase process deposit spathic silicon layer again, the method of injecting with ion is carried out the boron annealing of mixing, and polysilicon layer is become have the P type silicon of certain face resistance;
(2) on silicon layer, make the shape that is used to form the thermocouple silicon strip then by lithography, obtain required thermocouple silicon strip with plasma etching method;
(3) make the zone that is used to form uptake zone and supporter by lithography, with photoresist this zone is protected, erode the monox of remainder with hydrofluorite; Then polysilicon strip is carried out oxidation, constitute the mixed oxidization silicon layer with the low-temperature oxidation silicon layer;
(4) be that mask carries out the autoregistration corrosion with the mixed oxidization silicon layer, fall silicon nitride layer, form grating structure with phosphoric acid corrosion; Then the lithography fair lead figure forms fairlead with hydrofluorite corrosion oxidation silicon, at whole surface deposition metal level; Make the bonding jumper shape that is used to form thermocouple by lithography, the polysilicon strip of bonding jumper and doping is realized ohm basis by fairlead, and it is right to form thermocouple, becomes the main composition of thermal reactor;
(5) form the infrared radiation uptake zone, improve absorption efficiency by the deposition black matrix; Then adopt the autoregistration caustic solution, utilize the monox on the parcel polysilicon strip to make mask, directly, form palisade cantilever design and support frame, constitute the micromechanical heat stack detector of forming by frame, hole and thermal reactor three parts with tetramethyl aqua ammonia corrosion silicon.
2, by the method for the described manufacturing micro-mechanical thermopile infrared detection of claim 1, it is characterized in that 850 ℃ of described low-pressure chemical vapor deposition temperature 750 ∽, 0.2 micron of silicon nitride layer thickness 0.1 ∽.
3,, it is characterized in that the described low humidity silicon oxide layer thickness of deposition again is 0.7 micron of 0.3 ∽ by the method for the described manufacturing micro-mechanical thermopile infrared detection of claim 1; Low temperature word gas phase process deposit spathic silicon layer thickness is 0.8 micron of 0.4 ∽.
4, by the method for the described manufacturing micro-mechanical thermopile infrared detection of claim 1, it is characterized in that: described boron doping concentration 10
18∽ 10
19Centimetre
-3The order of magnitude is incubated 30 minutes then under 1000 ℃ of temperature of 900 ∽.
5, the micromachined thermopile infrared detector of making by the described method of claim 1 is characterized in that:
(1) detector is made of frame (17), hole (18) and thermal reactor (19);
(2) frame (17) comprises the silicon nitride layer (27) and the silicon oxide layer (29) of silicon substrate and deposition; Being not only the support of thermal reactor structure, is again heat eliminating medium;
(3) hole that is corroded out (18) separates thermal reactor (19) and frame (17), is also intercepted by the air layer in hole (18) between the thermocouple, and the infrared radiation that thermojunction district (20) is absorbed can only conduct along thermocouple subtend cold junction direction;
(4) cold junction district (21) are the parts of frame (17), and it is made up of with silicon oxide layer (29) monocrystalline silicon (28), silicon nitride layer (27);
(5) be positioned at absorption layer (22) the deposition black matrix of thermojunction district (20),, constitute the hot junction of thermoelectric pile in order to absorb infrared radiation.
6, by the described micromachined thermopile infrared detector of claim 5, it is characterized in that described thermal reactor (19) be by the thermocouple that is arranged in parallel to constituting, thermocouple is to adopting the form of overlapping accumulation; Every pair of thermocouple is made of polysilicon strip (24) that mixes and bonding jumper (25); Bonding jumper (25) is deposited on the silicon strip (24), and it is right to form thermocouple to realize that by fairlead (26) electricity links to each other.
7, by claim 5 or 6 described micromachined thermopile infrared detectors, it is characterized in that separating by hole (18) between the described silicon strip (24), bonding jumper is used gold, chromium, tantalum, silver, metal always and is made.
8,, it is characterized in that described absorption layer (22) deposition black matrix is various metal black, as bismuth, gold, silver by the described micromachined thermopile infrared detector of claim 5.
9,, it is characterized in that described thermal reactor is made of 15 pairs of thermocouples, area 230 * 290 μ m of uptake zone wherein, every couple of long 800 μ m of thermocouple, wide 10 μ m by the described micromachined thermopile infrared detector of claim 6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 00125862 CN1115731C (en) | 2000-10-26 | 2000-10-26 | Auto-alignment etching method of producing micro structure and infrared detector produced by the method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 00125862 CN1115731C (en) | 2000-10-26 | 2000-10-26 | Auto-alignment etching method of producing micro structure and infrared detector produced by the method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1299964A true CN1299964A (en) | 2001-06-20 |
| CN1115731C CN1115731C (en) | 2003-07-23 |
Family
ID=4591644
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 00125862 Expired - Fee Related CN1115731C (en) | 2000-10-26 | 2000-10-26 | Auto-alignment etching method of producing micro structure and infrared detector produced by the method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1115731C (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1307410C (en) * | 2001-10-22 | 2007-03-28 | 中国科学院上海冶金研究所 | Structure self-aligning method for making infrared absorption layer of infrared snesor for micromechanical heat stack |
| CN101917174A (en) * | 2010-08-03 | 2010-12-15 | 中国科学院上海微***与信息技术研究所 | Method for manufacturing sub-micrometer clearance microstructure and micro-mechanical resonator manufactured by using sub-micrometer clearance microstructure |
| CN101445614B (en) * | 2007-11-28 | 2012-02-15 | 中国科学院微电子研究所 | Method for manufacturing polyimide organic hollowed membrane |
| CN106017696A (en) * | 2016-07-13 | 2016-10-12 | 上海交通大学 | Thermal resistance-type thin film thermopile-type transient heat flow meter and manufacturing method |
| CN110143567A (en) * | 2019-05-17 | 2019-08-20 | 中国科学院上海微***与信息技术研究所 | A kind of hanging black dielectric film and preparation method thereof and application |
| CN115196586A (en) * | 2022-06-23 | 2022-10-18 | 无锡物联网创新中心有限公司 | Uncooled infrared detector and manufacturing method thereof |
| CN115196586B (en) * | 2022-06-23 | 2024-05-10 | 无锡物联网创新中心有限公司 | Uncooled infrared detector and manufacturing method thereof |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103985811B (en) * | 2014-05-29 | 2016-07-27 | 赣南师范学院 | A kind of field effect transistor on-chip array thermoelectric converter and fully self aligned manufacturing process thereof |
-
2000
- 2000-10-26 CN CN 00125862 patent/CN1115731C/en not_active Expired - Fee Related
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1307410C (en) * | 2001-10-22 | 2007-03-28 | 中国科学院上海冶金研究所 | Structure self-aligning method for making infrared absorption layer of infrared snesor for micromechanical heat stack |
| CN101445614B (en) * | 2007-11-28 | 2012-02-15 | 中国科学院微电子研究所 | Method for manufacturing polyimide organic hollowed membrane |
| CN101917174A (en) * | 2010-08-03 | 2010-12-15 | 中国科学院上海微***与信息技术研究所 | Method for manufacturing sub-micrometer clearance microstructure and micro-mechanical resonator manufactured by using sub-micrometer clearance microstructure |
| CN101917174B (en) * | 2010-08-03 | 2013-01-09 | 中国科学院上海微***与信息技术研究所 | Method for manufacturing sub-micrometer clearance microstructure and micro-mechanical resonator manufactured by using sub-micrometer clearance microstructure |
| CN106017696A (en) * | 2016-07-13 | 2016-10-12 | 上海交通大学 | Thermal resistance-type thin film thermopile-type transient heat flow meter and manufacturing method |
| CN106017696B (en) * | 2016-07-13 | 2019-06-21 | 上海交通大学 | Thermal resistance thin film thermoelectric heap-type transient heat flow meter and preparation method |
| CN110143567A (en) * | 2019-05-17 | 2019-08-20 | 中国科学院上海微***与信息技术研究所 | A kind of hanging black dielectric film and preparation method thereof and application |
| CN115196586A (en) * | 2022-06-23 | 2022-10-18 | 无锡物联网创新中心有限公司 | Uncooled infrared detector and manufacturing method thereof |
| CN115196586B (en) * | 2022-06-23 | 2024-05-10 | 无锡物联网创新中心有限公司 | Uncooled infrared detector and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1115731C (en) | 2003-07-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100440561C (en) | Infrared detector of micro mechanical thermopile, and preparation method | |
| US5059543A (en) | Method of manufacturing thermopile infrared detector | |
| US5100479A (en) | Thermopile infrared detector with semiconductor supporting rim | |
| US9222837B2 (en) | Black silicon-based high-performance MEMS thermopile IR detector and fabrication method | |
| CN101776483B (en) | Non-refrigerant thermopile infrared detector and manufacturing method thereof | |
| US6198098B1 (en) | Microstructure for infrared detector and method of making same | |
| US20140326883A1 (en) | Nanowire thermoelectric infrared detector | |
| KR100313909B1 (en) | IR sensor and method for fabricating the same | |
| CN1115731C (en) | Auto-alignment etching method of producing micro structure and infrared detector produced by the method | |
| CN113049053B (en) | High-performance MEMS flow sensor and preparation method thereof | |
| CN210926061U (en) | Thermopile infrared detector | |
| CN110165043B (en) | Thermoelectric infrared detector based on black film and preparation method thereof | |
| CN1168149C (en) | Micromechanical thermoelectric pile infrared detector array with inclined drawn suspension beam support membrane structure | |
| CN1307410C (en) | Structure self-aligning method for making infrared absorption layer of infrared snesor for micromechanical heat stack | |
| CN105576070B (en) | Cavity forming method, thermopile IR detector and preparation method thereof | |
| WO1993025877A1 (en) | Use of vanadium oxide in microbolometer sensors | |
| CN100562725C (en) | Micromachined thermopile infrared detector and manufacture method thereof | |
| EP0873500A1 (en) | Structures for temperature sensors and infrared detectors | |
| Park et al. | Tin oxide micro gas sensor for detecting CH3SH | |
| JP2003282961A (en) | Thermocouple | |
| CN1297802C (en) | All silicon integrated flow sensor and method for manufacturing the same | |
| CN116963574B (en) | Infrared thermopile sensor and manufacturing method thereof | |
| CN218824055U (en) | Gas sensor based on Peltier effect | |
| JP3409918B2 (en) | Manufacturing method of infrared detecting element | |
| Zhou et al. | Single-side micromachined ultra-small thermopile IR detecting pixels for dense-array integration |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C06 | Publication | ||
| PB01 | Publication | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20030723 Termination date: 20151026 |
|
| EXPY | Termination of patent right or utility model |