CN1311531C - 微波等离子体处理装置 - Google Patents

微波等离子体处理装置 Download PDF

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Publication number
CN1311531C
CN1311531C CNB028074890A CN02807489A CN1311531C CN 1311531 C CN1311531 C CN 1311531C CN B028074890 A CNB028074890 A CN B028074890A CN 02807489 A CN02807489 A CN 02807489A CN 1311531 C CN1311531 C CN 1311531C
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CN
China
Prior art keywords
plasma
microwave
gas
igniting
exciatiaon
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CNB028074890A
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English (en)
Chinese (zh)
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CN1502121A (zh
Inventor
大见忠弘
平山昌树
须川成利
后藤哲也
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication of CN1311531C publication Critical patent/CN1311531C/zh
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32321—Discharge generated by other radiation
    • H01J37/32339—Discharge generated by other radiation using electromagnetic radiation

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
CNB028074890A 2001-03-28 2002-03-28 微波等离子体处理装置 Expired - Fee Related CN1311531C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001094277A JP4799748B2 (ja) 2001-03-28 2001-03-28 マイクロ波プラズマプロセス装置、プラズマ着火方法、プラズマ形成方法及びプラズマプロセス方法
JP0942772001 2001-03-28
PCT/JP2002/003113 WO2002080254A1 (fr) 2001-03-28 2002-03-28 Dispositif de traitement plasma par micro-ondes, procede d'allumage de plasma, procede de formation de plasma et procede de traitement plasma

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CNA2006100871845A Division CN1945800A (zh) 2001-03-28 2002-03-28 微波等离子体处理装置、等离子体点火方法、等离子体形成方法及等离子体处理方法

Publications (2)

Publication Number Publication Date
CN1502121A CN1502121A (zh) 2004-06-02
CN1311531C true CN1311531C (zh) 2007-04-18

Family

ID=18948501

Family Applications (2)

Application Number Title Priority Date Filing Date
CNA2006100871845A Pending CN1945800A (zh) 2001-03-28 2002-03-28 微波等离子体处理装置、等离子体点火方法、等离子体形成方法及等离子体处理方法
CNB028074890A Expired - Fee Related CN1311531C (zh) 2001-03-28 2002-03-28 微波等离子体处理装置

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CNA2006100871845A Pending CN1945800A (zh) 2001-03-28 2002-03-28 微波等离子体处理装置、等离子体点火方法、等离子体形成方法及等离子体处理方法

Country Status (7)

Country Link
US (1) US7141756B2 (ja)
EP (1) EP1376668B1 (ja)
JP (1) JP4799748B2 (ja)
KR (1) KR100573210B1 (ja)
CN (2) CN1945800A (ja)
DE (1) DE60221975T2 (ja)
WO (1) WO2002080254A1 (ja)

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JP4544447B2 (ja) * 2002-11-29 2010-09-15 パナソニック株式会社 プラズマドーピング方法
JP2005175028A (ja) * 2003-12-09 2005-06-30 Canon Inc プラズマ処理方法およびプラズマ処理装置
KR100550342B1 (ko) * 2004-02-24 2006-02-08 삼성전자주식회사 가스 산포 방법, 및 샤워 헤드, 및 샤워 헤드를 구비하는반도체 기판 가공 장치
KR100614648B1 (ko) * 2004-07-15 2006-08-23 삼성전자주식회사 반도체 소자 제조에 사용되는 기판 처리 장치
US7381291B2 (en) * 2004-07-29 2008-06-03 Asm Japan K.K. Dual-chamber plasma processing apparatus
WO2006033164A1 (ja) * 2004-09-24 2006-03-30 Tadahiro Ohmi 有機ｅｌ発光素子、その製造方法および表示装置
JP2006186245A (ja) * 2004-12-28 2006-07-13 Tokyo Electron Ltd トンネル酸化膜の窒化処理方法、不揮発性メモリ素子の製造方法および不揮発性メモリ素子、ならびにコンピュータプログラムおよび記録媒体
JP4620537B2 (ja) * 2005-07-21 2011-01-26 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理装置の制御方法
US7579287B2 (en) 2005-08-12 2009-08-25 Canon Kabushiki Kaisha Surface treatment method, manufacturing method of semiconductor device, and manufacturing method of capacitive element
JP4708998B2 (ja) 2005-12-22 2011-06-22 キヤノン株式会社 パターニング方法、電気光学装置の製造方法、カラーフィルターの製造方法、発光体の製造方法、並びに薄膜トランジスタの製造方法
KR100864111B1 (ko) * 2006-05-22 2008-10-16 최대규 유도 결합 플라즈마 반응기
JP5069427B2 (ja) * 2006-06-13 2012-11-07 北陸成型工業株式会社 シャワープレート、並びにそれを用いたプラズマ処理装置、プラズマ処理方法及び電子装置の製造方法
JP5651843B2 (ja) * 2007-09-10 2015-01-14 イマジニアリング株式会社 計測方法、及び計測装置
KR100963848B1 (ko) * 2007-12-14 2010-07-09 다이나믹솔라디자인 주식회사 멀티 레이저 스캐닝 라인을 갖는 용량 결합 플라즈마반응기
KR100979187B1 (ko) * 2007-12-14 2010-08-31 다이나믹솔라디자인 주식회사 멀티 레이저 스캐닝 라인을 갖는 이중 기판 처리를 위한이중 플라즈마 반응기
KR101434145B1 (ko) * 2007-12-27 2014-08-26 주식회사 뉴파워 프라즈마 멀티 레이저 스캐닝 라인을 갖는 유도 결합 플라즈마반응기
EP2284869B9 (en) * 2008-05-26 2015-10-21 Mitsubishi Electric Corporation Thin film formation device and semiconductor film manufacturing method
US20090309623A1 (en) * 2008-06-11 2009-12-17 Amethyst Research, Inc. Method for Assessment of Material Defects
KR101023645B1 (ko) * 2008-09-02 2011-03-22 에이피시스템 주식회사 광 유도 화학기상 증착장치
US20100096569A1 (en) * 2008-10-21 2010-04-22 Applied Materials, Inc. Ultraviolet-transmitting microwave reflector comprising a micromesh screen
KR101096458B1 (ko) * 2009-12-03 2011-12-20 비아이 이엠티 주식회사 공정가스 분리 공급형 대기압 플라즈마 장치
US9435031B2 (en) 2014-01-07 2016-09-06 International Business Machines Corporation Microwave plasma and ultraviolet assisted deposition apparatus and method for material deposition using the same
CN103982917B (zh) * 2014-05-04 2015-11-25 清华大学 利用电磁波等离子体实现的可控多点点火装置
CN104675597B (zh) * 2015-02-05 2016-05-25 吉林大学 反射销式车载微波重整器等离子点火装置
US10244613B2 (en) 2015-10-04 2019-03-26 Kla-Tencor Corporation System and method for electrodeless plasma ignition in laser-sustained plasma light source
CN109905955B (zh) * 2019-03-13 2023-12-22 中国科学院微电子研究所 原子态等离子体形成装置及其应用
CN113796163A (zh) * 2019-05-09 2021-12-14 Spp科技股份有限公司 等离子体点火方法和等离子体生成装置
US11348784B2 (en) * 2019-08-12 2022-05-31 Beijing E-Town Semiconductor Technology Co., Ltd Enhanced ignition in inductively coupled plasmas for workpiece processing
US11262664B2 (en) * 2019-11-19 2022-03-01 Kla Corporation System and method for protecting optics from vacuum ultraviolet light
US20230207274A1 (en) * 2020-06-02 2023-06-29 Lam Research Corporation Photoelectron assisted plasma ignition
DE102022000797A1 (de) 2021-03-10 2022-09-15 Mathias Herrmann Zündkonzept und Verbrennungskonzept für Triebwerke und Raketen; möglichst effektive, bzw. gerichtete Anregung und Zündung mittels angepasster elektromagnetischer Strahlung bzw. elektromagnetischer Wellen (z. B. Radiowellen, Mikrowellen, Magnetwellen) und katalytischer Absorber zur Erhöhung des energetischen Wirkungsgrades und Schubes

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN86105186A (zh) * 1985-08-23 1987-06-03 株式会社日立制作所 等离子体处理装置
JPS63158798A (ja) * 1986-12-19 1988-07-01 富士通株式会社 プラズマ処理装置
JPH02151021A (ja) * 1988-12-02 1990-06-11 Agency Of Ind Science & Technol プラズマ加工堆積装置
JPH06302525A (ja) * 1993-04-14 1994-10-28 Semiconductor Energy Lab Co Ltd 気相反応装置
JPH06342768A (ja) * 1993-06-02 1994-12-13 Anelva Corp Ｅｃｒ表面処理装置とその放電開始方法
US5468296A (en) * 1993-12-17 1995-11-21 Lsi Logic Corporation Apparatus for igniting low pressure inductively coupled plasma
JPH0822129A (ja) * 1994-07-06 1996-01-23 Nikon Corp 真空紫外域の光学装置
JPH09115694A (ja) * 1995-10-19 1997-05-02 Tokyo Electron Ltd プラズマ処理装置
JPH10102251A (ja) * 1996-09-06 1998-04-21 Toshio Goto 炭素原子による成膜及びエッチング処理方法及びその装置
JPH11111708A (ja) * 1997-09-30 1999-04-23 Tokyo Electron Ltd プラズマ成膜処理方法

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Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN86105186A (zh) * 1985-08-23 1987-06-03 株式会社日立制作所 等离子体处理装置
JPS63158798A (ja) * 1986-12-19 1988-07-01 富士通株式会社 プラズマ処理装置
JPH02151021A (ja) * 1988-12-02 1990-06-11 Agency Of Ind Science & Technol プラズマ加工堆積装置
JPH06302525A (ja) * 1993-04-14 1994-10-28 Semiconductor Energy Lab Co Ltd 気相反応装置
JPH06342768A (ja) * 1993-06-02 1994-12-13 Anelva Corp Ｅｃｒ表面処理装置とその放電開始方法
US5468296A (en) * 1993-12-17 1995-11-21 Lsi Logic Corporation Apparatus for igniting low pressure inductively coupled plasma
JPH0822129A (ja) * 1994-07-06 1996-01-23 Nikon Corp 真空紫外域の光学装置
JPH09115694A (ja) * 1995-10-19 1997-05-02 Tokyo Electron Ltd プラズマ処理装置
JPH10102251A (ja) * 1996-09-06 1998-04-21 Toshio Goto 炭素原子による成膜及びエッチング処理方法及びその装置
JPH11111708A (ja) * 1997-09-30 1999-04-23 Tokyo Electron Ltd プラズマ成膜処理方法

Also Published As

Publication number Publication date
JP4799748B2 (ja) 2011-10-26
US7141756B2 (en) 2006-11-28
US20040118834A1 (en) 2004-06-24
KR20030088117A (ko) 2003-11-17
DE60221975T2 (de) 2008-05-15
KR100573210B1 (ko) 2006-04-24
CN1945800A (zh) 2007-04-11
DE60221975D1 (de) 2007-10-04
WO2002080254A1 (fr) 2002-10-10
JP2002299241A (ja) 2002-10-11
EP1376668A4 (en) 2006-02-15
EP1376668A1 (en) 2004-01-02
CN1502121A (zh) 2004-06-02
EP1376668B1 (en) 2007-08-22

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