CN108917973A - A kind of ultrathin type temperature sensor - Google Patents
A kind of ultrathin type temperature sensor Download PDFInfo
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- CN108917973A CN108917973A CN201810887475.5A CN201810887475A CN108917973A CN 108917973 A CN108917973 A CN 108917973A CN 201810887475 A CN201810887475 A CN 201810887475A CN 108917973 A CN108917973 A CN 108917973A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
- G01K7/22—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a non-linear resistance, e.g. thermistor
- G01K7/223—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a non-linear resistance, e.g. thermistor characterised by the shape of the resistive element
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Abstract
This application involves a kind of ultrathin temperature sensors, including thermistor substrate, the first plain conductor, the second plain conductor and encapsulated layer, first plain conductor is welded on the first surface of thermistor substrate, second plain conductor is welded on the second surface of thermistor substrate, wherein the first plain conductor and the second plain conductor clamp thermistor substrate；The thermistor substrate and the first plain conductor, the second plain conductor are externally provided with one layer of encapsulated layer；The encapsulated layer is transparent glass glazings；The thermistor substrate is core-shell structure, NTC thermal sensitive ceramic material based on Ca-Cu-Sn-Ti-W-O, specifically, nuclear structure is CaWO4‑0.2CuWO4‑0.5SnTi2O6, shell structure TiO2。
Description
Technical field
This application involves temperature sensor technology field more particularly to a kind of ultrathin temperature sensors.
Background technique
Temperature is a basic physical quantity, very universal to the measurement of temperature in actual life and production.Temperature sensing
Device refers to that it can experience temperature and temperature change is converted into the sensor of usable output signal.Temperature sensor is nowhere not
, wherein thermo-sensitive material is the core in temperature sensor, extremely sensitive to temperature change, applies more temperature-sensitive at present
Material includes PTC thermo-sensitive material and NTC thermo-sensitive material.
NTC thermo-sensitive material is a kind of sensitive material of negative temperature coefficient, with quick response, at low cost, small in size, clever
The advantages that sensitivity is high, however, NTC thermistor material used at present is nearly all by Mn3O4、Co3O4, the transition metal such as NiO
The spinelle system ceramics material that oxide solid solution is formed is only suitable for 300 DEG C of temperature measurements below, for high temperature measurement
It is not applicable, also, using temperature sensor made of this kind of material, thickness is larger, limits its concrete application.
Summary of the invention
The present invention is intended to provide a kind of ultrathin type temperature sensor, set forth above to solve the problems, such as.
A kind of ultrathin temperature sensor, including thermistor substrate, the first metal are provided in the embodiment of the present invention
Conducting wire, the second plain conductor and encapsulated layer, first plain conductor are welded on the first surface of thermistor substrate, and second
Plain conductor is welded on the second surface of thermistor substrate, wherein the first plain conductor and the second plain conductor clamp heat
Quick resistance substrate；The thermistor substrate and the first plain conductor, the second plain conductor are externally provided with one layer of encapsulated layer；The envelope
Dress layer is transparent glass glazings；The thermistor substrate is core-shell structure, NTC based on Ca-Cu-Sn-Ti-W-O heat
Sensitive ceramic material, specifically, nuclear structure is CaWO4-0.2CuWO4-0.5SnTi2O6, shell structure TiO2。
The technical solution that the embodiment of the present invention provides can include the following benefits：
The Ca-Cu-Sn-Ti-W-O system NTC thermal sensitive ceramics material using core-shell structure of the technical solution creativeness of the application
Material, shell structure is specially TiO2, electrical conductivity and resistivity-temperature characteristics with higher can play in conjunction with internal nuclear structure
Effect, improves the resistivity-temperature characteristics of thermistor substrate at high temperature, has obtained unexpected technical effect.
The additional aspect of the application and advantage will be set forth in part in the description, and will partially become from the following description
It obtains obviously, or recognized by the practice of the application.It should be understood that above general description and following detailed description are only
Be it is exemplary and explanatory, the application can not be limited.
Detailed description of the invention
The present invention will be further described with reference to the accompanying drawings, but the embodiment in attached drawing is not constituted to any limit of the invention
System, for those of ordinary skill in the art, without creative efforts, can also obtain according to the following drawings
Other attached drawings.
Fig. 1 is the structural schematic diagram of temperature sensor described in embodiment of the present invention；
Fig. 2 is the structure sectional view of temperature sensor of the present invention.
Specific embodiment
Example embodiments are described in detail here, and the example is illustrated in the accompanying drawings.Following description is related to
When attached drawing, unless otherwise indicated, the same numbers in different drawings indicate the same or similar elements.Following exemplary embodiment
Described in embodiment do not represent all embodiments consistented with the present invention.On the contrary, they be only with it is such as appended
The example of device and method being described in detail in claims, some aspects of the invention are consistent.
Embodiments herein is related to a kind of ultrathin temperature sensor, and in conjunction with Fig. 1, Fig. 2, which includes square
The thermistor substrate 10 of shape is respectively welded the first plain conductor 20 and the second gold medal on the opposite two sides of thermistor substrate 10
Belong to conducting wire 30, that is, the first plain conductor 20 is welded on the first surface 101 of thermistor substrate 10, the second plain conductor 30
It is welded on the second surface 102 of thermistor substrate 10, so that the first plain conductor 20 and the second plain conductor 30 folder
Thermistor substrate 10 is handled, thermistor substrate 10 and the first plain conductor 20, the second plain conductor 30 are externally provided with one layer of glass
Glass glaze encapsulated layer 40, wherein the package length of glass glaze encapsulated layer 40 need to be determined according to temperature sensor needs.
Specifically, above-mentioned welding manner has ultrasonic welding, gold ball bonding, silver paste slugging etc.；
Specifically, the glass glaze encapsulated layer 40 is resistance material, main component is magnesia, is commonly called as：Magnesia, lamp powder,
Magnesia usta, its main feature is that high brightness, high antibacterial, high self-cleaning, high waterproof.First plain conductor 20 and the second plain conductor 30 are selected
There is the Dumet wire conducting wire of good sealed knot with glass glaze encapsulated layer 40.
In technical scheme, epoxy resin is substituted with glass glaze, traditional copper wire is substituted with Dumet silk thread, in high temperature
Lower carry out sealed knot.Due to Dumet wire and glass-glazed leakproofness, the temperature sensor made using the present invention is through boiling water boiling 1000
After hour, electrical property is unchanged.It has great practical value, can be widely used for fire-fighting heat detector, water heater temperature sensor
Industry.
In a preferred embodiment, which can be 2000~5000 μm；First metal is led
Line 20 and the second plain conductor 30 are Dumet wire conducting wire, and the diameter of the first plain conductor 20 and the second plain conductor 30 can be 100
~500 μm.
In a kind of preferred embodiment, the thermistor substrate be a kind of core-shell structure, be based on Ca-Cu-Sn-Ti-W-O
NTC thermal sensitive ceramic material, specifically, nuclear structure be CaWO4-0.2CuWO4-0.5SnTi2O6, shell structure TiO2。
At present in technical solution, the NTC thermistor material used is nearly all by Mn3O4、Co3O4, the transition gold such as NiO
Belong to the spinelle system ceramics material that oxide solid solution is formed, 300 DEG C of temperature measurements below is only suitable for, for high temperature side
Amount is not applicable；The Ca-Cu-Sn-Ti-W-O system NTC thermal sensitive ceramics material using core-shell structure of the technical solution creativeness of the application
Material, shell structure is specially TiO2, electrical conductivity and resistivity-temperature characteristics with higher can play in conjunction with internal nuclear structure
Effect, improves the resistivity-temperature characteristics of thermistor substrate at high temperature, has obtained unexpected technical effect.
In addition, the thickness of thermistor substrate is effectively reduced by using core-shell structure thermal sensitive ceramic material, so that warm
Spending sensor has ultra-thin effect, expands application range.
Specific to nuclear structure, the CaWO4-0.2CuWO4-SnTi2O6It is by CaCO3、CuCO3、SnO2、TiO2、WO3Powder warp
Ball milling mixing pre-burning, is again formed after ball milling, preferred 5-25 μm of partial size.
In technical scheme, the nuclear structure it is creative based on Ca-Cu-Sn-Ti-W-O series ceramic material, by mixing
It is miscellaneous, the NTC effect of material is improved, unexpected technical results have been achieved.
Specific to shell structure, the TiO2It is prepared using hydro-thermal method.
TiO2It is a kind of important semiconductor material, chemical property is more stable, TiO2Photocatalysis performance is normally behaved as,
For photocatalytic self-cleaning material, or for being used as filler, colorant, in the application in the products such as papermaking, rubber
By itself and CaWO4-0.2CuWO4-SnTi2O6In conjunction with due to TiO2Dielectric constant it is larger, hence it is evident that improve the NTC effect of material,
Unexpected technical results have been achieved.
In a preferred embodiment, the thermistor substrate with a thickness of 100~300 μm, length can for 400~
500 μm, width can be 300~400 μm.
Due to using above-mentioned thermal sensitive ceramic material, which compares conventional substrate and greatly reduces, play
Ultra-thin technical effect.
It the following is the preparation step of herein described thermistor substrate：
Step 1, powder preparation
Firstly, weighing CaCO according to stoichiometric ratio3、CuCO3、SnO2、TiO2、WO3Powder is that powder is mixed with wet ball-milling
Powder refining is closed uniformly and makes, the mass ratio for controlling powder and zirconium ball is 1:3, the mass ratio with deionized water is 1:2, when ball milling
Between be 10h, revolving speed is 350 revs/min, slurry obtained by ball milling is put into drying box, the powder in 90 DEG C of drying 10h, after drying
Body is in 1158 DEG C of pre-burning 3h；Then second of ball milling and drying are carried out again, and method is identical as first time；After second of ball milling, sieve
Partial size is selected, powder A is obtained；
Step 2, shell structure preparation
Deionized water, emulsifier dodecyl benzene sulfonic acid ammonium, polyoxyethylene octylphenol ether are added equipped with mechanical stirring, returned
In the reaction vessel for flowing condenser pipe, nitrogen protection and thermometer, heating water bath stirs to dissolve to obtain spare cream to 70 DEG C
Change system；
The powder A of Silane coupling reagent KH-570 and upper step is added in styrene, emulsified body is added after ultrasonic 20min
System adds initiator ammonium persulfate and buffer NaHCO after emulsifying half an hour3, it is warming up to 87 DEG C and keeps the temperature 5h, then rises to 92
DEG C heat preservation 1h after stop reaction, demulsification, washed repeatedly with hot water, be dried to obtain PS/ powder A；
Deionized water is added in flask, appropriate neopelex and polyvinylpyrrolidone is then added, uses
It is 2.7 that hydrochloric acid, which adjusts its pH value, and then the mixed solution of butyl titanate and dehydrated alcohol is added while stirring, is then added
The ethanol solution of five water cobalt nitrates and cerous nitrate continues to stir 1h, above-mentioned PS/ powder A is then added, is adjusted with ammonium hydroxide
PH value stands for 24 hours at 60 DEG C, is washed with distilled water and dehydrated alcohol, obtains TiO after dry2/ PS/ powder A removes PS,
600 DEG C of calcining 5h obtain TiO2/ powder A；
It is step 3, dry-pressing formed
By the above-mentioned TiO prepared2The PVA that 7wt.% is incorporated as in/powder A makees binder, pushes in 180Mpa pressure
Rectangle is made；
Step 4, sintering
Sintering process is：540 DEG C are warming up to the rate of 2 DEG C/min, in 540 DEG C of heat preservation 1h, with the rate liter of 3 DEG C/min
Temperature, in 630 DEG C of heat preservation 3h, is warming up to 1340 DEG C to 630 DEG C with the rate of 5 DEG C/min, in 1340 DEG C of heat preservation 4h, is subsequently cooled to
Room temperature obtains the thermistor substrate.
Wherein, primary raw material such as the following table 1 that the above process is used
The primary raw material that table 1 uses
| Raw material | Purity grade | Manufacturer |
| CaCO3 | Analyze pure (99.0%) | Shanghai traditional Chinese medicines reagent |
| CuCO3 | Analyze pure (99.0%) | Shanghai traditional Chinese medicines reagent |
| SnO2 | Analyze pure (99.0%) | Shanghai traditional Chinese medicines reagent |
| TiO2 | Analyze pure (99.5%) | Shanghai traditional Chinese medicines reagent |
| WO3 | Analyze pure (99.0%) | Shanghai traditional Chinese medicines reagent |
Further explanation is made to the present invention below with reference to embodiment.
Embodiment 1
A kind of thermistor substrate, the thermistor substrate with a thickness of 100~300 μm, length can be 400~500 μm,
Width can be 300~400 μm.
The thermistor substrate is a kind of core-shell structure, NTC thermal sensitive ceramic material based on Ca-Cu-Sn-Ti-W-O,
Specifically, nuclear structure is CaWO4-0.2CuWO4-0.5SnTi2O6, shell structure TiO2。
The CaWO4-0.2CuWO4-SnTi2O6It is by CaCO3、CuCO3、SnO2、TiO2、WO3Powder is through ball milling mixing, pre-
It burns, formed after ball milling again, partial size is 5 μm.
The TiO2It is prepared using hydro-thermal method.
It the following is the preparation step of herein described thermistor substrate：
Step 1, powder preparation
Firstly, weighing CaCO according to stoichiometric ratio3、CuCO3、SnO2、TiO2、WO3Powder is that powder is mixed with wet ball-milling
Powder refining is closed uniformly and makes, the mass ratio for controlling powder and zirconium ball is 1:3, the mass ratio with deionized water is 1:2, when ball milling
Between be 10h, revolving speed is 350 revs/min, slurry obtained by ball milling is put into drying box, the powder in 90 DEG C of drying 10h, after drying
Body is in 1158 DEG C of pre-burning 3h；Then second of ball milling and drying are carried out again, and method is identical as first time；After second of ball milling, sieve
Partial size is selected, powder A is obtained；
Step 2, shell structure preparation
Deionized water, emulsifier dodecyl benzene sulfonic acid ammonium, polyoxyethylene octylphenol ether are added equipped with mechanical stirring, returned
In the reaction vessel for flowing condenser pipe, nitrogen protection and thermometer, heating water bath stirs to dissolve to obtain spare cream to 70 DEG C
Change system；
The powder A of Silane coupling reagent KH-570 and upper step is added in styrene, emulsified body is added after ultrasonic 20min
System adds initiator ammonium persulfate and buffer NaHCO after emulsifying half an hour3, it is warming up to 87 DEG C and keeps the temperature 5h, then rises to 92
DEG C heat preservation 1h after stop reaction, demulsification, washed repeatedly with hot water, be dried to obtain PS/ powder A；
Deionized water is added in flask, appropriate neopelex and polyvinylpyrrolidone is then added, uses
It is 2.7 that hydrochloric acid, which adjusts its pH value, and then the mixed solution of butyl titanate and dehydrated alcohol is added while stirring, is then added
The ethanol solution of five water cobalt nitrates and cerous nitrate continues to stir 1h, above-mentioned PS/ powder A is then added, is adjusted with ammonium hydroxide
PH value stands for 24 hours at 60 DEG C, is washed with distilled water and dehydrated alcohol, obtains TiO after dry2/ PS/ powder A removes PS,
600 DEG C of calcining 5h obtain TiO2/ powder A；
It is step 3, dry-pressing formed
By the above-mentioned TiO prepared2The PVA that 7wt.% is incorporated as in/powder A makees binder, pushes in 180Mpa pressure
Rectangle is made；
Step 4, sintering
Sintering process is：540 DEG C are warming up to the rate of 2 DEG C/min, in 540 DEG C of heat preservation 1h, with the rate liter of 3 DEG C/min
Temperature, in 630 DEG C of heat preservation 3h, is warming up to 1340 DEG C to 630 DEG C with the rate of 5 DEG C/min, in 1340 DEG C of heat preservation 4h, is subsequently cooled to
Room temperature obtains the thermistor substrate.
After measured, the thermistor substrate that the application obtains is 2.84 × 10 in 25 DEG C of resistivity7Ω m, 800 DEG C
Resistivity is 174 Ω m；There is preferable NTC performance at high temperature；
High-temperature stability：Test the variation for the resistivity that thermistor substrate is kept the temperature at 500 DEG C before and after aging 200h, hair
Existing change rate is 3.5%, and high-temperature stability is preferable.
Embodiment 2
A kind of thermistor substrate, the thermistor substrate with a thickness of 100~300 μm, length can be 400~500 μm,
Width can be 300~400 μm.
The thermistor substrate is a kind of core-shell structure, NTC thermal sensitive ceramic material based on Ca-Cu-Sn-Ti-W-O,
Specifically, nuclear structure is CaWO4-0.2CuWO4-0.5SnTi2O6, shell structure TiO2。
The CaWO4-0.2CuWO4-SnTi2O6It is by CaCO3、CuCO3、SnO2、TiO2、WO3Powder is through ball milling mixing, pre-
It burns, formed after ball milling again, partial size is 15 μm.
The TiO2It is prepared using hydro-thermal method.
It the following is the preparation step of herein described thermistor substrate：
Step 1, powder preparation
Firstly, weighing CaCO according to stoichiometric ratio3、CuCO3、SnO2、TiO2、WO3Powder is that powder is mixed with wet ball-milling
Powder refining is closed uniformly and makes, the mass ratio for controlling powder and zirconium ball is 1:3, the mass ratio with deionized water is 1:2, when ball milling
Between be 10h, revolving speed is 350 revs/min, slurry obtained by ball milling is put into drying box, the powder in 90 DEG C of drying 10h, after drying
Body is in 1158 DEG C of pre-burning 3h；Then second of ball milling and drying are carried out again, and method is identical as first time；After second of ball milling, sieve
Partial size is selected, powder A is obtained；
Step 2, shell structure preparation
Deionized water, emulsifier dodecyl benzene sulfonic acid ammonium, polyoxyethylene octylphenol ether are added equipped with mechanical stirring, returned
In the reaction vessel for flowing condenser pipe, nitrogen protection and thermometer, heating water bath stirs to dissolve to obtain spare cream to 70 DEG C
Change system；
The powder A of Silane coupling reagent KH-570 and upper step is added in styrene, emulsified body is added after ultrasonic 20min
System adds initiator ammonium persulfate and buffer NaHCO after emulsifying half an hour3, it is warming up to 87 DEG C and keeps the temperature 5h, then rises to 92
DEG C heat preservation 1h after stop reaction, demulsification, washed repeatedly with hot water, be dried to obtain PS/ powder A；
Deionized water is added in flask, appropriate neopelex and polyvinylpyrrolidone is then added, uses
It is 2.7 that hydrochloric acid, which adjusts its pH value, and then the mixed solution of butyl titanate and dehydrated alcohol is added while stirring, is then added
The ethanol solution of five water cobalt nitrates and cerous nitrate continues to stir 1h, above-mentioned PS/ powder A is then added, is adjusted with ammonium hydroxide
PH value stands for 24 hours at 60 DEG C, is washed with distilled water and dehydrated alcohol, obtains TiO after dry2/ PS/ powder A removes PS,
600 DEG C of calcining 5h obtain TiO2/ powder A；
It is step 3, dry-pressing formed
By the above-mentioned TiO prepared2The PVA that 7wt.% is incorporated as in/powder A makees binder, pushes in 180Mpa pressure
Rectangle is made；
Step 4, sintering
Sintering process is：540 DEG C are warming up to the rate of 2 DEG C/min, in 540 DEG C of heat preservation 1h, with the rate liter of 3 DEG C/min
Temperature, in 630 DEG C of heat preservation 3h, is warming up to 1340 DEG C to 630 DEG C with the rate of 5 DEG C/min, in 1340 DEG C of heat preservation 4h, is subsequently cooled to
Room temperature obtains the thermistor substrate.
After measured, the thermistor substrate that the application obtains is 2.84 × 10 in 25 DEG C of resistivity7Ω m, 800 DEG C
Resistivity is 174 Ω m；There is preferable NTC performance at high temperature；
High-temperature stability：Test the variation for the resistivity that thermistor substrate is kept the temperature at 500 DEG C before and after aging 200h, hair
Existing change rate is 3.8%, and high-temperature stability is preferable.
Embodiment 3
A kind of thermistor substrate, the thermistor substrate with a thickness of 100~300 μm, length can be 400~500 μm,
Width can be 300~400 μm.
The thermistor substrate is a kind of core-shell structure, NTC thermal sensitive ceramic material based on Ca-Cu-Sn-Ti-W-O,
Specifically, nuclear structure is CaWO4-0.2CuWO4-0.5SnTi2O6, shell structure TiO2。
The CaWO4-0.2CuWO4-SnTi2O6It is by CaCO3、CuCO3、SnO2、TiO2、WO3Powder is through ball milling mixing, pre-
It burns, formed after ball milling again, partial size is 25 μm.
The TiO2It is prepared using hydro-thermal method.
It the following is the preparation step of herein described thermistor substrate：
Step 1, powder preparation
Firstly, weighing CaCO according to stoichiometric ratio3、CuCO3、SnO2、TiO2、WO3Powder is that powder is mixed with wet ball-milling
Powder refining is closed uniformly and makes, the mass ratio for controlling powder and zirconium ball is 1:3, the mass ratio with deionized water is 1:2, when ball milling
Between be 10h, revolving speed is 350 revs/min, slurry obtained by ball milling is put into drying box, the powder in 90 DEG C of drying 10h, after drying
Body is in 1158 DEG C of pre-burning 3h；Then second of ball milling and drying are carried out again, and method is identical as first time；After second of ball milling, sieve
Partial size is selected, powder A is obtained；
Step 2, shell structure preparation
Deionized water, emulsifier dodecyl benzene sulfonic acid ammonium, polyoxyethylene octylphenol ether are added equipped with mechanical stirring, returned
In the reaction vessel for flowing condenser pipe, nitrogen protection and thermometer, heating water bath stirs to dissolve to obtain spare cream to 70 DEG C
Change system；
The powder A of Silane coupling reagent KH-570 and upper step is added in styrene, emulsified body is added after ultrasonic 20min
System adds initiator ammonium persulfate and buffer NaHCO after emulsifying half an hour3, it is warming up to 87 DEG C and keeps the temperature 5h, then rises to 92
DEG C heat preservation 1h after stop reaction, demulsification, washed repeatedly with hot water, be dried to obtain PS/ powder A；
Deionized water is added in flask, appropriate neopelex and polyvinylpyrrolidone is then added, uses
It is 2.7 that hydrochloric acid, which adjusts its pH value, and then the mixed solution of butyl titanate and dehydrated alcohol is added while stirring, is then added
The ethanol solution of five water cobalt nitrates and cerous nitrate continues to stir 1h, above-mentioned PS/ powder A is then added, is adjusted with ammonium hydroxide
PH value stands for 24 hours at 60 DEG C, is washed with distilled water and dehydrated alcohol, obtains TiO after dry2/ PS/ powder A removes PS,
600 DEG C of calcining 5h obtain TiO2/ powder A；
It is step 3, dry-pressing formed
By the above-mentioned TiO prepared2The PVA that 7wt.% is incorporated as in/powder A makees binder, pushes in 180Mpa pressure
Rectangle is made；
Step 4, sintering
Sintering process is：540 DEG C are warming up to the rate of 2 DEG C/min, in 540 DEG C of heat preservation 1h, with the rate liter of 3 DEG C/min
Temperature, in 630 DEG C of heat preservation 3h, is warming up to 1340 DEG C to 630 DEG C with the rate of 5 DEG C/min, in 1340 DEG C of heat preservation 4h, is subsequently cooled to
Room temperature obtains the thermistor substrate.
After measured, the thermistor substrate that the application obtains is 2.84 × 10 in 25 DEG C of resistivity7Ω m, 800 DEG C
Resistivity is 174 Ω m；There is preferable NTC performance at high temperature；
High-temperature stability：Test the variation for the resistivity that thermistor substrate is kept the temperature at 500 DEG C before and after aging 200h, hair
Existing change rate is 4.2%, and high-temperature stability is preferable.
The foregoing is merely preferred modes of the invention, are not intended to limit the invention, all in spirit and original of the invention
Within then, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (9)
1. a kind of ultrathin type temperature sensor, including thermistor substrate, the first plain conductor, the second plain conductor and encapsulation
Layer, which is characterized in that first plain conductor is welded on the first surface of thermistor substrate, the welding of the second plain conductor
On the second surface of thermistor substrate, wherein the first plain conductor and the second plain conductor clamp thermistor substrate；
The thermistor substrate and the first plain conductor, the second plain conductor are externally provided with one layer of encapsulated layer；The encapsulated layer is transparent
Glass glazings；The thermistor substrate is core-shell structure, NTC thermal sensitive ceramic material based on Ca-Cu-Sn-Ti-W-O,
Specifically, nuclear structure is CaWO4-0.2CuWO4-0.5SnTi2O6, shell structure TiO2。
2. a kind of ultrathin temperature sensor according to claim 1, which is characterized in that the nuclear structure CaWO4-
0.2CuWO4-SnTi2O6It is by CaCO3、CuCO3、SnO2、TiO2、WO3Powder through ball milling mixing, pre-burning, again formed after ball milling.
3. a kind of ultrathin temperature sensor according to claim 1, which is characterized in that the nuclear structure CaWO4-
0.2CuWO4-SnTi2O6Partial size is 5-25 μm.
4. a kind of ultrathin temperature sensor according to claim 1, which is characterized in that the shell structure TiO2Using water
Thermal method preparation.
5. a kind of ultrathin temperature sensor according to claim 1, which is characterized in that the encapsulated layer is with a thickness of 2000
~5000 μm.
6. a kind of ultrathin temperature sensor according to claim 1, which is characterized in that first plain conductor and the
Two plain conductors are Dumet wire conducting wire.
7. a kind of ultrathin temperature sensor according to claim 6, which is characterized in that first plain conductor and the
The diameter of two plain conductors is 100~500 μm.
8. a kind of ultrathin temperature sensor according to claim 1, which is characterized in that the thickness of the thermistor substrate
Degree is 100~300 μm, and length is 400~500 μm, and width is 300~400 μm.
9. a kind of ultrathin temperature sensor according to claim 1, which is characterized in that the system of the thermistor substrate
Standby step：
Step 1, powder preparation
Firstly, weighing CaCO according to stoichiometric ratio3、CuCO3、SnO2、TiO2、WO3Powder is that powder mixing is equal with wet ball-milling
Even and make powder refining, the mass ratio of control powder and zirconium ball is 1:3, the mass ratio with deionized water is 1:2, Ball-milling Time is
10h, revolving speed are 350 revs/min, slurry obtained by ball milling are put into drying box, in 90 DEG C of drying 10h, the powder after drying exists
1158 DEG C of pre-burning 3h；Then second of ball milling and drying are carried out again, and method is identical as first time；After second of ball milling, grain is screened
Diameter obtains powder A；
Step 2, shell structure preparation
Deionized water, emulsifier dodecyl benzene sulfonic acid ammonium, polyoxyethylene octylphenol ether are added, mechanical stirring, returned cold are housed
In the reaction vessel of solidifying pipe, nitrogen protection and thermometer, heating water bath stirs to dissolve to obtain spare emulsified body to 70 DEG C
System；
The powder A of Silane coupling reagent KH-570 and upper step is added in styrene, emulsification system is added after ultrasonic 20min, cream
Initiator ammonium persulfate and buffer NaHCO are added after changing half an hour3, it is warming up to 87 DEG C and keeps the temperature 5h, then rises to 92 DEG C of guarantors
Stop reaction after warm 1h, demulsification is washed repeatedly with hot water, is dried to obtain PS/ powder A；
Deionized water is added in flask, appropriate neopelex and polyvinylpyrrolidone is then added, uses hydrochloric acid
Adjusting its pH value is 2.7, and then the mixed solution of butyl titanate and dehydrated alcohol is added while stirring, five water are then added
The ethanol solution of cobalt nitrate and cerous nitrate, continues to stir 1h, above-mentioned PS/ powder A is then added, and adjusts pH with ammonium hydroxide
Value, stands for 24 hours at 60 DEG C, is washed with distilled water and dehydrated alcohol, obtains TiO after dry2/ PS/ powder A removes PS,
600 DEG C of calcining 5h obtain TiO2/ powder A；
It is step 3, dry-pressing formed
By the above-mentioned TiO prepared2The PVA that 7wt.% is incorporated as in/powder A makees binder, is pressed into square under 180Mpa pressure
Shape；
Step 4, sintering
Sintering process is：540 DEG C are warming up to the rate of 2 DEG C/min, in 540 DEG C of heat preservation 1h, is warming up to the rate of 3 DEG C/min
630 DEG C, in 630 DEG C of heat preservation 3h, 1340 DEG C are warming up to the rate of 5 DEG C/min, in 1340 DEG C of heat preservation 4h, is subsequently cooled to room
Temperature obtains the thermistor substrate.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1305196A (en) * | 2000-11-15 | 2001-07-25 | 中国科学院新疆物理研究所 | Wafer-type thermosensitive oxide resistor |
| CN102219479A (en) * | 2011-04-21 | 2011-10-19 | 西安交通大学 | Negative temperature coefficient (NTC) material utilized at high temperature and preparation method thereof |
| CN102382322A (en) * | 2011-08-10 | 2012-03-21 | 陕西师范大学 | Polystyrene/barium titanate composite microsphere |
| CN102548930A (en) * | 2009-10-14 | 2012-07-04 | 埃普科斯股份有限公司 | Ceramic material, method for producing the ceramic material, and resistor component comprising the ceramic material |
| CN103011811A (en) * | 2012-12-07 | 2013-04-03 | 华中科技大学 | Method for preparing high temperature NTC (Negative Temperature Coefficient) thermistor material |
| CN206420579U (en) * | 2016-05-27 | 2017-08-18 | 深圳市特普生传感有限公司 | Temperature sensor NTC thermistor |
-
2018
- 2018-08-06 CN CN201810887475.5A patent/CN108917973A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1305196A (en) * | 2000-11-15 | 2001-07-25 | 中国科学院新疆物理研究所 | Wafer-type thermosensitive oxide resistor |
| CN102548930A (en) * | 2009-10-14 | 2012-07-04 | 埃普科斯股份有限公司 | Ceramic material, method for producing the ceramic material, and resistor component comprising the ceramic material |
| CN102219479A (en) * | 2011-04-21 | 2011-10-19 | 西安交通大学 | Negative temperature coefficient (NTC) material utilized at high temperature and preparation method thereof |
| CN102382322A (en) * | 2011-08-10 | 2012-03-21 | 陕西师范大学 | Polystyrene/barium titanate composite microsphere |
| CN103011811A (en) * | 2012-12-07 | 2013-04-03 | 华中科技大学 | Method for preparing high temperature NTC (Negative Temperature Coefficient) thermistor material |
| CN206420579U (en) * | 2016-05-27 | 2017-08-18 | 深圳市特普生传感有限公司 | Temperature sensor NTC thermistor |
Non-Patent Citations (3)
| Title |
|---|
| 欧阳兆辉: "镍铁氧体与二氧化钛复合介孔材料的研究", 《中国博士学位论文全文数据库 工程科技Ⅰ辑》 * |
| 纪婉雪: "Al2O3掺杂Ca-Ce-Ti-W-O系高温NTC热敏材料研究", 《中国优秀硕士学位论文全文数据库 工程科技Ⅰ辑》 * |
| 鄢靖源等: "具有核壳结构材料的薄膜热敏电阻", 《半导体技术》 * |
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