CN1297997C - Film capacitor and its production method - Google Patents
Film capacitor and its production method Download PDFInfo
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- CN1297997C CN1297997C CNB001189484A CN00118948A CN1297997C CN 1297997 C CN1297997 C CN 1297997C CN B001189484 A CNB001189484 A CN B001189484A CN 00118948 A CN00118948 A CN 00118948A CN 1297997 C CN1297997 C CN 1297997C
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Abstract
The present invention provides a thin-film capacitor, particularly a thin-film capacitor chip and the manufacture method thereof. Under a vacuum condition, dielectric gas, shielding electrode gas and depositing electrode gas are respectively deposited on the surface [11] of a moving carrier, and the gases are repeatedly deposited on the surface according to the sequence so as to form the motherboard of the thin-film capacitor formed by the superposition of a dielectric layer [9] and an electrode layer [8]; after that the motherboard is cut into block-shaped chips, and then both end surfaces of each chip are plated and sprayed with metal leading surfaces [13] so as to manufacture the thin-film capacitor. The thin-film capacitor manufactured by using the method and the device has the advantages of prominently reduced size, reduced manufacturing cost and enhanced electrical property.
Description
Technical field
The present invention relates to a kind of film capacitor and making thereof (manufacturing) method, particularly relate to a kind of inorganic dielectric material and complex media material film capacitor chip and making (manufacturing) method thereof.
Background technology
Film capacitor generally refers to metallized organic film capacitor more, is the widely used a kind of discrete electronic components of industry such as electrical equipment, electronic information, microelectronics.The advanced traditional fabrication method of this capacitor is: membrane (making organic thin film dielectrics) → spray (steaming) metal electrode on film → cut → winding core → flattening → thermal finalization (for the chip finished product) → chip end face is sprayed metal lead surface → weldering metal leg → detection and is sealed → the capacitor finished product.Wherein, how producing the low capacitor body of cost of fine quality is the key of capacitor fabrication process.This process is comparatively complicated, loaded down with trivial details, and employed film balance, rapid steamer cost an arm and a leg, and membrane precision and evaporation, the precision of cutting, reel are all had relatively high expectations, so manufacturing cost is higher.Because the employed deielectric-coating of takeup type technological requirement is necessary for pliability polymeric membrane preferably, and can not use the bigger inorganic dielectric material of fragility, thickness generally can not be lower than 1 micron (film that is lower than 1 micron also is difficult to reel), and cut, winding process is to carry out in air, and fuse is polluted.Particularly because the polymeric membrane thickness of this coiling is thicker, dielectric constant is less, and depend primarily on the size of deielectric-coating thickness and deielectric-coating dielectric constant with the volume size of the film capacitor of capacity, therefore the capacitor volume that uses this technology to make is bigger, is difficult to realize the miniaturization of film capacitor.Along with electric equipment products progressively to miniaturization development, more and more higher to capacitor electrode performance and volume requirement, it is good how to make (manufacturing) a kind of performance, particularly volume is little, the film capacitor of low cost of manufacture is an important research project.The capacitor of the inorganic dielectric material that present volume ratio is less, as the traditional fabrication method of the ceramic discrete monolithic capacitors that use at present in a large number method as high temperature sintering, the inorganic dielectric film that this method is made is thicker, and diaphragm is easy to crack during sintering, therefore limited the size of capacitor, make its capacity lower (being difficult to reach more than 10 microfarads), the parameter scattered error is bigger, and product quality is relatively poor.Be difficult to realize the big capacity miniaturization of capacitor.
Summary of the invention
The invention provides a kind of film capacitor and making thereof (manufacturing) method, a kind of film capacitor chip and making (manufacturing) method thereof particularly are provided.Make film capacitor in this way, volume reduces greatly, and capacitance improves greatly, and cost significantly reduces, and the electrical property of capacitor is improved.
Film capacitor manufacture method provided by the present invention is: make the dielectric layer 9 of capacitor and the motherboard (shown in accompanying drawing 1) of electrode layer 8 mutual superposition earlier, again with motherboard on request size cut into block chip (shown in accompanying drawing 2), again the both ends of the surface of chip mill is cut and is formed metal lead surface 12 or the both ends of the surface plating metal spraying of chip belonged to just made film capacitor (shown in accompanying drawing 3) after forming metal lead surface 13.Wherein the motherboard manufacture method is: under vacuum state, adopt medium vapour deposition process deposition (spraying) dielectric gas to form dielectric layer 9 to a moving carrier surface 11, shield on dielectric layer 9 surfaces of deposition then, adopt metal vapor deposition deposition (spraying) electrode gas to form electrode layer 8 on dielectric layer 9 surfaces of conductively-closed again, adopt medium vapour deposition process deposition medium gas to form dielectric layer 9 to electrode layer 8 surfaces again, carry out the medium vapour deposition according to this reiteration, shielding, vapor deposited metal (shown in accompanying drawing 4).So just form the superimposed complex of dielectric layer 9 and electrode layer 8, just made motherboard after meeting the requirements of the number of plies.
Above-mentioned said vacuum state is meant vacuum to 2 * 10
-1The scope of the following negative pressure state of Pa.
Above-mentioned said moving carrier surface 11 can be can be back and forth or the plane of shuttling movement; It also can be the face of cylinder that to make circular motion.
Above-mentioned said employing medium vapour deposition process is meant and adopts physical vaporous deposition or adopt chemical vapour deposition technique or the method for employing physical vaporous deposition and chemical vapour deposition technique combination.Physical vaporous deposition such as vacuum vapour deposition, sputtering method, ion beam depositing method, ion plating etc.The method of physical vaporous deposition and chemical vapour deposition technique combination such as plasma vapor deposition processes etc.Material by the resulting dielectric layer 9 of vapour deposition process can be the composite material of inorganic insulator material or organic insulator material or inorganic insulator and organic insulator.The inorganic compound insulating material can be metallic compound or the mixture or the compound of nonmetallic compound or two or more compound.Inorganic compound insulating material such as silicon monoxide, silicon dioxide, titanium dioxide, alundum (Al, tantalum pentoxide, barium titanate, lead titanates etc., organic insulator material such as polytetrafluoroethylene, polystyrene, MPM methyl polymethacrylate etc.As being after making the solid titania gasification with the electron beam heating under the vacuum state, to be deposited on carrier surface 11 to form dielectric layers 9 or Titanium heating and gasifying or sputter are formed metal ion as the method for dielectric layer 9 with titanium dioxide, with oxygen ionization and with after the titanium of gasification (or ionization) mixes, be combined to titanium dioxide and be deposited on carrier surface 11 formation dielectric layers 9 again at carrier surface 11.Dielectric layer 9 can be the film that a kind of material forms; It also can be the compound medium layer 9 that multiple material forms.Compound medium layer 9 comprises by the compound dielectric layer 9 of multiple inorganic insulator material and constitutes or constituted or be made of the compound dielectric layer 9 of inorganic insulator material and organic insulator material by the compound dielectric layer 9 of multiple organic insulator material.
Above-mentioned said metal vapor deposition can adopt evaporation; Also can adopt magnetron sputtering method; Also can adopt the method for magnetron sputtering method and evaporation combination; Also can adopt the method for aura method and evaporation combination; Also can adopt the method for aura method and magnetron sputtering method combination; Also can adopt the method for aura method and magnetron sputtering method and evaporation combination.By resulting electrode layer 8 materials of metal vapor deposition can be zinc, aluminium, copper, titanium, nickel, chromium and alloy material.
Above-mentioned said the shielding on dielectric layer 9 surfaces is meant that employing spraying shielding oily method or employing shield the combination of blocking method or adopting these two kinds of methods.
Adopting the method for spraying shielding oil is shielding oil to be sprayed to be fillet 10 shapes on the dielectric layer 9 or be waffle-like pattern, the 1st, 3, fillet 10 positions of spraying are identical on the 2n-1 layer dielectric layer 9, and the 2nd, 4, every fillet 10 positions of spraying are positioned at the centre of per two adjacent fillets 10 on the adjacent dielectric 9 (characteristic of this shielding oil are not allow electrode gas be deposited on fillet 10 surfaces with shielding oil spraying on the 2n layer dielectric layer 9, and the shielding oil on the fillet 10 is heated volatilization in the vapor deposited metal process, to making the disconnected herein bar of electrode layer 8, this is a prior art).After vapor deposited metal is to the dielectric layer 9 that is printed on fillet 10, just formed interrupted electrode layer 8 like this.Reach by aforesaid operations and just to have formed the motherboard (referring to accompanying drawing 1 shown in) of dielectric layer 9 after the desired number of plies with the making film capacitor chip of electrode layer 8 mutual superposition.
The method of spraying shielding oil can adopt oil atomizer composite set 31 to carry out spray printing; Also can adopt shielding oiling roller 32 to be coated with the method for seal; Also can adopt oil atomizer composite set 31 spray printings and shielding oiling roller 32 to be coated with the method for seal combination.
Adopting oil atomizer composite set 31 to arrange by one group parallels with carrier surface 11 and constitutes (if carrier surface 11 is the face of cylinder, the oil atomizer of being arranged is parallel with the bus on the face of cylinder) with the perpendicular oil atomizer of carrier surface 11 directions of motion.The using method that adopts oil atomizer composite set 31 is that the oil atomizer of arranging is parallel and perpendicular with carrier surface 11 directions of motion with carrier surface 11, distance between each oil nozzle is two times of distance of chip both ends of the surface, the vertical direction that allows oil atomizer composite set 31 move along carrier surface 11 is done back and forth, and string moves, (said one-period is the needed time of motion process of back and forth every or circulation primary to flat carrier to carrier 1 every motion one-period; To face of cylinder carrier is the needed time of motion process that whenever rotates a circle.) oil atomizer composite set 31 just string make a movement, the moving distance of string is identical with the distance of chip both ends of the surface, makes spray printing in lip-deep fillet 10 mutual dislocation of adjacent dielectric.
Adopting shielding to block one of method is to use to block and is with 7 to shield, to block and be with 7 in the depositing electrode gas zones, to lean against medium of movement layer 9 surface, and can be synchronized with the movement with dielectric layer 9 surfaces, when to dielectric layer 9 surface deposition electrode gas, be blocked with blocking dielectric layer 9 surface portions that bar 71 covers and to be deposited upper electrode layer 8 on 7, thereby form interrupted electrode layer 8 on dielectric layer 9 surfaces.Block with the shape of blocking bar 71 on 7 and can be fillet net-like pattern (referring to Fig. 5).Can be with 7 to make the endless belt with blocking, the endless belt be blocked bar 71 by 2 groups or 4 groups or n group (n is an even number) and is formed, and every group blocks the position of bar 71 and the position mutual dislocation that two adjacent groups is blocked bar 71, and all length of blocking bar 71 are identical.If carrier surface 11 is the face of cylinder, then every group of length of blocking bar 71 is m/one (m is an odd number) of carrier surface 11 girths.Like this, when carrier surface 11 is made circular motion, can make on every layer of dielectric layer 9 the fillet 10 position mutual dislocation of formation on fillet 10 positions that form and the adjacent dielectric 9.
The method that adopts shielding oiling roller 32 to be coated with seal can will shield oil with the shielding oiling roller 32 that is carved with strip or waffle-like pattern (the band pattern is identical with blocking) and be coated with and print on the dielectric layer 9.
On the both ends of the surface of chip, form metal lead surface 12 or 13 backs (shown in accompanying drawing 3), promptly become a kind of mounted type film capacitor,, just become the plug-in capacitor if on the metal lead surface 13 at chip two ends, burn-on metal leg 14 again.
The both ends of the surface of chip are meant with shielding oil or the shielding method of blocking and make electrode layer the cross section at disconnected bar place occur.
Can in the medium vapour deposition process, use cold-trap 21 (a kind of vacuum pumping opening).Can in metal vapor deposition, use cold-trap.Both can in evaporation, use cold-trap 44; Also can in magnetron sputtering method, use cold-trap 45; Can also in the aura method, use cold-trap 46.That is to say and to use cold-trap 21 at the station 2 of deposition medium gas; Also can use cold-trap 44,45,46 at the station 4 of depositing electrode gas, the vacuum state of the station 4 of the station 2 of deposition medium gas or depositing electrode gas keeps stable in the time of can guaranteeing to make motherboard like this.
Make motherboard and adopt mode of heating generation dielectric gas or carrier surface 11 and motherboard surface temperature are changed, have a negative impact with the mode of heating evaporation electrode.For this reason, can to carrier 1 feed the temperature adjustment medium or in carrier 1 the serviceability temperature adjusting device come regulating and controlling temperature.
The motherboard of making 20 is along with the number of plies increases, and thickness is thickening gradually.Because the motherboard heat-transfer capability is relatively poor, only come regulating and controlling temperature by carrier 1, assurance motherboard 20 surface temperatures that can not be desirable are stable.For making motherboard 20 surface temperatures stable, (or before depositing electrode gas) can serviceability temperature adjusting device 5 after with medium vapour deposition process deposition medium gas; (or before deposition medium gas) can serviceability temperature adjusting device 6 after using metal vapor deposition depositing electrode gas.Temperature-adjusting device 5 and temperature-adjusting device 6 should be near carrier surfaces 11.Temperature-adjusting device 5 can adopt the conduction heat transfer mode on rolling roller 51 contact motherboards 20 surfaces to carry out adjustment; Also can adopt non-contacting temperature adjusting plate 52 radiant heat transfer modes to carry out adjustment; Can also adopt and spray into temperature adjustment gas 53 convective heat transfer modes and carry out adjustment; Can also adopt the trip temperature that is combined into of above-mentioned heat transfer type to regulate.Temperature-adjusting device 6 can adopt the conduction heat transfer mode on rolling roller 61 contact motherboards 20 surfaces to carry out adjustment; Also can adopt non-contacting temperature adjusting plate 62 radiant heat transfer modes to carry out adjustment; Can also adopt and spray into temperature adjustment gas 63 convective heat transfer modes and carry out adjustment; Can also adopt the trip temperature that is combined into of above-mentioned heat transfer type to regulate.Rolling roller 51,61 and temperature adjusting plate 52,62 can feed the temperature adjustment medium or the serviceability temperature adjusting device is come regulating and controlling temperature.Temperature adjustment gas 53,63 can adopt nitrogen or other inert gas.Station at spray temperature adjustment gas 53 can use cold-trap 54.Station at spray temperature adjustment gas 63 can use cold-trap 64.Can guarantee the state pressure of environment like this.
The said film capacitor of the present invention is to reach the metal lead surface 12 or 13 that forms in both ends of the surface by the dielectric layer 9 of mutual superposition and electrode layer 8 to constitute, wherein dielectric layer 9 is to adopt manufacture method of the present invention with the manufacture method of electrode layer 8 mutual superposition, and dielectric layer 9 thickness ranges are 0.01 micron to 10 microns.Dielectric layer 9 can be made of the inorganic compound insulating material; Also can constitute by the macromolecular material of polymerisation in bulk; Also can be compound medium layer 9 constitutes.
Employing the invention has the beneficial effects as follows:
1, the complicated procedures of forming (operations such as dielectric material synthesizes (batch mixing), membrane (sintering), spray (steam seal) electrode, cuts, winding core, flattening, thermal finalization) that will make film capacitor is reduced to one procedure, has improved production efficiency.
2, owing to used the bigger inorganic material of dielectric constant as dielectric film, and the thickness of dielectric layer (film) is attenuate (can reach below 0.01 micron) greatly, the membrane type capacitor volume that produces is compared with the same model traditional capacitor can be reduced 5 to 100 times.
3, the equipment manufacturing cost of using reduces, the capacitor raw material reduce, production cost reduces.
4, the film capacitor stable performance that produces with the present invention, reliable: inductance is minimum, is difficult for producing corona.
5, can make that capacitor is integrated to be achieved.
Description of drawings
Fig. 1 is the motherboard schematic cross-section of producing with the present invention.
Fig. 2 is the chip schematic diagram of producing with the present invention.
Fig. 3 is the film capacitor schematic diagram of producing with the present invention.
Fig. 4 is that the inventive method is formed schematic diagram.
Fig. 5 be adopt in the screen method of the present invention block the band schematic diagram.
Fig. 6 is a kind of implementation method of the present invention and device schematic diagram.
Among the figure 1, carrier, 2. station, the 3. oily device of spraying shielding, 4. station, 5. temperature-adjusting device, 6. temperature-adjusting device 7. blocks band, 8. electrode layer, 9. dielectric layer, 10. fillet, 11. carrier surfaces, 12. the metal lead surface, 13. metal lead surfaces, 14. wires (pin), 15. tank body, 16. thickness of dielectric layers checkout gears, 17. electrode layers thickness checkout gears, 18. temperature-detecting device, 19. temperature-detecting devices, 20. motherboards, 21. cold-trap, 22. deposition inorganic medium gas device, 31. oil atomizer composite sets, 32 shielding oiling rollers, 41. evaporation of metal stations, 42. metal sputtering stations, 43. the aura station, 44. cold-traps, 45. cold-traps, 46. cold-trap, 51. rolling rollers, 52. temperature adjusting plates, 53. temperature adjustment gas, 54. cold-traps, 61. rolling rollers, 62. the temperature adjusting plate, 63. temperature adjustment gases, 64. cold-traps.
Embodiment
With reference to the accompanying drawings implementation method of the present invention is further elaborated:
Implementation method 1 is in the tank body 15 of a vacuum state, and the cylinder that employing can be rotated continuously is as carrier 1, and its face of cylinder is carrier surface 11.Direction of rotation along carrier 1 around carrier surface 11 is provided with deposition medium gas station 2, the spraying oily device 3 of shielding and depositing electrode gas station respectively.Use deposition inorganic medium gas device 22 at deposition medium gas station 2.This deposition inorganic medium gas device is delivered to the dielectric layer 9 that carrier surface 11 is deposited as silicon dioxide after can adopting the electron beam mode of heating with solid-state silicon dioxide heating and gasifying; Also can adopt the mode of active ion plating that solid state si is activated and be the activated silica ion, deliver to carrier surface 11 and oxidation again and be combined into silicon dioxide (or silicon monoxide and silica mixture) and be deposited on carrier surface 11 and form dielectric layers 9.Depositing electrode gas station is divided into evaporation of metal station 41, metal sputtering station 42 and aura station 43.Use the evaporation of metal device at evaporation of metal station 41, use the metal sputtering device, use the aura device at aura station 43 at metal sputtering station 42.The aura device is arranged between deposition medium gas station 2 and the oily device 3 of spraying shielding.Serviceability temperature regulation and control plate 52 between deposition medium gas station 2 and aura station 43.Serviceability temperature regulation and control plate 62 between evaporation of metal station 41 and deposition medium gas station 2.On temperature adjusting plate 52 and temperature adjusting plate 62, spray into temperature adjustment gas 53,63 by conduit.Station at spray temperature adjustment gas 53 can use cold-trap 54.Station at spray temperature adjustment gas 63 can use cold-trap 64.Use cold-trap 21 at deposition medium gas station 2.Use cold-trap 44, cold-trap 45, cold-trap 46 respectively at evaporation of metal station 41, metal sputtering station 42 and aura station 43.Between deposition medium gas station 2 and the oily device 3 of spraying shielding, adopt thickness of dielectric layers checkout gear 16.Between evaporation of metal station 41 and deposition medium gas station 2, adopt electrode layers thickness checkout gear 17.Between temperature adjusting plate 52 and the oily device 3 of spraying shielding, temperature-detecting device 18 is set.Between temperature adjusting plate 62 and deposition medium gas station 2, temperature-detecting device 19 is set.The oily device 3 of spraying shielding can adopt the oil atomizer composite set 31 of continuous oil spout.Feed adjustment liquid (or adjustment gas) to carrier 1.Feed adjustment liquid (or adjustment gas) to temperature adjusting plate 52 and temperature adjusting plate 62.Each station and device are as arranging by shown in Figure 6, then when carrier 1 rotates clockwise continuously, deposit (spraying) dielectric gass at deposition medium gas station 2 to carrier surface 11 earlier, make it on carrier surface 11, form dielectric layer 9, after cooling, enter aura station 43 districts and do the processing of aura cleaning hacking, go up shielding oil through the oily device 3 of spraying shielding to dielectric layer 9 surface sprayings subsequently, carry out metal sputtering through metal sputtering station 42 again, pass through evaporation of metal station 41 then, to the dielectric layer 9 surface deposition metals that are printed on shielding oil, make it form electrode layer 8, after cooling, get back to deposition medium gas station 2 again, to its layer on surface of metal deposition (spraying) dielectric gas, dielectric layer 9 motherboard 20 folded mutually with electrode layer 8 just made in so constantly circulation.In making the process of motherboard 20, can detect automatically and control the discharge rate of dielectric gas, electrode gas and bed thickness, surface temperature, carrier speed, adjustment ability etc.Motherboard 20 is taken off from carrier 1, and the bulk that is cut into has as shown in Figure 2 promptly been made chip, again metal lead surface 13 is sprayed in the both ends of the surface plating of chip, and the wire of burn-oning (pin) 14 has promptly been made film capacitor as shown in Figure 3.
Claims (12)
1. the manufacture method of a film capacitor, make the motherboard of dielectric layer [9] and electrode layer [8] mutual superposition earlier, again motherboard is cut into block chip, the both ends of the surface mill of chip is cut form metal lead surface [12] or the both ends of the surface of chip are plated metal spraying again and belonged to formation metal lead surface [13], the manufacture method of its motherboard is: under vacuum state, adopt medium vapour deposition process deposition medium gas to form dielectric layer [9] to a moving carrier surface [11], shield at dielectric layer [9] surface of deposition spraying shielding oil then, adopt metal vapor deposition depositing electrode gas to form electrode layer [8] on dielectric layer [9] surface of conductively-closed again, adopt medium vapour deposition process deposition medium gas to form dielectric layer [9] to electrode layer [8] surface again, carry out the medium vapour deposition according to this reiteration, shielding, vapor deposited metal, described employing spraying shielding oil is the method that adopts oil atomizer composite set [31] spray printing, it is characterized in that: the using method of the oil atomizer composite set [31] that is adopted is that the oil atomizer of arranging is parallel with carrier surface [11] and perpendicular with carrier surface [11] direction of motion, distance between each oil nozzle is two times of distance of chip both ends of the surface, string moves to allow oil atomizer composite set [31] do back and forth along the vertical direction of carrier surface [11] motion, the every motion one-period of carrier [1], oil atomizer composite set [31] just string makes a movement, and the moving distance of string is identical with the distance of chip both ends of the surface.
2. method according to claim 1 is characterized in that: the medium vapour deposition process that is adopted is the method for physical vaporous deposition or chemical vapour deposition technique or physical vaporous deposition and chemical vapour deposition technique combination.
3. method according to claim 1 is characterized in that: the method that method that method that method that said metal vapor deposition employing evaporation or employing magnetron sputtering method or employing magnetron sputtering method and evaporation make up or employing aura method and evaporation make up or employing aura method and magnetron sputtering method make up or employing aura method and magnetron sputtering method and evaporation make up.
4. method according to claim 1 is characterized in that: feed the temperature adjustment medium in the moving carrier [1] or serviceability temperature adjusting device in carrier [1].
5. method according to claim 1 is characterized in that using cold-trap [21] in the medium vapour deposition process.
6. method according to claim 1 is characterized in that using cold-trap in metal vapor deposition.
7. method according to claim 1 is characterized in that serviceability temperature adjusting device [5] after using medium vapour deposition process deposition medium gas.
8. method according to claim 7 is characterized in that: temperature-adjusting device [5] adopts rolling roller [51] or adopts temperature adjusting plate [52] or adopt the combination that sprays into temperature adjustment gas [53] or employing rolling roller [51], temperature adjusting plate [52], sprays into temperature adjustment gas [53].
9. method according to claim 1 is characterized in that serviceability temperature adjusting device [6] after using metal vapor deposition depositing electrode gas.
10. method according to claim 9 is characterized in that: temperature-adjusting device [6] adopts rolling roller [61] or adopts temperature adjusting plate [62] or adopt the combination that sprays into temperature adjustment gas [63] or employing rolling roller [61], temperature adjusting plate [62], sprays into temperature adjustment gas [63].
11. method according to claim 1 is characterized in that: said carrier [1] adopts cylinder, and its face of cylinder is carrier surface [11].
12. a kind of film capacitor that method according to claim 1 obtains, dielectric layer [9] by mutual superposition constitutes with electrode layer [8] and at the metal lead surface that both ends of the surface form, it is characterized in that: dielectric layer [9] thickness range is 0.01 micron to 10 microns, and dielectric layer [9] is made of the inorganic compound insulating material or is constituted or be compound medium layer [9] by the macromolecular material of polymerisation in bulk.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB001189484A CN1297997C (en) | 2000-08-12 | 2000-08-12 | Film capacitor and its production method |
| JP2000339426A JP2002057065A (en) | 2000-08-12 | 2000-11-07 | Thin-film capacitor and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB001189484A CN1297997C (en) | 2000-08-12 | 2000-08-12 | Film capacitor and its production method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1321993A CN1321993A (en) | 2001-11-14 |
| CN1297997C true CN1297997C (en) | 2007-01-31 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB001189484A Expired - Lifetime CN1297997C (en) | 2000-08-12 | 2000-08-12 | Film capacitor and its production method |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP2002057065A (en) |
| CN (1) | CN1297997C (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102005037875B3 (en) * | 2005-08-10 | 2007-03-29 | Siemens Ag | Process to manufacture multi-layer thin-film electrical capacitors in which alternate pairs of materials are transposed relative to each other |
| CN103093975A (en) * | 2011-10-27 | 2013-05-08 | 尹剑 | Manufacturing device of multi-layer deposition capacitor |
| JP2013247206A (en) * | 2012-05-25 | 2013-12-09 | Kojima Press Industry Co Ltd | Film capacitor element and film capacitor and manufacturing method of film capacitor |
| CN102709053A (en) * | 2012-06-04 | 2012-10-03 | 电子科技大学 | Polymer stack capacitor and manufacturing method thereof |
| CN107017087B (en) | 2015-12-28 | 2019-05-14 | 财团法人工业技术研究院 | capacitor structure |
| CN112002567B (en) * | 2020-08-24 | 2022-02-18 | 安徽源光电器有限公司 | Processing method for evaporation of base film for capacitor |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000216049A (en) * | 1999-01-25 | 2000-08-04 | Matsushita Electric Ind Co Ltd | Manufacture for organic thin-film capacitor |
-
2000
- 2000-08-12 CN CNB001189484A patent/CN1297997C/en not_active Expired - Lifetime
- 2000-11-07 JP JP2000339426A patent/JP2002057065A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000216049A (en) * | 1999-01-25 | 2000-08-04 | Matsushita Electric Ind Co Ltd | Manufacture for organic thin-film capacitor |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2002057065A (en) | 2002-02-22 |
| CN1321993A (en) | 2001-11-14 |
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Granted publication date: 20070131 |