CN1294390A - 场响应增强的磁元件及其制造方法 - Google Patents
场响应增强的磁元件及其制造方法 Download PDFInfo
- Publication number
- CN1294390A CN1294390A CN00131625A CN00131625A CN1294390A CN 1294390 A CN1294390 A CN 1294390A CN 00131625 A CN00131625 A CN 00131625A CN 00131625 A CN00131625 A CN 00131625A CN 1294390 A CN1294390 A CN 1294390A
- Authority
- CN
- China
- Prior art keywords
- layer
- ferromagnetic
- metal layers
- bottom metal
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/68—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent
- G11B5/70—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent on a base layer
- G11B5/716—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent on a base layer characterised by two or more magnetic layers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Power Engineering (AREA)
- Nanotechnology (AREA)
- Hall/Mr Elements (AREA)
- Thin Magnetic Films (AREA)
- Magnetic Heads (AREA)
- Semiconductor Memories (AREA)
- Measuring Magnetic Variables (AREA)
- Mram Or Spin Memory Techniques (AREA)
Abstract
Description
Claims (11)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/422,447 US6205052B1 (en) | 1999-10-21 | 1999-10-21 | Magnetic element with improved field response and fabricating method thereof |
US09/422,447 | 1999-10-21 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1294390A true CN1294390A (zh) | 2001-05-09 |
CN1192392C CN1192392C (zh) | 2005-03-09 |
Family
ID=23674929
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB001316257A Expired - Lifetime CN1192392C (zh) | 1999-10-21 | 2000-10-20 | 场响应增强的磁元件及其制造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US6205052B1 (zh) |
EP (1) | EP1094329A3 (zh) |
JP (1) | JP2001203405A (zh) |
KR (1) | KR100807295B1 (zh) |
CN (1) | CN1192392C (zh) |
SG (1) | SG87185A1 (zh) |
TW (1) | TW498167B (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100339915C (zh) * | 2002-08-30 | 2007-09-26 | 飞思卡尔半导体公司 | 隧道结磁电阻元件及其制备方法 |
CN1607607B (zh) * | 2003-09-26 | 2010-05-12 | 三星电子株式会社 | 包括均匀厚度隧道膜的磁随机存取存储器及其制造方法 |
CN103682084A (zh) * | 2012-08-30 | 2014-03-26 | 三星电子株式会社 | 磁存储器件及其形成方法 |
CN104134748A (zh) * | 2014-07-17 | 2014-11-05 | 北京航空航天大学 | 一种信息传感及存储器件及其制备方法 |
CN114730572A (zh) * | 2020-03-30 | 2022-07-08 | 西部数据技术公司 | 用于减轻平面外力和挠曲振动的相位变化的基于压电的微致动器布置 |
Families Citing this family (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4309075B2 (ja) | 2000-07-27 | 2009-08-05 | 株式会社東芝 | 磁気記憶装置 |
US6803615B1 (en) * | 2001-02-23 | 2004-10-12 | Western Digital (Fremont), Inc. | Magnetic tunnel junction MRAM with improved stability |
TW560095B (en) * | 2001-04-02 | 2003-11-01 | Canon Kk | Magnetoresistive element, memory element having the magnetoresistive element, and memory using the memory element |
DE10128964B4 (de) * | 2001-06-15 | 2012-02-09 | Qimonda Ag | Digitale magnetische Speicherzelleneinrichtung |
US6531723B1 (en) * | 2001-10-16 | 2003-03-11 | Motorola, Inc. | Magnetoresistance random access memory for improved scalability |
US6597597B2 (en) * | 2001-11-13 | 2003-07-22 | Hewlett-Packard Company | Low temperature attaching process for MRAM components |
US6747301B1 (en) | 2002-02-06 | 2004-06-08 | Western Digital (Fremont), Inc. | Spin dependent tunneling barriers formed with a magnetic alloy |
JP4595541B2 (ja) * | 2002-07-09 | 2010-12-08 | 日本電気株式会社 | 磁気ランダムアクセスメモリ |
US7095646B2 (en) * | 2002-07-17 | 2006-08-22 | Freescale Semiconductor, Inc. | Multi-state magnetoresistance random access cell with improved memory storage density |
US6654278B1 (en) * | 2002-07-31 | 2003-11-25 | Motorola, Inc. | Magnetoresistance random access memory |
US6831312B2 (en) | 2002-08-30 | 2004-12-14 | Freescale Semiconductor, Inc. | Amorphous alloys for magnetic devices |
US6903909B2 (en) * | 2002-11-01 | 2005-06-07 | Hewlett-Packard Development Company, L.P. | Magnetoresistive element including ferromagnetic sublayer having smoothed surface |
US6743642B2 (en) * | 2002-11-06 | 2004-06-01 | International Business Machines Corporation | Bilayer CMP process to improve surface roughness of magnetic stack in MRAM technology |
US20040175845A1 (en) * | 2003-03-03 | 2004-09-09 | Molla Jaynal A. | Method of forming a flux concentrating layer of a magnetic device |
KR20040084095A (ko) * | 2003-03-26 | 2004-10-06 | 주식회사 하이닉스반도체 | 마그네틱 램의 형성방법 |
US6956763B2 (en) * | 2003-06-27 | 2005-10-18 | Freescale Semiconductor, Inc. | MRAM element and methods for writing the MRAM element |
US6862211B2 (en) * | 2003-07-07 | 2005-03-01 | Hewlett-Packard Development Company | Magneto-resistive memory device |
US6967366B2 (en) * | 2003-08-25 | 2005-11-22 | Freescale Semiconductor, Inc. | Magnetoresistive random access memory with reduced switching field variation |
US20050073878A1 (en) * | 2003-10-03 | 2005-04-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multi-sensing level MRAM structure with different magnetoresistance ratios |
KR101001742B1 (ko) * | 2003-10-24 | 2010-12-15 | 삼성전자주식회사 | 자기 램 및 그 제조방법 |
US7072209B2 (en) * | 2003-12-29 | 2006-07-04 | Micron Technology, Inc. | Magnetic memory having synthetic antiferromagnetic pinned layer |
US7105372B2 (en) | 2004-01-20 | 2006-09-12 | Headway Technologies, Inc. | Magnetic tunneling junction film structure with process determined in-plane magnetic anisotropy |
US8465853B2 (en) * | 2004-03-24 | 2013-06-18 | Marvell World Trade Ltd. | Glassy metal disk |
US7611912B2 (en) * | 2004-06-30 | 2009-11-03 | Headway Technologies, Inc. | Underlayer for high performance magnetic tunneling junction MRAM |
US7098495B2 (en) * | 2004-07-26 | 2006-08-29 | Freescale Semiconducor, Inc. | Magnetic tunnel junction element structures and methods for fabricating the same |
JP4550552B2 (ja) * | 2004-11-02 | 2010-09-22 | 株式会社東芝 | 磁気抵抗効果素子、磁気ランダムアクセスメモリ、磁気抵抗効果素子の製造方法 |
US7129098B2 (en) * | 2004-11-24 | 2006-10-31 | Freescale Semiconductor, Inc. | Reduced power magnetoresistive random access memory elements |
US7973349B2 (en) * | 2005-09-20 | 2011-07-05 | Grandis Inc. | Magnetic device having multilayered free ferromagnetic layer |
US7777261B2 (en) * | 2005-09-20 | 2010-08-17 | Grandis Inc. | Magnetic device having stabilized free ferromagnetic layer |
US7894248B2 (en) * | 2008-09-12 | 2011-02-22 | Grandis Inc. | Programmable and redundant circuitry based on magnetic tunnel junction (MTJ) |
JP2009055050A (ja) * | 2008-10-06 | 2009-03-12 | Canon Anelva Corp | スピンバルブ型巨大磁気抵抗薄膜またはtmr膜の製造方法 |
KR101178767B1 (ko) * | 2008-10-30 | 2012-09-07 | 한국과학기술연구원 | 이중 자기 이방성 자유층을 갖는 자기 터널 접합 구조 |
US8508221B2 (en) | 2010-08-30 | 2013-08-13 | Everspin Technologies, Inc. | Two-axis magnetic field sensor having reduced compensation angle for zero offset |
US9368136B2 (en) * | 2014-02-27 | 2016-06-14 | Seagate Technology Llc | Magnetoresistive sensor having synthetic antiferromagnetic layer in top and bottom shields |
US20150263267A1 (en) * | 2014-03-13 | 2015-09-17 | Hiroyuki Kanaya | Magnetic memory and method for manufacturing the same |
KR102465539B1 (ko) | 2015-09-18 | 2022-11-11 | 삼성전자주식회사 | 자기 터널 접합 구조체를 포함하는 반도체 소자 및 그의 형성 방법 |
US10115892B2 (en) | 2015-11-23 | 2018-10-30 | Headway Technologies, Inc. | Multilayer structure for reducing film roughness in magnetic devices |
US9780299B2 (en) | 2015-11-23 | 2017-10-03 | Headway Technologies, Inc. | Multilayer structure for reducing film roughness in magnetic devices |
US10622047B2 (en) | 2018-03-23 | 2020-04-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Free layer structure in magnetic random access memory (MRAM) for Mo or W perpendicular magnetic anisotropy (PMA) enhancing layer |
US10522752B1 (en) | 2018-08-22 | 2019-12-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Magnetic layer for magnetic random access memory (MRAM) by moment enhancement |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5173873A (en) * | 1990-06-28 | 1992-12-22 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | High speed magneto-resistive random access memory |
US5329486A (en) * | 1992-04-24 | 1994-07-12 | Motorola, Inc. | Ferromagnetic memory device |
US5617071A (en) * | 1992-11-16 | 1997-04-01 | Nonvolatile Electronics, Incorporated | Magnetoresistive structure comprising ferromagnetic thin films and intermediate alloy layer having magnetic concentrator and shielding permeable masses |
US5583725A (en) * | 1994-06-15 | 1996-12-10 | International Business Machines Corporation | Spin valve magnetoresistive sensor with self-pinned laminated layer and magnetic recording system using the sensor |
US5909345A (en) * | 1996-02-22 | 1999-06-01 | Matsushita Electric Industrial Co., Ltd. | Magnetoresistive device and magnetoresistive head |
US5640343A (en) * | 1996-03-18 | 1997-06-17 | International Business Machines Corporation | Magnetic memory array using magnetic tunnel junction devices in the memory cells |
US5764567A (en) * | 1996-11-27 | 1998-06-09 | International Business Machines Corporation | Magnetic tunnel junction device with nonferromagnetic interface layer for improved magnetic field response |
JP3593220B2 (ja) * | 1996-10-11 | 2004-11-24 | アルプス電気株式会社 | 磁気抵抗効果多層膜 |
US5768181A (en) * | 1997-04-07 | 1998-06-16 | Motorola, Inc. | Magnetic device having multi-layer with insulating and conductive layers |
US5940319A (en) * | 1998-08-31 | 1999-08-17 | Motorola, Inc. | Magnetic random access memory and fabricating method thereof |
-
1999
- 1999-10-21 US US09/422,447 patent/US6205052B1/en not_active Expired - Lifetime
-
2000
- 2000-10-03 TW TW089120549A patent/TW498167B/zh not_active IP Right Cessation
- 2000-10-06 KR KR1020000058911A patent/KR100807295B1/ko active IP Right Grant
- 2000-10-13 SG SG200005854A patent/SG87185A1/en unknown
- 2000-10-18 JP JP2000317501A patent/JP2001203405A/ja active Pending
- 2000-10-19 EP EP00122809A patent/EP1094329A3/en not_active Withdrawn
- 2000-10-20 CN CNB001316257A patent/CN1192392C/zh not_active Expired - Lifetime
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100339915C (zh) * | 2002-08-30 | 2007-09-26 | 飞思卡尔半导体公司 | 隧道结磁电阻元件及其制备方法 |
CN1607607B (zh) * | 2003-09-26 | 2010-05-12 | 三星电子株式会社 | 包括均匀厚度隧道膜的磁随机存取存储器及其制造方法 |
CN103682084A (zh) * | 2012-08-30 | 2014-03-26 | 三星电子株式会社 | 磁存储器件及其形成方法 |
CN103682084B (zh) * | 2012-08-30 | 2017-10-31 | 三星电子株式会社 | 磁存储器件及其形成方法 |
CN104134748A (zh) * | 2014-07-17 | 2014-11-05 | 北京航空航天大学 | 一种信息传感及存储器件及其制备方法 |
CN104134748B (zh) * | 2014-07-17 | 2017-01-11 | 北京航空航天大学 | 一种信息传感及存储器件及其制备方法 |
CN114730572A (zh) * | 2020-03-30 | 2022-07-08 | 西部数据技术公司 | 用于减轻平面外力和挠曲振动的相位变化的基于压电的微致动器布置 |
Also Published As
Publication number | Publication date |
---|---|
JP2001203405A (ja) | 2001-07-27 |
US6205052B1 (en) | 2001-03-20 |
CN1192392C (zh) | 2005-03-09 |
SG87185A1 (en) | 2002-03-19 |
EP1094329A2 (en) | 2001-04-25 |
TW498167B (en) | 2002-08-11 |
KR20010050902A (ko) | 2001-06-25 |
EP1094329A3 (en) | 2004-09-01 |
KR100807295B1 (ko) | 2008-02-28 |
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Legal Events
Date | Code | Title | Description |
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BB1A | Publication of application | ||
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: FREEDOM SEMICONDUCTORS CO. Free format text: FORMER OWNER: MOTOROLA, INC. Effective date: 20040820 |
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C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20040820 Address after: Texas in the United States Applicant after: FreeScale Semiconductor Address before: Illinois Instrunment Applicant before: Motorola, Inc. |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20090306 Address after: Arizona USA Patentee after: EVERSPIN TECHNOLOGIES, Inc. Address before: Texas in the United States Patentee before: FreeScale Semiconductor |
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ASS | Succession or assignment of patent right |
Owner name: EVERSPIN TECHNOLOGIES, INC. Free format text: FORMER OWNER: FREEDOM SEMICONDUCTORS CO. Effective date: 20090306 |
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Granted publication date: 20050309 |
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CX01 | Expiry of patent term |