CN1292570A - 具有至少一个电容的集成电路及其制造方法 - Google Patents
具有至少一个电容的集成电路及其制造方法 Download PDFInfo
- Publication number
- CN1292570A CN1292570A CN001309919A CN00130991A CN1292570A CN 1292570 A CN1292570 A CN 1292570A CN 001309919 A CN001309919 A CN 001309919A CN 00130991 A CN00130991 A CN 00130991A CN 1292570 A CN1292570 A CN 1292570A
- Authority
- CN
- China
- Prior art keywords
- sidepiece
- raceway groove
- integrated circuit
- electric capacity
- capacitance electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000000463 material Substances 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 239000003990 capacitor Substances 0.000 claims abstract description 22
- 239000004020 conductor Substances 0.000 claims abstract description 19
- 238000000151 deposition Methods 0.000 claims abstract description 6
- 238000001039 wet etching Methods 0.000 claims abstract description 6
- 239000012528 membrane Substances 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 6
- 238000007373 indentation Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 37
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 16
- 229920005591 polysilicon Polymers 0.000 description 13
- 230000004888 barrier function Effects 0.000 description 11
- 238000005260 corrosion Methods 0.000 description 9
- 230000007797 corrosion Effects 0.000 description 9
- 238000005530 etching Methods 0.000 description 9
- 229910052721 tungsten Inorganic materials 0.000 description 8
- 239000010937 tungsten Substances 0.000 description 8
- 239000003518 caustics Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 238000005498 polishing Methods 0.000 description 5
- 239000011241 protective layer Substances 0.000 description 5
- 239000011135 tin Substances 0.000 description 5
- 229910052718 tin Inorganic materials 0.000 description 5
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 5
- 229910021342 tungsten silicide Inorganic materials 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- -1 tungsten nitride Chemical class 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910021341 titanium silicide Inorganic materials 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- WOIHABYNKOEWFG-UHFFFAOYSA-N [Sr].[Ba] Chemical compound [Sr].[Ba] WOIHABYNKOEWFG-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 description 1
- 229960001231 choline Drugs 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910003446 platinum oxide Inorganic materials 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 210000002186 septum of brain Anatomy 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/84—Electrodes with an enlarged surface, e.g. formed by texturisation being a rough surface, e.g. using hemispherical grains
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/86—Electrodes with an enlarged surface, e.g. formed by texturisation having horizontal extensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/05—Making the transistor
- H10B12/053—Making the transistor the transistor being at least partially in a trench in the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/48—Data lines or contacts therefor
- H10B12/482—Bit lines
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (8)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19947082A DE19947082B4 (de) | 1999-09-30 | 1999-09-30 | Integrierte Speicherzellenanordnung mit mindestens einem Kondensator und einem Transistor und Verfahren zur Herstellung einer integrierten Speicherzelle |
DE19947082.0 | 1999-09-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1292570A true CN1292570A (zh) | 2001-04-25 |
CN1165997C CN1165997C (zh) | 2004-09-08 |
Family
ID=7923990
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB001309919A Expired - Fee Related CN1165997C (zh) | 1999-09-30 | 2000-09-30 | 具有至少一个电容的集成电路及其制造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6525363B1 (zh) |
JP (1) | JP2001127272A (zh) |
KR (1) | KR100744218B1 (zh) |
CN (1) | CN1165997C (zh) |
DE (1) | DE19947082B4 (zh) |
TW (1) | TW529162B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105374819A (zh) * | 2014-08-07 | 2016-03-02 | 富士通半导体股份有限公司 | 半导体器件及其制造方法 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI225691B (en) * | 2003-03-14 | 2004-12-21 | Nanya Technology Corp | A vertical NROM cell and method for fabrication the same |
EP1717861B1 (en) | 2005-04-27 | 2010-08-25 | STMicroelectronics Srl | Vertical MOSFET transistor operating as a selector in nonvolatile memory devices |
KR100772777B1 (ko) * | 2006-05-25 | 2007-11-01 | 주식회사 하이닉스반도체 | 반도체 소자 및 그의 형성 방법 |
TW201222778A (en) * | 2010-11-18 | 2012-06-01 | Ind Tech Res Inst | Trench capacitor structures and method of manufacturing the same |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0643719B1 (en) * | 1992-03-09 | 1998-10-21 | Ludwig Institute For Cancer Research | Nucleic acid sequences coding for or complementary to nucleic acid sequences coding for interleukin 9 receptor |
US5330928A (en) | 1992-09-28 | 1994-07-19 | Industrial Technology Research Institute | Method for fabricating stacked capacitors with increased capacitance in a DRAM cell |
JPH06326266A (ja) * | 1993-03-16 | 1994-11-25 | Mitsubishi Electric Corp | 半導体記憶装置およびその製造方法 |
JP2697645B2 (ja) | 1994-10-31 | 1998-01-14 | 日本電気株式会社 | 半導体装置の製造方法 |
EP0814498A1 (en) * | 1996-05-31 | 1997-12-29 | Texas Instruments Incorporated | Capacitor and its manufacturing process |
US5789267A (en) * | 1996-08-23 | 1998-08-04 | Mosel Vitelic, Inc. | Method of making corrugated cell contact |
US5909621A (en) * | 1997-02-05 | 1999-06-01 | Mosel Vitelic Inc. | Single-side corrugated cylindrical capacitor structure of high density DRAMs |
TW345714B (en) * | 1997-03-22 | 1998-11-21 | United Microelectronics Corp | Capacitive structure of DRAM and process for producing the same |
TW373323B (en) * | 1998-03-18 | 1999-11-01 | United Microelectronics Corporaiton | Dynamic RAM production method |
JP3630551B2 (ja) * | 1998-04-02 | 2005-03-16 | 株式会社東芝 | 半導体記憶装置及びその製造方法 |
-
1999
- 1999-09-30 DE DE19947082A patent/DE19947082B4/de not_active Expired - Fee Related
-
2000
- 2000-09-30 KR KR1020000057580A patent/KR100744218B1/ko not_active IP Right Cessation
- 2000-09-30 TW TW089120388A patent/TW529162B/zh not_active IP Right Cessation
- 2000-09-30 CN CNB001309919A patent/CN1165997C/zh not_active Expired - Fee Related
- 2000-10-02 JP JP2000302293A patent/JP2001127272A/ja active Pending
- 2000-10-02 US US09/677,433 patent/US6525363B1/en not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105374819A (zh) * | 2014-08-07 | 2016-03-02 | 富士通半导体股份有限公司 | 半导体器件及其制造方法 |
CN105374819B (zh) * | 2014-08-07 | 2019-03-15 | 富士通半导体股份有限公司 | 半导体器件及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
US6525363B1 (en) | 2003-02-25 |
TW529162B (en) | 2003-04-21 |
DE19947082B4 (de) | 2005-02-10 |
KR100744218B1 (ko) | 2007-07-30 |
JP2001127272A (ja) | 2001-05-11 |
CN1165997C (zh) | 2004-09-08 |
KR20010050781A (ko) | 2001-06-25 |
DE19947082A1 (de) | 2001-04-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1092403C (zh) | 半导体存储器件及其制造方法 | |
CN1143393C (zh) | 邻近字线侧壁形成的垂直器件和用于半导体芯片的方法 | |
CN1045349C (zh) | 具有覆埋位线元件的半导体器件及其制备方法 | |
CN1897305A (zh) | 垂直沟道半导体器件及其制造方法 | |
CN1278384C (zh) | 制造半导体器件的方法 | |
CN1173394C (zh) | 制造半导体集成电路器件的方法 | |
CN1518100A (zh) | 半导体器件及其制造方法 | |
CN1992278A (zh) | 具有竖直型沟道的半导体器件及其制造方法 | |
CN1767200A (zh) | 半导体存储装置及其制造方法 | |
CN1135628C (zh) | 非易失性存储单元 | |
CN1150612C (zh) | Dram单元装置及其制造方法 | |
CN1152425C (zh) | 制作具有垂直的mos晶体管的集成电路的方法 | |
CN1507034A (zh) | 用于制造具有在位线方向延伸的接触体的半导体器件的方法 | |
CN1126176C (zh) | 半导体存储器件 | |
CN1165997C (zh) | 具有至少一个电容的集成电路及其制造方法 | |
CN1097311C (zh) | 半导体装置的制造方法和半导体装置 | |
CN1666344A (zh) | 氮化物只读存储器存储单元阵列制造方法 | |
CN1216862A (zh) | 半导体存储器件及其制造方法 | |
CN1303694C (zh) | 动态随机存取存储单元及其制造方法 | |
CN1144291C (zh) | 半导体集成电路器件以及制造该器件的方法 | |
CN1855433A (zh) | 记忆体的制造方法 | |
CN1490871A (zh) | 具有柱型帽盖层的半导体器件及其制造方法 | |
CN1285120C (zh) | 部分垂直存储单元的双边角圆化制程 | |
CN1591875A (zh) | 具有沟槽电容器的动态随机存取存储器及其制造方法 | |
CN1542975A (zh) | 半导体器件及其制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
C56 | Change in the name or address of the patentee | ||
CP01 | Change in the name or title of a patent holder |
Address after: Munich, Germany Patentee after: Infineon Technologies AG Address before: Munich, Germany Patentee before: INFINEON TECHNOLOGIES AG |
|
TR01 | Transfer of patent right |
Effective date of registration: 20120918 Address after: Munich, Germany Patentee after: QIMONDA AG Address before: Munich, Germany Patentee before: Infineon Technologies AG |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20151230 Address after: German Berg, Laura Ibiza Patentee after: Infineon Technologies AG Address before: Munich, Germany Patentee before: QIMONDA AG |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20040908 Termination date: 20160930 |
|
CF01 | Termination of patent right due to non-payment of annual fee |