CN1287380A - Production of device by electron beam illumination method - Google Patents
Production of device by electron beam illumination method Download PDFInfo
- Publication number
- CN1287380A CN1287380A CN00126361A CN00126361A CN1287380A CN 1287380 A CN1287380 A CN 1287380A CN 00126361 A CN00126361 A CN 00126361A CN 00126361 A CN00126361 A CN 00126361A CN 1287380 A CN1287380 A CN 1287380A
- Authority
- CN
- China
- Prior art keywords
- wiring pattern
- minimum
- pattern
- square frame
- attached wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
- H01J37/3175—Projection methods, i.e. transfer substantially complete pattern to substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31761—Patterning strategy
- H01J2237/31767—Step and repeat
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31777—Lithography by projection
- H01J2237/31788—Lithography by projection through mask
Abstract
A method of forming an image of a device pattern by electron beam exposure is disclosed. According to the method, a rectangular block map of a device pattern is generated. The map has a number of rows and columns of blocks. Each block of the map defines a sub-pattern of the device pattern and the sub-patterns of the blocks together define the whole device pattern. A minimum feature size of the sub-pattern of each block is determined. The blocks are given the order of priority taking into account the minimum feature sizes of the sub-patterns. One of the sub-patterns of the blocks is extracted in accordance with the order of priority. The extracted sub-pattern is provided on a mask. An exposure is performed via the extracted sub-pattern provided on the mask to form an image of the extracted sub-pattern.
Description
The present invention relates to a kind of method of drawing device wiring pattern image by the electron beam irradiation.
At first, some terms that use in this specification once are described.
The minimum dimension of part: use this term to refer to the gap that regularly produces, measures between big or small or each part of minimum part here on device, its approximate synonym has " lines minimum widith " and " minimum clearances between lines ".Here use " minimum dimension of part " this term to be intended to comprise the term of " lines minimum widith " and " minimum clearances between lines " and so on." lines minimum widith " is meant the width of narrow lines." minimum spacings between lines " are meant between lines the width in narrow gap.
Mask: a kind of manufactured articles, make these rays draw wiring pattern when being subjected to the irradiation of electron ray, last going up at image plane (the normally surface of device in the processing) according to low and higher electronics intensity produces image.
The application facet of past at accelerated electron is to have descended the very big time.These effort continue development, develop the technology of writing with electron beam direct rapidly.The characteristics of this technology are that productivity ratio is lower, expect not satisfy the hope of trial production advanced device.A way that relaxes this problem is the deflection that has the plate adjusting electron beam of rectangular slits with two, thereby changes rectangle position to be illuminated in the process of once irradiating.To produce wiring pattern careful and/or the hope of good productivity during complex devices but this method can not satisfy, reason is, careful and complicated along with the device wire pattern of being processed, the increase in number materially of the rectangle radiation modality of dividing out from the device wire pattern.
Another kind of manufacture method relies on the irradiation of electron beam to the repetition formula mask that is depicted as wiring pattern on the transparent substrates.The wiring pattern of this repetition formula mask is for the attached wiring pattern of irradiation one cover repetition formula, for example part of device core same components array.Do like this and can reduce the required irradiation number of times in illuminated position.U.S. Pat-A 6,007,949 of people such as island discloses the manufacture method of this class mask on December 18th, 1999 Granting of patent right.This patent exposes one group of attached wiring pattern of non-repetition formula, for example one of device periphery group of assembly with the electron beam direct graphic.
For being limited in the number that can be depicted as the mask of wiring pattern on the transparent substrates, limited the size of transparent substrates.Therefore, the common practice is to obtain device for the data of preferentially producing limited each the wiring pattern group of repetition formula of number of masks.
Fig. 3 shows the part of device wire pattern.This device wire pattern comprises the attached wiring pattern of a plurality of repetition formulas and the attached wiring pattern of non-repetition formula, the attached wiring pattern of repetition formula separately all around be a rectangular box P2, the attached wiring pattern of non-repetition formula all around be a rectangular box P1.The size that can see minimum part in the rectangular box P1 is less than in the rectangular box P2.According to the general practice, the data of wiring pattern are used for making mask in the rectangular box P2, and the wiring pattern in the rectangular box P1 exposes it with the electron beam direct graphic.If thinner wiring pattern exposes it with the electron beam direct graphic among the rectangular box P1, to avoid then that short circuit and each lines broken string are very difficult between each lines.
Therefore, the purpose of this invention is to provide a kind of method, thereby can highly precisely expose the careful attached wiring pattern group of non-repetition formula of device wire pattern with electron beam irradiation formation device wire pattern image.
Method by electron beam irradiation formation device wire pattern image provided by the invention comprises the following steps:
Produce the device wiring pattern and have a plurality of block diagrams of embarking on journey into the square frame of row configuration, each square frame defines the attached wiring pattern of device wire pattern and the attached wiring pattern of each square frame, and both define the wiring pattern of entire device together;
Determine the minimum accessory size of the attached wiring pattern of each square frame in the block diagram;
Determine the order of priority of each square frame according to the minimum accessory size of the attached wiring pattern of each square frame;
Obtain the attached wiring pattern of one of them square frame according to order of priority;
On mask, form the attached wiring pattern of trying to achieve; With
Carry out the electron beam irradiation by the attached wiring pattern of obtaining that is located on the mask, form the image of the attached wiring pattern of being obtained.
Can further understand the present invention referring to accompanying drawing from following explanation.In the accompanying drawing:
Fig. 1 is the top view of the device wire pattern of device in making together with a part of block diagram that exemplifies;
Fig. 2 shows the block diagram of Fig. 1, has wherein provided the order of priority of each square frame;
Fig. 3 is and the similar view of Fig. 1, but illustrational be the basic principle of general electron beam irradiation system.
Referring to Fig. 1 and Fig. 2.Fig. 1 is the top view of the device part device wire pattern in making.
The rectangular box figure of device wire pattern data is produced by a computer.Many square frame B of block diagram embark on journey into row and arrange, and each square frame is defined by lines L.Each square frame defines the attached wiring pattern of device wire pattern, and the attached wiring pattern of all square frames defines the entire device wiring pattern together.In this example, the size at the sizableness of each rectangular box exposure position in the once electron beam irradiation process.
Computer is determined the size of the minimum part of the attached wiring pattern of each square frame in the square frame.In this example, computer is determined the minimum widith of the attached wiring pattern of each square frame by the whole attached wiring pattern of following the tracks of each square frame along the direction of x and y, thereby the width of narrow lines is provided.Computer is the minimum line thickness of each square frame relatively, and considers that according to comparative result shown in Figure 2 minimum line thickness provides order of priority to each square frame B.Among Fig. 2, numeral 1 to 5 expression order of priority.In other words, the minimum minimum line thickness of numeral 1 expression, the maximum minimum line thickness of numeral 5 expressions.
Computer is obtained one of them attached wiring pattern (being the attached wiring pattern in the square frame B1 among Fig. 2) of each square frame according to order of priority, and forms the attached wiring pattern of obtaining with general mask manufacture method on a mask.The attached wiring pattern that is located on the mask that the electron beam irradiation system passes through to be obtained shines, and forms the image of the attached wiring pattern of obtaining.
According to this manufacture method, the described part of device wire pattern is located on the mask fixing, thus the error on can be reduced in size to greatest extent.
At manufacturing object is that the minimum clearance of using when determining order of priority between each lines replaces minimum line thickness under the situation of the narrow memory cell in gap between each lines.After so revising, can produce the narrow device wire pattern of minimum clearance of definition excellence.
If the minimum line thickness of part of device wire pattern is the narrowest and extend on a plurality of square frames and open, then computer may be obtained the data of this part as attached wiring pattern.
Describe the present invention in detail in conjunction with most preferred embodiment above, but the experts in present technique field know, can propose many schemes and carry out various modifications and change with regard to the foregoing description according to the above description.Therefore, because these schemes, modification and change all belong to actual range of the present invention and spirit, thereby appending claims comprises these schemes, modification and change.
Claims (5)
1. the method by electron beam irradiation formation device wire pattern image comprises the following steps:
Produce the block diagram of device wiring pattern, block diagram has many square frames that row are arranged of embarking on journey into, and each square frame defines the attached wiring pattern of device wire pattern and the attached wiring pattern of each square frame, and both define the wiring pattern of entire device together;
Determine the minimum accessory size of the attached wiring pattern of each square frame in the block diagram;
Order of priority is provided for each square frame according to the minimum accessory size of the attached wiring pattern of each square frame;
Obtain the attached wiring pattern of one of them square frame according to order of priority;
On mask, form the attached wiring pattern of being obtained; With
Carry out the electron beam irradiation by the attached wiring pattern of being obtained that forms on the mask, form the image of the attached wiring pattern of being obtained.
2. the method for claim 1 is characterized in that, minimum accessory size is the size of the part of minimum.
3. the method for claim 1 is characterized in that, minimum part chi is the size of minimum clearance between each part.
4. the method for claim 1 is characterized in that, minimum accessory size is minimum line thickness.
5. the method for claim 1 is characterized in that, minimum accessory size is the minimum clearance between each lines.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP253176/1999 | 1999-09-07 | ||
| JP25317699A JP2001077007A (en) | 1999-09-07 | 1999-09-07 | Partial cell projection method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1287380A true CN1287380A (en) | 2001-03-14 |
Family
ID=17247608
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN00126361A Pending CN1287380A (en) | 1999-09-07 | 2000-09-07 | Production of device by electron beam illumination method |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2001077007A (en) |
| KR (1) | KR100376347B1 (en) |
| CN (1) | CN1287380A (en) |
| TW (1) | TW459286B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1295754C (en) * | 2001-08-27 | 2007-01-17 | 库克有限公司 | Method and system for single ion implantation |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63280419A (en) * | 1987-05-12 | 1988-11-17 | Fujitsu Ltd | Electron beam exposure |
| JPH0574692A (en) * | 1991-09-18 | 1993-03-26 | Fujitsu Ltd | Exposing method |
| JPH05175091A (en) * | 1991-12-20 | 1993-07-13 | Fujitsu Ltd | Method for exposure data processing |
| JP2910714B2 (en) * | 1996-12-26 | 1999-06-23 | 日本電気株式会社 | Electron beam drawing method |
| JPH10321509A (en) * | 1997-05-22 | 1998-12-04 | Canon Inc | Method and device for electron beam exposure |
-
1999
- 1999-09-07 JP JP25317699A patent/JP2001077007A/en active Pending
-
2000
- 2000-09-06 KR KR10-2000-0052773A patent/KR100376347B1/en not_active IP Right Cessation
- 2000-09-06 TW TW089118292A patent/TW459286B/en not_active IP Right Cessation
- 2000-09-07 CN CN00126361A patent/CN1287380A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1295754C (en) * | 2001-08-27 | 2007-01-17 | 库克有限公司 | Method and system for single ion implantation |
Also Published As
| Publication number | Publication date |
|---|---|
| TW459286B (en) | 2001-10-11 |
| KR100376347B1 (en) | 2003-03-17 |
| JP2001077007A (en) | 2001-03-23 |
| KR20010030289A (en) | 2001-04-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C06 | Publication | ||
| PB01 | Publication | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |