CN1274908A - 具有ic芯片的磁头悬置装配体的制造方法 - Google Patents

具有ic芯片的磁头悬置装配体的制造方法 Download PDF

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CN1274908A
CN1274908A CN00108956A CN00108956A CN1274908A CN 1274908 A CN1274908 A CN 1274908A CN 00108956 A CN00108956 A CN 00108956A CN 00108956 A CN00108956 A CN 00108956A CN 1274908 A CN1274908 A CN 1274908A
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chip
splicing ear
underfilling
projection
ultra
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CN1257487C (zh
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白石一雅
和田健
川合满好
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TDK Corp
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TDK Corp
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    • B23K1/00—Soldering, e.g. brazing, or unsoldering
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Abstract

一种磁头悬置装配体的制造方法,包括:将底层填料设置在IC芯片的安装部位,该芯片具有用于薄膜磁头元件的电路;将IC芯片设置在已敷设的底层填料上;进行IC芯片的超声焊接。

Description

具有IC芯片的磁头悬置装配体的制造方法
本发明涉及一种用于磁盘装置的磁头悬置装配体的制造方法，该装配体包括：滑座，该滑座至少具有一薄膜磁头元件；弹性悬置装置，该装置用于支承滑座和磁头IC芯片。
在这种磁盘装置中，用于对磁盘写入磁信息和/或读取磁信息的薄膜磁头元件，通常是在滑座上制出，该滑座工作过程中在旋转着的磁盘之上掠过。滑座由悬置装置支承，该悬置装置由弹性薄金属片制成，该金属片从磁盘装置之每一可移动臂的一端延伸。
近来，磁盘的记录频率迅速增加以满足当今磁盘装置日益迅速增长的数据存储容量和存储密度的需求。为了实现更高的频率记录，推荐一种磁头悬置装配体装置，该装置具有一种悬置装置，用于支承滑座和磁头元件所用驱动器电路的磁头IC芯片两者。根据这种装置，由于从驱动器电路至磁头元件的导线长度可以缩短，从导线产生的不必要噪声可以有效地遏制，从而导致高频记录特性的改善。
在制造这种磁盘装置中，根据一种传统的方法，每一磁头IC芯片是安装并连接在一连接导体上，该连接导体在悬置装置上用逆流低温焊接(reflow soldering)工艺叩焊芯片(flip chip)焊接制成。在执行逆流低温焊接工艺前，将焊接剂施加在连接导体上，然后将带有低温焊接材料凸球(bump ball)的IC芯片用低温焊接连接。更具体地说，称为C4(Controlled Collapse Chip Connection--受控压平芯片连接)的工艺过程包括下列步骤：(a)焊接剂施加过程，(b)扣焊芯片焊接过程，(c)逆流低温焊接过程，(d)清洗过程，(e)干燥过程，和(f)底层填料的喷射和充填过程，这些步骤是依次执行的。
正如将要指出的，如果扣焊芯片的焊接是使用焊接剂用逆流低温焊接进行，在连接之后需要清洗过程。即，在逆流加热焊接时，焊接剂被施加在悬置装置上焊接IC芯片的部位，以便在逆流低温焊接过程中促进焊料的熔化和将IC芯片临时粘接在悬置装置上。然而，由于所施加的焊接剂可能有例如产生气体之类的不利影响，焊接之后必须清洗。
希望将底层填料填入悬置装置上连接导体和磁头IC芯片间的间隙，以改善热辐射特性、改善此区域的机械强度、并覆盖IC芯片的一部分。然而，这种底层填料的填充必须在清洗步骤之后进行。因此，根据传统的制造方法，在IC芯片焊接在悬置装置的连接导体上，并在随后进行的清洗步骤结束之后，借助于喷射将底层填料充填入连接导体和磁头IC芯片之间的缝隙。
不过，将底层填料通过喷射充填入极窄的缝隙是很困难的，这种缝隙通常为50μm或更小。因此，工作时间和检测时间变长，导致作为整个制造时间中加工处理时间周期变长，也使制造成本进一步增高。
因此，本发明的目的之一在于提供一种磁头悬置装配体的制造方法，以使工作时间和检测时间可以缩短，且检测可以简化。
本发明的另一目的在于提供一种磁头悬置装配体的制造方法，以使制造成本可以降低。
根据本发明，一种磁头悬置装配体的制造方法包括：将底层填料设置在薄膜磁头元件所用具有电路的IC芯片将要安装的部位；将IC芯片放置在所设置的底层填料上；进行IC芯片的超声粘接。
此外，根据本发明提供了一种磁头悬置装配体的制造方法，该装配体包括：磁头滑座，具有至少一薄膜磁头元件；支承件，用于支承磁头滑座；IC芯片，具有用于至少一薄膜磁头元件的电路；导线元件(lead conductor element)，IC芯片焊接在其上；底层填料，充填在IC芯片的底面和导线元件之间的缝隙内。此方法包括：将底层填料设置在导线元件上IC芯片安装的部位；随后，将IC芯片和导线元件用超声焊接。
由于底层填料的充填，可以在IC芯片焊接之前，只通过将底层材料附着而完成，底层填料的充填可极为简单。结果，工作时间和检测时间可以缩短，且检测过程可以简化。于是，制造成本可以降低。
感谢超声焊接，它不需要使抗热应力性能差的IC芯片通过高温逆流炉。因此，磁头悬置装配体成品的可靠性可以改进，磁头悬置装配体的产量也可以提高。此外，由于没有需要很长处理时间的逆流低温焊接过程，工作时间可更为缩短。
此外，不用逆流低温焊接就不需要清洗过程。磁头从磁盘表面掠过时，保持某一空间方位姿态以保证滑座与磁盘表面间极小的缝隙。为保证这种姿态，即使在清洗过程之后，仍能保证每一用于支承滑座的悬置装置成一弯曲角是非常重要的。由于清洗液体喷射或清洗液体超声振动在清洗过程中的作用，不改变悬置装置的弯曲角就难于清洗装配体。然而，根据本发明，由于不进行清洗，上述问题肯定得以消除。
由于没有逆流低温焊接于是也没有焊接剂设置的过程，使得制造过程的步骤更为减少。
在逆流低温焊接中，难于正确控制钎料的融合量，于是IC芯片将借助于自身的重量自由落下而贴靠连接端子。因此，根据传统的方法，不能指望在装配体的焊接尺寸范围内获得足够的稳定性。然而，根据本发明，由于采用超声焊接替代逆流低温焊接，装配体的焊接尺寸范围内的稳定性可通过控制焊接过程能量而大大改善。
由于悬置装置具有片形弹簧结构，悬置装置的弯曲面相对于基准片的安装部倾斜。在逆流低温焊接过程中，由于需要支承以使弯曲面保持水平，以便获得有效的热传导和IC芯片的焊料凸起均匀熔化，必须研究弯曲面的倾斜。然而，根据本发明，借助于采用超声焊接，所需要的是悬置装置的弯曲面为水平，于是，可指望IC芯片的焊接更容易。
推荐导线元件具有在支承元件上制成的第一部分和在延长出支承元件的第二部分，而安装部设置在导线元件的第一部分或第二部分之内。
还推荐本方法还包括超声焊接前在IC芯片的第一连接端子上制成金(Au)或铜(Cu)的凸起(bump)。在此情况下，Au或Cu凸起的制造可能包括用Au或Cu球在第一连接端子上制成Au或Cu凸起。
推荐本方法还包括制成Au或Cu垫片作为第二连接端子，在进行超声焊接前，IC芯片的第一连接端子粘接在第二连接端子上。
还推荐本方法还包括在第二连接端子上制出Au或Cu凸起，在进行超声焊接前，IC芯片的第一连接端子焊接在第二连接端子上。在此情况下，Au或Cu凸起的制造可能包括用Au或Cu球在第二连接端子上制成Au或Cu凸起。
推荐本方法还包括在超声焊接前制成Au或Cu垫片作为IC芯片的第一连接端子。
由于磁头IC芯片的尺寸非常小，凸起球的尺寸必须制成小的，且当采用焊料球并进行逆流低温焊接时，小球之间的间距必须制得大。然而，在本发明中，通过使用Au或Cu球，不仅凸起的尺寸而且凸起的间距均可制成小的。这样，凸起可以很容易制造。较小的凸起间距导致高密度的凸起，因此，芯片的尺寸可更小。
通常，如果焊料中包含大量的Au，焊接强度降低。因此，根据传统采用焊料球的方法，在导线元件中连接端子的Au层必须极薄。然而，通过采用Au球替代焊料球，连接端子Au层的厚度可任意确定。
此外，根据传统采用焊料球的方法，没有控制焊料凸起融合高度的装置，于是IC芯片将落下并由于其自身的重量而趋于倾斜，此重量取决于IC芯片的凸起敷设。然而，本发明通过采用超声焊接Au或Cu球，可以容易地使IC芯片的焊接面保持水平，和控制IC芯片底面至导线连接元件间的距离达到希望的数值。
推荐底层填料的设置包括将底层填料滴至导线元件的安装位置。在此情况下，最好底层填料的下滴这样进行，从而使得所设置的底层填料的中央部具有向上凸起的形状。由于底层填料是滴成具有凸起的形状，当IC芯片被设置在这种形状的底层填料上时，IC芯片底面与导线元件表面间的缝隙被底层填料充填而不形成任何空穴。
本发明的其它目的和优点，从对附图所示本发明推荐实施例的下列说明将一目了然。
图1示出根据本发明磁头悬置装配体推荐实施例的平面视图；
图2a至2d为截面视图，示出根据图1所示实施例磁头悬置装配体制造过程的一部分。
图1原理性地示出作为本发明推荐实施例的磁头悬置装配体。
如图所示，磁头悬置装配体是通过将滑座11固定装配而成，该滑座具有薄膜磁头元件，设置在悬置装置10的顶端部，并通过安装磁头IC芯片12在此悬置装置10的中部。滑座11和磁头IC芯片12均固定在悬置装置10的一个表面，在工作过程中，此悬置装置将面对磁盘表面。悬置装置的这个表面下面称为滑座设置表面。
悬置装置10的构成本质上包括：弹性弯曲元件13，在其舌部接近其顶端部处携带滑座11，并在其中部支承磁头IC芯片12；弹性负载梁14，支承并固定弯曲元件13；和基板15，由负载梁14的基础底面所构成。
负载两14具有弹性，在工作过程中在朝向磁盘的方向用于悬置滑座11。弯曲元件13具有柔性舌，该柔性舌与在负载梁14上制出的陷窝同轴，并具有弹性，以由此舌柔性地支承滑座11。正如将要指出的，在此实施例中，悬置装置10具有三件结构，由单独弯曲元件13、负载梁14和基板15构成。在这种三件结构中，弯曲元件13的刚性设置成低于负载梁14的刚性。
在磁头IC芯片12中，制成构成磁头元件的磁头放大器的集成驱动器电路。尽管只是作为举例，IC芯片的尺寸为1.0mm×1.0mm×0.25mm。在本实施例中，IC芯片12的固定位置的确定使热辐射特性和电磁特性得到改善，并使IC芯片的安装容易。
在本实施例中，弯曲元件13是用厚度大约25μm的不锈钢板(例如SUS304TA)制成。
构成所需数量导线的薄膜布线图案16的导线导体层，在弯曲元件13上沿其长度制成。导体层16的一端(基板15一侧)经过IC芯片12连接至连接端子17，此连接端子将连接至外部电路，而导体层16的另一端连接至在弯曲元件13的顶端部制成的磁头滑座11所用的连接端子。
本实施例的负载梁14用厚度大约65μm的弹性不锈钢片制成，并沿全长支承弯曲元件13。负载梁14具有接近顶端宽度窄的形状。弯曲元件13在负载梁14上的固定是借助于数个焊接点实现的。
基板15用不锈钢或铁制成，并借助于焊接固定在负载梁14的基端部。悬置元件10借助于将基板15的安装部18固定在可动臂上，从而将设置在每一可动臂(未示出)上。
在变形方案中，悬置元件可制成两件结构，该结构具有一基板和一弯曲负载梁以取代具有弯曲元件13、负载梁14和基板15的三件结构。
如上所述，具有磁头元件的滑座11，安装在悬置装置10顶端部弯曲元件13的舌部。包括所需数量导线的导线层16经过滑座11的两端，并在弯曲元件13的顶端部返回至连接端子，从而与滑座11的输入/输出电极电气连接。用树脂制成的绝缘材料层覆盖连接部。
磁头IC芯片12安装在滑座安装表面上，该滑座安装表面设置在悬置元件10长度上的中间部位。在此实施例中，IC芯片12由裸芯片制成，安装在并连接至连接垫片，该垫片在导线层16上制出，该导线层16在悬置元件10的弯曲元件13上穿过绝缘材料层制成。底层填料充填在IC芯片12底面和导线层之间的缝隙中，从而改善热辐射特性、改善此区域的机械强度和覆盖IC芯片12的一部分区域。
下面将参看图2a至2d说明根据本发明之IC芯片12的焊接和底层填料的充填。
如图2a所示，在用不锈钢板制成的弯曲元件13上，薄膜导体布线图案用一种众所周知的方法制造，该方法类似于在薄金属板上制造诸如柔性印刷电路(FPC)的印刷电路板的图案成型法(patterningmethod)。例如，导体布线图案，通过在弯曲元件13上按顺序、依次沉积厚度大约为5μm由树脂例如聚酰亚胺制成的第一层绝缘材料层20、厚度大约为4μm的Cu布线图案层(导体层)21、和厚度大约为5μm的由树脂例如聚酰亚胺制成的第二层绝缘材料层22。在连接端子至磁头滑座和至外部电路的区域，以及连接垫片23至IC芯片12区域，在Cu层上沉积一Au层24，在Au层24上没有第二绝缘层。
然后，如图2a所示，用于改善热辐射特性、改善该区域机械强度和覆盖IC芯片12一部分的液态底层填料25，被滴上并附着环绕在薄膜导体布线图案的连接垫片23部位。底层材料25是良好的热传导材料，例如用树脂诸如环氧树脂和具有良好导热性能的绝缘材料的混合物。希望所设置的底层填料25的中央部具有向上凸起的形状。感谢所设置底层材料的这种凸起形状，当IC芯片设置在底层填料25上并向下推时，在IC芯片的底面和薄膜导体布线图案间的缝隙内没有空腔。
构成底层填料层25的具有良好热传导性的底层填料树脂，例如可为：含有融合硅(fused silica)的环氧树脂(导热率大约为12×10-4卡/厘米·秒·度)；含有铝的树脂(导热率大约为40×10-4卡/厘米·秒·度)；含有晶体硅的树脂(导热率大约为35×10-4卡/厘米·秒·度)或含有氮化铝的树脂(导热率大约为40×10-4卡/厘米·秒·度)。
如图2b所示，Au球凸起26预先在连接垫片(未示出)上制成，该垫片在IC芯片12的底面制成。IC芯片12被超声焊接头27拾取，该超声头贴靠IC芯片的顶面如图2b所示，并对准薄膜导体布线图案的连接垫片23。
然后，如图2c所示，IC芯片12被沿箭头28所示方向下压以挤压所设置的底层填料25，直至IC芯片12的Au球凸起26贴靠在薄膜导体布线图案的连接垫片23，沿箭头29方向(横向)的超声振动由超声头27施加。
具有恒定压力(负载)的下压和超声振动的应用，导致IC芯片12的Au球凸起与连接垫片23的Au层24的融合焊接。
于是，如图2d所示，不仅IC芯片12的连接端子和连接垫片的连接得以实现，而且IC芯片12底面和薄膜导体布线图案间的缝隙完全充填以底层填料25却不形成任何空腔。底层填料25在随后的加热和干燥过程中固化。由于底层填料25是滴上的，于是具有凸起形状。而IC芯片12下压具有此形状的底层填料25，在IC芯片12和薄膜导体布线图案表面间的缝隙完全填充以底层填料而不形成任何空腔。
根据此实施例，由于IC芯片12的Au球凸起26与连接垫片23的Au层24是由超声融合焊接而电气和机械连接，既不需要临时固定IC芯片，也不需要逆流低温焊接。此外，由于进行超声和压缩焊接，底层填料25的充填过程可在IC芯片焊接之前进行。如前所指出，在传统的方法中底层填料的充填只能在逆流低温焊接和清洗过程结束后进行。因此，通过喷射进行困难的底层填料充填必须实施，而且需要在逆流低温焊接过程后重新加热。此外，为了缩短机器处理时间，现有的底层填料材料受到限制。然而，根据本实施例，由于采用使用Au球凸起的超声焊接，可以将底层填料设置在焊接IC芯片的悬置元件的一部分上。因此，底层填料所用树脂选择和处理过程设计的柔性增加了，并可指望大大缩短机器处理的时间。
此外，根据本实施例，既不需要焊料焊剂的输送过程也不需要逆流低温焊焊接的过程，因此也不需要清洗过程。此外，由于可在IC芯片焊接之前充填底层填料，底层填料的充填过程可极为简单。结果，不仅机器处理时间可以极短，而且制造磁头悬置装配体的质量可大大提高。
在上述实施例中，IC芯片12的Au球凸起26和连接垫片的Au层24是通过超声焊接的。不过，本发明可通过将Cu球凸起和Cu层进行超声焊接，或用另一金属球和另一金属层取代Au球和Au层而实现。在修改方案中，凸起可在薄膜导体布线图案的连接垫片上形成。
本发明可建造出许多不同的实施例，而不超出本发明的精神和范围。应当理解本发明并不局限于在此所说明的具体实施例，而是由所附权利要求所限定。

Claims (20)

1.一种磁头悬置装配体的制造方法，该方法包括下列步骤：
将底层填料设置在将要安装IC芯片的部位，该芯片具有用于薄膜磁头元件的电路；
将所述IC芯片设置在所设置的底层填料上；和
进行所述IC芯片的超声焊接。
2.如权利要求1所述的方法，其中，所述方法还包括，在所述超声焊接前，在所述IC芯片的第一连接端子上制成Au或Cu凸起。
3.如权利要求2所述的方法，其中，所述制成Au或Cu凸起的步骤包括在所述第一连接端子上使用Au或Cu球制成Au或Cu凸起。
4.如权利要求2所述的方法，其中，所述方法还包括在所述超声焊接前，制成Au或Cu垫片作为第二连接端子的步骤，所述IC芯片的所述第一连接端子焊接在该第二连接端子上。
5.如权利要求1所述的方法，其中，所述方法还包括在所述超声焊接前，在第二连接端子上制成Au或Cu凸起的步骤，所述IC芯片的第一端子焊接在该第二连接端子上。
6.如权利要求5所述的方法，其中，所述制成Au或Cu凸起的步骤包括在所述第二连接端子上用Au或Cu球制成Au或Cu凸起。
7.如权利要求5所述的方法，其中，所述方法还包括在所述超声焊接前，制成Au或Cu垫片作为所述IC芯片的所述第一连接端子。
8.如权利要求1所述的方法，其中，所述底层填料的设置步骤包括将底层填料滴在所述IC芯片将要安装的部位。
9.如权利要求8所述的方法，其中，所述滴底层填料的执行，应使所设置的底层填料的中央部具有向上凸起的上部。
10.一种磁头悬置装配体的制造方法，该装配体包括：一磁头滑座，该滑座具有至少一薄膜磁头元件；支承元件，用于支承所述磁头滑座；IC芯片，该芯片具有电路，用于所述至少一薄膜磁头元件；导线元件，所述IC芯片焊接在其上；和底层填料，充填在所述IC芯片底面和所述导线元件间缝隙中，所述方法包括下列步骤：
将底层填料设置在所述导线元件上之所述IC芯片安装部位；和
随后，对所述IC芯片和所述导线元件进行超声焊接。
11.如权利要求10所述的方法，其中，所述导线元件具有在所述支承元件上制成的第一部和延伸出所述支承元件的第二部，其中，所述安装位置处于所述导线元件的所述第一部内。
12.如权利要求10所述的方法，其中，所述导线元件具有在所述支承元件上制成的第一部和延伸出所述支承元件的第二部，其中，所述安装位置处于所述导线元件的所述第二部内。
13.如权利要求10所述的方法，其中，所述方法还包括在所述超声焊接前，在所述IC芯片的第一连接端子制成Au或Cu凸起的步骤。
14.如权利要求13所述的方法，其中，所述制成Au或Cu凸起的步骤还包括在所述第一连接端子上用Au或Cu球制成Au或Cu凸起。
15.如权利要求13所述的方法，其中，所述所述方法还包括在所述超声焊接前，制成Au或Cu垫片作为第二连接端子的步骤，所述IC芯片的所述第一连接端子焊接在该第二连接端子上。
16.如权利要求10所述的方法，其中，所述方法还包括在超声焊接前，在第二连接端子上制成Au或Cu凸起的步骤，所述IC芯片的第一端子焊接在该第二连接端子上。
17.如权利要求16所述的方法，其中，所述制成Au或Cu凸起的步骤包括在所述第二连接端子上用Au或Cu球制成Au或Cu凸起。
18.如权利要求16所述的方法，其中，所述方法还包括在所述超声焊接前，制成Au或Cu垫片作为所述IC芯片的所述第一连接端子。
19.如权利要求10所述的方法，其中，所述底层填料的设置步骤包括将底层填料滴在所述导线元件的所述安装部位。
20.如权利要求19所述的方法，其中，所述滴底层填料的执行，应使所设置的底层填料的中央部具有向上凸起的上部。
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