CN1271945A - 非易失性半导体存储器 - Google Patents
非易失性半导体存储器 Download PDFInfo
- Publication number
- CN1271945A CN1271945A CN00106110A CN00106110A CN1271945A CN 1271945 A CN1271945 A CN 1271945A CN 00106110 A CN00106110 A CN 00106110A CN 00106110 A CN00106110 A CN 00106110A CN 1271945 A CN1271945 A CN 1271945A
- Authority
- CN
- China
- Prior art keywords
- circuit
- channel transistor
- drain electrode
- timing signal
- bit line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/24—Bit-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
- G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/32—Timing circuits
Landscapes
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
Description
Claims (15)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP118853/1999 | 1999-04-26 | ||
JP11885399A JP3471251B2 (ja) | 1999-04-26 | 1999-04-26 | 不揮発性半導体記憶装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1271945A true CN1271945A (zh) | 2000-11-01 |
CN1118070C CN1118070C (zh) | 2003-08-13 |
Family
ID=14746769
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN00106110A Expired - Fee Related CN1118070C (zh) | 1999-04-26 | 2000-04-25 | 非易失性半导体存储器 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6191978B1 (zh) |
EP (1) | EP1049102A3 (zh) |
JP (1) | JP3471251B2 (zh) |
KR (1) | KR100342630B1 (zh) |
CN (1) | CN1118070C (zh) |
TW (1) | TW514924B (zh) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7453729B2 (en) | 2001-02-22 | 2008-11-18 | Samsung Electronics Co., Ltd. | Bit line setup and discharge circuit for programming non-volatile memory |
CN101441894A (zh) * | 2007-11-15 | 2009-05-27 | 松下电器产业株式会社 | 半导体非易失性存储器 |
CN101266838B (zh) * | 2007-03-14 | 2011-03-16 | 海力士半导体有限公司 | 在非易失性存储器件中读取数据的方法 |
CN1811988B (zh) * | 2005-01-25 | 2012-05-30 | 三星电子株式会社 | 存储单元阵列偏置方法以及半导体存储器件 |
CN103247334A (zh) * | 2013-04-24 | 2013-08-14 | 上海宏力半导体制造有限公司 | 存储器及其列译码电路 |
CN103871472A (zh) * | 2012-12-12 | 2014-06-18 | 上海华虹宏力半导体制造有限公司 | 存储器的列地址译码电路 |
CN104821181A (zh) * | 2014-01-31 | 2015-08-05 | 台湾积体电路制造股份有限公司 | 多次可编程存储器 |
CN107464580A (zh) * | 2016-06-03 | 2017-12-12 | 中芯国际集成电路制造(上海)有限公司 | 高速预充电敏感放大器电路、快速读取电路及电子装置 |
CN110718259A (zh) * | 2018-07-13 | 2020-01-21 | 西安格易安创集成电路有限公司 | 一种非易失存储器检测电路及检测方法 |
CN111009276A (zh) * | 2018-10-04 | 2020-04-14 | 三星电子株式会社 | 非易失性存储器器件的感测电路和操作方法 |
CN113345492A (zh) * | 2020-02-18 | 2021-09-03 | 爱思开海力士有限公司 | 电压发生电路和使用该电压发生电路的非易失性存储装置 |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3789241B2 (ja) * | 1998-12-01 | 2006-06-21 | Necエレクトロニクス株式会社 | バイアス回路及び半導体記憶装置 |
US6462998B1 (en) * | 1999-02-13 | 2002-10-08 | Integrated Device Technology, Inc. | Programmable and electrically configurable latch timing circuit |
US6356485B1 (en) * | 1999-02-13 | 2002-03-12 | Integrated Device Technology, Inc. | Merging write cycles by comparing at least a portion of the respective write cycle addresses |
US7177181B1 (en) | 2001-03-21 | 2007-02-13 | Sandisk 3D Llc | Current sensing method and apparatus particularly useful for a memory array of cells having diode-like characteristics |
JP3959270B2 (ja) * | 2001-12-26 | 2007-08-15 | 株式会社東芝 | 半導体集積回路装置及びその読み出し開始トリガ信号発生方法 |
US7324394B1 (en) | 2002-08-01 | 2008-01-29 | T-Ram Semiconductor, Inc. | Single data line sensing scheme for TCCT-based memory cells |
US6903987B2 (en) | 2002-08-01 | 2005-06-07 | T-Ram, Inc. | Single data line sensing scheme for TCCT-based memory cells |
CN100351947C (zh) * | 2003-01-17 | 2007-11-28 | 华邦电子股份有限公司 | 双相预充电电路及其组合的消除漏泄电流电路 |
JP2005190626A (ja) * | 2003-12-26 | 2005-07-14 | Sharp Corp | 半導体読み出し回路 |
WO2005106892A1 (en) * | 2004-04-21 | 2005-11-10 | Micron Technology, Inc. | Sense amplifier for a non-volatile memory device |
ITRM20040199A1 (it) | 2004-04-21 | 2004-07-21 | Micron Technology Inc | Amplificatore di rilevazione per un dispositivo di memoria non volatile. |
US7960997B2 (en) * | 2007-08-08 | 2011-06-14 | Advanced Analogic Technologies, Inc. | Cascode current sensor for discrete power semiconductor devices |
JP2009252275A (ja) * | 2008-04-03 | 2009-10-29 | Nec Electronics Corp | 半導体記憶装置 |
IT1401091B1 (it) | 2010-06-15 | 2013-07-12 | St Microelectronics Srl | Circuito di lettura di celle di memoria non volatili e sistema di memoria comprendente il circuito |
US9378814B2 (en) * | 2013-05-21 | 2016-06-28 | Sandisk Technologies Inc. | Sense amplifier local feedback to control bit line voltage |
KR102571192B1 (ko) * | 2016-08-29 | 2023-08-28 | 에스케이하이닉스 주식회사 | 센스 앰프, 이를 포함하는 비휘발성 메모리 장치 및 시스템 |
DE102019103746A1 (de) | 2018-03-16 | 2019-09-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Speicher-Leseverstärker mit Vorladung |
US10755780B2 (en) | 2018-03-16 | 2020-08-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory sense amplifier with precharge |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR910007434B1 (ko) * | 1988-12-15 | 1991-09-26 | 삼성전자 주식회사 | 전기적으로 소거 및 프로그램 가능한 반도체 메모리장치 및 그 소거 및 프로그램 방법 |
JPH02285593A (ja) | 1989-04-26 | 1990-11-22 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置 |
US5113373A (en) * | 1990-08-06 | 1992-05-12 | Advanced Micro Devices, Inc. | Power control circuit |
JP3478917B2 (ja) * | 1995-12-20 | 2003-12-15 | 株式会社日立製作所 | センスアンプ回路 |
KR100240418B1 (ko) * | 1996-12-31 | 2000-03-02 | 윤종용 | 반도체 독출 전용 메모리 및 그의 독출 방법 |
-
1999
- 1999-04-26 JP JP11885399A patent/JP3471251B2/ja not_active Expired - Fee Related
-
2000
- 2000-04-20 US US09/553,880 patent/US6191978B1/en not_active Expired - Lifetime
- 2000-04-21 TW TW089107562A patent/TW514924B/zh not_active IP Right Cessation
- 2000-04-25 CN CN00106110A patent/CN1118070C/zh not_active Expired - Fee Related
- 2000-04-25 KR KR1020000021824A patent/KR100342630B1/ko not_active IP Right Cessation
- 2000-04-26 EP EP00108841A patent/EP1049102A3/en not_active Withdrawn
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7835191B2 (en) | 2001-02-22 | 2010-11-16 | Samsung Electronics Co., Ltd. | Bit line setup and discharge circuit for programming non-volatile memory |
US7453729B2 (en) | 2001-02-22 | 2008-11-18 | Samsung Electronics Co., Ltd. | Bit line setup and discharge circuit for programming non-volatile memory |
CN1811988B (zh) * | 2005-01-25 | 2012-05-30 | 三星电子株式会社 | 存储单元阵列偏置方法以及半导体存储器件 |
CN101266838B (zh) * | 2007-03-14 | 2011-03-16 | 海力士半导体有限公司 | 在非易失性存储器件中读取数据的方法 |
CN101441894A (zh) * | 2007-11-15 | 2009-05-27 | 松下电器产业株式会社 | 半导体非易失性存储器 |
CN103871472A (zh) * | 2012-12-12 | 2014-06-18 | 上海华虹宏力半导体制造有限公司 | 存储器的列地址译码电路 |
CN103247334B (zh) * | 2013-04-24 | 2017-02-08 | 上海华虹宏力半导体制造有限公司 | 存储器及其列译码电路 |
CN103247334A (zh) * | 2013-04-24 | 2013-08-14 | 上海宏力半导体制造有限公司 | 存储器及其列译码电路 |
CN104821181A (zh) * | 2014-01-31 | 2015-08-05 | 台湾积体电路制造股份有限公司 | 多次可编程存储器 |
CN104821181B (zh) * | 2014-01-31 | 2019-07-19 | 台湾积体电路制造股份有限公司 | 多次可编程存储器 |
CN107464580A (zh) * | 2016-06-03 | 2017-12-12 | 中芯国际集成电路制造(上海)有限公司 | 高速预充电敏感放大器电路、快速读取电路及电子装置 |
CN107464580B (zh) * | 2016-06-03 | 2020-06-05 | 中芯国际集成电路制造(上海)有限公司 | 高速预充电敏感放大器电路、快速读取电路及电子装置 |
CN110718259A (zh) * | 2018-07-13 | 2020-01-21 | 西安格易安创集成电路有限公司 | 一种非易失存储器检测电路及检测方法 |
CN110718259B (zh) * | 2018-07-13 | 2021-08-20 | 西安格易安创集成电路有限公司 | 一种非易失存储器检测电路及检测方法 |
CN111009276A (zh) * | 2018-10-04 | 2020-04-14 | 三星电子株式会社 | 非易失性存储器器件的感测电路和操作方法 |
CN111009276B (zh) * | 2018-10-04 | 2024-06-11 | 三星电子株式会社 | 非易失性存储器器件的感测电路和操作方法 |
CN113345492A (zh) * | 2020-02-18 | 2021-09-03 | 爱思开海力士有限公司 | 电压发生电路和使用该电压发生电路的非易失性存储装置 |
CN113345492B (zh) * | 2020-02-18 | 2024-03-08 | 爱思开海力士有限公司 | 电压发生电路和使用该电压发生电路的非易失性存储装置 |
Also Published As
Publication number | Publication date |
---|---|
KR20000071800A (ko) | 2000-11-25 |
KR100342630B1 (ko) | 2002-06-28 |
US6191978B1 (en) | 2001-02-20 |
TW514924B (en) | 2002-12-21 |
EP1049102A3 (en) | 2002-05-08 |
EP1049102A2 (en) | 2000-11-02 |
CN1118070C (zh) | 2003-08-13 |
JP3471251B2 (ja) | 2003-12-02 |
JP2000311493A (ja) | 2000-11-07 |
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Legal Events
Date | Code | Title | Description |
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C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C06 | Publication | ||
PB01 | Publication | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: NEC ELECTRONICS TAIWAN LTD. Free format text: FORMER OWNER: NIPPON ELECTRIC CO., LTD. Effective date: 20030910 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20030910 Patentee after: NEC Corp. Patentee before: NEC Corp. |
|
C56 | Change in the name or address of the patentee |
Owner name: RENESAS ELECTRONICS CORPORATION Free format text: FORMER NAME: NEC CORP. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Kanagawa, Japan Patentee after: Renesas Electronics Corporation Address before: Kanagawa, Japan Patentee before: NEC Corp. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20030813 Termination date: 20160425 |