CN1264219A - 表面声波装置及其制造方法 - Google Patents

表面声波装置及其制造方法 Download PDF

Info

Publication number
CN1264219A
CN1264219A CN00102358A CN00102358A CN1264219A CN 1264219 A CN1264219 A CN 1264219A CN 00102358 A CN00102358 A CN 00102358A CN 00102358 A CN00102358 A CN 00102358A CN 1264219 A CN1264219 A CN 1264219A
Authority
CN
China
Prior art keywords
acoustic wave
surface acoustic
hole
wave device
connection electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN00102358A
Other languages
English (en)
Inventor
渋谷诚
冬爪敏之
岩佐进吾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Publication of CN1264219A publication Critical patent/CN1264219A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02535Details of surface acoustic wave devices
    • H03H9/02818Means for compensation or elimination of undesirable effects
    • H03H9/02897Means for compensation or elimination of undesirable effects of strain or mechanical damage, e.g. strain due to bending influence
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/125Driving means, e.g. electrodes, coils
    • H03H9/145Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/03Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/05Holders; Supports
    • H03H9/058Holders; Supports for surface acoustic wave devices
    • H03H9/0585Holders; Supports for surface acoustic wave devices consisting of an adhesive layer
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/05Holders; Supports
    • H03H9/10Mounting in enclosures
    • H03H9/1064Mounting in enclosures for surface acoustic wave [SAW] devices
    • H03H9/1071Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the SAW device
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/25Constructional features of resonators using surface acoustic waves
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0555Shape
    • H01L2224/05556Shape in side view
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05599Material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05599Material
    • H01L2224/056Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624Aluminium [Al] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399Material
    • H01L2224/854Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85417Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/85424Aluminium (Al) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01014Silicon [Si]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01022Titanium [Ti]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01027Cobalt [Co]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/014Solder alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12041LED
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/1515Shape
    • H01L2924/15153Shape the die mounting substrate comprising a recess for hosting the device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/15165Monolayer substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16195Flat cap [not enclosing an internal cavity]

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Wire Bonding (AREA)

Abstract

本发明提供了一种表面声波装置,包括一个含有元件安装表面的组件,一个组件中配置的有至少一个连接电极的表面声波元件,一种粘合剂以便将表面声波元件固定到组件的元件安装表面,和至少一个连接到至少一个连接电极的连接线。至少一个连接电极有至少一个线型通孔延伸穿过一个区域,该区域中至少一个连接线被连接到至少一个连接电极。

Description

表面声波装置及其制造方法
本发明涉及一种表面声波装置及其制造方法,该装置用作表面声波谐振器或表面声波滤波器。本发明尤其涉及一种具有连接电极的表面声波装置及其制造方法,该电极通过金属线接合法连接了一根连接线。
在表面声波装置的制造中,一种结构经常被用来封焊组件中的表面声波元件。(例如,参考第50-68058号、第51-17666号、第61-172362号日本未审查专利,)
为了将表面声波元件安装到组件中,下面的方法被用于表面声波装置的装配。首先,准备表面声波元件,在该元件中的表面声波基片上提供至少一个叉指式换能器(在下文中,被称为IDT)和一个电气地连接到外界的连接电极。将这个表面声波元件用粘合剂固定在一个组件成员的元件固定表面上。然后,利用超声波振荡,通过金属线接合法,终端电极被连接到表面声波元件的连接电极,该终端电极将被电气地连接到组件成员外部。那就是说,在施加超声波的同时,连接线被连接到连接电极上,并且通过相似地施加超声波振荡的金属线接合法,连接线的另一端被连接到组件成员提供的终端电极上。
当用上述连接线连接完毕以后,安排来焊封表面声波元件的另一个组件成员被固定到这个组件成员以便完成该表面声波装置。
在构造表面声波装置来放置组件中的表面声波元件时,使用粘合剂把表面声波元件固定到组件成员的元件安装面。然而,在凝固过程中上述的粘合剂会收缩,并且由于凝固中的这种收缩,应力会被施加到表面声波元件中。如此会产生一个问题,由于凝固中的这种收缩,表面声波装置的特性会变化。
特别地,上述凝固收缩产生的应力也随着操作环境或大气的变化而变化,因此,在使用和操作过程中表面声波装置的特性会变化。
另一方面,当应变在表面声波元件所固定的组件中产生时,应变通过上述的粘合剂施加在表面声波元件中。当上述的应力被施加时,表面声波元件的特性会变化。那就是说,存在一个问题,即应力的变化导致了表面声波装置特性的变化,表面声波装置的成品率也随之降低。
为了克服上述的问题,本发明的较佳实施例提供了表面声波装置及其制造方法,它可以使施加在表面声波元件上的应力和组件中产生的应变影响最小,该应力是用于固定表面声波元件的粘合剂在凝固过程中由于收缩产生的,如此可以消除装置特性中的变化,并且可以获得极佳的连接可靠性。
根据本发明的一个较佳实施例,一个表面声波装置包括一个有元件安装面的组件,一个在组件中提供并含有至少一个连接电极的表面声波元件,一种粘合剂以便将表面声波元件固定到组件的元件安装表面,并且至少一个连接线连接到至少一个连接电极,其中至少一个连接电极有至少一个线型通孔延伸穿过一个区域,该区域中至少一个连接线被连接到至少一个连接电极。
根据这个较佳实施例的表面声波装置,将表面声波元件通过软粘合剂层固定在组件的元件安装面,粘合剂的凝固收缩造成的应力、加在组件上的应变和其他的力不再传递到表面声波元件。如此,元件特性上的变化降到了最低,表面声波元件的合格率大大提高。
在凝固状态,粘合剂较适宜有80HSD或更低的肖氏硬度,可以用改良的环氧树脂胶或硅树脂胶。
此外,因为线型通孔在上述连接电极中形成,通过开始连接时连接线在通孔的***边缘部分的滑动,连接电极表面上的氧化物薄膜首先被去除,并且当使用超声导线连接法的时候,连接表面也沿着超声振动的方向延伸了。由此,连接线到连接电极的连接强度和连接可靠性大大增加了。
此外,通孔是线形的,在导电薄膜形成以后通孔可以通过刻蚀容易地形成。由此,通孔可以容易地形成而无须增加通孔的面积,并且防止了由于通孔的形成而造成的连接电极连接面积的减少。因为防止了对连接电极到连接线的连接性能有贡献的面积的减少,连接强度和连接可靠性也增加了。
线型通孔可能有一种形状,该形状结合了复杂线形部分。例如,线型通孔可能有一个锯齿形状或交叉形状。
当许多线形部分被组合到上述的线型通孔中的情况下,相对于直通孔的情况,在连接线滑动的方向上,氧化物薄膜首先被除去的边缘部分的数目增加了,因此,连接线到连接电极的连接可靠性进一步增强了。
根据本发明的另一个较佳实施例,制造表面声波装置的方法包括以下步骤:准备表面声波基片,刻蚀导电薄膜以便形成至少一个叉指式换能器和一个有线型通孔的连接电极,用粘合剂把表面声波元件固定到组件的元件安装面上;并且通过超声波金属线连接法把连接线连接到连接电极上。
在这个较佳实施例的表面声波装置制造方法中,在导电薄膜在表面声波基片上形成以后,至少刻蚀了一个IDT和有线型通孔的连接电极。因此,在IDT形成过程中,上述线型通孔可以被同步地形成,并且无需增加任何额外的处理步骤就可以容易地准备本发明中的表面声波装置。如此,无需增加时间、成本和制造过程的难度就可以获得本发明较佳实施例的表面声波装置。
为了说明本发明,图中显示了一些目前认为较好的实施例,不过本发明并没有限制为所示的精确安排和手段。
图1A和1B是用于解释在表面声波装置中把连接线连接到连接电极过程的剖视图。
图2是一个用于根据本发明的一个较佳实施例的表面声波装置的表面声波元件的平面图。
图3是一个根据本发明的一个较佳实施例的表面声波装置的剖视图。
图4A和4B是用于解释线型通孔改良平面图。
在下文中,参考附图详细解释本发明的较佳实施例。
本发明的发明者发现,如果在把表面声波元件固定到一个组件的元件安装面过程中使用软性粘合剂,加在表面声波元件上的上述应力可以被最小化。这种软性粘合剂凝固以后会有一种柔韧性。这种软性粘合剂最好包括,例如,改良的环氧树脂胶或硅树脂胶。更明确地说,在凝固状态,根据JIS(日本工业标准)Z2246-1992,软性粘合剂最好有80HSD或更低的肖氏硬度。
使用上述软性粘合剂,通过把表面声波元件固定到组件的元件安装面,由于凝固收缩导致的应力大大减少了,并且由于施加到组件或表面声波元件上的应变而导致的应力传播也被降至最低。如此,依照本发明的较佳实施例,表面声波装置的特性波动被大大减少了。
然而,如果使用了上述的软性粘合剂,在金属线连接过程中,当施加超声波的时候,超声能会被软性粘合剂层吸收。
这里有一个问题,在传统装置中,连接线与连接电极之间的连接性能是递降的。
人们发现,为了提高连接线与连接电极之间的连接性能,可以在连接电极中制造一个通孔。参考图示1A和1B描述了这一点。
依照本发明的较佳实施例,参考图示1A和1B是表面声波装置中用于解释把连接线连接到有通孔的连接电极过程的剖视图,该过程中使用了超声波。
如图1A所示,一个连接电极53被装配在表面声波元件51的表面声波基片52上。连接电极53最好有多个的通孔53a。通过施加超声波,连接线54被连接到连接电极53。
在这个情况中,如图1A所示,当施加超声波的时候,连接线54发生震动,结果连接线54在连接电极53上沿箭头A的方向滑动。连接电极53通常包括基体金属如铝。如此,连接电极53的表面被覆盖了一层氧化物薄膜。
为了连接导线54,必须要去除氧化物薄膜。在超声导线连接方法中超声震荡被施加到连接线54,并且如上所述通过允许连接线54在连接电极53上滑动去除了氧化物薄膜,但是当使用软性粘合剂固定表面声波元件时,表面声波元件相对于超声振动以同频方式震动。结果连接线和连接电极之间的滑动不充分,并且氧化物薄膜不能被去除到连接所必需的程度。
另一方面,当连接电极53有一个通孔53a在那里形成,如图2A所示,一旦导线连接开始,在连接电极53中通孔53a的周围边缘部分,即边缘部分53b,通过连接线54的滑动会容易地塑性变形,并且边缘部分的氧化物薄膜首先破裂。如此,以边缘点为基点,沿着超声振动的方向,连接表面延伸了。而且如图1B所示,具有了突起B,连接线54可靠地连接到形成巨大连接表面的连接电极53上。
那就是说,通过在连接电极53中形成通孔,连接线54可以被很好很安全地连接。
同样地,当金属薄膜在表面声波基片上形成以后,上述的通孔53可以在IDT图案形成或蚀刻过程或其他相似形成过程的同时形成。
在内部有一个通孔53a的连接电极中,通孔的易加工性反比与连接电极53的面积。
那就是说,当通孔53a通过蚀刻产生时,随着孔的减小,通孔53a的确实形成会越来越困难。
另一方面,如果通孔53a的面积是大的,通孔53a可以通过刻蚀容易地形成,但是连接电极53的面积被大大减小了。当连接电极53的面积减小时,不能确保一个充分的连接面积,并且连接强度和连接可靠性也降低了。另外,表面声波基片到连接电极53的粘附面积也减少了,并且表面声波基片52到连接电极53的粘附强度降低,问题也随之发生。
发明者认真地检查和思考了这些结构,它们使连接电极和连接线之间能够达到足够的连接强度,并且使用软性粘合剂和有通孔的电极在表面声波装置中容易地产生通孔,结果完成了本发明。那就是说,本发明的特征是,通过提供上述的线形的通孔,通孔的易加工性大大提高了并且连接电极的面积更大更充分。
正如上文所解释的,以超声振动的方向为起点,连接电极和连接线之间的连接表面沿着超声振动的方向延伸。
因此,较佳的方法是,一个通孔沿着超声振动的方向配备许多边缘部分或者沿着超声振动的方向在连接电极上配备多个的通孔,如此连接线可以被快速而牢固地连接到连接电极。此外,连接电极和连接线之间的连接实施时不管超声振动的方向,如此较为有利。例如,通孔最好有一个锯齿状配置的线形模式,或者在连接电极上的不同方向配置多个的线型通孔。
连接电极上通孔的尺寸没有限定特别的长宽。不过通孔的宽度最好在大约0.2μm到20μm的范围内。
图1A和1B是表面声波元件的平面图,该元件用在本发明第一个较佳实施例的表面声波装置中。
表面声波元件1最好包括一个大致五矩形的表面声波基片2。表面声波基片2可以由压电基片组成,例如,诸如钛酸铅锆酸盐陶瓷之类的压电陶瓷,或者诸如LiNbO3,LiTaO3之类的压电单晶或石英。另一种选择是,表面声波基片2可以包括一个压电薄膜,例如绝缘基片(例如铝土)上的ZnO。
在这个较佳实施例中,两个IDT3、4被布置在表面声波基片2的上表面,如此构成一个表面声波滤波器。IDT3、4分别配备了一对梳状电极3a、3b、4a、4b。IDT3中,梳状电极的电极齿3a和梳状电极的电极齿3b同样地,IDT4中,梳状电极的电极齿4a和梳状电极的电极齿4b也被排列成相互交叉的样子。
连接电极5在梳状电极3a上连续地形成。同样地,连接电极6-8也分别在梳状电极3b、4a、4b上连续地形成。
连接电极5-8将表面声波元件1电气地连接到外部元件,并且驱动表面声波元件1。
多个线型通孔5a-8a布置在连接电极5-8上。在这个较佳实施例中,线型通孔5a最好有一个沿大致的矩形连接电极5-8的对角线方向或与对角线方向平行的方向锯齿状延伸的配置。
然而,正如下面所描述的,线型通孔5a-8a的形状无需如此限制,可以有其他的形状。
IDT3、4和连接电极5-8可以通过准备表面声波基片2来形成,在表面声波基片2上形成一层由铝或类似物质构成的导电连续薄膜,然后,刻蚀该导电连续薄膜。那就是说,无需增加制造过程的步骤,通孔5a-8a就可以与连接电极5-8以及IDTs3、4同时形成。
本较佳实施例的表面声波装置制造方法中,由上述方法得到的表面声波元件1被置于组件9中,如图3所示。在组件9的上表面配置有凹陷部分10a和第一个组件成员10,该组件成员10包括含薄板状环绕凹陷部分10a的框架定位片16、17。组件成员10的凹陷部分10a的下表面构成了一个元件安装表面10b。上述表面声波元件1通过软性粘合剂层11被固定在这个元件安装表面上。粘合剂确定的软性粘合剂层11最好包括上述改良环氧树脂胶,硅树脂胶或其他合适的材料。因为软性粘合剂层11是由主要包括上述软性树脂的粘合剂组成的,在树脂固化过程中的收缩应力将被软性粘合剂层11自身所吸收,并且防止了源自固化收缩的应力加到表面声波元件T上。此外,因为当应变被加到组件成员10时应变也会被软性粘合剂层11所吸收,由上述施加到表面声波元件1的应变所引起的应力的传播被降至最小,即使当应变不仅仅加到组件10而且也加到组件的其他部分和区域的时候也一样。如此,我们可以获得几乎没有元件特性变化的表面声波装置。
在表面声波元件1被用软性粘合剂层11固定以后,表面声波元件1被连接到组件成员10的终端电极上。
在图3中,只有连接电极5-8中的连接电极5、6被图示出来。这里,通过连接线12、13,连接的电极5、6被连接到组件成员10所配置的终端电极14、15上。终端电14、15由合适的导电材料如铝制成,并且被设计成从组件成员10的上表面10c延伸到外表面10d,10e。
在用导线连接法连接时,通过把连接线12、13的每一端连接到连接电极5、6来完成连接,同时在那里加上超声震荡。在此例中,示于图1的上述线型通孔5a、6a在连接电极5、6中形成,不过他们没有显示在图3中。如此,类似于图2所示的导线连接过程,以线型通孔5a、6a的***边缘的边缘部分作为起点,连接电极5、6的氧化物薄膜也被去除了,连接线12、13被连接到连接电极5、6,并且连接表面沿着超声振动的方向延伸。如此,连接线12、13被安全可靠地连接到连接电极5、6。
另一方面,通过超声导线连接法,将连接线12、13的另一个端头同样地连接到终端电极14、15。上述通孔,最好是线型通孔,也可以在终端电极14、15中形成。结果,终端电极14、15到连接线12、13的连接可靠性也大大增强了。
此外,通过图中没有显示的连接线,连接电极7、8也类似地被连接到终端电极(未被显示)。
在通过连接线12、13的连接结束后,盖子18被固定到定位片17的上表面,以便覆盖组件成员10的上部开口。表面声波装置19如此被完成。
在表面声波装置19中,在本发明较佳实施例中第二个组件成员由上述的盖子18组成,并且,通过把第二个组件成员固定到第一个组件成员10,表面声波元件1也被密封到组件9的内部。
此外,因为终端电极14、15被引导到这个组件9的外表面,也就是,第一个组件成员10的端面,这个组件可以用终端电极14、15电气地连接到外部元件,并且内部的表面声波元件1也可以被驱动了。
如上所述,在这个较佳实施例中,通过软性粘合剂层11,表面声波元件1被固定到组件成员10,并且表面声波装置19在元件特性上几乎没有变化。此外,线型通孔5a-8a在连接电极5-8中形成,如此,连接线12、13到连接电极5、6的连接可靠性大大增加了。
此外,上述线型通孔5a-8a最好有一个线形配置,并且,相对于形成小直径圆形通孔的情况,通孔5a-8a可以在刻蚀上述导电连续薄膜的过程中容易地形成。那就是说,利用刻蚀过程中刻蚀剂的流动性,可以容易而且准确地生成线型通孔5a-8a。
如此,即使在通孔5a-8a的面积不是大大增加的时候,通孔5a-8a也可以容易地形成,连接电极5-8到连接线的连接面积也没有减少。如此,连接电极5a-8a到连接线12、13的充分连接面积得到了可靠的保障,并且连接线12、13到连接电极5-8的连接强度和连接可靠性也大大提高了。
在上述较佳实施例中,沿对角线方向延伸的锯齿形通孔和多个与这些通孔平行的锯齿形通孔确定了线型通孔5a-8a,不过每一个通孔只要有线形部分就是合适的形状。例如,线型通孔可以是弯曲的。此外,如图4A所示,如此分割通孔5a,从而形成了多个锯齿状通孔25a,25a,它们的形状是在对角线方向和基本上平行于对角线的方向连续。
此外,如图4B中所示的通孔35a,也可以使用十字型的通孔。
那就是说,下面的情况也是可以接受的:多个的直部在中间被互相分割的形状,或者多个的直部连续排列尾部呈一定角度的形状。
那就是说,多个线型通孔可以是组合的形状,所以多个的线形部分可以如上所述地组合。任何情况下,相对于圆形截面的通孔的情况,蚀刻过程中蚀刻剂的流动性增强了,无需扩大通孔的开口面积就可以容易地生成通孔,并且连接电极到连接线的连接可靠性大大增强了。
在上述较佳实施例中,含有两个IDT3、4的表面声波滤波器被介绍为表面声波元件1,但是,在本发明较佳实施例中,含有其他结构的表面声波滤波器,以及合适的表面声波元件如表面声波共振器和表面声波延迟线,也可以被用作表面声波元件。
此外,组件的结构并不限制为图示中的结构,例如,组件成员10可以由没有凹陷部分10a的扁平组件成员形成。
虽然已经揭示了本发明的较佳实施例,但是认为具有这里所揭示的原理的各种现实都在下列权利要求的范围以内。因此,应该知道,本发明的范围只由本发明的权利要求限定。

Claims (20)

1.一种表面声波装置,其特征在于包含:
具有元件安装表面的组件;
设置在组件中,并且至少具有一个连接电极的表面声波元件;
粘合剂,以便将表面声波元件固定到组件的元件安装表面;以及
连接到至少一个连接电极的至少一个连接线;
其中
所述至少一个连接电极有至少一个线型通孔,延伸穿过一个区域,该区域中至少一个连接线被连接到至少一个连接电极。
2.如权利要求1所述的表面声波装置,其特征在于固态时粘合剂有大约80HSD或更低的肖氏硬度。
3.如权利要求2所述的表面声波装置,其特征在于粘合剂是改良环氧树脂胶和硅树脂胶中的一种。
4.如权利要求1所述的表面声波装置,其特征在于线型通孔有由多个组合线形部分所确定的形状。
5.如权利要求4所述的表面声波装置,其特征在于线型通孔有锯齿型的形状。
6.如权利要求4所述的表面声波装置,其特征在于线型通孔有十字型的形状。
7.如权利要求1所述的表面声波装置,其特征在于至少一个连接电极内部形成有多个通孔。
8.如权利要求1所述的表面声波装置,其特征在于至少一个通孔包括多个边缘部分。
9.如权利要求1所述的表面声波装置,其特征在于通孔的宽度在大约0.2μm到大约20μm的范围内。
10.如权利要求1所述的表面声波装置,其特征在于线型通孔有沿至少一个连接电极的对角线方向或与对角线方向平行锯齿状延伸的配置。
11.如权利要求1所述的表面声波装置,其特征在于组件在上表面配置有一个凹陷部分。
12.如权利要求1所述的表面声波装置,其特征在于组件包括一个第一组件成员,该组件成员含有框架形状的定位片,该定位片分层环绕在凹陷部分。
13.如权利要求1所述的表面声波装置,  其特征在于组件成员的凹陷部分的下表面确定了元件安装表面。
14.一种表面声波装置的制造方法,其特征在于包括以下步骤:
配备有元件安装表面的组件;
配备表面声波基片;
在表面声波基片上形成导电连续薄膜;
刻蚀导电连续薄膜,形成至少一个叉指式换能器和含至少一个线型通孔的至少一个连接电极;
用粘合剂把表面声波元件固定到组件的元件安装表面;
并且使用超声导线连接法,把连接线连接到表面声波元件的至少一个连接电极。
15.如权利要求14所述的方法,其特征在于至少一个通孔和叉指电极同时形成。
16.如权利要求14所述的方法,其特征在于线型通孔有锯齿型的形状。
17.如权利要求14所述的方法,其特征在于线型通孔有十字型形状。
18.如权利要求14所述的方法,其特征在于至少一个连接电极其中有多个通孔形成。
19.如权利要求14所述的方法,其特征在于至少一个通孔含有多个边缘部分。
20.如权利要求14所述的方法,其特征在于通孔的宽度在大约0.2μm到20μm的范围内。
CN00102358A 1999-02-18 2000-02-18 表面声波装置及其制造方法 Pending CN1264219A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP39775/1999 1999-02-18
JP3977599 1999-02-18
JP67348/1999 1999-03-12
JP11067348A JP2000307373A (ja) 1999-02-18 1999-03-12 表面波装置及びその製造方法

Publications (1)

Publication Number Publication Date
CN1264219A true CN1264219A (zh) 2000-08-23

Family

ID=26379161

Family Applications (1)

Application Number Title Priority Date Filing Date
CN00102358A Pending CN1264219A (zh) 1999-02-18 2000-02-18 表面声波装置及其制造方法

Country Status (5)

Country Link
US (1) US6414415B1 (zh)
EP (1) EP1030444A3 (zh)
JP (1) JP2000307373A (zh)
KR (1) KR20000076671A (zh)
CN (1) CN1264219A (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107078714A (zh) * 2014-10-17 2017-08-18 株式会社村田制作所 压电器件、压电器件的制造方法
CN110277486A (zh) * 2019-07-05 2019-09-24 重庆大学 一种采用阵列孔引出电极的高温声表面波器件芯片及其制作方法

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6297562B1 (en) * 1999-09-20 2001-10-02 Telefonaktieboalget Lm Ericsson (Publ) Semiconductive chip having a bond pad located on an active device
US7095101B2 (en) * 2000-11-15 2006-08-22 Jiahn-Chang Wu Supporting frame for surface-mount diode package
US6930364B2 (en) * 2001-09-13 2005-08-16 Silicon Light Machines Corporation Microelectronic mechanical system and methods
US6877209B1 (en) 2002-08-28 2005-04-12 Silicon Light Machines, Inc. Method for sealing an active area of a surface acoustic wave device on a wafer
US6846423B1 (en) 2002-08-28 2005-01-25 Silicon Light Machines Corporation Wafer-level seal for non-silicon-based devices
WO2004043617A1 (ja) * 2002-11-12 2004-05-27 Seiko Epson Corporation 圧電振動体、その製造方法、およびその圧電振動体を備えた機器
US8896397B2 (en) * 2003-04-16 2014-11-25 Intellectual Ventures Fund 77 Llc Surface acoustic wave device and method of adjusting LC component of surface acoustic wave device
JP4381714B2 (ja) * 2003-04-16 2009-12-09 Okiセミコンダクタ株式会社 表面弾性波デバイス、表面弾性波装置、及び表面弾性波デバイスの製造方法
JP3764450B2 (ja) * 2003-07-28 2006-04-05 Tdk株式会社 表面弾性波素子、表面弾性波装置、表面弾性波デュプレクサ、及び表面弾性波素子の製造方法
WO2005099088A1 (en) * 2004-03-26 2005-10-20 Cypress Semiconductor Corp. Integrated circuit having one or more conductive devices formed over a saw and/or mems device
TWI237886B (en) * 2004-07-06 2005-08-11 Himax Tech Inc Bonding pad and chip structure
DE102007058951B4 (de) * 2007-12-07 2020-03-26 Snaptrack, Inc. MEMS Package
JP2012165367A (ja) * 2011-01-18 2012-08-30 Nippon Dempa Kogyo Co Ltd 圧電振動子及び弾性波デバイス

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5068058A (zh) 1973-10-17 1975-06-07
JPS5117666A (zh) 1974-08-05 1976-02-12 Hitachi Ltd
JPS5643816A (en) * 1979-09-17 1981-04-22 Hitachi Ltd Structure of bonding pad part
DE2945670C2 (de) * 1979-11-12 1982-02-11 Siemens AG, 1000 Berlin und 8000 München Elektrisch leitende Verbindung der aktiven Teile eines elektrischen Bauelements oder einer integrierten Schaltung mit Anschlußpunkten
JPS5699926U (zh) * 1979-12-27 1981-08-06
JPS5699926A (en) 1980-01-16 1981-08-11 Kawai Musical Instr Mfg Co Preferentially selective switch circuit
GB2108800B (en) 1981-10-14 1985-03-20 Gen Electric Co Plc Surface acoustic wave devices
JPS59232432A (ja) 1983-06-15 1984-12-27 Fujitsu Ltd 混成集積回路の製造方法
JPS60127813A (ja) * 1983-12-14 1985-07-08 Matsushita Electric Ind Co Ltd 表面波フイルタ
JPS61172362A (ja) 1985-01-28 1986-08-04 Seiko Epson Corp ボンデイング電極構造
JPS62174934A (ja) 1986-01-28 1987-07-31 Mitsubishi Electric Corp 半導体装置およびその製造方法
US4999535A (en) 1989-09-25 1991-03-12 The United States Of America As Represented By The Secretary Of The Army Saw transducer with improved bus-bar design
JPH03285338A (ja) 1990-04-02 1991-12-16 Toshiba Corp ボンディングパッド
JPH1168504A (ja) * 1997-08-11 1999-03-09 Murata Mfg Co Ltd 表面波装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107078714A (zh) * 2014-10-17 2017-08-18 株式会社村田制作所 压电器件、压电器件的制造方法
CN110277486A (zh) * 2019-07-05 2019-09-24 重庆大学 一种采用阵列孔引出电极的高温声表面波器件芯片及其制作方法
CN110277486B (zh) * 2019-07-05 2024-03-12 重庆大学 一种采用阵列孔引出电极的高温声表面波器件芯片及其制作方法

Also Published As

Publication number Publication date
JP2000307373A (ja) 2000-11-02
EP1030444A3 (en) 2000-12-13
US6414415B1 (en) 2002-07-02
EP1030444A2 (en) 2000-08-23
KR20000076671A (ko) 2000-12-26

Similar Documents

Publication Publication Date Title
CN1264219A (zh) 表面声波装置及其制造方法
CN1129230C (zh) 表面声波器件及其制造方法
CN1276576C (zh) 压电器件
CN1495999A (zh) 声波器件及其制作方法
CN1050947C (zh) 压电谐振元件
CN1322059A (zh) 声表面波器件制造方法
CN1107081A (zh) 片型压电共振动元件
CN1536763A (zh) 表面声波器件及其制造方法
CN1132307C (zh) 能陷型压电谐振器
CN1157850C (zh) 压电谐振器
CN1100353C (zh) 压电元件
CN1147941C (zh) 利用厚度延伸振动模式的谐波的压电谐振器
CN1142626C (zh) 梯形滤波器
CN1144359C (zh) 声表面波装置
CN1156968C (zh) 压电谐振部件
CN1131590C (zh) 声表面波器件
CN1147996C (zh) 片状压电滤波器
CN1574619A (zh) 能阱型压电谐振部件
CN1162966C (zh) 压电谐振器
CN1574622A (zh) 压电谐振部件
CN1274992A (zh) 压电装置及其制造方法
CN1156964C (zh) 电子元件、压电谐振元件以及用于制造电子元件和压电谐振元件的方法
CN1308411A (zh) 电子元件装配的基片和采用该基片的压电谐振元件
JPH09162693A (ja) 弾性表面波素子
CN1236555C (zh) 一种压电谐振元件

Legal Events

Date Code Title Description
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C06 Publication
PB01 Publication
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication