CN1257999C - 基片处理过程中用于消除废白粉的装置 - Google Patents

基片处理过程中用于消除废白粉的装置 Download PDF

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Publication number
CN1257999C
CN1257999C CNB018218059A CN01821805A CN1257999C CN 1257999 C CN1257999 C CN 1257999C CN B018218059 A CNB018218059 A CN B018218059A CN 01821805 A CN01821805 A CN 01821805A CN 1257999 C CN1257999 C CN 1257999C
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CN
China
Prior art keywords
chamber
gas
substrate processing
exhaust
cleaning gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB018218059A
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English (en)
Chinese (zh)
Other versions
CN1531606A (zh
Inventor
S·亚达夫
Q·商
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN1531606A publication Critical patent/CN1531606A/zh
Application granted granted Critical
Publication of CN1257999C publication Critical patent/CN1257999C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D46/00—Filters or filtering processes specially modified for separating dispersed particles from gases or vapours
    • B01D46/10—Particle separators, e.g. dust precipitators, using filter plates, sheets or pads having plane surfaces
    • B01D46/12—Particle separators, e.g. dust precipitators, using filter plates, sheets or pads having plane surfaces in multiple arrangements
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H01J37/32844—Treating effluent gases
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
    • Y02C20/00—Capture or disposal of greenhouse gases
    • Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Filtering Materials (AREA)
  • Filtering Of Dispersed Particles In Gases (AREA)
CNB018218059A 2001-01-09 2001-12-20 基片处理过程中用于消除废白粉的装置 Expired - Fee Related CN1257999C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US75684101A 2001-01-09 2001-01-09
US09/756,841 2001-01-09

Publications (2)

Publication Number Publication Date
CN1531606A CN1531606A (zh) 2004-09-22
CN1257999C true CN1257999C (zh) 2006-05-31

Family

ID=25045280

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB018218059A Expired - Fee Related CN1257999C (zh) 2001-01-09 2001-12-20 基片处理过程中用于消除废白粉的装置

Country Status (5)

Country Link
JP (1) JP2004537844A (ja)
KR (1) KR20030065593A (ja)
CN (1) CN1257999C (ja)
TW (1) TW536739B (ja)
WO (1) WO2002055756A1 (ja)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8066634B2 (en) 2003-07-28 2011-11-29 Welch Allyn, Inc. Digital otoscope
JP4596805B2 (ja) 2004-03-31 2010-12-15 財団法人国際科学振興財団 真空管製造装置
KR101755970B1 (ko) * 2008-02-11 2017-07-07 엔테그리스, 아이엔씨. 이온 공급원 챔버를 포함하는 이온 주입 시스템의 성능 향상 및 수명 연장 방법
CN103071646A (zh) * 2011-10-25 2013-05-01 深圳市迅捷兴电路技术有限公司 一种用等离子体去除软硬结合板钻污的方法
CN102600675B (zh) * 2012-03-22 2013-12-04 西安航空制动科技有限公司 化学气相沉积炉用尾气处理装置
KR101628077B1 (ko) * 2014-07-22 2016-06-08 위너스 주식회사 질소가스 분사장치
KR101820821B1 (ko) * 2017-06-27 2018-01-22 (주)제이솔루션 설치가 용이한 반도체 및 lcd 제조공정의 배기가스 가열용 3중 배관 가열장치
KR102157876B1 (ko) * 2018-08-28 2020-09-18 한국기계연구원 리모트 플라즈마 장치를 구비한 진공 펌프 시스템
CN109621578A (zh) * 2018-11-28 2019-04-16 中核新能核工业工程有限责任公司 一种真空管道多重可拆卸网式过滤器
WO2021142028A1 (en) * 2020-01-10 2021-07-15 Lam Research Corporation Ammonia abatement for improved roughing pump performance

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60198394A (ja) * 1984-03-21 1985-10-07 Anelva Corp 真空処理装置の排気装置
US5647945A (en) * 1993-08-25 1997-07-15 Tokyo Electron Limited Vacuum processing apparatus
US5928426A (en) * 1996-08-08 1999-07-27 Novellus Systems, Inc. Method and apparatus for treating exhaust gases from CVD, PECVD or plasma etch reactors

Also Published As

Publication number Publication date
CN1531606A (zh) 2004-09-22
KR20030065593A (ko) 2003-08-06
JP2004537844A (ja) 2004-12-16
TW536739B (en) 2003-06-11
WO2002055756A1 (en) 2002-07-18

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C06 Publication
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SE01 Entry into force of request for substantive examination
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GR01 Patent grant
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CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20060531

Termination date: 20121220