JP5329951B2 - 堆積工程のための高効率トラップ - Google Patents
堆積工程のための高効率トラップ Download PDFInfo
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- JP5329951B2 JP5329951B2 JP2008515710A JP2008515710A JP5329951B2 JP 5329951 B2 JP5329951 B2 JP 5329951B2 JP 2008515710 A JP2008515710 A JP 2008515710A JP 2008515710 A JP2008515710 A JP 2008515710A JP 5329951 B2 JP5329951 B2 JP 5329951B2
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- JP
- Japan
- Prior art keywords
- trap
- fluorine
- products
- source
- traps
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000005137 deposition process Methods 0.000 title description 5
- 229910052731 fluorine Inorganic materials 0.000 claims description 60
- 239000011737 fluorine Substances 0.000 claims description 60
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 59
- 239000007789 gas Substances 0.000 claims description 56
- 239000006227 byproduct Substances 0.000 claims description 52
- 238000000034 method Methods 0.000 claims description 36
- 238000006243 chemical reaction Methods 0.000 claims description 27
- 239000004065 semiconductor Substances 0.000 claims description 17
- 239000012495 reaction gas Substances 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 3
- 239000000047 product Substances 0.000 claims 1
- 238000004140 cleaning Methods 0.000 description 21
- 238000000151 deposition Methods 0.000 description 14
- 230000008021 deposition Effects 0.000 description 13
- 238000000231 atomic layer deposition Methods 0.000 description 12
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 9
- 239000002243 precursor Substances 0.000 description 9
- 239000002699 waste material Substances 0.000 description 9
- 238000009825 accumulation Methods 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000000243 solution Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 238000000427 thin-film deposition Methods 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 150000002221 fluorine Chemical class 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011365 complex material Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000037029 cross reaction Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Description
Claims (2)
- 真空処理ユニットの排気ガスから実質的に全ての副産物を取り除くための少なくとも2つの並列に接続されたトラップ接続列であり、各トラップ接続列が少なくとも1つのトラップを含む、前記トラップ接続列と;
前記トラップに反応ガスを供給して、該トラップ内で排気ガス中の副産物の反応を完了させる反応ガス源と;
前記トラップにフッ素を供給して、蓄積された副産物を前記トラップからエッチングするフッ素源と;
を含む半導体処理システムにおいて、
単一の反応ガス源及び単一のフッ素源が各トラップ接続列に共通に設けられており、前記反応ガス源から一のトラップ接続列に反応ガスを供給しつつ、前記フッ素源から他のトラップ接続列にフッ素を供給する、半導体処理システム。 - 半導体処理ユニットの排気ガスから副産物を取り除く方法であって、該方法は、
少なくとも1つのトラップを含むトラップ接続列に排気ガスを通過させる工程と;
前記トラップに反応ガスを導入して、前記トラップ内で、前記排気ガス中の副産物の反応を完了させる工程と;
前記トラップにフッ素を導入して、蓄積された副産物を前記トラップからエッチングする工程とを含み、
前記半導体処理ユニットは、少なくとも2つの並列接続されたトラップ接続列を含み、単一の反応ガス源及び単一のフッ素源が各トラップ接続列に共通に設けられており、前記反応ガス源から一のトラップ接続列に反応ガスを供給しつつ、前記フッ素源から他のトラップ接続列にフッ素を供給する、方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/145,742 US20060276049A1 (en) | 2005-06-06 | 2005-06-06 | High efficiency trap for deposition process |
US11/145,742 | 2005-06-06 | ||
PCT/US2006/017969 WO2006132751A2 (en) | 2005-06-06 | 2006-05-09 | High efficiency trap for deposition process |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008543107A JP2008543107A (ja) | 2008-11-27 |
JP5329951B2 true JP5329951B2 (ja) | 2013-10-30 |
Family
ID=37494721
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008515710A Active JP5329951B2 (ja) | 2005-06-06 | 2006-05-09 | 堆積工程のための高効率トラップ |
Country Status (7)
Country | Link |
---|---|
US (1) | US20060276049A1 (ja) |
EP (1) | EP1889286B1 (ja) |
JP (1) | JP5329951B2 (ja) |
KR (2) | KR20080018883A (ja) |
CN (1) | CN101208779B (ja) |
TW (1) | TWI453788B (ja) |
WO (1) | WO2006132751A2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102209205B1 (ko) * | 2019-08-21 | 2021-02-01 | 주식회사 미래보 | 반도체 공정용 유로방향 전환식 반응부산물 포집장치 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110017140A1 (en) * | 2006-07-21 | 2011-01-27 | Christopher Mark Bailey | Method of treating a gas stream |
US20080124670A1 (en) * | 2006-11-29 | 2008-05-29 | Frank Jansen | Inductively heated trap |
US8628607B2 (en) * | 2008-02-11 | 2014-01-14 | Yadapalli Kondala Rao | Vacuum pump suction filter meant for collecting impurities from function |
JP5501807B2 (ja) * | 2009-03-31 | 2014-05-28 | 東京エレクトロン株式会社 | 処理装置 |
DE102009055638A1 (de) * | 2009-11-25 | 2011-05-26 | Oerlikon Leybold Vacuum Gmbh | Heißfallenanordnung |
TWI588286B (zh) | 2013-11-26 | 2017-06-21 | 烏翠泰克股份有限公司 | 經改良的電漿強化原子層沉積方法、周期及裝置 |
DE202014007202U1 (de) | 2014-09-03 | 2014-11-24 | Lg Electronics Inc. | Wäschebehandlungsvorrichtung |
KR102274459B1 (ko) | 2019-12-27 | 2021-07-07 | 한국기계연구원 | 플라즈마 세정장치 및 이를 구비한 반도체 공정설비 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1864104A (en) | 1930-05-29 | 1932-06-21 | A J Reach Company | Helmet |
JPH073464A (ja) * | 1993-06-17 | 1995-01-06 | Sony Corp | 排ガス処理装置 |
JPH08176829A (ja) * | 1994-12-26 | 1996-07-09 | Nec Kansai Ltd | 薄膜成長方法及び減圧cvd装置 |
US6187072B1 (en) * | 1995-09-25 | 2001-02-13 | Applied Materials, Inc. | Method and apparatus for reducing perfluorocompound gases from substrate processing equipment emissions |
US6045618A (en) * | 1995-09-25 | 2000-04-04 | Applied Materials, Inc. | Microwave apparatus for in-situ vacuum line cleaning for substrate processing equipment |
JP3770718B2 (ja) | 1997-12-22 | 2006-04-26 | セントラル硝子株式会社 | フッ化アンモニウムの付着した基体のクリーニング方法 |
JP4426671B2 (ja) * | 1998-11-27 | 2010-03-03 | 東京エレクトロン株式会社 | 熱処理装置及びその洗浄方法 |
US6383300B1 (en) * | 1998-11-27 | 2002-05-07 | Tokyo Electron Ltd. | Heat treatment apparatus and cleaning method of the same |
US6773687B1 (en) * | 1999-11-24 | 2004-08-10 | Tokyo Electron Limited | Exhaust apparatus for process apparatus and method of removing impurity gas |
JP4599701B2 (ja) * | 1999-11-24 | 2010-12-15 | 東京エレクトロン株式会社 | 成膜装置の排気系構造及び不純物ガスの除去方法 |
JP2001189277A (ja) * | 1999-12-28 | 2001-07-10 | Ebara Corp | 配管の洗浄方法及び装置 |
JP2003045861A (ja) * | 2001-07-30 | 2003-02-14 | Nec Kansai Ltd | 半導体製造装置 |
US6770250B2 (en) * | 2001-09-24 | 2004-08-03 | Cooper Environmental Services | Apparatus and methods for removing mercury from fluid streams |
US20040037768A1 (en) * | 2001-11-26 | 2004-02-26 | Robert Jackson | Method and system for on-site generation and distribution of a process gas |
US20030121796A1 (en) * | 2001-11-26 | 2003-07-03 | Siegele Stephen H | Generation and distribution of molecular fluorine within a fabrication facility |
JP4285108B2 (ja) * | 2003-06-25 | 2009-06-24 | 東京エレクトロン株式会社 | トラップ装置、処理システム及び不純物除去方法 |
JP2005142377A (ja) * | 2003-11-07 | 2005-06-02 | Mitsubishi Heavy Ind Ltd | クリーニングガスのリサイクルシステム |
-
2005
- 2005-06-06 US US11/145,742 patent/US20060276049A1/en not_active Abandoned
-
2006
- 2006-05-09 CN CN2006800197028A patent/CN101208779B/zh active Active
- 2006-05-09 KR KR1020077028546A patent/KR20080018883A/ko active Application Filing
- 2006-05-09 JP JP2008515710A patent/JP5329951B2/ja active Active
- 2006-05-09 EP EP06759431.7A patent/EP1889286B1/en active Active
- 2006-05-09 WO PCT/US2006/017969 patent/WO2006132751A2/en active Application Filing
- 2006-05-09 KR KR1020137019608A patent/KR101434815B1/ko active IP Right Grant
- 2006-05-25 TW TW095118548A patent/TWI453788B/zh active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102209205B1 (ko) * | 2019-08-21 | 2021-02-01 | 주식회사 미래보 | 반도체 공정용 유로방향 전환식 반응부산물 포집장치 |
Also Published As
Publication number | Publication date |
---|---|
EP1889286A4 (en) | 2010-07-28 |
WO2006132751A3 (en) | 2007-12-06 |
EP1889286A2 (en) | 2008-02-20 |
TWI453788B (zh) | 2014-09-21 |
KR20080018883A (ko) | 2008-02-28 |
US20060276049A1 (en) | 2006-12-07 |
CN101208779A (zh) | 2008-06-25 |
WO2006132751A2 (en) | 2006-12-14 |
JP2008543107A (ja) | 2008-11-27 |
KR20130105720A (ko) | 2013-09-25 |
KR101434815B1 (ko) | 2014-08-26 |
CN101208779B (zh) | 2012-04-11 |
EP1889286B1 (en) | 2018-03-28 |
TW200703448A (en) | 2007-01-16 |
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