CN1255747A - 半导体器件的制造方法 - Google Patents
半导体器件的制造方法 Download PDFInfo
- Publication number
- CN1255747A CN1255747A CN99125090A CN99125090A CN1255747A CN 1255747 A CN1255747 A CN 1255747A CN 99125090 A CN99125090 A CN 99125090A CN 99125090 A CN99125090 A CN 99125090A CN 1255747 A CN1255747 A CN 1255747A
- Authority
- CN
- China
- Prior art keywords
- temperature
- layer
- aluminium
- lower floor
- metal wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 36
- 239000004065 semiconductor Substances 0.000 title claims description 29
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 75
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 70
- 230000008021 deposition Effects 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 7
- 239000004411 aluminium Substances 0.000 claims description 67
- 229910000838 Al alloy Inorganic materials 0.000 claims description 54
- 229910052751 metal Inorganic materials 0.000 claims description 53
- 239000002184 metal Substances 0.000 claims description 53
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 44
- 238000007872 degassing Methods 0.000 claims description 34
- 239000010936 titanium Substances 0.000 claims description 23
- 229910052719 titanium Inorganic materials 0.000 claims description 23
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 21
- 238000005530 etching Methods 0.000 claims description 20
- 239000000377 silicon dioxide Substances 0.000 claims description 17
- 238000000151 deposition Methods 0.000 claims description 14
- 238000009826 distribution Methods 0.000 claims description 11
- 238000002955 isolation Methods 0.000 claims description 11
- 238000005229 chemical vapour deposition Methods 0.000 claims description 8
- 239000003344 environmental pollutant Substances 0.000 claims description 7
- 231100000719 pollutant Toxicity 0.000 claims description 7
- 238000009792 diffusion process Methods 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 125000006850 spacer group Chemical group 0.000 claims 2
- 230000008646 thermal stress Effects 0.000 abstract description 12
- 238000010943 off-gassing Methods 0.000 abstract 2
- 229920002120 photoresistant polymer Polymers 0.000 description 15
- 238000003475 lamination Methods 0.000 description 10
- 229910052814 silicon oxide Inorganic materials 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 7
- 238000001259 photo etching Methods 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 5
- 229910018594 Si-Cu Inorganic materials 0.000 description 4
- 229910008465 Si—Cu Inorganic materials 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- JRBRVDCKNXZZGH-UHFFFAOYSA-N alumane;copper Chemical compound [AlH3].[Cu] JRBRVDCKNXZZGH-UHFFFAOYSA-N 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 230000005669 field effect Effects 0.000 description 3
- 230000001771 impaired effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000003870 refractory metal Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910001069 Ti alloy Inorganic materials 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 150000003608 titanium Chemical class 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- JEGUKCSWCFPDGT-UHFFFAOYSA-N h2o hydrate Chemical compound O.O JEGUKCSWCFPDGT-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76804—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics by forming tapered via holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76828—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
Claims (14)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP33780498A JP3329290B2 (ja) | 1998-11-27 | 1998-11-27 | 半導体装置の製造方法 |
JP337804/1998 | 1998-11-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1255747A true CN1255747A (zh) | 2000-06-07 |
CN1124648C CN1124648C (zh) | 2003-10-15 |
Family
ID=18312133
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN99125090A Expired - Fee Related CN1124648C (zh) | 1998-11-27 | 1999-11-26 | 半导体器件的制造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6444571B1 (zh) |
EP (1) | EP1006571A3 (zh) |
JP (1) | JP3329290B2 (zh) |
KR (1) | KR100374981B1 (zh) |
CN (1) | CN1124648C (zh) |
TW (1) | TW444245B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102024747A (zh) * | 2009-09-11 | 2011-04-20 | 中芯国际集成电路制造(上海)有限公司 | 功率器件的铝插塞制作方法 |
CN103390542A (zh) * | 2013-07-25 | 2013-11-13 | 上海宏力半导体制造有限公司 | Mim电容器的形成方法 |
CN111128869A (zh) * | 2019-12-26 | 2020-05-08 | 华虹半导体(无锡)有限公司 | 优化热铝填孔能力的制备方法 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002118167A (ja) * | 2000-10-06 | 2002-04-19 | Nec Corp | 半導体装置の製造方法 |
US6794282B2 (en) | 2002-11-27 | 2004-09-21 | Infineon Technologies Ag | Three layer aluminum deposition process for high aspect ratio CL contacts |
US7351656B2 (en) * | 2005-01-21 | 2008-04-01 | Kabushiki Kaihsa Toshiba | Semiconductor device having oxidized metal film and manufacture method of the same |
US10354871B2 (en) | 2017-09-11 | 2019-07-16 | General Electric Company | Sputtering system and method for forming a metal layer on a semiconductor device |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0810693B2 (ja) | 1987-09-17 | 1996-01-31 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
JPH01258444A (ja) * | 1988-04-08 | 1989-10-16 | Fujitsu Ltd | ドライ前処理装置 |
CA2017720C (en) * | 1990-05-29 | 1999-01-19 | Luc Ouellet | Sog with moisture-resistant protective capping layer |
CA2032763C (en) * | 1990-12-20 | 2001-08-21 | Mitel Corporation | Prevention of via poisoning by glow discharge induced desorption |
JP2928409B2 (ja) | 1991-08-19 | 1999-08-03 | 松下電子工業株式会社 | 半導体装置の製造方法 |
JPH0555225A (ja) | 1991-08-26 | 1993-03-05 | Sony Corp | 半導体装置の製造方法 |
US5643407A (en) * | 1994-09-30 | 1997-07-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Solving the poison via problem by adding N2 plasma treatment after via etching |
JPH0964037A (ja) | 1995-08-23 | 1997-03-07 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
US5789315A (en) * | 1996-07-17 | 1998-08-04 | Advanced Micro Devices, Inc. | Eliminating metal extrusions by controlling the liner deposition temperature |
JPH10233444A (ja) | 1997-02-19 | 1998-09-02 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
-
1998
- 1998-11-27 JP JP33780498A patent/JP3329290B2/ja not_active Expired - Fee Related
-
1999
- 1999-11-24 US US09/449,236 patent/US6444571B1/en not_active Expired - Fee Related
- 1999-11-25 EP EP99123516A patent/EP1006571A3/en not_active Ceased
- 1999-11-25 TW TW088120747A patent/TW444245B/zh not_active IP Right Cessation
- 1999-11-26 CN CN99125090A patent/CN1124648C/zh not_active Expired - Fee Related
- 1999-11-26 KR KR10-1999-0052914A patent/KR100374981B1/ko not_active IP Right Cessation
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102024747A (zh) * | 2009-09-11 | 2011-04-20 | 中芯国际集成电路制造(上海)有限公司 | 功率器件的铝插塞制作方法 |
CN102024747B (zh) * | 2009-09-11 | 2015-02-11 | 中芯国际集成电路制造(上海)有限公司 | 功率器件的铝插塞制作方法 |
CN103390542A (zh) * | 2013-07-25 | 2013-11-13 | 上海宏力半导体制造有限公司 | Mim电容器的形成方法 |
CN111128869A (zh) * | 2019-12-26 | 2020-05-08 | 华虹半导体(无锡)有限公司 | 优化热铝填孔能力的制备方法 |
Also Published As
Publication number | Publication date |
---|---|
JP3329290B2 (ja) | 2002-09-30 |
EP1006571A3 (en) | 2002-07-17 |
TW444245B (en) | 2001-07-01 |
JP2000164708A (ja) | 2000-06-16 |
CN1124648C (zh) | 2003-10-15 |
KR20000035720A (ko) | 2000-06-26 |
EP1006571A2 (en) | 2000-06-07 |
US6444571B1 (en) | 2002-09-03 |
KR100374981B1 (ko) | 2003-03-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C06 | Publication | ||
PB01 | Publication | ||
ASS | Succession or assignment of patent right |
Owner name: NEC ELECTRONICS TAIWAN LTD. Free format text: FORMER OWNER: NIPPON ELECTRIC CO., LTD. Effective date: 20030801 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20030801 Address after: Kanagawa, Japan Patentee after: NEC Corp. Address before: Tokyo, Japan Patentee before: NEC Corp. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: RENESAS ELECTRONICS CORPORATION Free format text: FORMER NAME: NEC CORP. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Kanagawa, Japan Patentee after: Renesas Electronics Corporation Address before: Kanagawa, Japan Patentee before: NEC Corp. |
|
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20031015 Termination date: 20131126 |