CN1239758C - 大量制备β-SiC纳米晶须的方法 - Google Patents
大量制备β-SiC纳米晶须的方法 Download PDFInfo
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- CN1239758C CN1239758C CN 03141669 CN03141669A CN1239758C CN 1239758 C CN1239758 C CN 1239758C CN 03141669 CN03141669 CN 03141669 CN 03141669 A CN03141669 A CN 03141669A CN 1239758 C CN1239758 C CN 1239758C
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- nano whisker
- sic nano
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- silicon dioxide
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CN 03141669 CN1239758C (zh) | 2003-07-17 | 2003-07-17 | 大量制备β-SiC纳米晶须的方法 |
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CN 03141669 CN1239758C (zh) | 2003-07-17 | 2003-07-17 | 大量制备β-SiC纳米晶须的方法 |
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CN1487127A CN1487127A (zh) | 2004-04-07 |
CN1239758C true CN1239758C (zh) | 2006-02-01 |
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CN 03141669 Expired - Fee Related CN1239758C (zh) | 2003-07-17 | 2003-07-17 | 大量制备β-SiC纳米晶须的方法 |
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Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1294297C (zh) * | 2005-05-24 | 2007-01-10 | 西北工业大学 | 制备碳化硅晶须的方法 |
CN100384725C (zh) * | 2005-07-21 | 2008-04-30 | 同济大学 | 一种碳化硅纳米线的制备方法 |
CN100415951C (zh) * | 2006-01-17 | 2008-09-03 | 浙江大学 | 一种适合SiC晶须生长的方法 |
CN100355948C (zh) * | 2006-03-16 | 2007-12-19 | 武汉科技大学 | 一种合成仿生碳化硅晶须的方法 |
CN101319368B (zh) * | 2008-05-09 | 2011-01-26 | 浙江理工大学 | 一种同时合成SiO2纳米线和SiC晶须的方法 |
KR101242529B1 (ko) * | 2011-02-22 | 2013-03-12 | 주식회사 대유신소재 | 나노 실리콘카바이드 코팅을 이용한 탄소재료 계면강화 방법 |
CN103834988B (zh) * | 2014-03-24 | 2016-06-15 | 中国科学院山西煤炭化学研究所 | 一种制备纳米碳化硅晶须的方法 |
CN110846718B (zh) * | 2019-12-20 | 2021-10-19 | 海南大学 | 一种利用混杂硅源制备碳化硅纳米晶须的方法 |
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CN1487127A (zh) | 2004-04-07 |
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Owner name: SHANGHAI QIANG LU ELECTRONIC TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: SHANGHAI JIAOTONG UNIV. Effective date: 20081107 |
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Effective date of registration: 20081107 Address after: Shanghai Songjiang District City Maogang town No. 67 North Road, room 117 in the library Patentee after: Shanghai strong land Electronic Technology Co., Ltd. Address before: No. 1954, Huashan Road, Shanghai Patentee before: Shanghai Jiao Tong University |
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Granted publication date: 20060201 Termination date: 20130717 |