CN1222813C - 有源矩阵型液晶显示装置及其制造方法 - Google Patents
有源矩阵型液晶显示装置及其制造方法 Download PDFInfo
- Publication number
- CN1222813C CN1222813C CN 02131667 CN02131667A CN1222813C CN 1222813 C CN1222813 C CN 1222813C CN 02131667 CN02131667 CN 02131667 CN 02131667 A CN02131667 A CN 02131667A CN 1222813 C CN1222813 C CN 1222813C
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- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 80
- 239000011159 matrix material Substances 0.000 title claims abstract description 66
- 238000004519 manufacturing process Methods 0.000 title claims description 46
- 230000005684 electric field Effects 0.000 claims abstract description 54
- 239000010408 film Substances 0.000 claims description 183
- 239000000758 substrate Substances 0.000 claims description 102
- 238000000034 method Methods 0.000 claims description 61
- 230000015572 biosynthetic process Effects 0.000 claims description 25
- 239000010409 thin film Substances 0.000 claims description 21
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 15
- 230000008569 process Effects 0.000 claims description 15
- 238000000059 patterning Methods 0.000 claims description 9
- 230000000694 effects Effects 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 5
- 239000011229 interlayer Substances 0.000 description 50
- 239000010410 layer Substances 0.000 description 29
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 16
- 239000011347 resin Substances 0.000 description 16
- 229920005989 resin Polymers 0.000 description 16
- 239000004065 semiconductor Substances 0.000 description 14
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 12
- 229910052581 Si3N4 Inorganic materials 0.000 description 12
- 239000011651 chromium Substances 0.000 description 12
- 229910052804 chromium Inorganic materials 0.000 description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 12
- 230000002093 peripheral effect Effects 0.000 description 11
- -1 acryl Chemical group 0.000 description 10
- 238000005530 etching Methods 0.000 description 10
- 239000012528 membrane Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 230000005540 biological transmission Effects 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- JRBRVDCKNXZZGH-UHFFFAOYSA-N alumane;copper Chemical compound [AlH3].[Cu] JRBRVDCKNXZZGH-UHFFFAOYSA-N 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 229910001092 metal group alloy Inorganic materials 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 239000006229 carbon black Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 150000003949 imides Chemical class 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 241000872198 Serjania polyphylla Species 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 210000002858 crystal cell Anatomy 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000005685 electric field effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Images
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Abstract
Description
Claims (43)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 02131667 CN1222813C (zh) | 2002-09-12 | 2002-09-12 | 有源矩阵型液晶显示装置及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 02131667 CN1222813C (zh) | 2002-09-12 | 2002-09-12 | 有源矩阵型液晶显示装置及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1482494A CN1482494A (zh) | 2004-03-17 |
CN1222813C true CN1222813C (zh) | 2005-10-12 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN 02131667 Expired - Lifetime CN1222813C (zh) | 2002-09-12 | 2002-09-12 | 有源矩阵型液晶显示装置及其制造方法 |
Country Status (1)
Country | Link |
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CN (1) | CN1222813C (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100807277B1 (ko) * | 2006-08-10 | 2008-02-28 | 삼성전자주식회사 | 표시장치와 그 제조방법 |
KR101323477B1 (ko) * | 2009-09-30 | 2013-10-31 | 엘지디스플레이 주식회사 | 액정표시장치 및 그 제조 방법 |
JP5971679B2 (ja) * | 2011-11-21 | 2016-08-17 | 株式会社ジャパンディスプレイ | 液晶表示装置 |
CN102436094B (zh) * | 2011-12-19 | 2014-08-20 | 深圳市华星光电技术有限公司 | 液晶显示装置及其制作方法 |
JP2015090435A (ja) * | 2013-11-06 | 2015-05-11 | 株式会社ジャパンディスプレイ | 液晶表示装置 |
-
2002
- 2002-09-12 CN CN 02131667 patent/CN1222813C/zh not_active Expired - Lifetime
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Publication number | Publication date |
---|---|
CN1482494A (zh) | 2004-03-17 |
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C06 | Publication | ||
PB01 | Publication | ||
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SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: NLT TECHNOLOGIES, LTD. Free format text: FORMER NAME: NEC LCD TECH CORP. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Kanagawa Patentee after: NLT TECHNOLOGIES, Ltd. Address before: Kanagawa Patentee before: NEC LCD Technologies, Ltd. |
|
CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: Kawasaki City, Kanagawa Prefecture, Japan Patentee after: TIANMA JAPAN, Ltd. Address before: Kanagawa Prefecture, Japan Patentee before: NLT TECHNOLOGIES, Ltd. |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20200608 Address after: 1918 Tianma Building, Liuxian Avenue, Beizhan community, Minzhi street, Longhua District, Shenzhen City, Guangdong Province Patentee after: Tianma Micro-Electronics Co.,Ltd. Address before: Kawasaki City, Kanagawa Prefecture, Japan Patentee before: TIANMA JAPAN, Ltd. |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20201207 Address after: Room A-430, 4th Floor, Block A, Phase II, Guangxi Huike Science and Technology Co., Ltd., 336 East Extension Line of Beihai Avenue, Beihai Industrial Park, Guangxi Zhuang Autonomous Region Patentee after: BEIHAI HKC PHOTOELECTRIC TECHNOLOGY Co.,Ltd. Address before: 5-6 / F, building D, huilongda Industrial Park, Shuitian Private Industrial Park, Shiyan street, Bao'an District, Shenzhen City, Guangdong Province Patentee before: Shenzhen Haiyun Communication Co.,Ltd. Effective date of registration: 20201207 Address after: 5-6 / F, building D, huilongda Industrial Park, Shuitian Private Industrial Park, Shiyan street, Bao'an District, Shenzhen City, Guangdong Province Patentee after: Shenzhen Haiyun Communication Co.,Ltd. Address before: 518131 Tianma Building, Liuxian Avenue, Beizhan community, Minzhi street, Longhua District, Shenzhen City, Guangdong Province 1918 Patentee before: Tianma Micro-Electronics Co.,Ltd. |
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CX01 | Expiry of patent term | ||
CX01 | Expiry of patent term |
Granted publication date: 20051012 |