CN1215926A - 高压cmos结构的半导体器件及其制造方法 - Google Patents
高压cmos结构的半导体器件及其制造方法 Download PDFInfo
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- CN1215926A CN1215926A CN98124555A CN98124555A CN1215926A CN 1215926 A CN1215926 A CN 1215926A CN 98124555 A CN98124555 A CN 98124555A CN 98124555 A CN98124555 A CN 98124555A CN 1215926 A CN1215926 A CN 1215926A
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- 239000004065 semiconductor Substances 0.000 title claims description 58
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 238000009792 diffusion process Methods 0.000 claims abstract description 359
- 239000000758 substrate Substances 0.000 claims abstract description 175
- 230000003647 oxidation Effects 0.000 claims description 49
- 238000007254 oxidation reaction Methods 0.000 claims description 49
- 239000012535 impurity Substances 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 29
- 239000000203 mixture Substances 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 9
- 229910052698 phosphorus Inorganic materials 0.000 description 9
- 239000011574 phosphorus Substances 0.000 description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 7
- 229910052796 boron Inorganic materials 0.000 description 7
- 238000005452 bending Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000010276 construction Methods 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
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- 230000004888 barrier function Effects 0.000 description 2
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- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
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- 239000012212 insulator Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66659—Lateral single gate silicon transistors with asymmetry in the channel direction, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (9)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP09295748A JP3111947B2 (ja) | 1997-10-28 | 1997-10-28 | 半導体装置、その製造方法 |
JP295748/97 | 1997-10-28 | ||
JP295748/1997 | 1997-10-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1215926A true CN1215926A (zh) | 1999-05-05 |
CN1135630C CN1135630C (zh) | 2004-01-21 |
Family
ID=17824662
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB981245552A Expired - Fee Related CN1135630C (zh) | 1997-10-28 | 1998-10-28 | 高压cmos结构的半导体器件及其制造方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US6313508B1 (zh) |
JP (1) | JP3111947B2 (zh) |
KR (1) | KR100319506B1 (zh) |
CN (1) | CN1135630C (zh) |
TW (1) | TW400651B (zh) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1331239C (zh) * | 2003-08-15 | 2007-08-08 | 台湾积体电路制造股份有限公司 | 减少漏损的半导体二极管 |
CN101335211B (zh) * | 2007-06-26 | 2010-06-09 | 东部高科股份有限公司 | 侧向dmos器件及其制造方法 |
CN101916780A (zh) * | 2010-07-22 | 2010-12-15 | 中国科学院上海微***与信息技术研究所 | 一种具有多层超结结构的ldmos器件 |
CN101442072B (zh) * | 2007-11-23 | 2011-02-09 | 三洋电机株式会社 | 半导体器件 |
CN101442073B (zh) * | 2007-11-23 | 2011-02-09 | 三洋电机株式会社 | 半导体器件及其制造方法 |
CN102306661A (zh) * | 2011-09-20 | 2012-01-04 | 上海先进半导体制造股份有限公司 | Ldmos晶体管结构及其形成方法 |
US8558307B2 (en) | 2007-12-18 | 2013-10-15 | Sanyo Semiconductor Co., Ltd. | Semiconductor device with diffused MOS transistor and manufacturing method of the same |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6140160A (en) | 1997-07-28 | 2000-10-31 | Micron Technology, Inc. | Method for fabricating a simplified CMOS polysilicon thin film transistor and resulting structure |
KR100534601B1 (ko) * | 1999-08-14 | 2005-12-07 | 한국전자통신연구원 | 제조 공정과 특성 제어가 용이한 전력 집적회로 구조 |
JP2001094094A (ja) * | 1999-09-21 | 2001-04-06 | Hitachi Ltd | 半導体装置およびその製造方法 |
JP3442009B2 (ja) * | 1999-09-24 | 2003-09-02 | 松下電器産業株式会社 | 高耐圧mosトランジスタの構造 |
JP3510576B2 (ja) | 2000-09-28 | 2004-03-29 | Necエレクトロニクス株式会社 | 半導体装置及びその製造方法 |
JP4471480B2 (ja) * | 2000-10-18 | 2010-06-02 | 三菱電機株式会社 | 半導体装置 |
JP4176342B2 (ja) * | 2001-10-29 | 2008-11-05 | 川崎マイクロエレクトロニクス株式会社 | 半導体装置およびそのレイアウト方法 |
US6780762B2 (en) * | 2002-08-29 | 2004-08-24 | Micron Technology, Inc. | Self-aligned, integrated circuit contact and formation method |
CN1268005C (zh) | 2002-10-24 | 2006-08-02 | 松下电器产业株式会社 | 半导体装置及其制造方法 |
WO2004107383A1 (ja) * | 2003-01-09 | 2004-12-09 | Matsushita Electric Industrial Co., Ltd. | Misfet |
KR100487950B1 (ko) * | 2003-02-03 | 2005-05-06 | 삼성전자주식회사 | 활성영역과 중첩되는 게이트 전극 상에 배치된 콘택홀을갖는 반도체 소자 |
JP3689420B1 (ja) * | 2004-03-29 | 2005-08-31 | 新電元工業株式会社 | 半導体装置 |
KR100614806B1 (ko) | 2004-10-27 | 2006-08-22 | 삼성전자주식회사 | 고내압 트랜지스터 및 이의 제조 방법 |
JP4471815B2 (ja) * | 2004-11-05 | 2010-06-02 | 日本テキサス・インスツルメンツ株式会社 | 半導体装置およびその製造方法 |
JP2006324346A (ja) * | 2005-05-17 | 2006-11-30 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
US7174693B2 (en) * | 2005-07-15 | 2007-02-13 | Diamond Machine Works, Inc. | Article portioning head system |
JP4989085B2 (ja) * | 2006-02-24 | 2012-08-01 | オンセミコンダクター・トレーディング・リミテッド | 半導体装置及びその製造方法 |
KR100773104B1 (ko) * | 2006-07-11 | 2007-11-02 | 김종국 | 넝쿨작물 재배장치 |
JP5479671B2 (ja) | 2007-09-10 | 2014-04-23 | ローム株式会社 | 半導体装置 |
US7560774B1 (en) * | 2008-01-23 | 2009-07-14 | United Microelectronics Corp. | IC chip |
US8049307B2 (en) * | 2009-01-23 | 2011-11-01 | Vanguard International Semiconductor Corporation | Insulated gate bipolar transistor (IGBT) electrostatic discharge (ESD) protection devices |
JP5729745B2 (ja) * | 2009-09-15 | 2015-06-03 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP6061979B2 (ja) * | 2015-04-16 | 2017-01-18 | ローム株式会社 | 半導体装置 |
KR102154991B1 (ko) | 2018-09-04 | 2020-09-11 | 경북대학교 산학협력단 | 넝쿨작물 자중에 의한 유인줄 자동 길이조절장치 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE897139A (nl) * | 1983-06-27 | 1983-12-27 | Bell Telephone Mfg Cy Nov | Proces voor het maken van een halfgeleider-inrichting en inrichting hierdoor verkregen |
US5923071A (en) * | 1992-06-12 | 1999-07-13 | Seiko Instruments Inc. | Semiconductor device having a semiconductor film of low oxygen concentration |
US5874768A (en) * | 1994-06-15 | 1999-02-23 | Nippondenso Co., Ltd. | Semiconductor device having a high breakdown voltage |
JPH08148684A (ja) | 1994-11-18 | 1996-06-07 | Nippondenso Co Ltd | 半導体装置及びその製造方法 |
JPH08335684A (ja) * | 1995-06-08 | 1996-12-17 | Toshiba Corp | 半導体装置 |
JP3435930B2 (ja) * | 1995-09-28 | 2003-08-11 | 株式会社デンソー | 半導体装置及びその製造方法 |
US6242787B1 (en) * | 1995-11-15 | 2001-06-05 | Denso Corporation | Semiconductor device and manufacturing method thereof |
JP3378135B2 (ja) * | 1996-02-02 | 2003-02-17 | 三菱電機株式会社 | 半導体装置とその製造方法 |
JP3575908B2 (ja) * | 1996-03-28 | 2004-10-13 | 株式会社東芝 | 半導体装置 |
KR100225411B1 (ko) * | 1997-03-24 | 1999-10-15 | 김덕중 | LDMOS(a lateral double-diffused MOS) 트랜지스터 소자 및 그의 제조 방법 |
JPH11195712A (ja) * | 1997-11-05 | 1999-07-21 | Denso Corp | 半導体装置およびその製造方法 |
-
1997
- 1997-10-28 JP JP09295748A patent/JP3111947B2/ja not_active Expired - Fee Related
-
1998
- 1998-10-20 TW TW087117308A patent/TW400651B/zh not_active IP Right Cessation
- 1998-10-27 KR KR1019980044990A patent/KR100319506B1/ko not_active IP Right Cessation
- 1998-10-28 US US09/179,851 patent/US6313508B1/en not_active Expired - Lifetime
- 1998-10-28 CN CNB981245552A patent/CN1135630C/zh not_active Expired - Fee Related
-
2001
- 2001-09-28 US US09/964,393 patent/US6638798B2/en not_active Expired - Lifetime
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1331239C (zh) * | 2003-08-15 | 2007-08-08 | 台湾积体电路制造股份有限公司 | 减少漏损的半导体二极管 |
CN101335211B (zh) * | 2007-06-26 | 2010-06-09 | 东部高科股份有限公司 | 侧向dmos器件及其制造方法 |
CN101442072B (zh) * | 2007-11-23 | 2011-02-09 | 三洋电机株式会社 | 半导体器件 |
CN101442073B (zh) * | 2007-11-23 | 2011-02-09 | 三洋电机株式会社 | 半导体器件及其制造方法 |
US8558307B2 (en) | 2007-12-18 | 2013-10-15 | Sanyo Semiconductor Co., Ltd. | Semiconductor device with diffused MOS transistor and manufacturing method of the same |
CN101916780A (zh) * | 2010-07-22 | 2010-12-15 | 中国科学院上海微***与信息技术研究所 | 一种具有多层超结结构的ldmos器件 |
CN102306661A (zh) * | 2011-09-20 | 2012-01-04 | 上海先进半导体制造股份有限公司 | Ldmos晶体管结构及其形成方法 |
Also Published As
Publication number | Publication date |
---|---|
CN1135630C (zh) | 2004-01-21 |
US6638798B2 (en) | 2003-10-28 |
JPH11135794A (ja) | 1999-05-21 |
KR19990037412A (ko) | 1999-05-25 |
KR100319506B1 (ko) | 2002-06-20 |
TW400651B (en) | 2000-08-01 |
JP3111947B2 (ja) | 2000-11-27 |
US6313508B1 (en) | 2001-11-06 |
US20020048914A1 (en) | 2002-04-25 |
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Owner name: RENESAS KANSAI CO., LTD. Free format text: FORMER NAME: NEC CORP. |
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Address after: Kawasaki, Kanagawa, Japan Patentee after: Renesas Electronics Corporation Address before: Kawasaki, Kanagawa, Japan Patentee before: NEC Corp. |
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