CN1196654A - 加热器－传感器复合装置 - Google Patents

加热器－传感器复合装置 Download PDF

Info

Publication number
CN1196654A
CN1196654A CN98105582A CN98105582A CN1196654A CN 1196654 A CN1196654 A CN 1196654A CN 98105582 A CN98105582 A CN 98105582A CN 98105582 A CN98105582 A CN 98105582A CN 1196654 A CN1196654 A CN 1196654A
Authority
CN
China
Prior art keywords
heater
metal material
heating element
temperature
sensor complex
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN98105582A
Other languages
English (en)
Other versions
CN1133353C (zh
Inventor
宫崎充彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hakko Corp
Original Assignee
Hakko Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hakko Corp filed Critical Hakko Corp
Publication of CN1196654A publication Critical patent/CN1196654A/zh
Application granted granted Critical
Publication of CN1133353C publication Critical patent/CN1133353C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/02—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using thermoelectric elements, e.g. thermocouples
    • G01K7/08—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using thermoelectric elements, e.g. thermocouples the object to be measured forming one of the thermoelectric materials, e.g. pointed type
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K3/00—Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
    • B23K3/02—Soldering irons; Bits
    • B23K3/03—Soldering irons; Bits electrically heated
    • B23K3/033—Soldering irons; Bits electrically heated comprising means for controlling or selecting the temperature or power
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K3/00—Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
    • B23K3/04—Heating appliances
    • B23K3/047—Heating appliances electric
    • B23K3/0478—Heating appliances electric comprising means for controlling or selecting the temperature or power
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • G05D23/1906—Control of temperature characterised by the use of electric means using an analogue comparing device
    • G05D23/1913—Control of temperature characterised by the use of electric means using an analogue comparing device delivering a series of pulses
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/40—Heating elements having the shape of rods or tubes
    • H05B3/42—Heating elements having the shape of rods or tubes non-flexible
    • H05B3/44—Heating elements having the shape of rods or tubes non-flexible heating conductor arranged within rods or tubes of insulating material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/40—Heating elements having the shape of rods or tubes
    • H05B3/42—Heating elements having the shape of rods or tubes non-flexible
    • H05B3/46—Heating elements having the shape of rods or tubes non-flexible heating conductor mounted on insulating base

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Resistance Heating (AREA)
  • Resistance Heating (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
  • Investigating Or Analyzing Materials Using Thermal Means (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)

Abstract

本发明涉及一种加热器－传感器复合装置,其中一种铁－铬合金电热材料和一种镍或镍－铬合金组成一个热电偶。采用这种加热器－传感器复合装置,可以方便且精确地检测出钎焊烙铁的尖端温度。

Description

加热器-传感器复合装置
本发明涉及一种双引线型加热器-传感器复合装置，包括集成在一起的一个加热器单元和一个传感器单元。本发明尤其涉及一种适合用于钎焊烙铁的热输入的加热器-传感器复合装置。
参照表示钎焊烙铁的尖端的图11，一个棒形的陶瓷加热元件51被嵌入钎焊烙铁的尖端部分52。这一陶瓷加热元件51包括一个卷绕在一个陶瓷芯棒上的未烧结(green)的陶瓷片53。未烧结的陶瓷片53已被印制出加热器和传感器的图案。这些图案的拓扑关系可以，例如，如图12所示。在这一实例中，传感器图案55采用钨胶印制成宽度为0.2mm的图案，而加热器图案54采用钨胶环绕上述传感器图案55印制成宽度为0.4mm的图案。传感器图案55向后延伸穿过加热器图案54并与传感器电极56相连，而加热器图案54和位于上述传感器电极56前方的加热器电极57相连。
然而，图11和12中表示出的装有传感器的陶瓷加热器也有缺点，由于它带有四根引线，上述芯棒的外径不能减至小于3.5mm。这样，如果钎焊烙铁需要减小尺寸，由于引线在管理上的自由度的限制，管径就不能被更进一步地减小。由于传感器被装在陶瓷芯棒的圆周表面，钎焊烙铁尖端温度不能被精确地检测到，这也是一个缺点。而且，钎焊烙铁尖端温度的检测，与阻抗值随温度的变化有关，所描述的钎焊烙铁也不例外，这种情况下在产品中必须有一个相当的变动量以便每个产品都必须被调整在允许的容差极限内。
然而，也提供一个以这样的方式装配的加热器-传感器：一根电热丝被直接绕在一根陶瓷芯棒上，然后敷上一层陶瓷涂层，以保证必要的绝缘性能从而代替了将未烧结的陶瓷片缠在陶瓷芯棒上。
然而，这样的一个加热器具有如下缺点：当陶瓷涂层含有紧实精细陶瓷微粒时，由于与陶瓷涂层的热膨胀系数相比电热丝具有相对较高的热膨胀系数，所以涂层易于产生裂纹。另一方面，如果将粗糙的陶瓷微粒用于上述陶瓷涂层，绝缘电阻的降低会引起对工作负载，例如一个基片的电流泄漏。
为实现其目标，通过设计来克服现有技术的上述缺点，本发明提供有一种加热器-传感器复合装置，尽管其结构简单，却不仅能精确检测出钎焊烙铁的尖端温度，而且能确保完全绝缘，而不存在绝缘层内产生裂纹的危险。
为实现上述目标所开发的本发明涉及一个加热器-传感器复合装置，包括一个由第一金属材料制成的加热元件、一个由所述第一金属材料制成的非加热元件，和一个由一种第二金属材料制成的非加热元件。由所述第一金属材料制成的所述加热元件，被焊到由所述第二金属材料制成的所述非加热元件的前端，所述第一金属材料是一种电热铁-铬合金，而所述第二金属材料是一种镍或镍-铬合金，由此在其间形成了热电偶。
由所述第一金属材料制成的所述加热元件最好是一根相对较小直径的金属丝，以线圈的形式绕在一个柱状的绝缘管上，并且与由所述第一金属材料制成的所述非加热元件相连接，该元件是直线型的具有相对较大直径的金属丝，并与所述绝缘管的柱形表面紧固；而由所述第二金属材料制成的所述非加热元件，是一个穿过上述绝缘管内腔的直线型元件。
依照本发明，由于采用了一种铁-铬合金电热材料与一种镍或镍-铬合金相结合组成一种热电偶，就能以一种简单的方式精确地检测出钎焊烙铁的尖端温度。
图1是一个示意图，表示出体现本发明原理的一个加热器-传感器复合装置的基本结构。
图2是一个视图，表示出图1中所示的加热器-传感器复合装置，被装在一个绝缘管中以形成一层绝缘层。
图3是一个曲线图，表示出图1中所示的加热器-传感器复合装置的温度分布。
图4是一个曲线图，表示出图1中所示的加热器-传感器复合装置的热电动势的特性。
图5是一个视图，表示出图2中所示的加热器-传感器复合装置与保护管的几何关系。
图6是一个视图，表示出钎焊烙铁的整体形状。
图7是一个剖面图，表示出钎焊烙铁的结构。
图8是一个框图，表示出钎焊烙铁的温度控制电路的一部分。
图9是一个框图，表示出同一温度控制电路的其余部分。
图10是一个时序图，表示出图8中所示的控制电路的各部分的波形。
图11是一个视图，表示出常规钎焊烙铁的结构。
图12是一个视图，表示出加热器图案和传感器图案。
现在将参照附图的几个视图中所示的优选实施例更详细地描述本发明。
如图1和2所示，根据本发明，钎焊烙铁加热器的主要部分包括一个带有一个沿轴向的内腔1a的柱形绝缘管1，以及一个装在其上的加热器-传感器复合装置2。绝缘管1可以，例如，是一个氧化铝管。
参照表示出加热器-传感器复合装置的图1，线圈形加热丝3的尖端3a通过氩弧焊与直线型非加热丝4的尖端4a焊接。加热丝3的端部3b与直线型的非加热丝5焊接。加热丝3由铁-铬合金制成。合金组分的典型实例如表1中所示。
                       表1
          Cr        Al       Mn         C        Fe
第1种    23-27    3.5-5.5    ≤1.0    ≤0.15    余额
第2种    17-21      2-4      ≤1.0    ≤0.15    余额
在这些铁-铬合金中，最好采用Kanthal D(由Kanthal公司制造的一种Kanthal丝)。其主要的组成元素的比例为Cr＝22.0而Al＝4.8。也可以采用可供选择的组分：Cr＝22.0，Al＝5.8；Cr＝22.0，Al＝5.3；以及Cr＝20.0，Al＝4.0。
在这一实施例中，非加热丝4由镍制成，而非加热丝5和加热丝3由相同的Kanthal D合金制成。然而，为了防止在非加热丝5中产生热量，非加热丝5的直径大约为加热丝3的直径的2.5倍。
当上述结构的加热器-传感器复合装置2被供给电流时，加热丝3产生热量，从而在理论上得到图3(b)中所示的温度分布。因此，尽管非加热丝4、5的端部4b、5b的温度大体相同并等于T0，氩弧焊点4a、3a的温度为T1，而加热丝3的中央部分则达到一个很高的温度。Kanthal丝(3、5)和Ni丝(4)组成一个热电偶，这样，假定Ni丝的塞贝克系数为α，而Kanthal丝的塞贝克系数为β，则在非加热丝4的端部4b与非加热丝5(Kanthal丝)的端部5b之间会产生电动势
α(T1-T0)-β(T1-T0)
由于α和β的符号不同，非加热丝4、5的电动势互相迭加。非加热丝5的尖端部分5a的温度随着加热丝3的温度的增益而升高，因此，假定将Ni丝选作非加热丝5，则非加热丝4、5的端部4b、5b之间的电动势会降低。
            表2(单位：mV)
温度      0       100      200      300      400
 0        0      1.731    3.622    6.332    8.410
 10     0.175    1.939    3.830    6.521    8.626
 20     0.381    2.079    4.044    6.724    8.849
 30     0.587    2.265    4.400    6.929    9.060
 40     0.804    2.470    4.691    7.132    9.271
 50     1.005    2.676    4.989    7.356    9.531
 60     1.007    2.899    5.289    7.561    9.748
 70     1.107    3.081    5.583    7.774    10.210
 80     1.310    3.186    5.879    7.992    10.219
 90     1.522    3.422    6.075    8.200    10.429
 100    1.731    3.622    6.332    8.410    10.649
表2表示出加热器-传感器复合装置2的实测特性。这样，氩弧焊点3a、4a的温度从0℃升至500℃，测量出来非加热丝的端部4b、5b的电压值。从表2可以看出，在通常用于钎焊烙铁的温度范围200℃-450℃内可以获得很好的线性，而且传感器的输出也在实际应用的水平。图4是一个曲线图，比较了加热器-传感器复合装置2(B)的输出特性和热电偶K(A)的特性，它表明加热器-传感器复合装置2的电动势大约为热电偶K的电动势的一半。从图中可以看出，采用这一加热器-传感器复合装置2，直至600℃仍可获得稳定的传感器输出，这表明这种加热器-传感器复合装置2不仅可以用作钎焊烙铁的温度传感器，而且可以用于其它应用。
现在描述根据本发明的钎焊烙铁加热器的制造方法。首先，将非加热丝4穿过绝缘管1的内腔1a，并将加热丝3缠在绝缘管1的圆周表面。然后，利用一根包括有一根Kanthal丝的固定丝6，将非加热丝5固定到绝缘管1的外周上(图2)。
其后，采用浸渍涂层技术在氩弧焊点3a、4a、加热丝3以及固定丝6上涂上第一陶瓷涂层7，并且将所敷涂层7干燥并烧结。上述的第一陶瓷涂层7是一种含水的分散体，包括粘结剂和粗级的氧化铝粉，而且当所敷涂层经干燥和烧结后，氩弧焊点3a、4a及加热丝3被紧固到绝缘管1上。由于这一陶瓷涂层7是粗糙颗粒的分散体，所以它有效地吸收了绝缘管1与加热丝3之间热膨胀系数的差异，使得在使用中不会发生裂纹或劈裂。
然后，采用浸渍涂层技术涂上第二陶瓷涂层8，并经干燥和烧结。同时，利用这一陶瓷涂层8，将加热器-传感器复合装置2固定在钎焊烙铁的尖端部分9中形成的凹槽9a中(图5)。当然，钎焊烙铁的尖端9是由具有良好导热性的材料制成的。
第二陶瓷涂层8是一种特定的含水分散体，包括粘结剂和细氧化铝粉，当这一涂层经干燥及烧结后，就得到了一层绝对的绝缘层。此外，通过该第二陶瓷涂层8，加热器-传感器复合装置2被紧固在钎焊烙铁的尖端部分9。
由于在本发明的加热器-传感器复合装置2中，非加热丝4与环绕它的绝缘管1的内腔之间有一段自由的气隙，非加热丝4大体上对加热丝3的温度不敏感。而且，由于非加热丝4是抗氧化腐蚀的Ni丝，所以它能暴露接触空气。
在加热器-传感器复合装置2被紧固安装在钎焊烙铁的尖端部分9的凹槽9a内之后，保护管10被固定到其端部的尖端部分9的圆周上(图5)。此外，一个合成树脂元件(引线部分)11被配合安装在保护管10的基座处，接线端12、13伸出到合成树脂元件之外，结果，总体上形成了一个集成的钎焊烙铁加热器(图6)。通过将上述接线端12、13与相应连接器连接或分离，可将这种钎焊烙铁加热器安装或拆卸。如图7中所示，保护管10的基座侧面被一个夹持元件14紧紧夹住，而且与接线端12、13紧邻，还设置有一个用于温度测量的热敏电阻器TH。
图8和9表示出包含有加热器-传感器复合装置2的温度控制电路。所示的温度电路主要包括用于加热钎焊烙铁的尖端，并检测其尖端温度T1的所述加热器-传感器复合装置2、用于检测加热器-传感器复合装置2的基座端部温度T0的所述热敏电阻TH、一个用于加热器-传感器复合装置2的电源模块15、一个用于放大来自加热器-传感器复合装置2的热电偶输出的放大模块16、一个用于将热电偶输出与热敏电阻输出相迭加的加法器模块17、一个用于对直流电压(图9，该电压加到后续元件上)整流的全波整流器18、一个零交叉脉冲发生器19、一个用于设定钎焊烙铁的尖端温度的温度设定模块20，以及一个用于控制全部操作的微处理器单元21。计算出的尖端温度显示在与微处理器单元21相连接的显示器22上。
在这一实施例中，微处理器单元21具体是一个单片微处理器M37470(Mitsubishi)。这种微处理器单元21提供有输出端、端口1和端口2，而且如此设置：电源模块15根据端口1的输出数据被控制为开或关，而加法器17的输出端的开关SW根据端口2的输出数据被控制为开或关。
此外，微处理器单元21提供有与一个数/模转换器相连的模拟输入端ADIN1和ADIN2。来自加法器模块17的输出值被输入模拟输入端ADIN1，而对应于设定温度的电压值被输入模拟输入端ADIN2。微处理器单元的模拟输入端VREF已经被输入用于数/模转换器的参考电压(例如，2.55V)，由此确定了数/模转换器的分辨率。
微处理器单元21还设置有一个中断端口INT，与零交叉脉冲发生器19相连，以便当全波整流脉冲电流值已经达到0V时，向微处理器单元21发出一个中断信号，然后开始中断程序。
如图8中所示，电源模块15包括一个场效应管FET1和一个与场效应管FET1的门端相连的电阻R1。场效应管FET1的漏端与全波整流器18+V的输出端(例如，波峰值＝2.4V)相连，而源端与加热器-传感器复合装置2相连。
放大器16包括一个限流电阻R2、二极管D1、D2、一个同相放大器A0、电阻R3、R4，可以实现放大系数大约为250、一个反向放大器A1以及电阻R5、R6。根据这一电路，加热器-传感器2的传感器电压被放大至250倍，而其相位被所述同相放大器A0和反向放大器A1反向。电阻值可以为，例如，R3＝1KΩ，R4＝250KΩ，而R5＝R6＝100KΩ。
在这一电路中，由于同相放大器A0的源电压是+VDD和-VDD(例如，±5V)，加在同相放大器A0上的电压若超过+VDD～-VDD的范围则会导致特性变坏甚至击穿。因此，设置有限压二极管D1、D2使得只有+VDD+VF～-VDD-VF范围内的电压才可以加到同相放大器A0上。需要指出的是VF是二极管D1、D2的正向电压。
现在，当场效应管FET1为开时，电压V-VDD-VF被加到电阻R2上，但是由于电阻R2的电阻值被设为大约10KΩ，所以最大只有大约2mA的电流。相反，当场效应管FET1为关时，加热器-传感器复合装置2的热电偶的输出被加到电阻R2上，使得电阻R2上的压降会出现问题。然而，在本发明中，由于通过同相放大器A0实现放大，其输入阻抗Rin足够大满足条件Rin＞＞R2，从而使得可以检测出精确的热电偶输出。如果采用一个反向放大器用于这一放大，条件Rin＞＞R2可能不会满足。
加法器模块17主要包括一个反向放大器A2和电阻R7、R8、R11，及R13。电阻R10与热敏电阻TH并联，而源电压+VDD通过R9输入。电阻值可以，例如，为：R7＝R8＝100KΩ，R11＝R13＝47KΩ，R9＝220KΩ，以及R10＝50KΩ。在加法器模块17与微处理器单元21之间设置有由输出端PORT2控制的开启-闭合开关SW(图9)。
在加法器模块17中，来自反向放大器A1的输入通过电阻R7被加到反向放大器A2上，而来自热敏电阻TH的输入通过电阻R11被提供给放大器A2。此外，由电阻R12和可变电阻VR1将源电压-VDD分压得到的电压，通过电阻R13被提供给反向放大器A2。
由于反向放大器A2的输出被加到微处理器单元21的数/模转换器上，不管加热器-传感器复合装置2和热敏电阻TH的输出电压随温度如何变化，反向放大器A2的输出都必须稳定保持在正数范围内。因此，在本发明中，调整可变电阻VR1使反向放大器A2的输出始终在0V～2.55V的范围内。
如图9所示，温度设定模块20包括电阻器R14、R15、缓冲器A3，及可变电阻器VR2。当参考电压VREF被加到可变电阻器VR2上时，如此设置可以通过操纵可变电阻器VR2将与所设置的200℃-450℃温度相对应的电压加到微处理器单元的模拟输入端AIN2。
现在参照图10的时序图描述图8和图9中的控制电路的工作。图10表示出全波整流电路的输出(A)、零交叉脉冲发生器的输出(B)、模拟输入端AIN1的输入(C)、输出端口PORT1的输出(D)，以及加热器-传感器复合装置2的接线端电压(E)。
当全波整流电路18的输出值变为零，而零交叉脉冲发生器19的输出增加时，微处理器单元21被加在中断端口INT处的脉冲信号中断。在中断程序中，微处理器单元21首先向输出端口PORT1、PORT2输出一个控制信号，将场效应管FET1设为关的状态，并将开启-关闭开关SW1设到开的位置。
当场效应管FET1被设为关的状态时，供给加热器-传感器2的电流被中断，使得在加热器-传感器联合装置2的两端只呈现热电偶输出。这一热电偶输出值对应于尖端温度T1与基部(4b、5b)温度T0的温差T1-T0，并且这一热电偶的输出在放大模块16中被放大250倍，并被加到加法器模块17的电阻R5上。另一方面，将一个对应于热敏电阻TH1的电阻值的电压加到加法器模块17中的电阻R7上，而热敏电阻TH1的电阻值随传感器-加热器复合装置2的基部4b、5b的温度T0变化。因此，加法器模块17输出一个对应于钎焊烙铁尖端温度T1的电压。由于这时开启-关闭开关SW1处于开的状态，所以这一对应于尖端温度T1的电压，被从所述模拟输入端口ADIN1提供给微处理器单元21。
同时，对应于设定温度TS的电压已从模拟输入端ADIN2输入。因此，微处理器单元21将模拟输入端ADIN1的电压与模拟输入端ADIN2的电压相比较，计算出当前的尖端温度TP是否比设定的温度值TS要高。
现在，当中断脉冲(图10(B))不晚于初始的第三个脉冲时，意味着尖端温度TP低于设定温度值TS。在TP＜TS的条件下，微处理器单元21通过输出端口PORT2将开启-关闭开关SW1设为关，并通过输出端口PORT1设定场效应管FET1为开以终止中断程序。然后，由于场效应管FET1已被设为开，全波整流模块18的输出就如此提供给传感器-加热器2，以向加热器供给能量，提高钎焊烙铁的尖端温度。
参照图10的脉冲波形图，当中断脉冲不晚于第一个第三脉冲时，重复如上相同操作，以使尖端温度TP升高。响应尖端温度的这一提高，模拟输入端ADIN1的输入被增大。
然而，当中断脉冲为第四个或其后的某一个时，意味着钎焊烙铁的尖端温度TP高于设定温度TS(TP＞TS)，从而微处理器单元21通过输出端PORT1、PORT2将开启-关闭开关SW1和场效应管FET1置于关的状态，从而终止中断程序。当场效应管FET1被这样设为关时，即便在中断程序完成以后，电源模块15仍继续终止向传感器-加热器复合装置2提供电流，以使钎焊烙铁尖端温度不断下降。然后，当尖端温度TP降至设定值TS以下时(TP＜TS)，电源模块15恢复向加热器-传感器2提供电流。

Claims (2)

1、一种加热器-传感器复合装置，包括一个由第一金属材料制成的加热元件、由同样的第一金属材料制成的非加热元件，以及由第二金属材料制成的非加热元件，
由所述第一金属材料制成的所述加热元件，与由所述第二金属材料制成的所述非加热元件的前端相连，
所述第一金属材料是一种电热铁-铬合金，而所述第二金属材料是一种镍或镍-铬合金，从而在其间形成一个热电偶。
2、根据权利要求1的加热器-传感器复合装置，其中由所述第一金属材料制成的所述加热元件，包括一根相对较小直径的金属丝，其以线圈的形式缠绕在一个柱形绝缘管上，并与由同样的第一金属材料制成的所述非加热元件相连，该非加热元件是直线型的相对较大直径的金属丝，并与所述绝缘管的园周表面紧固，
由所述第二金属材料制成的所述非加热元件是一个穿入所述绝缘管的内腔的直线型元件。
CN98105582A 1997-03-14 1998-03-13 加热器－传感器复合装置 Expired - Lifetime CN1133353C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP09082238A JP3124506B2 (ja) 1997-03-14 1997-03-14 ヒータ・センサ複合体
JP82238/97 1997-03-14
JP82238/1997 1997-03-14

Publications (2)

Publication Number Publication Date
CN1196654A true CN1196654A (zh) 1998-10-21
CN1133353C CN1133353C (zh) 2003-12-31

Family

ID=13768841

Family Applications (1)

Application Number Title Priority Date Filing Date
CN98105582A Expired - Lifetime CN1133353C (zh) 1997-03-14 1998-03-13 加热器－传感器复合装置

Country Status (14)

Country Link
US (1) US6054678A (zh)
JP (1) JP3124506B2 (zh)
KR (1) KR100506023B1 (zh)
CN (1) CN1133353C (zh)
CA (1) CA2231924C (zh)
DE (1) DE19810519C2 (zh)
ES (1) ES2144947B1 (zh)
FR (1) FR2760931B1 (zh)
GB (1) GB2325840B (zh)
HK (1) HK1015115A1 (zh)
ID (1) ID20052A (zh)
IT (1) IT1299379B1 (zh)
MY (1) MY121720A (zh)
TW (1) TW441218B (zh)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100418687C (zh) * 2005-06-24 2008-09-17 深圳斯贝克动力电子有限公司 电烙铁及其温度控制方法
CN101493707B (zh) * 2008-01-21 2011-03-23 同方威视技术股份有限公司 闭环温度控制加热电路
CN102009243A (zh) * 2010-10-27 2011-04-13 华东交通大学 一种定热量电烙铁装置及控制方法
CN102090141A (zh) * 2008-02-26 2011-06-08 阿雷瓦核能有限责任公司 电加热元件
CN103180703A (zh) * 2010-09-07 2013-06-26 斯通瑞智公司 温度传感器
CN103207028A (zh) * 2012-01-17 2013-07-17 太洋电机产业株式会社 烙铁头温度测量装置及用于其的温度传感器
CN104577239A (zh) * 2013-10-17 2015-04-29 福特全球技术公司 电动车辆的电池热电偶
CN106687244A (zh) * 2014-05-28 2017-05-17 白光株式会社 加热器传感器分组件及钎焊卡式件
CN106914674A (zh) * 2015-12-28 2017-07-04 太洋电机产业株式会社 烙铁
CN107852778A (zh) * 2015-05-29 2018-03-27 沃特洛电气制造公司 具有温度感测功率引脚的电阻加热器
CN108770103A (zh) * 2018-06-08 2018-11-06 宁波兴慈热动电器有限公司 电子调温器用电子加热器
WO2021168961A1 (zh) * 2020-02-27 2021-09-02 南京科润工业介质股份有限公司 一种淬火介质热稳定性的测试装置
WO2021168960A1 (zh) * 2020-02-27 2021-09-02 南京科润工业介质股份有限公司 一种淬火介质冷却性能的在线监测***

Families Citing this family (334)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7135584B2 (en) * 1995-08-07 2006-11-14 Wake Forest University Lipid analogs for treating viral infections
US6632017B1 (en) * 1999-04-28 2003-10-14 Steven B. Cress Thermocouple method and apparatas
KR20020001405A (ko) * 2000-06-28 2002-01-09 윤동한 디지털 전기 인두기 및 그의 온도 제어 방법
US6486442B2 (en) * 2000-10-12 2002-11-26 Hotset Corporation Heating device with electric heating element and thermocouple
DE10214166A1 (de) * 2002-03-28 2003-10-23 David & Baader Gmbh Heizflansch, insbesondere zum Vorwärmen von Luft in einer Ansaugleitung einer Brennkraftmaschine
US6793114B2 (en) 2002-04-05 2004-09-21 Pace, Incorporated Soldering heater cartridge with replaceable tips and soldering iron for use therewith
US7030339B2 (en) * 2002-11-26 2006-04-18 Hakko Corporation Soldering iron tip with metal particle sintered member connected to heat conducting core
US20050011876A1 (en) * 2002-11-26 2005-01-20 Takashi Uetani Soldering iron with replaceable tip cap
US8237091B2 (en) * 2002-11-26 2012-08-07 Hakko Corporation Soldering iron with replaceable tip
US7044354B2 (en) * 2003-04-01 2006-05-16 Hakko Corporation Soldering system with indicator lights displaying system status
CN1575900A (zh) * 2003-07-04 2005-02-09 白光株式会社 焊料加热工具
US7608805B2 (en) * 2005-01-14 2009-10-27 Hakko Corporation Control system for battery powered heating device
ATE491673T1 (de) * 2005-03-31 2011-01-15 Ashland Licensing & Intellectu Vorrichtung zur überwachung des fouling von wässrigen systemen
DE102005054521A1 (de) * 2005-11-14 2007-05-24 Ersa Gmbh Lötvorrichtung mit rechnerbasiertem Sensorsystem
US7807949B2 (en) * 2006-02-28 2010-10-05 Hakko Corporation Locking mechanism for soldering iron
EP1843138B1 (en) * 2006-04-06 2012-05-16 Sauer-Danfoss ApS A bolt having a layer of conducting material forming a sensor
EP2073741A4 (en) * 2006-10-18 2013-07-24 Bnl Biotech Co Ltd ENDODONTIC INSTRUMENT FOR SHUTDOWN OF RADICULAR CHANNEL AND HEATED END SUITABLE FOR THIS INSTRUMENT
CN101334430B (zh) * 2007-06-29 2012-07-18 吴伟 一种高精确度电流检测和温度在线检测装置及其采样方法
US7699208B2 (en) * 2007-11-30 2010-04-20 Nordson Corporation Soldering tip, soldering iron, and soldering system
US10378106B2 (en) 2008-11-14 2019-08-13 Asm Ip Holding B.V. Method of forming insulation film by modified PEALD
US9394608B2 (en) 2009-04-06 2016-07-19 Asm America, Inc. Semiconductor processing reactor and components thereof
US9297705B2 (en) 2009-05-06 2016-03-29 Asm America, Inc. Smart temperature measuring device
US8382370B2 (en) * 2009-05-06 2013-02-26 Asm America, Inc. Thermocouple assembly with guarded thermocouple junction
US8802201B2 (en) 2009-08-14 2014-08-12 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
CN101658969A (zh) * 2009-09-25 2010-03-03 深圳市欣力通科技有限公司 一种焊锡机
DE102010002608A1 (de) 2009-12-29 2011-06-30 Endress + Hauser GmbH + Co. KG, 79689 Vorrichtung zur Bestimmung mindestens einer Prozessgröße
US8840301B2 (en) * 2010-06-08 2014-09-23 Analysis & Measurement Services Corporation Diverse and redundant resistance temperature detector
ES2409116T3 (es) * 2010-09-23 2013-06-25 Andreas Massold Procedimiento para la medición de temperatura en un vehículo.
US9312155B2 (en) 2011-06-06 2016-04-12 Asm Japan K.K. High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules
US10364496B2 (en) 2011-06-27 2019-07-30 Asm Ip Holding B.V. Dual section module having shared and unshared mass flow controllers
US10854498B2 (en) 2011-07-15 2020-12-01 Asm Ip Holding B.V. Wafer-supporting device and method for producing same
US20130023129A1 (en) 2011-07-20 2013-01-24 Asm America, Inc. Pressure transmitter for a semiconductor processing environment
US9017481B1 (en) 2011-10-28 2015-04-28 Asm America, Inc. Process feed management for semiconductor substrate processing
US9659799B2 (en) 2012-08-28 2017-05-23 Asm Ip Holding B.V. Systems and methods for dynamic semiconductor process scheduling
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
US20160376700A1 (en) 2013-02-01 2016-12-29 Asm Ip Holding B.V. System for treatment of deposition reactor
US9589770B2 (en) 2013-03-08 2017-03-07 Asm Ip Holding B.V. Method and systems for in-situ formation of intermediate reactive species
US9484191B2 (en) 2013-03-08 2016-11-01 Asm Ip Holding B.V. Pulsed remote plasma method and system
US9240412B2 (en) 2013-09-27 2016-01-19 Asm Ip Holding B.V. Semiconductor structure and device and methods of forming same using selective epitaxial process
US10683571B2 (en) 2014-02-25 2020-06-16 Asm Ip Holding B.V. Gas supply manifold and method of supplying gases to chamber using same
US10167557B2 (en) 2014-03-18 2019-01-01 Asm Ip Holding B.V. Gas distribution system, reactor including the system, and methods of using the same
US11015245B2 (en) 2014-03-19 2021-05-25 Asm Ip Holding B.V. Gas-phase reactor and system having exhaust plenum and components thereof
US10858737B2 (en) 2014-07-28 2020-12-08 Asm Ip Holding B.V. Showerhead assembly and components thereof
US9890456B2 (en) 2014-08-21 2018-02-13 Asm Ip Holding B.V. Method and system for in situ formation of gas-phase compounds
US10941490B2 (en) 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
US9657845B2 (en) 2014-10-07 2017-05-23 Asm Ip Holding B.V. Variable conductance gas distribution apparatus and method
KR102263121B1 (ko) 2014-12-22 2021-06-09 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 및 그 제조 방법
US10529542B2 (en) 2015-03-11 2020-01-07 Asm Ip Holdings B.V. Cross-flow reactor and method
US10276355B2 (en) 2015-03-12 2019-04-30 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
US10458018B2 (en) 2015-06-26 2019-10-29 Asm Ip Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
US10600673B2 (en) 2015-07-07 2020-03-24 Asm Ip Holding B.V. Magnetic susceptor to baseplate seal
JP6647817B2 (ja) 2015-08-21 2020-02-14 白光株式会社 加熱カートリッジ及び加熱工具
US9960072B2 (en) 2015-09-29 2018-05-01 Asm Ip Holding B.V. Variable adjustment for precise matching of multiple chamber cavity housings
US10211308B2 (en) 2015-10-21 2019-02-19 Asm Ip Holding B.V. NbMC layers
US10322384B2 (en) 2015-11-09 2019-06-18 Asm Ip Holding B.V. Counter flow mixer for process chamber
JP2017119295A (ja) * 2015-12-28 2017-07-06 太洋電機産業株式会社 半田ごて
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US10468251B2 (en) 2016-02-19 2019-11-05 Asm Ip Holding B.V. Method for forming spacers using silicon nitride film for spacer-defined multiple patterning
US10529554B2 (en) 2016-02-19 2020-01-07 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US10501866B2 (en) 2016-03-09 2019-12-10 Asm Ip Holding B.V. Gas distribution apparatus for improved film uniformity in an epitaxial system
US10343920B2 (en) 2016-03-18 2019-07-09 Asm Ip Holding B.V. Aligned carbon nanotubes
US9892913B2 (en) 2016-03-24 2018-02-13 Asm Ip Holding B.V. Radial and thickness control via biased multi-port injection settings
US10865475B2 (en) 2016-04-21 2020-12-15 Asm Ip Holding B.V. Deposition of metal borides and silicides
US10190213B2 (en) 2016-04-21 2019-01-29 Asm Ip Holding B.V. Deposition of metal borides
US10367080B2 (en) 2016-05-02 2019-07-30 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
US10032628B2 (en) 2016-05-02 2018-07-24 Asm Ip Holding B.V. Source/drain performance through conformal solid state doping
KR102592471B1 (ko) 2016-05-17 2023-10-20 에이에스엠 아이피 홀딩 비.브이. 금속 배선 형성 방법 및 이를 이용한 반도체 장치의 제조 방법
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
US10388509B2 (en) 2016-06-28 2019-08-20 Asm Ip Holding B.V. Formation of epitaxial layers via dislocation filtering
US9859151B1 (en) 2016-07-08 2018-01-02 Asm Ip Holding B.V. Selective film deposition method to form air gaps
US10612137B2 (en) 2016-07-08 2020-04-07 Asm Ip Holdings B.V. Organic reactants for atomic layer deposition
US10714385B2 (en) 2016-07-19 2020-07-14 Asm Ip Holding B.V. Selective deposition of tungsten
KR102354490B1 (ko) 2016-07-27 2022-01-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
US9812320B1 (en) 2016-07-28 2017-11-07 Asm Ip Holding B.V. Method and apparatus for filling a gap
KR102532607B1 (ko) 2016-07-28 2023-05-15 에이에스엠 아이피 홀딩 비.브이. 기판 가공 장치 및 그 동작 방법
US9887082B1 (en) 2016-07-28 2018-02-06 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10395919B2 (en) 2016-07-28 2019-08-27 Asm Ip Holding B.V. Method and apparatus for filling a gap
KR102613349B1 (ko) 2016-08-25 2023-12-14 에이에스엠 아이피 홀딩 비.브이. 배기 장치 및 이를 이용한 기판 가공 장치와 박막 제조 방법
US10410943B2 (en) 2016-10-13 2019-09-10 Asm Ip Holding B.V. Method for passivating a surface of a semiconductor and related systems
US10643826B2 (en) 2016-10-26 2020-05-05 Asm Ip Holdings B.V. Methods for thermally calibrating reaction chambers
CN210848697U (zh) 2016-10-26 2020-06-26 米沃奇电动工具公司 焊接工具及其组件
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US10714350B2 (en) 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10643904B2 (en) 2016-11-01 2020-05-05 Asm Ip Holdings B.V. Methods for forming a semiconductor device and related semiconductor device structures
US10229833B2 (en) 2016-11-01 2019-03-12 Asm Ip Holding B.V. Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10435790B2 (en) 2016-11-01 2019-10-08 Asm Ip Holding B.V. Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap
US10134757B2 (en) 2016-11-07 2018-11-20 Asm Ip Holding B.V. Method of processing a substrate and a device manufactured by using the method
KR102546317B1 (ko) 2016-11-15 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기체 공급 유닛 및 이를 포함하는 기판 처리 장치
US10340135B2 (en) 2016-11-28 2019-07-02 Asm Ip Holding B.V. Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride
KR20180068582A (ko) 2016-12-14 2018-06-22 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
KR20180070971A (ko) 2016-12-19 2018-06-27 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US10269558B2 (en) 2016-12-22 2019-04-23 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10867788B2 (en) 2016-12-28 2020-12-15 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10655221B2 (en) 2017-02-09 2020-05-19 Asm Ip Holding B.V. Method for depositing oxide film by thermal ALD and PEALD
US10468261B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US10283353B2 (en) 2017-03-29 2019-05-07 Asm Ip Holding B.V. Method of reforming insulating film deposited on substrate with recess pattern
US10529563B2 (en) 2017-03-29 2020-01-07 Asm Ip Holdings B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
CN107084799B (zh) * 2017-04-20 2019-02-15 安徽春辉仪表线缆集团有限公司 一种可自行拉直的热电偶结构
KR102457289B1 (ko) 2017-04-25 2022-10-21 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 반도체 장치의 제조 방법
US10446393B2 (en) 2017-05-08 2019-10-15 Asm Ip Holding B.V. Methods for forming silicon-containing epitaxial layers and related semiconductor device structures
US10892156B2 (en) 2017-05-08 2021-01-12 Asm Ip Holding B.V. Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
US10770286B2 (en) 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US10504742B2 (en) 2017-05-31 2019-12-10 Asm Ip Holding B.V. Method of atomic layer etching using hydrogen plasma
US10886123B2 (en) 2017-06-02 2021-01-05 Asm Ip Holding B.V. Methods for forming low temperature semiconductor layers and related semiconductor device structures
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
US10685834B2 (en) 2017-07-05 2020-06-16 Asm Ip Holdings B.V. Methods for forming a silicon germanium tin layer and related semiconductor device structures
KR20190009245A (ko) 2017-07-18 2019-01-28 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물
US10541333B2 (en) 2017-07-19 2020-01-21 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11018002B2 (en) 2017-07-19 2021-05-25 Asm Ip Holding B.V. Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US10590535B2 (en) 2017-07-26 2020-03-17 Asm Ip Holdings B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US10312055B2 (en) 2017-07-26 2019-06-04 Asm Ip Holding B.V. Method of depositing film by PEALD using negative bias
US10605530B2 (en) 2017-07-26 2020-03-31 Asm Ip Holding B.V. Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace
US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US10692741B2 (en) 2017-08-08 2020-06-23 Asm Ip Holdings B.V. Radiation shield
US10249524B2 (en) 2017-08-09 2019-04-02 Asm Ip Holding B.V. Cassette holder assembly for a substrate cassette and holding member for use in such assembly
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11139191B2 (en) 2017-08-09 2021-10-05 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
USD900036S1 (en) 2017-08-24 2020-10-27 Asm Ip Holding B.V. Heater electrical connector and adapter
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
KR102491945B1 (ko) 2017-08-30 2023-01-26 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11056344B2 (en) 2017-08-30 2021-07-06 Asm Ip Holding B.V. Layer forming method
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
KR102401446B1 (ko) 2017-08-31 2022-05-24 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US10607895B2 (en) 2017-09-18 2020-03-31 Asm Ip Holdings B.V. Method for forming a semiconductor device structure comprising a gate fill metal
KR102630301B1 (ko) 2017-09-21 2024-01-29 에이에스엠 아이피 홀딩 비.브이. 침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치
US10844484B2 (en) 2017-09-22 2020-11-24 Asm Ip Holding B.V. Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US10658205B2 (en) 2017-09-28 2020-05-19 Asm Ip Holdings B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US10403504B2 (en) 2017-10-05 2019-09-03 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US10319588B2 (en) 2017-10-10 2019-06-11 Asm Ip Holding B.V. Method for depositing a metal chalcogenide on a substrate by cyclical deposition
USD852596S1 (en) 2017-10-26 2019-07-02 Milwaukee Electric Tool Corporation Soldering tool
US10923344B2 (en) 2017-10-30 2021-02-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
KR102443047B1 (ko) 2017-11-16 2022-09-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 방법 및 그에 의해 제조된 장치
US10910262B2 (en) 2017-11-16 2021-02-02 Asm Ip Holding B.V. Method of selectively depositing a capping layer structure on a semiconductor device structure
US11022879B2 (en) 2017-11-24 2021-06-01 Asm Ip Holding B.V. Method of forming an enhanced unexposed photoresist layer
KR102597978B1 (ko) 2017-11-27 2023-11-06 에이에스엠 아이피 홀딩 비.브이. 배치 퍼니스와 함께 사용하기 위한 웨이퍼 카세트를 보관하기 위한 보관 장치
CN111344522B (zh) 2017-11-27 2022-04-12 阿斯莫Ip控股公司 包括洁净迷你环境的装置
US10290508B1 (en) 2017-12-05 2019-05-14 Asm Ip Holding B.V. Method for forming vertical spacers for spacer-defined patterning
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
KR20200108016A (ko) 2018-01-19 2020-09-16 에이에스엠 아이피 홀딩 비.브이. 플라즈마 보조 증착에 의해 갭 충진 층을 증착하는 방법
TW202325889A (zh) 2018-01-19 2023-07-01 荷蘭商Ａｓｍ 智慧財產控股公司 沈積方法
USD903477S1 (en) 2018-01-24 2020-12-01 Asm Ip Holdings B.V. Metal clamp
US11018047B2 (en) 2018-01-25 2021-05-25 Asm Ip Holding B.V. Hybrid lift pin
US10535516B2 (en) 2018-02-01 2020-01-14 Asm Ip Holdings B.V. Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures
USD880437S1 (en) 2018-02-01 2020-04-07 Asm Ip Holding B.V. Gas supply plate for semiconductor manufacturing apparatus
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
CN111699278B (zh) 2018-02-14 2023-05-16 Asm Ip私人控股有限公司 通过循环沉积工艺在衬底上沉积含钌膜的方法
US10731249B2 (en) 2018-02-15 2020-08-04 Asm Ip Holding B.V. Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
US10658181B2 (en) 2018-02-20 2020-05-19 Asm Ip Holding B.V. Method of spacer-defined direct patterning in semiconductor fabrication
KR102636427B1 (ko) 2018-02-20 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 장치
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11114283B2 (en) 2018-03-16 2021-09-07 Asm Ip Holding B.V. Reactor, system including the reactor, and methods of manufacturing and using same
KR102646467B1 (ko) 2018-03-27 2024-03-11 에이에스엠 아이피 홀딩 비.브이. 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조
US10510536B2 (en) 2018-03-29 2019-12-17 Asm Ip Holding B.V. Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US11088002B2 (en) 2018-03-29 2021-08-10 Asm Ip Holding B.V. Substrate rack and a substrate processing system and method
KR102501472B1 (ko) 2018-03-30 2023-02-20 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
KR20210007986A (ko) * 2018-04-11 2021-01-20 와틀로 일렉트릭 매뉴팩츄어링 컴파니 온도 감지 전력 핀 및 보조 감지 접합부를 갖는 저항성 히터
TWI811348B (zh) 2018-05-08 2023-08-11 荷蘭商Ａｓｍ 智慧財產控股公司 藉由循環沉積製程於基板上沉積氧化物膜之方法及相關裝置結構
TW202349473A (zh) 2018-05-11 2023-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於基板上形成摻雜金屬碳化物薄膜之方法及相關半導體元件結構
KR102596988B1 (ko) 2018-05-28 2023-10-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 그에 의해 제조된 장치
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
US11270899B2 (en) 2018-06-04 2022-03-08 Asm Ip Holding B.V. Wafer handling chamber with moisture reduction
US11286562B2 (en) 2018-06-08 2022-03-29 Asm Ip Holding B.V. Gas-phase chemical reactor and method of using same
KR102568797B1 (ko) 2018-06-21 2023-08-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 시스템
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
CN112292478A (zh) 2018-06-27 2021-01-29 Asm Ip私人控股有限公司 用于形成含金属的材料的循环沉积方法及包含含金属的材料的膜和结构
TWI815915B (zh) 2018-06-27 2023-09-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於形成含金屬材料及包含含金屬材料的膜及結構之循環沉積方法
KR20200002519A (ko) 2018-06-29 2020-01-08 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 반도체 장치의 제조 방법
US10612136B2 (en) 2018-06-29 2020-04-07 ASM IP Holding, B.V. Temperature-controlled flange and reactor system including same
US10755922B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10388513B1 (en) 2018-07-03 2019-08-20 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10767789B2 (en) 2018-07-16 2020-09-08 Asm Ip Holding B.V. Diaphragm valves, valve components, and methods for forming valve components
JP6963307B2 (ja) * 2018-07-25 2021-11-05 白光株式会社 加熱工具及び加熱工具の製造方法
US10483099B1 (en) 2018-07-26 2019-11-19 Asm Ip Holding B.V. Method for forming thermally stable organosilicon polymer film
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US10883175B2 (en) 2018-08-09 2021-01-05 Asm Ip Holding B.V. Vertical furnace for processing substrates and a liner for use therein
US10829852B2 (en) 2018-08-16 2020-11-10 Asm Ip Holding B.V. Gas distribution device for a wafer processing apparatus
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
KR20200030162A (ko) 2018-09-11 2020-03-20 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법
US11024523B2 (en) 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
US11049751B2 (en) 2018-09-14 2021-06-29 Asm Ip Holding B.V. Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
US10751822B2 (en) * 2018-09-25 2020-08-25 Ok International, Inc. Smart soldering iron tip and method of authenticating same
US10751823B2 (en) * 2018-09-25 2020-08-25 Ok International, Inc. Smart soldering iron tip and method of authenticating same
TWI697252B (zh) * 2018-09-27 2020-06-21 愛烙達股份有限公司 高效率電熱裝置
CN110970344A (zh) 2018-10-01 2020-04-07 Asm Ip控股有限公司 衬底保持设备、包含所述设备的***及其使用方法
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102592699B1 (ko) 2018-10-08 2023-10-23 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치
US10847365B2 (en) 2018-10-11 2020-11-24 Asm Ip Holding B.V. Method of forming conformal silicon carbide film by cyclic CVD
US10811256B2 (en) 2018-10-16 2020-10-20 Asm Ip Holding B.V. Method for etching a carbon-containing feature
KR102605121B1 (ko) 2018-10-19 2023-11-23 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
KR102546322B1 (ko) 2018-10-19 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
USD948463S1 (en) 2018-10-24 2022-04-12 Asm Ip Holding B.V. Susceptor for semiconductor substrate supporting apparatus
US10381219B1 (en) 2018-10-25 2019-08-13 Asm Ip Holding B.V. Methods for forming a silicon nitride film
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
KR20200051105A (ko) 2018-11-02 2020-05-13 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 기판 처리 장치
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US10847366B2 (en) 2018-11-16 2020-11-24 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US10559458B1 (en) 2018-11-26 2020-02-11 Asm Ip Holding B.V. Method of forming oxynitride film
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
KR102636428B1 (ko) 2018-12-04 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치를 세정하는 방법
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
TW202037745A (zh) 2018-12-14 2020-10-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成裝置結構之方法、其所形成之結構及施行其之系統
TW202405220A (zh) 2019-01-17 2024-02-01 荷蘭商Ａｓｍ Ｉｐ 私人控股有限公司 藉由循環沈積製程於基板上形成含過渡金屬膜之方法
KR20200091543A (ko) 2019-01-22 2020-07-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
CN111524788B (zh) 2019-02-01 2023-11-24 Asm Ip私人控股有限公司 氧化硅的拓扑选择性膜形成的方法
KR20200102357A (ko) 2019-02-20 2020-08-31 에이에스엠 아이피 홀딩 비.브이. 3-d nand 응용의 플러그 충진체 증착용 장치 및 방법
JP2020136678A (ja) 2019-02-20 2020-08-31 エーエスエム・アイピー・ホールディング・ベー・フェー 基材表面内に形成された凹部を充填するための方法および装置
KR102626263B1 (ko) 2019-02-20 2024-01-16 에이에스엠 아이피 홀딩 비.브이. 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치
CN111593319B (zh) 2019-02-20 2023-05-30 Asm Ip私人控股有限公司 用于填充在衬底表面内形成的凹部的循环沉积方法和设备
JP2020133004A (ja) 2019-02-22 2020-08-31 エーエスエム・アイピー・ホールディング・ベー・フェー 基材を処理するための基材処理装置および方法
KR20200108243A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. SiOC 층을 포함한 구조체 및 이의 형성 방법
KR20200108242A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체
US11742198B2 (en) 2019-03-08 2023-08-29 Asm Ip Holding B.V. Structure including SiOCN layer and method of forming same
JP2020167398A (ja) 2019-03-28 2020-10-08 エーエスエム・アイピー・ホールディング・ベー・フェー ドアオープナーおよびドアオープナーが提供される基材処理装置
KR20200116855A (ko) 2019-04-01 2020-10-13 에이에스엠 아이피 홀딩 비.브이. 반도체 소자를 제조하는 방법
US11447864B2 (en) 2019-04-19 2022-09-20 Asm Ip Holding B.V. Layer forming method and apparatus
KR20200125453A (ko) 2019-04-24 2020-11-04 에이에스엠 아이피 홀딩 비.브이. 기상 반응기 시스템 및 이를 사용하는 방법
KR20200130121A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 딥 튜브가 있는 화학물질 공급원 용기
KR20200130118A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 비정질 탄소 중합체 막을 개질하는 방법
KR20200130652A (ko) 2019-05-10 2020-11-19 에이에스엠 아이피 홀딩 비.브이. 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조
JP2020188254A (ja) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー．ブイ． ウェハボートハンドリング装置、縦型バッチ炉および方法
JP2020188255A (ja) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー．ブイ． ウェハボートハンドリング装置、縦型バッチ炉および方法
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
USD935572S1 (en) 2019-05-24 2021-11-09 Asm Ip Holding B.V. Gas channel plate
USD922229S1 (en) 2019-06-05 2021-06-15 Asm Ip Holding B.V. Device for controlling a temperature of a gas supply unit
KR20200141002A (ko) 2019-06-06 2020-12-17 에이에스엠 아이피 홀딩 비.브이. 배기 가스 분석을 포함한 기상 반응기 시스템을 사용하는 방법
KR20200143254A (ko) 2019-06-11 2020-12-23 에이에스엠 아이피 홀딩 비.브이. 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조
USD944946S1 (en) 2019-06-14 2022-03-01 Asm Ip Holding B.V. Shower plate
USD931978S1 (en) 2019-06-27 2021-09-28 Asm Ip Holding B.V. Showerhead vacuum transport
KR20210005515A (ko) 2019-07-03 2021-01-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법
JP7499079B2 (ja) 2019-07-09 2024-06-13 エーエスエム・アイピー・ホールディング・ベー・フェー 同軸導波管を用いたプラズマ装置、基板処理方法
CN112216646A (zh) 2019-07-10 2021-01-12 Asm Ip私人控股有限公司 基板支撑组件及包括其的基板处理装置
KR20210010307A (ko) 2019-07-16 2021-01-27 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR20210010816A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 라디칼 보조 점화 플라즈마 시스템 및 방법
KR20210010820A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 실리콘 게르마늄 구조를 형성하는 방법
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
CN112242296A (zh) 2019-07-19 2021-01-19 Asm Ip私人控股有限公司 形成拓扑受控的无定形碳聚合物膜的方法
TW202113936A (zh) 2019-07-29 2021-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於利用n型摻雜物及/或替代摻雜物選擇性沉積以達成高摻雜物併入之方法
CN112309899A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
CN112309900A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
CN112323048B (zh) 2019-08-05 2024-02-09 Asm Ip私人控股有限公司 用于化学源容器的液位传感器
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
JP2021031769A (ja) 2019-08-21 2021-03-01 エーエスエム アイピー ホールディング ビー．ブイ． 成膜原料混合ガス生成装置及び成膜装置
USD940837S1 (en) 2019-08-22 2022-01-11 Asm Ip Holding B.V. Electrode
USD930782S1 (en) 2019-08-22 2021-09-14 Asm Ip Holding B.V. Gas distributor
KR20210024423A (ko) 2019-08-22 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 홀을 구비한 구조체를 형성하기 위한 방법
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
USD949319S1 (en) 2019-08-22 2022-04-19 Asm Ip Holding B.V. Exhaust duct
KR20210024420A (ko) 2019-08-23 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
KR20210029090A (ko) 2019-09-04 2021-03-15 에이에스엠 아이피 홀딩 비.브이. 희생 캡핑 층을 이용한 선택적 증착 방법
KR20210029663A (ko) 2019-09-05 2021-03-16 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
CN112593212B (zh) 2019-10-02 2023-12-22 Asm Ip私人控股有限公司 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法
CN112635282A (zh) 2019-10-08 2021-04-09 Asm Ip私人控股有限公司 具有连接板的基板处理装置、基板处理方法
KR20210042810A (ko) 2019-10-08 2021-04-20 에이에스엠 아이피 홀딩 비.브이. 활성 종을 이용하기 위한 가스 분배 어셈블리를 포함한 반응기 시스템 및 이를 사용하는 방법
KR20210043460A (ko) 2019-10-10 2021-04-21 에이에스엠 아이피 홀딩 비.브이. 포토레지스트 하부층을 형성하기 위한 방법 및 이를 포함한 구조체
US12009241B2 (en) 2019-10-14 2024-06-11 Asm Ip Holding B.V. Vertical batch furnace assembly with detector to detect cassette
TWI834919B (zh) 2019-10-16 2024-03-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氧化矽之拓撲選擇性膜形成之方法
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
KR20210047808A (ko) 2019-10-21 2021-04-30 에이에스엠 아이피 홀딩 비.브이. 막을 선택적으로 에칭하기 위한 장치 및 방법
KR20210050453A (ko) 2019-10-25 2021-05-07 에이에스엠 아이피 홀딩 비.브이. 기판 표면 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
KR20210054983A (ko) 2019-11-05 2021-05-14 에이에스엠 아이피 홀딩 비.브이. 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
KR20210062561A (ko) 2019-11-20 2021-05-31 에이에스엠 아이피 홀딩 비.브이. 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템
CN112951697A (zh) 2019-11-26 2021-06-11 Asm Ip私人控股有限公司 基板处理设备
US11450529B2 (en) 2019-11-26 2022-09-20 Asm Ip Holding B.V. Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface
CN112885693A (zh) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 基板处理设备
CN112885692A (zh) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 基板处理设备
JP2021090042A (ja) 2019-12-02 2021-06-10 エーエスエム アイピー ホールディング ビー．ブイ． 基板処理装置、基板処理方法
KR20210070898A (ko) 2019-12-04 2021-06-15 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11885013B2 (en) 2019-12-17 2024-01-30 Asm Ip Holding B.V. Method of forming vanadium nitride layer and structure including the vanadium nitride layer
KR20210080214A (ko) 2019-12-19 2021-06-30 에이에스엠 아이피 홀딩 비.브이. 기판 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조
TW202140135A (zh) 2020-01-06 2021-11-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氣體供應總成以及閥板總成
US11993847B2 (en) 2020-01-08 2024-05-28 Asm Ip Holding B.V. Injector
TW202129068A (zh) 2020-01-20 2021-08-01 荷蘭商Ａｓｍ Ｉｐ控股公司 形成薄膜之方法及修飾薄膜表面之方法
TW202130846A (zh) 2020-02-03 2021-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成包括釩或銦層的結構之方法
TW202146882A (zh) 2020-02-04 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 驗證一物品之方法、用於驗證一物品之設備、及用於驗證一反應室之系統
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
TW202146715A (zh) 2020-02-17 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於生長磷摻雜矽層之方法及其系統
TW202203344A (zh) 2020-02-28 2022-01-16 荷蘭商Ａｓｍ Ｉｐ控股公司 專用於零件清潔的系統
KR20210116240A (ko) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. 조절성 접합부를 갖는 기판 핸들링 장치
KR20210116249A (ko) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. 록아웃 태그아웃 어셈블리 및 시스템 그리고 이의 사용 방법
CN113394086A (zh) 2020-03-12 2021-09-14 Asm Ip私人控股有限公司 用于制造具有目标拓扑轮廓的层结构的方法
KR20210124042A (ko) 2020-04-02 2021-10-14 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법
TW202146689A (zh) 2020-04-03 2021-12-16 荷蘭商Ａｓｍ Ｉｐ控股公司 阻障層形成方法及半導體裝置的製造方法
TW202145344A (zh) 2020-04-08 2021-12-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於選擇性蝕刻氧化矽膜之設備及方法
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
US11996289B2 (en) 2020-04-16 2024-05-28 Asm Ip Holding B.V. Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods
TW202146831A (zh) 2020-04-24 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 垂直批式熔爐總成、及用於冷卻垂直批式熔爐之方法
KR20210132600A (ko) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템
TW202140831A (zh) 2020-04-24 2021-11-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成含氮化釩層及包含該層的結構之方法
KR20210134226A (ko) 2020-04-29 2021-11-09 에이에스엠 아이피 홀딩 비.브이. 고체 소스 전구체 용기
KR20210134869A (ko) 2020-05-01 2021-11-11 에이에스엠 아이피 홀딩 비.브이. Foup 핸들러를 이용한 foup의 빠른 교환
KR20210141379A (ko) 2020-05-13 2021-11-23 에이에스엠 아이피 홀딩 비.브이. 반응기 시스템용 레이저 정렬 고정구
KR20210143653A (ko) 2020-05-19 2021-11-29 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR20210145078A (ko) 2020-05-21 2021-12-01 에이에스엠 아이피 홀딩 비.브이. 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법
KR20210145080A (ko) 2020-05-22 2021-12-01 에이에스엠 아이피 홀딩 비.브이. 과산화수소를 사용하여 박막을 증착하기 위한 장치
TW202201602A (zh) 2020-05-29 2022-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
TW202218133A (zh) 2020-06-24 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成含矽層之方法
TW202217953A (zh) 2020-06-30 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
KR20220006455A (ko) 2020-07-08 2022-01-17 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
KR20220010438A (ko) 2020-07-17 2022-01-25 에이에스엠 아이피 홀딩 비.브이. 포토리소그래피에 사용하기 위한 구조체 및 방법
TW202204662A (zh) 2020-07-20 2022-02-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於沉積鉬層之方法及系統
US11725280B2 (en) 2020-08-26 2023-08-15 Asm Ip Holding B.V. Method for forming metal silicon oxide and metal silicon oxynitride layers
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
USD1012873S1 (en) 2020-09-24 2024-01-30 Asm Ip Holding B.V. Electrode for semiconductor processing apparatus
US12009224B2 (en) 2020-09-29 2024-06-11 Asm Ip Holding B.V. Apparatus and method for etching metal nitrides
TW202229613A (zh) 2020-10-14 2022-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 於階梯式結構上沉積材料的方法
TW202217037A (zh) 2020-10-22 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 沉積釩金屬的方法、結構、裝置及沉積總成
TW202223136A (zh) 2020-10-28 2022-06-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於在基板上形成層之方法、及半導體處理系統
KR20220076343A (ko) 2020-11-30 2022-06-08 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치의 반응 챔버 내에 배열되도록 구성된 인젝터
US11946137B2 (en) 2020-12-16 2024-04-02 Asm Ip Holding B.V. Runout and wobble measurement fixtures
TW202231903A (zh) 2020-12-22 2022-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 過渡金屬沉積方法、過渡金屬層、用於沉積過渡金屬於基板上的沉積總成
USD1023959S1 (en) 2021-05-11 2024-04-23 Asm Ip Holding B.V. Electrode for substrate processing apparatus
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate
JP7113576B1 (ja) * 2022-04-08 2022-08-05 白光株式会社 ヒータセンサ複合体及び鏝先カートリッジ

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2747074A (en) * 1949-05-24 1956-05-22 Gen Electric Electric soldering iron
US2717952A (en) * 1952-04-05 1955-09-13 Western Electric Co Temperature-controlled electrical soldering iron
US2897335A (en) * 1958-06-23 1959-07-28 Gen Electric Temperature controlled soldering iron
US3654427A (en) * 1970-09-28 1972-04-04 Alexander Schoenwald Electric heated soldering tool
US3883716A (en) * 1971-03-08 1975-05-13 William S Fortune Temperature controlled soldering instrument
US4010351A (en) * 1976-03-03 1977-03-01 Rama Corporation Cartridge heater with improved thermocouple
GB1530029A (en) * 1976-04-26 1978-10-25 Adcola Prod Ltd Soldering instruments
SE447271B (sv) * 1980-02-06 1986-11-03 Bulten Kanthal Ab Elektriskt vermeelement med ett motstandselement - bestaende av en fe-cr-al-legering - som er inbeddat i en isolerande massa av mgo
JPS6016476A (ja) * 1983-07-08 1985-01-28 Tokai Kounetsu Kogyo Kk 炭化珪素系熱電素子
US4822979A (en) * 1987-01-02 1989-04-18 Dekam Cornelius T Temperature controlled soldering iron with a unitary electrically heated soldering tip and thermocouple
JPH02234032A (ja) * 1989-03-08 1990-09-17 Snow Brand Milk Prod Co Ltd 流体の状態を知るための計測用センサー及びそのセンサーを用いる測定方法
US5043560A (en) * 1989-09-29 1991-08-27 Masreliez C Johan Temperature control of a heated probe
US5122637A (en) * 1991-01-11 1992-06-16 Wellman Thermal Systems Corporation Temperature controlled soldering iron having low tip leakage voltage
JPH0534205A (ja) * 1991-07-29 1993-02-09 Matsushita Electric Ind Co Ltd 温度センサ
US5297716A (en) * 1993-04-12 1994-03-29 Honeywell Inc. Soldering tool with attached thermocouple
JPH0740037A (ja) * 1993-07-23 1995-02-10 Nippon Bonkooto Kk 電気半田ごて
US5406053A (en) * 1993-07-29 1995-04-11 Masreliez; C. Johan Heating probe having a heated tip forming a thermocouple

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100418687C (zh) * 2005-06-24 2008-09-17 深圳斯贝克动力电子有限公司 电烙铁及其温度控制方法
CN101493707B (zh) * 2008-01-21 2011-03-23 同方威视技术股份有限公司 闭环温度控制加热电路
CN102090141A (zh) * 2008-02-26 2011-06-08 阿雷瓦核能有限责任公司 电加热元件
CN102090141B (zh) * 2008-02-26 2015-04-01 阿雷瓦有限责任公司 电加热元件
CN103180703A (zh) * 2010-09-07 2013-06-26 斯通瑞智公司 温度传感器
CN102009243A (zh) * 2010-10-27 2011-04-13 华东交通大学 一种定热量电烙铁装置及控制方法
CN102009243B (zh) * 2010-10-27 2012-09-19 华东交通大学 一种定热量电烙铁装置及控制方法
CN103207028A (zh) * 2012-01-17 2013-07-17 太洋电机产业株式会社 烙铁头温度测量装置及用于其的温度传感器
CN103207028B (zh) * 2012-01-17 2015-09-02 太洋电机产业株式会社 烙铁头温度测量装置及用于其的温度传感器
CN104577239A (zh) * 2013-10-17 2015-04-29 福特全球技术公司 电动车辆的电池热电偶
CN106687244A (zh) * 2014-05-28 2017-05-17 白光株式会社 加热器传感器分组件及钎焊卡式件
CN106687244B (zh) * 2014-05-28 2019-04-05 白光株式会社 加热器传感器分组件及钎焊卡式件
CN107852778A (zh) * 2015-05-29 2018-03-27 沃特洛电气制造公司 具有温度感测功率引脚的电阻加热器
CN106914674A (zh) * 2015-12-28 2017-07-04 太洋电机产业株式会社 烙铁
US10232456B2 (en) 2015-12-28 2019-03-19 Taiyo Electric Ind. Co., Ltd. Soldering iron
CN106914674B (zh) * 2015-12-28 2020-05-01 太洋电机产业株式会社 烙铁
CN108770103A (zh) * 2018-06-08 2018-11-06 宁波兴慈热动电器有限公司 电子调温器用电子加热器
CN108770103B (zh) * 2018-06-08 2024-04-26 宁波兴慈热动电器有限公司 电子调温器用电子加热器
WO2021168961A1 (zh) * 2020-02-27 2021-09-02 南京科润工业介质股份有限公司 一种淬火介质热稳定性的测试装置
WO2021168960A1 (zh) * 2020-02-27 2021-09-02 南京科润工业介质股份有限公司 一种淬火介质冷却性能的在线监测***

Also Published As

Publication number Publication date
FR2760931A1 (fr) 1998-09-18
KR19980080206A (ko) 1998-11-25
FR2760931B1 (fr) 2001-08-24
KR100506023B1 (ko) 2005-10-28
IT1299379B1 (it) 2000-03-16
GB2325840A (en) 1998-12-02
GB9805212D0 (en) 1998-05-06
ITRM980161A1 (it) 1999-09-13
ES2144947A1 (es) 2000-06-16
CA2231924A1 (en) 1998-09-14
CN1133353C (zh) 2003-12-31
DE19810519C2 (de) 2002-02-21
DE19810519A1 (de) 1998-09-17
HK1015115A1 (en) 1999-10-08
ID20052A (id) 1998-09-17
TW441218B (en) 2001-06-16
US6054678A (en) 2000-04-25
JPH10260083A (ja) 1998-09-29
MY121720A (en) 2006-02-28
GB2325840B (en) 2001-04-11
ITRM980161A0 (it) 1998-03-13
ES2144947B1 (es) 2001-01-16
CA2231924C (en) 2007-05-15
JP3124506B2 (ja) 2001-01-15

Similar Documents

Publication Publication Date Title
CN1133353C (zh) 加热器－传感器复合装置
KR101590051B1 (ko) 세라믹 히터
US4634837A (en) Sintered ceramic heater element
US4499366A (en) Ceramic heater device
US5589091A (en) Glow plug with prestressed contact surfaces
EP0978720A3 (en) Gas sensor with ceramic heater
CN103890555B (zh) 热电偶
AU2003283730A1 (en) Electric device comprising a layer of phase change material and method of manufacturing the same
US6060821A (en) Heater equipped spark plug
KR20240047439A (ko) 올세라믹 발열체
AU6205001A (en) Electric component, method for the production thereof and use of the same
CN102597724B (zh) 电阻元件、红外线传感器及电气设备
US4929813A (en) Glow plug for diesel engine
CN205587248U (zh) 一种速热型热熔胶枪
HUP0202789A2 (en) Ceramic sheathed element glow plug
JP3078418B2 (ja) セラミック発熱体
CN115460726A (zh) 一种复合陶瓷发热体及其制备方法
CN209400459U (zh) 一种用于气体浓度测量的陶瓷芯片及传感器
KR20000011830A (ko) 서미스터
JPS6124178A (ja) 導電体を導電性帯状体又は導電性層と耐熱的に接触させる方法
JP3179722B2 (ja) 半田ごて用ヒータ及び半田ごて
JPH10335050A (ja) セラミックヒータ
JP3846947B2 (ja) グロープラグ
JPS62175523A (ja) デイ−ゼルエンジン用グロ−プラグ
JPS58150850A (ja) ガス感応素子

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CX01 Expiry of patent term
CX01 Expiry of patent term

Granted publication date: 20031231