CN1184534C - 正型光致抗蚀剂层及其制备方法 - Google Patents
正型光致抗蚀剂层及其制备方法 Download PDFInfo
- Publication number
- CN1184534C CN1184534C CNB001268406A CN00126840A CN1184534C CN 1184534 C CN1184534 C CN 1184534C CN B001268406 A CNB001268406 A CN B001268406A CN 00126840 A CN00126840 A CN 00126840A CN 1184534 C CN1184534 C CN 1184534C
- Authority
- CN
- China
- Prior art keywords
- weight
- substrate
- corrosion
- photo
- agent composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 37
- 238000000034 method Methods 0.000 title claims abstract description 15
- 239000000203 mixture Substances 0.000 claims abstract description 52
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 239000002904 solvent Substances 0.000 claims abstract description 19
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 claims abstract description 18
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052751 metal Inorganic materials 0.000 claims abstract description 6
- 239000002184 metal Substances 0.000 claims abstract description 6
- 239000003795 chemical substances by application Substances 0.000 claims description 43
- 239000011347 resin Substances 0.000 claims description 15
- 229920005989 resin Polymers 0.000 claims description 15
- 229920002313 fluoropolymer Polymers 0.000 claims description 13
- 239000004811 fluoropolymer Substances 0.000 claims description 13
- 239000000839 emulsion Substances 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 9
- 238000002360 preparation method Methods 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 5
- 238000009413 insulation Methods 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 5
- 229920003986 novolac Polymers 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 3
- 238000003384 imaging method Methods 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- FHIVAFMUCKRCQO-UHFFFAOYSA-N diazinon Chemical compound CCOP(=S)(OCC)OC1=CC(C)=NC(C(C)C)=N1 FHIVAFMUCKRCQO-UHFFFAOYSA-N 0.000 claims description 2
- 230000005855 radiation Effects 0.000 abstract description 3
- QMYGFTJCQFEDST-UHFFFAOYSA-N 3-methoxybutyl acetate Chemical compound COC(C)CCOC(C)=O QMYGFTJCQFEDST-UHFFFAOYSA-N 0.000 abstract 2
- 239000012212 insulator Substances 0.000 abstract 1
- 239000002952 polymeric resin Substances 0.000 abstract 1
- 229920003002 synthetic resin Polymers 0.000 abstract 1
- 239000011521 glass Substances 0.000 description 12
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 12
- 238000000576 coating method Methods 0.000 description 7
- 230000014759 maintenance of location Effects 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 5
- DNJIEGIFACGWOD-UHFFFAOYSA-N ethanethiol Chemical compound CCS DNJIEGIFACGWOD-UHFFFAOYSA-N 0.000 description 4
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 4
- -1 organic acid cyclic anhydride Chemical class 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- 238000007598 dipping method Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- LIPRQQHINVWJCH-UHFFFAOYSA-N 1-ethoxypropan-2-yl acetate Chemical compound CCOCC(C)OC(C)=O LIPRQQHINVWJCH-UHFFFAOYSA-N 0.000 description 2
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000002671 adjuvant Substances 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 150000001540 azides Chemical class 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 229940116333 ethyl lactate Drugs 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- WOAHJDHKFWSLKE-UHFFFAOYSA-N 1,2-benzoquinone Chemical compound O=C1C=CC=CC1=O WOAHJDHKFWSLKE-UHFFFAOYSA-N 0.000 description 1
- KETQAJRQOHHATG-UHFFFAOYSA-N 1,2-naphthoquinone Chemical compound C1=CC=C2C(=O)C(=O)C=CC2=C1 KETQAJRQOHHATG-UHFFFAOYSA-N 0.000 description 1
- 229940105324 1,2-naphthoquinone Drugs 0.000 description 1
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- WVDDGKGOMKODPV-UHFFFAOYSA-N Benzyl alcohol Chemical compound OCC1=CC=CC=C1 WVDDGKGOMKODPV-UHFFFAOYSA-N 0.000 description 1
- 229930192627 Naphthoquinone Natural products 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002318 adhesion promoter Substances 0.000 description 1
- 150000005215 alkyl ethers Chemical class 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
- 239000012965 benzophenone Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 125000000853 cresyl group Chemical group C1(=CC=C(C=C1)C)* 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000007687 exposure technique Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- QVEIBLDXZNGPHR-UHFFFAOYSA-N naphthalene-1,4-dione;diazide Chemical compound [N-]=[N+]=[N-].[N-]=[N+]=[N-].C1=CC=C2C(=O)C=CC(=O)C2=C1 QVEIBLDXZNGPHR-UHFFFAOYSA-N 0.000 description 1
- 150000002791 naphthoquinones Chemical class 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- IWDCLRJOBJJRNH-UHFFFAOYSA-N p-cresol Chemical compound CC1=CC=C(O)C=C1 IWDCLRJOBJJRNH-UHFFFAOYSA-N 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 230000007096 poisonous effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000000935 solvent evaporation Methods 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials For Photolithography (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
950rpm | 1100rpm | 1250rpm | 1400rpm | |||||
90℃ | 135℃ | 90℃ | 135℃ | 90℃ | 135℃ | 90℃ | 135℃ | |
实施例2 | 1.635 | 1.508 | 1.590 | 1.463 | 1.531 | 1.407 | 1.461 | 1.348 |
Claims (7)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR37690/1999 | 1999-09-06 | ||
KR10-1999-0037690A KR100455652B1 (ko) | 1999-09-06 | 1999-09-06 | 포지티브형 포토레지스트 막의 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1297169A CN1297169A (zh) | 2001-05-30 |
CN1184534C true CN1184534C (zh) | 2005-01-12 |
Family
ID=19610243
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB001268406A Expired - Lifetime CN1184534C (zh) | 1999-09-06 | 2000-09-06 | 正型光致抗蚀剂层及其制备方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6338930B1 (zh) |
JP (1) | JP4309033B2 (zh) |
KR (1) | KR100455652B1 (zh) |
CN (1) | CN1184534C (zh) |
TW (1) | TWI253541B (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100299689B1 (ko) * | 1999-08-30 | 2001-09-13 | 한의섭 | 포지티브형 포토레지스트 조성물 |
KR100299688B1 (ko) * | 1999-08-30 | 2001-09-13 | 한의섭 | 포지티브형 포토레지스트 조성물 |
JP4053402B2 (ja) * | 2002-10-23 | 2008-02-27 | 東京応化工業株式会社 | Lcd製造用ポジ型ホトレジスト組成物およびレジストパターンの形成方法 |
KR100598290B1 (ko) * | 2004-05-20 | 2006-07-07 | 동부일렉트로닉스 주식회사 | 리소그래피 공정의 감광막 패턴 형성 방법 |
JP2007101715A (ja) * | 2005-09-30 | 2007-04-19 | Fujifilm Corp | パターン形成方法及びそれに用いるレジスト組成物 |
JP2007279237A (ja) * | 2006-04-04 | 2007-10-25 | Nitto Denko Corp | 光導波路の製法 |
US20220035251A1 (en) * | 2020-07-31 | 2022-02-03 | Applied Materials, Inc. | Methods to fabricate 2d wedge and localized encapsulation for diffractive optics |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03155554A (ja) | 1989-11-14 | 1991-07-03 | Japan Synthetic Rubber Co Ltd | 放射線感応性樹脂組成物 |
JP2939946B2 (ja) * | 1990-12-27 | 1999-08-25 | ジェイエスアール株式会社 | 微細レジストパターンの形成方法 |
US5332650A (en) | 1991-09-06 | 1994-07-26 | Japan Synthetic Rubber Co., Ltd. | Radiation-sensitive composition |
TW324834B (en) | 1996-02-01 | 1998-01-11 | Tokyo Electron Co Ltd | Method for forming membrane |
JP3388676B2 (ja) | 1996-05-29 | 2003-03-24 | 富士ゼロックス株式会社 | 電子写真感光体の塗布装置及びその塗布方法 |
JPH10186638A (ja) * | 1996-12-26 | 1998-07-14 | Clariant Internatl Ltd | ロールコート用放射線感応性組成物 |
JP2002512647A (ja) | 1997-04-09 | 2002-04-23 | チバ スペシャルティ ケミカルズ ホールディング インコーポレーテッド | 黒色着色された組織化高分子量材料 |
US6207231B1 (en) | 1997-05-07 | 2001-03-27 | Tokyo Electron Limited | Coating film forming method and coating apparatus |
SG71808A1 (en) | 1997-07-04 | 2000-04-18 | Tokyo Electron Ltd | Centrifugal coating apparatus with detachable outer cup |
-
1999
- 1999-09-06 KR KR10-1999-0037690A patent/KR100455652B1/ko active IP Right Grant
-
2000
- 2000-06-16 TW TW089111856A patent/TWI253541B/zh not_active IP Right Cessation
- 2000-08-30 JP JP2000260443A patent/JP4309033B2/ja not_active Expired - Lifetime
- 2000-09-05 US US09/654,927 patent/US6338930B1/en not_active Expired - Lifetime
- 2000-09-06 CN CNB001268406A patent/CN1184534C/zh not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
CN1297169A (zh) | 2001-05-30 |
JP4309033B2 (ja) | 2009-08-05 |
JP2001104867A (ja) | 2001-04-17 |
US6338930B1 (en) | 2002-01-15 |
KR100455652B1 (ko) | 2004-11-06 |
TWI253541B (en) | 2006-04-21 |
KR20010026391A (ko) | 2001-04-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2540640B2 (ja) | 熱安定性フエノ―ル系樹脂組成物及び感光性組成物中でのそれらの使用 | |
US7195854B2 (en) | Photoresist composition | |
TWI407253B (zh) | 光阻劑組成物 | |
KR20070108713A (ko) | 포토레지스트 조성물 | |
CN1184534C (zh) | 正型光致抗蚀剂层及其制备方法 | |
CN1280673C (zh) | 用于液晶设备的正型光刻胶组合物 | |
KR101280019B1 (ko) | 포토레지스트 조성물 | |
TWI546620B (zh) | 光阻劑組成物 | |
KR20070108715A (ko) | 포토레지스트 조성물 | |
KR20000057619A (ko) | 이온 교환에 의해 유기 극성 용매를 포함하는 포토레지스트조성물내의 금속 이온 오염물을 감소시키는 방법 | |
US20080182204A1 (en) | Photoresists comprising novolak resin blends | |
CN1158569C (zh) | 正型光致抗蚀剂组合物 | |
CN1163797C (zh) | 正型光致抗蚀剂组合物 | |
KR100363273B1 (ko) | 액정표시장치 회로용 포토레지스트 조성물 | |
JPH09143237A (ja) | 安定した分子量を有するノボラック樹脂およびそれから製造されるフォトレジスト | |
KR20120068462A (ko) | 포지티브 포토레지스트 조성물 및 이를 이용한 포토레지스트 패턴 형성방법 | |
KR20090024354A (ko) | 도포성이 우수한 포지티브 포토레지스트 조성물 | |
KR20080105224A (ko) | 도포성이 우수한 포지티브 포토레지스트 조성물 | |
KR20090039328A (ko) | 포지티브형 포토레지스트 조성물 및 이를 이용한패턴형성방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C06 | Publication | ||
PB01 | Publication | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SAMSUNG MONITOR CO., LTD. Free format text: FORMER OWNER: SAMSUNG ELECTRONICS CO., LTD. Effective date: 20121029 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20121029 Address after: Gyeonggi Do, South Korea Patentee after: Samsung Display Co., Ltd. Patentee after: Dongwoo Semiconductor Co., Ltd. Address before: Gyeonggi Do, South Korea Patentee before: Samsung Electronics Co., Ltd. Patentee before: Dongwoo Semiconductor Co., Ltd. |
|
CX01 | Expiry of patent term | ||
CX01 | Expiry of patent term |
Granted publication date: 20050112 |