CN118231490A - Lattice passivation contact structure, solar cell, assembly and system - Google Patents

Abstract

The application is suitable for the technical field of solar cells and provides a lattice passivation contact structure, a solar cell, a module and a system. The lattice passivation contact structure of the solar cell includes: a silicon substrate; the first silicon oxide layer, the doped layer, the second silicon oxide layer and the passivation layer are sequentially arranged on the silicon substrate; the substances of the doped layer penetrate through the first silicon oxide layer in the penetrating region to be in contact with the silicon substrate. In this way, the penetrating region can form a direct channel for carrier transmission, reduce the proportion of tunneling transmission and increase the proportion of hole transmission, thereby improving the efficiency of carrier transmission, reducing the series resistance contribution of the first silicon oxide layer and improving the filling factor and photoelectric conversion efficiency of the solar cell. In addition, the gettering effect of substances in the doped layer can be further improved, and the minority carrier lifetime of the silicon wafer is prolonged.

Description

Lattice passivation contact structure, solar cell, assembly and system

Technical Field

The application belongs to the technical field of solar cells, and particularly relates to a lattice passivation contact structure, a solar cell, a module and a system.

Background

Solar cells generate electricity as a sustainable clean energy source that uses the photovoltaic effect of the semiconductor p-n junction to convert sunlight into electrical energy, and the resulting current is drawn from the electrodes through the conductive regions.

In the related art, a conductive region of a solar cell includes a lattice passivation contact structure. The lattice passivation contact structure separates the doped layer from the silicon substrate by utilizing the tunneling layer to form a structure in which the silicon substrate, the tunneling layer and the doped layer are sequentially laminated. However, in the current lattice passivation contact structure, the carrier transmission efficiency is low, the gettering effect is poor, and the photoelectric conversion efficiency of the solar cell is low.

Based on this, how to design a lattice passivation contact structure to improve the photoelectric conversion efficiency becomes a problem to be solved.

Disclosure of Invention

The application provides a lattice passivation contact structure, which aims to solve the problem of how to design the lattice passivation contact structure to improve the photoelectric conversion efficiency.

The present invention is achieved by providing a lattice passivation contact structure of a solar cell, comprising:

A silicon substrate;

the first silicon oxide layer, the doped layer, the second silicon oxide layer and the passivation layer are sequentially arranged on the silicon substrate;

the substances of the doped layer penetrate through the first silicon oxide layer in the penetrating region to be in contact with the silicon substrate.

Further, the doped layer comprises polysilicon.

Further, the substance of the doped layer penetrating the first silicon oxide layer is polysilicon.

Further, the doping elements of the doping layer and the first silicon oxide layer are the third main group element or the fifth main group element.

Further, the third main group element is boron element.

Further, the fifth main group element is a phosphorus element.

Still further, the first silicon oxide layer and the second silicon oxide layer each have a thickness of less than or equal to 3nm.

Still further, the first silicon oxide layer has a thickness of less than or equal to 2.5nm and the second silicon oxide layer has a thickness of less than or equal to 2nm.

Further, the passivation layer is one or more of an oxide layer, a silicon carbide layer, and an amorphous silicon layer.

The invention also provides a solar cell which is topcon cell or a back contact cell, the topcon cell or the back contact cell comprising a lattice passivation contact structure of a solar cell as described above.

The invention also provides a solar cell module comprising the solar cell.

The invention also provides a solar cell system comprising the solar cell module.

According to the lattice passivation contact structure provided by the embodiment of the application, substances of the doped layer penetrate through the first silicon oxide layer to be in contact with the silicon substrate in the penetrating region, the penetrating region can form a direct channel for carrier transmission, the tunneling transmission proportion is reduced, the hole transmission proportion is increased, the carrier transmission efficiency is improved, the series resistance contribution of the first silicon oxide layer is reduced, and the filling factor and the photoelectric conversion efficiency of the solar cell are improved. In addition, the substances in the doped layer penetrate through the first silicon oxide layer in the penetrating area to be in contact with the silicon substrate, so that the gettering effect of the substances in the doped layer can be further improved, and the minority carrier lifetime of the silicon wafer is prolonged.

Drawings

Fig. 1 is a schematic structural diagram of a lattice passivation contact structure of a solar cell according to an embodiment of the present application;

fig. 2 is an actual detection image of a cross section of a lattice passivation contact structure of a solar cell provided by an embodiment of the present application under an optical microscope;

fig. 3 is a schematic structural diagram of a solar cell according to an embodiment of the present application.

Description of main reference numerals:

Solar cell 100, lattice passivation contact structure 10, silicon substrate 101, first silicon oxide layer 11, penetration region 111, doped layer 12, second silicon oxide layer 13, passivation layer 14.

Detailed Description

The present application will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present application more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the application.

In the application, substances of the doped layer penetrate through the first silicon oxide layer in the penetrating area to be in contact with the silicon substrate, the penetrating area can form a direct channel for carrier transmission, the tunneling transmission proportion is reduced, the hole transmission proportion is increased, the carrier transmission efficiency is improved, the series resistance contribution of the first silicon oxide layer is reduced, and the filling factor and the photoelectric conversion efficiency of the solar cell are improved. In addition, the substances in the doped layer penetrate through the first silicon oxide layer in the penetrating area to be in contact with the silicon substrate, so that the gettering effect of the substances in the doped layer can be further improved, and the minority carrier lifetime of the silicon wafer is prolonged.

Example 1

Referring to fig. 1, a lattice passivation contact structure of a solar cell according to an embodiment of the present application includes:

a silicon substrate 101;

A first silicon oxide layer 11, a doped layer 12, a second silicon oxide layer 13, and a passivation layer 14 sequentially disposed on a silicon substrate 101;

The species of doped layer 12 penetrate first silicon oxide layer 11 at penetration region 111 to contact silicon substrate 101.

According to the lattice passivation contact structure of the solar cell, after the material of the doped layer 12 is subjected to an annealing process, crystals are precipitated, and when part of the crystals form crystals at the boundary of the doped layer, the crystals squeeze and even penetrate through the first silicon oxide layer 11, so that the material of the doped layer 12 can almost be in direct contact with the silicon substrate 101 in the region. Under an optical microscope, it can be seen that the doped layer 12 contains a plurality of small regions with diagonal grains, which are crystals precipitated in the doped layer, and that some of the small regions with diagonal grains are distributed at the boundary of the first silicon oxide layer 11, i.e. the crystals of the doped layer penetrate the first silicon oxide layer 11 to form the penetration region 111. The penetrating region 111 can form a direct channel for carrier transport, reduce the proportion of tunneling transport, and increase the proportion of hole transport, thereby improving the efficiency of carrier transport, reducing the series resistance contribution of the first silicon oxide layer 11, and improving the filling factor and photoelectric conversion efficiency of the solar cell. In addition, the substances of the doped layer 12 penetrate through the first silicon oxide layer 11 in the penetrating region 111 to contact with the silicon substrate 101, so that the gettering effect of the substances of the doped layer 12 can be further improved, and the minority carrier lifetime of the silicon wafer can be prolonged.

Wherein in the penetration region 111 the substance of the doped layer 12 penetrates the first silicon oxide layer 11 into contact with the silicon substrate 101. Referring to fig. 1 and 2, in the doped layer 12, there are a plurality of relatively regular crystal diagonal structures, and in the penetration region 111, the material of the doped layer 12 is also a relatively regular crystal diagonal structure, and the crystal diagonal structure is formed by polysilicon. As can be seen from fig. 2, the crystalline diagonal structure of the doped layer 12 is actually formed in the penetration region 111 penetrating the first silicon oxide layer 11 to contact the silicon substrate 101.

It should be noted that at least one, for example, two, three, four, etc., of the penetrating regions 111 may be provided in the extending direction of the first silicon oxide layer 11. In the at least one penetration region 111, there are cases where the substances of the doped layer 12 penetrate the first silicon oxide layer 11 and come into contact with the silicon substrate 101, respectively.

Specifically, the silicon substrate 101 includes a front surface and a back surface opposite to each other, where the front surface faces the sun during normal operation, and is a light-facing surface, and can directly receive sunlight. The back face faces away from the sun during normal operation, and in the case of a solar cell arranged obliquely on the ground, the back face can receive sunlight reflected by the ground.

In this embodiment, the silicon substrate 101 is an N-type monocrystalline silicon wafer. It will be appreciated that in other embodiments, the silicon substrate 101 may be a polycrystalline silicon wafer, a quasi-monocrystalline silicon wafer, or other types of silicon wafers. The silicon substrate 101 may also be P-type, and the silicon substrate 101 may be set according to practical use requirements, which is not particularly limited herein.

Specifically, an inner diffusion layer may be formed between the silicon substrate 101 and the first silicon oxide layer 11. The inner diffusion layer comprises one or more of a doped crystalline silicon layer, a doped amorphous silicon layer, a doped polycrystalline silicon layer, a doped nanocrystalline silicon layer, a doped mixed crystal silicon layer, a doped silicon carbide layer, a doped silicon dioxide layer, a doped silicon oxycarbide layer, a doped silicon oxynitride layer and a doped silicon oxycarbonitride layer. It is understood that in other embodiments, the silicon substrate 101 and the first silicon oxide layer 11 may be in direct contact without forming an inner diffusion layer.

Specifically, the number of the first silicon oxide layers 11 is one. It is understood that in other embodiments, the number of first silicon oxide layers 11 may be 2, 3, 4, or other numbers.

Specifically, the first silicon oxide layer 11 may be entirely provided on the silicon substrate 101. It is understood that in other embodiments, the first silicon oxide layer 11 may also be locally provided on the silicon substrate 101.

Specifically, the doped layer 12 includes one or more of a doped amorphous silicon layer, a doped polysilicon layer, a doped nanocrystalline silicon layer, a doped mixed crystal silicon layer, a doped silicon carbide layer, a doped silicon dioxide layer, a doped silicon oxycarbide layer, a doped silicon oxynitride layer, and a doped silicon oxycarbonitride layer.

Further, in the case where the dope layer 12 includes a plurality of the above-described film layers, the plurality of film layers may be mixed with each other or may be stacked in order; alternatively, some kinds of film layers may be mixed, and the other kinds of film layers may be laminated in order; alternatively, a plurality of film layers in a partial region may be mixed, and a plurality of film layers in the remaining region may be laminated in order. The specific form of the doped layer 12 is not limited herein.

Further, the doped layer 12 includes a plurality of doped films stacked in order, and the refractive index of the adjacent two doped films is different. Therefore, the two adjacent layers of doped films can form refractive index gradient, gradient extinction is achieved, light absorption of the solar cell can be enhanced, and photoelectric conversion efficiency is improved. It will be appreciated that in other embodiments, the doped layer 12 comprises multiple doped films stacked in sequence, and that the refractive indices of adjacent doped films may be the same.

Specifically, the doping polarity of the doped layer 12 may be the same as that of the silicon substrate 101 or may be different from that of the silicon substrate 101. In other words, the doping polarities of the doped silicon substrate 101 of the doped layer 12 may be N-type or P-type; the doping polarity of the doped layer 12 may be N-type, and the doping polarity of the silicon substrate 101 may be P-type; the doping layer 12 may have a P-type doping polarity, and the silicon substrate 101 may have an N-type doping polarity.

Specifically, the doped layer 12 may be provided over the entire surface of the first silicon oxide layer 11. It is understood that in other embodiments, the doped layer 12 may also be locally provided on the first silicon oxide layer 11.

Specifically, the structure of the second silicon oxide layer 13 may be the same as that of the first silicon oxide layer 11. The second silicon oxide layer 13 may also be denser and thicker than the first silicon oxide layer 11.

Specifically, the second silicon dioxide layer 13 has a thickness of more than 0.3nm and less than 0.5nm. For example, 0.31nm, 0.32nm, 0.38nm, 0.4nm, 0.45nm, 0.49nm. It can be understood that the second silicon dioxide layer 13 and the doped layer 12 can form a dense semi-coherent grain boundary, external metal is easy to form a short circuit and diffuse to the silicon substrate 101 through the semi-coherent grain boundary, and finally the electrical performance is reduced or PID failure is caused, and the second silicon dioxide layer 13 with the thickness of more than 0.3nm can effectively block the diffusion of metal impurities. Meanwhile, the second silicon dioxide layer 13 with the thickness smaller than 5nm allows H ions in the passivation layer 14 of the outer layer to rapidly penetrate through the doped layer 12, the interface between the doped layer 12 and the silicon substrate 101 in the heat treatment processes such as sintering, annealing and the like, so that effective H passivation is formed.

Specifically, the number of the second silicon oxide layers 13 is one. It will be appreciated that in other embodiments, the number of second silicon dioxide layers 13 may be 2, 3, 4 or other.

Specifically, the second silicon oxide layer 13 may be provided entirely on the doped layer 12. It is understood that in other embodiments, the second silicon oxide layer 13 may also be locally provided on the doped layer 12.

Specifically, the passivation layer 14 includes at least one of a silicon oxide layer, a silicon nitride layer, and a silicon oxynitride layer. Thus, the surface passivation of the solar cell is realized.

Further, the number of passivation layers 14 may be 1, 2, 3, or other number.

Further, the passivation layer 14 may be formed with a groove. In this way, the electrode is made to contact the doped layer 12 by slotting through the passivation layer 14 and the second silicon dioxide layer 13, thereby leading out the current generated by the solar cell.

Example two

In some alternative embodiments, doped layer 12 comprises polysilicon.

Therefore, compared with the first silicon oxide layer 11, the intrinsic polysilicon layer is more easily doped into the doped polysilicon layer, so that the doping of the intrinsic polysilicon layer can be prevented from influencing the first silicon oxide layer 11, and the normal preparation and functions of the first silicon oxide layer 11 and the doped polysilicon layer are ensured. Furthermore, the doped polysilicon layer may block diffusion of metal impurities and allow H ions in the passivation layer 14 to rapidly penetrate during heat treatment such as sintering, annealing, etc., to reach the silicon substrate 101, thereby forming effective H passivation.

Example III

In some alternative embodiments, the substance of doped layer 12 penetrating first silicon oxide layer 11 is polysilicon.

Referring to fig. 1 and 2, in the doped layer 12, there are a plurality of relatively regular crystal diagonal structures, and in the penetration region 111, the material of the doped layer 12 is also a relatively regular crystal diagonal structure, and the crystal diagonal structure is formed by polysilicon.

Example IV

In some alternative embodiments, the doping elements of doped layer 12 and first silicon oxide layer 11 are both a third main group element or a fifth main group element.

In this way, the doped layer 12 and the first silicon oxide layer 11 form a P-type doped region or an N-type doped region by using the third main group element or the fifth main group element, thereby forming a PN junction on the silicon substrate 101.

Specifically, the third main group element includes boron, aluminum, gallium, indium, thallium. The doping elements of the doped layer 12 and the first silicon oxide layer 11 may be one or more of boron, aluminum, gallium, indium, thallium.

Specifically, the fifth main group element includes nitrogen, phosphorus, arsenic, antimony, bismuth. The doping elements of the doped layer 12 and the first silicon oxide layer 11 may be one or more of nitrogen, phosphorus, arsenic, antimony, bismuth.

Example five

In some alternative embodiments, the third main group element is a boron element. The doped layer 12 and the first silicon oxide layer 11 form a P-type doped region by the boron element. Of course, in other embodiments, the third main group element may be other, which is not described herein.

Example six

In some alternative embodiments, the fifth main group element is a phosphorus element. The doped layer 12 and the first silicon oxide layer 11 form an N-type doped region by means of a phosphorus element. Of course, in other embodiments, the fifth main group element may be other, which is not described herein.

Example seven

In some alternative embodiments, the thickness of both the first silicon oxide layer 11 and the second silicon oxide layer 13 is less than or equal to 3nm. I.e. the thickness of the first silicon oxide layer 11 is less than or equal to 3nm and the thickness of the second silicon oxide layer 13 is also less than or equal to 3nm.

In this way, the thicknesses of the first silicon oxide layer 11 and the second silicon oxide layer 13 are respectively in proper ranges, so that the gettering and conductive effects of the first silicon oxide layer 11 are good, and the effects of blocking the diffusion of metal impurities and enabling H ions to pass through quickly are good for the second silicon oxide layer 13.

Specifically, the thickness of the first silicon oxide layer 11 is, for example, 2.9nm, 2.8nm, 2.5nm, 2.2nm, 2nm, 1.5nm, 1nm, 0.8nm, 0.5nm.

Specifically, the thickness of the second silicon dioxide layer 13 is, for example, 0.5nm, 0.8nm, 1nm, 1.2nm, 1.5nm, 2nm, 2.5nm, 2.8nm, 3nm.

Example eight

In some alternative embodiments, the first silicon oxide layer 11 has a thickness less than or equal to 2.5nm and the second silicon oxide layer 13 has a thickness less than or equal to 2nm.

Thus, the thicknesses of the first silicon oxide layer 11 and the second silicon oxide layer 13 are respectively in a more appropriate range, so that the gettering and conducting effects of the first silicon oxide layer 11 are better, and the effects of blocking the diffusion of metal impurities and enabling H ions to pass through quickly are better for the second silicon oxide layer 13.

Specifically, the thickness of the first silicon oxide layer 11 is, for example, 0.5nm, 0.8nm, 1nm, 1.2nm, 1.5nm, 1.8nm, 2nm, 2.3nm, 2.5nm.

Specifically, the thickness of the second silicon dioxide layer 13 is, for example, 0.5nm, 1nm, 1.2nm, 1.5nm, 1.8nm, 1.9nm, 2nm.

Example nine

In some alternative embodiments, passivation layer 14 is one or a combination of an oxide layer, a silicon carbide layer, and an amorphous silicon layer.

Thus, a good passivation effect is achieved.

For example, the passivation layer 14 is an oxide layer of a single material; as another example, passivation layer 14 is a combination of oxide layers of various materials and amorphous silicon layers; for another example, the passivation layer 14 is a combination of multiple layers of amorphous silicon of different refractive indices of a single material. The passivation layer 14 may be a silicon oxynitride layer, a silicon nitride layer, or the like. It will be appreciated that the specific structural arrangement of the passivation layer 14 includes, but is not limited to, the several ways listed above, and the passivation layer 14 may be correspondingly disposed according to actual use needs, which is not specifically limited herein.

Further, the passivation layer 14 thereof has a thickness of 0.5-10nm. Preferably, the passivation layer 14 has a thickness of preferably 0.8-2nm. It will be appreciated that the thickness of the passivation layer 14 may be set as in the prior art, or may be set thicker than the prior art, etc., according to the actual use requirements, and is not specifically limited herein.

Preferably, the passivation layer 14 is an oxide layer and a silicon carbide layer sequentially arranged outward from the second silicon oxide layer 13. Further, the oxide layer is preferably one or more of a silicon oxide layer and an aluminum oxide layer. Further, the silicon carbide layer includes a hydrogenated silicon carbide layer, and hydrogen in the hydrogenated silicon carbide layer enters the silicon substrate 101 under the action of a diffusion mechanism and a thermal effect, so that dangling bonds on the back surface of the silicon substrate 101 can be neutralized, and defects of the silicon substrate 101 are passivated, so that an energy band in a forbidden band is converted into a valence band or a conduction band, and the probability that carriers enter the second silicon dioxide layer 13 through the passivation layer 14 is improved.

Examples ten

Referring to fig. 3, the solar cell 100 according to the embodiment of the present application is topcon a cell or a back contact cell, topcon a cell or a back contact cell includes the lattice passivation contact structure 10 of the solar cell 100 according to any one of the first to ninth embodiments.

In the solar cell 100 according to the embodiment of the present application, after the material of the doped layer 12 is annealed, crystals are precipitated, and when a part of the crystals form crystals at the boundary of the doped layer, the crystals squeeze or even penetrate through the first silicon oxide layer 11, so that the material of the doped layer 12 can almost directly contact with the silicon substrate 101 in this area. Under an optical microscope, it can be seen that the doped layer 12 contains a plurality of small regions with diagonal grains, which are crystals precipitated in the doped layer, and that some of the small regions with diagonal grains are distributed at the boundary of the first silicon oxide layer 11, i.e. the crystals of the doped layer penetrate the first silicon oxide layer 11 to form the penetration region 111. The penetrating region 111 can form a direct channel for carrier transport, reduce the proportion of tunneling transport, and increase the proportion of hole transport, thereby improving the efficiency of carrier transport, reducing the series resistance contribution of the first silicon oxide layer 11, and improving the filling factor and photoelectric conversion efficiency of the solar cell. In addition, the substances of the doped layer 12 penetrate through the first silicon oxide layer 11 in the penetrating region 111 to contact with the silicon substrate 101, so that the gettering effect of the substances of the doped layer 12 can be further improved, and the minority carrier lifetime of the silicon wafer can be prolonged.

Specifically, in the case where the solar cell 100 is a back contact cell, the conductive regions of P, N of two polarities are provided on one side of the back contact cell at intervals. In the case of the solar cell 100 being a double-sided contact cell, P, N conductive layers of two polarities are respectively disposed on the two sides of the back contact cell.

Further, the conductive regions of both polarities may be the lattice passivation contact structure 10 of the solar cell 100 of any one of the embodiments one to nine; the P-type conductive region may be the lattice passivation contact structure 10 of the solar cell 100 according to any one of the first to ninth embodiments, and the n-type conductive region may not be the lattice passivation contact structure 10 of the solar cell 100 according to any one of the first to ninth embodiments; the N-type conductive region may be the lattice passivation contact structure 10 of the solar cell 100 according to any one of the first to ninth embodiments, and the p-type conductive region may not be the lattice passivation contact structure 10 of the solar cell 100 according to any one of the first to ninth embodiments.

Further, the solar cell 100 includes P, N electrodes of two polarities, i.e., a first electrode 191 and a second electrode 192 in fig. 3, respectively connected to the silicon substrate 101 through P, N conductive regions of two polarities.

Example eleven

The solar cell module according to the embodiment of the present application includes the solar cell 100 according to the tenth embodiment.

In the solar cell module of the embodiment of the present application, after the material of the doped layer 12 is annealed, crystals are precipitated, and when a part of crystals form crystals at the boundary of the doped layer, the crystals squeeze or even penetrate through the first silicon oxide layer 11, so that the material of the doped layer 12 can almost directly contact with the silicon substrate 101 in this area. Under an optical microscope, it can be seen that the doped layer 12 contains a plurality of small regions with diagonal grains, which are crystals precipitated in the doped layer, and that some of the small regions with diagonal grains are distributed at the boundary of the first silicon oxide layer 11, i.e. the crystals of the doped layer penetrate the first silicon oxide layer 11 to form the penetration region 111. The penetrating region 111 can form a direct channel for carrier transport, reduce the proportion of tunneling transport, and increase the proportion of hole transport, thereby improving the efficiency of carrier transport, reducing the series resistance contribution of the first silicon oxide layer 11, and improving the filling factor and photoelectric conversion efficiency of the solar cell. In addition, the substances of the doped layer 12 penetrate through the first silicon oxide layer 11 in the penetrating region 111 to contact with the silicon substrate 101, so that the gettering effect of the substances of the doped layer 12 can be further improved, and the minority carrier lifetime of the silicon wafer can be prolonged.

In this embodiment, a plurality of solar cells 100 in the solar cell module may be serially connected in sequence to form a cell string, so as to realize serial bus output of current, for example, serial connection of the battery pieces may be realized by providing a solder strip (bus bar, interconnection bar), a conductive back plate, and the like.

It is understood that in such embodiments, the solar module may also include a metal frame, a back sheet, photovoltaic glass, and a glue film. The adhesive film may be filled between the front and back surfaces of the solar cell 100 and the photovoltaic glass, adjacent cells, etc., and as a filler, it may be a transparent adhesive with good light transmittance and aging resistance, for example, the adhesive film may be an EVA adhesive film or a POE adhesive film, and may be specifically selected according to practical situations, which is not limited herein.

The photovoltaic glass may be coated on the adhesive film on the front surface of the solar cell 100, and the photovoltaic glass may be ultra-white glass having high light transmittance, high transparency, and excellent physical, mechanical, and optical properties, for example, the ultra-white glass may have a light transmittance of 92% or more, which may protect the solar cell 100 without affecting the efficiency of the solar cell 100 as much as possible. Meanwhile, the photovoltaic glass and the solar cell 100 can be bonded together by the adhesive film, and the solar cell 100 can be sealed and insulated and waterproof and moistureproof by the adhesive film.

The back plate can be attached to an adhesive film on the back of the solar cell 100, can protect and support the solar cell 100, has reliable insulativity, water resistance and aging resistance, can be selected multiple times, and can be toughened glass, organic glass, an aluminum alloy TPT composite adhesive film and the like, and the back plate can be specifically set according to specific conditions without limitation. The whole of the back plate, the solar cell 100, the adhesive film and the photovoltaic glass may be disposed on a metal frame, which serves as a main external support structure of the whole solar cell module, and may stably support and mount the solar cell module, for example, the solar cell module may be mounted at a desired mounting position through the metal frame.

Example twelve

The solar cell system of the embodiment of the application comprises the solar cell module of the eleventh embodiment.

In the solar cell system of the embodiment of the application, after the material of the doped layer 12 is subjected to the annealing process, crystals are precipitated, and when part of the crystals form crystals at the boundary of the doped layer, the crystals squeeze and even penetrate through the first silicon oxide layer 11, so that the material of the doped layer 12 can almost directly contact with the silicon substrate 101 in the region. Under an optical microscope, it can be seen that the doped layer 12 contains a plurality of small regions with diagonal grains, which are crystals precipitated in the doped layer, and that some of the small regions with diagonal grains are distributed at the boundary of the first silicon oxide layer 11, i.e. the crystals of the doped layer penetrate the first silicon oxide layer 11 to form the penetration region 111. The penetrating region 111 can form a direct channel for carrier transport, reduce the proportion of tunneling transport, and increase the proportion of hole transport, thereby improving the efficiency of carrier transport, reducing the series resistance contribution of the first silicon oxide layer 11, and improving the filling factor and photoelectric conversion efficiency of the solar cell. In addition, the substances of the doped layer 12 penetrate through the first silicon oxide layer 11 in the penetrating region 111 to contact with the silicon substrate 101, so that the gettering effect of the substances of the doped layer 12 can be further improved, and the minority carrier lifetime of the silicon wafer can be prolonged.

In this embodiment, the solar cell system may be applied to a photovoltaic power station, such as a ground power station, a roof power station, a water power station, or the like, and may also be applied to a device or apparatus that uses solar energy to generate power, such as a user solar power source, a solar street lamp, a solar car, a solar building, or the like. Of course, it is understood that the application scenario of the solar cell system is not limited thereto, that is, the solar cell system may be applied to all fields where power generation using solar energy is required. Taking a photovoltaic power generation system network as an example, the solar battery system can comprise a photovoltaic array, a junction box and an inverter, wherein the photovoltaic array can be an array combination of a plurality of solar battery components, for example, the plurality of solar battery components can form a plurality of photovoltaic arrays, the photovoltaic arrays are connected with the junction box, the junction box can conduct junction on currents generated by the photovoltaic arrays, and the currents after junction flow through the inverter to be converted into alternating currents required by a commercial power network and then are connected into the commercial power network to realize solar power supply.

The foregoing description of the preferred embodiments of the application is not intended to be limiting, but rather is intended to cover all modifications, equivalents, and alternatives falling within the spirit and principles of the application. Furthermore, the particular features, structures, materials, or characteristics described in connection with each embodiment or example of the application may be combined in any suitable manner in any one or more embodiments or examples.

Claims (12)

1. A lattice passivated contact structure for a solar cell, comprising:

A silicon substrate;

the first silicon oxide layer, the doped layer, the second silicon oxide layer and the passivation layer are sequentially arranged on the silicon substrate;

the substances of the doped layer penetrate through the first silicon oxide layer in the penetrating region to be in contact with the silicon substrate.

2. The crystalline passivation contact structure of claim 1, wherein the doped layer comprises polysilicon.

3. The crystalline passivation contact structure of claim 2, wherein the substance of the doped layer penetrating the first silicon oxide layer is polysilicon.

4. A lattice passivation contact structure for a solar cell according to any one of claims 1 to 3, wherein the doping elements of the doping layer and the first silicon oxide layer are both a third main group element or a fifth main group element.

5. The lattice passivation contact structure of claim 4, wherein the third main group element is boron.

6. The lattice passivation contact structure of claim 4, wherein the fifth main group element is a phosphorus element.

7. A lattice passivation contact structure for a solar cell according to any one of claims 1 to 3, wherein the thickness of the first and second silicon oxide layers is less than or equal to 3nm.

8. The crystalline passivation contact structure of claim 7, wherein the first silicon oxide layer thickness is less than or equal to 2.5nm and the second silicon oxide layer thickness is less than or equal to 2nm.

9. A lattice passivation contact structure of a solar cell according to any one of claims 1 to 3, wherein the passivation layer is one or a combination of oxide layer, silicon carbide layer, and amorphous silicon layer.

10. A solar cell, characterized in that the solar cell is a topcon cell or a back contact cell, the topcon cell or the back contact cell comprising a lattice passivated contact structure of a solar cell according to any one of claims 1 to 9.

11. A solar cell assembly comprising the solar cell of claim 10.

12. A solar cell system, characterized in that the solar cell system comprises a solar cell module according to claim 11.