CN219350240U - Solar cell and passivation contact structure, assembly and system thereof - Google Patents
Solar cell and passivation contact structure, assembly and system thereof Download PDFInfo
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- CN219350240U CN219350240U CN202223409206.9U CN202223409206U CN219350240U CN 219350240 U CN219350240 U CN 219350240U CN 202223409206 U CN202223409206 U CN 202223409206U CN 219350240 U CN219350240 U CN 219350240U
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Abstract
The application is applicable to the technical field of solar cells and provides a solar cell and a passivation contact structure, a passivation contact assembly and a passivation contact system of the solar cell. The passivation contact structure of the solar cell includes: a silicon substrate; the first silicon oxide layer, the doped layer, the second silicon oxide layer and the passivation layer are sequentially arranged on the silicon substrate; the partial region of the first silicon oxide layer contains a thin region, and the silicon oxide substance content in the first silicon oxide layer is reduced in the thin region. Therefore, the first silicon oxide layer is thin in local area, so that quick passing of H is allowed, the passivation effect of H can be effectively improved, and the control difficulty of heat treatment is reduced.
Description
Technical Field
The application belongs to the technical field of solar cells, and particularly relates to a solar cell and a passivation contact structure, a passivation contact assembly and a passivation contact system of the solar cell.
Background
Solar cells generate electricity as a sustainable clean energy source that uses the photovoltaic effect of the semiconductor p-n junction to convert sunlight into electrical energy, and the resulting current is drawn from the electrodes through the conductive regions.
In the related art, a conductive region of a solar cell includes a passivation contact structure. The passivation contact structure utilizes the tunneling layer to isolate the doped layer from the silicon substrate to form a structure in which the silicon substrate, the tunneling layer and the doped layer are sequentially laminated. However, in the current passivation contact structure, H cannot pass through rapidly due to the thickness of the silicon oxide layer, so that the passivation effect of H is poor, and a great difficulty test is also provided for the heat treatment control process.
Based on the above, how to design a passivation contact structure to improve the H passivation effect and reduce the heat treatment control difficulty becomes a problem to be solved urgently.
Disclosure of Invention
The application provides a passivation contact structure, which aims at solving the problems of how to design the passivation contact structure to improve the H passivation effect and reduce the heat treatment control difficulty.
The present utility model is achieved by providing a passivation contact structure of a solar cell, comprising:
a silicon substrate;
the first silicon oxide layer, the doped layer, the second silicon oxide layer and the passivation layer are sequentially arranged on the silicon substrate;
the partial region of the first silicon oxide layer comprises a thin region, and the content of silicon oxide substances in the first silicon oxide layer is reduced in the thin region.
Further, the doping elements of the doping layer and the first silicon oxide layer are the third main group element or the fifth main group element.
Further, the third main group element is boron element.
Further, the fifth main group element is a phosphorus element.
Still further, the first silicon oxide layer and the second silicon oxide layer each have a thickness of less than or equal to 3nm.
Still further, the first silicon oxide layer has a thickness of less than or equal to 2.5nm and the second silicon oxide layer has a thickness of less than or equal to 2nm.
Further, the doped layer is a doped polysilicon layer.
Further, the passivation layer is one or more of an oxide layer, a silicon carbide layer, and an amorphous silicon layer.
The utility model also provides a solar cell which is a topcon cell or a back contact cell, wherein the topcon cell or the back contact cell comprises the passivation contact structure of the solar cell.
The utility model also provides a solar cell module comprising the solar cell.
The utility model also provides a solar cell system comprising the solar cell module.
According to the passivation contact structure, the local area of the first silicon oxide layer comprises the rarefied area, the content proportion of the silicon oxide substance in the first silicon oxide layer is reduced in the rarefied area, the area except the rarefied area is the non-rarefied area, the silicon oxide content in the rarefied area is lower than that in the non-rarefied area, and the local area of the first silicon oxide layer is rarefied, so that the quick passing of H is allowed, the passivation effect of H can be effectively improved, and the heat treatment control difficulty is reduced.
Drawings
Fig. 1 is a schematic structural diagram of a passivation contact structure of a solar cell according to an embodiment of the present disclosure;
fig. 2 is an actual detection image of a cross section of a passivation contact structure of a solar cell provided in an embodiment of the present application under an optical microscope;
fig. 3 is a schematic structural diagram of a solar cell according to an embodiment of the present disclosure.
Description of main reference numerals:
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application will be further described in detail with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the present application.
In the application, the local area of the first silicon oxide layer comprises a rarefied area, the content of silicon oxide substances in the first silicon oxide layer is reduced in the rarefied area, the area except the rarefied area is a non-rarefied area, the silicon oxide content of the rarefied area is lower than that of the non-rarefied area, and the local area of the first silicon oxide layer is rarefied, so that the quick passing of H is allowed, the passivation effect of H can be effectively improved, and the heat treatment control difficulty is reduced.
Example 1
Referring to fig. 1, a passivation contact structure 10 of a solar cell according to an embodiment of the present application includes:
a silicon substrate 101;
a first silicon oxide layer 11, a doped layer 12, a second silicon oxide layer 1313, and a passivation layer 14 disposed in this order on the silicon substrate 101;
the first silicon oxide layer 11 has a thin region 111 in a partial region, and the thin region 111 contains only a trace amount of silicon oxide.
The region of the first silicon oxide layer 11 other than the thin region 111 may be defined as the non-thin region 112. In the thin region 111, the content of the silicon oxide substance is significantly reduced in a discrete loose form, so that the substance of the doped layer 12 can directly penetrate to the silicon substrate 101 through the thin region 111.
The silica content of the thin region 111 is significantly lower than that of the non-thin region 112. Under an optical microscope, the first silicon oxide layer 11 is seen to be a bright band of about 1nm width, the gloss is distinguished from the materials on both sides, the brightness of the bright band is seen to be darker in a local area, the boundary between the bright band and the materials on both sides is relatively insignificant, and the thin area 111 corresponds to this area.
According to the passivation contact structure 10 of the solar cell, the local area of the first silicon oxide layer 11 comprises the thin area 111, the content ratio of the silicon oxide substance in the first silicon oxide layer 11 is reduced in the thin area 111, the area except the thin area 111 is the non-thin area 112, the silicon oxide content of the thin area 111 is lower than that of the non-thin area 112, and the local area of the first silicon oxide layer 11 is thin, so that the quick passing of H is allowed, the passivation effect of H can be effectively improved, and the heat treatment control difficulty is reduced.
Specifically, the number of lean regions 111 is plural. Further, the plurality of lean regions 111 are randomly and discretely distributed. Further, the areas of the plurality of lean regions 111 may be the same or different; the content of silicon oxide in the plurality of thin regions 111 may be the same or different.
Specifically, the number of non-lean regions 112 is plural. Further, the plurality of lean regions 111 are randomly and discretely distributed. Further, the areas of the plurality of non-lean regions 112 may be the same or different; the silicon oxide content of the plurality of non-lean regions 112 may be the same or different.
Fig. 2 is an actual inspection image of a cross section of a passivated contact structure 10 of a solar cell under an optical microscope. In fig. 2, the first silicon oxide layer 11 has a band-like structure extending from the left end to the right end of fig. 2. The gloss of the first silicon oxide layer 11 is different from both the doped layer 12 and the silicon substrate 101, and the gloss of the first silicon oxide layer 11 is brighter than the doped layer 12 and the silicon substrate 101. Furthermore, the first silicon oxide layer 11 has a difference in bright-dark areas in the extending direction, that is, the silicon oxide substance of the first silicon oxide layer 11 is not uniformly distributed.
Specifically, in the first silicon oxide layer 11, the region where the silicon oxide content is high, the thickness of the first silicon oxide layer 11 is thicker, and the glossiness is brighter, that is, the non-thin region 112; in the first silicon oxide layer 11, the region having a low silicon oxide content has a very thin silicon oxide content, and the glossiness is darker, that is, the thin region 111.
Further, in the extending direction of the first silicon oxide layer 11, the thin regions 111 are alternately arranged with the non-thin regions 112, so that it can be seen in fig. 2 that the first silicon oxide layer 11 forms a bright-dark alternating change in gloss in the extending direction.
It will be appreciated that, due to the very low silicon oxide content of the thin region 111, a clear demarcation of the first silicon oxide layer 11 with the silicon substrate 101, the doped layer 12 cannot be seen under an optical microscope, resulting in an almost direct contact of the doped layer 12 with the corresponding silicon substrate 101. In this way, the doping element of the doped layer 12 can penetrate to the silicon substrate 101 via the thin region 111 of the first silicon oxide layer 11.
Specifically, the silicon substrate 101 includes a front surface and a back surface opposite to each other, where the front surface faces the sun during normal operation, and is a light-facing surface, and can directly receive sunlight. The back face faces away from the sun during normal operation, and in the case of a solar cell arranged obliquely on the ground, the back face can receive sunlight reflected by the ground.
In this embodiment, the silicon substrate 101 is an N-type monocrystalline silicon wafer. It will be appreciated that in other embodiments, the silicon substrate 101 may be a polycrystalline silicon wafer, a quasi-monocrystalline silicon wafer, or other types of silicon wafers. The silicon substrate 101 may also be P-type, and the silicon substrate 101 may be set according to practical use requirements, which is not particularly limited herein.
Specifically, an inner diffusion layer may be formed between the silicon substrate 101 and the first silicon oxide layer 11. The inner diffusion layer comprises one or more of a doped crystalline silicon layer, a doped amorphous silicon layer, a doped polycrystalline silicon layer, a doped nanocrystalline silicon layer, a doped mixed crystal silicon layer, a doped silicon carbide layer, a doped silicon dioxide layer, a doped silicon oxycarbide layer, a doped silicon oxynitride layer and a doped silicon oxycarbonitride layer. It is understood that in other embodiments, the silicon substrate 101 and the first silicon oxide layer 11 may be in direct contact without forming an inner diffusion layer.
Specifically, the number of the first silicon oxide layers 11 is one. It is understood that in other embodiments, the number of first silicon oxide layers 11 may be 2, 3, 4, or other numbers.
Specifically, the first silicon oxide layer 11 may be entirely provided on the silicon substrate 101. It is understood that in other embodiments, the first silicon oxide layer 11 may also be locally provided on the silicon substrate 101.
Specifically, the doped layer 12 includes one or more of a doped amorphous silicon layer, a doped polysilicon layer, a doped nanocrystalline silicon layer, a doped mixed crystal silicon layer, a doped silicon carbide layer, a doped silicon dioxide layer, a doped silicon oxycarbide layer, a doped silicon oxynitride layer, and a doped silicon oxycarbonitride layer.
Further, in the case where the dope layer 12 includes a plurality of the above-described film layers, the plurality of film layers may be mixed with each other or may be stacked in order; alternatively, some kinds of film layers may be mixed, and the other kinds of film layers may be laminated in order; alternatively, a plurality of film layers in a partial region may be mixed, and a plurality of film layers in the remaining region may be laminated in order. The specific form of the doped layer 12 is not limited herein.
Further, the doped layer 12 includes a plurality of doped films stacked in order, and the refractive index of the adjacent two doped films is different. Therefore, the two adjacent layers of doped films can form refractive index gradient, gradient extinction is achieved, light absorption of the solar cell can be enhanced, and photoelectric conversion efficiency is improved. It will be appreciated that in other embodiments, the doped layer 12 comprises multiple doped films stacked in sequence, and that the refractive indices of adjacent doped films may be the same.
Specifically, the doping polarity of the doped layer 12 may be the same as that of the silicon substrate 101 or may be different from that of the silicon substrate 101. In other words, the doping polarities of the doped silicon substrate 101 of the doped layer 12 may be N-type or P-type; the doping polarity of the doped layer 12 may be N-type, and the doping polarity of the silicon substrate 101 may be P-type; the doping layer 12 may have a P-type doping polarity, and the silicon substrate 101 may have an N-type doping polarity.
Specifically, the doped layer 12 may be provided over the entire surface of the first silicon oxide layer 11. It is understood that in other embodiments, the doped layer 12 may also be locally provided on the first silicon oxide layer 11.
Specifically, the structure of the second silicon oxide layer 13 may be the same as that of the first silicon oxide layer 11. The second silicon oxide layer 13 may also be denser and thicker than the first silicon oxide layer 11.
Specifically, the second silicon dioxide layer 13 has a thickness of more than 0.3nm and less than 0.5nm. For example, 0.31nm, 0.32nm, 0.38nm, 0.4nm, 0.45nm, 0.49nm. It can be understood that the second silicon dioxide layer 13 and the doped layer 12 can form a dense semi-coherent grain boundary, external metal is easy to form a short circuit and diffuse to the silicon substrate 101 through the semi-coherent grain boundary, and finally the electrical performance is reduced or PID failure is caused, and the second silicon dioxide layer 13 with the thickness of more than 0.3nm can effectively block the diffusion of metal impurities. Meanwhile, the second silicon dioxide layer 13 with the thickness smaller than 5nm allows H ions in the passivation layer 14 of the outer layer to rapidly penetrate through the doped layer 12, the interface between the doped layer 12 and the silicon substrate 101 in the heat treatment processes such as sintering, annealing and the like, so that effective H passivation is formed.
Specifically, the number of the second silicon oxide layers 13 is one. It will be appreciated that in other embodiments, the number of second silicon dioxide layers 13 may be 2, 3, 4 or other.
Specifically, the second silicon oxide layer 13 may be provided entirely on the doped layer 12. It is understood that in other embodiments, the second silicon oxide layer 13 may also be locally provided on the doped layer 12.
Specifically, the passivation layer 14 includes at least one of a silicon oxide layer, a silicon nitride layer, and a silicon oxynitride layer. Thus, the surface passivation of the solar cell is realized.
Further, the number of passivation layers 14 may be 1, 2, 3, or other number.
Further, the passivation layer 14 may be formed with a groove. In this way, the electrode is made to contact the doped layer 12 by slotting through the passivation layer 14 and the second silicon dioxide layer 13, thereby leading out the current generated by the solar cell.
Example two
In some alternative embodiments, the doping elements of doped layer 12 and first silicon oxide layer 11 are both a third main group element or a fifth main group element.
In this way, the doped layer 12 and the first silicon oxide layer 11 form a P-type doped region or an N-type doped region by using the third main group element or the fifth main group element, thereby forming a PN junction on the silicon substrate 101.
Specifically, the third main group element includes boron, aluminum, gallium, indium, thallium. The doping elements of the doped layer 12 and the first silicon oxide layer 11 may be one or more of boron, aluminum, gallium, indium, thallium.
Specifically, the fifth main group element includes nitrogen, phosphorus, arsenic, antimony, bismuth. The doping elements of the doped layer 12 and the first silicon oxide layer 11 may be one or more of nitrogen, phosphorus, arsenic, antimony, bismuth.
Example III
In some alternative embodiments, the third main group element is a boron element. The doped layer 12 and the first silicon oxide layer 11 form a P-type doped region by the boron element. Of course, in other embodiments, the third main group element may be other, which is not described herein.
Example IV
In some alternative embodiments, the fifth main group element is a phosphorus element. The doped layer 12 and the first silicon oxide layer 11 form an N-type doped region by means of a phosphorus element. Of course, in other embodiments, the fifth main group element may be other, which is not described herein.
Example five
In some alternative embodiments, the thickness of both the first silicon oxide layer 11 and the second silicon oxide layer 13 is less than or equal to 3nm. I.e. the thickness of the first silicon oxide layer 11 is less than or equal to 3nm and the thickness of the second silicon oxide layer 13 is also less than or equal to 3nm.
In this way, the thicknesses of the first silicon oxide layer 11 and the second silicon oxide layer 13 are respectively in proper ranges, so that the gettering and conductive effects of the first silicon oxide layer 11 are good, and the effects of blocking the diffusion of metal impurities and enabling H ions to pass through quickly are good for the second silicon oxide layer 13.
Specifically, the thickness of the first silicon oxide layer 11 is, for example, 2.9nm, 2.8nm, 2.5nm, 2.2nm, 2nm, 1.5nm, 1nm, 0.8nm, 0.5nm.
Specifically, the thickness of the second silicon dioxide layer 13 is, for example, 0.5nm, 0.8nm, 1nm, 1.2nm, 1.5nm, 2nm, 2.5nm, 2.8nm, 3nm.
Example six
In some alternative embodiments, the first silicon oxide layer 11 has a thickness less than or equal to 2.5nm and the second silicon oxide layer 13 has a thickness less than or equal to 2nm.
Thus, the thicknesses of the first silicon oxide layer 11 and the second silicon oxide layer 13 are respectively in a more appropriate range, so that the gettering and conducting effects of the first silicon oxide layer 11 are better, and the effects of blocking the diffusion of metal impurities and enabling H ions to pass through quickly are better for the second silicon oxide layer 13.
Specifically, the thickness of the first silicon oxide layer 11 is, for example, 0.5nm, 0.8nm, 1nm, 1.2nm, 1.5nm, 1.8nm, 2nm, 2.3nm, 2.5nm.
Specifically, the thickness of the second silicon dioxide layer 13 is, for example, 0.5nm, 1nm, 1.2nm, 1.5nm, 1.8nm, 1.9nm, 2nm.
Specifically, in the first silicon oxide layer 11, 80% or more of silicon oxide is concentrated in a thickness region of 0.5nm to 2.5nm. The silicon oxide content of the partial region is greater and a higher thickness of more than 2.5mm is exhibited in the first silicon oxide layer 11. That is, the thickness of the first silicon oxide layer 11 in the thin region 111 is 0.5nm to 2.5nm, and the thickness of the first silicon oxide layer 11 in the non-thin region 112 is greater than 2.5mm.
Example seven
In some alternative embodiments, doped layer 12 is a doped polysilicon layer.
Therefore, compared with the first silicon oxide layer 11, the intrinsic polysilicon layer is more easily doped into the doped polysilicon layer, so that the doping of the intrinsic polysilicon layer can be prevented from influencing the first silicon oxide layer 11, and the normal preparation and functions of the first silicon oxide layer 11 and the doped polysilicon layer are ensured. Furthermore, the doped polysilicon layer may block diffusion of metal impurities and allow H ions in the passivation layer 14 to rapidly penetrate during heat treatment such as sintering, annealing, etc., to reach the silicon substrate 101, thereby forming effective H passivation.
In the example of fig. 2, the brightness of the doped layer 12 is between the first silicon oxide layer 11 and the silicon substrate 101. Specifically, the doped layer 12 is darker than the first silicon oxide layer 11 and brighter than the silicon substrate 101. The doped layer 12 is formed with blocks having different brightness and different doping concentrations. The luminance difference between the doped layer 12 and the thin region 111 of the first silicon oxide layer 11 is large, forming a distinct boundary. The luminance difference between doped layer 12 and non-thin region 112 of first silicon oxide layer 11 is small, but the boundary line is still visible.
Example eight
In some alternative embodiments, passivation layer 14 is one or a combination of an oxide layer, a silicon carbide layer, and an amorphous silicon layer.
Thus, a good passivation effect is achieved.
For example, the passivation layer 14 is an oxide layer of a single material; as another example, passivation layer 14 is a combination of oxide layers of various materials and amorphous silicon layers; for another example, the passivation layer 14 is a combination of multiple layers of amorphous silicon of different refractive indices of a single material. The passivation layer 14 may be a silicon oxynitride layer, a silicon nitride layer, or the like. It will be appreciated that the specific structural arrangement of the passivation layer 14 includes, but is not limited to, the several ways listed above, and the passivation layer 14 may be correspondingly disposed according to actual use needs, which is not specifically limited herein.
Further, the passivation layer 14 thereof has a thickness of 0.5-10nm. Preferably, the passivation layer 14 has a thickness of preferably 0.8-2nm. It will be appreciated that the thickness of the passivation layer 14 may be set as in the prior art, or may be set thicker than the prior art, etc., according to the actual use requirements, and is not specifically limited herein.
Preferably, the passivation layer 14 is an oxide layer and a silicon carbide layer sequentially arranged outward from the second silicon oxide layer 13. Further, the oxide layer is preferably one or more of a silicon oxide layer and an aluminum oxide layer. Further, the silicon carbide layer includes a hydrogenated silicon carbide layer, and hydrogen in the hydrogenated silicon carbide layer enters the silicon substrate 101 under the action of a diffusion mechanism and a thermal effect, so that dangling bonds on the back surface of the silicon substrate 101 can be neutralized, and defects of the silicon substrate 101 are passivated, so that an energy band in a forbidden band is converted into a valence band or a conduction band, and the probability that carriers enter the second silicon dioxide layer 13 through the passivation layer 14 is improved.
Example nine
Referring to fig. 3, the solar cell 100 of the embodiment of the present application is a topcon cell or a back contact cell, and the topcon cell or the back contact cell includes the passivation contact structure 10 of the solar cell 100 according to any one of the first to eighth embodiments.
In the solar cell 100 of the embodiment, the local area of the first silicon oxide layer 11 includes the thin area 111, the content of the silicon oxide material in the first silicon oxide layer 11 is reduced in the thin area 111, the area except the thin area 111 is the non-thin area 112, the silicon oxide content of the thin area 111 is lower than the silicon oxide content of the non-thin area 112, and the local area of the first silicon oxide layer 11 is thin, so that the rapid passing of H is allowed, the H passivation effect can be effectively improved, and the difficulty of heat treatment control is reduced.
Specifically, in the case where the solar cell 100 is a back contact cell, the conductive regions of both polarities P, N are provided on one surface of the back contact cell at intervals. In the case where the solar cell 100 is a double-sided contact cell, the P, N two-polarity conductive layers are disposed on both sides of the back contact cell.
Further, the conductive regions of both polarities may be the passivation contact structure 10 of the solar cell 100 of any one of the first to eighth embodiments; the P-type conductive region may be the passivation contact structure 10 of the solar cell 100 according to any one of the first to eighth embodiments, and the n-type conductive region may not be the passivation contact structure 10 of the solar cell 100 according to any one of the first to eighth embodiments; the N-type conductive region may be the passivation contact structure 10 of the solar cell 100 according to any one of the first to eighth embodiments, and the p-type conductive region may not be the passivation contact structure 10 of the solar cell 100 according to any one of the first to eighth embodiments.
Further, the solar cell 100 includes electrodes of both polarities P, N, i.e., the first electrode 191 and the second electrode 192 in fig. 3, respectively, connected to the silicon substrate 101 through conductive regions of both polarities P, N.
Examples ten
The solar cell module of the embodiment of the present application includes the solar cell 100 of the ninth embodiment.
In the solar cell module of the embodiment of the present application, the local area of the first silicon oxide layer 11 includes the thin area 111, the content of the silicon oxide material in the first silicon oxide layer 11 is reduced in the thin area 111, the area other than the thin area 111 is the non-thin area 112, the silicon oxide content in the thin area 111 is lower than the silicon oxide content in the non-thin area 112, and the local area of the first silicon oxide layer 11 is thin, so that the rapid passing of H is allowed, the H passivation effect can be effectively improved, and the difficulty of heat treatment control is reduced.
In this embodiment, a plurality of solar cells 100 in the solar cell module may be serially connected in sequence to form a cell string, so as to realize serial bus output of current, for example, serial connection of the battery pieces may be realized by providing a solder strip (bus bar, interconnection bar), a conductive back plate, and the like.
It is understood that in such embodiments, the solar module may also include a metal frame, a back sheet, photovoltaic glass, and a glue film. The adhesive film may be filled between the front and back surfaces of the solar cell 100 and the photovoltaic glass, adjacent cells, etc., and as a filler, it may be a transparent adhesive with good light transmittance and aging resistance, for example, the adhesive film may be an EVA adhesive film or a POE adhesive film, and may be specifically selected according to practical situations, which is not limited herein.
The photovoltaic glass may be coated on the adhesive film on the front surface of the solar cell 100, and the photovoltaic glass may be ultra-white glass having high light transmittance, high transparency, and excellent physical, mechanical, and optical properties, for example, the ultra-white glass may have a light transmittance of 92% or more, which may protect the solar cell 100 without affecting the efficiency of the solar cell 100 as much as possible. Meanwhile, the photovoltaic glass and the solar cell 100 can be bonded together by the adhesive film, and the solar cell 100 can be sealed and insulated and waterproof and moistureproof by the adhesive film.
The back plate can be attached to an adhesive film on the back of the solar cell 100, can protect and support the solar cell 100, has reliable insulativity, water resistance and aging resistance, can be selected multiple times, and can be toughened glass, organic glass, an aluminum alloy TPT composite adhesive film and the like, and the back plate can be specifically set according to specific conditions without limitation. The whole of the back plate, the solar cell 100, the adhesive film and the photovoltaic glass may be disposed on a metal frame, which serves as a main external support structure of the whole solar cell module, and may stably support and mount the solar cell module, for example, the solar cell module may be mounted at a desired mounting position through the metal frame.
Example eleven
The solar cell system of the embodiment of the application includes the solar cell module of embodiment ten.
In the solar cell system of the embodiment of the present application, the local area of the first silicon oxide layer 11 includes the thin area 111, the content of the silicon oxide material in the first silicon oxide layer 11 is reduced in the thin area 111, the area other than the thin area 111 is the non-thin area 112, the silicon oxide content in the thin area 111 is lower than the silicon oxide content in the non-thin area 112, and the local area of the first silicon oxide layer 11 is thin, so that the rapid passing of H is allowed, the H passivation effect can be effectively improved, and the difficulty of heat treatment control is reduced.
In this embodiment, the solar cell system may be applied to a photovoltaic power station, such as a ground power station, a roof power station, a water power station, or the like, and may also be applied to a device or apparatus that uses solar energy to generate power, such as a user solar power source, a solar street lamp, a solar car, a solar building, or the like. Of course, it is understood that the application scenario of the solar cell system is not limited thereto, that is, the solar cell system may be applied to all fields where power generation using solar energy is required. Taking a photovoltaic power generation system network as an example, the solar battery system can comprise a photovoltaic array, a junction box and an inverter, wherein the photovoltaic array can be an array combination of a plurality of solar battery components, for example, the plurality of solar battery components can form a plurality of photovoltaic arrays, the photovoltaic arrays are connected with the junction box, the junction box can conduct junction on currents generated by the photovoltaic arrays, and the currents after junction flow through the inverter to be converted into alternating currents required by a commercial power network and then are connected into the commercial power network to realize solar power supply.
The foregoing description of the preferred embodiment of the present utility model is not intended to limit the utility model to the particular form disclosed, but on the contrary, the intention is to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the utility model. Furthermore, the particular features, structures, materials, or characteristics described in the various embodiments or examples of the application may be combined in any suitable manner in any one or more embodiments or examples.
Claims (11)
1. A passivation contact structure for a solar cell, comprising:
a silicon substrate;
the first silicon oxide layer, the doped layer, the second silicon oxide layer and the passivation layer are sequentially arranged on the silicon substrate;
the partial region of the first silicon oxide layer comprises a thin region, and the content of silicon oxide substances in the first silicon oxide layer is reduced in the thin region.
2. The passivation contact structure of claim 1, wherein the doping elements of the doped layer and the first silicon oxide layer are both a third main group element or a fifth main group element.
3. The passivation contact structure of claim 2, wherein the third main group element is boron.
4. The passivation contact structure of claim 2, wherein the fifth main group element is a phosphorus element.
5. The passivation contact structure of claim 1, wherein the thickness of the first silicon oxide layer and the second silicon oxide layer are each less than or equal to 3nm.
6. The solar cell passivation contact structure of claim 5, wherein the first silicon oxide layer thickness is less than or equal to 2.5nm and the second silicon oxide layer thickness is less than or equal to 2nm.
7. The solar cell passivation contact of claim 1, wherein the doped layer is a doped polysilicon layer.
8. The passivation contact structure of claim 1, wherein the passivation layer is one or more of an oxide layer, a silicon carbide layer, and an amorphous silicon layer.
9. A solar cell, characterized in that the solar cell is a topcon cell or a back contact cell comprising a passivation contact structure of the solar cell according to any of claims 1 to 8.
10. A solar cell assembly comprising the solar cell of claim 9.
11. A solar cell system, characterized in that the solar cell system comprises a solar cell assembly according to claim 10.
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| WO2024131179A1 (en) * | 2022-12-19 | 2024-06-27 | 浙江爱旭太阳能科技有限公司 | Passivated contact structure, solar cell, module and system |
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| WO2024131179A1 (en) * | 2022-12-19 | 2024-06-27 | 浙江爱旭太阳能科技有限公司 | Passivated contact structure, solar cell, module and system |
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