CN217306521U - Solar cell and photovoltaic module - Google Patents
Solar cell and photovoltaic module Download PDFInfo
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- CN217306521U CN217306521U CN202123027490.9U CN202123027490U CN217306521U CN 217306521 U CN217306521 U CN 217306521U CN 202123027490 U CN202123027490 U CN 202123027490U CN 217306521 U CN217306521 U CN 217306521U
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Abstract
The embodiment of the application provides a solar cell and a photovoltaic module, wherein the solar cell includes: a substrate having opposing front and back sides; the front passivation layer is positioned on the front surface of the substrate; the passivation contact structure penetrates through a partial region of the front passivation layer and is in contact with the front surface of the substrate; the first transparent conducting layer covers the surface of the front passivation layer and the surface of the passivation contact structure; the front electrode is positioned on the surface of the first transparent conducting layer and is opposite to the passivation contact structure; the back passivation layer is positioned on the back of the substrate; the second transparent conducting layer is positioned on the surface, away from the substrate, of the back passivation layer; the back electrode is located on the surface of the second transparent conducting layer.
Description
Technical Field
The embodiment of the application relates to the field of photovoltaics, in particular to a solar cell and a photovoltaic module.
Background
With the increasing shortage of energy, the development and utilization of renewable energy are in need. Among a plurality of renewable energy sources, the solar energy has the outstanding advantages of no exhaustion danger, safety, reliability, no noise, no pollution emission, no limitation of resource distribution regions in application and the like.
Solar cells are used for converting solar energy into electrical energy, and are generally formed by steps of cleaning silicon wafers, texturing, thermal diffusion, phosphorosilicate glass removal, etching and edge removal, PECVD (plasma enhanced chemical vapor deposition) antireflection film plating, screen printing of electrodes, sintering and the like.
However, the current solar cell has a problem of low photoelectric conversion efficiency.
SUMMERY OF THE UTILITY MODEL
The embodiment of the application provides a solar cell and a photovoltaic module, which are beneficial to improving the photoelectric conversion efficiency of the solar cell.
According to some embodiments of the present application, there is provided in one aspect a solar cell including: a substrate having opposing front and back sides; a front passivation layer on the front side of the substrate; a passivation contact structure penetrating a partial region of the front side passivation layer and making contact with the front side of the substrate; the first transparent conducting layer covers the surface of the front passivation layer and the surface of the passivation contact structure; the front electrode is positioned on the surface of the first transparent conducting layer and is opposite to the passivation contact structure; a back passivation layer on the back side of the substrate; the second transparent conducting layer is positioned on the surface, far away from the substrate, of the back passivation layer; and the back electrode is positioned on the surface of the second transparent conducting layer.
In addition, the front passivation layer comprises at least one of a silicon oxide layer, a silicon nitride layer, a silicon oxynitride layer and an aluminum oxide layer.
In addition, in the direction perpendicular to the front surface of the substrate, the front passivation layer comprises an aluminum oxide layer and a silicon nitride layer, wherein the aluminum oxide layer is 2-10nm thick, and the silicon nitride layer is 20-150nm thick.
In addition, the first transparent conducting layer and the second transparent conducting layer are both one of an indium tin oxide layer, a tungsten-doped indium oxide layer, a titanium-doped indium oxide layer or a hydrogen-doped indium oxide layer.
The first transparent conductive layer and the second transparent conductive layer have a thickness of 1nm to 20 nm.
In addition, the thickness of the passivation contact structure is greater than the thickness of the front passivation layer.
In addition, the passivation contact structure includes: a first oxide layer on a portion of the front surface of the substrate; and the first doped polycrystalline silicon layer is positioned on the surface of the first oxidation layer far away from the substrate.
In addition, the back passivation layer includes: a second oxide layer on the back side of the substrate; and the second doped polycrystalline silicon layer is positioned on the surface of the second oxide layer, which is far away from the substrate.
In addition, the doping type of the first doped polysilicon layer is opposite to that of the second doped polysilicon layer.
According to some embodiments of the present application, there is also provided in another aspect a photovoltaic module, including: a battery string formed by connecting a plurality of the solar cells; an encapsulation layer for covering a surface of the battery string; and the cover plate is used for covering the surface of the packaging layer far away from the battery string.
The technical scheme provided by the embodiment of the application has at least the following advantages: the front passivation layer positioned on the front side of the substrate can provide a good surface passivation effect for the solar cell, parasitic light absorption can be reduced through the passivation contact structure, the first transparent conducting layer can be used as an antireflection layer of the solar cell and can transmit current, the solar cell with complete functions is formed by forming the front electrode, the back passivation layer, the second transparent conducting layer and the back cell, and the solar cell with the structures has better photoelectric conversion efficiency.
Drawings
One or more embodiments are illustrated by way of example in the accompanying drawings, which correspond to the figures in which like reference numerals refer to similar elements and which are not to scale unless otherwise specified.
Fig. 1 is a schematic structural diagram of a solar cell according to an embodiment of the present disclosure;
fig. 2 is a schematic structural diagram of another solar cell provided in an embodiment of the present application;
fig. 3 is a schematic structural diagram of a photovoltaic module according to an embodiment of the present application.
Detailed Description
The embodiment of the application provides a solar cell, which can increase incident light flux by forming a first transparent conducting layer on a front passivation layer and a passivation contact structure surface, and can reduce the transverse transmission loss of the cell, thereby improving the photoelectric conversion efficiency of the solar cell.
Embodiments of the present application will be described in detail below with reference to the accompanying drawings. However, it will be appreciated by those of ordinary skill in the art that in the embodiments of the present application, numerous technical details are set forth in order to provide a better understanding of the embodiments of the present application. However, the technical solutions claimed in the embodiments of the present application can be implemented without these technical details and with various changes and modifications based on the following embodiments.
Fig. 1 is a schematic structural diagram of a solar cell provided in an embodiment of the present application, and fig. 2 is a schematic structural diagram of another solar cell provided in the embodiment of the present application.
Specifically, referring to fig. 1 and 2, the solar cell includes: a substrate 100, the substrate 100 having a front surface and a back surface opposite to each other; a front passivation layer 110, the front passivation layer 110 being located on the front surface of the substrate 100; a passivation contact structure 120, wherein the passivation contact structure 120 penetrates through a partial region of the front passivation layer 110 and contacts the front surface of the substrate 100; a first transparent conductive layer 130, wherein the first transparent conductive layer 130 covers the surface of the front passivation layer 110 and the surface of the passivation contact structure 120; a front electrode 140, wherein the front electrode 140 is located on the surface of the first transparent conductive layer 130 and is opposite to the passivation contact structure 120; a back passivation layer 150, the back passivation layer 150 being located on the back surface of the substrate 100; a second transparent conductive layer 160, wherein the second transparent conductive layer 160 is located on the surface of the back passivation layer 150 away from the substrate 100; and the back electrode 170, wherein the back electrode 170 is positioned on the surface of the second transparent conductive layer 160.
By arranging the front passivation layer 110 on a local area of the front surface of the substrate 100, good surface passivation can be provided for the front surface of the solar cell; a passivation contact structure 120 is disposed in a partial region of the front surface of the substrate 100, the passivation contact structure 120 penetrates through a partial region of the front passivation layer 110 and is in contact with the front surface of the substrate 100, and parasitic light absorption of the passivation contact structure 120 can be reduced by forming a partial passivation on the surface of the substrate 100; the first transparent conductive layer 130 is formed on the surfaces of the front passivation layer 110 and the passivation contact structure 120, so that the incident light flux can be increased, and the first transparent conductive layer can be in contact with the front electrode 140 and the front passivation layer 110, thereby further reducing the lateral transmission loss and further improving the photoelectric conversion efficiency of the solar cell.
Specifically, in some embodiments, the substrate 100 may be an N-type substrate or a P-type substrate, and taking the material of the substrate 100 as monocrystalline silicon as an example, phosphorus is doped in the monocrystalline silicon, so that the substrate 100 is an N-type substrate; doping boron in the monocrystalline silicon, so that the substrate 100 is a P-type substrate; it should be noted that the N-type substrate may also be formed by doping other atoms, such as: arsenic atoms or antimony atoms, etc., P-type substrates may also be formed by doping other atoms, such as: gallium atoms or indium atoms, and the like.
The conductivity of the substrate 100 may be increased by forming an N-type substrate or a P-type substrate.
In some embodiments, the surface of the substrate 100 is also textured, for example, the substrate is single crystal silicon, potassium hydroxide and a surfactant can be used on the surface of the substrate to form a regular pyramid-like structure on the front surface of the substrate, and the reflectivity of the front surface of the solar cell can be reduced by texturing on the front surface of the substrate 100, that is, when incident light is reflected by the surface of the solar cell after texturing, the reflected light is reflected to an adjacent inclined surface to form multiple absorption. After multiple reflections, the incident light changes the advancing direction of the incident light on the substrate 100, which not only increases the optical path, but also increases the absorption of photons, thereby increasing the collection of photon-generated carriers.
In some embodiments, the method of forming the front passivation layer 110 may be to directly deposit an oxide layer on the surface of the substrate 100, and in some embodiments, the front surface of the substrate 100 is textured, so that the surface structure of the front passivation layer 110 may also be a pyramid structure.
In some embodiments, the front passivation layer 110 may be a single or multi-layer structure, and may be at least one of a hafnium oxide layer, an aluminum oxide layer, a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a magnesium fluoride layer, or a silicon oxycarbonitride layer.
In some embodiments, the front passivation layer 110 may include: an aluminum oxide layer 111 and a silicon nitride layer 112.
In some embodiments, the aluminum oxide layer 111 may be located between the substrate 100 and the silicon nitride layer 112.
The antireflection can be enhanced by arranging the laminated structure of the aluminum oxide layer 111 and the silicon nitride layer 112, that is, by arranging the laminated structure of the aluminum oxide layer 111 and the silicon nitride layer 112, incident light can be reflected for multiple times, so that the antireflection effect of the solar cell on the incident light with different wavelengths in the wide spectral range can be met.
In some embodiments, the thickness of the aluminum oxide layer 111 may be 2 to 10nm, and the tunneling condition may be satisfied by controlling the thickness of the aluminum oxide layer 111 to be 2 to 10nm, so that carriers of the substrate 100 may pass through the aluminum oxide layer 111 and enter the first transparent conductive layer 130, and the carriers may be laterally transmitted in the first transparent conductive layer 130, thereby enhancing the lateral transmission performance of the cell, so that a diffusion layer may not be needed to be used on the front surface of the solar cell for lateral transmission, reducing recombination of the diffusion layer, and the aluminum oxide layer 111 may serve as a passivation layer of the solar cell, thereby increasing the open-circuit voltage of the solar cell, and preventing the generated carriers from being neutralized.
In some embodiments, the thickness of the silicon nitride layer 112 may be 20nm to 150 nm.
By setting the thickness of the silicon nitride layer 112 to be 20-150nm, the silicon nitride layer 112 has a certain thickness under the condition that it is ensured that carriers can satisfy tunneling.
It is understood that when the thickness of the silicon nitride layer 112 is less than 20nm, the effect of reducing the reflection of sunlight is not good, and when the thickness of the silicon nitride layer 112 is greater than 150nm, the transmission efficiency of carriers is low, and by setting the thickness of the silicon nitride layer 112 to be 20nm to 150nm, the effect of reducing reflection can be good while the transmission efficiency of carriers is satisfied.
In some embodiments, the passivation contact structure 120 may include: a first oxide layer 121, wherein the first oxide layer 121 is positioned on a part of the front surface of the substrate 100; a first doped polysilicon layer 122, wherein the first doped polysilicon layer 122 is located on the surface of the first oxide layer 121 away from the substrate 100.
In some embodiments, the first oxide layer 121 may be a silicon oxide layer, and the first doped polysilicon layer 122 may be doped N-type or P-type, respectively, and when the substrate 100 is an N-type substrate, the first doped polysilicon layer 122 may be doped N-type, and when the substrate 100 is a P-type substrate, the first doped polysilicon layer 122 may be doped P-type, respectively.
In some embodiments, the passivation may be provided on the surface of the substrate 100 by disposing the first oxide layer 121, and the thickness of the first oxide layer 121 may be 1 to 5nm, and the tunneling condition may be satisfied by disposing the thickness of the first oxide layer 121 to be 1 to 5nm, so that the carriers move to the first doped polysilicon layer 122.
In some embodiments, the thickness of the first oxide layer 121 may be thinner than the thickness of the front passivation layer 110 in a direction perpendicular to the front surface of the substrate 100.
The first doped polysilicon layer 122 may be in contact with the first transparent conductive layer 130 to transfer carriers collected by the first doped polysilicon layer 122 to the first transparent conductive layer 130.
In some embodiments, the passivation contact structure 120 may be formed on the entire front surface of the substrate 100, and the front passivation layer 110 may be formed after the passivation contact structure 120 is formed by etching a portion of the undesired passivation contact structure 120 to form the final desired passivation contact structure 120.
In some embodiments, the projection of the passivation contact structure 120 on the surface of the substrate 100 and the projection of the front electrode 140 on the surface of the substrate 100 may coincide, and by disposing the passivation contact structure 120 opposite to the front electrode 140, the recombination of carriers on the surface of the front electrode 140 may be reduced, thereby improving the photoelectric conversion efficiency of the solar cell.
In some embodiments, the thickness of the passivation contact structure 120 may be greater than the thickness of the front passivation layer 110.
It can be understood that, in the process of forming the front passivation layer 110, the passivation contact structure 120 is formed first, and if the thickness of the front passivation layer 110 is greater than that of the passivation contact structure 120, the front passivation layer 110 covers the surface of the passivation contact structure 120, and the passivation contact structure 120 is not in direct contact with the first transparent conductive layer 130, which affects the carrier transmission efficiency.
It will be appreciated that the passivation contact structure 120 is directly opposite the front electrode 140, and the electric field strength above the passivation contact structure 120 is higher, so that a thicker passivation contact structure 120 can be provided, and correspondingly, the electric field strength above the front passivation layer 110 is lower, so that a thinner front passivation layer 110 can be provided.
The first doped polysilicon layer 122 may be in direct contact with the first transparent conductive layer 130 by setting the thickness of the passivation contact structure 120 to be greater than the thickness of the front passivation layer 110, thereby improving the carrier transport efficiency.
In some embodiments, the first transparent conductive layer 130 and the second transparent conductive layer 160 are each one of an indium tin oxide layer, a tungsten-doped indium oxide layer, a titanium-doped indium oxide layer, or a hydrogen-doped indium oxide layer.
The first transparent conductive layer 130 itself can transmit light and also has good conductivity, the conductivity of the first transparent conductive layer 130 is better than the conductivity of the front passivation layer 110 and the passivation contact structure 120, and by providing the first transparent conductive layer 130, carriers can be transmitted in the first transparent conductive layer 130 through the front passivation layer 110 and the passivation contact structure 120, and then collected by the front electrode 140.
The first transparent conductive layer 130 may also serve as an anti-reflection layer on the front surface of the solar cell, so as to increase the luminous flux of incident light, and it is understood that, in some embodiments, the substrate 100 of the solar cell is made of silicon, the refractive index of the silicon material is large, light irradiated to the silicon surface by the incident light cannot be sufficiently absorbed, but a large portion of the light is reflected, and the first transparent conductive layer 130 is formed on the substrate 100, so that the reflection loss of the incident light can be reduced, and the photoelectric conversion efficiency of the first transparent conductive layer 130 can be improved.
Since the first transparent conductive layer 130 can conduct electricity laterally, the lateral transmission loss of carriers can be reduced in the carrier transmission process, thereby improving the fill factor of the solar cell.
In some embodiments, the thickness of the first transparent conductive layer 130 and the second transparent conductive layer 160 may be 1nm to 20nm, such as 5nm, 7nm, or 12 nm.
It can be understood that when the first transparent conductive layer 130 is smaller than 1nm, the first transparent conductive layer 130 has a poor effect of reducing reflection loss of incident light, and when the first transparent conductive layer 130 is larger than 20nm, the thickness of the first transparent conductive layer is too thick to affect the transmission time of carriers to the front electrode 140, so that by setting the thickness of the first transparent conductive layer 130 and the second transparent conductive layer 160 to be 1nm to 20nm, the transmission time of carriers can be reduced while the first transparent conductive layer 130 reduces reflection loss of incident light.
In some embodiments, the first transparent conductive layer 130 may be formed on the front passivation layer 110 and the surface of the passivation contact structure 120 by physical vapor deposition.
The thicknesses of the first transparent conductive layer 130 and the second transparent conductive layer 160 can be adjusted according to actual situations, and the thicknesses of the first transparent conductive layer 130 and the second transparent conductive layer 160 are not limited in the embodiments of the present application.
In some embodiments, the front electrode 140 may be a copper electrode, and the front electrode 140 may be formed by directly plating copper on the surface of the first transparent conductive layer 130, which is simpler in process and lower in cost than a conventional method of electroless plating a seed layer metal.
Because the first transparent conductive layer 130 has good conductivity, the process stability can be ensured by directly plating copper on the first transparent conductive layer 130, and the yield of the electroplated front electrode 140 can be ensured to be good.
In some embodiments, a silver layer may be further plated on the surface of the front electrode 140, and the copper electrode may be protected from oxidation by the silver layer plated on the surface of the front electrode 140.
In some embodiments, the backside passivation layer 150 includes: a second oxide layer 151, the second oxide layer 151 being located on the back surface of the substrate 100; and a second doped polysilicon layer 152, wherein the second doped polysilicon layer 152 is located on the surface of the second oxide layer 151 away from the substrate 100.
In some embodiments, the second oxide layer 151 may be a silicon oxide layer, a silicon nitride layer, or the like, and the second oxide layer 151 may provide a good passivation effect for the back surface of the solar cell, and the second oxide layer 151 may form a bond with a floating bond of a defect (such as Dislocation, grain boundary, point defect) on the surface of the substrate 100, so as to effectively reduce the recombination rate of electron-hole pairs on the silicon surface and the defect, and further improve the lifetime of minority carriers, thereby achieving the purpose of improving the efficiency of the solar cell.
The second doped polysilicon layer 152 may be used to contact the surface of the substrate 100 and the second transparent conductive layer 160, and collect carriers of the substrate 100 and transmit the carriers to the second transparent conductive layer 160 to transmit current, and the second transparent conductive layer 160 itself may transmit light and have good conductivity, and the photoelectric conversion efficiency of the solar cell may be improved by providing the second transparent conductive layer 160.
In some embodiments, the thickness of the second oxide layer 151 may be less than the second doped polysilicon layer 152 in a direction perpendicular to the back surface of the substrate 100.
In some embodiments, the substrate 100 is doped N-type, and the second doped polysilicon layer 152 may be doped P-type; accordingly, the substrate 100 is doped P-type, and the second doped polysilicon layer 152 may be doped N-type.
In some embodiments, the second transparent conductive layer 160 may be formed by physical vapor deposition directly on the surface of the back passivation layer 150, and the second transparent conductive layer 160 may also serve as an anti-reflective layer on the front surface of the solar cell, thereby increasing the luminous flux of incident light.
In some embodiments, the doping type of the first doped polysilicon layer 122 is opposite to that of the second doped polysilicon layer 152, and the power generation efficiency of the solar cell may be increased by the opposite doping type of the both sides. For example, the first doped polysilicon layer 122 may be doped N-type, and the second doped polysilicon layer 152 may be doped P-type; accordingly, the first doped polysilicon layer 122 is doped P-type and the second doped polysilicon layer 152 is doped N-type.
In some embodiments, the back electrode 170 may be a copper electrode, and the back electrode 170 may be formed by directly plating copper on the surface of the second transparent conductive layer 160, so that the solar cell provided by the present disclosure has a simpler production process and a lower cost compared to a conventional electroless plating of a seed layer metal.
In some embodiments, a silver layer may be plated on the surface of the back electrode 170, and the copper electrode may be protected from oxidation by the silver layer plated on the surface of the back electrode 170.
Similar to the front electrode 140, the stability of the process can be ensured by directly plating copper on the surface of the second transparent conductive layer 160, and the yield of the plated front electrode 140 can be ensured to be good, thereby meeting the yield requirement of mass production.
According to the embodiment of the application, the first transparent conducting layer 130 is arranged between the front electrode 140 and the passivation contact structure 120 of the solar cell, the incident light flux of the solar cell can be increased through the first transparent conducting layer 130, the transverse transmission loss of carriers of the solar cell can be reduced, the recombination of the carriers at the front electrode 140 can be reduced through the passivation contact structure 120 which is arranged right opposite to the front electrode 140, the parasitic light absorption can also be reduced through the passivation contact structure 120, and the photoelectric conversion efficiency of the solar cell can be improved beneficially through the front passivation layer 110, the passivation contact structure 120, the first transparent conducting layer 130, the back passivation layer 150 and the second transparent conducting layer 160.
The embodiment of the present application further provides a photovoltaic module, and referring to fig. 3, the photovoltaic module includes a battery string formed by connecting the solar cells 180 provided in the above embodiment; the packaging layer 190, the packaging layer 190 is used for covering the surface of the battery string; and the cover plate 200 is used for covering the surface of the packaging layer 190 far away from the battery string. The solar cells 180 are electrically connected in a single or multi-piece manner to form a plurality of cell strings, and the plurality of cell strings are electrically connected in series and/or parallel.
Specifically, in some embodiments, multiple battery strings may be electrically connected therebetween by the conductive strip 210. The encapsulation layer 190 covers the front and the back of the solar cell 180, and specifically, the encapsulation layer 190 may be an organic encapsulation adhesive film such as an ethylene-vinyl acetate copolymer (EVA) adhesive film, a polyethylene octene co-elastomer (POE) adhesive film, or a polyethylene terephthalate (PET) adhesive film. In some embodiments, the cover plate 200 may be a glass cover plate, a plastic cover plate, or the like, which has a light-transmitting function 200. Specifically, the surface of the cover plate 200 facing the encapsulation layer 190 may be a concave-convex surface, thereby increasing the utilization rate of incident light.
In the solar cell of the photovoltaic module provided in the embodiment of the present application, by disposing the first transparent conductive layer 130 between the front electrode 140 and the passivation contact structure 120 of the solar cell, the incident light flux of the solar cell may be increased by the first transparent conductive layer 130, and the lateral transfer loss of carriers of the solar cell may be reduced, the recombination of carriers at the front electrode 140 can be reduced by providing the passivation contact structure 120 directly opposite the front electrode 140, and the passivation contact structure 120 can also reduce parasitic absorption, the front passivation layer 110, the passivation contact structure 120, the first transparent conductive layer 130, the back passivation layer 150 and the second transparent conductive layer 160 are beneficial to improve the photoelectric conversion efficiency of the solar cell sheet 180, therefore, when the solar cell 180 is prepared into a photovoltaic module, the photovoltaic module has better photoelectric conversion efficiency.
It will be understood by those of ordinary skill in the art that the foregoing embodiments are specific examples for carrying out the present application, and that various changes in form and details may be made therein without departing from the spirit and scope of the embodiments of the present application in practice. Various changes and modifications may be effected therein by one of ordinary skill in the pertinent art without departing from the scope or spirit of the embodiments of the present disclosure, and it is intended that the scope of the embodiments of the present disclosure be defined by the appended claims.
Claims (10)
1. A solar cell, comprising:
a substrate having opposing front and back sides;
a front passivation layer on the front side of the substrate;
a passivation contact structure penetrating a partial region of the front side passivation layer and making contact with the front side of the substrate;
the first transparent conducting layer covers the surface of the front passivation layer and the surface of the passivation contact structure;
the front electrode is positioned on the surface of the first transparent conducting layer and is opposite to the passivation contact structure;
a back passivation layer on the back side of the substrate;
the second transparent conducting layer is positioned on the surface, away from the substrate, of the back passivation layer;
and the back electrode is positioned on the surface of the second transparent conducting layer.
2. The solar cell of claim 1, wherein the front side passivation layer comprises at least one of a silicon oxide layer, a silicon nitride layer, a silicon oxynitride layer, and an aluminum oxide layer.
3. The solar cell of claim 2, wherein the front side passivation layer comprises an aluminum oxide layer and a silicon nitride layer in a direction perpendicular to the front side of the substrate, wherein the aluminum oxide layer has a thickness of 2-10nm and the silicon nitride layer has a thickness of 20-150 nm.
4. The solar cell of claim 1, wherein the first transparent conductive layer and the second transparent conductive layer are each one of an indium tin oxide layer, a tungsten doped indium oxide layer, a titanium doped indium oxide layer, or a hydrogen doped indium oxide layer.
5. The solar cell according to claim 4, wherein the first transparent conductive layer and the second transparent conductive layer have a thickness of 1nm to 20 nm.
6. The solar cell of claim 1, wherein the passivation contact structure has a thickness greater than a thickness of the front side passivation layer.
7. The solar cell of claim 1, wherein the passivation contact structure comprises:
a first oxide layer positioned on a part of the front surface of the substrate;
and the first doped polycrystalline silicon layer is positioned on the surface of the first oxidation layer far away from the substrate.
8. The solar cell of claim 7, wherein the back passivation layer comprises:
a second oxide layer on the back side of the substrate;
and the second doped polycrystalline silicon layer is positioned on the surface of the second oxide layer, which is far away from the substrate.
9. The solar cell of claim 8, wherein a doping type of the first doped polysilicon layer is opposite to a doping type of the second doped polysilicon layer.
10. A photovoltaic module, comprising:
a battery string formed by connecting a plurality of solar cells according to any one of claims 1 to 9;
an encapsulation layer for covering a surface of the battery string;
and the cover plate is used for covering the surface of the packaging layer, which is far away from the battery string.
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| CN202123027490.9U CN217306521U (en) | 2021-12-03 | 2021-12-03 | Solar cell and photovoltaic module |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11791426B1 (en) | 2022-09-08 | 2023-10-17 | Zhejiang Jinko Solar Co., Ltd. | Photovoltaic cell and photovoltaic module |
| US11923468B1 (en) | 2022-09-08 | 2024-03-05 | Zhejiang Jinko Solar Co., Ltd. | Photovoltaic cell and photovoltaic module |
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2021
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11791426B1 (en) | 2022-09-08 | 2023-10-17 | Zhejiang Jinko Solar Co., Ltd. | Photovoltaic cell and photovoltaic module |
| US11923468B1 (en) | 2022-09-08 | 2024-03-05 | Zhejiang Jinko Solar Co., Ltd. | Photovoltaic cell and photovoltaic module |
| EP4336570A1 (en) * | 2022-09-08 | 2024-03-13 | Zhejiang Jinko Solar Co., Ltd. | Photovoltaic cell and photovoltaic module |
| NL2034427B1 (en) * | 2022-09-08 | 2024-03-21 | Zhejiang Jinko Solar Co Ltd | Photovoltaic cell and photovoltaic module |
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