CN117826323A - Double-layer heat insulation mode converter - Google Patents
Double-layer heat insulation mode converter Download PDFInfo
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- CN117826323A CN117826323A CN202410120552.XA CN202410120552A CN117826323A CN 117826323 A CN117826323 A CN 117826323A CN 202410120552 A CN202410120552 A CN 202410120552A CN 117826323 A CN117826323 A CN 117826323A
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- 238000009413 insulation Methods 0.000 title claims abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 53
- 238000005253 cladding Methods 0.000 claims abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 230000007704 transition Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 15
- 238000006243 chemical reaction Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002355 dual-layer Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/14—Mode converters
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1228—Tapered waveguides, e.g. integrated spot-size transformers
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/126—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind using polarisation effects
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optical Integrated Circuits (AREA)
Abstract
The invention belongs to the technical field of integrated photoelectrons, and particularly relates to a double-layer heat insulation mode converter. The invention comprises a first silicon core, a second silicon core and a cladding; cladding layers are arranged around the first silicon core and the second silicon core; the first silicon core is arranged below the second silicon core; along the light beam propagation direction, the first silicon core comprises an input end, a first adiabatic taper waveguide, a second adiabatic taper waveguide, a third adiabatic taper waveguide, a fourth adiabatic taper waveguide, a fifth adiabatic taper waveguide, a sixth adiabatic taper waveguide, a seventh adiabatic taper waveguide, an eighth adiabatic taper waveguide, a ninth adiabatic taper waveguide, a tenth adiabatic taper waveguide, an eleventh adiabatic taper waveguide, a twelfth adiabatic taper waveguide and an output end which are sequentially connected. The double-layer adiabatic mode converter of the invention can realize TM 0 Mode and TE 1 Transition between modes is transmitted.
Description
Technical Field
The invention belongs to the technical field of integrated photoelectrons, and particularly relates to a double-layer heat insulation mode converter.
Background
The photon integrated chip is a core element of a modern optical communication device, and a plurality of photon chips can be integrated on one chip, so that integration and cooperation of multiple functions are realized. In future large-scale photonic integrated chips, silicon-on-Insulator (SOI) platforms using high refractive index contrast silicon photonic optical power couplers are ideal candidates for large-scale photonic integration in optical communications, as embodied in paper K.Solehmainen, M.Kapulainen, M.Harjanne, andT.Aalto, "Adiabatic and Multimode Interference Couplers on Silicon-on-Insulator," IEEE photon technology letters, vol.18, no.21, pp.2287-2289, nov.2006.
An adiabatic mode converter in an optical waveguide is one of the basic elements of a photonic integrated chip, typically used for mode conversion between different modes, to improve the coupling efficiency between two different cross sections (e.g. planar optical waveguide and single mode or optical fiber), as embodied in the paper Tu-Lu light, xi chem, jin Shi, gangxiong Wu, kai Xu, weiweiwei Rong, longlong Lin, and Wei Shao, "Analysis and design ofcompact adiabatic mode converters based on adiabatic mode evolutions," j. To achieve low loss mode conversion, adiabatic mode converters typically require a large size to achieve adiabatic transmission so that higher order modes or radiation modes are not excited.
Disclosure of Invention
The invention aims to provide a double-layer heat-insulating mode converter, which is small in size, low in loss, high in conversion efficiency and simple in structure.
In order to achieve the aim of the invention, the technical scheme adopted by the invention is as follows:
a double-layer heat insulation mode converter comprises a first silicon core, a second silicon core and a cladding; cladding layers are arranged around the first silicon core and the second silicon core; the first silicon core is arranged below the second silicon core; along the propagation direction of the light beam, the first silicon core comprises an input end, a first adiabatic taper waveguide, a second adiabatic taper waveguide, a third adiabatic taper waveguide, a fourth adiabatic taper waveguide, a fifth adiabatic taper waveguide, a sixth adiabatic taper waveguide, a seventh adiabatic taper waveguide, an eighth adiabatic taper waveguide, a ninth adiabatic taper waveguide, a tenth adiabatic taper waveguide, an eleventh adiabatic taper waveguide, a twelfth adiabatic taper waveguide and an output end which are sequentially connected.
Further as a preferable technical scheme of the invention, the material of the cladding is SiO 2 Refractive index n SiO2 =1.445, width W 0 Thickness is h 0 The method comprises the steps of carrying out a first treatment on the surface of the The width and the height are respectively set as W 0 =9μm and h 0 ＝1250nm。
Further as a preferable technical scheme of the invention, the refractive indexes of the first silicon core and the second silicon core are n Si = 3.455; the thickness of the second silicon core is h 2 =200 nm, width W; the thickness of the first silicon core is h 1 =200 nm, width w=2w side +W, where W side Is the width of the side rib; the width of the second silicon core is constant to w=1μm; the incident beam wavelength was set to 1.55 μm.
Further as a preferable embodiment of the present invention, the width W of the side rib of the input end of the first silicon core side =3μm, width w I ＝2W side +w=7μm; width W of side rib of output end side =0, width w O ＝2W side +W＝1μm。
Further as a preferred embodiment of the present invention, the input end in the first silicon core andthe output ends are all parallel plate waveguides with the width w respectively I =7μm and w O Length l=1 μm I And L O All were 5000nm.
Further as a preferable technical scheme of the invention, the initial end waveguide width and the tail end width of the first heat insulation tapered waveguide are respectively w 1 =7μm and w 2 Length l=2.2 μm 1 =13976 nm; the initial end waveguide width and the tail end width of the second adiabatic taper waveguide are respectively w 2 =2.2 μm and w 3 Length l=1.8 μm 2 = 37882nm; the initial end waveguide width and the tail end width of the third adiabatic taper waveguide are respectively w 3 =1.8 μm and w 4 Length l=1.62 μm 3 = 39619nm; the initial end waveguide width and the tail end width of the fourth adiabatic taper waveguide are respectively w 4 =1.62 μm and w 5 Length l=1.50 μm 4 = 41595nm; the initial end waveguide width and the final end width of the fifth adiabatic taper waveguide are w respectively 5 =1.50 μm and w 6 Length l=1.42 μm 5 = 40360nm; the initial end waveguide width and the final end width of the sixth adiabatic taper waveguide are w respectively 6 =1.42 μm and w 7 Length l=1.36 μm 6 = 38096nm; the initial end waveguide width and the tail end width of the seventh adiabatic taper waveguide are respectively w 7 =1.36 μm and w 8 Length l=1.30 μm 7 = 36932nm; the initial end waveguide width and the final end width of the eighth adiabatic taper waveguide are w respectively 8 =1.30 μm and w 9 Length l=1.24 μm 8 = 33711nm; the initial end waveguide width and the final end width of the ninth adiabatic taper waveguide are w respectively 9 =1.24 μm and w 10 Length l=1.18 μm 9 =28920nm; the initial end waveguide width and the final end width of the tenth adiabatic taper waveguide are w respectively 10 =1.18 μm and w 11 Length l=1.12 μm 10 =23456 nm; the eleventh adiabatic taper waveguide has an initial end waveguide width and a terminal end width of w, respectively 11 =1.12 μm and w 12 Length l=1.06 μm 11 = 18276nm; the twelfth adiabatic tapered waveguide has an initial end waveguide width and a terminal end width of w, respectively 12 =1.06 μm and w 13 Length l=1.00 μm 12 ＝14000nm。
Compared with the prior art, the double-layer heat insulation mode converter has the following technical effects:
(1) The double-layer adiabatic mode converter of the invention can realize TM 0 Mode and TE 1 Transition between modes is transmitted.
(2) The design of the invention is far better than the traditional linear connection scheme in terms of efficiency. When 99% transmission efficiency is to be achieved, the scheme of the invention only needs 75 μm in length, while the traditional linear connection design needs 1267 μm in length, which is 17 times of the length needed by the scheme of the invention, the device size of the double-layer adiabatic mode converter is greatly reduced, and the miniaturized design in the photonic integrated chip can be achieved.
Drawings
FIG. 1 is a cross-section of the input end of a double-layer adiabatic mode converter of the present invention;
FIG. 2 is a schematic diagram of a linear connection structure of a dual-layer adiabatic mode converter according to the present invention;
FIG. 3 is a schematic diagram of the connection of a first silicon die of a dual-layer adiabatic mode converter according to the present invention;
FIG. 4 is a graph comparing the mode conversion efficiency curves of the present invention and a conventional straight line connection design;
wherein, the reference numerals are as follows: 1. a first silicon core; 2. a second silicon core; 3. a cladding layer; 4. an input end; 5. a first thermally insulated tapered waveguide; 6. a second adiabatic tapered waveguide; 7. a third adiabatic tapered waveguide; 8. a fourth adiabatic tapered waveguide; 9. a fifth adiabatic tapered waveguide; 10. a sixth adiabatic tapered waveguide; 11. a seventh adiabatic tapered waveguide; 12. an eighth adiabatic tapered waveguide; 13. a ninth adiabatic tapered waveguide; 14. a tenth adiabatic taper waveguide; 15. an eleventh adiabatic taper waveguide; 16. a twelfth adiabatic tapered waveguide; 17. and an output terminal.
Detailed Description
The invention is further explained in the following detailed description with reference to the drawings so that those skilled in the art can more fully understand the invention and can practice it, but the invention is explained below by way of example only and not by way of limitation.
As shown in fig. 1-3, a double-layer adiabatic mode converter includes a first silicon core 1, a second silicon core 2, and a cladding 3; cladding layers 3 are arranged around the first silicon core 1 and the second silicon core 2; the first silicon core 1 is arranged below the second silicon core 2; along the propagation direction of the light beam, the first silicon core 1 includes an input end 4, a first adiabatic taper waveguide 5, a second adiabatic taper waveguide 6, a third adiabatic taper waveguide 7, a fourth adiabatic taper waveguide 8, a fifth adiabatic taper waveguide 9, a sixth adiabatic taper waveguide 10, a seventh adiabatic taper waveguide 11, an eighth adiabatic taper waveguide 12, a ninth adiabatic taper waveguide 13, a tenth adiabatic taper waveguide 14, an eleventh adiabatic taper waveguide 15, a twelfth adiabatic taper waveguide 16, and an output end 17, which are sequentially connected.
The material of the cladding 3 is SiO 2 Refractive index n SiO2 =1.445, width W 0 Thickness is h 0 The method comprises the steps of carrying out a first treatment on the surface of the The width and the height are respectively set as W 0 =9μm and h 0 ＝1250nm。
The refractive index of the first silicon core 1 and the second silicon core 2 is n Si = 3.455; the thickness of the second silicon core 2 is h 2 =200 nm, width W; the thickness of the first silicon core 1 is h 1 =200 nm, width w=2w side +W, where W side Is the width of the side rib; the width of the second silicon core 2 is constant to w=1μm; the incident beam wavelength was set to 1.55 μm.
Side rib width W of input end 4 of first silicon core 1 side =3μm, width w I ＝2W side +w=7μm; side rib width W of output end 17 side =0, width w O ＝2W side +W＝1μm。
The input end 4 and the output end 17 in the first silicon core 1 are parallel plate waveguides with the widths w respectively I =7μm and w O Length l=1 μm I And L O All were 5000nm.
The initial end waveguide width and the final end width of the first adiabatic taper waveguide 5 are w respectively 1 =7μm sumw 2 Length l=2.2 μm 1 =13976 nm; the initial end waveguide width and the final end width of the second adiabatic taper waveguide 6 are w respectively 2 =2.2 μm and w 3 Length l=1.8 μm 2 = 37882nm; the initial end waveguide width and the final end width of the third adiabatic taper waveguide 7 are w respectively 3 =1.8 μm and w 4 Length l=1.62 μm 3 = 39619nm; the initial end waveguide width and the final end width of the fourth adiabatic taper waveguide 8 are w respectively 4 =1.62 μm and w 5 Length l=1.50 μm 4 = 41595nm; the fifth adiabatic taper waveguide 9 has an initial end waveguide width and a terminal end width of w, respectively 5 =1.50 μm and w 6 Length l=1.42 μm 5 = 40360nm; the sixth adiabatic taper waveguide 10 has an initial end waveguide width and a terminal end width w, respectively 6 =1.42 μm and w 7 Length l=1.36 μm 6 = 38096nm; the seventh adiabatic taper waveguide 11 has an initial end waveguide width and a final end width of w 7 =1.36 μm and w 8 Length l=1.30 μm 7 = 36932nm; the eighth adiabatic taper waveguide 12 has an initial end waveguide width and a terminal end width of w, respectively 8 =1.30 μm and w 9 Length l=1.24 μm 8 = 33711nm; the ninth adiabatic taper waveguide 13 has an initial end waveguide width and a terminal end width of w, respectively 9 =1.24 μm and w 10 Length l=1.18 μm 9 =28920nm; the tenth adiabatic taper waveguide 14 has an initial end waveguide width and a terminal end width w, respectively 10 =1.18 μm and w 11 Length l=1.12 μm 10 =23456 nm; the eleventh adiabatic taper waveguide 15 has an initial end waveguide width and a terminal end width of w, respectively 11 =1.12 μm and w 12 Length l=1.06 μm 11 = 18276nm; the twelfth adiabatic tapered waveguide 16 has an initial end waveguide width and a terminal end width of w, respectively 12 =1.06 μm and w 13 Length l=1.00 μm 12 ＝14000nm。
In the double-layer adiabatic mode converter of the present invention, when TM 0 When the mode is input from the input end, the mode can be converted into TE at the output end 1 A mode.
The conversion efficiency of the double-layer adiabatic mode converter proposed by the present invention is shown in fig. 4. As can be seen from fig. 4, the inventive scheme requires only a length of 75 μm when a transmission efficiency of 99% is to be achieved, whereas the conventional linear connection scheme requires a length of 1267 μm, which is 17 times the length required by the inventive scheme. Therefore, the double-layer adiabatic mode converter provided by the invention realizes the design of an ultra-compact device, can be used for cascading different functional units in a photon integrated chip, and realizes the design target of higher integration level in the photon integrated chip.
While the foregoing is directed to embodiments of the present invention, other and further details of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.
Claims (6)
1. The double-layer heat insulation mode converter is characterized by comprising a first silicon core (1), a second silicon core (2) and a cladding (3); cladding layers (3) are arranged around the first silicon core (1) and the second silicon core (2); the first silicon core (1) is arranged below the second silicon core (2); along the light beam propagation direction, the first silicon core (1) comprises an input end (4), a first adiabatic taper waveguide (5), a second adiabatic taper waveguide (6), a third adiabatic taper waveguide (7), a fourth adiabatic taper waveguide (8), a fifth adiabatic taper waveguide (9), a sixth adiabatic taper waveguide (10), a seventh adiabatic taper waveguide (11), an eighth adiabatic taper waveguide (12), a ninth adiabatic taper waveguide (13), a tenth adiabatic taper waveguide (14), an eleventh adiabatic taper waveguide (15), a twelfth adiabatic taper waveguide (16) and an output end (17) which are sequentially connected.
2. A double-layer adiabatic mode converter as claimed in claim 1, characterized in that the material of the cladding (3) is SiO 2 Refractive index n SiO2 =1.445, width W 0 Thickness is h 0 The method comprises the steps of carrying out a first treatment on the surface of the Width and height respectivelySet to W 0 =9μm and h 0 ＝1250nm。
3. A double-layer adiabatic mode converter as claimed in claim 1, characterized in that the refractive indices of the first silicon core (1) and the second silicon core (2) are n Si = 3.455; the thickness of the second silicon core (2) is h 2 =200 nm, width W; the thickness of the first silicon core (1) is h 1 =200 nm, width w=2w side +W, where W side Is the width of the side rib; the width of the second silicon core (2) is constant to w=1μm; the incident beam wavelength was set to 1.55 μm.
4. A double-layer adiabatic mode converter as claimed in claim 3, characterized in that the side rib width W of the input end (4) of the first silicon core (1) side =3μm, width w I ＝2W side +w=7μm; side rib width W of output end (17) side =0, width w O ＝2W side +W＝1μm。
5. A double-layer adiabatic mode converter as claimed in claim 4, characterized in that the input (4) and output (17) ends of the first silicon core (1) are parallel plate waveguides, each having a width w I =7μm and w O Length l=1 μm I And L O All were 5000nm.
6. A double-layer adiabatic mode converter as claimed in claim 5, characterized in that the initial end waveguide width and the terminal end width of the first adiabatic tapered waveguide (5) are w, respectively 1 =7μm and w 2 Length l=2.2 μm 1 =13976 nm; the initial end waveguide width and the final end width of the second adiabatic taper waveguide (6) are respectively w 2 =2.2 μm and w 3 Length l=1.8 μm 2 = 37882nm; the initial end waveguide width and the final end width of the third adiabatic taper waveguide (7) are respectively w 3 =1.8 μm and w 4 Length l=1.62 μm 3 = 39619nm; initial end waveguide width and end of fourth adiabatic taper waveguide (8)The end widths are w respectively 4 =1.62 μm and w 5 Length l=1.50 μm 4 = 41595nm; the initial end waveguide width and the final end width of the fifth adiabatic taper waveguide (9) are respectively w 5 =1.50 μm and w 6 Length l=1.42 μm 5 = 40360nm; the initial end waveguide width and the final end width of the sixth adiabatic taper waveguide (10) are w respectively 6 =1.42 μm and w 7 Length l=1.36 μm 6 = 38096nm; the initial end waveguide width and the final end width of the seventh adiabatic taper waveguide (11) are w respectively 7 =1.36 μm and w 8 Length l=1.30 μm 7 = 36932nm; the eighth adiabatic tapered waveguide (12) has an initial end waveguide width and a terminal end width of w, respectively 8 =1.30 μm and w 9 Length l=1.24 μm 8 = 33711nm; the initial end waveguide width and the final end width of the ninth adiabatic taper waveguide (13) are w respectively 9 =1.24 μm and w 10 Length l=1.18 μm 9 =28920nm; the tenth adiabatic tapered waveguide (14) has an initial end waveguide width and a terminal end width of w, respectively 10 =1.18 μm and w 11 Length l=1.12 μm 10 =23456 nm; the eleventh adiabatic tapered waveguide (15) has an initial end waveguide width and a terminal end width of w, respectively 11 =1.12 μm and w 12 Length l=1.06 μm 11 = 18276nm; the twelfth adiabatic tapered waveguide (16) has an initial end waveguide width and a terminal end width of w, respectively 12 =1.06 μm and w 13 Length l=1.00 μm 12 ＝14000nm。
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105204113A (en) * | 2015-10-29 | 2015-12-30 | 中国科学院半导体研究所 | Silicon-based tunable polarization rotator |
| US20170160481A1 (en) * | 2015-12-04 | 2017-06-08 | Tyco Electronics Corporation | Mode size converter and optical device having the same |
| CN115079345A (en) * | 2022-06-22 | 2022-09-20 | 西南交通大学 | Double-conical asymmetric directional coupler-based light polarization beam splitting rotator |
| CN115951451A (en) * | 2022-10-31 | 2023-04-11 | 南通大学 | Is suitable for TM 1 And TE 2 Adiabatic mode converter for mode conversion |
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- 2024-01-29 CN CN202410120552.XA patent/CN117826323A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105204113A (en) * | 2015-10-29 | 2015-12-30 | 中国科学院半导体研究所 | Silicon-based tunable polarization rotator |
| US20170160481A1 (en) * | 2015-12-04 | 2017-06-08 | Tyco Electronics Corporation | Mode size converter and optical device having the same |
| CN115079345A (en) * | 2022-06-22 | 2022-09-20 | 西南交通大学 | Double-conical asymmetric directional coupler-based light polarization beam splitting rotator |
| CN115951451A (en) * | 2022-10-31 | 2023-04-11 | 南通大学 | Is suitable for TM 1 And TE 2 Adiabatic mode converter for mode conversion |
Non-Patent Citations (1)
| Title |
|---|
| 李晨蕾 等: "硅基纳米光子集成回路中的模式转换与耦合", 激光与光电子学进展, vol. 54, no. 05, 31 May 2017 (2017-05-31), pages 50003 - 1 * |
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