CN117265507A - Heater module, thin film deposition apparatus and thin film deposition method - Google Patents
Heater module, thin film deposition apparatus and thin film deposition method Download PDFInfo
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- CN117265507A CN117265507A CN202311200071.1A CN202311200071A CN117265507A CN 117265507 A CN117265507 A CN 117265507A CN 202311200071 A CN202311200071 A CN 202311200071A CN 117265507 A CN117265507 A CN 117265507A
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- film deposition
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- heater module
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- 238000000427 thin-film deposition Methods 0.000 title claims abstract description 34
- 238000007736 thin film deposition technique Methods 0.000 title claims abstract description 18
- 238000006243 chemical reaction Methods 0.000 claims abstract description 29
- 239000010409 thin film Substances 0.000 claims abstract description 12
- 239000007789 gas Substances 0.000 claims description 81
- 239000010408 film Substances 0.000 claims description 39
- 239000012495 reaction gas Substances 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 22
- 239000002243 precursor Substances 0.000 claims description 20
- 238000010438 heat treatment Methods 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 14
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 9
- 239000012159 carrier gas Substances 0.000 claims description 7
- 239000000376 reactant Substances 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- 239000010453 quartz Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052717 sulfur Inorganic materials 0.000 claims description 4
- 239000011593 sulfur Substances 0.000 claims description 4
- XCQGJLOXOOACNB-UHFFFAOYSA-N 3-methylsulfanyl-4-oxo-6,7-dihydro-5h-2-benzothiophene-1-carbonitrile Chemical compound C1CCC(=O)C2=C(SC)SC(C#N)=C21 XCQGJLOXOOACNB-UHFFFAOYSA-N 0.000 claims description 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- LNMGXZOOXVAITI-UHFFFAOYSA-N bis(selanylidene)hafnium Chemical compound [Se]=[Hf]=[Se] LNMGXZOOXVAITI-UHFFFAOYSA-N 0.000 claims description 3
- CXRFFSKFQFGBOT-UHFFFAOYSA-N bis(selanylidene)niobium Chemical compound [Se]=[Nb]=[Se] CXRFFSKFQFGBOT-UHFFFAOYSA-N 0.000 claims description 3
- HITXEXPSQXNMAN-UHFFFAOYSA-N bis(tellanylidene)molybdenum Chemical compound [Te]=[Mo]=[Te] HITXEXPSQXNMAN-UHFFFAOYSA-N 0.000 claims description 3
- ZNDWMUJQNKFBMN-UHFFFAOYSA-N bis(tellanylidene)rhenium Chemical compound [Te]=[Re]=[Te] ZNDWMUJQNKFBMN-UHFFFAOYSA-N 0.000 claims description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 3
- MHWZQNGIEIYAQJ-UHFFFAOYSA-N molybdenum diselenide Chemical compound [Se]=[Mo]=[Se] MHWZQNGIEIYAQJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910000476 molybdenum oxide Inorganic materials 0.000 claims description 3
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims description 3
- 229910003449 rhenium oxide Inorganic materials 0.000 claims description 3
- USBWXQYIYZPMMN-UHFFFAOYSA-N rhenium;heptasulfide Chemical compound [S-2].[S-2].[S-2].[S-2].[S-2].[S-2].[S-2].[Re].[Re] USBWXQYIYZPMMN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052711 selenium Inorganic materials 0.000 claims description 3
- 239000011669 selenium Substances 0.000 claims description 3
- NYPFJVOIAWPAAV-UHFFFAOYSA-N sulfanylideneniobium Chemical compound [Nb]=S NYPFJVOIAWPAAV-UHFFFAOYSA-N 0.000 claims description 3
- 229910052714 tellurium Inorganic materials 0.000 claims description 3
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 3
- 150000003623 transition metal compounds Chemical group 0.000 claims description 3
- ITRNXVSDJBHYNJ-UHFFFAOYSA-N tungsten disulfide Chemical compound S=[W]=S ITRNXVSDJBHYNJ-UHFFFAOYSA-N 0.000 claims description 3
- SDDGNMXIOGQCCH-UHFFFAOYSA-N 3-fluoro-n,n-dimethylaniline Chemical compound CN(C)C1=CC=CC(F)=C1 SDDGNMXIOGQCCH-UHFFFAOYSA-N 0.000 claims description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical group [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- QYGMYMCIOLTWMT-UHFFFAOYSA-N [Re]=[Se] Chemical compound [Re]=[Se] QYGMYMCIOLTWMT-UHFFFAOYSA-N 0.000 claims description 2
- HPQRSQFZILKRDH-UHFFFAOYSA-M chloro(trimethyl)plumbane Chemical compound C[Pb](C)(C)Cl HPQRSQFZILKRDH-UHFFFAOYSA-M 0.000 claims description 2
- 229910052735 hafnium Inorganic materials 0.000 claims description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 2
- NRJVMVHUISHHQB-UHFFFAOYSA-N hafnium(4+);disulfide Chemical compound [S-2].[S-2].[Hf+4] NRJVMVHUISHHQB-UHFFFAOYSA-N 0.000 claims description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 229910000484 niobium oxide Inorganic materials 0.000 claims description 2
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 2
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical group [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 claims description 2
- DYIZHKNUQPHNJY-UHFFFAOYSA-N oxorhenium Chemical compound [Re]=O DYIZHKNUQPHNJY-UHFFFAOYSA-N 0.000 claims description 2
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910001930 tungsten oxide Inorganic materials 0.000 claims description 2
- 238000004378 air conditioning Methods 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 3
- 230000008021 deposition Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000001237 Raman spectrum Methods 0.000 description 3
- 150000004770 chalcogenides Chemical class 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052982 molybdenum disulfide Inorganic materials 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45512—Premixing before introduction in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/4557—Heated nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
Abstract
The application relates to a heater module, a thin film deposition apparatus and a thin film deposition method. The invention relates to a heater module, a thin film deposition device and a thin film deposition method using the heater module. The heater module is applied to a thin film deposition apparatus. The heater module includes a gas mixing chamber, a reaction chamber, and a heater. The gas mixing chamber comprises at least one gas dispersing plate and a baffle plate, and the baffle plate is arranged above the gas dispersing plate. The reaction chamber is disposed downstream of the gas mixing chamber and is in communication with the gas mixing chamber. The heater is adjacently arranged in the gas mixing chamber. The heater module, the thin film deposition device and the thin film deposition method using the heater module can achieve the effect of preparing high-quality thin films.
Description
The present application is a divisional application, and the application date of the original application is 2016, 11, 201610995091.6, and the title of the invention is "heater module, thin film deposition apparatus, and method".
Technical Field
The present invention relates to a heater module, and more particularly, to a thin film deposition apparatus and method for preparing a high quality thin film using the heater module.
Background
Chemical vapor deposition (Chemical Vapor Deposition, CVD) apparatuses can be classified into hot-wall (hot-wall) deposition apparatuses and cold-wall (cold-wall) deposition apparatuses. The cold wall type deposition device can regulate the layer number of the film growth through the change of the deposition time, has the advantages of good film thickness uniformity and the like, and is more suitable for preparing the nano-sized two-dimensional layered material compared with a hot wall type deposition device. However, the conventional cold-wall type deposition apparatus heats only the substrate, so that the reaction gases of different lines need to reach the surface of the substrate to have enough heat sources for chemical reaction. Because the chemical reaction before film growth is an important factor affecting film quality, the reaction gases of different pipelines need to be maintained in a high temperature state before film growth so as to perform sufficient chemical reaction, thereby improving the quality of the deposited film.
Therefore, how to provide a heater module to improve the quality of the deposited film is one of the important issues.
Disclosure of Invention
Accordingly, the present invention is directed to a heater module, a thin film deposition apparatus and a thin film deposition method for improving the quality of deposited thin films.
In order to achieve the above object, the present invention provides a heater module for use in a thin film deposition apparatus. The heater module includes a gas mixing chamber, a reaction chamber, and a heater. The gas mixing chamber comprises at least one gas dispersing plate and a baffle plate, and the baffle plate is arranged above the gas dispersing plate. The reaction chamber is arranged at the downstream of the gas mixing chamber and is communicated with the gas mixing chamber. The heater is adjacently arranged in the gas mixing chamber.
In one embodiment, the gas mixing chamber further comprises a plurality of inlet channels.
In one embodiment, the gas dispersion plate has a plurality of through holes.
In one embodiment, the heater is selected from one of a bulb, a tube, a heating coil, or a combination thereof.
In one embodiment, the baffle is a quartz plate.
In order to achieve the above object, the present invention provides a thin film deposition apparatus comprising a process chamber and at least one gas supply line. The process chamber includes a susceptor and the aforementioned heater module. At least one gas supply line is connected to the heater module.
In one embodiment, the thin film deposition apparatus is a cold wall chemical vapor deposition apparatus.
In order to achieve the above object, the present invention provides a thin film deposition method comprising the steps of: heating the substrate to a reaction temperature; providing a first reaction gas and a second reaction gas; isolating the first reactive gas and the second reactive gas; maintaining the first and second reactant gases at a pre-heat temperature; mixing the first reaction gas and the second reaction gas at a preheating temperature to perform a film forming reaction; and depositing a thin film on the substrate.
In one embodiment, the step of providing the first and second reactant gases further comprises: heating the first precursor to a first temperature to generate a first reaction gas; and heating the second precursor to a second temperature to generate a second reaction gas.
In one embodiment, the preheat temperature is 500-800 ℃.
In one embodiment, the first precursor is selected from transition metal compounds.
In one embodiment, the second precursor is selected from one of the chalcogenides sulfur, selenium, tellurium, and the like.
In the invention, the heater module is additionally arranged in the thin film deposition device, so that the first reaction gas and the second reaction gas are preheated before being mixed, and the first reaction gas and the second reaction gas can be mixed and reacted at a high temperature, so that the chemical reaction before the growth of the thin film is more complete, and the defect that only the substrate is heated in the conventional well-known technology is overcome, and the heater module, the thin film deposition device and the thin film deposition method can achieve the effect of preparing the high-quality thin film.
Drawings
In order to more clearly illustrate the embodiments of the invention or the technical solutions of the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the invention, and other drawings can be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic view of a thin film deposition apparatus according to an embodiment of the present invention;
FIG. 2A is a side view of a heater module in one embodiment of the invention;
FIGS. 2B-2F are top views of the components of FIG. 2A;
FIG. 3 shows a growing MoS in an embodiment of the invention 2 A temperature and time relation diagram of the film;
FIG. 4 is a MoS of one embodiment of the present invention 2 Raman spectrum of the film;
FIG. 5A is a diagram of a MoS in accordance with one embodiment of the present invention 2 Schematic diagrams of different measurement positions on the film;
FIG. 5B is a graph of the fluorescence (PL) spectrum of each measurement location in FIG. 5A;
FIG. 6 is a flow chart of a thin film deposition method according to an embodiment of the invention.
Detailed Description
The heater module, thin film deposition apparatus and method according to embodiments of the present invention will be described with reference to the accompanying drawings, wherein like reference numerals are used to describe like elements, and wherein the accompanying drawings are for illustrative purposes only and are not meant to limit the invention.
The term "coupled" as used herein includes both direct coupling of elements to elements and indirect coupling of elements, e.g., between elements and possibly further comprising media or other elements. Wherein some well-known components may be omitted so as not to obscure the concepts of the present invention.
FIG. 1 is a schematic view of a thin film deposition apparatus according to an embodiment of the present invention. Referring to FIG. 1, the present invention provides a thin film deposition apparatus 100, which includes a process chamber 3, a first gas supply line 10b and a second gas supply line 10a. The process chamber 3 includes a susceptor 4 and a heater module 11. The susceptor 4 may be lifted and lowered to adjust the distance between the substrate 5 and the heater module 11 according to the process, and the first gas supply line 10b and the second gas supply line 10a are respectively connected to the heater module 11, wherein the thin film deposition apparatus 100 may be a cold-wall type chemical vapor deposition apparatus. In addition, a first heating source 7 is disposed around the first gas supply line 10b and the second gas supply line 10a to heat the first precursor 1 and the second precursor 2. The susceptor 4 may carry a substrate 5 and is provided with a second heating source 6 to heat the substrate 5.
Fig. 2A is a side view of a heater module in one embodiment of the invention. Referring to FIG. 2A, the present invention provides a heater module 11 that can be installed in the thin film deposition apparatus 100 of FIG. 1. The heater module 11 includes a gas mixing chamber 113, a reaction chamber 111, and a heater 115. The gas mixing chamber 113 includes at least one gas dispersion plate 112 and a baffle 114. Fig. 2B-2F are top views of the components of fig. 2A. Referring to fig. 2A to 2F, the gas mixing chamber 113 may include a plurality of gas inlet channels 1131, 1132, 1133, 1134 for different channels to allow gas to enter, and the gas dispersing plate 112 has a plurality of through holes 1121 for uniformly dispersing the gas entering the reaction chamber. The 4 intake channels (1131, 1132, 1133, 1134) shown in fig. 2D are only schematic, and the number of intake channels is not limited by the present invention.
As described above, the reaction chamber 111 in the present embodiment is constituted by a quartz tube, and is disposed downstream of the gas mixing chamber 113. The upper end of the reaction chamber 111 is connected to the gas mixing chamber 113, and the lower end of the reaction chamber 111 is directly installed on the process chamber 3 in the thin film deposition apparatus 100, so that the substrate 5 is isolated from the reaction chamber 111. Further, a heater 115 is provided adjacent to the gas mixing chamber 113 so as to maintain the gas mixing chamber 113 in a high temperature state. In the present embodiment, the heater 115 is disposed above the gas mixing chamber 113 by way of example only, and the heater 115 may be disposed on both sides of the gas mixing chamber 113 or anywhere around the gas mixing chamber 113. The baffle 114 is disposed above the gas dispersing plate 112 to isolate the heater 115 from the reaction gas in the gas mixing chamber 113, so as to prevent the reaction gas from being adsorbed on the surface of the heater 115. In this embodiment, the quartz plate is used as the baffle 114, so that the heat transfer of the heater 115 is not affected, and the pollution of the heater 115 by the reaction gas can be avoided.
In the above embodiment, 6 bulbs are used as the heat source of the heater 115, and the heater 115 may be selected from a lamp or a heating coil, or any combination of the bulbs, the lamp and the heating coil. The operating temperature of the heater 115 is in the range of 50 to 800 ℃, preferably 500 to 800 ℃, and the operating temperature is selected according to the type of thin film desired to be grown.
FIG. 3 shows a growing MoS in an embodiment of the invention 2 Temperature versus time for the film. FIG. 6 is a flow chart of a thin film deposition method according to an embodiment of the invention. Referring to fig. 1, 2A, 3 and 6, the following will be described with respect to growing molybdenum disulfide (MoS 2 ) The thin film is exemplified by the thin film deposition method provided by the invention. First, in step S10, the substrate 5 in the thin film deposition apparatus 100 is heated to a reaction temperature of about 850 to 950 ℃ and the process chamber 3 is maintained at a pressure of about 10 to 30 Torr. In step S11, the first precursor 1 is heated to a temperature of about 65-75deg.C to evaporate the first precursor 1 to form a first reaction gas 1a, and the second precursor 2 is heated to a temperature of about 190 ℃ to evaporate the second precursor 2 to form a second reaction gas 2a, in this embodiment, the first precursor 1 is molybdenum hexacarbonyl (Mo (CO) 6 ) The second precursor 2 is Sulfur powder (Sulfur).
In step S12, the first reactive gas 1a and the second reactive gas 2a are respectively carried into the heater module 11 by the first carrier gas 8 and the second carrier gas 9, and the first reactive gas 1a and the second reactive gas 2a can be isolated from each other by controlling the valves, in this embodiment, the first carrier gas 8 and the second carrier gas 9 are all argon (Ar). In step S13, the heater 115 is used as a heat source to keep the first and second reaction gases 1a and 2a at a preheating temperature of about 500-800 ℃ for about 10 minutes, and in this embodiment, the preferred preheating temperature may be 650 ℃, 700 ℃ or 750 ℃. In step S14, the first reaction gas 1a is brought to the position of the second reaction gas 2a by argon gas, and the first reaction gas is mixed at a temperature of about 500-800 DEG C1a and a second reaction gas 2a for performing a subsequent film formation reaction. In step S15, moS is deposited 2 The film is on the substrate 5.
As mentioned above, the thin film deposition apparatus and method provided by the present invention can also be used to prepare other kinds of two-dimensional layered chalcogenides. For example: molybdenum sulfide (MoS) 2 ) Molybdenum selenide (MoSe) 2 ) Molybdenum telluride (MoTe) 2 ) Hafnium sulfide (HfS) 2 ) Hafnium selenide (HfSe) 2 ) Hafnium telluride (HfTe) 2 ) Tungsten sulfide (WS) 2 ) Tungsten selenide (WSe) 2 ) Tungsten telluride (WTE) 2 ) Niobium sulfide (NbS) 2 ) Niobium selenide (NbSe) 2 ) Niobium telluride (NbTe) 2 ) Rhenium sulfide (ReS) 2 ) Rhenium selenide (ReSe) 2 ) Rhenium telluride (ReTe) 2 ) Etc. Wherein the first precursor may be selected from transition metal compounds, such as molybdenum oxide (MoO) 3 ) Tungsten oxide (WO) 3 ) Niobium oxide (Nb) 2 O 5 ) Rhenium oxide (ReO) 3 ) Hafnium oxide (HfO) 2 ) The transition metal oxide and the second precursor may be selected from one or a combination of chalcogenides, such as sulfur, selenium, tellurium …, and the like.
FIG. 4 is a MoS of one embodiment of the present invention 2 Raman spectrum of the film. Referring to FIG. 4, two characteristic peaks 383.5cm-1 and 405.6cm-1 are shown in the Raman spectrum, so that it can be determined that the prepared film is MoS with a multi-layer structure 2 A film.
FIG. 5A is a diagram of a MoS in accordance with one embodiment of the present invention 2 Schematic of different measurement locations on the film. FIG. 5B is a graph of the fluorescence (PL) spectrum of each measurement location in FIG. 5A. Referring to FIGS. 5A-5B, in this embodiment, moS is shown 2 Thin films are grown on sapphire (sapphire) substrates and grown on MoS 2 9 spots on the film were subjected to fluorescence (PL) analysis. As shown in FIG. 5B, moS 2 The PL intensity of the film is far greater than that of the substrate at each measuring position, so that the addition of the heater module in the film deposition device is beneficial to preparing high-quality MoS 2 A film.
In summary, the heater module is added in the thin film deposition apparatus to preheat the first and second reaction gases before mixing, and ensure that the first and second reaction gases can be mixed at high temperature, so that the chemical reaction before growing the thin film is more complete, and the defect that only the substrate is heated in the conventional known technology is overcome, so that the heater module, the thin film deposition apparatus and the method of the invention can achieve the effect of preparing a high-quality thin film.
The above-described embodiments are not intended to limit the present invention, and any equivalent modifications and variations to the present invention without departing from the spirit and scope of the present invention will be included in the claims by any person skilled in the art.
Claims (13)
1. A heater module for use in a thin film deposition apparatus, the heater module comprising:
the gas mixing chamber comprises at least one gas dispersing plate, a baffle plate and a plurality of gas inlet channels, wherein the baffle plate is arranged above the gas dispersing plate, and the gas dispersing plate is provided with a plurality of through holes;
the reaction chamber is arranged at the downstream of the gas mixing chamber and is communicated with the gas mixing chamber; and
a heater disposed adjacent to the gas mixing chamber, the heater having a first heating source and a second heating source;
wherein the baffle plate isolates the heater from the reaction gas in the gas mixing chamber, preventing the reaction gas in the gas mixing chamber from being adsorbed on the heater.
2. The heater module of claim 1, wherein the heater comprises at least one of or any combination of: bulb, lamp tube, heating coil.
3. The heater module of claim 1 wherein the baffle is a quartz plate.
4. A thin film deposition apparatus comprising:
a process chamber, comprising:
a heater module as claimed in any one of claims 1 to 3; a kind of electronic device with high-pressure air-conditioning system
A base for carrying a substrate and being capable of lifting and lowering according to the process requirement to adjust the distance between the substrate and the heater module; and
a first gas supply line and a second gas supply line connected to the gas inlet passage of the heater module;
the first reaction gas and the second reaction gas enter the gas mixing chamber through the first gas supply pipeline and the second gas supply pipeline respectively, the first heating source is arranged around the first gas supply pipeline and the second gas supply pipeline, and the second heating source heats the substrate.
5. The thin film deposition apparatus of claim 4, wherein the thin film deposition apparatus is a cold wall type (cold-wall) chemical vapor deposition apparatus.
6. A thin film deposition method, suitable for use in a thin film deposition apparatus, comprising the steps of:
heating the substrate to a reaction temperature;
providing a first reactant gas and a second reactant gas, comprising:
heating a first precursor to a first temperature by a heater module of the thin film deposition apparatus to generate the first reactant gas before entering the heater module of the thin film deposition apparatus, the heater module comprising a gas mixing chamber and a heater; a kind of electronic device with high-pressure air-conditioning system
Heating a second precursor to a second temperature by the heater module of the thin film deposition apparatus to generate the second reactant gas prior to entering the heater module of the thin film deposition apparatus;
the first reaction gas and the second reaction gas enter a gas mixing chamber of the heater module, and the heater of the heater module, the first reaction gas and the second reaction gas are isolated through a baffle plate of the gas mixing chamber, so that the first reaction gas and the second reaction gas in the gas mixing chamber are prevented from being adsorbed on the heater;
maintaining the first and second reactant gases at a preheat temperature for a period of time by the heater of the heater module, the preheat temperature being greater than the first and second temperatures and less than the reaction temperature;
mixing the first reaction gas and the second reaction gas at the preheating temperature;
uniformly dispersing the mixed gas through at least one gas dispersing plate; and
and depositing a thin film on the substrate at the reaction temperature.
7. The thin film deposition method according to claim 6, wherein the step of heating the substrate to the reaction temperature is to heat the substrate to the reaction temperature of 850 to 950 ℃ and maintain the substrate at a pressure of 10 to 30 Torr.
8. The thin film deposition method according to claim 6, wherein the first temperature is 65 to 75 ℃, the second temperature is 190 ℃, and the preheating temperature is 500 to 800 ℃.
9. The thin film deposition method of claim 6, wherein the step of introducing the first and second reactive gases into a gas mixing chamber of a heater module brings the first and second reactive gases into the gas mixing chamber of the heater module by first and second carrier gases, respectively.
10. The thin film deposition method of claim 9, wherein the first carrier gas and the second carrier gas are argon.
11. The thin film deposition method of claim 6, wherein the first precursor is a transition metal compound that is molybdenum oxide, tungsten oxide, niobium oxide, rhenium oxide, or hafnium oxide; the second precursor comprises one of: sulfur, selenium, tellurium, and the like, or a compound thereof.
12. The thin film deposition method of claim 11, wherein the first precursor is molybdenum hexacarbonyl and the second precursor is sulfur powder.
13. The film deposition method according to claim 6, wherein the step of depositing a film is depositing a molybdenum sulfide film, a molybdenum selenide film, a molybdenum telluride film, a hafnium sulfide film, a hafnium selenide film, a hafnium telluride film, a tungsten sulfide film, a tungsten selenide film, a tungsten telluride film, a niobium sulfide film, a niobium selenide film, a niobium telluride film, a rhenium sulfide film, a rhenium selenide film, or a rhenium telluride film.
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| CN201610995091.6A CN108070848A (en) | 2016-11-11 | 2016-11-11 | Heater module, film deposition apparatus and method |
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| US5332442A (en) * | 1991-11-15 | 1994-07-26 | Tokyo Electron Kabushiki Kaisha | Surface processing apparatus |
| US5928427A (en) * | 1994-12-16 | 1999-07-27 | Hwang; Chul-Ju | Apparatus for low pressure chemical vapor deposition |
| US8491720B2 (en) * | 2009-04-10 | 2013-07-23 | Applied Materials, Inc. | HVPE precursor source hardware |
| JP5395102B2 (en) * | 2011-02-28 | 2014-01-22 | 株式会社豊田中央研究所 | Vapor growth equipment |
| CN104498891B (en) * | 2014-11-23 | 2017-01-25 | 中国人民解放军第五七一九工厂 | Carbon/carbon composite component chemical vapor infiltration device |
| CN206219658U (en) * | 2016-11-11 | 2017-06-06 | 优材科技有限公司 | Heater module and film deposition apparatus |
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