CN206219658U - Heater module and film deposition apparatus - Google Patents
Heater module and film deposition apparatus Download PDFInfo
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- CN206219658U CN206219658U CN201621216829.6U CN201621216829U CN206219658U CN 206219658 U CN206219658 U CN 206219658U CN 201621216829 U CN201621216829 U CN 201621216829U CN 206219658 U CN206219658 U CN 206219658U
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- gas
- deposition apparatus
- heater module
- film deposition
- heater
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Abstract
The utility model is related to a kind of heater module and film deposition apparatus.Heater module is applied to a film deposition apparatus.Heater module includes a gas mixer chamber, a reative cell and a heater.Gas mixer chamber includes at least one gas dispersion plate and a baffle plate, and baffle plate setting is in gas dispersion plate top.Reative cell is arranged at gas mixer chamber downstream (downstream), and is connected with gas mixer chamber.Heater is adjacent to gas mixer chamber.Heater module of the present utility model and film deposition apparatus may achieve the effect for preparing high-quality thin film.
Description
Technical field
The utility model is, on a kind of heater module, high-quality to be prepared using heater module especially with regard to one kind
The film deposition apparatus of film.
Background technology
Chemical vapor deposition (Chemical Vapor Deposition, CVD) device can be divided into hot wall type (hot-wall)
Precipitation equipment and cold wall type (cold-wall) precipitation equipment.Because cold wall type precipitation equipment can be by the change of sedimentation time
Regulate and control the number of plies of film growth, and have the advantages that film thickness uniformity is good, thus compared to hot wall type precipitation equipment be more suitable for for
Prepare the two-dimensional layer material of nm yardstick.However, traditional cold wall type precipitation equipment is only heated to substrate, therefore different pipes
The reacting gas on road need to reach substrate surface just has enough thermals source to be chemically reacted.Due to the chemical reaction before film growth
It is the key factor for influenceing film quality, thus in before film growth, the reacting gas of different pipelines need to be maintained at the condition of high temperature,
Sufficiently to be chemically reacted, and then lift the quality of deposition film.
Therefore, how a kind of heater module is provided, to lift the quality of deposition film, actually current important problem it
One.
Utility model content
In view of this, the purpose of this utility model is heavy to be lifted to provide a kind of heater module and film deposition apparatus
The quality of product film.
It is that, up to above-mentioned purpose, the utility model provides a kind of heater module, is applied to a film deposition apparatus.Heater
Module includes a gas mixer chamber, a reative cell and a heater.Gas mixer chamber include at least one gas dispersion plate and
One baffle plate, baffle plate setting is in gas dispersion plate top.Reative cell is arranged at gas mixer chamber downstream, and is connected with gas mixer chamber
It is logical.Heater is adjacent to gas mixer chamber.
In one embodiment, gas mixer chamber further includes a plurality of inlet channels.
In one embodiment, gas dispersion plate has plurality of through holes.
In one embodiment, heater is selected from one of bulb, fluorescent tube, heating coil or its combination.
In one embodiment, baffle plate is quartz plate.
It is that the utility model provides a kind of film deposition apparatus includes a process chamber and at least one up to above-mentioned purpose
Gas supply pipeline.Process chamber includes a pedestal and a foregoing heater module.At least one gas supply pipeline with plus
Hot device module is connected.
In one embodiment, film deposition apparatus are cold wall type chemical vapor deposition unit.
In one embodiment, pedestal can be lifted.
In one embodiment, the first heating source is provided with around gas supply pipeline.
In one embodiment, pedestal is provided with the second heating source.
From the above, the utility model makes the first reacting gas by setting up heater module in film deposition apparatus
And second reacting gas the step of first preheated before combination, and ensure that the first reacting gas and the second reacting gas can be in height
Hybrid reaction is carried out under temperature state, so that the chemical reaction before film growth is more complete, it is only right in conventional well known technology to improve
The shortcoming of substrate heating, therefore heater module of the present utility model and film deposition apparatus may achieve the work(for preparing high-quality thin film
Effect.
Brief description of the drawings
In order to illustrate more clearly of the utility model embodiment or technical scheme of the prior art, below will be to embodiment
Or the accompanying drawing to be used needed for description of the prior art is briefly described, it should be apparent that, drawings in the following description are
Some embodiments of the present utility model, for those of ordinary skill in the art, are not paying the premise of creative labor
Under, other accompanying drawings can also be obtained according to these accompanying drawings.
Fig. 1 is the schematic diagram of film deposition apparatus in the embodiment of the utility model one；
Fig. 2A is the side view of heater module in the embodiment of the utility model one；
Fig. 2 B to Fig. 2 F are the top view of each component in Fig. 2A；
Fig. 3 is the MoS that grows up in the embodiment of the utility model one2The temperature and time graph of a relation of film；
Fig. 4 is MoS in the embodiment of the utility model one2The Raman spectrogram of film；
Fig. 5 A be the embodiment of the utility model one in MoS2The schematic diagram of different adjustment locations on film；
Fig. 5 B are photoexitation fluorescence (PL) spectrogram of each adjustment location in Fig. 5 A；
Fig. 6 is the schematic flow sheet of membrane deposition method in the embodiment of the utility model one.
Specific embodiment
Hereinafter with reference to relevant drawings, the heater module according to the utility model specific embodiment and thin film deposition are illustrated
Device, wherein identical component will be illustrated with identical element numbers, and institute's accompanying drawings are only illustrative purposes, are not intended to office
Limit the utility model.
Word on " connection " used herein, except being directly connected with component including component, also including group
Part is indirectly connected with component, such as may separately include medium or other assemblies between two components.Wherein, the known component in part
May omit to avoid obscuring concept of the present utility model.
Fig. 1 is the schematic diagram of film deposition apparatus in the embodiment of the utility model one.Refer to shown in Fig. 1, this practicality is new
Type provides a kind of film deposition apparatus 100, including a process chamber 3, a first gas supply line 10b and a second gas
Supply line 10a.Process chamber 3 includes a pedestal 4 and a heater module 11.Pedestal 4 can need lifting to adjust with processing procedure
The distance of substrate 5 and heater module 11, first gas supply line 10b and second gas supply line 10a respectively with heating
Device module 11 is connected, and wherein film deposition apparatus 100 can be cold wall type chemical vapor deposition unit.Additionally, first gas
One first heating source 7 is provided with around supply line 10b and second gas supply line 10a, with to the first predecessor 1 and
Two predecessors 2 are heated.Pedestal 4 can carry a substrate 5, and be provided with one second heating source 6, be heated with to substrate 5.
Fig. 2A is the side view of heater module in the embodiment of the utility model one.Refer to shown in Fig. 2A, this practicality is new
Type provides a kind of heater module 11, can be installed in the film deposition apparatus 100 of Fig. 1.Heater module 11 includes a gas
Mixing chamber 113, a reative cell 111 and a heater 115.Gas mixer chamber 113 include at least one gas dispersion plate 112 and
One baffle plate 114.Fig. 2 B to 2F are the top view of each component in Fig. 2A.Refer to shown in Fig. 2A to 2F, gas mixer chamber 113 can be wrapped
A plurality of inlet channels (1131,1132,1133,1134) are included, for the gas inlet of different pipelines, and gas dispersion plate 112
With plurality of through holes 1121, can dispersed entrance reative cell gas.Depicted in Fig. 2 D 4 inlet channels (1131,
1132nd, 1133,1134) it is only schematic diagram, the utility model is not limiting as the quantity of inlet channel.
From the above, the reative cell 111 in the present embodiment is made up of quartz ampoule, and is arranged at gas mixer chamber 113
Downstream.The upper end of reative cell 111 is connected with gas mixer chamber 113, and the lower end of reative cell 111 can directly be set up in film and sink
On process chamber 3 in product device 100, therefore substrate 5 can be isolated from reative cell 111.Additionally, heater 115 is adjacent to gas
Mixing chamber 113, so that gas mixer chamber 113 is held in the condition of high temperature.In the present embodiment, heater 115 is arranged at gas and mixes
Close the top of room 113 by way of example only, heater 115 also may be disposed at the both sides of gas mixer chamber 113 or be arranged at gas mixing
Around room 113 Anywhere.Baffle plate 114 is arranged at the top of gas dispersion plate 112, can isolate heater 115 and gas mixing
Reacting gas in room 113, to prevent reacting gas to be adsorbed in the surface of heater 115.It is to be done using quartz plate in the present embodiment
It is baffle plate 114, therefore does not interfere with the heat transfer of heater 115, reacting gas can be avoided to pollute heater 115 again.
The thermal source with 6 bulbs as heater 115 in above-described embodiment, heater 115 also may be selected from fluorescent tube or
Heating coil, or bulb, fluorescent tube and heating coil any combination.Additionally, the operating temperature range of heater 115 be 50~
800 DEG C, preferably 500~800 DEG C, the selection of operation temperature is according to depending on the film species to be grown up.
Fig. 3 is the MoS that grows up in the embodiment of the utility model one2The temperature and time graph of a relation of film.Fig. 6 is new this practicality
The schematic flow sheet of membrane deposition method in the embodiment of type one.Please refer to shown in Fig. 1, Fig. 2A, Fig. 3 and Fig. 6, below will be with
Growth molybdenum bisuphide (MoS2) as a example by film, illustrate membrane deposition method provided by the utility model.First, in step S10
In, the substrate 5 in film deposition apparatus 100 is heated to about 850~950 DEG C of reaction temperature, and be held in process chamber 3
The pressure of about 10~30Torr.In step S11, one first predecessor 1 is heated to about 65~75 DEG C of temperature, before making first
Drive thing 1 to evaporate and form one first reacting gas 1a, and one second predecessor 2 is heated to about 190 DEG C of temperature, before making second
Drive thing 2 to evaporate and form one second reacting gas 2a, in this embodiment, the first predecessor 1 is hexacarbonylmolybdenum (Mo (CO)6),
Second predecessor 2 is sulphur powder (Sulfur).
In step S12, respectively by the first current-carrying gas 8 and the second current-carrying gas 9 by the first reacting gas 1a and
Two reacting gas 2a are brought into heater module 11, now can make the reactions of the first reacting gas 1a and second by the control of valve
Gas 2a mutually completely cuts off, and in this embodiment, the first current-carrying gas 8 and the second current-carrying gas 9 are argon gas (Ar).In step
In S13, with heater 115 for thermal source makes the first reacting gas 1a and the second reacting gas 2a be held in about 500~800 DEG C pre-
Hot temperature, this process lasts about 10 minutes, and in this embodiment, preferably preheating temperature can be 650 DEG C, 700 DEG C or 750 DEG C.
In step S14, by argon gas by the first reacting gas 1a bands to the second reacting gas 2a positions, and in about 500~800
Mix the first reacting gas 1a and the second reacting gas 2a at a temperature of DEG C, to carry out follow-up film formation reaction.In step S15
In, deposit MoS2Film is in substrate 5.
From the above, film deposition apparatus provided by the utility model are also used to prepare other kinds of two-dimensional layer
Chalcogenide.For example：Molybdenum sulfide (MoS2), selenizing molybdenum (MoSe2), telluride molybdenum (MoTe2), vulcanization hafnium (HfS2), selenizing hafnium
(HfSe2), telluride hafnium (HfTe2), tungsten sulfide (WS2), tungsten selenide (WSe2), telluride tungsten (WTe2), vulcanization niobium (NbS2), selenizing niobium
(NbSe2), telluride niobium (NbTe2), sulfuration rhenium (ReS2), selenizing rhenium (ReSe2), telluride rhenium (ReTe2) etc..Wherein, the first forerunner
Thing may be selected from transistion metal compound, e.g. molybdenum oxide (MoO3), tungsten oxide (WO3), niobium oxide (Nb2O5), rheium oxide
(ReO3), hafnium oxide (HfO2) etc. transition metal oxide, and the second predecessor may be selected from one of chalcogen or its chemical combination
Thing, chalcogen is, for example, sulphur, selenium, tellurium ... etc..
Fig. 4 is MoS in the embodiment of the utility model one2The Raman spectrogram of film.Refer to shown in Fig. 4, Raman spectrum
In show two characteristic peaks of 383.5cm-1 and 405.6cm-1, therefore can determine whether the MoS that prepared film is sandwich construction2It is thin
Film.
Fig. 5 A be the embodiment of the utility model one in MoS2The schematic diagram of different adjustment locations on film.Fig. 5 B are Fig. 5 A
In each adjustment location photoexitation fluorescence (PL) spectrogram.It is by MoS in the present embodiment please refer to shown in Fig. 5 A-5B2It is thin
Film is grown up on sapphire (sapphire) substrate, and in MoS2Film take up an official post take 9 points carry out photoexitation fluorescence (PL) analysis.Such as
Shown in Fig. 5 B, MoS2The PL intensity of film on each adjustment location much larger than the PL intensity of substrate, therefore in film deposition apparatus
In install heater module of the present utility model additional and help to prepare high-quality MoS2Film.
In sum, the utility model makes the first reacting gas by setting up heater module in film deposition apparatus
And second reacting gas the step of first preheated before combination, and ensure that the first reacting gas and the second reacting gas can be in height
Hybrid reaction is carried out under temperature state, so that the chemical reaction before film growth is more complete, it is only right in conventional well known technology to improve
The shortcoming of substrate heating, therefore heater module of the present utility model and film deposition apparatus may achieve the work(for preparing high-quality thin film
Effect.
Above-described embodiment is not limited to the utility model, any to be familiar with this those skilled in the art, without departing from the utility model
Spirit and scope in, and the equivalent modifications that are carried out to it or change are intended to be limited solely by claim.
Claims (10)
1. a kind of heater module, is applied to film deposition apparatus, and the heater module includes：
Gas mixer chamber, including at least one gas dispersion plate and a baffle plate, the baffle plate setting is in gas dispersion plate top；
Reative cell, is arranged at the gas mixer chamber downstream, and be connected with the gas mixer chamber；And
Heater, is disposed adjacent with the gas mixer chamber.
2. heater module according to claim 1, wherein the gas mixer chamber also includes a plurality of inlet channels.
3. heater module according to claim 1, wherein the gas dispersion plate has plurality of through holes.
4. heater module according to claim 1, wherein the heater at least includes one below or its any group
Close：Bulb, fluorescent tube, heating coil.
5. heater module according to claim 1, wherein the baffle plate is quartz plate.
6. a kind of film deposition apparatus, including：
Process chamber, including：
Pedestal；And
Heater module as described in claim 1 to 5 is any；And
At least one gas supply pipeline, is connected with the heater module.
7. film deposition apparatus according to claim 6, the wherein film deposition apparatus are that cold wall type (cold-wall) is changed
Learn vapor phase growing apparatus.
8. film deposition apparatus according to claim 6, wherein pedestal can be lifted.
9. film deposition apparatus according to claim 6, are wherein provided with the first heating around the gas supply pipeline
Source.
10. film deposition apparatus according to claim 6, wherein pedestal is provided with the second heating source.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621216829.6U CN206219658U (en) | 2016-11-11 | 2016-11-11 | Heater module and film deposition apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621216829.6U CN206219658U (en) | 2016-11-11 | 2016-11-11 | Heater module and film deposition apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206219658U true CN206219658U (en) | 2017-06-06 |
Family
ID=58792075
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621216829.6U Active CN206219658U (en) | 2016-11-11 | 2016-11-11 | Heater module and film deposition apparatus |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206219658U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108070848A (en) * | 2016-11-11 | 2018-05-25 | 优材科技有限公司 | Heater module, film deposition apparatus and method |
| CN111816586A (en) * | 2020-05-18 | 2020-10-23 | 中国科学院微电子研究所 | Gas mixing equipment and gas mixing method for semiconductor manufacturing |
-
2016
- 2016-11-11 CN CN201621216829.6U patent/CN206219658U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108070848A (en) * | 2016-11-11 | 2018-05-25 | 优材科技有限公司 | Heater module, film deposition apparatus and method |
| CN111816586A (en) * | 2020-05-18 | 2020-10-23 | 中国科学院微电子研究所 | Gas mixing equipment and gas mixing method for semiconductor manufacturing |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CB03 | Change of inventor or designer information |
Inventor after: Zhuang Zhenyu Inventor after: Zhang Yonghuang Inventor after: Wang Hewei Inventor after: Wei Songyan Inventor after: Zheng Jiajin Inventor before: Zhuang Zhenyu Inventor before: Zhang Yonghuang Inventor before: Li Lianzhong Inventor before: Wang Hewei |
|
| CB03 | Change of inventor or designer information |