CN117219565B - Three-dimensional stacked integrated high-density semiconductor device and manufacturing method thereof - Google Patents
Three-dimensional stacked integrated high-density semiconductor device and manufacturing method thereof Download PDFInfo
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- CN117219565B CN117219565B CN202311472327.4A CN202311472327A CN117219565B CN 117219565 B CN117219565 B CN 117219565B CN 202311472327 A CN202311472327 A CN 202311472327A CN 117219565 B CN117219565 B CN 117219565B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 239000004065 semiconductor Substances 0.000 title claims abstract description 27
- 235000012431 wafers Nutrition 0.000 claims abstract description 34
- 238000000034 method Methods 0.000 claims abstract description 20
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052802 copper Inorganic materials 0.000 claims abstract description 12
- 239000010949 copper Substances 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 238000005498 polishing Methods 0.000 claims abstract description 8
- 230000004888 barrier function Effects 0.000 claims abstract description 7
- 238000007747 plating Methods 0.000 claims abstract description 6
- 238000000708 deep reactive-ion etching Methods 0.000 claims abstract description 4
- 230000005540 biological transmission Effects 0.000 claims description 32
- 238000003780 insertion Methods 0.000 claims description 23
- 230000037431 insertion Effects 0.000 claims description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 6
- 238000007740 vapor deposition Methods 0.000 claims description 6
- 238000001312 dry etching Methods 0.000 claims description 3
- 238000005240 physical vapour deposition Methods 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 238000012545 processing Methods 0.000 abstract description 14
- 230000008569 process Effects 0.000 abstract description 6
- 238000007789 sealing Methods 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 5
- 238000009825 accumulation Methods 0.000 description 4
- 238000001179 sorption measurement Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000008439 repair process Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005429 filling process Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
Abstract
The invention discloses a three-dimensional stacked integrated high-density semiconductor device and a manufacturing method thereof, which relate to the technical field of manufacturing or processing of semiconductor devices and comprise the following steps: s1: preparing a substrate; s2: deep reactive ion etching to form a through hole; s3: sequentially manufacturing an insulating layer, a barrier layer and a seed layer; s4: filling holes and plating copper; s5: thinning and polishing; s6: and (5) bonding the wafers. In the invention, the clamping head is always clamped on the groove at the side edge of the wafer, and the clamping head is transferred to the next procedure when the processing equipment is replaced, so that the contact of the equipment to the wafer is reduced, and the situation that the through hole is damaged due to the fact that the wafer is repeatedly clamped in the process of replacing the processing equipment can be avoided. Meanwhile, for the link that the through hole is easy to damage, a flexible connector is additionally arranged on related equipment, so that impact and stress damage to a wafer are reduced, and the damage probability of the through hole in clamping is further reduced.
Description
Technical Field
The present invention relates to the field of semiconductor device manufacturing or processing technology, and more particularly, to a three-dimensional stacked integrated high-density semiconductor device and a manufacturing method thereof.
Background
Through Silicon Vias (TSVs) are one of the most advanced technologies in the current semiconductor manufacturing industry, and have gradually become the hot spot and direction of future development due to their advantages of better electrical performance, lower power consumption, wider bandwidth, higher density, smaller overall dimensions, lighter weight, etc., so that the Through Silicon Vias (TSVs) are the preferred solution for achieving miniaturization, high density and multifunction of circuits.
In the existing semiconductor processing technology, the wafer fixing modes mainly include the following three modes: firstly, clamping a wafer through a clamping head so as to fix the wafer; secondly, fixing the wafer on a processing device through electrostatic adsorption; third, the wafer is fixed by vacuum adsorption.
For example, in the 201180037310.5 patent, TSV plating is performed by clamping a clamping head, and although the clamping head is more damaged to a wafer than electrostatic adsorption and vacuum adsorption, the firmness of the clamping head is incomparable with other two fixing methods, especially for the method of rotating and plating in an electrolyte solution in the patent. Although this patent provides an electroplating embodiment, the problem of damage and internal stress accumulation to the wafer during actual transfer is not solved, and in particular, when the process is changed and the processing equipment is changed, no matter how slow the clamping speed is, internal stress is always accumulated on the wafer, and serious internal stress accumulation may even cause damage to the through hole.
Although a repair method for repairing a through hole is provided in the patent with the application number of 202210332324.X, repair after damage of one taste only can reduce the rejection rate and cannot improve the yield of finished products, so that how to reduce the internal stress accumulation of a wafer, improve the yield and reduce the damage probability of the through hole is a technical problem to be solved by the invention. Accordingly, there is a need for a three-dimensional stacked integrated high-density semiconductor device and method of fabrication that at least partially addresses the problems of the prior art.
Disclosure of Invention
In the summary, a series of concepts in a simplified form are introduced, which will be further described in detail in the detailed description. The summary of the invention is not intended to define the key features and essential features of the claimed subject matter, nor is it intended to be used as an aid in determining the scope of the claimed subject matter.
To at least partially solve the above problems, the present invention provides a method for manufacturing a three-dimensional stacked integrated high-density semiconductor device, including the steps of:
s1: preparing a substrate;
s2: deep reactive ion etching is carried out through deep hole etching equipment to form a through hole;
s3: sequentially manufacturing an insulating layer, a barrier layer and a seed layer through vapor deposition equipment;
s4: filling holes through copper filling equipment for copper plating;
s5: thinning by a thinning polishing device;
s6: bonding wafers to manufacture finished semiconductors;
the thinning polishing equipment and the copper filling equipment are respectively provided with a flexible connector, and the flexible connectors are connected with clamping heads on the wafer and are used for reducing inherent stress damage of the wafer when equipment is switched.
Preferably, the deep hole etching device in step S2 is a dry etching device or a wet etching device.
Preferably, the vapor deposition apparatus in step S3 is composed of a plasma enhanced chemical vapor deposition apparatus for fabricating an insulating layer, and a physical vapor deposition apparatus for fabricating a barrier layer and a seed layer.
The clamping head is provided with a protruding portion used for being clamped with the flexible connector, an insertion groove used for being inserted with the flexible connector is formed in the protruding portion, and a clamping groove used for being clamped with the flexible connector is formed in the side wall of the insertion groove.
Preferably, the flexible connector is composed of a driving part connected with the driving device, a connecting part spliced with the insertion groove, and a flexible locking part used for connecting the driving part and the connecting part, wherein a clamping strip is arranged on the connecting part and is clamped with the clamping groove.
Preferably, the end of the driving part is provided with at least four driving columns with teeth, the driving columns extend into the flexible locking part and are movably connected with the flexible locking part through the teeth on the driving columns, one end of the connecting part is provided with annular teeth and is positioned in the flexible locking part, the other end of the connecting part penetrates through the flexible locking part and is spliced with the inserting groove of the clamping head, and the clamping strip is positioned outside the flexible locking part.
Preferably, the flexible locking part comprises a positioning shell and at least four bevel gears, a positioning column is arranged in the positioning shell, the end part of the positioning column extends into the end part of the connecting part with annular teeth, the annular teeth of the connecting part are sleeved outside the positioning column, the positioning column is movably connected with the connecting part, a transmission gear is arranged on the bevel gears, one end of the transmission gear is connected with the positioning shell through a shaft, the other end of the transmission gear penetrates through the bevel gears and is connected with the positioning column through a shaft, teeth on the transmission column are meshed with teeth on the transmission gear, and the teeth of the bevel gears are meshed with the annular teeth of the end part of the connecting part.
Preferably, the positioning column is provided with at least four through holes, one end of each through hole is communicated with the driving part, the other end of each through hole is communicated with the inner bottom of the insertion groove, a piston is arranged in each through hole, one end of each piston is movably connected with a limiter arranged at the end part of the positioning shell,
when the driving part is not in contact with the limiter, the other end of the piston is in contact with the inner bottom surface of the insertion groove;
when the driving part is abutted with the limiter, the other end of the piston is far away from the inner bottom surface of the insertion groove through the limiter.
Preferably, the limiter is composed of a U-shaped positioner and an abutting block, the positioner is arranged at the end part of the positioning shell, the abutting block is provided with an eccentric sleeve, the eccentric sleeve is connected with an eccentric sleeve shaft through a movable shaft, the eccentric sleeve is movably connected with the positioner, and the end part of the piston extends into the positioner and is connected with the abutting block shaft through a rotating shaft.
The invention provides a three-dimensional stacked integrated high-density semiconductor device, which is manufactured by the manufacturing method and comprises a substrate arranged in a SiP package on a circuit board, a silicon intermediate layer arranged on the substrate in the SiP package, and a plurality of chip cores arranged on the silicon intermediate layer, mutually stacked and electrically connected.
Compared with the prior art, the invention at least comprises the following beneficial effects:
the invention adopts the mode of connecting the clamping head with the wafer during processing, and is different from the traditional mode that each device is provided with the clamping head to clamp the wafer during processing, in the invention, the clamping head is always clamped on the groove at the side edge of the wafer, and the clamping head is transported to the next working procedure together during replacing the processing device, so that the contact of the device to the wafer is reduced, and therefore, the situation that the wafer is repeatedly clamped during the process of replacing the processing device, the internal stress of the wafer is accumulated, and the through hole is damaged is avoided. Meanwhile, for links which are easy to damage the through holes, such as copper filling technology and thinning polishing technology, a flexible connector is additionally arranged on related equipment so as to realize flexible connection with the clamping head, thereby reducing impact and stress damage to the wafer when the clamping head is connected, and further reducing the damage probability of the through holes in clamping.
Additional advantages, objects, and features of the invention will be set forth in part in the description which follows and in part will become apparent to those having ordinary skill in the art upon examination of the following or may be learned from practice of the invention.
Drawings
The accompanying drawings are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate the invention and together with the embodiments of the invention, serve to explain the invention. In the drawings:
fig. 1 is a flow chart of a method for fabricating a three-dimensional stacked integrated high-density semiconductor device according to the present invention.
Fig. 2 is a schematic cross-sectional view of a clamping head according to the present invention.
Fig. 3 is a schematic cross-sectional view of a first embodiment of the flexible connector (not connected to the clamping head) according to the present invention.
Fig. 4 is a schematic view of a flexible connection of a first embodiment of a flexible connector according to the present invention.
Fig. 5 is a schematic structural view of a flexible locking portion (positioning shell portion is not shown) of the first embodiment of the flexible connector of the present invention.
Fig. 6 is a schematic cross-sectional view of a second embodiment of the flexible joint according to the present invention (in a clamping head connected state).
Fig. 7 is a schematic view of a piston when flexibly connected according to a second embodiment of the flexible joint of the present invention.
Fig. 8 is an exploded view of the stopper and piston of the present invention.
Fig. 9 is a schematic diagram of a three-dimensional stacked integrated high-density semiconductor device according to the present invention after stacking.
In the figure: 100. a circuit board (circuit board), a Substrate (SiP Substrate) in a 200 SiP package, a 300 silicon intermediate layer (Silicon interposer), a 400 chip core (Die), a 1 clamping head, 11 protruding parts, 12 inserting grooves, 13 clamping grooves, 2 driving parts, 21 driving columns, 3 connecting parts, 31 clamping strips, 4 flexible locking parts, 41 positioning shells, 42 bevel gears, 43 positioning columns, 44 driving gears, 5 pistons, 6 limiters, 61 positioners, 62 abutting blocks, 63 eccentric sleeves, 64 movable shafts and 65 rotating shafts.
Detailed Description
The present invention is described in further detail below with reference to the drawings and examples to enable those skilled in the art to practice the invention by referring to the description.
It will be understood that terms, such as "having," "including," and "comprising," as used herein, do not preclude the presence or addition of one or more other elements or groups thereof.
As shown in fig. 1 to 9, the present invention provides a method for manufacturing a three-dimensional stacked integrated high-density semiconductor device, comprising the steps of:
s1: preparing a substrate;
s2: deep reactive ion etching is carried out through deep hole etching equipment to form a through hole; the deep hole etching equipment is dry etching equipment or wet etching equipment.
S3: sequentially manufacturing an insulating layer, a barrier layer and a seed layer through vapor deposition equipment; the vapor deposition device consists of a plasma enhanced chemical vapor deposition device for manufacturing the insulating layer and a physical vapor deposition device for manufacturing the barrier layer and the seed layer.
S4: filling holes through copper filling equipment for copper plating;
s5: thinning by a thinning polishing device;
s6: bonding wafers to manufacture finished semiconductors;
the thinning polishing equipment and the copper filling equipment are respectively provided with a flexible connector, and the flexible connectors are connected with the clamping heads 1 on the wafer and are used for reducing inherent stress damage of the wafer when equipment is switched.
The technical scheme has the working principle and beneficial effects that: in the invention, the clamping head 1 is always clamped on a groove at the side edge of the wafer, and the clamping head 1 is transferred to the next process together when the processing equipment is replaced, so that the contact of the equipment to the wafer is reduced, and the phenomenon that the internal stress of the wafer is accumulated and the through hole is damaged in the process of replacing the processing equipment can be avoided. Meanwhile, for the links which are easy to damage the through holes, such as copper filling process and thinning polishing process, a flexible connector is additionally arranged on related equipment so as to realize flexible connection with the clamping head 1, thereby reducing impact and stress damage to the wafer when the clamping head 1 is connected, and further reducing the probability of damage of the through holes in the clamping process.
In order to realize the flexible connection and fixation of the flexible connector and the clamping head 1, the clamping head 1 in the manufacturing method of the invention needs to be structurally adjusted, the clamping head 1 is provided with a protruding part 11 for being clamped with the flexible connector, the protruding part 11 is provided with an inserting groove 12 for inserting the flexible connector, and the side wall of the inserting groove 12 is provided with a clamping groove 13 for being clamped with the flexible connector. The extending direction of the card slot 13 is normal to the central axis direction of the insertion slot 12, and when the insertion slot 12 is arranged in the vertical direction, as shown in fig. 2, the card slot 13 arranged on the inner wall of the insertion slot 12 is arranged in the horizontal direction, and one end of the card slot 13 communicates with the opening of the insertion slot 12.
The flexible connector consists of a driving part 2 (the driving part 2 is externally provided with a sealing sliding sleeve which is connected with a flexible locking part 4 and can slide) connected with driving equipment through a control system, a connecting part 3 which is spliced with the insertion groove 12, and a flexible locking part 4 which is used for connecting the driving part 2 and the connecting part 3, wherein the sealing sliding sleeve is movably connected with the driving part 2, the driving part 2 is movably connected with the flexible locking part 4, and the connecting part 3 is movably connected with the flexible locking part 4, and a clamping strip 31 is arranged on the connecting part 3 and is clamped with the clamping groove 13. That is, when the corresponding processing device needs to be connected with the clamping head 1, the driving device will drive the flexible connector to move integrally towards the clamping head 1, after the connecting portion 3 is inserted into the insertion groove 12, the clamping strip 31 also enters into the clamping groove 13, but at this time, the clamping strip 31 is not clamped with the clamping groove 13, along with the continuous descent of the flexible connector, the connecting portion 3 will be propped against the insertion groove 12 and the sealing sliding sleeve will be pushed by the flexible locking portion 4 to move relatively to the driving portion 2, along with the movement of the sealing sliding sleeve, the distance between the driving portion 2 and the flexible locking portion 4 is gradually shortened. Meanwhile, the driving part 2 drives the flexible locking part 4 to rotate, and drives the connecting part 3 to rotate through the flexible locking part 4 until the clamping strip 31 translates into the clamping groove 13 and is clamped with the clamping groove 13. After the clamping strip 31 is completely clamped into the clamping groove 13, the connecting part 3 can not rotate any more, the driving part 2 can not move under the force of the flexible locking part 4, and after the driving part 2 stops moving under the force of the driving part, the driving equipment is controlled by the control system to stop driving the flexible connector to move, so that the flexible connector and the clamping head 1 are clamped.
The driving part 2 is internally provided with commercial sensor equipment such as a pressure sensor, and the end part of the driving part 2 is provided with at least four transmission columns 21 with teeth, the transmission columns 21 extend into the flexible locking part 4 and are movably connected with the flexible locking part 4 through the teeth on the transmission columns 21, one end of the connecting part 3 is provided with annular teeth and is positioned in the flexible locking part 4, the other end of the connecting part penetrates through the flexible locking part 4 and is spliced with the inserting groove 12 of the clamping head 1, and the clamping strip 31 is positioned outside the flexible locking part 4.
The flexible locking portion 4 is composed of a positioning shell 41 and at least four bevel gears 42, a positioning column 43 is arranged in the positioning shell 41, the end portion of the positioning column 43 extends into the end portion of the connecting portion 3 with annular teeth, the annular teeth of the connecting portion 3 are sleeved outside the positioning column 43, the positioning column 43 is movably connected with the connecting portion 3, a transmission gear 44 is arranged on the bevel gears 42, one end of the transmission gear 44 is connected with the positioning shell 41 in an axial manner, the other end of the transmission gear 44 penetrates through the bevel gears 42 to be connected with the positioning column 43 in an axial manner, the teeth on the transmission column 21 are meshed with the teeth on the transmission gear 44, and all the transmission columns 21 are meshed with the same side of the transmission gear 44, for example, as shown in fig. 5, all the transmission columns 21 are located on the right side of the transmission gear 44, and the teeth on the transmission column 21 can be arranged on the side meshed with the transmission gear 44 only because the transmission column 21 translates unidirectionally relative to the transmission gear 44. The teeth of the bevel gear 42 mesh with the annular teeth at the end of the connecting portion 3. When the flexible connector is connected with the clamping head 1, the end part of the connecting part 3 positioned at the outer side of the positioning shell 41 is firstly inserted into the insertion groove 12, meanwhile, the clamping strip 31 also enters into the clamping groove 13, the sealing sliding sleeve moves upwards along with the continuous downward movement of the flexible connector, meanwhile, the distance between the driving part 2 and the positioning shell 41 is gradually reduced, the toothed transmission column 21 moves towards the inside of the positioning shell 41 along with the relative movement of the driving part 2, the transmission gear 44 is driven to rotate, the transmission gear 44 drives the bevel gear 42 to rotate, the bevel gear 42 drives the connecting part 3 to rotate through annular teeth of the connecting part 3, and finally drives the clamping strip 31 to be completely inserted into the clamping groove 13, so that the connection of the flexible connector and the clamping head 1 is completed.
When the clamping head is required to be separated from the flexible connector, the driving device drives the driving part 2 to move relative to the sealing sliding sleeve, or drives the sealing sliding sleeve to move relative to the driving part 2, or drives the driving part 2 and the sealing sliding sleeve to move simultaneously, and it is noted that the driving device does not refer to a certain motor alone, but can realize a whole set of commercial equipment components or the prior art combination of the movement of the driving part 2, the sealing sliding sleeve and the flexible connector, so long as the driving device can realize the functions. With the distance between the driving part 2 and the positioning shell 41, the clamping strip 31 is reversed and unlocked with the clamping groove 13, and then the flexible connector moves upwards to complete the separation of the flexible connector and the clamping head. The invention realizes flexible and relaxed connection with the clamping head 1 through the flexible connector, thereby reducing impact and stress accumulation on the wafer when the clamping head is connected, and simultaneously reducing pressure on the clamping head when the clamping head is locked by adopting a mode of horizontally rotating and locking the clamping strip 31.
If the clamping head 1 is fixed only by the clamping of the clamping strip 31 and the clamping groove 13, flexible connection can be realized, and in order to further optimize the sensitivity of the driving part 2 during connection and the connection firmness of the clamping head 1, we provide a second embodiment, that is, the positioning post 43 is provided with at least four through holes, one end of each through hole is communicated with the driving part 2, the other end is communicated with the inner bottom of the insertion groove 12, a piston 5 is arranged in each through hole, one end (top) of each piston 5 is movably connected with a limiter 6 arranged at the end of the positioning shell 41,
when the drive unit 2 is not in contact with the stopper 6, the other end (bottom) of the piston 5 is in contact with the inner bottom surface of the insertion groove 12;
when the driving part 2 abuts against the stopper 6, the other end (bottom) of the piston 5 is away from the inner bottom surface of the insertion groove 12 through the stopper 6. Thereby, the bottom of the piston 5 is in a negative pressure state with the inner bottom surface of the insertion groove 12.
The limiter 6 is composed of a U-shaped locator 61 and an abutting block 62, the locator 61 is arranged at the end part of the locating shell 41, the abutting block 62 is provided with an eccentric sleeve 63 and is connected with the eccentric sleeve 63 through a movable shaft 64 in a shaft mode, the eccentric sleeve 63 is movably connected with the locator 61, and the end part of the piston 5 extends into the locator 61 and is connected with the abutting block 62 through a rotary shaft 65 in a shaft mode. When the driving portion 2 moves to abut against the abutment block 62, the abutment block 62 drives the piston 5 to move upwards along with the continuous movement of the driving portion 2, so that a negative pressure is formed between the bottom of the piston 5 and the inner bottom surface of the insertion groove 12, and the connection firmness with the clamping head 1 is further improved. Meanwhile, with the generation of negative pressure, the abutting block 62 tends to reset, and further provides upward force for the driving part 2, so that the pressure sensor on the driving part 2 is triggered rapidly, the driving part 2 is stopped from moving continuously, and the sensitivity of the driving part 2 can be improved effectively.
A three-dimensional stacked integrated high-density semiconductor device manufactured by the above manufacturing method includes a substrate (200) disposed in a SiP package on a circuit board (100), a silicon intermediate layer (300) disposed on the substrate (200) in the SiP package, and a plurality of chip cores (400) disposed on the silicon intermediate layer (300) stacked on each other and electrically connected.
In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the device or element being referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present invention.
In the present invention, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; may be mechanically connected, may be electrically connected or may be in communication with each other; either directly or indirectly, through intermediaries, or both, may be in communication with each other or in interaction with each other, unless expressly defined otherwise. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
Although embodiments of the present invention have been disclosed above, it is not limited to the details and embodiments shown and described, it is well suited to various fields of use for which the invention would be readily apparent to those skilled in the art, and accordingly, the invention is not limited to the specific details and illustrations shown and described herein, without departing from the general concepts defined in the claims and their equivalents.
Claims (9)
1. A method for fabricating a three-dimensional stacked integrated high-density semiconductor device, comprising the steps of:
s1: preparing a substrate;
s2: deep reactive ion etching is carried out through deep hole etching equipment to form a through hole;
s3: sequentially manufacturing an insulating layer, a barrier layer and a seed layer through vapor deposition equipment;
s4: filling holes through copper filling equipment for copper plating;
s5: thinning by a thinning polishing device;
s6: bonding wafers to manufacture finished semiconductors;
the thinning polishing equipment and the copper filling equipment are respectively provided with a flexible connector, and the flexible connectors are connected with a clamping head (1) on the wafer;
the clamping head (1) is provided with a protruding portion (11) for being clamped with the flexible connector, the protruding portion (11) is provided with an inserting groove (12) for being inserted with the flexible connector, and the side wall of the inserting groove (12) is provided with a clamping groove (13) for being clamped with the flexible connector.
2. The method for manufacturing a three-dimensional stacked integrated high-density semiconductor device according to claim 1, wherein the deep hole etching apparatus in step S2 is a dry etching apparatus.
3. The method of manufacturing a three-dimensional stacked integrated high-density semiconductor device according to claim 1, wherein the vapor deposition apparatus in step S3 is composed of a plasma enhanced chemical vapor deposition apparatus for fabricating an insulating layer, and a physical vapor deposition apparatus for fabricating a barrier layer and a seed layer.
4. The method for manufacturing the three-dimensional stacked integrated high-density semiconductor device according to claim 1, wherein the flexible connector consists of a driving part (2) connected with a driving device, a connecting part (3) spliced with the insertion groove (12), and a flexible locking part (4) for connecting the driving part (2) and the connecting part (3), a clamping strip (31) is arranged on the connecting part (3), and the clamping strip (31) is clamped with the clamping groove (13).
5. The method for manufacturing the three-dimensional stacked integrated high-density semiconductor device according to claim 4, wherein at least four transmission columns (21) with teeth are arranged at the end part of the driving part (2), the transmission columns (21) extend into the flexible locking part (4) and are movably connected with the flexible locking part (4) through the teeth on the transmission columns (21), one end of the connecting part (3) is provided with annular teeth and is positioned in the flexible locking part (4), the other end of the connecting part penetrates through the flexible locking part (4) and is spliced with the inserting groove (12) of the clamping head (1), and the clamping strip (31) is positioned outside the flexible locking part (4).
6. The method for manufacturing the three-dimensional stacked integrated high-density semiconductor device according to claim 5, wherein the flexible locking portion (4) is composed of a positioning shell (41) and at least four bevel gears (42), positioning columns (43) are arranged in the positioning shell (41), the end portions of the positioning columns (43) extend into the end portions of the connecting portions (3) with annular teeth, the annular teeth of the connecting portions (3) are sleeved outside the positioning columns (43), the positioning columns (43) are movably connected with the connecting portions (3), transmission gears (44) are arranged on the bevel gears (42), one ends of the transmission gears (44) are connected with the positioning shell (41) in a shaft mode, the other ends of the transmission gears (44) penetrate through the bevel gears (42) to be connected with the positioning columns (43) in a shaft mode, the teeth on the transmission columns (21) are meshed with the teeth on the end portions of the transmission gears (44), and the teeth on the bevel gears (42) are meshed with the annular teeth on the end portions of the connecting portions (3).
7. The method for manufacturing a three-dimensional stacked integrated high-density semiconductor device according to claim 6, wherein the positioning column (43) is provided with at least four through holes, one end of each through hole is communicated with the driving part (2), the other end of each through hole is communicated with the inner bottom of the insertion groove (12), a piston (5) is arranged in each through hole, one end of each piston (5) is movably connected with a stopper (6) arranged at the end of the positioning shell (41),
when the driving part (2) is not in contact with the limiter (6), the other end of the piston (5) is in contact with the inner bottom surface of the insertion groove (12);
when the driving part (2) is abutted with the limiter (6), the other end of the piston (5) is far away from the inner bottom surface of the insertion groove (12) through the limiter (6).
8. The method of manufacturing a three-dimensional stacked integrated high-density semiconductor device according to claim 7, wherein the stopper (6) is composed of a U-shaped stopper (61) and an abutment block (62), the stopper (61) is provided at an end portion of the positioning case (41), the abutment block (62) is provided with an eccentric sleeve (63) and is axially connected with the eccentric sleeve (63) by a movable shaft (64), the eccentric sleeve (63) is movably connected with the stopper (61), and an end portion of the piston (5) extends into the stopper (61) and is axially connected with the abutment block (62) by a rotary shaft (65).
9. A three-dimensional stacked integrated high-density semiconductor device manufactured by the three-dimensional stacked integrated high-density semiconductor device manufacturing method according to claim 1, characterized by comprising a substrate (200) provided in a SiP package on a circuit board (100), a silicon intermediate layer (300) provided on the substrate (200) in the SiP package, and a plurality of chip cores (400) provided on the silicon intermediate layer (300) stacked on each other and electrically connected.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311472327.4A CN117219565B (en) | 2023-11-07 | 2023-11-07 | Three-dimensional stacked integrated high-density semiconductor device and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311472327.4A CN117219565B (en) | 2023-11-07 | 2023-11-07 | Three-dimensional stacked integrated high-density semiconductor device and manufacturing method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN117219565A CN117219565A (en) | 2023-12-12 |
| CN117219565B true CN117219565B (en) | 2024-02-23 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202311472327.4A Active CN117219565B (en) | 2023-11-07 | 2023-11-07 | Three-dimensional stacked integrated high-density semiconductor device and manufacturing method thereof |
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| CN112809186A (en) * | 2021-02-23 | 2021-05-18 | 意诚新能(苏州)科技有限公司 | Novel ultra-thin silicon chip passivation device |
| CN114250501A (en) * | 2021-12-24 | 2022-03-29 | 新阳硅密（上海）半导体技术有限公司 | Equipment and method capable of continuously carrying out electroplating and chemical plating |
| CN218918833U (en) * | 2022-11-18 | 2023-04-25 | 安徽新芯威半导体有限公司 | Wafer clamping equipment |
| CN116130413A (en) * | 2023-02-22 | 2023-05-16 | 桂林电子科技大学 | Multilayer chip three-dimensional stacking packaging method based on improved through silicon via technology |
| CN116598256A (en) * | 2023-04-24 | 2023-08-15 | 中国科学院微电子研究所 | Semiconductor device and three-dimensional stacking manufacturing method thereof |
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| NL2003528A (en) * | 2008-10-23 | 2010-04-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method. |
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| KR20030012485A (en) * | 2001-08-01 | 2003-02-12 | 삼성전자주식회사 | Clamp and apparatus for fabricating semiconductor devices having the same |
| CN105097651A (en) * | 2014-05-07 | 2015-11-25 | 盛美半导体设备（上海）有限公司 | Copper-plated thinning integrated device |
| CN112809186A (en) * | 2021-02-23 | 2021-05-18 | 意诚新能(苏州)科技有限公司 | Novel ultra-thin silicon chip passivation device |
| CN114250501A (en) * | 2021-12-24 | 2022-03-29 | 新阳硅密（上海）半导体技术有限公司 | Equipment and method capable of continuously carrying out electroplating and chemical plating |
| CN218918833U (en) * | 2022-11-18 | 2023-04-25 | 安徽新芯威半导体有限公司 | Wafer clamping equipment |
| CN116130413A (en) * | 2023-02-22 | 2023-05-16 | 桂林电子科技大学 | Multilayer chip three-dimensional stacking packaging method based on improved through silicon via technology |
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