CN117130098A - Compact adiabatic optical isolator - Google Patents
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/27—Optical coupling means with polarisation selective and adjusting means
- G02B6/2746—Optical coupling means with polarisation selective and adjusting means comprising non-reciprocal devices, e.g. isolators, FRM, circulators, quasi-isolators
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
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Abstract
The invention belongs to the technical field of integrated optics, and particularly relates to a compact heat-insulating optical isolator. The invention comprises a first cladding, a second cladding, a third cladding, a first silicon core and a second silicon core; the upper end of the first cladding is provided with a first silicon core and a second silicon core respectively; the second cladding layers are arranged on the periphery of the first silicon core and the periphery of the second silicon core; the upper end of the first silicon core and the upper end of the second silicon core are provided with a third cladding; along the light beam propagation direction, the first silicon core is a wide waveguide, the second silicon core is a narrow waveguide, and the first silicon core and the second silicon core respectively comprise an input end, a first thermal insulation coupler transition structure, a second thermal insulation coupler transition structure and an output end which are sequentially connected; the transition structure of the first thermal insulation coupler is used for realizing TE in the narrow waveguide of the input end 0 Adiabatic transfer of modes; adiabatic coupler transition structure couples TE in narrow waveguide 0 Mode conversion to TM in a broad waveguide 0 A mode; the second adiabatic coupler transition structure is used for realizing widthTM in waveguide 0 Adiabatic transfer of modes.
Description
Technical Field
The invention belongs to the technical field of integrated optics, and particularly relates to a compact heat-insulating optical isolator.
Background
In integrated photonic circuits, reflected light in the opposite direction to the forward transmitted light is generated for various reasons, for example, when an optical signal is transmitted between different structures, reflected light in the opposite direction to the original transmitted light is generated at the junction, resulting in excitation of other modes or radiation modes, thereby destroying the transmission stability and bringing various adverse effects to the device. The optical isolator reduces signal noise by blocking reflected light from reaching the laser cavity while ensuring forward transmission of light, maintains system stability, is typically placed between a laser source and subsequent devices, and is widely used in optical communication systems, papers D.Jalas, A.Petrov, M.Eich, W.Freude, S.Fan, Z.Yu, R.Baets, M.A.Melloni, J.D.Joannopoulos, M.Vanwolleghem, C.R.Doerr, and H.Renner, "What is-and What is not-an optical isolator," Nature Photon,7 (8), 579-582 (2013).
At present, an optical isolator is used as a discrete device, and the device has large size, high cost and difficult packaging. With the development of integrated optical technology, the optical isolator needs to realize monolithic integration to reduce the size of the device, improve the integration level and reliability, and reduce the cost. Adiabatic devices based on Adiabatic Mode evolution, which are important in large-scale photonic integrated chips due to their wide bandwidth and good manufacturing tolerances, are represented in paper t. -L.Liang, Y.Tu, X.Chen, Y.Huang, Q.Bai, Y.Zhao, J.Zhang, Y.Yuan, J.Li, F.Yi, W.Shao, and s. -t.ho, "A Fully Numerical Method for Designing EfficientAdiabatic Mode Evolution Structures (Adiabatic thinner, coupler, splitter, mode Converter) Applicable to Complex Geometries," j.lightw.technology, 39 (17), 5531-5547 (2021). However, in order to ensure adiabatic mode evolution so that other modes are not excited, adiabatic optical isolators require a large device size, which is counter to the trend of photonic integrated chips toward higher integration.
Disclosure of Invention
The invention aims to provide a compact adiabatic optical isolator which can realize optical isolation and conversion between different modes and can also realize transmission of mode energy between different waveguides. The optical isolator solves the problems of large size and low integration of the existing optical isolator, and aims to design the optical isolator with small size, low loss, high transmission efficiency and simple structure.
In order to achieve the aim of the invention, the technical scheme adopted by the invention is as follows: a compact adiabatic optical isolator comprises a first cladding, a second cladding, a third cladding, a first silicon core and a second silicon core; the upper end of the first cladding is provided with a first silicon core and a second silicon core respectively; the second cladding layers are arranged on the periphery of the first silicon core and the periphery of the second silicon core; the upper end of the first silicon core and the upper end of the second silicon core are provided with a third cladding; along the light beam propagation direction, the first silicon core is a wide waveguide, the second silicon core is a narrow waveguide, and the first silicon core and the second silicon core respectively comprise an input end, a first thermal insulation coupler transition structure, a second thermal insulation coupler transition structure and an output end which are sequentially connected; the first thermal insulation coupler transition structure is used for realizing TE in the narrow waveguide of the input end 0 Adiabatic transfer of modes; the adiabatic coupler transition structure converts TE in a narrow waveguide 0 Mode conversion to TM in a broad waveguide 0 A mode; the second adiabatic coupler transition structure is used for realizing TM in wide waveguide 0 Adiabatic transfer of modes.
Further as a preferable technical scheme of the invention, the wavelength of the incident light beam is set to 1550nm; refractive index n of the first silicon core and the second silicon core Si 3.455, all have a thickness of h 2 =220 nm; the input end and the output end are parallel plate waveguides; in the direction of the input end, the width of the first silicon core is W I =0.54 μm; the width of the second silicon core is w I =0.46 μm, where W I +w I A gap g=150 nm between the first and second silicon cores=1 μm; at the delivery siteThe width of the first silicon core is W in the direction of the outlet end O =0.7 μm, the width of the second silicon core is w O =0.3 μm, where W O +w O The gap G between the first and second silicon cores=150 nm=1 μm. The choice of the length of these two ends has no effect on the whole structure and can be chosen arbitrarily.
Further as a preferable technical scheme of the invention, the material of the first cladding is SiO 2 Refractive index n SiO2 =1.445, thickness h 1 Width W 0 >W I +w I +g; the second cladding layer is made of Air and has a refractive index n Air =1, thickness h 2 =220 nm; the third cladding layer is made of Ce, YIG and refractive index n Ce:YIG =2.2, thickness h 3 Width W 0 。
Further as a preferred embodiment of the present invention, the first adiabatic coupler transition structure comprises a segment in the beam propagation direction, the segment being connected by a straight line with a width W 1 =0.54 μm and W 2 Wherein 0.54 μm<W 2 <Length L of 0.595 μm t1 ＝13.696μm。
Further as a preferred embodiment of the present invention, the adiabatic coupler conversion structure includes ten segments in a beam propagation direction: segment one is connected by straight line with width W 2 And W is a =0.595 μm, length L 1 =43.57 μm; segment two is connected by a straight line with width W a =0.595 μm and W b =0.597 μm, length L 2 = 68.592 μm; segment III is connected by a straight line with width W b =0.597 μm and W c =0.598 μm, length L 3 = 167.485 μm; segment four is connected by straight line with width W c =0.598 μm and W d =0.599 μm, length L 4 = 137.295 μm; segment five is connected by a straight line with width W d =0.599 μm and W e Length l=0.60 μm 5 = 151.88 μm; segment six is connected by a straight line with width W e =0.60 μm and W f =0.601 μm, length L 6 = 143.955 μm; segment seven is connected by a straight line with width W f =0.601 μm and W g =0.602 μm, length L 7 ＝81.77μm; segment eight is connected by a straight line with width W g =0.602 μm and W h =0.604 μm, length L 8 = 75.125 μm; segment nine is connected by a straight line with width W h =0.604 μm and W k =0.608 μm, length L 9 = 38.488 μm; the ten segments are connected by straight lines with width W k =0.608 μm and W 3 Length L 10 Total length L of segment one to segment ten = 12.982 μm t2 ＝921.142μm。
Further as a preferred embodiment of the invention, the second adiabatic coupler transition structure comprises a segment in the direction of propagation of the beam, the segment being connected by a straight line with a width W 3 And W is 4 =0.70 μm, 0.608 μm<W 3 <Length L of 0.7 μm t3 ＝2.813μm。
Further, as a preferable embodiment of the present invention, W 2 ＝0.59μm。
Further, as a preferable embodiment of the present invention, W 3 ＝0.63μm。
Compared with the prior art, the compact heat-insulating optical isolator provided by the invention has the following technical effects:
(1) The invention relates to an adiabatic coupler conversion structure of a compact adiabatic optical isolator, which is used for TE in a narrow waveguide 0 Mode conversion to TM in a broad waveguide 0 Modes, realizing TE between different waveguides 0 Mode and TM 0 The conversion connection between modes not only realizes the conversion between different modes, but also realizes the transmission of mode energy between different waveguides.
(2) The heat-insulating optical isolator provided by the invention can realize 90% of power conversion efficiency only by 108 mu m of total length, and can realize 90% of power transmission efficiency only by 1540 mu m of traditional design, compared with the traditional design, the size of the device of the heat-insulating optical isolator is shortened by 14 times, and the integration level can be pushed to a higher level.
Drawings
FIG. 1 is a schematic diagram of the input end of an adiabatic opto-isolator in accordance with an embodiment of the present invention;
FIG. 2 is a schematic diagram of the output end of an adiabatic opto-isolator in accordance with an embodiment of the present invention;
FIG. 3 is a schematic representation of the effective refractive index of corresponding modes for each waveguide width W of an adiabatic opto-isolator in accordance with an embodiment of the present invention;
FIG. 4 is a top view of a first silicon die and a second silicon die of an adiabatic opto-isolator according to an embodiment of the present invention;
FIG. 5 is a schematic diagram showing the mode conversion efficiency of the present invention in comparison with a conventional design, i.e., a linear shape connection;
wherein, the reference numerals are as follows: 1-a first cladding layer; 2-a second cladding layer; 3-a third cladding layer; 4-a first silicon core; 5-a second silicon core; 6-input terminal; 7-a first thermally insulating coupler transition structure; 8-adiabatic coupler switching structure; 9-a second adiabatic coupler transition structure; 10-output terminal.
Detailed Description
The invention is further explained in the following detailed description with reference to the drawings so that those skilled in the art can more fully understand the invention and can practice it, but the invention is explained below by way of example only and not by way of limitation.
As shown in fig. 1-2, a compact adiabatic optical isolator includes a first cladding 1, a second cladding 2, a third cladding 3, a first silicon core 4, and a second silicon core 5; the upper end of the first cladding layer 1 is provided with a first silicon core 4 and a second silicon core 5 respectively; the second cladding layers 2 are arranged around the first silicon core 4 and the second silicon core 5; the upper ends of the first silicon core 4 and the second silicon core 5 are provided with a third coating layer 3; along the light beam propagation direction, the first silicon core 4 is a wide waveguide, the second silicon core 5 is a narrow waveguide, and the first silicon core 4 and the second silicon core 5 respectively comprise an input end 6, a first thermal insulation coupler transition structure 7, a thermal insulation coupler transition structure 8, a second thermal insulation coupler transition structure 9 and an output end 10 which are sequentially connected; the first adiabatic coupler transition structure 7 is used for realizing TE in the narrow waveguide of the input end 6 0 Adiabatic transfer of modes; adiabatic coupler transition structure 8 converts TE in narrow waveguides 0 Mode conversion to TM in a broad waveguide 0 A mode; a second adiabatic coupler transition structure 9 is used to realize TM in a wide waveguide 0 Adiabatic transfer of modes.
The wavelength of the incident beam is set to 1550nm; refractive index n of first silicon core 4 and second silicon core 5 Si 3.455, all have a thickness of h 2 =220 nm; the input end 6 and the output end 10 are parallel plate waveguides; in the direction of the input end 6, the width of the first silicon core 4 is W I =0.54 μm; the width of the second silicon core 5 is w I =0.46 μm, where W I +w I A gap g=150 nm between the first silicon core 4 and the second silicon core 5=1 μm; in the direction of the output end 10, the width of the first silicon core 4 is W O =0.7 μm, the width of the second silicon core 5 is w O =0.3 μm, where W O +w O The gap G between the first silicon core 4 and the second silicon core 5=150 nm=1 μm. The choice of the length of these two ends has no effect on the whole structure and can be chosen arbitrarily.
As shown in FIG. 3, the present invention calculates the width W of the wide waveguide as the width W of the first silicon core 4 from the input end width W I Change to output width w=0.54 μm O The narrow waveguide is the width w of the second silicon core 5 from the input end width w =0.7 μm I Change to output width w=0.46 μm O Effective refractive index change plot for each mode, given TE in the wide waveguide first silicon core 4 and the narrow waveguide second silicon core 5 =0.3 μm 0 Mode and TM 0 The effective propagation refractive index of the modes varies with the waveguide width W. As can be seen from the black solid line on the figure, TE in narrow waveguide 0 Mode transition to TM in a wide waveguide around width w=0.6 μm 0 A mode.
To achieve TE in narrow waveguides 0 TM in mode and broad waveguide 0 Transition between modes: first, designing a transition structure 7 of a first thermal insulation coupler to realize TE in a narrow waveguide 0 Adiabatic transfer of modes; second, design an "adiabatic coupler transition structure 8" to transition TE in narrow waveguides 0 Mode conversion to TM in a broad waveguide 0 A mode; third, a "second adiabatic coupler transition structure 9" is designed to achieve TM in a wide waveguide 0 Adiabatic transfer of modes. Through the design of the three steps, the optical isolation can be realized, namely TE in the narrow waveguide can be realized 0 TM mode transmission into wide waveguide 0 Mode: does not takeOnly the conversion between different modes is realized, and the transmission of mode energy between different waveguides is realized. Meanwhile, in order to improve the integration level of the photon integrated chip and realize smaller size so as to meet the development requirement of the new generation of information technology, an adiabatic optical isolator which is as short as possible is designed to enable TE in a narrow waveguide 0 Mode conversion to TM in a broad waveguide 0 A mode.
The material of the first cladding layer 1 is SiO 2 Refractive index n SiO2 =1.445, thickness h 1 Width W 0 >W I +w I +g; the material of the second cladding layer 2 is Air, and the refractive index n Air =1, thickness h 2 =220 nm; the third coating layer 3 is made of Ce, YIG and has a refractive index n Ce:YIG =2.2, thickness h 3 Width W 0 。
As shown in fig. 4, the connection mode of the adiabatic optical isolator in which the width of the wide waveguide is changed between the first silicon core 4 and the narrow waveguide is changed between the second silicon core 5 is given below, and the connection mode of the wide waveguide is only given for the first silicon core 4, and the width of the narrow waveguide is calculated for the second silicon core 5 by those skilled in the art.
The first adiabatic coupler transition structure 7 comprises a segment in the beam propagation direction, which is linearly connected by a width W 1 =0.54 μm and W 2 Wherein 0.54 μm<W 2 <Length L of 0.595 μm t1 ＝13.696μm。W 2 ＝0.59μm。
The adiabatic coupler transfer structure 8 comprises ten segments in the beam propagation direction: segment one is connected by straight line with width W 2 And W is a =0.595 μm, length L 1 =43.57 μm; segment two is connected by a straight line with width W a =0.595 μm and W b =0.597 μm, length L 2 = 68.592 μm; segment III is connected by a straight line with width W b =0.597 μm and W c =0.598 μm, length L 3 = 167.485 μm; segment four is connected by straight line with width W c =0.598 μm and W d =0.599 μm, length L 4 = 137.295 μm; segment five is connected by a straight line with width W d =0.599 μm and W e Length l=0.60 μm 5 = 151.88 μm; sheetSegment six is connected by a straight line with width W e =0.60 μm and W f =0.601 μm, length L 6 = 143.955 μm; segment seven is connected by a straight line with width W f =0.601 μm and W g =0.602 μm, length L 7 =81.77 μm; segment eight is connected by a straight line with width W g =0.602 μm and W h =0.604 μm, length L 8 = 75.125 μm; segment nine is connected by a straight line with width W h =0.604 μm and W k =0.608 μm, length L 9 = 38.488 μm; the ten segments are connected by straight lines with width W k =0.608 μm and W 3 Length L 10 Total length L of segment one to segment ten = 12.982 μm t2 ＝921.142μm。
The second adiabatic coupler transition structure 9 comprises a segment in the direction of propagation of the beam, the width W being connected by a straight line 3 And W is 4 =0.70 μm, 0.608 μm<W 3 <Length L of 0.7 μm t3 ＝2.813μm。W 3 ＝0.63μm。
The length of the adiabatic opto-isolator in the present invention is selected based on typical adiabatic beam propagation theory-balanced mode switching power loss along the direction of beam propagation. Through simulation and analog calculation, the lengths selected by the fragments correspond to the same mode conversion power loss.
Fig. 5 shows the power conversion efficiency of the adiabatic opto-isolator designed in this embodiment, and compares it with a conventional design (linear shape connection). As can be seen from this figure, the device length designed by the present invention is much shorter than that required by conventional designs for the same conversion efficiency. For example, at 90% power transfer efficiency, the length required for the present design is 108 μm, while for conventional designs 1540 μm. Therefore, when the power transmission efficiency is required to be 90%, the length required by the traditional design is more than 14 times of the length required by the design, and the advantages of the heat-insulating optical isolator provided by the invention, such as small size, are fully proved, and the power-assisted photon chip is developed towards higher integration level.
While the foregoing is directed to embodiments of the present invention, other and further details of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.
Claims (8)
1. The compact heat-insulating optical isolator is characterized by comprising a first cladding (1), a second cladding (2), a third cladding (3), a first silicon core (4) and a second silicon core (5); the upper end of the first cladding (1) is provided with a first silicon core (4) and a second silicon core (5) respectively; the periphery of the first silicon core (4) and the periphery of the second silicon core (5) are respectively provided with a second cladding (2); the upper ends of the first silicon core (4) and the second silicon core (5) are provided with a third cladding (3); along the light beam propagation direction, the first silicon core (4) is a wide waveguide, the second silicon core (5) is a narrow waveguide, and the first silicon core (4) and the second silicon core (5) comprise an input end (6), a first thermal insulation coupler transition structure (7), a thermal insulation coupler transition structure (8), a second thermal insulation coupler transition structure (9) and an output end (10) which are sequentially connected; the first thermal-insulating coupler transition structure (7) is used for realizing TE in the narrow waveguide of the input end (6) 0 Adiabatic transfer of modes; the adiabatic coupler transition structure (8) converts TE in a narrow waveguide 0 Mode conversion to TM in a broad waveguide 0 A mode; the second adiabatic coupler transition structure (9) is used for realizing TM in a wide waveguide 0 Adiabatic transfer of modes.
2. A compact adiabatic optical isolator as claimed in claim 1, wherein the incident beam wavelength is set at 1550nm; refractive index n of the first silicon core (4) and the second silicon core (5) Si 3.455, all have a thickness of h 2 =220 nm; the input end (6) and the output end (10) are parallel plate waveguides; in the direction of the input end (6), the width of the first silicon core (4) is W I =0.54 μm; the width of the second silicon core (5) is w I =0.46 μm, where W I +w I =1 μm, the gap g=150 nm between the first silicon core (4) and the second silicon core (5); in the direction of the output end (10), the first silicon core4) Is of width W O =0.7 μm, the second silicon core (5) has a width w O =0.3 μm, where W O +w O =1 μm, the gap g=150 nm between the first silicon core (4) and the second silicon core (5).
3. A compact adiabatic optical isolator as claimed in claim 2, characterized in that the material of the first cladding (1) is SiO 2 Refractive index n SiO2 =1.445, thickness h 1 Width W 0 >W I +w I +g; the second cladding layer (2) is made of Air and has a refractive index n Air =1, thickness h 2 =220 nm; the material of the third coating layer (3) is Ce, YIG, and the refractive index n Ce:YIG =2.2, thickness h 3 Width W 0 。
4. A compact adiabatic optical isolator as claimed in claim 2, characterized in that the first adiabatic coupler transition structure (7) comprises a segment in the direction of propagation of the beam, the width W being connected by a straight line 1 =0.54 μm and W 2 Wherein 0.54 μm<W 2 <Length L of 0.595 μm t1 ＝13.696μm。
5. A compact adiabatic optical isolator as claimed in claim 4, characterized in that the adiabatic coupler conversion structure (8) comprises ten segments in the beam propagation direction: segment one is connected by straight line with width W 2 And W is a =0.595 μm, length L 1 =43.57 μm; segment two is connected by a straight line with width W a =0.595 μm and W b =0.597 μm, length L 2 = 68.592 μm; segment III is connected by a straight line with width W b =0.597 μm and W c =0.598 μm, length L 3 = 167.485 μm; segment four is connected by straight line with width W c =0.598 μm and W d =0.599 μm, length L 4 = 137.295 μm; segment five is connected by a straight line with width W d =0.599 μm and W e Length l=0.60 μm 5 = 151.88 μm; segment six is connected by a straight line with width W e =0.60 μm and W f =0.601 μm, length L 6 = 143.955 μm; segment seven is connected by a straight line with width W f =0.601 μm and W g =0.602 μm, length L 7 =81.77 μm; segment eight is connected by a straight line with width W g =0.602 μm and W h =0.604 μm, length L 8 = 75.125 μm; segment nine is connected by a straight line with width W h =0.604 μm and W k =0.608 μm, length L 9 = 38.488 μm; the ten segments are connected by straight lines with width W k =0.608 μm and W 3 Length L 10 Total length L of segment one to segment ten = 12.982 μm t2 ＝921.142μm。
6. A compact adiabatic optical isolator as claimed in claim 5, characterized in that the second adiabatic coupler transition structure (9) comprises a segment in the direction of propagation of the beam, the width W being connected by a straight line 3 And W is 4 =0.70 μm, 0.608 μm<W 3 <Length L of 0.7 μm t3 ＝2.813μm。
7. A compact adiabatic optical isolator as claimed in claim 4, wherein W 2 ＝0.59μm。
8. A compact adiabatic optical isolator as claimed in claim 6, wherein W 3 ＝0.63μm。
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