CN117075257A - TE (TE) 0 Mode and TE 1 Mode power equalizer - Google Patents
TE (TE) 0 Mode and TE 1 Mode power equalizer Download PDFInfo
- Publication number
- CN117075257A CN117075257A CN202311137559.4A CN202311137559A CN117075257A CN 117075257 A CN117075257 A CN 117075257A CN 202311137559 A CN202311137559 A CN 202311137559A CN 117075257 A CN117075257 A CN 117075257A
- Authority
- CN
- China
- Prior art keywords
- mode
- width
- offset
- length
- output
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005253 cladding Methods 0.000 claims abstract description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 230000002860 competitive effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1228—Tapered waveguides, e.g. integrated spot-size transformers
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/14—Mode converters
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12152—Mode converter
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12154—Power divider
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optical Integrated Circuits (AREA)
Abstract
The invention belongs to the field of integrated optics, and in particular relates to TE 0 Mode and TE 1 Mode power equalizer. The invention comprises a lower cladding, a silicon core and an upper cladding; the silicon core is arranged at the top end of the lower cladding; refractive index n of silicon core Si = 3.455, height h 2 =220 nm, input width W I Output width w=0.45 μm O =1.5 μm, offset width between center of input end and center of output end is W offset =315.5 nm, length of input end L I The length of the middle conical waveguide is L=0, and the length of the output end is L O . The power divider of the invention can divide TE at the input end 0 Mode conversion to TE at output 0 Mode and TE 1 A mode. TE proposed by the invention 0 Mode and TE 1 The mode power equalizer can realize TE 0 Mode and TE 1 Mode at outputAnd (5) power average distribution.
Description
Technical Field
The invention belongs to the field of integrated optics, and in particular relates to TE 0 Mode and TE 1 Mode power equalizer.
Background
Photonic integrated chips have undergone a technological transition from unit devices to scale integration, and the development of large-scale photonic integrated chips is one of the most competitive fields internationally. The transmission structure for transmitting different modes is designed under different requirements, so that the requirements of different situations can be met. In the design of photonic integrated chips, it is often necessary to emit TE 0 Uniform conversion of modes to TE at different waveguide widths 0 Mode and TE 1 The modes, i.e. keeping the power of both equal, go into different modules. Since different modes coexist in the same space, unavoidable crosstalk is caused, and energy difference among different modes is caused, TE is designed to be capable of 0 Mode and TE 1 A power equalizer for mode power equalization is not easy.
Disclosure of Invention
The present invention aims to solve the above problems, and provides a TE 0 Mode and TE 1 Mode power divider, TE aimed at realizing transmission 0 Uniform conversion of modes to TE at different waveguide widths 0 Mode and TE 1 A mode.
In order to achieve the aim of the invention, the technical scheme adopted by the invention is as follows:
TE (TE) 0 Mode and TE 1 The mode power equalizer comprises a lower cladding, a silicon core and an upper cladding; the silicon core is arranged at the top end of the lower cladding; refractive index n of silicon core Si = 3.455, height h 2 =220 nm, input width W I Output width w=0.45 μm O =1.5 μm, offset width between center of input end and center of output end is W offset The length of the input end is L I The length of the middle conical waveguide is L, and the length of the output end is L O 。
Further as a preferable technical scheme of the invention, the material of the lower cladding is SiO 2 Refractive index n SiO2 =1.445, width h 1 =500 nm, width W 0 >W。
Further, as a preferable embodiment of the present invention, the length of the tapered waveguide between the input end and the output end is set to l=0.
Further as a preferred embodiment of the present invention, the offset width between the center of the input end and the center of the output end needs to be set to be W offset ＝315.5nm
Further, according to a preferred embodiment of the present invention, the upper cladding layer is air.
The TE of the invention 0 Mode and TE 1 Compared with the prior art, the mode power equalizer has the following technical effects:
(1) The power divider of the invention can divide TE at the input end 0 Mode conversion to TE at output 0 Mode and TE 1 A mode.
(2) TE proposed by the invention 0 Mode and TE 1 The mode power equalizer can realize TE 0 Mode and TE 1 The power of the mode at the output is equally distributed.
Drawings
Fig. 1 is a schematic structural diagram of a power equalizer according to an embodiment of the present invention;
FIG. 2 is a top view of a silicon core according to an embodiment of the present invention;
FIG. 3 shows different offset widths W according to an embodiment of the present invention offset A transmission efficiency diagram of each mode is shown;
FIG. 4 is a TE view of the input terminal of the power equalizer according to an embodiment of the present invention 0 A schematic diagram of a pattern;
FIG. 5 shows TE excited by the output of the power equalizer according to an embodiment of the present invention 0 A schematic diagram of a pattern;
FIG. 6 shows TE excited by the output of the power equalizer according to an embodiment of the present invention 1 A schematic diagram of a pattern;
wherein, the reference numerals are as follows: 1-a lower cladding layer; 2-silicon core; 3-upper cladding.
Detailed Description
The invention is further explained in the following detailed description with reference to the drawings so that those skilled in the art can more fully understand the invention and can practice it, but the invention is explained below by way of example only and not by way of limitation.
As shown in fig. 1, a TE 0 Mode and TE 1 The mode power equalizer comprises a lower cladding layer 1, a silicon core 2 and an upper cladding layer 3; the silicon core 2 is arranged at the top end of the lower cladding 1; wherein the refractive index n of the silicon core 2 Si = 3.455, height h 2 =220 nm, input width W I Output width w=0.45 μm O =1.5 μm. The material of the lower cladding layer 1 is SiO 2 Refractive index n SiO2 =1.445, width h 1 =500 nm, width W 0 >W. The upper cladding layer 3 is air.
As shown in FIG. 2, which is a top view of the silicon core 2, the offset width between the center of the input end and the center of the output end is W offset . The length of the input end is L I The length of the middle conical waveguide is L=0, and the length of the output end is L O . The incident beam wavelength was set to 1550nm.
As shown in fig. 3, different offset widths W are shown offset Transmission efficiency of each mode is lower. From this figure, it can be seen that TE 0 Mode and TE 1 The excitation power ratio of the mode depends on the offset width W offset . It can also be seen from the figure that when the width W is offset offset At=315.5 nm, TE 0 Mode and TE 1 The power of the modes is equal. Thus, to implement TE of the present invention 0 Mode and TE 1 The mode power equally dividing device is connected in the following way:
(1) The length l=0 of the tapered waveguide between the input and output ends, i.e. the input and output ends are directly connected.
(2) The offset width between the center of the input end and the center of the output end is W offset ＝315.5nm。
TE can be realized by the layout 0 Mode and TE 1 Mode power sharing, TE constituting the present invention 0 Mode and TE 1 Mode power equalizer. In addition, input end length L I And output end length L O The selection is relatively free, and the selection is needed according to the realization needs.
At TE 0 Mode and TE 1 In the mode power equalizer, as shown in FIG. 4, the input terminal transmits TE 0 A mode; as shown in fig. 5-6, it is desirable to excite TE at the output 0 Mode and TE 1 Mode, and the power of the two modes is equal.
While the foregoing is directed to embodiments of the present invention, other and further details of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.
Claims (5)
1. TE (TE) 0 Mode and TE 1 The mode power equalizer is characterized by comprising a lower cladding (1), a silicon core (2) and an upper cladding (3); the silicon core (2) is arranged at the top end of the lower cladding (1); refractive index n of silicon core (2) Si = 3.455, height h 2 =220 nm, input width W I Output width w=0.45 μm O =1.5 μm, offset width between center of input end and center of output end is W offset The length of the input end is L I The length of the middle conical waveguide is L, and the length of the output end is L O 。
2. A TE according to claim 1 0 Mode and TE 1 The mode power equalizer is characterized in that the material of the lower cladding layer (1) is SiO 2 Refractive, refractiveRate n SiO2 =1.445, width h 1 =500 nm, width W 0 >W。
3. A TE according to claim 1 0 Mode and TE 1 A mode power equalizer, characterized in that the length of the tapered waveguide between the input and output ends is set to L = 0.
4. A TE according to claim 1 0 Mode and TE 1 A mode power equalizer, characterized in that the offset width between the center of the input end and the center of the output end is required to be set to W offset ＝315.5nm。
5. A TE according to claim 1 0 Mode and TE 1 The mode power equalizer is characterized in that the upper cladding (3) is air.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311137559.4A CN117075257B (en) | 2023-09-05 | TE (TE)0Mode and TE1Mode power equalizer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311137559.4A CN117075257B (en) | 2023-09-05 | TE (TE)0Mode and TE1Mode power equalizer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN117075257A true CN117075257A (en) | 2023-11-17 |
| CN117075257B CN117075257B (en) | 2024-07-30 |
Family
ID=
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030113066A1 (en) * | 2001-12-17 | 2003-06-19 | Heu-Gon Kim | Optical power splitter with assistance waveguide |
| CN103424805A (en) * | 2012-12-20 | 2013-12-04 | 上海信电通通信建设服务有限公司 | Y-bifurcation-structured 1 * 2 optical power splitter |
| JP2019144433A (en) * | 2018-02-21 | 2019-08-29 | 株式会社フジクラ | Substrate type optical waveguide and introducing method |
| CN112666652A (en) * | 2020-12-26 | 2021-04-16 | 华中光电技术研究所（中国船舶重工集团公司第七一七研究所） | Polarization-independent optical power beam splitter |
| CN115951451A (en) * | 2022-10-31 | 2023-04-11 | 南通大学 | Is suitable for TM 1 And TE 2 Adiabatic mode converter for mode conversion |
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030113066A1 (en) * | 2001-12-17 | 2003-06-19 | Heu-Gon Kim | Optical power splitter with assistance waveguide |
| CN103424805A (en) * | 2012-12-20 | 2013-12-04 | 上海信电通通信建设服务有限公司 | Y-bifurcation-structured 1 * 2 optical power splitter |
| JP2019144433A (en) * | 2018-02-21 | 2019-08-29 | 株式会社フジクラ | Substrate type optical waveguide and introducing method |
| CN112666652A (en) * | 2020-12-26 | 2021-04-16 | 华中光电技术研究所（中国船舶重工集团公司第七一七研究所） | Polarization-independent optical power beam splitter |
| CN115951451A (en) * | 2022-10-31 | 2023-04-11 | 南通大学 | Is suitable for TM 1 And TE 2 Adiabatic mode converter for mode conversion |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN113359238B (en) | Two-arm unequal-height asymmetric waveguide fiber end face coupler based on mode evolution | |
| WO2007097337A1 (en) | Nonlinear optical fiber, nonlinear optical device, and optical signal processor | |
| CN104813204A (en) | Waveguide structures, waveguide coupling structures, and manufacturing methods | |
| CN114721176A (en) | Polarization controller based on-chip mode conversion | |
| CN109491013B (en) | Spot-on-spot converter structure and parameter optimization method | |
| CN116540357A (en) | Waveguide mode converter of ultra-compact ultra-wideband based on longitudinal refractive index modulation | |
| CN106068470A (en) | Fiber waveguide and and use its optics and variable wavelength laser | |
| CN111025469B (en) | Silicon-based multimode 3dB beam splitter based on multimode interference coupler | |
| CN206422378U (en) | A kind of high-power random fiber laser based on inclined optical fiber grating | |
| CN113376743B (en) | Spot-size converter based on long-period grating | |
| CN117092748A (en) | Compact adiabatic mode evolution ware | |
| CN117075257A (en) | TE (TE) 0 Mode and TE 1 Mode power equalizer | |
| CN117075257B (en) | TE (TE)0Mode and TE1Mode power equalizer | |
| CN115951451B (en) | Be applicable to TM 1 And TE (TE) 2 Adiabatic mode converter for mode conversion | |
| CN115144964B (en) | Silicon-based array waveguide grating based on Euler bending wide waveguide | |
| CN115718347B (en) | Suitable for TE 1 And TE (TE) 3 Adiabatic mode switching connector for switching between modes | |
| CN117130098A (en) | Compact adiabatic optical isolator | |
| CN116794768A (en) | Adiabatic mode coupler | |
| JP2017227770A (en) | Spot size converter | |
| US20220006201A1 (en) | Ultra-broadband mode size converter based on an on-chip Luneburg lens | |
| CN112859239B (en) | InP-based spot size converter, spot size conversion structure and preparation method | |
| JP2007047694A (en) | Optical transmission line and optical element possessing the same | |
| CN219609274U (en) | Mode spot converter based on silicon waveguide | |
| CN118295063A (en) | Light spot size converter | |
| CN116107026A (en) | Mode spot converter based on silicon waveguide |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant |