CN116941035A - 功率半导体装置以及电力转换装置 - Google Patents
功率半导体装置以及电力转换装置 Download PDFInfo
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Abstract
功率半导体装置具备:第一电路体,其构成将直流电流转换为交流电流的逆变器电路的上臂;第二电路体,其构成所述逆变器电路的下臂;以及电路基板,其形成配置所述第一电路体和所述第二电路体的贯通孔,在所述第一电路体与所述第二电路体之间具有中间基板,所述中间基板具有传递所述交流电流的交流布线图案,所述第一电路体和所述第二电路体与所述交流布线图案面接触地连接。
Description
技术领域
本发明涉及一种功率半导体装置以及电力转换装置。
背景技术
通过功率半导体装置的开关动作进行电力转换的电力转换装置由于转换效率高,因此被广泛用于民用、车载用、铁路用、变电设备等。该功率半导体装置通过开关动作而流过大电流,因此要求低损耗的电流路径。例如,在车载用途中,要求小型化、低损耗化。
在专利文献1中公开了一种功率半导体装置,其是具有功率半导体元件的电路体,在集电极侧引线框焊接有作为功率半导体元件的上臂侧IGBT、上臂侧二极管、下臂侧IGBT、下臂侧二极管。
现有技术文献
专利文献
专利文献1:日本特开2018-142620号公报
发明内容
发明所要解决的课题
在专利文献1所记载的装置中,在小型化、低损耗化方面存在课题。
用于解决问题的方案
根据本发明的功率半导体装置,具备:第一电路体,其构成将直流电流转换为交流电流的逆变器电路的上臂;第二电路体,其构成所述逆变器电路的下臂;以及电路基板,其形成配置所述第一电路体和所述第二电路体的贯通孔,在所述第一电路体与所述第二电路体之间具有中间基板,所述中间基板具有传递所述交流电流的交流布线图案,所述第一电路体和所述第二电路体与所述交流布线图案面接触地连接。
发明效果
根据本发明,能够实现功率半导体装置的小型化、低损耗化。
附图说明
图1是电力转换装置的俯视图。
图2是电力转换装置的剖视图。
图3是功率半导体装置的主要部分的立体图。
图4是功率半导体装置的电路结构图。
图5是电路基板的俯视图。
图6是表示电路基板的贯通孔的变形例1的俯视图。
图7是表示电路基板的贯通孔的变形例2的俯视图。
具体实施方式
以下,参照附图对本发明的实施方式进行说明。以下的记载及附图是用于例示说明本发明的,为了说明的明确化,适当地进行了省略及简化。本发明也能够以其他各种方式实施。只要没有特别限定,各构成要素可以是单个,也可以是多个。
为了容易理解发明,附图中所示的各构成要素的位置、大小、形状、范围等有时不表示实际的位置、大小、形状、范围等。因此,本发明未必限定于附图所公开的位置、大小、形状、范围等。
在具有相同或同样的功能的构成要素存在多个的情况下,有时对相同的附图标记标注不同的下标来进行说明。但是,在不需要区分这些多个构成要素的情况下,有时省略下标来进行说明。
图1是由功率半导体装置100构成的电力转换装置1000的俯视图。
功率半导体装置100具备构成后述的逆变器电路的上臂的第一电路体110以及构成逆变器电路的下臂的第二电路体120。
电力转换装置1000通过将U相的功率半导体装置100U、V相的功率半导体装置100V、W相的功率半导体装置100W并联配置于电路基板200而构成。功率半导体装置100U、100V、100W是同样的芯片结构,在以下的说明中,有时简称为功率半导体装置100。
电路基板200形成有供第一电路体110和第二电路体120贯通电路基板200的上表面和下表面而配置的贯通孔,在第一电路体110与第二电路体120之间具有中间基板210。贯通孔的详细情况后述。
在电路基板200的一侧(图示的上方侧),正极的直流布线图案220和负极的直流布线图案230以相互绝缘状态层叠而形成。正极的直流布线图案220与正极端子221连接,负极的直流布线图案230与负极端子231连接。
在电路基板200的另一侧(图示的下方侧)形成有向电路基板200的中间基板210传递交流电流的交流布线图案240,并且,在控制布线图案区域250形成有经由引线251向各电路体110、120内的晶体管140的栅极电极传递控制信号的控制布线图案。交流布线图案240与交流端子241连接,控制布线图案区域250与省略图示的控制端子连接。
第一电路体110和第二电路体120分别由二极管130和晶体管140构成,从电路基板200的面的一侧沿着另一侧依次配置有直流布线图案220、230、二极管130、晶体管140、控制布线图案区域250。晶体管140例如是IGBT。
在电路基板200上搭载电容器等电路零件300。电容器例如是薄膜电容器、陶瓷电容器等。也可以搭载电容器以外的其他电子零件。电路零件300可以配置于直流布线图案220、230侧,也可以配置于交流布线图案240侧。
并联配置于电路基板200的三相的功率半导体装置100的第一电路体110和第二电路体120被密封部件400密封。此外,在图1中,为了明示内部的结构,以透过状态图示密封部件400。密封部件400是绝缘性的树脂材料等,包含第一电路体110和第二电路体120的全部、直流布线图案220、230、交流布线图案240、控制布线图案区域250的一部分,形成在电路基板200的上下。此外,密封部件400也可以包含电路零件300而形成。
图2是电力转换装置1000的剖视图。表示图1的X-X’线的截面。
晶体管140的发射极通过焊料150与发射极侧引线框140E接合。晶体管140的集电极通过焊料150与集电极侧引线框140C接合。在电路基板200的一个面配置三相的功率半导体装置100的第一电路体110和第二电路体120的发射极侧,在另一个面配置三相的功率半导体装置100的第一电路体110和第二电路体120的集电极侧。由此,各晶体管140的芯片朝向相同的面,因此能够简化制造工序。
第一电路体110的发射极侧引线框140E与中间基板210的交流布线图案240面接触地连接。另外,第二电路体120的集电极侧引线框140C与中间基板210的交流布线图案240面接触地连接。
在电力转换装置1000中,在夹着电路基板200的第一电路体110和第二电路体120的发射极侧以及第一电路体110和第二电路体120的集电极侧分别经由绝缘部件接触配置有省略图示的冷却装置。在电路基板200设置贯通孔,使第一电路体110和第二电路体120在电路基板200的两面露出,因此冷却装置能够从两面冷却功率半导体装置100。并且,各引线框140E、140C与交流布线图案240面接触而连接的中间基板210位于冷却装置之下,因此能够高效地冷却发热大的交流布线图案240。
图3是功率半导体装置100U的主要部分的立体图。
如上所述,第一电路体110的发射极侧引线框140E与中间基板210的交流布线图案240面接触地连接。另外,第二电路体120的集电极侧引线框140C与中间基板210的交流布线图案240面接触地连接。各引线框140E、140C与交流布线图案240在中间基板210上以面接触,因此能够确保接触面积,降低流动的电流的损失。另外,连接第一电路体110的发射极侧和第二电路体120的集电极侧的电流路径也被最短化,因此能够降低损耗,能够使装置小型化。并且,通过使连接第一电路体110的发射极侧和第二电路体120的集电极侧的电流路径也最短化,能够降低电感,能够降低高速开关时的浪涌电压。另外,由于面接触而连接,因此在制造过程中能够稳定地进行连接工序,在制造后能够使装置的结构牢固。
并且,第一电路体110的集电极侧引线框140C形成与正极的直流布线图案220面接触而连接的区域。第二电路体120的发射极侧引线框140E形成与负极的直流布线图案230面接触而连接的区域。因此,能够确保与各直流布线图案220、230的接触面积,降低电流的损耗。另外,电流路径也被最短化,因此能够降低损耗,能够使装置小型化。另外,由于面接触而连接,因此在制造过程中能够稳定地进行连接工序,在制造后能够使装置的结构牢固。
如图3所示,功率半导体装置100的第一电路体110和第二电路体120与电路基板200的直流布线图案220、230和交流布线图案240面接触地连接。然后,如图2所示,在电路基板200设置贯通孔,在电路基板200的贯通孔配置第一电路体110和第二电路体120,构成三相的功率半导体装置100。这样构成的电力转换装置1000能够实现薄型化,能够实现小型化、低损耗化。
图4是功率半导体装置100的电路结构图。
电力转换装置1000由U相、V相、W相的功率半导体装置100U、100V、100W构成逆变器电路。
各功率半导体装置100具备构成逆变器电路的上臂的第一电路体110以及构成逆变器电路的下臂的第二电路体120。第一电路体110和第二电路体120分别由二极管130和晶体管140构成。
在与正极端子221连接的直流布线图案220和与负极端子231连接的直流布线图案230之间连接有作为电路零件300的平滑用的电容器。省略图示的电池等直流电源与正极端子221和负极端子231连接。逆变器电路将输入的直流电力转换为交流电力,并将三相的交流电流向交流端子241输出。如上所述,第一电路体110的发射极侧和第二电路体120的集电极侧与中间基板210的交流布线图案240面接触地连接,因此能够确保接触面积,降低流动的电流的损耗。另外,将第一电路体110的发射极侧与第二电路体120的集电极侧相连的电流路径也被最短化。
图5是电力转换装置1000的电路基板200的俯视图。
与图1的不同点在于,去除了W相的第一电路体110和第二电路体120。其他与图1相同,对相同部位标注相同的附图标记并省略其说明。
图5所示的电力转换装置1000是与图1所示的电力转换装置1000相同的结构,但图5是用于说明形成于电路基板200的贯通孔260的图。贯通孔260是为了将第一电路体110和第二电路体120贯通配置于电路基板200的上表面和下表面而形成的。在该例中,贯通孔260将配置有第一电路体110的孔与配置有第二电路体120的孔连通,在其中间形成有中间基板210。中间基板210延伸至配置有直流布线图案220、230的电路基板200的附近。由此,如上所述,能够使第一电路体110的发射极侧引线框140E和第二电路体120的集电极侧引线框140C与中间基板210的交流布线图案240面接触而连接。在图5中,以形成于电路基板200的W相的贯通孔260为例进行了说明,但U相、V相也是同样的结构。
图6是表示电路基板200的贯通孔260的变形例1的俯视图。
与图1的不同点在于,从电路基板200去除了W相的第一电路体110和第二电路体120。其他与图1相同,对相同部位标注相同的附图标记并省略其说明。
在图5中,示出了中间基板210延伸至配置有直流布线图案220、230的电路基板200的附近的例子,但在图6所示的变形例1中,中间基板210与配置有直流布线图案220、230的电路基板200相连。换言之,贯通孔260分别独立地形成配置有第一电路体110的第一贯通孔261和配置有第二电路体120的第二贯通孔262,具有交流布线图案的中间基板210设置在第一贯通孔26与第二贯通孔262之间。该变形例1的结构也起到与上述相同的效果。
图7是表示电路基板200的贯通孔260的变形例2的俯视图。
与图1的不同点在于,从电路基板200去除了W相的第一电路体110和第二电路体120。其他与图1相同,对相同部位标注相同的附图标记并省略其说明。
如图7所示,电路基板200分离为第一电路基板201和第二电路基板202。即,电路基板200中,配置有直流布线图案220、230和电路零件300的第一电路基板201与配置有交流布线图案240和第一电路体110及第二电路体120的控制布线图案区域250的第二电路基板202分别分体构成。并且,中间基板210与第二电路基板202一体地设置,延伸至配置有直流布线图案220、230的第一电路基板201的附近。并且,在第一电路基板201与第二电路基板202之间形成贯通孔260。
即使是该变形例2的结构,除了起到与上述同样的效果之外,还能够降低电路基板200的材料的成本,能够提高电路基板200的生产率。
根据以上说明的实施方式,能够得到以下的作用效果。
(1)一种功率半导体装置100,具备:第一电路体110,其构成将直流电流转换为交流电流的逆变器电路的上臂;第二电路体120,其构成逆变器电路的下臂;以及电路基板200,其形成配置第一电路体110和第二电路体120的贯通孔260,在第一电路体110与第二电路体120之间具有中间基板210,中间基板210具有传递交流电流的交流布线图案240,第一电路体110和第二电路体120与交流布线图案240面接触地连接。由此,能够实现功率半导体装置的小型化、低损耗化。
本发明并不限定于上述的实施方式,只要不损害本发明的特征,在本发明的技术思想的范围内考虑的其他方式也包含在本发明的范围内。另外,也可以构成为将上述的实施方式与多个变形例组合。
符号说明
100、100U、100V、100W—功率半导体装置,110—第一电路体,120—第二电路体,130—二极管,140—晶体管,140C—集电极侧引线框,140E—发射极侧引线框,150—焊料,200—电路基板,201—第一电路基板,202—第二电路基板,210—中间基板,220、230—直流布线图案,221—正极端子,231—负极端子,240—交流布线图案,241—交流端子,250—控制布线图案区域,251—引线,260—贯通孔,261—第一贯通孔,262—第二贯通孔,300—电路零件,400—密封部件,1000—电力转换装置。
Claims (9)
1.一种功率半导体装置,其特征在于,具备:
第一电路体,其构成将直流电流转换为交流电流的逆变器电路的上臂;
第二电路体,其构成所述逆变器电路的下臂;以及
电路基板,其形成配置所述第一电路体和所述第二电路体的贯通孔,在所述第一电路体与所述第二电路体之间具有中间基板,
所述中间基板具有传递所述交流电流的交流布线图案,所述第一电路体和所述第二电路体与所述交流布线图案面接触地连接。
2.根据权利要求1所述的功率半导体装置,其特征在于,
在所述电路基板的一个面配置有所述第一电路体的发射极侧和所述第二电路体的发射极侧,在所述电路基板的另一个面配置有所述第一电路体的集电极侧和所述第二电路体的集电极侧。
3.根据权利要求1所述的功率半导体装置,其特征在于,
所述电路基板具有传递所述直流电流的直流布线图案,所述第一电路体和所述第二电路体与所述直流布线图案面接触地连接。
4.根据权利要求3所述的功率半导体装置,其特征在于,
所述第一电路体和所述第二电路体分别由二极管和晶体管构成,
沿着所述电路基板的面依次配置所述直流布线图案、所述二极管、所述晶体管、所述晶体管的控制布线图案。
5.根据权利要求3所述的功率半导体装置,其特征在于,
所述贯通孔分别独立地形成于配置所述第一电路体的第一贯通孔和配置所述第二电路体的第二贯通孔,具有所述交流布线图案的所述中间基板设置于所述第一贯通孔与所述第二贯通孔之间。
6.根据权利要求3所述的功率半导体装置,其特征在于,
所述电路基板将配置所述直流布线图案的第一电路基板和配置所述交流布线图案和所述第一电路体及所述第二电路体的控制布线图案的第二电路基板分别分体地构成。
7.根据权利要求3所述的功率半导体装置,其特征在于,
所述第一电路体和所述第二电路体由密封部件密封。
8.根据权利要求3所述的功率半导体装置,其特征在于,
在所述电路基板上搭载有电路零件。
9.一种电力转换装置,其特征在于,
在所述电路基板上以三相并联配置有桥臂电路,所述桥臂电路由权利要求1至8中任一项所述的功率半导体装置构成一相。
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