CN116698197B - Temperature measuring device with reflecting component applied to integrated circuit equipment - Google Patents
Temperature measuring device with reflecting component applied to integrated circuit equipment Download PDFInfo
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- CN116698197B CN116698197B CN202310978853.1A CN202310978853A CN116698197B CN 116698197 B CN116698197 B CN 116698197B CN 202310978853 A CN202310978853 A CN 202310978853A CN 116698197 B CN116698197 B CN 116698197B
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- 230000005855 radiation Effects 0.000 claims abstract description 55
- 238000010438 heat treatment Methods 0.000 claims abstract description 50
- 238000002310 reflectometry Methods 0.000 claims abstract description 27
- 241000258971 Brachiopoda Species 0.000 claims abstract description 10
- 238000000605 extraction Methods 0.000 claims abstract description 9
- 230000005540 biological transmission Effects 0.000 claims abstract description 4
- 238000007789 sealing Methods 0.000 claims description 22
- 239000000725 suspension Substances 0.000 claims description 18
- 229910000838 Al alloy Inorganic materials 0.000 claims description 14
- 238000001125 extrusion Methods 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 239000010453 quartz Substances 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 10
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 claims description 10
- 238000007747 plating Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- 238000005259 measurement Methods 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 7
- 230000035515 penetration Effects 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 239000004065 semiconductor Substances 0.000 abstract description 9
- 239000000758 substrate Substances 0.000 description 13
- 238000010586 diagram Methods 0.000 description 7
- 239000011148 porous material Substances 0.000 description 6
- 230000000903 blocking effect Effects 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 230000007774 longterm Effects 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000009529 body temperature measurement Methods 0.000 description 2
- 238000005339 levitation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/0003—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The invention provides a temperature measuring device with a reflecting component applied to integrated circuit equipment, which belongs to the technical field of semiconductor integrated circuits and comprises a base, wherein an operating frame is fixedly connected to the upper end surface of the base, one end of the operating frame is provided with a vacuum extraction opening, one end of the operating frame, which is far away from a true air extraction opening, is provided with a wafer transmission opening, the upper end of the operating frame is provided with a heating lamp shell, and the inside of the operating frame is provided with a reflecting plate. The invention solves the problems that the wafer needs to be subjected to rapid heat treatment in the manufacturing process of the semiconductor wafer, the actual emissivity of the wafer can be calculated and measured through radiation signals received by two infrared thermometers which receive primary radiation and multi-reflection radiation, but the actual emissivity of the wafer is often lower, and the dielectric film can realize higher reflectivity, but the bandwidth is narrower, so that a film system and a complex film layer thereof need to be arranged up to dozens of layers, and the manufacturing difficulty and the cost are extremely high.
Description
Technical Field
The invention belongs to the technical field of semiconductor integrated circuits, and particularly relates to a temperature measuring device with a reflecting component applied to integrated circuit equipment, in particular to the reflecting component applied to the integrated circuit equipment and the temperature measuring device with the reflecting component.
Background
The emissivity of the wafer is related to parameters such as the surface condition, the surface geometry, the surface physicochemical structure state, the measurement temperature, the measurement angle and the like of the wafer, and the emissivity of the wafer is common in daily life.
Chinese patent application CN110044490a discloses a fast switching emissivity measuring device and measuring method, comprising: the device comprises a source body, a switching type bracket, an ellipsoidal mirror, a radiation receiving unit and a data processing unit; the switching type bracket is used for fixing the standard component and the component to be tested and rapidly switching the positions of the standard component and the component to be tested; the source body is used for emitting heat radiation and cold radiation to the standard component or the component to be tested; the ellipsoidal mirror is used for bunching the heat radiation and the cold radiation reflected by the standard piece or the piece to be detected; the radiation receiving unit is used for receiving heat radiation or cold radiation of the ellipsoidal mirror bunched beam and converting the heat radiation or the cold radiation into a cold-heat radiation voltage value signal; the data processing unit is used for calculating the emissivity of the to-be-measured piece according to the cold and hot radiation voltage value signal; the switching type support comprises a rotary support and a positioning base, wherein the rotary support is arranged on the positioning base, the rotary support rotates around a rotary shaft of the rotary support so as to switch positions of the standard part and the part to be detected, the positioning base is provided with a positioning part, and the positioning part is used for positioning the rotary position of the rotary support.
The device and the method for measuring the emissivity of the fast switching type semiconductor wafer have the following technical problems that the fast heat treatment is required to be carried out on the wafer in the manufacturing process of the semiconductor wafer, the actual emissivity of the wafer can be calculated and measured through radiation signals received by two infrared thermometers which receive primary radiation and multi-reflection radiation, but the actual emissivity of the wafer is often lower, and the dielectric film can realize higher reflectivity, but the bandwidth is narrower, so that a film system and a complex film layer thereof are required to be arranged, and the problems of high manufacturing difficulty and high cost are caused.
Disclosure of Invention
Based on the technical problems existing in the prior art, the invention provides a temperature measuring device with a reflecting component applied to integrated circuit equipment, which solves the technical problems that in the prior art, a semiconductor wafer needs to be subjected to rapid heat treatment in the manufacturing process, the actual emissivity of the wafer can be calculated and measured through radiation signals received by two infrared thermometers receiving primary radiation and multi-reflection radiation, but the actual emissivity of the wafer is often lower, and a dielectric film can realize higher reflectivity, but has a narrower bandwidth, so that the film system is required to be provided with tens of extremely complex film layers, and the defects of high manufacturing difficulty and cost are caused.
In order to achieve the above purpose, the present invention adopts the following technical scheme: the temperature measuring device comprises a base, wherein an operating frame is fixedly connected to the surface of the upper end of the base, a vacuum extraction opening is formed in one end of the operating frame, a wafer transmission opening is formed in one end of the operating frame away from the true air extraction opening, a heating lamp shell is arranged at the upper end of the operating frame, a reflecting plate is arranged in the operating frame, and an adjusting device is arranged on the inner wall of the operating frame and comprises a vacuum cavity, a reflecting assembly and a temperature measuring assembly; the inner wall at the handling frame is offered to the vacuum cavity, the bottom fixed connection of vacuum cavity upper end and heating lamp casing, a plurality of connecting hole has been offered on the surface of heating lamp casing, the surface at the heating lamp casing is evenly offered to a plurality of connecting hole, a plurality of connecting hole is circular honeycomb, the equal fixedly connected with heating lamp of inner wall bottom of heating lamp casing, the inner wall arc surface fixedly connected with reflection annular plate of vacuum cavity, the inner wall fixedly connected with locating frame of reflection annular plate, the bottom fixedly connected with boss of locating frame.
By adopting the technical scheme, the purpose that in the manufacturing process of the semiconductor wafer body, a rapid heat treatment process is required to be carried out on the wafer body is achieved, at the moment, the fixing frame on the base is used, the adjusting device in the fixing frame is used for rapidly heating the whole wafer body to high temperature, the wafer body is uniformly rotated, and the radiance pyrometer and the pyrometer in the adjusting device are used for mutually measuring, so that the real radiance measurement of the wafer body is facilitated.
Preferably, the upper end surface of the boss is fixedly connected with the reflecting plate, a plurality of heights Wen Jiti are slidably inserted on the surface of the boss, and a radiation rate pyrometer is slidably inserted on one side of the surface of the boss, which is close to the pyrometer body.
By adopting the preferred scheme, when radiation measurement is carried out on the wafer body in the fixed frame, the wafer body is heated and warmed up through the heating lamp on the vacuum cavity, then the vacuum cavity is isolated through the quartz plate, vacuum sealing of the vacuum cavity is realized, the wafer body is installed in the heating lamp shell and the corresponding hole, rapid heating and temperature control of the wafer body are realized, the radiation rate pyrometer is inserted into the boss at the bottom end of the fixed frame, one radiation rate pyrometer is utilized to emit infrared light to the wafer body to be measured, one part of infrared light emitted by the radiation rate pyrometer is absorbed by the wafer body, the other part of infrared light is reflected back to the radiation rate pyrometer by the wafer body, and the reflectivity of the wafer body can be calculated through the received radiation quantity reflected back by the wafer body by the radiation rate pyrometer.
Preferably, the arc surface of the quartz plate is sleeved with a sealing ring, and the arc surface of the sealing ring is abutted against the inner wall of the vacuum cavity.
By adopting the preferred scheme, the tightness can be increased through the sealing ring between the quartz plate and the vacuum cavity, so that the vacuum sealing of the vacuum cavity is realized.
Preferably, the section of the reflection annular plate is arc-shaped with an inclination angle, and the section size of the reflection annular plate is matched with the section size of the vacuum cavity.
By adopting the preferable scheme, the annular structure with a certain inclination angle of the whole reflection annular plate is achieved, the upper surface is polished, the reflectivity is high and can be more than 85%, the reflection of heat radiation is facilitated, and the rapid heating of the wafer body is assisted.
Preferably, the arc surface of the positioning frame is rotationally connected with a magnetic suspension motor stator, and the boss arc surface is rotationally connected with a magnetic suspension motor rotor corresponding to the position of the magnetic suspension motor stator.
By adopting the preferable scheme, the rotor of the magnetic suspension motor is driven to rotate by the stator of the magnetic suspension motor, so that the support column, the support ring and the edge ring are driven to rotate, the edge ring is utilized to rotate along with the wafer body at a uniform speed, and the temperature and the process uniformity of the wafer body are ensured.
Preferably, the support assembly comprises a plurality of support columns, the plurality of support columns are fixedly connected with the upper end surface of the magnetic suspension motor rotor, the upper ends of the plurality of support columns are fixedly connected with the same support ring, the upper end surface of the support ring is fixedly connected with an edge ring, and the surface of the edge ring is abutted with the wafer body.
By adopting the technical scheme, the support limit for the wafer body is achieved for convenience, the rotation of the whole wafer body position is facilitated, the support column and the support ring on the magnetic suspension motor rotor are supported and limited at the moment, and the support and the fixation for the wafer body are carried out through the edge ring.
Preferably, the surface of the reflecting plate is provided with an auxiliary device, the auxiliary device comprises a plurality of infrared thermometer through holes, the plurality of infrared thermometer through holes are uniformly distributed on the surface of the reflecting plate, the inner walls of the plurality of infrared thermometer through holes are respectively in sliding connection with the pyrometer body, the surface of the reflecting plate is provided with three crystal dome needle through holes, and the inner walls of the three crystal dome needle through holes are all in sliding penetration with the wafer body.
By adopting the technical scheme, the through holes of the infrared thermometer are arranged along the radius of the reflecting plate, the temperature of the wafer body can be measured by the infrared thermometer through the through holes, the temperature measuring range covers the surface of the wafer body, and the wafer body thimble lifts and lowers the wafer body through the through holes.
Preferably, the surface of the reflecting plate is sequentially provided with a dielectric reflecting film layer, a metal reflecting film layer and a base material, one side of the dielectric reflecting film layer is adhered with the metal reflecting film layer, one side of the metal reflecting film layer, which is far away from the dielectric reflecting film layer, is adhered with the base material, the metal reflecting film layer is a chemical nickel-phosphorus plating layer, the dielectric reflecting layer is a multilayer dielectric film coating, and the base material is made of aluminum alloy.
By adopting the preferred scheme, the number of the dielectric film layers required to be plated can be reduced, the hardness, the bonding strength and the wear resistance and corrosion resistance of the nickel-phosphorus layer are higher, compared with the case that the dielectric film is directly plated on an aluminum alloy substrate, the bonding strength of the film layer is enhanced, meanwhile, due to the stability, the permeation phenomenon of the film layer and the substrate, which occurs in the long-term high-temperature use, can be effectively formed into a bonding layer and a blocking layer between the dielectric film and the aluminum alloy substrate, the aluminum alloy surface is provided with pores after being processed, the required uniformity and the required flatness can not be obtained by directly plating the dielectric film due to the existence of the pores, the nickel-phosphorus layer can be obtained by controlling the phosphorus content, meanwhile, the reflectivity of more than 95% can be realized after polishing, even higher, the high reflectivity of the film can also meet the reflectivity requirement in the wide bandwidth range of 700-2000nm, the dielectric film can reach more than 98%, the characteristics of the dielectric film, namely the bandwidth is narrower, but the reflectivity of the high-1000 nm pyrometer is designed to realize the high reflectivity in the bandwidth range of 700-2000 nm.
Preferably, the base corresponds the position of locating frame and is equipped with fixing device, and fixing device includes a plurality of fixed column, a plurality of the fixed column all is connected with the fixed surface of base, the arc surface sliding connection of fixed column has a fixed frame, the fixed frame is close to the one end both sides of locating frame and all rotates and be connected with the locating rack, the surface of locating rack and the arc surface looks butt of locating frame, the arc surface of locating rack all overlaps there is the wind spring, the both ends of wind spring all are with locating rack fixed connection, the arc surface threaded connection of fixed column has the pivot, the bottom of pivot and the surface looks butt of fixed frame.
By adopting the technical scheme, when the positioning frame on the whole base is used, in order to better extrude and limit the position of the whole positioning frame, the rotating shaft on the fixed column is rotated through the fixed column on the base, so that the position of the sliding fixed frame on the fixed column is limited, the positioning frame rotates on the fixed frame, and the whole positioning frame is extruded and fixed by utilizing the torsion force generated by the coil spring on the positioning frame, so that the position of the whole positioning frame is limited.
Preferably, the bottom of pivot rotates and is connected with the extrusion gasket, the spacing groove has been seted up to the fixed frame surface position that corresponds the extrusion gasket, the inner wall in spacing groove and the surface butt of extrusion gasket.
By adopting the preferable scheme, when the whole rotating shaft rotates, the whole rotating shaft can be protected through the extrusion gasket rotating at the bottom end of the rotating shaft, and the position of the extrusion gasket can be fixed and limited by the limiting groove on the fixed frame.
Compared with the prior art, the invention has the advantages and positive effects that:
1. In the invention, in the manufacturing process of the semiconductor wafer body, a rapid heat treatment process is required to be carried out on the wafer body, at the moment, a fixing frame on a base is used, the whole wafer body is rapidly heated to high temperature by an adjusting device in the fixing frame, and the real emissivity of the wafer body is conveniently measured by uniformly rotating the wafer body and then mutually measuring the emissivity pyrometer and the pyrometer in the adjusting device.
2. According to the invention, when the wafer in the fixed frame is subjected to radiation measurement, the heating lamp body on the vacuum cavity is used for heating and heating, then the vacuum cavity is isolated by the quartz plate, vacuum sealing of the vacuum cavity is realized, the wafer is installed in the heating lamp shell and the corresponding hole, rapid heating and temperature control of the wafer are realized, the radiation rate pyrometer is inserted into the boss at the bottom end of the fixed frame, one radiation rate pyrometer is utilized for emitting infrared light to the wafer to be measured, one part of infrared light emitted by the radiation rate pyrometer is absorbed by the wafer, the other part of infrared light is reflected by the wafer to the radiation rate pyrometer, the radiation rate pyrometer can calculate the reflectivity of the wafer through the received radiation quantity reflected by the wafer, and the sealing ring between the quartz plate and the vacuum cavity can increase the sealing performance, so that the vacuum sealing of the vacuum cavity is realized, the whole reflection plate has a ring-shaped structure with a certain inclination angle, the upper surface is polished, the reflectivity is higher than 85%, the reflectivity is higher than that of the motor, and the motor can drive the wafer to rotate uniformly, and the wafer is convenient to rotate by the edge of the support column, and the wafer is convenient to rotate, and the wafer is supported by the support ring.
3. According to the invention, through arranging the auxiliary device, the infrared thermometer through holes are arranged along the radius of the reflecting plate, the infrared thermometer can measure the temperature of the wafer through the through holes, the temperature measuring range covers the surface of the wafer, the wafer ejector pins can lift the wafer through the through holes, the number of medium film layers required to be plated is reduced, the hardness, the bonding strength and the wear resistance and corrosion resistance of the nickel-phosphorus layer are higher, compared with the method of directly plating the medium film on the aluminum alloy substrate, the bonding strength of the film layer is enhanced, meanwhile, due to the stability, the penetration phenomenon of the film layer and the substrate, which occurs during long-term high-temperature use, can be prevented, the effective bonding layer and the blocking layer between the medium film and the aluminum alloy substrate can be formed, the aluminum alloy surface is provided with pores after processing, the medium film cannot be directly plated through the pores, the required uniformity and the flatness requirement can be obtained, the nickel-phosphorus layer can be obtained through controlling the phosphorus content, the reflectivity of more than 95% after polishing can be realized, even higher, the high reflectivity of the film can also meet the high reflectivity of more than 2000nm, the high reflectivity of the film can be realized within the wide bandwidth range of the bandwidth of the film is more than 700 nm, namely, the medium film is more than the high reflectivity of the bandwidth is more than 700 nm, the medium film is designed to be fully, and the medium bandwidth is more than the bandwidth is more than 700 nm, and the medium is more than the bandwidth is more than 700 nm, and the required, the medium is more, and the bandwidth is more and has the bandwidth, and has the bandwidth is more than the bandwidth, and can is more than the reflectance.
4. According to the invention, the fixing device is arranged, when the positioning frame on the whole base is used, in order to better extrude and limit the position of the whole positioning frame, the rotating shaft on the fixing column is rotated through the fixing column on the base, so that the position of the sliding fixing frame on the fixing column is limited, the positioning frame is extruded and fixed through the rotating positioning frame on the fixing frame by utilizing the torsion force generated by the coil spring on the positioning frame, thereby being beneficial to fixing and limiting the position of the whole positioning frame, when the whole rotating shaft rotates, the whole rotating shaft can be protected through the extrusion gasket rotating at the bottom end of the rotating shaft, and the position of the extrusion gasket can be fixed and limited through the limiting groove on the fixing frame.
Drawings
Fig. 1 is a schematic perspective view of a temperature measuring device with a reflective component applied to an integrated circuit device according to the present invention.
FIG. 2 is a schematic side view of a temperature measuring device with a reflective element applied to an integrated circuit device.
Fig. 3 is a schematic diagram showing a three-dimensional cross-sectional structure of a temperature measuring device with a reflective member applied to an integrated circuit device according to the present invention.
Fig. 4 is a schematic view showing a partial structure of a heating lamp housing of a temperature measuring device having a reflecting member applied to an integrated circuit device according to the present invention.
Fig. 5 is a schematic diagram showing a split structure of an adjusting device with a temperature measuring device applied to a reflective component of an integrated circuit device.
Fig. 6 is a schematic diagram showing a disassembled structure of a reflection assembly of a temperature measuring device having a reflection member applied to an integrated circuit device according to the present invention.
FIG. 7 is a schematic diagram showing a partial structure of a support assembly of a temperature measuring device having a reflective member applied to an integrated circuit device.
FIG. 8 is a schematic diagram showing a partial enlarged structure of a temperature measuring device with a reflecting member applied to an integrated circuit device according to the present invention.
FIG. 9 is a schematic view showing a surface structure of a reflection plate of a temperature measuring device having a reflection member applied to an integrated circuit device according to the present invention.
Fig. 10 is a schematic structural diagram of a fixing device with a temperature measuring device applied to a reflective component of an integrated circuit device according to the present invention.
Fig. 11 is a schematic diagram showing a detachment structure of a fixing device of a temperature measuring device with a reflective component applied to an integrated circuit device.
Legend description: 1. a base; 2. an operation rack; 3. a vacuum extraction opening; 4. a wafer transfer port; 5. a fixing device; 51. fixing the column; 52. a fixed frame; 53. a rotating shaft; 54. a positioning frame; 55. a coil spring; 56. extruding the gasket; 57. a limit groove; 6. a heating lamp housing; 7. an adjusting device; 701. heating the lamp body; 702. a connection hole; 703. a quartz plate; 704. a seal ring; 705. a vacuum chamber; 706. a reflective annular plate; 707. a reflective assembly; 7071. a wafer body; 7072. a boss; 7073. a magnetic levitation motor rotor; 7074. a magnetic levitation motor stator; 708. a positioning frame; 709. a support assembly; 7091. a support column; 7092. a support ring; 7093. an edge ring; 7010. a pyrometer body; 7011. a emissivity pyrometer; 8. a reflection plate; 81. a dielectric reflective film layer; 82. a metal reflective film layer; 83. a substrate; 9. an auxiliary device; 91. an infrared thermometer through hole; 92. through hole of wafer dome needle.
Detailed Description
In order that the above objects, features and advantages of the application will be more clearly understood, a further description of the application will be rendered by reference to the appended drawings and examples. It should be noted that, without conflict, the embodiments of the present application and features in the embodiments may be combined with each other.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced otherwise than as described herein, and therefore the present invention is not limited to the specific embodiments of the disclosure that follow.
In embodiment 1, as shown in fig. 1-11, the invention provides a temperature measuring device with a reflecting component applied to integrated circuit equipment, which comprises a base 1, wherein an operation frame 2 is fixedly connected to the surface of the upper end of the base 1, a vacuum extraction opening 3 is arranged at one end of the operation frame 2, a wafer transmission opening 4 is arranged at one end of the operation frame 2 far away from the vacuum extraction opening, a heating lamp shell 6 is arranged at the upper end of the operation frame 2, a reflecting plate 8 is arranged inside the operation frame 2, an adjusting device 7 is arranged on the inner wall of the operation frame 2, an auxiliary device 9 is arranged on the surface of the reflecting plate 8, and a fixing device 5 is arranged at the position of the base 1 corresponding to a positioning frame 708.
The specific arrangement and function of the adjusting means 7, the auxiliary means 9 and the fixing means 5 will be described in detail below.
As shown in fig. 3, fig. 4, fig. 5, fig. 6 and fig. 7, the adjusting device 7 comprises a vacuum cavity 705, a reflection assembly 707 and a supporting assembly 709, the vacuum cavity 705 is arranged on the inner wall of the operation frame 2, the upper end of the vacuum cavity 705 is fixedly connected with the bottom end of the heating lamp housing 6, a plurality of connecting holes 702 are arranged on the surface of the heating lamp housing 6, the plurality of connecting holes 702 are uniformly arranged on the surface of the heating lamp housing 6, the plurality of connecting holes 702 are in a circular honeycomb shape, the bottom end of the inner wall of the heating lamp housing 6 is fixedly connected with the heating lamp body 701, the circular arc surface of the inner wall of the vacuum cavity 705 is fixedly connected with the reflection annular plate 706, the inner wall of the reflection annular plate 706 is fixedly connected with the positioning frame 708, the bottom end of the positioning frame 708 is fixedly connected with the boss 7072, the upper end surface of the boss 7072 is fixedly connected with the reflection plate 8, the surface of the boss 7072 is in sliding connection with a plurality of high Wen Jiti 7010, the side of the surface of the boss 7072, which is close to the high Wen Jiti 7010, is in sliding connection with a radian pyrometer 7011, the arc surface of the quartz plate 703 is sleeved with a sealing ring 704, the arc surface of the sealing ring 704 is propped against the inner wall of the vacuum cavity 705, the section of the reflecting annular plate 706 is arc-shaped with an inclination angle, the section size of the reflecting annular plate 706 is matched with the section size of the vacuum cavity 705, the arc surface of the positioning frame 708 is rotationally connected with a magnetic suspension motor stator 7074, the position of the arc surface of the boss 7072 corresponding to the magnetic suspension motor stator 7074 is rotationally connected with a magnetic suspension motor rotor 7073, the supporting component 709 comprises a plurality of supporting columns 7091, the supporting columns 7091 are fixedly connected with the upper end surfaces of the magnetic suspension motor rotor 7073, the upper ends of the supporting columns 7091 are fixedly connected with the same supporting ring 7092, the upper end surface of the supporting ring 7092 is fixedly connected with an edge ring 7093, the surface of the edge ring 7093 abuts against the wafer body 7071. The temperature measurement range of the radiance pyrometer is 100-2000 ℃, and the temperature measurement error value is 8-12 ℃; the high temperature range of the corresponding pyrometer body is 50-2000 ℃.
The whole adjusting device 7 has the effects that the heating lamp body 701 on the vacuum cavity 705 heats up, then the quartz plate 703 isolates the vacuum cavity 705 to realize vacuum sealing of the vacuum cavity, the vacuum sealing device is arranged in the heating lamp housing 6 and corresponding holes to realize rapid heating and temperature control of the wafer 7071, the radiation rate pyrometer 7011 is inserted into the boss 7072 at the bottom end of the fixing frame, one radiation rate pyrometer 7011 is used for transmitting infrared light to the wafer 7071 to be measured, one part of infrared light transmitted by the radiation rate pyrometer 7011 is absorbed by the wafer 7071, the other part of infrared light is reflected by the wafer 7071 to the radiation rate pyrometer 7011, and the reflectivity of the wafer 7071 can be calculated through the received radiation quantity reflected by the wafer 7071 by the radiation rate pyrometer 7011.
As shown in fig. 8 and 9, the auxiliary device 9 includes a plurality of infrared thermometer through holes 91, the plurality of infrared thermometer through holes 91 are uniformly distributed on the surface of the reflecting plate 8, inner walls of the plurality of infrared thermometer through holes 91 are respectively in sliding connection with the pyrometer body 7010, three crystal dome needle through holes 92 are formed in the surface of the reflecting plate 8, inner walls of the three crystal dome needle through holes 92 are all in sliding penetration with crystal, a dielectric reflecting film layer 81, a metal reflecting film layer 82 and a base material 83 are sequentially arranged on the surface of the reflecting plate 8, one side of the dielectric reflecting film layer 81 is adhered with the metal reflecting film layer 82, one side of the metal reflecting film layer 82, far from the dielectric reflecting film layer 81, is adhered with the base material 83, the metal reflecting film layer 82 is a chemical nickel-phosphorus plating layer, the dielectric reflecting layer is a multilayer dielectric film plating layer, and the base material 83 is an aluminum alloy material.
The whole auxiliary device 9 has the advantages that the temperature of the wafer 7071 is measured through the through hole, the temperature measuring range covers the surface of the wafer 7071, the ejector pin of the wafer 7071 lifts the wafer 7071 through the through hole, the number of dielectric film layers required to be plated is reduced, the hardness, the bonding strength and the wear resistance and the corrosion resistance of the nickel-phosphorus layer are high, compared with the method of directly plating the dielectric film on the aluminum alloy substrate, the bonding strength of the film layer is enhanced, meanwhile, due to the stability, the penetration phenomenon of the film layer and the substrate caused by long-term high-temperature use can be prevented, and the film layer can be an effective bonding layer and a blocking layer between the dielectric film and the aluminum alloy substrate.
As shown in fig. 10 and 11, the fixing device 5 includes a plurality of fixing columns 51, the fixing columns 51 are fixedly connected with the surface of the base 1, the arc surface of the fixing columns 51 is slidably connected with a fixing frame 52, two sides of one end of the fixing frame 52, which is close to a positioning frame 708, are rotatably connected with a positioning frame 54, the surface of the positioning frame 54 is abutted to the arc surface of the positioning frame 708, the arc surface of the positioning frame 54 is sleeved with a coil spring 55, two ends of the coil spring 55 are fixedly connected with the positioning frame 54, the arc surface of the fixing columns 51 is in threaded connection with a rotating shaft 53, the bottom end of the rotating shaft 53 is abutted to the surface of the fixing frame 52, the bottom end of the rotating shaft 53 is rotatably connected with a pressing gasket 56, a limiting groove 57 is formed in the position of the surface of the fixing frame 52, and the inner wall of the limiting groove 57 is abutted to the surface of the pressing gasket 56.
The whole fixing device 5 has the advantages that the fixing column 51 on the base 1 is limited, the rotating shaft 53 on the fixing column 51 is rotated, the position of the sliding fixing frame 52 on the fixing column 51 is limited, the positioning frame 54 rotating on the fixing frame 52 is utilized, the positioning frame 708 is extruded and fixed by the whole positioning frame 54 through the torsion force generated by the coil spring 55 on the positioning frame 54, the fixing and limiting of the position of the whole positioning frame 708 are facilitated, when the whole rotating shaft 53 rotates, the whole rotating shaft 53 can be protected through the extrusion gasket 56 rotating at the bottom end of the rotating shaft 53, and the position of the extrusion gasket 56 can be fixed and limited through the limiting groove 57 on the fixing frame 52.
In embodiment 2, the whole working principle of the device is that in the manufacturing process of the semiconductor wafer 7071, a rapid heat treatment process is required to be performed on the wafer 7071, at this time, a fixing frame 52 on the base 1 is used, the whole wafer 7071 is rapidly heated to a high temperature by an adjusting device 7 in the fixing frame 52, and the wafer 7071 is uniformly rotated, and then the radiation rate pyrometer 7011 and the pyrometer 7010 in the adjusting device 7 are used for mutual measurement, so that the measurement of the real radiation rate of the wafer 7071 is facilitated.
When the wafer 7071 in the fixed frame 52 is subjected to radiation measurement, the heating lamp body 701 on the vacuum cavity 705 is firstly used for heating and heating, then the quartz plate 703 is used for isolating the vacuum cavity 705, vacuum sealing of the vacuum cavity is achieved, the vacuum sealing device is installed in the heating lamp housing 6 and a corresponding hole, rapid heating and temperature control of the wafer 7071 are achieved, the radiation rate pyrometer 7011 is inserted into the boss 7072 at the bottom end of the fixed frame, the radiation rate pyrometer 7011 is used for transmitting infrared light to the measured wafer 7071, part of infrared light transmitted by the radiation rate pyrometer 7011 is absorbed by the wafer 7071, the other part of infrared light is reflected by the wafer 7071 to the radiation rate pyrometer 7011, the radiation rate pyrometer 7011 can calculate the reflectivity of the wafer 7071 through the received radiation quantity reflected by the wafer 7071, the sealing ring 704 between the quartz plate and the vacuum cavity 705, accordingly the vacuum sealing performance of the vacuum cavity is achieved, the whole motor 7092 is enabled to be provided with the radiation rate pyrometer 7011, the whole motor 7092 is enabled to rotate at a certain angle, the wafer 7071 is enabled to rotate at a certain angle, the edge of the wafer 7071 is supported by the wafer 7071, the wafer 7071 is enabled to rotate at a certain angle, the edge of the wafer 7093 is supported by the wafer 7071, the wafer 7071 is supported by the carrier 7093, and the carrier 7093 is enabled to rotate at a certain speed, and the edge is convenient to rotate, and the wafer 7093 is supported by the wafer 7093, and the carrier 7093 is rotated by the carrier is conveniently, and the carrier is rotated by the carrier 7093.
The infrared thermometer through holes 91 are arranged along the radius of the reflecting plate 8, the infrared thermometer can measure the temperature of the wafer 7071 through the through holes, the temperature measuring range covers the surface of the wafer 7071, the thimble of the wafer 7071 can lift the wafer 7071 through the through holes, the number of medium film layers required to be plated is reduced, the hardness of the nickel-phosphorus layer, the bonding strength and the wear-resistant corrosion resistance are higher, compared with the method of directly plating the medium film on an aluminum alloy substrate, the bonding strength of the film layer is enhanced, meanwhile, due to the stability, the penetration phenomenon of the film layer and the substrate which occur during long-term high-temperature use can be prevented, the film can become an effective bonding layer and a blocking layer between the medium film and the aluminum alloy substrate, the aluminum alloy surface is provided with pores after being processed, the existence of the pores can not obtain the required uniformity and the flatness requirement through the direct plating of the medium film, the nickel-phosphorus layer can be obtained through controlling the phosphorus content, the reflectivity of more than 95% after polishing can be realized, even higher, the high reflectivity of the film can also meet the high reflectivity of more than 2000nm, the high reflectivity of the film can be realized within the range of more than 700 nm, namely, the medium film with the high reflectivity is more than 700 nm, the bandwidth is more than 700 nm, the medium film is designed, and the medium film with the high reflectivity is more than 700 nm, and the required to be fully, the medium bandwidth is more high, and the medium is more high, the bandwidth is more than 700 nm, and has the bandwidth is more than the required, and is more than the bandwidth, and is more than 700, and can be more particularly, and can.
When the positioning frame 708 on the whole base 1 is used, in order to better extrude and limit the position of the whole positioning frame 708, at this time, through the fixing column 51 on the base 1, the rotating shaft 53 on the fixing column 51 is rotated, thereby limiting the position of the sliding fixing frame 52 on the fixing column 51, and then through the rotating positioning frame 54 on the fixing frame 52, the whole positioning frame 708 is extruded and fixed by the whole positioning frame 54 by using the torsion force generated by the coil spring 55 on the positioning frame 54, thereby being beneficial to fixing and limiting the position of the whole positioning frame 708, when the whole rotating shaft 53 rotates, the whole rotating shaft 53 can be protected by the extrusion gasket 56 rotating at the bottom end of the rotating shaft 53, and the position of the extrusion gasket 56 can be fixed and limited by the limiting groove 57 on the fixing frame 52.
The present invention is not limited to the above-mentioned embodiments, and any equivalent embodiments which can be changed or modified by the technical content disclosed above can be applied to other fields, but any simple modification, equivalent changes and modification made to the above-mentioned embodiments according to the technical substance of the present invention without departing from the technical content of the present invention still belong to the protection scope of the technical solution of the present invention.
Claims (6)
1. Temperature measuring device with reflecting means applied to an integrated circuit device, comprising a base (1), characterized in that: the upper end surface of the base (1) is fixedly connected with an operating frame (2), one end of the operating frame (2) is provided with a vacuum extraction opening (3), one end of the operating frame (2) away from the vacuum extraction opening is provided with a wafer transmission opening (4), the upper end of the operating frame (2) is provided with a heating lamp shell (6), the inside of the operating frame (2) is provided with a reflecting plate (8), the inner wall of the operating frame (2) is provided with an adjusting device (7), the surface of the reflecting plate (8) is provided with an auxiliary device (9), and the position of the base (1) corresponding to the positioning frame (708) is provided with a fixing device (5); the adjusting device (7) comprises a vacuum cavity (705), a reflecting component (707) and a supporting component (709); the vacuum cavity (705) is formed in the inner wall of the operation frame (2), the upper end of the vacuum cavity (705) is fixedly connected with the bottom end of the heating lamp shell (6), a plurality of connecting holes (702) are formed in the surface of the heating lamp shell (6), the plurality of connecting holes (702) are uniformly formed in the surface of the heating lamp shell (6), the plurality of connecting holes (702) are in a circular honeycomb shape, the heating lamp body (701) is fixedly connected to the bottom end of the inner wall of the heating lamp shell (6), the reflection annular plate (706) is fixedly connected to the circular arc surface of the inner wall of the vacuum cavity (705), the positioning frame (708) is fixedly connected to the inner wall of the reflection annular plate (706), and the boss (7072) is fixedly connected to the bottom end of the positioning frame (708); the upper end surface of the boss (7072) is fixedly connected with the reflecting plate (8), a plurality of heights Wen Jiti (7010) are slidably inserted into the surface of the boss (7072), and a radiation rate pyrometer (7011) is slidably inserted into one side, close to the height Wen Jiti (7010), of the surface of the boss (7072);
The fixing device (5) comprises a plurality of fixing columns (51), the fixing columns (51) are fixedly connected with the surface of the base (1), the arc surfaces of the fixing columns (51) are slidably connected with fixing frames (52), two sides of one end of each fixing frame (52) close to each locating frame (708) are rotatably connected with locating frames (54), the surfaces of the locating frames (54) are abutted against the arc surfaces of the locating frames (708), coil springs (55) are sleeved on the arc surfaces of the locating frames (54), two ends of each coil spring (55) are fixedly connected with the corresponding locating frame (54), rotating shafts (53) are connected with the arc surfaces of the fixing columns (51) in a threaded mode, and the bottom ends of the rotating shafts (53) are abutted against the surfaces of the fixing frames (52);
the bottom end of the rotating shaft (53) is rotationally connected with an extrusion gasket (56), a limiting groove (57) is formed in the surface of the fixed frame (52) corresponding to the extrusion gasket (56), and the inner wall of the limiting groove (57) is abutted against the surface of the extrusion gasket (56);
The support assembly (709) comprises a plurality of support columns (7091), the support columns (7091) are fixedly connected with the upper end surface of the magnetic suspension motor rotor (7073), the upper ends of the support columns (7091) are fixedly connected with the same support ring (7092), the upper end surface of the support ring (7092) is fixedly connected with an edge ring (7093), and the surface of the edge ring (7093) is abutted to a wafer body (7071); supporting and limiting are carried out through a supporting column and a supporting ring on a rotor of the magnetic suspension motor, and then supporting and fixing are carried out on a wafer body through an edge ring;
When radiation measurement is carried out on the wafer body in the fixed frame, heating is carried out through a heating lamp body on the vacuum cavity, then the vacuum cavity is isolated through a quartz plate, so that vacuum sealing of the vacuum cavity and rapid heating and temperature control of the wafer body are realized; a boss at the bottom end of the fixing frame is inserted with a radiance pyrometer, the radiance pyrometer emits infrared light to a wafer body to be measured, one part of the infrared light emitted by the radiance pyrometer is absorbed by the wafer body, the other part of the infrared light is reflected by the wafer body to the radiance pyrometer, and the radiance pyrometer calculates the reflectivity of the wafer body through the received radiance reflected by the wafer body; the vacuum sealing of the vacuum chamber is realized through a sealing ring between the quartz plate and the vacuum chamber, the whole reflection annular plate has an annular structure with a polished upper surface with a certain inclination angle, and the rapid heating of the wafer body is assisted; the rotor of the magnetic suspension motor is driven to rotate through the stator of the magnetic suspension motor, so that the support column, the support ring and the edge ring are driven to rotate, the edge ring is utilized to rotate along with the wafer body at a constant speed, and the temperature and the process uniformity of the wafer body are ensured.
2. A temperature measuring device having a reflecting member applied to an integrated circuit device according to claim 1, wherein: the arc surface of the quartz plate (703) is sleeved with a sealing ring (704), and the arc surface of the sealing ring (704) is abutted against the inner wall of the vacuum cavity (705).
3. A temperature measuring device having a reflecting member applied to an integrated circuit device according to claim 1, wherein: the section of the reflection annular plate (706) is arc-shaped with an inclination angle, and the section size of the reflection annular plate (706) is matched with the section size of the vacuum cavity (705).
4. A temperature measuring device having a reflecting member applied to an integrated circuit device according to claim 1, wherein: the arc surface of the positioning frame (708) is rotationally connected with a magnetic suspension motor stator (7074), and the position of the boss (7072) corresponding to the magnetic suspension motor stator (7074) is rotationally connected with a magnetic suspension motor rotor (7073).
5. A temperature measuring device having a reflecting member applied to an integrated circuit device according to claim 1, wherein: the auxiliary device (9) comprises a plurality of infrared thermometer through holes (91), the plurality of infrared thermometer through holes (91) are uniformly distributed on the surface of the reflecting plate (8), the inner walls of the plurality of infrared thermometer through holes (91) are respectively in sliding connection with the pyrometer body (7010), three crystal dome needle through holes (92) are formed in the surface of the reflecting plate (8), and the inner walls of the three crystal dome needle through holes (92) are all in sliding penetration with the wafer body (7071).
6. A temperature measuring device having a reflecting member applied to an integrated circuit device according to claim 1, wherein: the surface of the reflecting plate (8) is sequentially provided with a dielectric reflecting film layer (81), a metal reflecting film layer (82) and a base material (83), one side of the dielectric reflecting film layer (81) is adhered to the metal reflecting film layer (82), one side of the metal reflecting film layer (82) away from the dielectric reflecting film layer (81) is adhered to the base material (83), the metal reflecting film layer (82) is a chemical nickel-phosphorus plating layer, the dielectric reflecting layer is a multilayer dielectric film plating layer, and the base material (83) is made of aluminum alloy.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10233370A (en) * | 1997-02-20 | 1998-09-02 | Kokusai Electric Co Ltd | Heat treatment apparatus for semiconductor substrate |
| US5997175A (en) * | 1997-07-24 | 1999-12-07 | Steag Rtp Systems, Inc. | Method for determining the temperature of a semi-transparent radiating body |
| KR20050036305A (en) * | 2003-10-15 | 2005-04-20 | 삼성전자주식회사 | Rapid thermal processing apparatus |
| WO2013176453A1 (en) * | 2012-05-24 | 2013-11-28 | Ap Systems Inc. | Apparatus for substrate treatment and method for operating the same |
| CN115166881A (en) * | 2022-07-29 | 2022-10-11 | 北京北方华创微电子装备有限公司 | Reflection plate of semiconductor heat treatment equipment and semiconductor heat treatment equipment |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6839507B2 (en) * | 2002-10-07 | 2005-01-04 | Applied Materials, Inc. | Black reflector plate |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10233370A (en) * | 1997-02-20 | 1998-09-02 | Kokusai Electric Co Ltd | Heat treatment apparatus for semiconductor substrate |
| US5997175A (en) * | 1997-07-24 | 1999-12-07 | Steag Rtp Systems, Inc. | Method for determining the temperature of a semi-transparent radiating body |
| KR20050036305A (en) * | 2003-10-15 | 2005-04-20 | 삼성전자주식회사 | Rapid thermal processing apparatus |
| WO2013176453A1 (en) * | 2012-05-24 | 2013-11-28 | Ap Systems Inc. | Apparatus for substrate treatment and method for operating the same |
| CN115166881A (en) * | 2022-07-29 | 2022-10-11 | 北京北方华创微电子装备有限公司 | Reflection plate of semiconductor heat treatment equipment and semiconductor heat treatment equipment |
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