CN116536639A - 一种支撑柱及加热盘组件 - Google Patents
一种支撑柱及加热盘组件 Download PDFInfo
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Abstract
本发明涉及半导体制造设备技术领域,更具体的说,涉及一种用于加热盘的支撑柱以及用于半导体设备中的加热盘组件。本发明提供了一种用于加热盘的支撑柱,匹配安装在加热盘表面的配合孔内,用于支撑晶圆;所述支撑柱,包括外支撑衬套和内支撑柱:所述外支撑衬套与内支撑柱之间采用可拆卸方式配合连接。本发明提供的用于加热盘的支撑柱以及加热盘组件,可以调整支撑柱的总体高度,保证晶圆表面的平面度,使得晶圆在薄膜沉积工艺中的受热更加均匀,进而保证整个薄膜沉积的均匀性。
Description
技术领域
本发明涉及半导体制造设备技术领域,更具体的说,涉及一种用于加热盘的支撑柱以及用于半导体设备中的加热盘组件。
背景技术
薄膜沉积技术用于制造微电子器件的薄膜,在基板衬底上形成沉积物,常见的薄膜沉积技术包括物理气相沉积、化学气相沉积等技术。
在薄膜沉积设备中,加热盘用于对晶圆进行加热,以实现相应的薄膜沉积工艺。
图1和图2分别揭示了现有技术的薄膜沉积设备的加热盘及陶瓷柱安装示意图及放大示意图,如图1和图2所示,现有技术中通常在加热盘110的多个配合孔,配合孔上安装有多组陶瓷柱120。
陶瓷柱120用于支撑晶圆的表面,可以有效防止晶圆变形,使晶圆受热更加均匀,进而保证薄膜沉积的均匀性。
图3揭示了现有技术的薄膜沉积设备的陶瓷柱的示意图,如图3所示,现有技术中所使用陶瓷柱120为一次成型结构,多组陶瓷柱120的高度会有所差别,从而使得晶圆距离加热盘110表面的高度也会有所差别,造成晶圆表面温度差异,进而影响薄膜沉积效果。
另一方面,为了防止陶瓷柱120从加热盘110的配合孔中跳出,如图3所示,陶瓷柱120的圆周对称铣扁,这就造成了在薄膜沉积工艺过程中有杂质容易落入陶瓷柱120的扁平面与加热盘110的配合孔之间的缝隙,造成陶瓷柱120无法取出,更换困难。
发明内容
本发明的目的是提供一种支撑柱及对应的加热盘组件,解决现有技术的加热盘支撑晶圆时存在高度差导致晶圆受热不均匀的问题。
本发明的另一个目的是提供一种支撑柱及对应的加热盘组件,解决现有技术中用于加热盘的支撑柱难以进行更换的问题。
为了实现上述目的,本发明提供了一种用于加热盘的支撑柱,所述支撑柱,匹配安装在加热盘表面的配合孔内,用于支撑晶圆;
所述支撑柱,包括外支撑衬套和内支撑柱:
所述外支撑衬套,用于匹配安装在加热盘表面的配合孔内;
所述内支撑柱,用于支撑晶圆;
所述外支撑衬套与内支撑柱之间采用可拆卸方式配合连接。
在一实施例中,所述外支撑衬套与内支撑柱之间采用螺纹连接。
在一实施例中,所述外支撑衬套的外侧设置有轴肩法兰,用于覆盖加热盘配合孔。
在一实施例中,所述轴肩法兰的外径大于加热盘配合孔的内径。
在一实施例中,所述轴肩法兰的圆周对称加工两个扁平面。
在一实施例中,所述内支撑柱设置有中心孔:
所述中心孔,为通孔结构,将内支撑柱上下的气流导通。
在一实施例中,所述外支撑衬套与内支撑柱为陶瓷材料。
在一实施例中,所述可拆卸连接方式包括卡扣连接和铰链连接。
为了实现上述目的,本发明提供了一种用于半导体设备中的加热盘组件,其特征在于,包括加热盘和若干支撑柱:
所述加热盘表面设置有若干配合孔;
所述支撑柱,采用上述的支撑柱,匹配安装在配合孔内,用于支撑晶圆。
在一实施例中,所述配合孔为沉头孔。
本发明提供的一种用于加热盘的支撑柱以及加热盘组件,可以调整支撑柱的总体高度,保证晶圆表面的平面度,使得晶圆在薄膜沉积工艺中的受热更加均匀,进而保证整个薄膜沉积的均匀性。
本发明提出的一种用于加热盘的支撑柱以及加热盘组件,具体具有以下
有益效果:
1)通过外支撑衬套和内支撑柱之间的可拆卸连接,可调整支撑柱的总体高度,保证晶圆表面的平面度;
2)通过外支撑衬套的轴肩法兰将配合孔覆盖,可以防止杂质落入配合孔与陶瓷柱之间的间隙;
3)通过在内支撑柱设置中心孔,保证支撑柱上下通气,平衡压差,避免支撑柱跳出。
附图说明
本发明上述的以及其他的特征、性质和优势将通过下面结合附图和实施例的描述而变的更加明显,在附图中相同的附图标记始终表示相同的特征,其中:
图1揭示了现有技术的薄膜沉积设备的加热盘及陶瓷柱安装示意图;
图2揭示了现有技术的薄膜沉积设备的加热盘及陶瓷柱放大示意图;
图3揭示了现有技术的薄膜沉积设备的陶瓷柱的示意图;
图4a揭示了根据本发明一实施例的用于加热盘的陶瓷柱的立体示意图;
图4b揭示了根据本发明一实施例的用于加热盘的陶瓷柱的截面示意图;
图5揭示了现有技术的薄膜沉积设备的加热盘及陶瓷柱安装间隙示意图;
图6揭示了根据本发明一实施例的用于加热盘的陶瓷柱安装示意图;
图7揭示了根据本发明一实施例的用于半导体设备中的加热盘组件示意图。
图中各附图标记的含义如下:
110加热盘;
120陶瓷柱;
210加热盘;
220陶瓷柱;
221外陶瓷衬套;
222内陶瓷柱;
223轴肩法兰;
2231扁平面;
224中心孔。
具体实施方式
为了使本发明的目的、技术方案及优点更加清楚明白,以下结合附图及实施例,对本发明进行进一步详细说明。应当理解,此处所描述的具体实施例仅用以解释发明,并不用于限定发明。
在本说明书的描述中,参考术语“一个实施例”、“一些实施例”、“示例”、“具体示例”、或“一些示例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或者特点包含于本发明的至少一个实施例或示例中。在本说明书中,对上述术语的示意性表述不一定指的是相同的实施例或示例。而且,描述的具体特征、结构、材料或者特点可以在任何的一个或多个实施例或示例中以合适的方式结合。
需要说明的是,下述实施例中所提供的图示仅以示意方式说明本发明的基本构想,虽图示中仅显示与本发明中有关的组件而非按照实际实施时的组件数目、形状及尺寸绘制,其实际实施时各组件的形态、数量及比例可为一种随意的改变,且其组件布局形态也可能更为复杂。
本发明提出的一种用于加热盘的支撑柱,匹配安装在加热盘表面的配合孔内,用于支撑晶圆;
所述支撑柱,包括外支撑衬套和内支撑柱:
所述外支撑衬套与内支撑柱之间采用可拆卸方式配合连接。
支撑柱的材料一般可以为陶瓷材料,但是本发明的支撑柱并不限制于其他材料。
图4a揭示了根据本发明一实施例的用于加热盘的陶瓷柱的立体示意图,图4b揭示了根据本发明一实施例的用于加热盘的陶瓷柱的截面示意图,如图4a和图4b所示的实施例中,外支撑衬套与内支撑柱均为陶瓷材料:
支撑柱为陶瓷柱220;
外支撑衬套为外陶瓷衬套221,用于安装在加热盘表面的配合孔内;
内支撑柱为内陶瓷柱222,用于支撑晶圆。
如图4a和图4b所示,本发明提出的用于加热盘的陶瓷柱220,包括外陶瓷衬套221和内陶瓷柱222,陶瓷柱220为外陶瓷衬套221与内陶瓷柱222配合的双层结构。
现有技术方案中,陶瓷柱为一体结构,受加工误差影响,不同陶瓷柱之间高度存在差异且不可避免。
本发明提出的陶瓷柱220中,外陶瓷衬套221与内陶瓷柱222之间采用可拆卸方式配合连接,从而可以调整陶瓷柱220的总体高度。
可拆卸连接方式包括但不限于螺纹连接、卡扣连接和铰链连接。
更进一步的,本实施例中,内陶瓷柱222与外陶瓷衬套221之间采用螺纹配合连接,可调整陶瓷柱220的总体高度。
本发明提出的陶瓷柱220,由于陶瓷柱220的总体高度可调,进而可以消除不同陶瓷柱220之间的高度差,保证晶圆表面的平面度,使得晶圆受热更加均匀,进而保证整个薄膜沉积均匀性。
如图4a和图4b所示的实施例中,陶瓷柱220的外陶瓷衬套221,外侧设置有轴肩法兰223,用于覆盖加热盘配合孔。
更进一步的,本实施例中,轴肩法兰223的外径大于加热盘配合孔的内径,从而,轴肩法兰223可以覆盖住加热盘210的配合孔,防止杂质落入加热盘210的配合孔与陶瓷柱220之间的间隙。
更进一步的,轴肩法兰223的圆周对称加工两个扁平面2231。
在本实施例中,轴肩法兰223的圆周对称铣扁,加工两个平行面,便于陶瓷柱的放入与取出。
图5揭示了现有技术的薄膜沉积设备的加热盘及陶瓷柱安装间隙示意图,如图5所示的现有技术方案中,陶瓷柱120为一次成型结构,并且陶瓷柱120的圆周对称铣扁。
因此,陶瓷柱120与加热盘110安装后,陶瓷柱120与加热盘110的配合孔之间存在间隙,在工艺过程中杂质会掉落进入间隙,这样在一段时间过后,会造成陶瓷柱120在配合孔中无法取出,陶瓷柱120更换困难。
图6揭示了根据本发明一实施例的用于加热盘的陶瓷柱安装示意图,如图6所示,本发明的提出的陶瓷柱220,安装至加热盘210的配合孔之后,轴肩法兰223可以覆盖住加热盘210的配合孔,杂质无法落入加热盘210的配合孔与陶瓷柱220之间的间隙,不会造成陶瓷柱220卡塞,陶瓷柱220安装与更换更加方便。
如图6所示,本实施例中,陶瓷柱220的内陶瓷柱222设置有中心孔224:
中心孔224为通孔结构,将内陶瓷柱222上下的气流导通,保证陶瓷柱上下通气,平衡压差,避免陶瓷柱跳出。
作为较佳实施例,中心孔224的设置位置为内陶瓷柱222的中心位置。
在其他实施例中,中心孔224的设置位置也可以在内陶瓷柱222的其他非中心位置。
作为较佳实施例,中心孔224的数量为1个。
在其他实施例中,中心孔224的数量也可以多于1个。
本发明提供的一种用于半导体设备中的加热盘组件,包括加热盘和若干支撑柱:
所述加热盘表面设置有若干配合孔;
所述支撑柱,匹配安装在配合孔内,用于支撑晶圆。
图7揭示了根据本发明一实施例的用于半导体设备中的加热盘组件示意图,如图7所示,如图7所示,本发明提出的用于半导体设备中的加热盘组件,包括加热盘210和若干支撑柱:
所述加热盘210表面设置有若干配合孔;
所述支撑柱,采用如图4a、图4b和图6所示的陶瓷柱220,匹配安装在配合孔内,用于支撑晶圆。
在图7所示的实施例中,配合孔为沉头孔。
加热盘210表面设置的配合孔并不是通孔,而是由加热盘表面向内部所加工的盲孔,用于安装连接部件,即陶瓷柱220的外陶瓷衬套221。
本发明提出的一种用于加热盘的支撑柱以及加热盘组件,具体具有以下
有益效果:
1)通过外支撑衬套和内支撑柱之间的可拆卸连接,可调整支撑柱的总体高度,保证晶圆表面的平面度;
2)通过外支撑衬套的轴肩法兰将配合孔覆盖,可以防止杂质落入配合孔与陶瓷柱之间的间隙;
3)通过在内支撑柱设置中心孔,保证支撑柱上下通气,平衡压差,避免支撑柱跳出。
尽管为使解释简单化将上述方法图示并描述为一系列动作,但是应理解并领会,这些方法不受动作的次序所限,因为根据一个或多个实施例,一些动作可按不同次序发生和/或与来自本文中图示和描述或本文中未图示和描述但本领域技术人员可以理解的其他动作并发地发生。
如本申请和权利要求书中所示,除非上下文明确提示例外情形,“一”、“一个”、“一种”和/或“该”等词并非特指单数,也可包括复数。一般说来,术语“包括”与“包含”仅提示包括已明确标识的步骤和元素,而这些步骤和元素不构成一个排它性的罗列,方法或者设备也可能包含其他的步骤或元素。
在本发明的描述中,需要说明的是,术语“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述本发明和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本发明的限制。
在本发明中,除非另有明确的规定和限定,第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触,也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且,第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方,或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方,或仅仅表示第一特征水平高度小于第二特征。
在本发明的描述中,需要说明的是,除非另有明确的规定和限定,术语“安装”、“相连”、“连接”应做广义理解,例如,可以是固定连接,也可以是可拆卸连接,或一体地连接;可以是直接相连,也可以通过中间媒介间接相连,可以是两个元件内部的连同。对于本领域的普通技术人员而言,可以具体情况理解上述术语在本发明中的具体含义。
上述实施例是提供给熟悉本领域内的人员来实现或使用本发明的,熟悉本领域的人员可在不脱离本发明的发明思想的情况下,对上述实施例做出种种修改或变化,因而本发明的保护范围并不被上述实施例所限,而应该是符合权利要求书提到的创新性特征的最大范围。
Claims (10)
1.一种用于加热盘的支撑柱,其特征在于,所述支撑柱,包括外支撑衬套和内支撑柱:
所述外支撑衬套,用于匹配安装在加热盘表面的配合孔内;
所述内支撑柱,用于支撑晶圆;
所述外支撑衬套与内支撑柱之间采用可拆卸方式配合连接。
2.根据权利要求1所述的用于加热盘的支撑柱,其特征在于,所述外支撑衬套与内支撑柱之间采用螺纹连接。
3.根据权利要求1所述的用于加热盘的支撑柱,其特征在于,所述外支撑衬套的外侧设置有轴肩法兰,用于覆盖加热盘配合孔。
4.根据权利要求3所述的用于加热盘的支撑柱,其特征在于,所述轴肩法兰的外径大于加热盘配合孔的内径。
5.根据权利要求3所述的用于加热盘的支撑柱,其特征在于,所述轴肩法兰的圆周对称设置两个扁平面。
6.根据权利要求1所述的用于加热盘的支撑柱,其特征在于,所述内支撑柱设置有中心孔:
所述中心孔,为通孔结构,将内支撑柱上下的气流导通。
7.根据权利要求1所述的用于加热盘的支撑柱,其特征在于,所述外支撑衬套与内支撑柱为陶瓷材料。
8.根据权利要求1所述的用于加热盘的支撑柱,其特征在于,所述可拆卸连接方式包括卡扣连接和铰链连接。
9.一种用于半导体设备中的加热盘组件,其特征在于,包括加热盘和若干支撑柱:
所述加热盘表面设置有若干配合孔;
所述支撑柱,采用如权利要求1至权利要求8中任一项所述的支撑柱,匹配安装在配合孔内,用于支撑晶圆。
10.根据权利要求9所述的用于半导体设备中的加热盘组件,其特征在于,所述配合孔为沉头孔。
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KR19990024881U (ko) * | 1997-12-15 | 1999-07-05 | 구본준 | 웨이퍼 지지장치 |
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CN107749407A (zh) * | 2017-09-22 | 2018-03-02 | 沈阳拓荆科技有限公司 | 晶圆承载盘及其支撑结构 |
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KR19990024881U (ko) * | 1997-12-15 | 1999-07-05 | 구본준 | 웨이퍼 지지장치 |
CN106298623A (zh) * | 2015-06-29 | 2017-01-04 | 沈阳拓荆科技有限公司 | 一种可调节高度的晶圆承托机构 |
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