CN218827755U - High-selectivity planar dual-cavity dual-mode patch filter - Google Patents

High-selectivity planar dual-cavity dual-mode patch filter Download PDF

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CN218827755U
CN218827755U CN202223156383.0U CN202223156383U CN218827755U CN 218827755 U CN218827755 U CN 218827755U CN 202223156383 U CN202223156383 U CN 202223156383U CN 218827755 U CN218827755 U CN 218827755U
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dual
resonator
cavity
mode
patch
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刘庆
钱行
麻本华
周东方
张德伟
刘起坤
安娜
王洋洋
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Information Engineering University of PLA Strategic Support Force
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Information Engineering University of PLA Strategic Support Force
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    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
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Abstract

The utility model relates to a high selectivity plane two-chamber bimodulus paster filter, including the filter body, the filter body includes first bimodulus single-chamber unit and second bimodulus single-chamber unit, is provided with lambda g/4 strip line between first bimodulus single-chamber unit and the second bimodulus single-chamber unit; the first double-mode single-cavity unit and the second double-mode single-cavity unit are both of a patch structure, and the patch structure comprises a patch etched with a crossed slot line disturbance structure; the first double-mode single-cavity unit comprises a first resonator and a second resonator, and the second double-mode single-cavity unit comprises a third resonator and a fourth resonator. The utility model discloses a single chamber bimodulus box type topological structure possesses a plurality of coupling paths, has introduced 4 finite frequency transmission zeros of distribution in the passband both sides, has realized the high selectivity. Meanwhile, the design of a patch structure is adopted, so that the band-pass filter body has high power capacity, and the band-pass filter can be suitable for integration of most active devices.

Description

High-selectivity planar dual-cavity dual-mode patch filter
Technical Field
The utility model relates to an electromagnetic field and microwave technical field, concretely relates to high selectivity plane two-chamber bimodulus paster wave filter.
Background
With the continuous and rapid development of scientific technology, the demands of the fields of military affairs, commerce, civilian life and the like on wireless communication systems (including 5G/E5G) are more and more demanding. The filter body is used as a core device of a wireless communication system, and besides the requirements of allocating spectrum resources, filtering useless signals and suppressing interference signals are met, in the face of the high-speed development requirements of miniaturization, high power capacity, high selection and low cost of the wireless communication system, stricter requirements are provided for the aspects of physical topological structure, comprehensive design method, design and production process and efficiency, device size, cost and the like of the filter body. Such as "a dielectric resonant structure, a filter body and a communication device" with publication No. CN 217719920U. Therefore, in the face of increasingly cluttered electromagnetic signal environments and increasingly tense spectrum allocation resources, it is extremely necessary to develop a filter body with high selectivity, high power capacity, miniaturization, and low cost to adapt to a wireless communication system developing at a high speed.
In the prior art, the filter body designed by adopting the substrate integrated waveguide structure can have a higher quality factor, but in the current 5G-Sub 6 stage application, the problem of overlarge size exists due to the cut-off frequency. The microwave filter body has the advantages of small size, flexible design and the like, but the power capacity of the microwave filter body is insufficient, so that the microwave filter body is not beneficial to the power requirement of a wireless communication system.
There is a need for a filter device that is small, highly selective, has a large power capacity and low radiation loss.
Disclosure of Invention
The utility model discloses a solve and have the bandwidth narrower, the selectivity is poor, bulky and the high problem of radiation loss at 5G-Sub 6 stage current filter body, provide a high selectivity plane two-chamber bimodulus paster filter, adopt two-chamber bimodulus paster structural design to go out fourth order filter body, can effectually reduce the size of device, realize miniaturized purpose. A single-cavity dual-mode box type topological structure is adopted, a plurality of coupling paths are provided, 4 limited frequency transmission zeros distributed on two sides of a passband are introduced, and high selectivity is achieved. Meanwhile, the design of a patch structure is adopted, so that the band-pass filter body has high power capacity, and the band-pass filter can be suitable for integration of most active devices.
In order to achieve the above object, the utility model provides a high selectivity plane two-chamber bimodulus patch filter, including information source feeder, load feeder and filter body, filter body one end is connected with the information source through the information source feeder, the other end is connected with the load through the load feeder, the filter body includes first bimodulus single-chamber unit and second bimodulus single-chamber unit, is provided with lambdag/4 strip line between first bimodulus single-chamber unit and the second bimodulus single-chamber unit; the first double-mode single-cavity unit and the second double-mode single-cavity unit are both patch structures, and each patch structure comprises a patch etched with a cross slot line disturbance structure;
the first double-mode single-cavity unit comprises a first resonator and a second resonator, and the second double-mode single-cavity unit comprises a third resonator and a fourth resonator.
Where λ g denotes a waveguide wavelength.
Specifically, the band-pass filter body comprises two dual-mode single-cavity patches and lambda g The/4 strip line, the SIW electric wall, the information source feeder line and the load feeder line are formed, and the whole structure is symmetrical.
The four resonators are composed of two double-cavity bimodule patches, wherein each patch adopts a cross slot line perturbation structure and has a split harmonicEffect of vibration frequency, resonators operating in TE respectively 100 And TE 010 Mode(s).
Further, the filter body is provided with a main coupling path and a cross coupling path, the main coupling path comprises that the source feeder line is coupled with a first resonator and a second resonator simultaneously, the first resonator and the second resonator are both coupled with a lambdag/4 strip line, the lambdag/4 strip line is also coupled with a third resonator and a fourth resonator simultaneously, and the third resonator and the fourth resonator are both coupled with a load feeder line;
the cross coupling path comprises an information source feeder line coupling lambada g/4 strip line and a lambada g/4 strip line coupling load feeder line.
Furthermore, the filter body further comprises an upper metal plate, a middle medium plate and a bottom metal plate, the upper metal plate is also provided with an SIW electric wall, and the SIW electric wall is respectively arranged around the first double-mode single-cavity unit and the second double-mode single-cavity unit;
the upper metal plate and the bottom metal plate sandwich the middle medium plate.
The filter body is of a sandwich structure, and the filter body is manufactured by adopting a single-layer PCB printing technology in production. The intermediate dielectric plate can be realized only by using a common dielectric substrate, and is more universally suitable for various application scenes of a microwave working frequency band, so that the requirements of a miniaturized, low-cost and wide-range wireless radio frequency system can be met. Has higher market application value.
The SIW structure can be regarded as an ideal electric wall, and the radiation loss problem of the patch filter body can be effectively reduced.
Further, the source feeder and the load feeder include microstrip lines with impedance of 50 Ω.
The microstrip line with the impedance of 50 omega is an international standard feeder line, and can be conveniently interconnected and integrated with other elements.
Further, the lambda g/4 strip line is of a zigzag folded structure.
The lambdag/4 strip line is integrally folded and is connected with the first double-mode single-cavity unit and the second double-mode single-cavity unit, so that the coupling strength of the first double-mode single-cavity unit and the second double-mode single-cavity unit can be effectively increased, the bandwidth of the band-pass filter body can be widened, and meanwhile, the folded design can effectively reduce the size, so that the whole device tends to be miniaturized; the width and the length of the lambdag/4 strip line are finely adjusted, so that the coupling strength or the ratio between the first dual-mode single-cavity unit and the second dual-mode single-cavity unit can be controlled, and the adjustment and the control of the passband bandwidth or the frequency position of a transmission zero point of limited frequency are realized.
Through the technical scheme, the beneficial effects of the utility model are that:
1. the utility model discloses a bimodulus two-chamber paster structural design, the degenerate mode of the alternately slotline disturbance bimodulus paster of etching makes its design that can be used to the wave filter. In physical characteristics, a four-order filter body is designed by adopting two patch cavities, so that the size of the device can be effectively reduced, and the miniaturization aim is realized. Meanwhile, the design of a patch structure is adopted, so that the band-pass filter body has high power capacity, and the band-pass filter can be suitable for integration of most active devices.
2. The structure that a dual-mode dual-cavity resonance structure of a first dual-mode single-cavity unit and a second dual-mode single-cavity unit is combined with an information source feeder line and a load feeder line is adopted, 4 limited frequency transmission zeros are introduced into a fourth-order filter body, and two limited frequency transmission zeros are distributed on two sides of a pass band respectively. The index that N (N is more than or equal to 2) finite frequency transmission zeros are introduced into the N-order filter body is realized, and the high selectivity and the sideband suppression capability of the band-pass filter body are effectively improved.
3. In the prior art, window gap coupling is generally adopted for coupling among patch cavities, and due to the fact that the edge current density of a patch resonator is low and the coupling is weak, the narrow bandwidth of a filter body is achieved, and the application range of the filter body is limited. The utility model adopts the lambda g The/4 strip line is directly connected with the two dual-mode patch cavities, and lambda is found by utilizing g The/4 strip line has the characteristic of weak coupling, effectively increases the coupling strength of the two dual-mode patch resonators under the condition of not influencing the resonant frequency of the resonators, and can effectively widen the passband bandwidth. Meanwhile, the lambda g/4 strip line adopts a folding structure design and can be fedThe device volume is reduced. The width and the length of the lambda g/4 strip line are finely adjusted to realize the fine adjustment of the passband bandwidth and the transmission zero position of the band-pass filter body, so that high selectivity is realized.
4. The utility model discloses a set up the SIW electric wall around first two mould single chamber units and the two mould single chamber units of second, the SIW electric wall is in the utility model discloses well visual electric wall for the ideal, effectual reduction paster syntonizer electromagnetic energy radiation is revealed to effectively solve the high radiation loss problem of paster filter body.
5. The utility model discloses an information source feeder and load feeder adopt including impedance for 50 omega's microstrip line, and wave filter body structure adopts planar structure, and is integrated with other device interconnections more easily.
Drawings
Fig. 1 is a schematic structural diagram of a high-selectivity planar dual-cavity dual-mode patch filter according to the present invention;
fig. 2 is a schematic diagram of a three-dimensional structure of a high-selectivity planar dual-cavity dual-mode patch filter according to the present invention;
fig. 3 is a schematic diagram of a coupling topology of a high-selectivity planar dual-cavity dual-mode patch filter according to the present invention;
fig. 4 is a parameter response curve of a dual-cavity dual-mode patch filter according to an embodiment of the present invention;
fig. 5 is an exemplary diagram of an adjustable transmission zero of the limited frequency of the dual-cavity dual-mode patch filter according to an embodiment of the present invention;
fig. 6 is an exemplary diagram of adjustable bandwidth of a bandpass filter of a dual-cavity dual-mode patch filter according to an embodiment of the present invention.
The reference numbers in the figures are: the feed line structure comprises a source feed line 1, a load feed line 2, a first double-mode single cavity 3, a second double-mode single cavity 4, a lambda g/4 strip line 5, a first resonator 6, a second resonator 7, a third resonator 8, a fourth resonator 9, an upper metal plate 10, a middle dielectric plate 11, a bottom metal plate 12 and an SIW electric wall 13.
Detailed Description
The present invention will be further described with reference to the accompanying drawings and detailed description:
example 1
As shown in fig. 1 to 3, a high-selectivity planar dual-cavity dual-mode patch filter includes an information source feeder 1, a load feeder 2 and a filter body, one end of the filter body is connected with an information source through the information source feeder 1, and the other end of the filter body is connected with a load through the load feeder 2, and the filter body includes a first dual-mode single-cavity unit 3 and a second dual-mode single-cavity unit 4, and a λ g/4 strip line 5 is arranged between the first dual-mode single-cavity unit 3 and the second dual-mode single-cavity unit 4; the first double-mode single-cavity unit 3 and the second double-mode single-cavity unit 4 are both patch structures, and the patch structures are disturbance patch structures etched with crossed slot lines;
the first double-mode single-cavity unit 3 comprises a first resonator 6 and a second resonator 7, and the second double-mode single-cavity unit 4 comprises a third resonator 8 and a fourth resonator 9.
As shown in fig. 1, the filter body is preferably provided with a main coupling path and a cross coupling path, the main coupling path includes that the source feeder 1 is coupled with the first resonator 6 and the second resonator 7 at the same time, the first resonator 6 and the second resonator 7 are both coupled with the lambdag/4 strip line 5, the lambdag/4 strip line 5 is also coupled with the third resonator 8 and the fourth resonator 9 at the same time, and the third resonator 8 and the fourth resonator 9 are both coupled with the load feeder 2;
the cross coupling path comprises an information source feeder line 1 coupled with a lambda g/4 strip line 5, and the lambda g/4 strip line 5 coupled with a load feeder line 2.
In fig. 1, the solid lines represent the main coupling paths and the broken lines represent the cross-coupling paths.
As shown in fig. 2, the filter body further includes an upper metal plate 10, a middle dielectric plate 11 and a bottom metal plate 12, the upper metal plate 10 is further provided with an SIW electrical wall 13, and the SIW electrical wall 13 is respectively arranged around the first dual-mode single-cavity unit 3 and the second dual-mode single-cavity unit 4;
the upper metal plate 10 and the lower metal plate 12 sandwich the middle dielectric plate 11.
Preferably, the source feeder 1 and the load feeder 2 include microstrip lines with impedance of 50 Ω.
Preferably, the λ g/4 strip line 5 has a zigzag folded structure.
In order to verify the performance of the above-mentioned high-selectivity planar dual-cavity dual-mode patch filter (hereinafter referred to as filter), the following experiment was performed:
the parameters of the filter are as follows, the filter comprises a double-mode double-cavity patch, an information source feeder 1, a load feeder 2, a lambdag/4 strip line 5 and an SIW electric wall 13. Preferably, the dielectric substrate adopts Rogers5880, the relative dielectric constant is 2.2, the thickness is 0.508 mm,
in this experiment, the overall size of the filter was as shown in FIG. 3L=77.5 mm，W=40 mm; the width of the source feeder 1 and the load feeder 2W 0 =1.54 mm; the SIW electrical wall 13 has a metal via diameter ofD=0.8 mm; the etched trench line size in the dual-mode patch isW 1 =0.3 mm，L 1 =24.35 mm，L 2 =22.00 mm；λ g /4 the width of the strip 5 isW 2 =0.56 mm。
Fig. 4 shows the simulation results of the above filter. As can be seen from the filter parameter curve, the center frequency is 2.4GHz, the in-band insertion loss is 1.2dB, the in-band reflection loss is about-20 dB, and the bandwidth of-3 dB is 170 MHz (relative bandwidth is 7.1%). The frequency locations of the four finite frequency transmission zeroes are about 2.03 GHz, 2.17 GHz, 2.70 GHz, and 2.85GHz. The filter S parameter diagram directly indicates a highly selective filtering characteristic.
Fig. 5 shows an example of the adjustment and control of the transmission zero of the limited frequency of the filter. As can be seen from FIG. 5, by controlling λ g The vector length of the bar line 5 is controlled to regulate and control the positions of finite frequency transmission zeros on two sides, so that the high selectivity of the filter is further improved.
Fig. 6 is an example of the bandwidth adjustability of the filter described above. By regulating lambda g The width of the strip line 5 is used for regulating and controlling the coupling strength between the first double-mode single-cavity unit 3 and the second double-mode single-cavity unit 4, so that the passband bandwidth of the filter is regulated and controlled under the condition that the patch resonator is not changed, and the bandwidth is controllable and adjustable. So that the high selectivity of the filter is again improved.
The above-mentioned embodiments are only preferred embodiments of the present invention, and are not intended to limit the scope of the present invention, so that equivalent changes or modifications made by the structure, characteristics and principles of the present invention should be included in the claims of the present invention.

Claims (5)

1. A high-selectivity plane dual-cavity dual-mode patch filter comprises an information source feeder (1), a load feeder (2) and a filter body, wherein one end of the filter body is connected with an information source through the information source feeder (1), and the other end of the filter body is connected with a load through the load feeder (2), the high-selectivity plane dual-cavity dual-mode patch filter is characterized in that the filter body comprises a first dual-mode single-cavity unit (3) and a second dual-mode single-cavity unit (4), and a lambdag/4 strip line (5) is arranged between the first dual-mode single-cavity unit (3) and the second dual-mode single-cavity unit (4); the first double-mode single-cavity unit (3) and the second double-mode single-cavity unit (4) are both patch structures, and each patch structure comprises a patch etched with a cross slot line disturbance structure;
the first double-mode single-cavity unit (3) comprises a first resonator (6) and a second resonator (7), and the second double-mode single-cavity unit (4) comprises a third resonator (8) and a fourth resonator (9).
2. A highly selective planar dual-cavity dual-mode patch filter according to claim 1, wherein the filter body is provided with a main coupling path and a cross coupling path, the main coupling path comprises that the source feed line (1) is coupled with a first resonator (6) and a second resonator (7) simultaneously, the first resonator (6) and the second resonator (7) are coupled with a λ g/4 strip line (5), the λ g/4 strip line (5) is also coupled with a third resonator (8) and a fourth resonator (9) simultaneously, and the third resonator (8) and the fourth resonator (9) are coupled with a load feed line (2);
the cross coupling path comprises an information source feeder line (1) coupled with a lambda g/4 strip line (5), and the lambda g/4 strip line (5) coupled with a load feeder line (2).
3. The high-selectivity planar dual-cavity dual-mode patch filter according to claim 1, wherein the filter body further comprises an upper metal plate (10), a middle dielectric plate (11) and a bottom metal plate (12), the upper metal plate (10) is further provided with an SIW electric wall (13), and the SIW electric wall (13) is respectively arranged around the first dual-mode single-cavity unit (3) and the second dual-mode single-cavity unit (4);
the upper layer metal plate (10) and the bottom layer metal plate (12) sandwich the middle medium plate (11).
4. The planar dual-cavity dual-mode patch filter with high selectivity as claimed in claim 1, wherein the source feeder (1) and the load feeder (2) each comprise a microstrip line with 50 Ω impedance.
5. A highly selective planar dual-cavity dual-mode patch filter as claimed in claim 1, wherein said λ g/4 strip lines (5) are in a zigzag folded configuration.
CN202223156383.0U 2022-11-28 2022-11-28 High-selectivity planar dual-cavity dual-mode patch filter Active CN218827755U (en)

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