CN115873509A - Alkali polishing additive and polishing method for high-flatness silicon wafer - Google Patents
Alkali polishing additive and polishing method for high-flatness silicon wafer Download PDFInfo
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- CN115873509A CN115873509A CN202211480497.2A CN202211480497A CN115873509A CN 115873509 A CN115873509 A CN 115873509A CN 202211480497 A CN202211480497 A CN 202211480497A CN 115873509 A CN115873509 A CN 115873509A
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- 238000005498 polishing Methods 0.000 title claims abstract description 67
- 239000003513 alkali Substances 0.000 title claims abstract description 49
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 48
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 48
- 239000010703 silicon Substances 0.000 title claims abstract description 48
- 239000000654 additive Substances 0.000 title claims abstract description 42
- 230000000996 additive effect Effects 0.000 title claims abstract description 41
- 238000000034 method Methods 0.000 title abstract description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 21
- 230000007797 corrosion Effects 0.000 claims abstract description 12
- 238000005260 corrosion Methods 0.000 claims abstract description 12
- 238000007517 polishing process Methods 0.000 claims abstract description 12
- 239000002518 antifoaming agent Substances 0.000 claims abstract description 11
- 239000007809 chemical reaction catalyst Substances 0.000 claims abstract description 11
- 239000008139 complexing agent Substances 0.000 claims abstract description 11
- 239000002455 scale inhibitor Substances 0.000 claims abstract description 11
- 239000000080 wetting agent Substances 0.000 claims abstract description 10
- 239000008367 deionised water Substances 0.000 claims abstract description 9
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 9
- 239000002253 acid Substances 0.000 claims abstract description 6
- 235000012431 wafers Nutrition 0.000 claims description 44
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical group [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 33
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 claims description 10
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 6
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 claims description 6
- 238000002156 mixing Methods 0.000 claims description 6
- CMGDVUCDZOBDNL-UHFFFAOYSA-N 4-methyl-2h-benzotriazole Chemical compound CC1=CC=CC2=NNN=C12 CMGDVUCDZOBDNL-UHFFFAOYSA-N 0.000 claims description 5
- 235000010987 pectin Nutrition 0.000 claims description 5
- 239000001814 pectin Substances 0.000 claims description 5
- 229920001277 pectin Polymers 0.000 claims description 5
- 229920000036 polyvinylpyrrolidone Polymers 0.000 claims description 5
- 239000001267 polyvinylpyrrolidone Substances 0.000 claims description 5
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 claims description 5
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 claims description 3
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims description 3
- 229920002472 Starch Polymers 0.000 claims description 3
- 229910001870 ammonium persulfate Inorganic materials 0.000 claims description 3
- 229920001577 copolymer Polymers 0.000 claims description 3
- 229960005102 foscarnet Drugs 0.000 claims description 3
- 239000008103 glucose Substances 0.000 claims description 3
- 235000001727 glucose Nutrition 0.000 claims description 3
- ZJAOAACCNHFJAH-UHFFFAOYSA-N hydroxycarbonylphosphonic acid Natural products OC(=O)P(O)(O)=O ZJAOAACCNHFJAH-UHFFFAOYSA-N 0.000 claims description 3
- 229920002401 polyacrylamide Polymers 0.000 claims description 3
- -1 polyoxyethylene Polymers 0.000 claims description 3
- ZAWGLAXBGYSUHN-UHFFFAOYSA-M sodium;2-[bis(carboxymethyl)amino]acetate Chemical compound [Na+].OC(=O)CN(CC(O)=O)CC([O-])=O ZAWGLAXBGYSUHN-UHFFFAOYSA-M 0.000 claims description 3
- 239000008107 starch Substances 0.000 claims description 3
- 235000019698 starch Nutrition 0.000 claims description 3
- DHCDFWKWKRSZHF-UHFFFAOYSA-N sulfurothioic S-acid Chemical compound OS(O)(=O)=S DHCDFWKWKRSZHF-UHFFFAOYSA-N 0.000 claims description 3
- 239000004094 surface-active agent Substances 0.000 claims description 3
- ISIJQEHRDSCQIU-UHFFFAOYSA-N tert-butyl 2,7-diazaspiro[4.5]decane-7-carboxylate Chemical compound C1N(C(=O)OC(C)(C)C)CCCC11CNCC1 ISIJQEHRDSCQIU-UHFFFAOYSA-N 0.000 claims description 3
- PZNPLUBHRSSFHT-RRHRGVEJSA-N 1-hexadecanoyl-2-octadecanoyl-sn-glycero-3-phosphocholine Chemical compound CCCCCCCCCCCCCCCCCC(=O)O[C@@H](COP([O-])(=O)OCC[N+](C)(C)C)COC(=O)CCCCCCCCCCCCCCC PZNPLUBHRSSFHT-RRHRGVEJSA-N 0.000 claims 1
- 239000008347 soybean phospholipid Substances 0.000 claims 1
- 125000003396 thiol group Chemical class [H]S* 0.000 claims 1
- 238000003912 environmental pollution Methods 0.000 abstract description 2
- 238000004140 cleaning Methods 0.000 description 12
- 229910001868 water Inorganic materials 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 10
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
- 238000002161 passivation Methods 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 230000004580 weight loss Effects 0.000 description 3
- JLPULHDHAOZNQI-ZTIMHPMXSA-N 1-hexadecanoyl-2-(9Z,12Z-octadecadienoyl)-sn-glycero-3-phosphocholine Chemical compound CCCCCCCCCCCCCCCC(=O)OC[C@H](COP([O-])(=O)OCC[N+](C)(C)C)OC(=O)CCCCCCC\C=C/C\C=C/CCCCC JLPULHDHAOZNQI-ZTIMHPMXSA-N 0.000 description 2
- LSDPWZHWYPCBBB-UHFFFAOYSA-N Methanethiol Chemical compound SC LSDPWZHWYPCBBB-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 229940051841 polyoxyethylene ether Drugs 0.000 description 2
- 229920000056 polyoxyethylene ether Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 2
- 229940083466 soybean lecithin Drugs 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910020451 K2SiO3 Inorganic materials 0.000 description 1
- 239000004115 Sodium Silicate Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000009920 chelation Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000002500 ions Chemical group 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 102220043690 rs1049562 Human genes 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 229910052911 sodium silicate Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000002351 wastewater Substances 0.000 description 1
Images
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention discloses an alkali polishing additive for a high-flatness silicon wafer and a polishing method, which comprises a reaction catalyst with the mass percentage of 2-4%, a corrosion and scale inhibitor with the mass percentage of 1-2%, a complexing agent with the mass percentage of 0.1-0.5%, a wetting agent with the mass percentage of 0.01-0.03%, a defoaming agent with the mass percentage of 0.5-1% and an additive prepared by deionized water, wherein the additive is added into an alkali liquor and evenly mixed to prepare a polishing solution, the prepared polishing solution is used for polishing the back surface of the silicon wafer to replace an acid polishing process, so that the environmental pollution is reduced, and the problem of poor flatness in the alkali polishing process is solved.
Description
Technical Field
The invention relates to the technical field of solar cell silicon wafers, in particular to an alkali polishing additive and a polishing method for a high-flatness silicon wafer.
Background
In the production process of the monocrystalline silicon solar cell, in order to improve the conversion efficiency of the cell, the back of the monocrystalline silicon wafer is etched usually, so that the back surface of the silicon wafer is smoother, and the back passivation effect is improved. There are 2 conventional etching methods. One method is acid polishing, the back and the side of the silicon wafer are corroded by HNO3/HF, the reflectivity of the etched back can reach 30% -40%, the flatness of the etched back is not enough, the reflectivity is relatively low, and meanwhile, the discharge of nitrogen-containing wastewater is increased, so that adverse effects are caused to the environment. Another way is alkali polishing, the principle of the reaction of silicon and KOH: si + KOH + H20= = K2SiO3+ H2; the reflectivity of the back surface after etching reaches (40% -50%), the passivation effect can be greatly improved, the conversion efficiency of the solar cell is improved, HNO3 and HF can be replaced, and the environmental protection pressure is reduced. The flatness of the back surface of the monocrystalline silicon wafer is improved, on one hand, reflection of transmitted light can be enhanced, light transmittance is reduced, and on the other hand, the aluminum paste can be in contact with the surface of the silicon wafer to fully improve passivation effect. The current Isc and the open-circuit voltage Voc are respectively increased by the back surface polishing, so that the conversion efficiency of the solar cell can be improved. However, the flatness of the single crystal silicon back polishing additive in the current alkali polishing market after etching is general, and no high-flatness alkali polishing additive is on the market.
Disclosure of Invention
In order to solve the defects in the prior art, the invention provides the alkali polishing additive and the polishing method for the high-flatness silicon wafer, which replace an acid polishing process, reduce the environmental pollution and solve the problem of poor flatness in the alkali polishing process.
In order to realize the technical effects, the invention adopts the following scheme:
an alkali polishing additive for a high-flatness silicon wafer comprises a reaction catalyst, a corrosion and scale inhibitor, a complexing agent, a wetting agent defoaming agent and deionized water, and comprises the following components in percentage by weight:
the preferable technical scheme is characterized in that the reaction catalyst comprises one or more of astringent acid, peroxyacetic acid and ammonium persulfate.
According to a preferable technical scheme, the corrosion and scale inhibitor comprises one or more of methylbenzotriazole, phosphorous acid and phosphono carboxylic acid copolymer.
In a preferred technical scheme, the complexing agent comprises one or more of polyacrylamide, sodium aminotriacetate, pectin, heptonate and thiosulfate.
In a preferred technical scheme, the wetting agent comprises one or more of soybean lecithin, mercaptan, silanol surfactant and polyoxyethylene alkylphenol ether.
In a preferred technical scheme, the defoaming agent comprises one or more of polyvinylpyrrolidone, glucose and starch.
A method of polishing with a base polishing additive comprising the steps of:
s1, preparing an additive: adding 2-4% of reaction catalyst, 1-2% of corrosion and scale inhibitor, 0.1-0.5% of complexing agent, 0.01-0.03% of wetting agent and 0.5-1% of defoaming agent into deionized water, and mixing uniformly to prepare an additive;
s2, preparing a polishing solution: adding the additive prepared in the step S1 into an alkali liquor, and uniformly mixing to prepare a polishing solution; the mass ratio of the additive to the alkali liquor is 10-15; the alkali liquor is NaOH solution or KOH solution, and the mass concentration of the alkali liquor is 45 percent;
and S3, polishing the back of the silicon wafer by using the polishing solution prepared in the step S2, wherein the temperature of the polishing treatment is controlled to be 60-65 ℃, and the time is controlled to be 130-240S.
Compared with the prior art, beneficial effect does:
the additive can improve the flatness of the back surface of the silicon wafer in the alkali polishing process and can protect the PN junction on the front surface of the silicon wafer from being damaged.
Drawings
FIG. 1 is weight loss and reflectance data of the alkaline polishing process of example 1, comparative example 1, example 2 and comparative example 2 of the present invention.
FIG. 2 is an SEM photograph of a polished surface of a silicon wafer obtained in example 1 of the present invention;
FIG. 3 is an SEM photograph of a polished surface of a silicon wafer obtained in comparative example 1 of the present invention;
fig. 4 shows performance data of finished cells obtained in example 2 and comparative example 2.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments.
An alkali polishing additive for a high-flatness silicon wafer comprises a reaction catalyst, a corrosion and scale inhibitor, a complexing agent, a wetting agent defoaming agent and deionized water, and comprises the following components in percentage by weight:
the reaction catalyst has stronger electron obtaining capacity, can accelerate the process of generating sodium silicate by silicon electron losing, and increases the reaction speed of alkali and silicon; the corrosion and scale inhibitor contains more hydrophilic chain segments, can be adsorbed on the surface of phosphorosilicate glass, reduces the corrosion rate of alkali and the front side of a silicon wafer, prevents PN junctions on the front side from being damaged in the alkali polishing process, and simultaneously obtains a better polishing effect on the back side of a battery; the complexing agent has strong chelation effect on metal ions, and can greatly reduce the metal ion residues on the surface of the silicon wafer; the defoaming agent can be adsorbed on the surface of the monocrystalline silicon piece, so that the interfacial tension is reduced, and the desorption of hydrogen in the reaction process is accelerated.
The preferable technical scheme is characterized in that the reaction catalyst comprises one or more of astringent acid, peroxyacetic acid and ammonium persulfate.
According to a preferable technical scheme, the corrosion and scale inhibitor comprises one or more of methylbenzotriazole, phosphorous acid and phosphono carboxylic acid copolymer.
According to the preferable technical scheme, the complexing agent comprises one or more of polyacrylamide, sodium aminotriacetate, pectin, heptonate and thiosulfate.
According to a preferred technical scheme, the wetting agent comprises one or more of soybean lecithin, mercaptan, silanol surfactants and polyoxyethylene alkylphenol ether.
In a preferred technical scheme, the defoaming agent comprises one or more of polyvinylpyrrolidone, glucose and starch.
A method of polishing with a base polishing additive comprising the steps of:
s1, preparing an additive: adding 2-4% of reaction catalyst, 1-2% of corrosion and scale inhibitor, 0.1-0.5% of complexing agent, 0.01-0.03% of wetting agent and 0.5-1% of defoaming agent into deionized water, and mixing uniformly to prepare an additive;
s2, preparing a polishing solution: adding the additive prepared in the step S1 into alkali liquor, and uniformly mixing to prepare polishing solution; the mass ratio of the additive to the alkali liquor is 10-15; the alkali liquor is NaOH solution or KOH solution, and the mass concentration of the alkali liquor is 45 percent;
and S3, polishing the back of the silicon wafer by using the polishing solution prepared in the step S2, wherein the temperature of the polishing treatment is controlled to be 60-65 ℃, and the time is controlled to be 130-240S.
Example 1
Taking 60L of alkali to throw a groove, adding 50L of water, raising the temperature to 65 ℃, adding 750g of NaOH, and adding 200g of the additive (the formula is 2wt% of peroxyacetic acid, 1wt% of methylbenzotriazole, 0.1wt% of pectin, 0.01 wt% of octylphenol polyoxyethylene ether, 0.5% of polyvinylpyrrolidone and the balance of deionized water) after the temperature is stable; after stirring uniformly, taking the silicon wafer with PSG removed, carrying out precleaning for 40s in a 30 ℃ NaOH and hydrogen peroxide tank, after precleaning is completed, putting the silicon wafer into a water tank for cleaning for 2min, then putting the silicon wafer into an alkali polishing tank for polishing for 230s, after polishing is completed, putting the silicon wafer into the water tank for cleaning for 2min, and completing the alkali polishing etching process.
Comparative example 1
Taking 60L of alkali, throwing the tank, adding 50L of water, raising the temperature to 65 ℃, adding 750g of NaOH, and adding 200g of currently marketed additives after the temperature is stable; after stirring uniformly, taking the silicon wafer with PSG removed, carrying out precleaning for 40s in a 30 ℃ NaOH and hydrogen peroxide tank, after precleaning is completed, putting the silicon wafer into a water tank for cleaning for 2min, then putting the silicon wafer into an alkali polishing tank for polishing for 230s, after polishing is completed, putting the silicon wafer into the water tank for cleaning for 2min, and completing the alkali polishing etching process.
The weight loss and reflectance data of the alkali polishing process of example 1 and comparative example 1 are shown in table 1. The height difference of the back tower footing after polishing in example 1 is shown in fig. 2, and the height difference of the back tower footing after polishing in comparative example 1 is shown in fig. 3, and it can be seen from the figure that: the flatness of the silicon wafer polished by the additive is obviously better than that of the silicon wafer polished by the alkali polishing additive sold in the market.
Example 2
Taking 350L of alkali to throw a groove, adding 335L of water, raising the temperature to 65 ℃, adding 15L of NaOH with the mass fraction of 48%, and adding 2L of the additive (the formula is 2wt% of peroxyacetic acid, 1wt% of methylbenzotriazole, 0.1wt% of pectin, 0.01% of octylphenol polyoxyethylene ether, 0.5% of polyvinylpyrrolidone and the balance of deionized water) after the temperature is stable; circulating for 10min, after the solution in the tank body is uniformly mixed, taking 1600 silicon wafers without PSG, pre-cleaning for 40s in a 30 ℃ NaOH and hydrogen peroxide tank, after the pre-cleaning is finished, putting the silicon wafers into a water tank for cleaning for 2min, then putting the silicon wafers into an alkali polishing tank for polishing for 230s, after the polishing is finished, putting the silicon wafers into the water tank for cleaning for 2min, and finishing the alkali polishing etching process; and then, performing a subsequent solar cell preparation process to obtain a finished cell.
Comparative example 2
Adding 335L of water into a 350L alkali polishing tank, raising the temperature to 65 ℃, adding 15L of NaOH with the mass fraction of 48%, and adding 2L of an alkali polishing additive sold in the market after the temperature is stable; circulating for 10min, after the solution in the tank body is uniformly mixed, taking 1600 silicon wafers without PSG, pre-cleaning for 40s in a 30 ℃ NaOH and hydrogen peroxide tank, after the pre-cleaning is finished, putting the silicon wafers into a water tank for cleaning for 2min, then putting the silicon wafers into an alkali polishing tank for polishing for 230s, after the polishing is finished, putting the silicon wafers into the water tank for cleaning for 2min, and finishing the alkali polishing etching process; and then, carrying out a subsequent solar cell preparation process to obtain a finished product cell.
The weight loss and reflectance data of the alkali polishing process of example 2 and comparative example 2 are shown in table 1. The performance data of the finished cells obtained in example 2 and comparative example 2 are shown in table 2, and it can be seen from table 2 that: the average efficiency of the cell of the additive is 23.25 percent, and the average efficiency of the cell of the commercially available additive is 23.22 percent; in contrast, the average cell efficiency of the additive of the present invention was increased by 0.03%.
In the description of the present invention, it is to be understood that the terms "upper", "lower", "top", "bottom", "inner", "outer", and the like, refer to orientations or positional relationships that are based on the orientations or positional relationships shown in the drawings, or the orientations or positional relationships that the products of the present invention are conventionally placed in use, or the orientations or positional relationships that are conventionally understood by those skilled in the art, and are used for convenience in describing and simplifying the description, but do not indicate or imply that the referenced devices or elements must have a particular orientation, be constructed in a particular orientation, and be operated, and thus, should not be construed as limiting the present invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Claims (7)
1. The alkali polishing additive for the high-flatness silicon wafer is characterized by comprising a reaction catalyst, a corrosion and scale inhibitor, a complexing agent, a wetting agent defoaming agent and deionized water, and comprises the following components in percentage by weight:
2. the alkali polishing additive for high flatness silicon wafers as claimed in claim 1 wherein the reaction catalyst includes one or more of astringent acid, peroxyacetic acid, ammonium persulfate.
3. The alkaline polishing additive for silicon wafers with high flatness of claim 1, wherein the corrosion and scale inhibitor comprises one or more of methylbenzotriazole, phosphorous acid, phosphono carboxylic acid copolymer.
4. The alkali polishing additive for high-flatness silicon wafers as claimed in claim 1, wherein the complexing agent includes one or more of polyacrylamide, sodium aminotriacetate, pectin, heptonate, and thiosulfate.
5. The alkaline polishing additive for high flatness silicon wafers as set forth in claim 1 wherein said wetting agent comprises one or more of soy lecithin, thiol, silanol-type surfactant, polyoxyethylene alkylphenol ether.
6. The alkali polishing additive for high flatness silicon wafers as claimed in claim 1 wherein the defoaming agent includes one or more of polyvinylpyrrolidone, glucose, starch.
7. A method of polishing with the alkaline polishing additive of claim 1 comprising the steps of:
s1, preparing an additive: adding 2-4% of reaction catalyst, 1-2% of corrosion and scale inhibitor, 0.1-0.5% of complexing agent, 0.01-0.03% of wetting agent and 0.5-1% of defoaming agent into deionized water, and mixing uniformly to prepare an additive;
s2, preparing a polishing solution: adding the additive prepared in the step S1 into alkali liquor, and uniformly mixing to prepare polishing solution; the mass ratio of the additive to the alkali liquor is 10-15; the alkali liquor is NaOH solution or KOH solution, and the mass concentration of the alkali liquor is 45 percent;
and S3, polishing the back of the silicon wafer by using the polishing solution prepared in the step S2, wherein the temperature of the polishing treatment is controlled to be 60-65 ℃, and the time is controlled to be 130-240S.
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| CN102479698A (en) * | 2010-11-24 | 2012-05-30 | 气体产品与化学公司 | Compositions and methods for texturing of silicon wafers |
| TWI589655B (en) * | 2016-03-04 | 2017-07-01 | 常州時創能源科技有限公司 | An additive for crystalline silicon alkaline polishing liquid and use thereof |
| CN110205035A (en) * | 2019-05-08 | 2019-09-06 | 上海至绒新能源科技有限公司 | A kind of additive and its application, application method |
| CN111584343A (en) * | 2020-05-15 | 2020-08-25 | 常州启航能源科技有限公司 | Preparation method of monocrystalline silicon wafer capable of simultaneously realizing polishing and texturing |
| CN112111279A (en) * | 2020-08-13 | 2020-12-22 | 天津爱旭太阳能科技有限公司 | Additive for alkali polishing in solar cell preparation and polishing process |
| CN113136144A (en) * | 2021-03-18 | 2021-07-20 | 武汉风帆电化科技股份有限公司 | Polishing agent for rapid alkali polishing of crystal silicon wafer and application method thereof |
| CN114350265A (en) * | 2021-11-30 | 2022-04-15 | 嘉兴市小辰光伏科技有限公司 | Monocrystalline silicon alkali polishing additive and use method thereof |
| CN114316804A (en) * | 2021-12-15 | 2022-04-12 | 嘉兴市小辰光伏科技有限公司 | Additive for improving monocrystalline silicon alkali polishing appearance problem and polishing process thereof |
| CN115172528A (en) * | 2022-07-28 | 2022-10-11 | 安徽晶科能源有限公司 | Solar cell, preparation process thereof and photovoltaic module |
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